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LMV358, LMV321, LMV324, LMV324S
SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
LMV3xx Low-Voltage Rail-to-Rail Output Operational Amplifiers
1 Features
3 Description
•
•
•
•
•
The LMV321, LMV358, LMV324, and LMV324S
devices are single, dual, and quad low-voltage
(2.7 V to 5.5 V) operational amplifiers with rail-to-rail
output swing. These devices are the most costeffective solutions for applications where low-voltage
operation, space saving, and low cost are needed.
These amplifiers are designed specifically for lowvoltage (2.7 V to 5 V) operation, with performance
specifications meeting or exceeding the LM358 and
LM324 devices that operate from 5 V to 30 V. With
package sizes down to one-half the size of the
DBV (SOT-23) package, these devices can be used
for a variety of applications.
1
•
•
2.7-V and 5-V Performance
–40°C to 125°C Operation
Low-Power Shutdown Mode (LMV324S)
No Crossover Distortion
Low Supply Current
– LMV321: 130 μA Typ
– LMV358: 210 μA Typ
– LMV324: 410 μA Typ
– LMV324S: 410 μA Typ
Rail-to-Rail Output Swing
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model
– 1000-V Charged-Device Model
Device Information(1)
PART NUMBER
LMV324
2 Applications
•
•
•
•
•
•
•
•
•
LMV321
Desktop PCs
HVAC: Heating, Ventilating, and Air Conditioning
Motor Control: AC Induction
Netbooks
Portable Media Players
Power: Telecom DC/DC Module: Digital
Pro Audio Mixers
Refrigerators
Washing Machines: High-End and Low-End
LMV358
PACKAGE (PIN)
BODY SIZE
SOIC (14)
8.65 mm × 3.91 mm
SOT-23 (5)
2.90 mm × 1.60 mm
SC-70 (5)
2.00 mm × 1.25 mm
VSSOP (8)
2.30 mm × 2.00 mm
VSSOP (8)
3.00 mm × 3.00 mm
TSSOP (8)
3.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
4 Simplified Schematic
–
IN–
OUT
+
IN+
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMV358, LMV321, LMV324, LMV324S
SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8
1
1
1
1
2
3
4
Absolute Maximum Ratings ..................................... 4
Handling Ratings....................................................... 4
Recommended Operating Conditions ...................... 4
Thermal Information .................................................. 4
Electrical Characteristics: VCC+ = 2.7 V.................... 5
Electrical Characteristics: VCC+ = 5 V....................... 6
Shutdown Characteristics, LMV324S: VCC+ = 2.7 V 7
Shutdown Characteristics, LMV324S: VCC+ = 5 V ... 7
Typical Characteristics .............................................. 8
Detailed Description ............................................ 16
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
16
16
17
17
Application and Implementation ........................ 18
9.1 Typical Application ................................................. 18
10 Power Supply Recommendations ..................... 21
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
5 Revision History
Changes from Revision V (December 2013) to Revision W
•
Page
Added Applications, Handling Rating table, Thermal Information Table, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1
Changes from Revision U (July 2012) to Revision V
Page
•
Updated document to new TI data sheet format. ................................................................................................................... 1
•
Removed Ordering Information table. .................................................................................................................................... 3
•
Added ESD warning. ............................................................................................................................................................ 23
2
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Copyright © 1999–2014, Texas Instruments Incorporated
