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LMH6619QMAKE/NOPB

LMH6619QMAKE/NOPB

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC-8

  • 描述:

    IC OPAMP VFB 2 CIRCUIT 8SOIC

  • 数据手册
  • 价格&库存
LMH6619QMAKE/NOPB 数据手册
LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 LMH6619Q 130 MHz, 1.25 mA RRIO Operational Amplifier Check for Samples: LMH6619Q • 23 • • • • • • • • • • • VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1, unless otherwise specified. Operating voltage range 2.7V to 11V Supply current per channel 1.25 mA Small signal bandwidth 130 MHz Input offset voltage (limit at 25°C) ±0.75 mV Slew rate 55 V/µs Settling time to 0.1% 90 ns Settling time to 0.01% 120 ns SFDR (f = 100 kHz, AV = +1, VOUT = 2 VPP) 100 dBc 0.1 dB bandwidth (AV = +2) 15 MHz Low voltage noise 10 nV/√Hz Rail-to-Rail input and output • • AEC-Q100 grade 2 qualified −40°C to +105°C Manufactured on an automotive grade flow APPLICATIONS • • • • • • • • ADC driver DAC buffer Active filters High speed sensor amplifier Current sense amplifier Portable video STB, TV video amplifier Automotive DESCRIPTION The LMH6619Q (dual) is a 130 MHz rail-to-rail input and output amplifier designed for ease of use in a wide range of applications requiring high speed, low supply current, low noise, and the ability to drive complex ADC and video loads. The operating voltage range extends from 2.7V to 11V and the supply current is typically 1.25 mA per channel at 5V. The LMH6619Q is a member of the PowerWise® family and have an exceptional powerto-performance ratio. The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs. The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground terminated 150Ω load the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩ load will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for external compensation. The LMH6619Q is offered in the 8-Pin SOIC package. 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerWise, WEBENCH are registered trademarks of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. Copyright © 2012, Texas Instruments Incorporated PRODUCT PREVIEW FEATURES 1 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Typical Application Figure 1. Single to Differential ADC Driver + V V 560: 10 PF + 0.1 PF 10 PF - 33: + V LMH6619 + INPUT 220 pF 0.1 PF 560: 560: 10 PF 560: + V 560: - ADC121S625 33: LMH6619 + 220 pF 560: PRODUCT PREVIEW These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings ESD Tolerance (1) (2) Human Body Model For input pins only 2000V For all other pins 2000V Machine Model 200V Supply Voltage (VS = V+ – V−) Junction Temperature 12V (3) 150°C max Storage Temperature Range –65°C to 150°C Soldering Information: See product folder at www.ti.com and www.ti.com/ lit/an/snoa549c /snoa549c.pdf. (1) (2) (3) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. Operating Ratings (1) Supply Voltage (VS = V+ – V−) Ambient Temperature Range 2.7V to 11V (2) −40°C to +105°C Package Thermal Resistance (θJA) 8-Pin SOIC (1) (2) 2 160°C/W Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 +3V Electrical Characteristics Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1) Symbol Parameter Condition Min (2) Typ (3) Max (2) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 120 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 56 GBW Gain Bandwidth AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 55 LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 13 AV = 2, RL = 150Ω, VOUT = 2 VPP 13 MHz 63 MHz MHz Peak Peaking AV = 1, CL = 5 pF 1.5 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP , RF = RG = 825Ω 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 61 fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ 47 10 nV/ pA/ 36 36 ns 46 V/μs PRODUCT PREVIEW Time Domain Response ns Noise and Distortion Performance SFDR Spurious Free Dynamic Range en Input Voltage Noise Density f = 100 kHz in Input Current Noise Density f = 100 kHz 1 CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 VCM = 0.5V (pnp active) VCM = 2.5V (npn active) 0.1 dBc dB Input, DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (4) VCM = 0.5V (pnp active) −1.4 −2.6 VCM = 2.5V (npn active) +1.0 +1.8 ±0.27 Input Offset Current 0.01 CIN Input Capacitance 1.5 RIN Input Resistance CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 1.4V 78 96 VCM Stepped from 2.0V to 3.1V 81 107 RL = 1 kΩ to +2.7V or +0.3V 85 98 RL = 150Ω to +2.6V or +0.4V 76 82 Open Loop Voltage Gain mV μV/°C 0.8 IOS AOL ±0.75 ±1.3 μA pF 8 −0.2 μA MΩ 3.2 V dB dB Output DC Characteristics (1) (2) (3) (4) Boldface limits apply to temperature range of −40°C to 105°C Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 3 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com +3V Electrical Characteristics (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1) Symbol VOUT Parameter Typ Max Output Voltage Swing High (Voltage from RL = 1 kΩ to V+/2 V+ Supply Rail) 50 56 62 RL =150Ω to V+/2 160 172 198 RL = 1 kΩ to V+/2 62 68 76 RL =150Ω to V+/2 175 189 222 RL = 150Ω to V− 34 44 48 Output Voltage Swing Low (Voltage from V− Supply Rail) Condition IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (5) Min (2) ±25 (3) (2) Units mV from either rail ±35 mA 0.17 Ω Power Supply Performance PRODUCT PREVIEW PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS = 2.7V to 11V IS Supply Current (per channel) RL = ∞ (5) 4 84 104 1.2 dB 1.5 1.75 Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 +5V Electrical Characteristics Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min (1) Typ (2) Max (1) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 130 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 53 GBW Gain Bandwidth AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 15 AV = 2, RL = 150Ω, VOUT = 2 VPP 15 MHz 57 MHz MHz Peak Peaking AV = 1, CL = 5 pF 0.5 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP, RF = RG = 1 kΩ 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 88 fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ 61 10 nV/ pA/ 44 30 ns 55 V/μs PRODUCT PREVIEW Time Domain Response ns Distortion and Noise Performance SFDR Spurious Free Dynamic Range en Input Voltage Noise Density f = 100 kHz in Input Current Noise Density f = 100 kHz 1 CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 VCM = 0.5V (pnp active) VCM = 4.5V (npn active) 0.1 dBc dB Input, DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (3) 0.8 −1.5 −2.4 VCM = 4.5V (npn active) +1.0 +1.9 ±0.26 Input Offset Current 0.01 CIN Input Capacitance 1.5 RIN Input Resistance CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −0.1V to 3.4V 81 98 VCM Stepped from 4.0V to 5.1V 84 108 RL = 1 kΩ to +4.6V or +0.4V 84 100 RL = 150Ω to +4.5V or +0.5V 78 83 Open Loop Voltage Gain mV µV/°C VCM = 0.5V (pnp active) IOS AOL ±0.75 ±1.3 μA pF 8 −0.2 μA MΩ 5.2 V dB dB Output DC Characteristics (1) (2) (3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 5 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com +5V Electrical Characteristics (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol VOUT Parameter Output Voltage Swing High Voltage from V+ Supply Rail) Output Voltage Swing Low Voltage from V− Supply Rail) Condition Typ Max RL = 1 kΩ to V+/2 60 73 82 RL = 150Ω to V+/2 230 255 295 RL = 1 kΩ to V+/2 77 85 98 RL = 150Ω to V+/2 255 275 326 RL = 150Ω to V− 37 48 50 IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (4) Min (1) ±25 (2) (1) Units mV from either rail ±35 mA 0.17 Ω Power Supply Performance PRODUCT PREVIEW PSRR Power Supply Rejection Ratio DC, VCM = 0.5V, VS = 2.7V to 11V IS Supply Current (per channel) RL = ∞ (4) 6 84 104 1.3 dB 1.5 1.75 Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 ±5V Electrical Characteristics Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol Parameter Condition Min (1) Typ (2) Max (1) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP 140 AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP 53 GBW Gain Bandwidth AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ, VOUT = 0.2 VPP 54 LSBW −3 dB