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LMK61PD0A2
SNAS675A – OCTOBER 2015 – REVISED NOVEMBER 2015
LMK61PD0A2 Ultra-Low Jitter Pin Selectable Oscillator
1 Features
3 Description
•
The LMK61PD0A2 is an ultra-low jitter PLLatinumTM
pin selectable oscillator that generates commonly
used reference clocks. The device is preprogrammed in factory to support seven unique
reference clock frequencies that can be selected by
pin-strapping each of FS[1:0] to VDD, GND or NC (no
connect). Output format is selected between
LVPECL, LVDS, or HCSL by pin-strapping OS to
VDD, GND or NC. Internal power conditioning provide
excellent power supply ripple rejection (PSRR),
reducing the cost and complexity of the power
delivery network. The device operates from a single
3.3 V ± 5% supply.
1
•
•
•
•
•
•
Ultra-low Noise, High Performance
– Jitter: 90 fs RMS typical fOUT > 100 MHz
– PSRR: -70 dBc, robust supply noise immunity
Flexible Output Frequency and Format; User
Selectable
– Frequencies: 62.5 MHz, 100 MHz, 106.25
MHz, 125 MHz, 156.25 MHz, 212.5 MHz,
312.5 MHz
– Formats: LVPECL, LVDS or HCSL
Total frequency tolerance of ± 50 ppm
Internal memory stores multiple start-up
configurations, selectable through pin control
3.3V operating voltage
Industrial temperature range (-40ºC to +85ºC)
7 mm x 5 mm 8-pin package
Device Information(1)
PART NUMBER
LMK61PD0A2
PACKAGE
8-pin QFM (SIA)
BODY SIZE (NOM)
7.0 mm x 5.0 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
•
•
•
High-performance replacement for crystal-, SAW-,
or silicon-based Oscillators
Switches, Routers, Network Line Cards, Base
Band Units (BBU), Servers, Storage/SAN
Test and Measurement
Medical Imaging
FPGA, Processor Attach
Pinout and Simplified Block Diagram
FS1
Power Conditioning
7
OE
1
6
VDD
OS
2
5
OUTN
GND
3
4
OUTP
Integrated
Oscillator
PLL
Output
Divider
Interface
ROM (Pin Control)
8
FS0
Output
Buffer
LMK61PD0A2
Ultra-high performance oscillator
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMK61PD0A2
SNAS675A – OCTOBER 2015 – REVISED NOVEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Control........................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
5
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
7.13
7.14
5
5
5
5
6
6
6
7
7
7
7
8
8
9
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics - Power Supply .................
LVPECL Output Characteristics................................
LVDS Output Characteristics ....................................
HCSL Output Characteristics....................................
OE Input Characteristics ...........................................
OS, FS[1:0] Input Characteristics ...........................
Frequency Tolerance Characteristics .....................
Power-On/Reset Characteristics (VDD)..................
PSRR Characteristics .............................................
PLL Clock Output Jitter Characteristics ..................
7.15 Additional Reliability and Qualification .................... 9
7.16 Typical Performance Characteristics .................... 10
8
Parameter Measurement Information ................ 11
9
Detailed Description ............................................ 13
8.1 Device Output Configurations ................................. 11
9.1 Overview ................................................................. 13
9.2 Functional Block Diagram ....................................... 13
9.3 Feature Description................................................. 13
10 Application and Implementation........................ 14
10.1 Application Information.......................................... 14
10.2 Typical Application ................................................ 14
11 Power Supply Recommendations ..................... 16
12 Layout................................................................... 17
12.1 Layout Guidelines ................................................. 17
13 Device and Documentation Support ................. 19
13.1
13.2
13.3
13.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
14 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
Changes from Original (October 2015) to Revision A
•
2
Page
Product Preview to Production Data Release ....................................................................................................................... 1
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5 Device Control
Table 1. Output Frequency Mapping for FS[1:0] Selection
FS1
FS0
OUT FREQUENCY (MHz)
RELEVANT STANDARDS
0
0
100
PCI Express
0
NC
312.5
10 Gbps Ethernet
0
1
125
1 Gbps Ethernet
NC
0
106.25
Fiber Channel
NC
NC
156.25
10 Gbps Ethernet
NC
1
212.5
Fiber Channel
1
0
62.5
1 Gbps Ethernet
1
NC
Reserved
n/a
1
1
Reserved
n/a
Table 2. Output Type Mapping for OS, OE Selection
OS
OE
OUTPUT TYPE
X
0
Disabled (PLL functional)
0
1
LVPECL
NC
1
LVDS
1
1
HCSL
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6 Pin Configuration and Functions
SIA Package
8 pin QFM
FS1
7
OE
1
6
VDD
OS
2
5
OUTN
GND
3
4
OUTP
8
FS0
Table 3. Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
POWER
GND
3
Ground
Device Ground.
