LME49722
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SNAS454 – MARCH 2008
LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier
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FEATURES
DESCRIPTION
•
•
•
•
The LME49722 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49722 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49722
combines extremely low voltage noise density
(1.9nV/√Hz) rate with vanishingly low THD+N
(0.00002%) to easily satisfy the most demanding
audio applications. To ensure that the most
challenging loads are driven without compromise, the
LME49722 has a high slew rate of ±22V/µs and an
output current capability of ±28mA. Further, dynamic
range is maximized by an output stage that drives
2kΩ loads to within 1V of either power supply voltage.
1
2
Easily Drives 600Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (typ)
APPLICATIONS
•
•
•
•
•
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Ultra High Quality Audio Amplification
High Fidelity Preamplifiers, Phono Preamps,
and Multimedia
High Performance Professional Audio
High Fidelity Equalization and Crossover
Networks with Active Filters
High Performance Line Drivers and Receivers
Low Noise Industrial Applications Including
Test, Measurement, and Ultrasound
The LME49722 has a wide supply range of ±2.5V to
±18V. Over this supply range the LME49722
maintains excellent common-mode and power supply
rejection, and low input bias current. This Audio
Operational Amplifier achieves outstanding AC
performance while driving complex loads with values
as high as 100pF with gain value greater than 2.
Directly interchangeable with LME49720, LM4562
and LME49860 for similar operating voltages.
Table 1. KEY SPECIFICATIONS
Wide Operating Voltage Range
VALUE
UNIT
±2.5V to
±18
V
Equivalent Noise
(Frequency = 1kHz)
1.9
nV/√Hz
(typ)
Equivalent Noise
(Frequency = 10Hz)
2.8
nV/√Hz
(typ)
PSRR
120
dB (typ)
Slew Rate
±22
V/μs (typ)
RL = 2kΩ
0.00002
% (typ)
RL = 600Ω
0.00002
% (typ)
Open Loop Gain (RL = 600Ω)
135
dB (typ)
Input Bias Current
50
nA (typ)
Voltage Offset
±0.02
mV (typ)
THD+N
(AV = 1, VOUT = 3VRMS, fIN = 1kHz)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
LME49722
SNAS454 – MARCH 2008
www.ti.com
Typical Application
C2
R2
VP-P
R1
LME49722
+
C1
fMAX = > 300 kHz for VP-P = 20V, R2 C2 | R1 C1
Figure 1. Wide Bandwidth Low Noise Low Drift Amplifier
Connection Diagram
1
8
OUTPUT A
+
V
2
7
INVERTING INPUT A
OUTPUT B
A
NON-INVERTING
INPUT A
3
-
4
B
+
+
6
INVERTING INPUT B
5
V
NON-INVERTING
INPUT B
Figure 2. 8-Lead SOIC
See D Package
2
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2) (3)
Supply Voltage (VS = VCC-VEE)
38V
−65°C to 150°C
Storage Temperature
Input Voltage
Output Short Circuit
(V-) - 0.7V to (V+) + 0.7V
(4)
Continuous
ESD Susceptibility (5)
2000V
ESD Susceptibility (6)
200V
Junction Temperature (TJMAX)
Thermal Resistance
(1)
(2)
(3)
(4)
(5)
(6)
150°C
θJA
154°C/W
θJC
27°C/W
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given inAbsolute Maximum Ratings,
whichever is lower. For the LME49722, TJMAX = 150°C and the typical θJC is 27°C/W.
Human body model, applicable std. JESD22-A114C.
Machine model, applicable std. JESD22-A115-A.
