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LMK00804B
SNAS642A – JUNE 2014 – REVISED JULY 2014
LMK00804B Low Skew, 1-to-4 Multiplexed
Differential/LVCMOS-to-LVCMOS/TTL Fanout Buffer
1 Features
•
1
•
•
•
•
•
3 Description
Four LVCMOS/LVTTL Outputs with 7 Ω Output
Impedance
– Additive Jitter: 0.04 ps RMS (typ) @ 125 MHz
– Noise Floor: –166 dBc/Hz (typ) @ 125 MHz
– Output Frequency: 350 MHz (max)
– Output Skew: 35 ps (max)
– Part-to-Part Skew: 700 ps (max)
Two Selectable Inputs
– CLK, nCLK Pair Accepts LVPECL, LVDS,
HCSL, SSTL, LVHSTL, or LVCMOS/LVTTL
– LVCMOS_CLK Accepts LVCMOS/LVTTL
Synchronous Clock Enable
Core/Output Power Supplies:
– 3.3 V/3.3 V
– 3.3 V/2.5 V
– 3.3 V/1.8 V
– 3.3 V/1.5 V
Package: 16-Lead TSSOP
Industrial Temperature Range: –40ºC to +85ºC
2 Applications
•
•
•
•
•
•
The LMK00804B is a low skew, high performance
clock fanout buffer which can distribute up to four
LVCMOS/LVTTL outputs (3.3-V, 2.5-V, 1.8-V, or 1.5V levels) from one of two selectable inputs, which can
accept differential or single-ended inputs. The clock
enable input is synchronized internally to eliminate
runt or glitch pulses on the outputs when the clock
enable terminal is asserted or de-asserted. The
outputs are held in logic low state when the clock is
disabled. A separate output enable terminal controls
whether the outputs are active state or highimpedance state. The low additive jitter and phase
noise floor, and guaranteed output and part-to-part
skew characteristics make the LMK00804B ideal for
applications demanding high performance and
repeatability.
See also Device Comparison Table for descriptions of
CDCLVC1310 and LMK00725 parts.
Device Information
PART NUMBER
PACKAGE
LMK00804B
BODY SIZE (NOM)
TSSOP (16)
5.00 mm × 4.40 mm
1. For all available packages, see the orderable
addendum at the end of the datasheet.
Wireless and Wired Infrastructure
Networking and Data Communications
Servers and Computing
Medical Imaging
Portable Test and Measurement
High-End A/V
Additive Jitter vs VDDO Supply and Temperature
4 Simplified Schematic
0.10
LVCMOS RPD
_CLK
RPD
CLK
RPU/
nCLK
RPD
CLK_SEL
0.09
D
Q
0
Q0
1
Q1
RPU
Q2
RPU = Pullup
RPD = Pulldown
(1)
±40C
25°C
85°C
fCLK = 125 MHz
Input Slew Rate = 3 V/ns
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.5
Q3
OE
Additive Jitter (ps RMS)
CLK_EN
RPU
1.8
2.5
VDDO Supply (V)
3.3
C002
RPU
RPU = 51 kΩ pullup, RPD = 51 kΩ pulldown.
See Figure 10
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMK00804B
SNAS642A – JUNE 2014 – REVISED JULY 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
7.13
8
9
1
1
1
1
3
3
4
Pin Characteristics .................................................... 4
Absolute Maximum Ratings ...................................... 4
Handling Ratings....................................................... 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 5
Power Supply Characteristics ................................... 5
LVCMOS / LVTTL DC Characteristics ...................... 5
Differential Input DC Characteristics......................... 6
Electrical Characteristics (VDDO = 3.3 V ± 5%)....... 6
Electrical Characteristics (VDDO = 2.5 V ± 5%)..... 7
Electrical Characteristics (VDDO = 1.8 V ± 0.15 V) 8
Electrical Characteristics (VDDO = 1.5 V ± 5%)..... 9
Typical Characteristics .......................................... 10
Parameter Measurement Information ................ 11
Detailed Description ............................................ 12
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
13
13
10 Applications and Implementation...................... 14
10.1
10.2
10.3
10.4
10.5
10.6
Application Information..........................................
Output Clock Interface Circuit ...............................
Input Detail ............................................................
Input Clock Interface Circuits ................................
Typical Applications ..............................................
Do's and Don'ts .....................................................