Bandwidth Large Signal AV = 1, RL = 1 kΩ, VOUT = 2 VPP 16 AV = 2, RL = 150Ω, VOUT = 2 VPP 15 MHz 58 MHz MHz Peak Peaking AV = 1, CL = 5 pF 0.05 dB 0.1 dBBW 0.1 dB Bandwidth AV = 2, VOUT = 0.5 VPP, RF = RG = 1.21 kΩ 15 MHz DG Differential Gain AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 % DP Differential Phase AV = +2, 4.43 MHz, 0.6V < VOUT < 2V, RL = 150Ω to V+/2 0.1 deg tr/tf Rise & Fall Time 2V Step, AV = 1 SR Slew Rate 2V Step, AV = 1 ts_0.1 0.1% Settling Time 2V Step, AV = −1 90 ts_0.01 0.01% Settling Time 2V Step, AV = −1 120 fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ 100 fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ 88 fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ 70 10 nV/ pA/ 45 30 ns 57 V/μs PRODUCT PREVIEW Time Domain Response ns Noise and Distortion Performance SFDR Spurious Free Dynamic Range en Input Voltage Noise Density f = 100 kHz in Input Current Noise Density f = 100 kHz 1 CT Crosstalk f = 5 MHz, VIN = 2 VPP 80 VCM = −4.5V (pnp active) VCM = 4.5V (npn active) 0.1 dBc dB Input DC Performance VOS Input Offset Voltage TCVOS Input Offset Voltage Temperature Drift IB Input Bias Current (3) 0.9 −1.5 −2.4 VCM = 4.5V (npn active) +1.0 +1.9 ±0.26 Input Offset Current 0.01 CIN Input Capacitance 1.5 RIN Input Resistance CMVR Common Mode Voltage Range DC, CMRR ≥ 65 dB CMRR Common Mode Rejection Ratio VCM Stepped from −5.1V to 3.4V 84 100 VCM Stepped from 4.0V to 5.1V 83 108 RL = 1 kΩ to +4.6V or −4.6V 86 95 RL = 150Ω to +4.3V or −4.3V 79 84 Open Loop Voltage Gain mV µV/°C VCM = −4.5V (pnp active) IOS AOL ±0.75 ±1.3 μA pF 8 −5.2 μA MΩ 5.2 V dB dB Output DC Characteristics (1) (2) (3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Voltage average drift is determined by dividing the change in VOS by temperature change. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 7 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com ±5V Electrical Characteristics (continued) Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. Symbol VOUT Parameter Condition Min Typ Max 100 111 126 RL = 150Ω to GND 430 457 526 RL = 1 kΩ to GND 115 126 141 RL = 150Ω to GND 450 484 569 RL = 150Ω to V− 45 61 62 (1) Output Voltage Swing High (Voltage from RL = 1 kΩ to GND V+ Supply Rail) Output Voltage Swing Low (Voltage from V− Supply Rail) IOUT Linear Output Current VOUT = V+/2 ROUT Output Resistance f = 1 MHz (4) ±25 (2) (1) Units mV from either rail ±35 mA 0.17 Ω Power Supply Performance PRODUCT PREVIEW PSRR Power Supply Rejection Ratio DC, VCM = −4.5V, VS = 2.7V to 11V IS Supply Current (per channel) RL = ∞ (4) 84 104 1.45 dB 1.65 2.0 Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part. Connection Diagram 8-Pin SOIC OUT A 1 8 + V A -IN A +IN A 2 - + 7 3 6 B + V - 4 OUT B -IN B 5 +IN B Figure 2. Top View 8 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Typical Performance Characteristics At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Closed Loop Frequency Response for Various Supplies Closed Loop Frequency Response for Various Supplies 3 3 + V = +1.5V 0 -3 ±5V ±1.5V + V = +5V GAIN (dB) ±2.5V -9 -12 - V = -5V -3 A = +1 -6 VOUT = 0.2V -18 RL = 1 k: CL = 5 pF -21 1 AV = +1 RL = 150:||3 pF 10 100 VOUT = 0.2V -9 1000 1 10 FREQUENCY (MHz) Closed Loop Frequency Response for Various Supplies 3 + + V = +1.5V V = +1.5V - V = -1.5V + V = +5V -3 + V = +2.5V - V = -5V - V = -2.5V -6 -9 -12 AV = +2 -15 RL = 1 k: VOUT = 0.2V -18 1 10 - 0 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 0 1000 FREQUENCY (MHz) Closed Loop Frequency Response for Various Supplies 3 100 V = -1.5V + V = +5V - -3 V = -5V + -6 V = +2.5V V = -2.5V -9 AV = +2 -12 RF = RG = 2 k: -15 RL = 150: VOUT = 0.4V -18 100 1 1000 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) Closed Loop Frequency Response for Various Temperatures Closed Loop Frequency Response for Various Temperatures 3 3 -40°C 0 -40°C 0 -3 -3 25°C -6 GAIN (dB) GAIN (dB) 25°C 85°C -9 PRODUCT PREVIEW GAIN (dB) - V = -2.5V 0 -6 -15 + V = +2.5V - V = -1.5V AV = +1 125°C + -12 V = +2.5V V = -2.5V -15 