VDD
6
Analog
3.3 V Power Supply.
4, 5
Universal
OUTPUT BLOCK
OUTP,
OUTN
Differential Output Pair (LVPECL, LVDS or HCSL).
DIGITAL CONTROL / INTERFACES
FS[1:0]
7, 8
LVCMOS
Output Frequency Select. Refer toTable 1.
OE
1
LVCMOS
Output Enable (internal pullup). Refer toTable 2.
OS
3
LVCMOS
Output Type Select. Refer toTable 2.
4
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VDD
Device Supply Voltage
-0.3
3.6
V
VIN
Output Voltage Range for Logic Inputs
-0.3
VDD + 0.3
V
VOUT
Output Voltage Range for Clock Outputs
-0.3
VDD + 0.3
V
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
125
°C
(1)
-40
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
V
±1500
JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Device Supply Voltage
3.135
3.3
3.465
V
TA
Ambient Temperature
-40
25
85
°C
TJ
Junction Temperature
tRAMP
VDD Power-Up Ramp Time
0.1
125
°C
100
ms
7.4 Thermal Information
LMK61PD0A2
QFM (SIA)
THERMAL METRIC (1)
UNIT
8 PINS
Airflow (LFM) 0
RθJA
(2) (3) (4)
Junction-to-ambient thermal resistance
RθJC(top) Junction-to-case (top) thermal resistance
Airflow (LFM) 200
Airflow (LFM) 400
54
44
41.2
34
n/a
n/a
RθJB
Junction-to-board thermal resistance
36.7
n/a
n/a
ψJT
Junction-to-top characterization parameter
11.2
16.9
21.9
ψJB
Junction-to-board characterization parameter
36.7
37.8
38.9
RθJC(bot) Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
(1)
(2)
(3)
(4)
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
The package thermal resistance is calculated on a 4 layer JEDEC board.
Connected to GND with 3 thermal vias (0.3-mm diameter).
ψJB (junction to board) is used when the main heat flow is from the junction to the GND pad. Please refer to Thermal Considerations
section for more information on ensuring good system reliability and quality.
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7.5 Electrical Characteristics - Power Supply (1)
VDD = 3.3 V ± 5%, TA = -40C to 85°C
PARAMETER
IDD
Device Current Consumption
IDD-PD
(1)
(2)
TEST CONDITIONS
Device Current Consumption
when output is disabled
LVPECL
MIN
(2)
TYP
MAX
UNIT
mA
162
208
LVDS
152
196
HCSL
155
196
OE = GND
136
Refer to Parameter Measurement Information for relevant test conditions.
On-chip power dissipation should exclude 40 mW, dissipated in the 150 ohm termination resistors, from total power dissipation.
7.6 LVPECL Output Characteristics (1)
VDD = 3.3 V ± 5%, TA = -40C to 85°C
PARAMETER
TEST CONDITIONS
MIN
fOUT
Output Frequency (2)
62.5
VOD
Output Voltage Swing
(VOH - VOL) (2)
700
VOUT, DIFF, PP
Differential Output Peak-toPeak Swing
VOS
Output Common Mode
Voltage
tR / tF
Output Rise/Fall Time (20% to
80%) (3)
PN-Floor
Output Phase Noise Floor
(fOFFSET > 10 MHz)
ODC
Output Duty Cycle (3)
(1)
(2)
(3)
TYP
800
UNIT
MHz
1200
mV
2x
|VOD|
V
VDD –
1.55
V
120
156.25 MHz
MAX
312.5
200
-165
45%
ps
dBc/Hz
55%
Refer to Parameter Measurement Information for relevant test conditions.
An output frequency over fOUT max spec is possible, but output swing may be less than VOD min spec.
Ensured by characterization.