Operating Ratings
Temperature Range
TMIN ≤ TA ≤ TMAX
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±18V
Supply Voltage Range
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(1) (2)
Electrical Characteristics for the LME49722
The following specifications apply for VS = ±15V and ±18V, RL = 2kΩ, fIN = 1kHz unless otherwise specified. Limits apply for
TA = 25°C,
Symbol
THD+N
Parameter
Total Harmonic Distortion + Noise
Conditions
LME49722
Typical
(3)
AV = 1, VOUT = 3Vrms
RL = 2kΩ
RL = 600Ω
0.00002
0.00002
0.00002
(4)
Units
(Limits)
0.00009
%
% (max)
Limit
IMD
Intermodulation Distortion
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
GBWP
Gain Bandwidth Product
fIN = 100kHz
55
45
MHz (min)
SR
Slew Rate
AV = 1, VOUT = 10VP-P
±22
±15
V/μs (min)
FPBW
Full Power Bandwidth
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
12
MHz
ts
Settling time
AV = –1, 10V step, CL = 100pF
0.1% error range
1.2
μs
eINV
Equivalent Input Voltage Noise
fBW = 20Hz to 20kHz
0.25
0.35
μVRMS (max)
f= 1kHz
VS = ±15V
VS = ±18V
1.9
1.9
2.5
nV√Hz
nV√Hz (max)
f = 10Hz
VS = ±15V
VS = ±18V
2.8
3.2
nV√Hz
nV√Hz
2.6
6
pA/√Hz
pA/√Hz
eN
Equivalent Input Voltage Density
In
Current Noise Density
f = 1kHz
f = 10Hz
VOS
Offset Voltage
VCM = 0V
(5)
±0.02
±0.7
mV (max)
120
110
dB (min)
Power Supply Rejection Ratio
ΔVS = 20V
ISOCH-CH
Channel-to-Channel Isolation
fIN = 1kHz
fIN = 20kHz
136
135
IB
Input Bias Current
VCM = 0V
VS = ±15V
VS = ±18V
50
53
PSRR
%
dB
dB
200
nA
nA (max)
ΔIOS/ΔTe
mp
Input Bias Current Drift vs
Temperature
–40°C ≤ TA ≤ 85°C
0.1
IOS
Input Offset Current
VCM = 0V
VS = ±15V
VS = ±18V
25
32
100
nA
nA (max)
VS = ±15V
+14.0
–13.9
(VCC) – 2.0
(VEE) + 2.0
V (min)
V (min)
VS = ±18V
+17.0
–16.9
(VCC) – 2.0
(VEE) + 2.0
V (min)
V (min)
128
110
dB (min)
VIN-CM
Common-Mode Input Voltage Range
CMRR
Common-Mode Rejection
ZIN
Differential Input Impedance
ZCM
Common Mode Input Impedance
AVOL
Open Loop Voltage Gain
(1)
(2)
(3)
(4)
(5)
4
–10V ≤ VCM ≤ 10V
nA/°C
30
kΩ
–10V ≤ VCM ≤ 10V
1000
MΩ
–12V ≤ VOUT ≤ 12V, RL = 600Ω
–12V ≤ VOUT ≤ 12V, RL = 2kΩ
–12V ≤ VOUT ≤ 12V, RL = 10kΩ
135
140
140
120
dB
dB
dB
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
Typical values represent most likely parametric norms at TA = +25°C, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
Datasheet min/max specification limits are specified by test or statistical analysis.
PSRR is measured as follow: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔVOS/ΔVS) |.
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Electrical Characteristics for the LME49722 (1)(2) (continued)
The following specifications apply for VS = ±15V and ±18V, RL = 2kΩ, fIN = 1kHz unless otherwise specified. Limits apply for
TA = 25°C,
Symbol
VOM
IOUT
Parameter
Output Voltage Swing
Output Current
Conditions
LME49722
Typical
(3)
VS = ±15V
RL = 600Ω
RL = 2kΩ
RL = 10kΩ
+13.7/–14
±14.0
±14.1
VS = ±18V
RL = 600Ω
RL = 2kΩ
RL = 10kΩ
+16.6/–16.8
±17.0
±17.1
RL = 600Ω
VS = ±15V
VS = ±18V
±23
±27.6/–28
Limit
(4)
Units
(Limits)
VPEAK
VPEAK
VPEAK
±15.5
±23
VPEAK (min)
VPEAK
VPEAK
mA
mA (min)
+43
–40
mA
mA
fIN = 10kHz
Closed-Loop
Open-Loop
0.01
13
Ω
Ω
IOUT = 0mA
VS = ±15V
VS = ±18V
12.1
12.3
IOUT-CC
Short Circuit Current
Sink to Source
ZOUT
Output Impedance
IS
Total Quiescent Power Supply
Current
16
mA
mA (max)
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Typical Performance Characteristics
THD+N
vs
Output Voltage
+VCC = –VEE = 15V, fIN = 1kHz, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
THD+N (%)
THD+N (%)
THD+N
vs
Output Voltage
+VCC = –VEE = 15V, fIN = 1kHz, RL = 2kΩ
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
100m
1
10 20
0.00001
10m
100m
Figure 4.