14
14
14
15
18
21
11 Power Supply Recommendations ..................... 23
11.1 Power Supply Considerations............................... 23
12 Layout................................................................... 24
12.1 Layout Guidelines ................................................. 24
12.2 Layout Example .................................................... 25
13 Device and Documentation Support ................. 26
13.1
13.2
13.3
13.4
Device Support......................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
26
26
26
26
14 Mechanical, Packaging, and Orderable
Information ........................................................... 26
Changes from Original (June 2014) to Revision A
Page
•
Added Device Comparison Table .......................................................................................................................................... 3
•
Changed Human Body Model (HBM) value from 2000 to 1000 ............................................................................................ 4
•
Changed Charged Device Model (CDM) value from 750 to 250 .......................................................................................... 4
2
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5 Device Comparison Table
PART NUMBER
DESCRIPTION
CDCLVC1310
10 outputs LVCMOS fanout buffer with Diff, Single-Ended, or Crystal Input
LMK00725
5 output LVPECL fanout buffer with Differential or Single-Ended Input
6 Pin Configuration and Functions
16 Pin
PW Package
Top View
GND
1
16
Q0
OE
2
15
VDDO
VDD
3
14
Q1
CLK_EN
4
13
GND
CLK
5
12
Q2
nCLK
6
11
VDDO
CLK_SEL
7
10
Q3
LVCMOS_CLK
8
9
GND
Pin Functions
TERMINAL
NAME
GND
NUMBER
TYPE (1)
DESCRIPTION
1, 9, 13
G
Power supply ground
OE
2
I, RPU
VDD
3
P
CLK_EN
4
I, RPU
0 = Outputs are forced to logic low state
1 = Outputs are enabled with LVCMOS/LVTT levels
CLK
5
I, RPD
Non-inverting differential clock input 0.
nCLK
6
I, RPD/RPU
CLK_SEL
7
I, RPU
0 = Select LVCMOS_CLK
1 = Select CLK, nCLK
LVCMOS_CLK
8
I, RPD
Single-ended clock input. Accepts LVCMOS/LVTTL levels.
Q3, Q2, Q1, Q0
10, 12, 14, 16
O
Single-ended clock outputs with LVCMOS/LVTTL levels, 7Ω output impedance
11, 15
P
Output supply terminals
Output enable input.
0 = Outputs in Hi-Z state
1 = Outputs in active state
Power supply terminal
Synchronous clock enable input.
Inverting differential clock input 0. Internally biased to VDD/2 when left floating
Clock select input.
VDDO
(1)
G = Ground, I = Input, O = Output, P = Power, RPU = 51 kΩ pullup, RPD = 51 kΩ pulldown.
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7 Specifications
7.1 Pin Characteristics
MIN
TYP
MAX
UNIT
CIN
Input Capacitance
1
pF
RPU
Input Pullup Resistance
51
kΩ
RPD
Input Pulldown Resistance
51
kΩ
CPD
Power Dissipation Capacitance (per output)
2
pF
ROUT
Output impedance
7
Ω
7.2 Absolute Maximum Ratings (1) (2)
Over operating free-air temperature range (unless otherwise noted)
MAX
UNIT
VDD
Core Supply Voltage
–0.3
MIN
3.6
V
VDDO
Output Supply Voltage
–0.3
3.6
V
VIN
Input Voltage Range
–0.3
VDD
+0.3
V
TJ
Junction Temperature
150
°C
(1)
(2)
TYP
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
7.3 Handling Ratings
MIN
Tstg
Storage temperature range
V(ESD)
(1)
(2)
(3)
Electrostatic discharge (1)
–65
MAX
UNIT
150
°C
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all
pins (2)
1000
Charged device model (CDM), per
JEDEC specification JESD22-C101,
all pins (3)
250
V
Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in
to the device.
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.4 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
VDD
VDDO
Core Supply Voltage
Output Supply Voltage
TA
Ambient Temperature
TJ
Junction Temperature
4
MIN
TYP
MAX
UNIT
3.135
3.3
3.465
V
3.135
3.3
3.465
2.375
2.5
2.625
1.65
1.8
1.95
1.425
1.5
1.575
-40
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V
85
°C
125
°C
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7.5 Thermal Information
Over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC (1)
R θJA
(1)
MIN
TYP
Package Thermal Impedance, Junction to Air (0 LFPM)
MAX
UNIT
116
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
7.6 Power Supply Characteristics
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
IDD
Power Supply Current through VDD
21
mA
IDDO
Power Supply Current through VDDO
5
mA
7.7 LVCMOS / LVTTL DC Characteristics
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
CLK_EN,
VIH
Input High Voltage
CLK_SEL, OE
LVCMOS_CLK
CLK_EN,
VIL
Input Low Voltage
CLK_SEL, OE
LVCMOS_CLK
CLK_EN,
IIH
Input High Current
CLK_SEL, OE
LVCMOS_CLK
CLK_EN,
IIL
Input Low Current
CLK_SEL, OE
LVCMOS_CLK
VOH
Output High Voltage (1)
Output Low Voltage (1)
Output Hi-Z Current Low
IOZH
Output Hi-Z Current High
(1)
MAX
UNIT
2
VDD +
0.3
V
2
VDD +
0.3
V
–0.3
0.8
–0.3
1.3
5
VDD = 3.465 V,
VIN = 3.465 V
150
V
µA
VDD = 3.465 V,
VIN = 0 V
–150
VDD = 3.465 V,
VIN = 0 V
–5
VDDO = 3.3 V ± 5%
2.6
VDDO = 2.5 V ± 5%
1.8
VDDO = 1.8 V ± 0.15 V
1.5
µA
V
VDDO –
0.3
VDDO = 3.3 V ± 5%
0.5
VDDO = 2.5 V ± 5%
0.5
VDDO = 1.8 V ± 0.15 V
0.4
VDDO = 1.5 V ± 5%
IOZL
TYP
VDD = 3.465 V,
VIN = 3.465 V
VDDO = 1.5 V ± 5%
VOL
MIN
V
0.35
–5
5
µA
Outputs terminated with 50 Ω to VDDO/2.