7.7 LVDS Output Characteristics (1)
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
(1)
fOUT
Output Frequency
VOD
Output Voltage Swing
(VOH - VOL) (1)
VOUT, DIFF, PP
Differential Output Peak-toPeak Swing
VOS
MIN
TYP
62.5
300
390
MAX
UNIT
312.5
MHz
480
mV
2x
|VOD|
V
Output Common Mode
Voltage
1.2
V
tR / tF
Output Rise/Fall Time (20% to
80%) (2)
150
PN-Floor
Output Phase Noise Floor
(fOFFSET > 10 MHz)
ODC
Output Duty Cycle (2)
ROUT
Differential Output Impedance
(1)
(2)
6
156.25 MHz
250
-162
45%
ps
dBc/Hz
55%
125
Ohm
An output frequency over fOUT max spec is possible, but output swing may be less than VOD min spec.
Ensured by characterization.
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7.8 HCSL Output Characteristics (1)
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fOUT
Output Frequency
62.5
312.5
MHz
VOH
Output High Voltage
600
850
mV
VOL
Output Low Voltage
-100
100
mV
VCROSS
Absolute Crossing
Voltage (2) (3)
250
475
mV
0
140
mV
0.8
2
V/ns
VCROSS-DELTA Variation of VCROSS (2) (3)
dV/dt
Slew Rate (4)
PN-Floor
Output Phase Noise Floor
(fOFFSET > 10 MHz)
ODC
Output Duty Cycle (4)
(1)
(2)
(3)
(4)
100 MHz
-164
45%
dBc/Hz
55%
Refer to Parameter Measurement Information for relevant test conditions.
Measured from -150 mV to +150 mV on the differential waveform with the 300 mVpp measurement window centered on the differential
zero crossing.
Ensured by design.
Ensured by characterization.
7.9 OE Input Characteristics
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
MIN
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input High Current
VIH = VDD
-40
IIL
Input Low Current
VIL = GND
-40
CIN
Input Capacitance
TYP
MAX
UNIT
1.4
V
0.6
V
40
uA
40
uA
2
pF
7.10 OS, FS[1:0] Input Characteristics
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
1.4
UNIT
VIH
Input High Voltage
V
VIL
Input Low Voltage
0.4
V
IIH
Input High Current
VIH = VDD
-40
40
uA
IIL
Input Low Current
VIL = GND
-40
40
uA
CIN
Input Capacitance
2
pF
7.11 Frequency Tolerance Characteristics (1)
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
fT
(1)
Total Frequency Tolerance
TEST CONDITIONS
All output formats, frequency bands and
device junction temperature up to 125°C;
includes initial freq tolerance, temperature &
supply voltage variation, solder reflow and
aging (10 years)
MIN
-50
TYP
MAX
UNIT
50
ppm
Ensured by characterization.
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7.12 Power-On/Reset Characteristics (VDD)
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
(1)
VTHRESH
Threshold Voltage
VDROOP
Allowable Voltage Droop (2)
tSTARTUP
Startup Time
tOE-EN
tOE-DIS
(1)
(2)
MIN
TYP
2.72
MAX
UNIT
2.95
V
0.1
V
Time elapsed from VDD at 3.135 V to output
enabled
10
ms
Output enable time (2)
Time elapsed from OE at VIH to output enabled
50
us
Output disable time (2)
Time elapsed from OE at VIL to output disabled
50
us
MAX
UNIT
(1)
Ensured by characterization.
Ensured by design.
7.13 PSRR Characteristics (1)
VDD = 3.3 V, TA = 25°C, FS[1:0] = NC, NC
PARAMETER
PSRR
(1)
(2)
(3)
8
Spurs Induced by 50 mV
Power Supply Ripple (2) (3) at
156.25 MHz output, all
output types
TEST CONDITIONS
MIN
TYP
Sine wave at 50 kHz
-70
Sine wave at 100 kHz
-70
Sine wave at 500 kHz
-70
Sine wave at 1 MHz
-70
dBc
Refer to Parameter Measurement Information for relevant test conditions.
Measured max spur level with 50 mVpp sinusoidal signal between 50 kHz and 1 MHz applied on VDD pin
DJSPUR (ps, pk-pk) = [2*10(SPUR/20) / (π*fOUT)]*1e6, where PSRR or SPUR in dBc and fOUT in MHz.
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7.14 PLL Clock Output Jitter Characteristics (1) (2)
VDD = 3.3 V ± 5%, TA = -40°C to 85°C
PARAMETER
TEST CONDITIONS
(3)
MIN
TYP
MAX
UNIT
RJ
RMS Phase Jitter
(12 kHz – 20 MHz)
(1 kHz – 5 MHz)
fOUT ≥ 100 MHz, All output frequencies and
output types
100
200
fs RMS
RJ
RMS Phase Jitter (3)
(12 kHz – 20 MHz)
(1 kHz – 5 MHz)
fOUT = 62.5 MHz, All output frequencies and
output types
200
400
fs RMS
(1)
(2)
(3)
Refer to Parameter Measurement Information for relevant test conditions.