THD+N
vs
Output Voltage
+VCC = –VEE = 18V, fIN = 1kHz, RL = 2kΩ
THD+N
vs
Output Voltage
+VCC = –VEE = 18V, fIN = 1kHz, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.0005
0.0002
0.001
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
10m
0.00001
10m
100m
1
10 20
VRMS
100m
1
10 20
VRMS
Figure 5.
Figure 6.
THD+N
vs
Frequency
+VCC = –VEE = 15V, VO = 3VRMS, RL = 2kΩ
THD+N
vs
Frequency
+VCC = –VEE = 15V, VO = 3VRMS, RL = 600Ω
0.001
0.001
0.0005
0.0005
0.0002
0.0002
THD+N (%)
THD+N (%)
10 20
Figure 3.
THD+N (%)
THD+N (%)
VRMS
0.0001
0.00005
0.00002
0.00001
20
0.0001
0.00005
0.00002
50 100 200 500 1k 2k
5k 10k 20k
0.00001
20
FREQUENCY (Hz)
50 100 200 500 1k 2k
5k 10k 20k
FREQUENCY (Hz)
Figure 7.
6
1
VRMS
Figure 8.
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Typical Performance Characteristics (continued)
THD+N
vs
Frequency
+VCC = –VEE = 18V, VO = 3VRMS, RL = 2kΩ
THD+N
vs
Frequency
+VCC = –VEE = 18V, VO = 3VRMS, RL = 600Ω
0.001
0.0005
0.0005
0.0002
0.0002
THD+N (%)
THD+N (%)
0.001
0.0001
0.00005
0.00002
0.0001
0.00005
0.00002
0.00001
20
50 100 200 500 1k 2k
0.00001
20
5k 10k 20k
FREQUENCY (Hz)
Figure 9.
Figure 10.
IMD
vs
Frequency
+VCC = –VEE = 15V, RL = 2kΩ
IMD
vs
Frequency
+VCC = –VEE = 15V, RL = 600Ω
0.01
0.005
0.005
0.002
0.002
0.001
IMD (%)
IMD (%)
0.001
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
0.00001
100m
500m
1
5 10
20
500m
1
5
10
VRMS
VRMS
Figure 11.
Figure 12.
IMD
vs
Frequency
+VCC = –VEE = 18V, RL = 2kΩ
IMD
vs
Frequency
+VCC = –VEE = 18V, RL = 600Ω
0.01
0.005
0.005
0.002
0.002
IMD (%)
0.0005
0.0002
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
20
0.001
0.001
IMD (%)
5k 10k 20k
FREQUENCY (Hz)
0.01
0.01
50 100 200 500 1k 2k
500m
1
5 10
20
0.00001
100m
500m
1
VRMS
VRMS
Figure 13.
Figure 14.
5
10
20
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Typical Performance Characteristics (continued)
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
IMD (%)
IMD (%)
IMD
vs
Frequency
+VCC = –VEE = 2.5V, RL = 2kΩ
0.0005
0.0002
IMD
vs
Frequency
+VCC = –VEE = 2.5V, RL = 600Ω
0.0005
0.0002
0.0001
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
100m
500m
1
0.00001
100m
2
500m
Figure 15.
Figure 16.
Voltage Noise Density
vs
Frequency
+VCC = –VEE = 15V
Voltage Noise Density
vs
Frequency
+VCC = –VEE = 18V
100
100
VS = 36V
VCM = 18V
VOLTAGE NOISE (nV/—Hz)
VOLTAGE NOISE (nV/—Hz)
VS = 30V
VCM = 15V
10
1.80 nV/—Hz
10
1.84 nV/—Hz
1
1
10
100
1k
10k
100k
1
10
100
1k
10k
Figure 17.
Figure 18.
Current Noise Density
vs
Frequency
+VCC = –VEE = 15V
Current Noise Density
vs
Frequency
+VCC = –VEE = 18V
100
VS = 36V
VCM = 18V
CURRENT NOISE (pA/—Hz)
CURRENT NOISE (pA/—Hz)
VS = 30V
VCM = 15V
10
2.4 pA/—Hz
10
1
2.4 pA/—Hz
1
1
10
100
1k
FREQUENCY (Hz)
10k
100k
Figure 19.