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7.8 Differential Input DC Characteristics
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
VID
Differential Input Voltage Swing,
(VIH-VIL) (1)
VICM
Input Common Mode Voltage (1) (2)
IIH
Input High Current
IIL
(1)
(2)
(3)
Input Low Current
TEST CONDITIONS
MIN
TYP
MAX
0.15
1.3
V
0.5
VDD –
0.85
V
nCLK
VDD = 3.465 V,
VIN = 3.465 V
150
CLK
VDD = 3.465 V,
VIN = 3.465 V
150
nCLK
VDD = 3.465 V ,
VIN = 0 V
CLK
VDD = 3.465 V,
VIN = 0 V
(3)
(3)
UNIT
µA
-150
µA
-5
VIL should not be less than -0.3 V.
Input common mode voltage is defined as VIH.
For IIH and IIL measurements on CLK or nCLK, one must comply with VID and VICM specifications by using the appropriate bias on nCLK
or CLK.
7.9 Electrical Characteristics (VDDO = 3.3 V ± 5%)
Over recommended operating free-air temperature range (unless otherwise noted), VDD = VDDO = 3.3V ± 5%,
All AC parameters measured at ≤ 350 MHz unless otherwise noted.
PARAMETER
tPDLH
Propagation Delay,
Low to High
LVCMOS_CLK
CLK/nCLK (5)
(3)
tSK(O)
Output Skew (2) (6) (7)
tSK(PP)
Part-to-Part Skew (3) (7) (8)
tR/tF
Output Rise/Fall Time
JADD
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
6
TEST CONDITIONS
MIN
TYP
MAX
UNIT
350
MHz
1.1
2.1
ns
0.95
2.2
ns
35
ps
700
ps
700
ps
Maximum Output Frequency (1) (2)
fOUT
(4)
,
0°C to 70°C
–40°C to 85°C
Measured on rising edge
(3)
Additive Jitter (9)
20% to 80%
f=125 MHz,
Input slew rate ≥ 3 V/ns,
12 kHz to 20 MHz
integration band
50
0.04
ps RMS
There is no minimum input / output frequency provided the input slew rate is sufficiently fast. Refer to Input Slew Rate Considerations.
These AC parameters are specified by characterization. Not tested in production.
These AC parameters are specified by design. Not tested in production
Measured from the VDD/2 of the input to the VDDO/2 of the output.
Measured from the differential input crossing point to VDDO/2 of the output.
Defined as skew between outputs at the same supply voltage and with equal loading conditions. Measured at VDDO/2 of the output.
Parameter is defined in accordance with JEDEC Standard 65.
Calculation for part-to-part skew is the difference between the fastest and slowest tPD across multiple devices, operating at the same
supply voltage, same frequency, same temperature, with equal load conditions, and using the same type of inputs on each device.
Buffer Additive Jitter: JADD = SQRT(JSYSTEM 2 - JSOURCE2), where JSYSTEM is the RMS jitter of the system output (source+buffer) and
JSOURCE is the RMS jitter of the input source, and system output noise is not correlated to the input source noise. Additive jitter should
be considered only when the input source noise floor is 3 dB or better than the buffer noise floor (PNFLOOR). This is usually the case for
high-quality ultra-low-noise oscillators. Please refer to System-Level Phase Noise and Additive Jitter Measurement for input source and
measurement details.
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Electrical Characteristics (VDDO = 3.3 V ± 5%) (continued)
Over recommended operating free-air temperature range (unless otherwise noted), VDD = VDDO = 3.3V ± 5%,
All AC parameters measured at ≤ 350 MHz unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
f = 125 MHz,
Input slew rate ≥ 3 V/ns
PNFLOOR
Phase Noise Floor
(10)
10 kHz offset
-155
100 kHz offset
-162
1 MHz offset
-166
10 MHz offset
-166
20 MHz offset
dBc/Hz
-166
REF = CLK/nCLK
45%
55%
REF = LVCMOS_CLK,
f ≤ 300 MHz
45%
55%
ODC
Output Duty Cycle (11) (12)
tEN
Output Enable Time
5
ns
tDIS
Output Disable Time
5
ns
(10) Buffer Phase Noise Floor: PNFLOOR (dBc/Hz) = 10 x log10[10^(PNSYSTEM/10) – 10^(PNSOURCE/10)], where PNSYSTEM is the phase noise
floor of the system output (source+buffer) and PNSOURCE is the phase noise floor of the input source. Buffer Phase Noise Floor should
be considered only when the input source noise floor is 3 dB or better than the buffer noise floor (PNFLOOR). This is usually the case for
high-quality ultra-low-noise oscillators. Please refer to System-Level Phase Noise and Additive Jitter Measurement for input source and
measurement details.
(11) These AC parameters are specified by design. Not tested in production
(12) 50% Input duty cycle
7.10 Electrical Characteristics (VDDO = 2.5 V ± 5%)
Over recommended operating free-air temperature range (unless otherwise noted), VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%,
All AC parameters measured at ≤ 350 MHz unless otherwise noted.