Phase jitter measured with Agilent E5052 signal source analyzer using a differential-to-single ended converter (balun or buffer).
Ensured by characterization.
7.15 Additional Reliability and Qualification
PARAMETER
CONDITION / TEST METHOD
Mechanical Shock
MIL-STD-202, Method 213
Mechanical Vibration
MIL-STD-202, Method 204
Moisture Sensitivity Level
J-STD-020, MSL3
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7.16 Typical Performance Characteristics
Figure 1. Phase Noise of LVPECL Differential Output at
156.25 MHz with FS[1:0] = NC, NC, OS = GND
Figure 2. Phase Noise of LVDS Differential Output at 156.25
MHz with FS[1:0] = NC, NC, OS = NC
Output Differential Swing (Vp-p)
1.8
1.75
1.7
1.65
1.6
1.55
1.5
0
50
100
150
200
250
Output Frequency (MHz)
300
350
D016
Figure 4. LVPECL Differential Output Swing vs Frequency
Figure 3. Phase Noise of HCSL Differential Output at 156.25
MHz with FS[1:0] = NC, NC, OS = VDD
1.48
Output Differential Swing (Vp-p)
Output Differential Swing (Vp-p)
0.95
0.9
0.85
0.8
0.75
0.7
1.46
1.45
1.44
1.43
1.42
0
50
100
150
200
250
Output Frequency (MHz)
300
350
0
D017
Figure 5. LVDS Differential Output Swing vs Frequency
10
1.47
50
100
150
200
250
Output Frequency (MHz)
300
350
D018
Figure 6. HCSL Differential Output Swing vs Frequency
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8 Parameter Measurement Information
8.1 Device Output Configurations
High impedance differential probe
LMK61PD0A2
LVPECL
150
Oscilloscope
150
Figure 7. LVPECL Output DC Configuration during Device Test
High impedance differential probe
LMK61PD0A2
LVDS
Oscilloscope
Figure 8. LVDS Output DC Configuration during Device Test
High impedance differential probe
HCSL
LMK61PD0A2
50
Oscilloscope
50
Figure 9. HCSL Output DC Configuration during Device Test
LMK61PD0A2
Balun/
Buffer
LVPECL
150
Phase Noise/
Spectrum
Analyzer
150
Figure 10. LVPECL Output AC Configuration during Device Test
LMK61PD0A2
LVDS
Balun/
Buffer
Phase Noise/
Spectrum
Analyzer
Figure 11. LVDS Output AC Configuration during Device Test
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Device Output Configurations (continued)
LMK61PD0A2
Balun/
Buffer
HCSL
50
Phase Noise/
Spectrum
Analyzer
50
Figure 12. HCSL Output AC Configuration during Device Test
Sine wave
Modulator
Power Supply
LMK61PD0A2
Balun
150 (LVPECL)
Open (LVDS)
50 (HCSL)
Phase Noise/
Spectrum
Analyzer
150 (LVPECL)
Open (LVDS)
50 (HCSL)
Figure 13. PSRR Test Setup
OUT_P
VOD
OUT_N
80%
VOUT,DIFF,PP = 2 x VOD
0V
20%
tR
tF
Figure 14. Differential Output Voltage and Rise/Fall Time
12
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9 Detailed Description
9.1 Overview
The LMK61PD0A2 is a pin selectable oscillator that generates commonly used reference clocks, greater than
100 MHz, with less than 200 fs, rms max random jitter.
9.2 Functional Block Diagram
VDD
Power Conditioning
PLL
Integrated
Oscillator
Output
XO
Integer Div
¥
LVPECL
or LVDS
or HCSL
Control
FS1
N Div
3
™û fractional
FS0
3
OS
3
ROM
(Pin Control)
OE
3 = tri-state
GND
NOTE
Control blocks are compatible with 1.8/2.5/3.3 V I/O voltage levels.
