LME49870MAX/NOPB

LME49870 www.ti.com SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013 LME49870 44V Single High Performance, High Fidelity Audio Operational Amplifier Check for Samples: LME49870 FEATURES DESCRIPTION • • • • The LME49870 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49870 audio operational amplifier delivers superior audio signal amplification for outstanding audio performance. The LME49870 combines extremely low voltage noise density (2.7nV/√Hz) with vanishingly low THD+N (0.00003%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49870 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. 1 2 Easily Drives 600Ω Loads Optimized for Superior Audio Signal Fidelity Output Short Circuit Protection PSRR and CMRR Exceed 120dB (Typ) APPLICATIONS • • • • • • High Quality Audio Amplification High Fidelity Preamplifiers, Phono Preamps, and Multimedia High Performance Professional Audio High Fidelity Equalization and Crossover Networks with Active Filters High Performance Line Drivers and Receivers Low Noise Industrial Applications Including Test, Measurement, and Ultrasound KEY SPECIFICATIONS • • • • • • • • • Power Supply Voltage Range: ±2.5V to ±22V THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ: 0.00003% (Typ) – RL = 600Ω: 0.00003% (Typ) Input Noise Density: 2.7nV/√Hz (Typ) Slew Rate: ±20V/μs (Typ) Gain Bandwidth Product: 55MHz (Typ) Open Loop Gain (RL = 600Ω): 140dB (Typ) Input Bias Current: 10nA (Typ) Input Offset Voltage: 0.1mV (Typ) DC Gain Linearity Error: 0.000009% The LME49870's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellent operational amplifier DC performance. The LME49870 has a wide supply range of ±2.5V to ±22V. Over this supply range the LME49870 maintains excellent common-mode rejection, power supply rejection, and low input bias current. The LME49870 is unity gain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF. The LME49870 is available in 8–lead narrow body SOIC. Demonstration boards are available for each package. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2013, Texas Instruments Incorporated LME49870 SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013 www.ti.com TYPICAL APPLICATION 150: 3320: 150: 3320: 26.1 k: + 909: - - LME49870 + INPUT LME49870 22 nF//4.7 nF//500 pF 10 pF 47 k: + 3.83 k: + 100: OUTPUT 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure 1. Passively Equalized RIAA Phono Preamplifier CONNECTION DIAGRAM NC -IN +IN V- NC - V+ + VOUT NC Figure 2. Package Number — D0008A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LME49870 LME49870 www.ti.com SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 46V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Rating (5) ESD Rating (6) 2000V Pins 1, 4, 7 and 8 200V Pins 2, 3, 5 and 6 100V Junction Temperature Thermal Resistance (1) (2) (3) (4) (5) (6) 150°C θJA (SO) 145°C/W “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower. Human body model, applicable std. JESD22-A114C. Machine model, applicable std. JESD22-A115-A. OPERATING RATINGS Temperature Range (TMIN ≤ TA ≤ TMAX) −40°C ≤ TA ≤ 85°C ±2.5V ≤ VS ≤ ±22V Supply Voltage Range Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LME49870 3 LME49870 SNAS413C – SEPTEMBER 2007 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR THE LME49870 (1) The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol THD+N Parameter Total Harmonic Distortion + Noise Conditions LME49870 Typical (2) Limit (3) AV = 1, VOUT = 3Vrms RL = 2kΩ RL = 600Ω 0.00003 0.00003 0.00009 AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00005 Units (Limits) % (max) IMD Intermodulation Distortion GBWP Gain Bandwidth Product 55 45 MHz (min) SR Slew Rate ±20 ±15 V/μs (min) FPBW Full Power Bandwidth VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz 10 MHz ts Settling time AV = –1, 10V step, CL = 100pF 0.1% error range 1.2 μs Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 Equivalent Input Noise Density f = 1kHz f = 10Hz 2.5 6.4 4.7 in Current Noise Density f = 1kHz f = 10Hz 1.6 3.1 VOS Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature –40°C ≤ TA ≤ 85°C PSRR Average Input Offset Voltage Shift vs Power Supply Voltage VS = ±18V, ΔVS = 24V VS = ±22V, ΔVS = 30V IB Input Bias Current ΔIOS/ΔTemp IOS en VIN-CM CMRR ZIN (1) (2) (3) (4) 4 VS = ±18V ±0.12 VS = ±22V ±0.14 % mV (max) ±0.7 110 VCM = 0V 10 72 Input Bias Current Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.2 Input Offset Current VCM = 0V 11 VS = ±18V +17.1 –16.9 VS = ±22V +21.0 –20.8 Common-Mode Rejection VS = ±18V, –12V≤Vcm≤12V 120 VS = ±22V, –15V≤Vcm≤15V 120 Differential Input Impedance Common Mode Input Impedance –10V