PARAMETER
fOUT
Maximum Output Frequency (1)
tPDLH
Propagation Delay,
Low to High (3)
tSK(O)
Output Skew (2) (6) (7)
tSK(PP)
Part-to-Part Skew (3) (7) (8)
tR/tF
Output Rise/Fall Time (3)
TEST CONDITIONS
LVCMOS_CLK (4),
CLK/nCLK (5)
(9)
JADD
Additive Jitter
ODC
Output Duty Cycle (3) (10)
MIN
TYP
MAX
UNIT
350
MHz
1.1
2.1
ns
0.95
2.2
(2)
0°C to 70°C
–40°C to 85°C
Measured on rising edge
20% to 80%
50
f=125 MHz,
Input slew rate ≥ 3 V/ns,
12 kHz to 20 MHz
integration band
35
ps
700
ps
700
ps
0.04
ps RMS
REF = CLK/nCLK
45%
55%
REF = LVCMOS_CLK,
f ≤ 300 MHz
45%
55%
tEN
Output Enable Time
5
ns
tDIS
Output Disable Time
5
ns
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
There is no minimum input / output frequency provided the input slew rate is sufficiently fast. Refer to Input Slew Rate Considerations.
These AC parameters are specified by characterization. Not tested in production.
These AC parameters are specified by design. Not tested in production.
Measured from the VDD/2 of the input to the VDDO/2 of the output.
Measured from the differential input crossing point to VDDO/2 of the output.
Defined as skew between outputs at the same supply voltage and with equal loading conditions. Measured at VDDO/2 of the output.
Parameter is defined in accordance with JEDEC Standard 65.
Calculation for part-to-part skew is the difference between the fastest and slowest tPD across multiple devices, operating at the same
supply voltage, same frequency, same temperature, with equal load conditions, and using the same type of inputs on each device.
(9) Buffer Additive Jitter: JADD = SQRT(JSYSTEM2 - JSOURCE2), where JSYSTEM is the RMS jitter of the system output (source+buffer) and
JSOURCE is the RMS jitter of the input source, and system output noise is not correlated to the input source noise. Additive jitter should
be considered only when the input source noise floor is 3 dB or better than the buffer noise floor (PNFLOOR). This is usually the case for
high-quality ultra-low-noise oscillators. Please refer to System-Level Phase Noise and Additive Jitter Measurement for input source and
measurement details.
(10) 50% Input Duty Cycle
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7.11 Electrical Characteristics (VDDO = 1.8 V ± 0.15 V)
Over recommended operating free-air temperature range (unless otherwise noted), VDD = 3.3 V ± 5%,
VDDO = 1.8 V ± 0.15 V. All AC parameters measured at ≤ 350 MHz unless otherwise noted.
PARAMETER
fOUT
tPDLH
Propagation Delay,
LVCMOS_CLK
CLK/nCLK (5)
Low to High (3)
tSK(O)
Output Skew (2) (6) (7)
tSK(PP)
Part-to-Part Skew (3) (7) (8)
tR/tF
TEST CONDITIONS
MIN
TYP
MAX
UNIT
350
MHz
1.1
2.2
ns
0.95
2.3
ns
35
ps
700
ps
700
ps
Maximum Output Frequency (1) (2)
Output Rise/Fall Time
(4)
,
0°C to 70°C
–40°C to 85°C
Measured on rising edge
(3)
20% to 80%
100
f=125 MHz,
Input slew rate ≥ 3 V/ns,
12 kHz to 20 MHz
integration band
JADD
Additive Jitter (9)
ODC
Output Duty Cycle (3) (10)
tEN
Output Enable Time
5
ns
tDIS
Output Disable Time
5
ns
0.04
ps RMS
REF = CLK/nCLK
45%
55%
REF = LVCMOS_CLK,
f ≤ 300 MHz
45%
55%
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
There is no minimum input / output frequency provided the input slew rate is sufficiently fast. Refer to Input Slew Rate Considerations.
These AC parameters are specified by characterization. Not tested in production.
These AC parameters are specified by design. Not tested in production.
Measured from the VDD/2 of the input to the VDDO/2 of the output.
Measured from the differential input crossing point to VDDO/2 of the output.
Defined as skew between outputs at the same supply voltage and with equal loading conditions. Measured at VDDO/2 of the output.
Parameter is defined in accordance with JEDEC Standard 65.
Calculation for part-to-part skew is the difference between the fastest and slowest tPD across multiple devices, operating at the same
supply voltage, same frequency, same temperature, with equal load conditions, and using the same type of inputs on each device.
(9) Buffer Additive Jitter: JADD = SQRT(JSYSTEM2 - JSOURCE 2), where JSYSTEM is the RMS jitter of the system output (source+buffer) and
JSOURCE is the RMS jitter of the input source, and system output noise is not correlated to the input source noise. Additive jitter should
be considered only when the input source noise floor is 3 dB or better than the buffer noise floor (PNFLOOR). This is usually the case for
high-quality ultra-low-noise oscillators. Please refer to System-Level Phase Noise and Additive Jitter Measurement for input source and
measurement details.