9.3 Feature Description
9.3.1 Device Block-Level Description
The LMK61PD0A2 comprises of an integrated oscillator that includes a 50 MHz crystal, a fractional PLL with
integrated VCO. Completing the device is the combination of an integer output divider and a universal differential
output buffer. The on-chip ROM contains seven pre-programmed output frequency plans that selects the
appropriate settings for the integrated oscillator, PLL blocks and output divider. Table 1 lists the supported output
frequency plans that can be selected by pin-strapping FS[1:0] as required. Table 2 lists the supported output
types that can be selected by pin-strapping OS and OE as required. The device is powered by on-chip low
dropout (LDO) linear voltage regulators and the regulated supply network is partitioned such that the sensitive
analog supplies are running from separate LDOs than the digital supplies which use their own LDO. The LDOs
provide isolation from any noise in the external power supply rail with a PSRR of better than -70 dBc at 50 kHz to
1 MHz ripple frequencies at 3.3 V device supply.
9.3.2 Device Configuration Control
The LMK61PD0A2 selects an output frequency plan and output type using control pins FS[1:0].
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The LMK61PD0A2 is an ultra-low jitter pin selectable oscillator that can be used to provide reference clocks for
high-speed serial links resulting in improved system performance.
10.2 Typical Application
10.2.1 Jitter Considerations in Serdes Systems
Jitter-sensitive applications such as 10 Gbps or 100 Gbps Ethernet, deploy a serial link utilizing a Serializer in the
transmit section (TX) and a De-serializer in the receive section (RX). These SERDES blocks are typically
embedded in an ASIC or FPGA. Estimating the clock jitter impact on the link budget requires understanding of
the TX PLL bandwidth and the RX CDR bandwidth.
As can be seen in Figure 15, the pass band region between the TX low pass cutoff and RX high pass cutoff
frequencies is the range over which the reference clock jitter adds without any attenuation to the jitter budget of
the link. Outside of these frequencies, the SERDES link will attenuate the reference clock jitter with a 20 dB/dec
or even steeper roll-off. Modern ASIC or FPGA designs have some flexibility on deciding the optimal RX CDR
bandwidth and TX PLL bandwidth. These bandwidths are typically set based on what is achievable in the ASIC
or FPGA process node, without increasing design complexity, and on any jitter tolerance or wander specification
that needs to be met, as related to the RX CDR bandwidth.
The overall allowable jitter in a serial link is dictated by IEEE or other relevant standards. For example,
IEEE802.3ba states that the maximum transmit jitter (peak-peak) for 10 Gbps Ethernet should be no more than
0.28 * UI and this equates to a 27.1516 ps, p-p for the overall allowable transmit jitter.
The jitter contributing elements are made up of the reference clock, generated potentially from a device like
LMK61PD0A2, the transmit medium, transmit driver etc. Only a portion of the overall allowable transmit jitter is
allocated to the reference clock, typically 20% or lower. Therefore, the allowable reference clock jitter, for a 20%
clock jitter budget, is 5.43 ps, p-p.
Jitter in a reference clock is made up of deterministic jitter (arising from spurious signals due to supply noise or
mixing from other outputs or from the reference input) and random jitter (usually due to thermal noise and other
uncorrelated noise sources). A typical clock tree in a serial link system consists of clock generators and fanout
buffers. The allowable reference clock jitter of 5.43 ps, p-p is needed at the output of the fanout buffer. Modern
fanout buffers have low additive random jitter (less than 100 fs, rms) with no substantial contribution to the
deterministic jitter. Therefore, the clock generator and fanout buffer contribute to the random jitter while the
primary contributor to the deterministic jitter is the clock generator. Rule of thumb, for modern clock generators, is
to allocate 25% of allowable reference clock jitter to the deterministic jitter and 75% to the random jitter. This
amounts to an allowable deterministic jitter of 1.36 ps, p-p and an allowable random jitter of 4.07 ps, p-p. For
serial link systems that need to meet a bit error rate (BER) of 10-12, the allowable random jitter in root-meansquare is 0.29 ps, rms. This is calculated by dividing the p-p jitter by 14 for a BER of 10-12. Accounting for
random jitter from the fanout buffer, the random jitter needed from the clock generator is 0.27 ps, rms. This is
calculated by the root-mean-square subtraction from the desired jitter at the fanout buffer's output assuming 100
fs, rms of additive jitter from the fanout buffer.
With careful frequency planning techniques, like spur optimization (covered in the Spur Mitigation Techniques
section) and on-chip LDOs to suppress supply noise, the LMK61PD0A2 is able to generate clock outputs with
deterministic jitter that is below 1 ps, p-p and random jitter that is below 0.2 ps, rms. This gives the serial link
system with additional margin on the allowable transmit jitter resulting in a BER better than 10-12.