VOUT = 0.2 VPP -18 RL = 1 k: CL = 10 pF -21 1 10 100 1000 FREQUENCY (MHz) -6 85°C -9 AV = +1 + -12 V = +2.5V V = -2.5V -15 VOUT = 0.2 VPP -18 RL = 150: CL = 10 pF -21 1 10 125°C 100 1000 FREQUENCY (MHz) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 9 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Closed Loop Gain vs. Frequency for Various Gains Large Signal Frequency Response 3 3 0 0 A=1 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) + V = +5V -3 A=2 A=5 -6 A = 10 -9 + -12 V = +2.5V V = -2.5V -15 RL = 1 k: - V = -5V + -3 V = +2.5V + V = -1.5V -9 AV = +2 -12 RF = RG = 2 k: VOUT = 2V 100 -18 1000 1 10 FREQUENCY (MHz) PRODUCT PREVIEW ±1.5V ±2.5V GAIN (dB) NORMALIZED GAIN (dB) 0.2 0 ±5V -0.1 -0.2 1 10 100 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 CL = 30 pF CL = 20 pF CL = 10 pF CL = 5 pF CL = 0 pF + V = +5V - V = -5V RL = 1 k: VOUT = 0.2V 1 10 1000 HD2 vs. Frequency and Supply Voltage Small Signal Frequency Response with Capacitive Load and Various RISO -20 11 + V = +5V 9 -30 - V = -5V 7 -40 DISTORTION (dBc) VOUT = 0.2 VPP 5 C = 100 pF L GAIN (dB) 100 FREQUENCY (MHz) FREQUENCY (MHz) RISO = 0 3 1 -1 RISO = 25 -3 RISO = 50 RISO = 100 -5 10 + V = +1.5V RL = 1 k: - V = -1.5V RF = 0: A = +1 -60 + V = +2.5V - V = -2.5V -70 -80 + V = +5V - -100 -9 1 -50 VOUT = 2 VPP -90 RISO = 75 -7 100 1000 -110 0.1 V = -5V 1 10 FREQUENCY (MHz) FREQUENCY (MHz) 10 1000 Small Signal Frequency Response with Various Capacitive Load 0.3 0.1 100 FREQUENCY (MHz) ±0.1 dB Gain Flatness for Various Supplies 0.10 V = -2.5V - -6 -15 RL = 1 k: -18 CL = 5 pF VOUT = 0.2V -21 1 10 -0.3 0.01 - V = +1.5V Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD3 vs. Frequency and Supply Voltage V = +1.5V - RL = 1 k: V = -1.5V DISTORTION (dBc) -50 -60 + V = +2.5V -70 - V = -2.5V -80 HD3, RL = 150: - RF = 0: A = +1 -40 DISTORTION (dBc) -20 VOUT = 2 VPP -30 V+ = +2.5V + VOUT = 2 VPP -40 V = -2.5V RF = 0: -50 A = +1 HD2, RL = 150: -60 -70 -80 -90 -90 HD2, RL = 1 k: + V = +5V -100 -100 - HD3, RL = 1 k: V = -5V -110 0.1 1 -110 0.1 10 1 FREQUENCY (MHz) FREQUENCY (MHz) HD2 and HD3 vs. Common Mode Voltage HD2 DISTORTION (dBc) -50 fIN = 1 MHz + V = +2.5V V = -2.5V -60 HD2 and HD3 vs. Common Mode Voltage -60 -80 -90 -100 -110 0 1 2 V = +2.5V 3 4 5 -80 -90 -100 - V = -2.5V 6 7 8 9 -120 10 2 V = +2.5V - V = -2.5V - 3 4 5 6 7 8 9 INPUT COMMON MODE VOLTAGE (V) HD2 vs. Frequency and Gain HD3 vs. Frequency and Gain VOUT = 2 VPP -40 V+ = +2.5V - - V = -2.5V -50 G = +10, HD2 DISTORTION (dBc) RL = 1 k: 10 -30 VOUT = 2 VPP -40 V+ = +2.5V DISTORTION (dBc) 1 + + V = +5V V = -5V V = -5V 0 HD3 HD2 INPUT COMMON MODE VOLTAGE (V) -30 -50 HD3 + V = +5V -110 - V = -5V V = -5V RF = 0 A = +1 + - - -120 RL = 1 k: -70 HD3 HD3 + V = +5V VOUT = 1 VPP - V = -2.5V RF = 0 A = +1 HD2 + V = +5V + V = +2.5V RL = 1 k: -70 fIN = 100 kHz HD2 VOUT = 1 VPP DISTORTION (dBc) -50 10 PRODUCT PREVIEW -20 -30 HD2 and HD3 vs. Frequency and Load -60 RF = 2 k: -70 -80 G = +1, HD2 -90 V = -2.5V RL = 1 k: -60 RF = 2 k: G = +2, HD3 -70 G = +10, HD3 -80 -90 G = +1, HD3 -100 -100 G = +2, HD2 -110 0.1 1 10 -110 0.1 1 10 FREQUENCY (MHz) FREQUENCY (MHz) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 11 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD2 vs. Output Swing Open Loop Gain/Phase PHASE PHASE (°) GAIN (dB) 60 GAIN 40 40 20 + 20 HD2 (dBc) 80 80 V = +2.5V - 0 RL = 1 k: CL = 5 pF -20 1k 10k 100k 5 MHz -60 -70 1 MHz 500 kHz 1M 10M 100M -20 -90 -40 1G -100 100 kHz 0 1 2 FREQUENCY (Hz) PRODUCT PREVIEW + -30 10 MHz -40 5 MHz + V = +2.5V HD2 (dBc) -50 -60 -70 -80 5 -20 - V = -2.5V -40 AV = -1 -50 RL = 1 k: HD3 (dBc) 4 HD2 vs. Output Swing 10 MHz V = +2.5V -30 3 VOUT (VPP) HD3 vs. Output Swing -20 10 MHz -80 0 V = -2.5V + V = +2.5V -40 V- = -2.5V AV = -1 -50 RL = 1 k: 100 100 60 -30 120 120 - AV = +2 RL = 1 k: -70 1 MHz -80 1 MHz -90 V = -2.5V 5 MHz -60 500 kHz -90 500 kHz -100 -100 100 kHz 100 kHz -110 -110 0 1 2 3 4 5 0 1 VOUT (VPP) 2 3 4 5 VOUT (VPP) HD2 vs. Output Swing HD3 vs. Output Swing -20 -20 10 MHz -30 -30 10 MHz -40 -40 - -50 