8
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
100
2
VRMS
VRMS
1
1
1
10
100
1k
FREQUENCY (Hz)
10k
100k
Figure 20.
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Typical Performance Characteristics (continued)
PSRR+
vs
Frequency
+VCC = –VEE = 15V, VRIPPLE = 200mVPP, RL = 2kΩ
-40
-50
-50
-60
-60
-70
-70
PSRR (dB)
PSRR (dB)
-40
PSRRvs
Frequency
+VCC = –VEE = 15V, VRIPPLE = 200mVPP, RL = 2kΩ
-80
-90
-100
-80
-90
-100
-110
-110
-120
-120
-130
-130
-140
20
100
-140
20
10k 20k
1k
100
FREQUENCY (Hz)
Figure 22.
Crosstalk
vs
Frequency
+VCC = –VEE = 15V, RL = 2kΩ, VOUT = 3VRMS
CMRR
vs
Frequency
+VCC = –VEE = 15V, RL = 2kΩ
0
0
-50
-50
-100
-150
20
100
14
1k
10k
100k
-100
-150
20
Figure 24.
Output Voltage
vs
Supply Voltage
THD+N = 1%, RL = 2kΩ
Output Voltage
vs
Supply Voltage
THD+N = 1%, RL = 600Ω
12
OUTPUT VOLTAGE (VRMS)
6
4
2
2
10k
Figure 23.
8
0
1k
FREQUENCY (Hz)
10
0
100
FREQUENCY (Hz)
12
OUTPUT VOLTAGE (VRMS)
10k 20k
1k
Figure 21.
CMRR (dB)
CROSSTALK (dB)
FREQUENCY (Hz)
4
6
8
10 12 14 16 18 20
SUPPLY VOLTAGE (V)
100k
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
SUPPLY VOLTAGE (V)
Figure 25.
Figure 26.
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Typical Performance Characteristics (continued)
Supply Current
vs
Supply Voltage
RL = 2kΩ
13.0
Full Power Bandwidth
vs
Frequency
+VCC = –VEE = 15V, RL = 2kΩ
0
0 dB = 1VPP
-10
MAGNITUDE (dB)
SUPPLY CURRENT (mA)
12.5
12.0
11.5
11.0
-20
-30
-40
10.5
10.0
-50
0
2
4
6
8
10 12 14 16 18 20
1
10
100
1k
10k 100k 1M
10M 100M
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
Figure 27.
Figure 28.
Gain Phase
vs
Frequency
+VCC = –VEE = 15V
180
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
-20
10
PHASE LAG (q)
160
160
GAIN (dB)
180
100
1k
10k
100k
1M
-20
10M 100M
FREQUENCY (Hz)
Figure 29.
10
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APPLICATION INFORMATION
APPLICATION HINTS
The LME49722 is a high speed operational amplifier which can operate stably in most of the applications. For the
application with gain greater than 2, capacitive loads up to 100pF will cause little change in the phase
characteristics of the amplifiers and are therefore allowable. Capacitive loads greater than 10pF must be isolated
from the output, if the gain value is less than 2. The most straightforward way to do this is to put a resistor (its
value ≥ 20Ω ) in series with the output. The resistor will also prevent unnecessary power dissipation if the output
is accidentally shorted.
R1
470:
R3
150 k:
-
LOW IMPEDANCE
MICROPHONE
½ LME49722
+
C1
4.7 PF
R2
470:
R6
10 k:
R4
150 k:
2
x
2
R7
100:
2
2
OUTPUT
2
2
Total voltage noise density: eN_total | eN + eN_R1 + eN_R2 = 1.9 + 2 (2.7 ),
then eN_total = 4.3 nV/—Hz. For eN_R1 = eN_R2 | 2.7 nV/—Hz, if R1 = R2 | 470:
x
Or total voltage noise = 0.13 PV input referred in a 1 kHz noise bandwidth.
Figure 30. Low Impedance Microphone Pre-amplifier
0.05 PF
10 PF
11 k:
11 k:
100 k:
½ LME49722
+
INPUT
0.005 PF
11 k:
10 k:
3.6 k:
100 k:
3.6 k:
0.022 PF
1.8 k:
1.8 k:
500 k:
0.005 PF
½ LME49722
OUTPUT
+
Figure 31. Three-Band Active Tone Control
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REVISION HISTORY
12
Rev
Date
1.0
03/27/08
Description
Initial release.
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
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supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
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