14
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Typical Application (continued)
TX
Parallel
Data
RX
Serializer
Parallel
Data
Sampler
Serialized clock/data
Recovered
Clock
TX PLL
CDR
Deserializer
Ref Clk
HRXCDR(f)
F1 = TX_PLL_BWmax
Jitter Transfer (on clock)
HRXCDR(f)
Jitter Tolerance (on data)
HTXPLL(f)
Jitter Transfer (on clock)
F2 = RX_CDR_BWmin
F2 = RX_CDR_BWmin
H(f)
Jitter Tolerance (on data)
F2
SoC trend:
Increase stop band
Less % of jitter budget
H(f)
Jitter Transfer (on clock)
F2
F1
SoC trend:
Decrease stop band
Improved LO design
Figure 15. Dependence of Clock Jitter in Serial Links
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11 Power Supply Recommendations
For best electrical performance of LMK61PD0A2, it is preferred to utilize a combination of 10 uF, 1 uF and 0.1 uF
on its power supply bypass network. It is also recommended to utilize component side mounting of the power
supply bypass capacitors and it is best to use 0201 or 0402 body size capacitors to facilitate signal routing. Keep
the connections between the bypass capacitors and the power supply on the device as short as possible. Ground
the other side of the capacitor using a low impedance connection to the ground plane. Figure 16 shows the
layout recommendation for power supply decoupling of LMK61PD0A2.
16
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12 Layout
12.1 Layout Guidelines
The following sections provides recommendations for board layout, solder reflow profile and power supply
bypassing when using LMK61PD0A2 to ensure good thermal / electrical performance and overall signal integrity
of entire system.
12.1.1 Ensuring Thermal Reliability
The LMK61PD0A2 is a high performance device. Therefore careful attention must be paid to device configuration
and printed circuit board (PCB) layout with respect to power consumption. The ground pin needs to be connected
to the ground plane of the PCB through three vias or more, as shown in Figure 16, to maximize thermal
dissipation out of the package.
Equation 1 describes the relationship between the PCB temperature around the LMK61PD0A2 and its junction
temperature.
TB = TJ – ΨJB * P
where
•
•
•
•
TB: PCB temperature around the LMK61PD0A2
TJ: Junction temperature of LMK61PD0A2
ΨJB: Junction-to-board thermal resistance parameter of LMK61PD0A2 (36.7°C/W without airflow)
P: On-chip power dissipation of LMK61PD0A2
(1)
In order to ensure that the maximum junction temperature of LMK61PD0A2 is below 125°C, it can be calculated
that the maximum PCB temperature without airflow should be at 100°C or below when the device is optimized for
best performance resulting in maximum on-chip power dissipation of 0.68 W.
12.1.2 Best Practices for Signal Integrity
For best electrical performance and signal integrity of entire system with LMK61PD0A2, it is recommended to
route vias into decoupling capacitors and then into the LMK61PD0A2. It is also recommended to increase the via
count and width of the traces wherever possible. These steps ensure lowest impedance and shortest path for
high frequency current flow. Figure 16 shows the layout recommendation for LMK61PD0A2.
Figure 16. LMK61PD0A2 Layout Recommendation for Power Supply and Ground
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Layout Guidelines (continued)
12.1.3 Recommended Solder Reflow Profile
It is recommended to follow the solder paste supplier's recommendations to optimize flux activity and to achieve
proper melting temperatures of the alloy within the guidelines of J-STD-20. It is preferrable for the LMK61PD0A2
to be processed with the lowest peak temperature possible while also remaining below the components peak
temperature rating as listed on the MSL label. The exact temperature profile would depend on several factors
including maximum peak temperature for the component as rated on the MSL label, Board thickness, PCB
material type, PCB geometries, component locations, sizes, densities within PCB, as well solder manufactures
recommended profile, and capability of the reflow equipment to as confirmed by the SMT assembly operation.
18
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13 Device and Documentation Support
13.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.2 Trademarks
E2E is a trademark of Texas Instruments.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMK61PD0A2-SIAR
ACTIVE
QFM
SIA
8
2500
RoHS & Green
NIAU
Level-3-260C-168 HR
-40 to 85
LMK61
PD0A2
LMK61PD0A2-SIAT
ACTIVE
QFM
SIA
8
250
RoHS & Green
NIAU
Level-3-260C-168 HR
-40 to 85
LMK61
PD0A2
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of