V = -2.5V HD3 (dBc) HD2 (dBc) + V = +2.5V 5 MHz -50 AV = +2 -60 1 MHz RL = 150: -70 500 kHz -80 -70 AV = +2 RL = 1 k: 1 MHz -90 100 kHz 500 kHz -100 100 kHz -110 -110 0 1 2 - V = -2.5V -80 -90 -100 3 4 5 VOUT (VPP) 12 + V = +2.5V 5 MHz -60 0 1 2 3 4 5 VOUT (VPP) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. HD3 vs. Output Swing THD vs. Output Swing -30 -20 -30 + V = +2.5V 5 MHz -50 -50 - 5 MHz V = -2.5V THD (dBc) AV = +2 -60 RL = 150: -70 1 MHz + V = +2.5V - -60 V = -2.5V AV = -1 -70 RL = 1 k: 1 MHz -80 500 kHz -80 500 kHz -90 -90 -100 100 kHz 100 kHz -100 -110 0 1 2 3 4 0 5 1 2 3 4 5 OUTPUT SWING (VPP) VOUT (VPP) Settling Time vs. Input Step Amplitude (Output Slew and Settle Time) Input Noise vs. Frequency 1000 140 PRODUCT PREVIEW HD3 (dBc) 10 MHz -40 10 MHz -40 1000 + - VOLTAGE NOISE (nV/ Hz) SETTLING TIME (ns) 120 100 FALLING, 0.1% 80 60 RISING, 0.1% 40 AV = -1 V = -2.5V 100 100 VOLTAGE NOISE 10 10 CURRENT NOISE (pA/ Hz) V = +2.5V + 20 V = +2.5V - V = -2.5V 0 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 CURRENT NOISE 100 1k 10k 100k 1M 1 10M FREQUENCY (Hz) OUTPUT SWING (VPP) VOS vs. VOUT VOS vs. VOUT 6.0 6.0 + + V = +2.5V V = +2.5V - V = -2.5V 4.0 - V = -2.5V 4.0 RL = 150: RL = 1 k: -40°C 2.0 25°C VOS (mV) VOS (mV) 2.0 0 -2.0 125°C -40°C 25°C 0 -2.0 125°C -4.0 -4.0 -6.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 -6.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 VOUT (V) VOUT (V) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 13 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. VOS vs. VCM VOS vs. VS (pnp) 0.3 0.3 -40°C -40°C 0.2 0.2 0.1 VOS (mV) VOS (mV) 0.1 25°C 0 -0.1 -0.2 125°C -0.3 0 25°C - -0.1 V = -0.5V + VS = V - V -0.2 VCM = 0V -0.4 + V = +2.5V -0.5 -0.3 - 125°C V = -2.5V -0.6 -0.5 -0.4 0.5 1.5 2.5 3.5 4.5 5.5 2 3 4 5 6 7 8 9 10 11 12 VS (V) VCM (V) VOS vs. VS (npn) VOS vs. IOUT 0.3 0.6 PRODUCT PREVIEW + V = +2.5V -40°C 0.2 - 0.4 0.1 -40°C V = -2.5V 0.2 VOS (mV) VOS (mV) 25°C 0 125°C -0.1 -0.2 125°C - VS = V - V -0.3 25°C -0.2 -0.4 + V = +0.5V + 0 -0.6 VCM = 0V -0.4 2 3 4 5 6 7 8 9 -0.8 -40 -30 -20 -10 10 11 12 0 10 VS (V) IOUT (mA) VOS Distribution (pnp and npn) IB vs. VS (pnp) 9 20 40 -1.0 - 8 V = -0.5V + - VS = V - V 7 VCM = 0V 6 25°C IBIAS (PA) RELATIVE FREQUENCY (%) 30 5 4 -1.5 -40°C 3 125°C 2 1 -0. 7 -0. 0 60 -0. 5 -0. 0 40 -0. 30 -0. 20 -0. 10 0 0 .1 0 0.2 0 0.3 0 0.4 0 0.5 0 0.6 0 0.7 0 0 -2.0 0 2 4 6 8 10 12 VS (V) VOS (mV) 14 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. IB vs. VS (npn) IS vs. VS 1.8 1.5 + V = +0.5V VS = V+ - V 1.6 VCM = 0V 1.4 125°C 25°C 1.2 125°C IS (mA) IBIAS (PA) - 25°C 1.0 -40°C 1.0 0.8 - 0.6 V = -0.5V 0.4 VS = V - V -40°C + - VCM = 0.5V 2 4 8 6 10 0.2 0 12 2 4 VS (V) VOUT vs. VS 150 600 + BELOW V SUPPLY RL = 1 k: to 200 MID-RAIL VOUT (mV) VOUT (mV) BELOW V SUPPLY 400 50 0 25°C 125°C 50 RL = 150: to MID-RAIL 0 -40°C 400 VOLTAGE VOUT IS 125°C VOLTAGE VOUT IS - - ABOVE V SUPPLY 2 4 6 8 10 600 12 ABOVE V SUPPLY 2 4 6 8 10 12 VS (V) VS (V) VOUT vs. VS Closed Loop Output Impedance vs. Frequency AV = +1 1000 20 V = +2.5V ABOVE V SUPPLY V = -2.5V - OUTPUT IMPEDANCE (:) - V = 0V 25 RL = 150: to GND -40°C + VOLTAGE VOUT IS - VOUT (mV) 25°C 200 100 150 12 VOLTAGE VOUT IS + -40°C 10 VOUT vs. VS VOLTAGE VOUT IS 100 8 6 VS (V) PRODUCT PREVIEW 0.5 0 30 25°C 35 100 10 1 0.1 125°C 40 0 2 4 6 8 10 12 + 0.01 0.001 0.01 0.1 1 10 100 FREQUENCY (MHz) V (V) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 15 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. PSRR vs. Frequency PSRR vs. Frequency 120 120 100 100 -PSRR -PSRR 80 PSRR (dB) PSRR (dB) 80 +PSRR 60 40 20 +PSRR 60 40 20 + V = +2.5V V = -2.5V 0 10 100 1k + V = +1.5V - - V = -1.5V 10k 100k 1M 0 10 10M 100M 100 1k 10k 100k 1M FREQUENCY (Hz) CMRR vs. Frequency Crosstalk Rejection vs. Frequency (Output to Output) 100 110 PRODUCT PREVIEW + + V = +2.5V - V = -2.5V CROSSTALK REJECTION (dB) V = +2.5V 100 V = -2.5V 90 CMRR (dB) 80 70 60 50 40 30 0.0001 0.001 0.01 0.1 1 10 100 - AVCHB = 2V/V 80 70 60 100k 1M 100M 50 mV/DIV Small Signal Step