(10) 50% Input Duty Cycle
8
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7.12 Electrical Characteristics (VDDO = 1.5 V ± 5%)
Over recommended operating free-air temperature range (unless otherwise noted), VDD = 3.3V ± 5%, VDDO = 1.5V ± 5%,
All AC parameters measured at ≤ 350 MHz unless otherwise noted.
PARAMETER
fOUT
tPDLH
Propagation Delay,
LVCMOS_CLK
CLK/nCLK (5)
Low to High (3)
tSK(O)
Output Skew (2) (6) (7)
tSK(PP)
Part-to-Part Skew (2) (7) (8)
tR/tF
TEST CONDITIONS
MIN
TYP
MAX
UNIT
350
MHz
1.1
2.2
ns
0.95
2.3
ns
35
ps
1
ns
900
ps
Maximum Output Frequency (1) (2)
Output Rise/Fall Time
(4)
,
0°C to 70°C
–40°C to 85°C
Measured on rising edge
(3)
20% to 80%
100
f=125 MHz,
Input slew rate ≥ 3 V/ns,
12 kHz to 20 MHz
integration band
JADD
Additive Jitter (9)
ODC
Output Duty Cycle (3) (10)
tEN
Output Enable Time
5
ns
tDIS
Output Disable Time
5
ns
0.04
ps RMS
f ≤ 166 MHz
45%
55%
f > 166 MHz
42%
58%
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
There is no minimum input / output frequency provided the input slew rate is sufficiently fast. Refer to Input Slew Rate Considerations.
These AC parameters are specified by characterization. Not tested in production.
These AC parameters are specified by design. Not tested in production.
Measured from the VDD/2 of the input to the VDDO/2 of the output.
Measured from the differential input crossing point to VDDO/2 of the output.
Defined as skew between outputs at the same supply voltage and with equal loading conditions. Measured at VDDO/2 of the output.
Parameter is defined in accordance with JEDEC Standard 65.
Calculation for part-to-part skew is the difference between the fastest and slowest tPD across multiple devices, operating at the same
supply voltage, same frequency, same temperature, with equal load conditions, and using the same type of inputs on each device.
(9) Buffer Additive Jitter: JADD = SQRT(JSYSTEM2 - J SOURCE2), where JSYSTEM is the RMS jitter of the system output (source+buffer) and
JSOURCE is the RMS jitter of the input source, and system output noise is not correlated to the input source noise. Additive jitter should
be considered only when the input source noise floor is 3 dB or better than the buffer noise floor (PNFLOOR). This is usually the case for
high-quality ultra-low-noise oscillators. Please refer to System-Level Phase Noise and Additive Jitter Measurement for input source and
measurement details.
(10) 50% Input Duty Cycle
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7.13 Typical Characteristics
Unless otherwise noted: VDD = 3.3 V, VDDO = 3.3 V, TA = 25°C
0.30
0.09
Additive Jitter (ps RMS)
0.25
Additive Jitter (ps RMS)
0.10
100 MHz
125 MHz
250 MHz
350 MHz
0.20
0.15
0.10
0.05
±40C
25°C
85°C
fCLK = 125 MHz
Input Slew Rate = 3 V/ns
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.00
0
1
2
3
4
5
Input Slew Rate (V/ns)
6
±152
±154
±156
±158
±160
±162
±164
±166
±168
0
1
2
3
4
5
Input Slew Rate (V/ns)
10
±158
±159
3.3
C002
±40C
25°C
85°C
fCLK = 125 MHz
Input Slew Rate = 3 V/ns
±160
±161
±162
±163
±164
±165
±166
±167
±168
1.5
6
1.8
2.5
VDDO Supply (V)
C003
Figure 3. Phase Noise Floor vs Input Slew Rate
2.5
Figure 2. Additive Jitter vs VDDO Supply and Temperature
100 MHz
125 MHz
250 MHz
350 MHz
±150
1.8
VDDO Supply (V)
Phase Noise @ 10 MHz Offset (dBc/Hz)
Phase Noise @ 10 MHz Offset (dBc/Hz)
Figure 1. Additive Jitter vs Input Slew Rate
±148
1.5
C001
3.3
C004
Figure 4. Phase Noise Floor vs VDDO Supply and
Temperature
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8 Parameter Measurement Information
VCC
VIH = VICM
nCLK
VID = |VIH ± VIL|
CLK
VIL
VCM
GND
NOTE: VCM = VICM - VID/2 = (V IH + VIL)/2
Figure 5. Differential Input Level
space
VOH
80%
VOUT
20%
VOL
Q
tR
tF
Figure 6. Output Voltage, and Rise and Fall Times
space
LVCMOS
Input
LVCMOS_CLK
nCLK
CLK
Differential
Input
tPD
LVCMOS
Outputx
Qx
tSK
LVCMOS
Outputy
Qy
Figure 7. Output Skew and Propagation Delay
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9 Detailed Description
9.1 Overview
The LMK00804B is a low skew, high performance clock fanout buffer which can distribute up to four
LVCMOS/LVTTL outputs (3.3-V, 2.5-V, 1.8-V, or 1.5-V levels) from one of two selectable inputs, which can
accept differential or single-ended inputs. The clock enable input is synchronized internally to eliminate runt or
glitch pulses on the outputs when the clock enable terminal is asserted or de-asserted. The outputs are held in
logic low state when the clock is disabled. A separate output enable terminal controls whether the outputs are
active state or high-impedance state. The low additive jitter and phase noise floor, and guaranteed output and
part-to-part skew characteristics make the LMK00804B ideal for applications demanding high performance and
repeatability.
