LME49723MABD

LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 LME49723 Dual High Fidelity Audio Operational Amplifier Check for Samples: LME49723 FEATURES DESCRIPTION • • • • • The LME49723 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49723 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49723 combines extremely low voltage noise density (3.6nV/√Hz) with vanishingly low THD+N (0.0002%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49723 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads. 1 2 Easily Drives 600Ω Loads Optimized for Superior Audio Signal Fidelity Output Short Circuit Protection PSRR and CMRR Exceed 100dB (typ) SOIC Package APPLICATIONS • • • • • • • • • High Quality Audio Amplification High Fidelity Preamplifiers High Fidelity Multimedia Phono Pre Amps High Performance Professional Audio High Fidelity Equalization and Crossover Networks High Performance Line Drivers High Performance Line Receivers High Fidelity Active Filters KEY SPECIFICATIONS • • • • • • • • Power Supply Voltage Range: ±2.5 to ±17 V THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) – RL = 2kΩ: 0.0002 % (typ) – RL = 600Ω: 0.0002 % (typ) Input Noise Density: 3.6 nV/√Hz (typ) Slew Rate: ±8 V/μs (typ) Gain Bandwidth Product: 17 MHz (typ) Open Loop Gain (RL = 600Ω): 105 dB (typ) Input Bias Current: 200 nA (typ) Input Offset Voltage: 0.3 mV (typ) The LME49723's outstanding CMRR (100dB), PSRR (100dB), and VOS (0.3mV) give the amplifier excellent operational amplifier DC performance. The LME49723 has a wide supply range of ±2.5V to ±17V. Over this supply range the LME49723’s input circuitry maintains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49723 is unity gain stable. The LME49723 is available in an 8–lead narrow body SOIC package. Demonstration boards are available for each package. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2013, Texas Instruments Incorporated LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL APPLICATION 150: 3320: 150: 26.1 k: + 909: - INPUT 3320: - LME49723 LME49723 + + 3.83 k: + 100: 22 nF//4.7 nF//500 pF 10 pF 47 k: OUTPUT 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure 1. Passively Equalized RIAA Phono Preamplifier CONNECTION DIAGRAM Dual-In-Line Package 1 8 OUTPUT A + V 2 7 INVERTING INPUT A OUTPUT B A NON-INVERTING INPUT A 3 - 4 B + + 6 INVERTING INPUT B 5 V NON-INVERTING INPUT B Figure 2. SOIC Package See Package Number D0008A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LME49723 LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Susceptibility (5) 800V ESD Susceptibility (6) 180V Junction Temperature 150°C Thermal Resistance θJA (SO) 145°C/W Temperature Range TMIN ≤ TA ≤ TMAX –40°C ≤ TA ≤ 85°C Supply Voltage Range ±2.5V ≤ VS ≤ ± 17V (1) (2) (3) (4) (5) (6) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Amplifier output connected to GND, any number of amplifiers within a package. Human body model, 100pF discharged through a 1.5kΩ resistor. Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω). ELECTRICAL CHARACTERISTICS FOR THE LME49723 (1) (2) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol Parameter THD+N Total Harmonic Distortion + Noise IMD Intermodulation Distortion GBWP Gain Bandwidth Product SR Slew Rate FPBW en Full Power Bandwidth Conditions AV = 1, VOUT = 3Vrms LME49723 Typical (3) RL = 2kΩ 0.0002 RL = 600Ω 0.0002 AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz Units (Limits) % (max) % 19 15 MHz (min) ±8 ±6 V/μs (min) 4 MHz Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.45 0.65 μVRMS (max) f = 1kHz Equivalent Input Noise Density f = 10Hz 3.2 8.5 5 nV/√Hz (max) f = 1kHz f = 10Hz 0.7 1.3 Current Noise Density VOS Offset Voltage ΔVOS/ΔTe mp Average Input Offset Voltage Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.2 PSRR Average Input Offset Voltage Shift vs Power Supply Voltage ΔVS = 20V (5) 100 ISOCH-CH Channel-to-Channel Isolation fIN = 1kHz fIN = 20kHz 118 112 IB Input Bias Current VCM = 0V 200 (3) (4) (5) 0.0004 0.0005 in (1) (2) Limit (4) ±0.3 pA/√Hz 1 mV (max) μV/°C 95 dB (min) dB 300 nA (max) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Typical specifications are specified at +25ºC and represent the most likely parametric norm. Tested limits are specified to AOQL (Average Outgoing Quality Level). PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔVOS/ΔVS) |. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LME49723 3 LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR THE LME49723(1)(2) (continued) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified. Symbol Parameter Conditions ΔIOS/ΔTe mp Input Bias Current Drift vs Temperature –40°C ≤ TA ≤ 85°C IOS Input Offset Current VCM = 0V VIN-CM Common-Mode Input Voltage Range CMRR Common-Mode Rejection –10V