Response + V = +2.5V + V = +1.5V - - V = -1.5V A = +1 V = -2.5V A = +1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 25 ns/DIV Small Signal Step Response 50 mV/DIV Small Signal Step Response 50 mV/DIV 10M FREQUENCY (Hz) Small Signal Step Response 50 mV/DIV VOUTCHA = 2 VPP 90 FREQUENCY (MHz) + V = +5V - + V = +2.5V - V = -5V A = +1 V = -2.5V A = -1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 16 10M 100M FREQUENCY (Hz) 25 ns/DIV Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Typical Performance Characteristics (continued) At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified. Small Signal Step Response 50 mV/DIV + V = +1.5V + V = +5V - - V = -5V A = -1 V = -1.5V A = -1 VOUT = 0.2V VOUT = 0.2V RL = 1 k: RL = 1 k: 25 ns/DIV 25 ns/DIV Small Signal Step Response 50 mV/DIV 50 mV/DIV Small Signal Step Response + V = +2.5V + V = +1.5V - - V = -2.5V A = +2 V = -1.5V A = +2 VOUT = 0.2V VOUT = 0.2V RL = 150: RL = 150: 25 ns/DIV 25 ns/DIV Large Signal Step Response 500 mV/DIV 50 mV/DIV Small Signal Step Response + V = +5V + V = +2.5V - - V = -5V A = +2 V = -2.5V A = +1 VOUT = 0.2V VOUT = 2V RL = 150: RL = 1 k: 25 ns/DIV 50 ns/DIV Large Signal Step Response Overload Recovery Waveform 6 + VOUT V = +5V 4 - V = -5V A = +5 2 2V/DIV 500 mV/DIV PRODUCT PREVIEW 50 mV/DIV Small Signal Step Response + V = +2.5V - 0 V = -2.5V A = +2 -2 VOUT = 2V -4 VIN RL = 150: -6 50 ns/DIV 100 ns/DIV Application Information The LMH6619Q is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process. This device family architecture features the following: • Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low supply voltage (2.7V) and Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 17 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 • • • www.ti.com low bias current. Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either supply rail. Consistent performance from any supply voltage (2.7V - 11V) with little variation with supply voltage for the most important specifications (e.g. BW, SR, IOUT.) Significant power saving compared to competitive devices on the market with similar performance. With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the LMH6619Q is well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW (at AV = +1) is typically 120 MHz. The LMH6619Q is designed to avoid output phase reversal. With input over-drive, the output is kept near the supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 3 shows the input and output voltage when the input voltage significantly exceeds the supply voltages. 4 V VIN + 3 2 1 V/DIV 1 0 VOUT PRODUCT PREVIEW -1 -2 -3 - V -4 2 Ps/DIV Figure 3. Input and Output Shown with CMVR Exceeded SINGLE TO DIFFERENTIAL ADC DRIVER Figure 4 shows the LMH6619Q used to drive a differential ADC with a single-ended input. The ADC121S625 is a fully differential 12-bit ADC. Table 1 shows the performance data of the LMH6619Q and the ADC121S625. + V V 560: 10 PF + 0.1 PF 10 PF - 33: + V LMH6619 + INPUT 220 pF 0.1 PF 560: 560: 10 PF 560: + V 560: - ADC121S625 33: LMH6619 + 220 pF 560: Figure 4. LMH6619Q Driving an ADC121S625 Table 1. Performance Data for the Single to Differential ADC Driver 18 Parameter Measured Value Signal Frequency 10 kHz Signal Amplitude 2.5V Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Table 1. Performance Data for the Single to Differential ADC Driver (continued) Parameter Measured Value SINAD 67.9 dB SNR 68.29 dB THD −78.6 dB SFDR 75.0 dB ENOB 11.0 bits DIFFERENTIAL ADC DRIVER Its low noise and wide bandwidth make the LMH6619Q an excellent choice for driving a 12-bit ADC. Figure 5 shows the LMH6619Q driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC.The LMH6619Q is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is at 500 kHz and the −0.01 dB point is at 100 kHz. The 22Ω resistor and 390 pF capacitor form an antialiasing filter for the ADC121S705. The capacitor also stores and delivers charge to the switched capacitor input of the ADC. The capacitive load on the LMH6619Q created by the 390 pF capacitor