9.2 Functional Block Diagram
CLK_EN
RPU
LVCMOS RPD
_CLK
RPD
CLK
RPU/
nCLK
RPD
CLK_SEL
D
Q
0
Q0
1
Q1
RPU
Q2
RPU = Pullup
RPD = Pulldown
Q3
OE
12
RPU
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9.3 Feature Description
9.3.1 Clock Enable Timing
After CLK_EN switches, the clock outputs are disabled or enabled following a rising and falling input clock edge as shown in
Figure 8. In the enabled mode, the output states are a function of the CLK/nCLK or LVCMOS_CLK inputs as described in
Clock Input Function.
LVCMOS_CLK
nCLK
CLK
Disabled
CLK_EN
Enabled
Qx
Figure 8. Clock Enable Timing Diagram
9.4 Device Functional Modes
The device can provide fan-out and level translation from differential or single-ended input to LVCMOS/LVTTL
output, where the output VOH and VOL levels are determined by the VDDO output supply voltage and output
load condition. Refer to the Clock Input Function.
9.4.1 Clock Input Function
Table 1.
INPUTS
OUTPUTS
INPUT to OUTPUT
MODE
POLARITY
CLK (or LVCMOS_CLK)
nCLK
Qx
0
1
LOW
Differential (or SingleEnded) to Single-Ended
Non-inverting
1
0
HIGH
Differential (or SingleEnded) to Single-Ended
Non-inverting
0
Floating or Biased
LOW
Single-Ended to SingleEnded
Non-inverting
1
Floating or Biased
HIGH
Single-Ended to SingleEnded
Non-inverting
Biased
0
HIGH
Single-Ended to SingleEnded
Inverting
Biased
1
LOW
Single-Ended to SingleEnded
Inverting
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10 Applications and Implementation
10.1 Application Information
Refer to the following sections for output clock and input clock interface circuits.
10.2 Output Clock Interface Circuit
VDDO
RS= 43
LVCMOS
Input
Zo = 50
LMK00804
Parasitic Input Capacitance
Figure 9. LVCMOS Output Configuration
10.3 Input Detail
LMK00804
LVCMOS_CLK
51k
CLK
51k
VDD
51k
nCLK
51k
Figure 10. Clock Input Components
14
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10.4 Input Clock Interface Circuits
3.3 V
3.3V
LMK00804B
Rs
LVMOS
_CLK
Zo = 50Ω
Zo
Clock generator:
Zo + Rs = 50Ω
Figure 11. LVCMOS_CLK Input Configuration
3.3V
3.3V
3.3V
3.3V
LMK00804B
R = 100Ω
R = 1kΩ
Rs
CLK
Zo = 50Ω
Zo
DUT
nCLK
R = 100Ω
R = 1kΩ
C = 0.1µF
Clock generator:
Zo + Rs = 50Ω
(1)
The Thevenin/split termination values (R = 100 Ω) at the CLK input may be adjusted to provide a small differential
offset voltage (50 mV, for example) between the CLK and nCLK inputs to prevent input chatter if the LVCMOS driver
is tri-stated. For example, using 105 Ω 1% to 3.3 V rail and 97.6 Ω 1% to GND will provide a –60 mV offset voltage
(VnCLK-VCLK) and ensure a logic low state if the LVCMOS driver is tri-stated.
Figure 12. Single-Ended/LVCMOS Input DC Configuration
3.3V
LMK00804B
3.3V
R = 125
3.3V
R = 125
Zo = 50
CLK
LVPECL
output
nCLK
DUT
Zo = 50
R = 84
R = 84
Figure 13. LVPECL Input Configuration
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Input Clock Interface Circuits (continued)
3.3V
3.3V
LMK00804B
Zo = 50
CLK
LVPECL
output
DUT
nCLK
Zo = 50
R = 50
R = 50
R = 50
Figure 14. Alternative LVPECL Input Configuration
3.3V
3.3V
LMK00804B
R = 33
Zo = 50
CLK
HCSL
output
nCLK
DUT
Zo = 50
R = 33
R = 50
R = 50
Figure 15. HCSL Input Configuration
3.3V
LMK00804B
3.3V
Zo = 50
CLK
LVDS
output
R = 100
DUT
nCLK
Zo = 50
Figure 16. LVDS Input Configuration
16
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Input Clock Interface Circuits (continued)
3.3V
2.5V
R = 120
LMK00804B
3.3V
R = 120
Zo = 60
CLK
SSTL
output
DUT
nCLK
Zo = 60
R = 120
R = 120
Figure 17. SSTL Input Configuration
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10.5 Typical Applications
10.5.1 Design Requirements
For high-performance devices, limitations of the equipment influence phase-noise measurements. The noise floor
of the equipment is often higher than the noise floor of the device. The real noise floor of the device is probably
lower. It is important to understand that system-level phase noise measured at the DUT output is influenced by
the input source and the measurement equipment.