is decreased by the 22Ω resistor. Table 2 shows the performance data. 1 PF 549: 549: PRODUCT PREVIEW +IN 150 pF 1.24 k: + V V 1 nF + 0.1 PF 10 PF + V 14.3 k: - 22: LMH6619 0.1 PF + 5.6 PF 10 PF 390 pF 0.1 PF 14.3 k: ADC121S705 1 PF 549: 549: 22: -IN 390 pF 150 pF 1.24 k: + V V 1 nF + 0.1 PF 14.3 k: 10 PF LMH6619 + 5.6 PF 0.1 PF 14.3 k: Figure 5. LMH6619Q Driving an ADC121S705 Table 2. Performance Data for the Differential ADC Driver Parameter Measured Value Signal Frequency 100 kHz SINAD 71.5 dB SNR 71.87 dB THD −82.4 dB Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 19 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com Table 2. Performance Data for the Differential ADC Driver (continued) Parameter Measured Value SFDR 90.97 dB ENOB 11.6 bits DC LEVEL SHIFTING PRODUCT PREVIEW Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in Figure 6 can do both of these tasks. The procedure for specifying the resistor values is as follows. 1. Determine the input voltage. 2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2. 3. Determine the output voltage needed. 4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2. 5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN) 6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID. 7. Set the supply voltage to be used. 8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS. 9. Set RF. 10. Calculate R1, R1 = RF/gain. 11. Calculate R2, R2 = RF/(noise gain-gain). 12. Calculate RG, RG= RF/(noise gain – 1). Check that both the VIN and VOUT are within the voltage ranges of the LMH6619Q. The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V. 1. VIN = 0V to 1V 2. VINMID = 0V + (1V – 0V)/2 = 0.5V 3. VOUT = 2V to 4V 4. VOUTMID = 2V + (4V – 2V)/2 = 3V 5. Gain = (4V – 2V)/(1V – 0V) = 2 6. ΔVOUT = 3V – 2 x 0.5V = 2 7. For the example the supply voltage will be +5V. 8. Noise gain = 2 + 2/5V = 2.4 9. RF = 2 kΩ 10. R1 = 2 kΩ/2 = 1 kΩ 11. R2 = 2 kΩ/(2.4-2) = 5 kΩ 12. RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ V + + V R2 R1 VIN + LMH6619Q VOUT - RG RF Figure 6. DC Level Shifting 20 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER Figure 7 shows the LMH6619Q used as the amplifier in a multiple feedback low pass filter. This filter is set up to have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter Designer found at amplifiers.national.com. 1.05 k: 1.02 k: 150 pF 62 pF + V + V 0.1 PF 1.05 k: 1 PF 523: 0.1 PF - INPUT 330 pF 1.02 k: LMH6619 - + LMH6619 820 pF 0.1 PF 1 PF 510: OUTPUT + 1 PF 0.1 PF 1 PF - V - Figure 7. 4th Order Multiple Feedback Low-Pass Filter CURRENT SENSE AMPLIFIER With it’s rail-to-rail input and output capability, low VOS, and low IB the LMH6619Q is an ideal choice for a current sense amplifier application. Figure 8 shows the schematic of the LMH6619Q set up in a low-side sense configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS x (1 + RF/RG) or 0.6 mV x 21 = 12.6 mV. Voltage error due to IO is IO x RF or 0.26 µA x 1 kΩ = 0.26 mV. Hence total voltage error is 12.6 mV + 0.26 mV or 12.86 mV which translates into a current error of 12.86 mV/(2 V/A) = 6.43 mA. +5V 0A to 1A 51: + 1 k: 0.1: LMH6619Q 51: 1 k: Figure 8. Current Sense Amplifier TRANSIMPEDANCE AMPLIFIER By definition, a photodiode produces either a current or voltage output from exposure to a light source. A Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA often will need to be compensated to insure proper operation. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 21 PRODUCT PREVIEW V LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com CF RF VS CIN CPD LMH6619Q + Figure 9. Photodiode Modeled with Capacitance Elements Figure 9 shows the LMH6619Q modeled with photodiode and the internal op amp capacitances. The LMH6619Q allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF). The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of the circuit. The noise gain of this circuit determines the stability and is defined by: NG = 1 + sRF (CT + CF) 1 + sCFRF PRODUCT PREVIEW Where, fZ # (1) 1 1 and fP = 2SRFCF 2SRFCT (2) OP AMP OPEN LOOP GAIN GAIN (dB) I-V GAIN (:) NOISE GAIN (NG) 1 + sRF (CT + CF) 1 + sRFCF 1+ CIN CF 0 dB FREQUENCY fz # 1 2SRFCT fP = 1 GBWP 2SRFCF Figure 10. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain Figure 10 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of gain, CT and RF create a zero in the transfer function. At higher frequencies the circuit can become unstable due to excess phase shift around the loop. A pole at fP in the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain slope is flattened by choosing an appropriate value of CF for optimum performance. Theoretical expressions for calculating the optimum value of CF and the expected −3 dB bandwidth are: CF = CT 2SRF(GBWP) (3) GBWP f-3 dB = 2SR C F T (4) Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor. Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance gain stage followed by a broadband voltage gain stage. 22 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q LMH6619Q www.ti.com SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 Table 3 shows the measurement results of the LMH6619Q with different photodiodes having various capacitances (CPD) and a feedback resistance (RF) of 1 kΩ. Table 3. TIA (Figure 1) Compensation and Performance Results CPD CT CF (pF) (pF) (pF) 22 24 7.7 47 49 100 222 CF f −3 dB CAL f −3 dB MEAS Peaking (pF) (MHz) (MHz) (dB) 5.6 23.7 20 0.9 10.9 10 16.6 15.2 0.8 102 15.8 15 11.5 10.8 0.9 224 23.4 18 7.81 8 2.9 CAL USED Figure 11 shows the frequency response for the various photodiodes in Table 3. 6 0 CPD = 22 pF, -3 CF = 10 pF -6 -9 -12 CF = 5.6 pF CPD = 47 pF, CPD = 100 pF, CF = 15 pF -15 CPD = 222 pF, CF = 18 pF -18 100k 1M 10M 100M 1G FREQUENCY (Hz) Figure 11. Frequency Response for Various Photodiode and Feedback Capacitors When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and pole (fZ and fP in Figure 10). The higher the values of RF and CT, the sooner the noise gain peaking starts and therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of excess dark current and noise. DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO The LMH6619Q can be used to drive an NTSC video signal on a twisted-pair cable. Figure 12 shows the schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal from a camera over a twisted pair to a monitor or display located a distance. C1 and C2 are used to AC couple the video signal into the LMH6619Q. The two amplifiers of the LMH6619Q are set to a gain of 2 to compensate for the 75Ω back termination resistors on the outputs. The LMH6619Q is set to a gain of 1. Because of the DC bias the output of the LMH6619Q is AC coupled. Most monitors and displays will accept AC coupled inputs. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q 23 PRODUCT PREVIEW NORMALIZED I-V GAIN (dB) 3 LMH6619Q SNOSC78A – JUNE 2012 – REVISED NOVEMBER 2012 www.ti.com +10V C5 0.1 PF +10V C2 47 PF + J1 VIDEO INPUT 8 3 R5 10 k: GND 2 + - 1 VOUT R16 3.01 k: R10 75: C7 47 PF + R9 3.01 k: + C1 47 PF R7 3.01 k: C3 20 PF R8 3 k: + GND R3 1.50 k: 6 5 PRODUCT PREVIEW R2 3.3 k: R12 150: - U1B 7 4 5 - + V LMH6619Q 3 + V 2 R14 3.01 k: + C9 10 PF GND U2 1 C10 47 PF + J2 VIDEO OUTPUT GND R15 3.01 k: GND R11 75: LMH6619Q VOUT + V 4 C4 0.1 PF GND R13 3.01 k: TWISTED-PAIR R1 75: GND C8 0.1 PF U1A +V LMH6619Q GND +10V GND GND R4 10 k: + C6 10 PF GND GND +10V R6 10 k: GND GND Figure 12. Differential Cable Driver 24 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LMH6619Q PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LMH6619QMAK/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM -40 to 105 LMH66 19QMA LMH6619QMAKE/NOPB ACTIVE SOIC D 8 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 105 LMH66 19QMA LMH6619QMAKX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 105 LMH66 19QMA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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LMH6619QMAKE/NOPB
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    • 1000+21.45000

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