For Figure 18 and Figure 19 system-level phase noise plots, a Rohde & Schwarz SMA100A low-noise signal
generator was cascaded with an Agilent 70429A K95 single-ended to differential converter block with ultra-low
phase noise and fast edge slew rate (>3 V/ns) to provide a very low-noise clock input source to the LMK00804B.
An Agilent E5052 source signal analyzer with ultra-low measurement noise floor was used to measure the phase
noise of the input source (SMA100A + 70429A K95) and system output (input source + LMK00804B). The input
source phase noise is shown by the light yellow trace, and the system output phase noise is shown by the dark
yellow trace.
10.5.2 Detailed Design Procedure
The additive phase noise or noise floor of the buffer (PNFLOOR) can be computed as follows:
PNFLOOR (dBc/Hz) = 10 x log10[10^(PNSYSTEM/10) – 10^(PNSOURCE/10)]
where
•
•
PNSYSTEM is the phase noise of the system output (source+buffer)
PNSOURCE is the phase noise of the input source
(1)
The additive jitter of the buffer (JADD) can be computed as follows:
JADD = SQRT(JSYSTEM2– JSOURCE2)
where:
•
•
18
JSYSTEM is the RMS jitter of the system output (source+buffer), integrated from 10 kHz to 20 MHz
JSOURCE is the RMS jitter of the input source, integrated from 10 kHz to 20 MHz
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Typical Applications (continued)
10.5.3 Application Curves
10.5.3.1 System-Level Phase Noise and Additive Jitter Measurement
Figure 18.
125 MHz Input Phase Noise (57 fs rms, Light Blue),
and Output Phase Noise (71 fs rms, Dark Blue),
Additive Jitter = 42 fs rms
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Typical Applications (continued)
Figure 19.
156.25 MHz Input Phase Noise (57 fs rms, Light Blue),
and Output Phase Noise (72 fs rms, Dark Blue),
Additive Jitter = 44 fs rms
20
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10.6 Do's and Don'ts
10.6.1 Power Considerations
The following power consideration refers to the device-consumed power consumption only. The device power
consumption is the sum of static power and dynamic power. The dynamic power usage consists of two
components:
• Power used by the device as it switches states
• Power required to charge any output load
The output load can be capacitive-only or capacitive and resistive. Use the following formula to calculate the
power consumption of the device:
PDev = Pstat + Pdyn + PCload
Pstat = (IDD × VDD) + (IDDO × VDDO)
Pdyn + PCload = (IDDO,dyn + IDDO,Cload) × VDDO
(3)
(4)
where:
•
•
IDDO,dyn = CPD × VDDO × f × n [mA]
IDDO,Cload = Cload × VDDO × f × n [mA]
(5)
Example for power consumption of the LMK00804B: 4 outputs are switching, f = 100 MHz,
VDD = VDDO = 3.465 V and assuming Cload = 5 pF per output:
PDev = 90 mW + 34 mW = 124 mW
Pstat = (21 mA × 3.465 V) + (5 mA × 3.465 V)= 90 mW
Pdyn + PCload = (2.8 mA + 6.9 mA) x 3.465 V = 34 mW
IDD,dyn = 2 pF × 3.465 V × 100 MHz × 4 = 2.8 mA
IDD,Cload = 5 pF × 3.465 V x 100 MHz × 4 = 6.9 mA
(6)
(7)
(8)
(9)
(10)
NOTE
For dimensioning the power supply, consider the total power consumption. The total
power consumption is the sum of device power consumption and the power consumption
of the load.
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Do's and Don'ts (continued)
10.6.2 Recommendations for Unused Input and Output Pins
• CLK_SEL, CLK_EN, and OE: These inputs all have internal pull-up (RPU) according to Table 2 and can be
left floating if unused. Table 2 shows the default floating state of these inputs:
Table 2. Input Floating Default States
INPUT
•
•
•
FLOATING STATE SELECTION
CLK_SEL
CLK/nCLK selected
CLK_EN
Synchronous outputs enable
OE
Outputs enabled
CLK/nCLK Inputs: See Figure 10 for the internal connections. When using single ended input, take note of
the internal pull-up and pull-down to make sure the unused input is properly biased. To interface a singleended input to the CLK/nCLK input, the configuration shown in Figure 12 is recommended.
LVCMOS_CLK Input: See Figure 10 for the internal connection. The internal pull-down (RPD) resistor
ensures a low state when this input is left floating.
Outputs: Any unused output can be left floating with no trace connected.
10.6.3 Input Slew Rate Considerations
LMK00804B employs high-speed and low-latency circuit topology, allowing the device to achieve ultra-low
additive jitter/phase noise and high-frequency operation. To take advantage of these benefits in the system
application, it is optimal for the input signal to have a high slew rate of 3 V/ns or greater. Driving the input with a
slower slew rate can degrade the additive jitter and noise floor performance. For this reason, a differential signal
input is recommended over single-ended because it typically provides higher slew rate and common-moderejection. Refer to the “Additive Jitter vs. Input Slew Rate” plots in Typical Characteristics. Also, using an input
signal with very slow input slew rate, such as less than 0.05 V/ns, has the tendency to cause output switching
noise to feed-back to the input stage and cause the output to chatter. This is especially true when driving either
input in single-ended fashion with a very slow slew rate, such as a sine-wave input signal.
22
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11 Power Supply Recommendations
11.1 Power Supply Considerations
While there is no strict power supply sequencing requirement, it is generally best practice to sequence the core
supply voltage (VDD) before the output supply voltage (VDDO).
11.1.1 Power-Supply Filtering
High-performance clock buffers are sensitive to noise on the power supply, which can dramatically increase the
additive jitter of the buffer. Thus, it is essential to reduce noise from the system power supply, especially when
jitter or phase noise is critical to applications.
Use of filter capacitors eliminates the low-frequency noise from power supply, where the bypass capacitors
provide the very low-impedance path for high-frequency noise and guard the power-supply system against
induced fluctuations. The bypass capacitors also provide instantaneous current surges as required by the device,
and should have low ESR. To use the bypass capacitors properly, place them very close to the power supply
terminals and lay out traces with short loops to minimize inductance. TI recommends to adding as many highfrequency (for example, 0.1 µF) bypass capacitors as there are supply terminals in the package. It is
recommended, but not required, to insert a ferrite bead between the board power supply and the chip power
supply to isolate the high-frequency switching noises generated by the clock driver, preventing them from leaking
into the board supply. Choosing an appropriate ferrite bead with very low DC resistance is important, because it
is imperative to provide adequate isolation between the board supply and the chip supply. It is also imperative to
maintain a voltage at the supply terminals that is greater than the minimum voltage required for proper operation.
Board
Supply
Vcc
Chip
Supply
Ferrite Bead
C
10 µF
C
1 µF
0.1 µF (3
places, one
per Vcc pin)
Figure 20. Power-Supply Decoupling
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Power Supply Considerations (continued)
11.1.2 Thermal Management
For reliability and performance reasons, limit the die temperature to a maximum of 125°C. That is, as an
estimate, TA (ambient temperature) plus device power consumption times θJA should not exceed 125°C.
Assuming the conditions in the Power Considerations section and operating at an ambient temperature of 70°C
with all outputs loaded, here is an estimate of the LMK00804B junction temperature:
TJ= TA+ PTotal x θJA= 70 °C + (124 mW x 116 °C/W) = 70 °C + 14.4 °C = 84.4 °C
(11)
Here are some recommendations for improving heat flow away from the die:
• Use multi-layer boards
• Specify a higher copper thickness for the board
• Increase the number of vias from the top level ground plane under and around the device to internal layers
and to the bottom layer with as much copper area flow on each level as possible
• Apply air flow
• Leave unused outputs floating
12 Layout
12.1 Layout Guidelines
12.1.1 Ground Planes
Solid ground planes are recommended as they provide a low-impedance return paths between the device and its
bypass capacitors and its clock source and destination devices.
Avoid return paths of other system circuitry (for example, high-speed/digital logic, switching power supplies, and
so forth) from passing through the local ground of the device to minimize noise coupling, which could induce
added jitter and spurious noise.
12.1.2 Power Supply Pins
Follow the power supply schematic and layout example described in Power-Supply Filtering.
12.1.3 Differential Input Termination
• Place input termination or biasing resistors as close as possible to the CLK/nCLK pins.
• Avoid or minimize vias in the 50 Ω input traces to minimize impedance discontinuities. Intra-pair skew should
be also be minimized on the differential input traces.
• If not used, CLK/nCLK inputs may be left floating.
12.1.4 LVCMOS Input Termination
• When the LVCMOS_CLK input is driven from a LVCMOS driver that is series terminated to match the
characteristic impedance of the trace, then input termination is not necessary; otherwise, place the input
termination resistor as close as possible to the LVCMOS_CLK input.
• Avoid or minimize vias in the 50 Ω input trace to minimize impedance discontinuities.
• If not used, LVCMOS_CLK input may be left floating.
12.1.5 Output Termination
• Place 43 Ω series termination resistors as close as possible to the Qx outputs at the launch of the 50 Ω
traces.
• Avoid or minimize vias in the 50 Ω input traces to minimize impedance discontinuities.
• If not used, any Qx output should be left floating and not routed.
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12.2 Layout Example
Please refer to the LMK00804BEVM for a layout example. A sample PCB layer is shown below.
Figure 21. Sample PCB Layout, Layer 1 (Top View)
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13 Device and Documentation Support
13.1 Device Support
For device and documentation support, please direct your inquiries to the TI E2E Support Forums for Clocking
Products.
13.2 Trademarks
All trademarks are the property of their respective owners.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMK00804BPW
ACTIVE
TSSOP
PW
16
92
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
K00804B
LMK00804BPWR
ACTIVE
TSSOP
PW
16
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
K00804B
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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