Product Folder Links: LMV358 LMV321 LMV324 LMV324S
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SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
6 Pin Configuration and Functions
LMV358 . . . D (SOIC), DDU (VSSOP),
DGK (VSSOP), OR PW (TSSOP) PACKAGE
(TOP VIEW)
1OUT
1IN–
1IN+
GND
1
8
2
7
3
6
4
5
VCC+
2OUT
2IN–
2IN+
LMV324 . . . D (SOIC) OR PW (TSSOP) PACKAGE
(TOP VIEW)
1OUT
1IN–
1IN+
VCC+
2IN+
2IN–
2OUT
1
14
2
13
3
12
4
11
5
10
6
9
7
8
LMV321 . . . DBV (SOT-23)
OR DCK (SC-70) PACKAGE
(TOP VIEW)
4OUT
4IN–
4IN+
GND
3IN+
3IN–
3OUT
1IN+
1
GND
2
1IN–
3
5
VCC+
4
OUT
LMV324S . . . D (SOIC) OR PW (TSSOP) PACKAGE
(TOP VIEW)
1OUT
1IN–
1IN+
VCC
2IN+
2IN–
2OUT
1/2 SHDN
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
4OUT
4IN–
4IN+
GND
3IN+
3IN–
3OUT
3/4 SHDN
Pin Functions
PIN
LMV358
LMV321
LMV324
LMV324S
D, DDU,
DGK, PW
DBV or DCK
D or PW
D or PW
3/4 SHDN
—
—
—
9
I
Shutdown (logic low)/enable (logic high)
1/2 SHDN
—
—
—
8
I
Shutdown (logic low)/enable (logic high)
1IN+
3
1
3
3
I
Noninverting input
1IN–
2
3
2
2
I
Inverting input
2IN+
5
—
5
5
I
Noninverting input
2IN–
6
—
6
6
I
Inverting input
2OUT
7
—
7
7
O
Output
3IN+
—
—
10
12
I
Noninverting input
3IN–
—
—
9
11
I
Inverting input
3OUT
—
—
8
10
O
Output
4IN+
—
—
12
14
I
Noninverting input
4IN–
—
—
13
15
I
Inverting input
4OUT
—
—
14
16
O
Output
GND
4
2
11
13
-
Negative supply
OUT
1
4
1
1
O
OUT
VCC+
8
5
4
4
-
Positive supply
NAME
Copyright © 1999–2014, Texas Instruments Incorporated
TYPE
DESCRIPTION
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SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
(3)
VID
Differential input voltage
VI
Input voltage range (either input)
–0.2
Duration of output short circuit (one amplifier) to ground (4)
TJ
(1)
(2)
(3)
(4)
MAX
Supply voltage (2)
VCC
At or below TA = 25°C,
VCC ≤ 5.5 V
UNIT
5.5
V
±5.5
V
5.7
V
Unlimited
Operating virtual junction temperature
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values (except differential voltages and VCC specified for the measurement of IOS) are with respect to the network GND.
Differential voltages are at IN+ with respect to IN–.
Short circuits from outputs to VCC can cause excessive heating and eventual destruction.
7.2 Handling Ratings
Tstg
Storage temperature range
V(ESD)
(1)
(2)
Electrostatic discharge
MIN
MAX
UNIT
°C
–65
150
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins (1)
0
2500
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins (2)
0
1500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions (1)
VCC
Supply voltage (single-supply operation)
VIH
Amplifier turn-on voltage level (LMV324S) (2)
VIL
Amplifier turn-off voltage level (LMV324S)
TA
(1)
(2)
Operating free-air temperature
MIN
MAX
2.7
5.5
VCC = 2.7 V
1.7
VCC = 5 V
3.5
UNIT
V
V
VCC = 2.7 V
0.7
VCC = 5 V
1.5
I temperature (LMV321,
LMV358, LMV324,
LMV321IDCK)
–40
125
I temperature (LMV324S)
-40
85
Q temperature
–40
125
V
°C
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
VIH should not be allowed to exceed VCC.
7.4 Thermal Information
LMV3xx
THERMAL METRIC (1)
RθJA
(1)
4
D
Junction-to-ambient thermal resistance
DBV
DCK
DDU
DGK
8 PIN
14 PIN
16 PIN
5 PIN
5 PIN
8 PIN
8 PIN
8 PIN
14 PIN
PW
16 PIN
UNIT
97
86
73
206
252
210
172
149
113
108
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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Copyright © 1999–2014, Texas Instruments Incorporated
Product Folder Links: LMV358 LMV321 LMV324 LMV324S
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SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
7.5 Electrical Characteristics: VCC+ = 2.7 V
VCC+ = 2.7 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
1.7
7
UNIT
VIO
Input offset voltage
αVIO
Average temperature coefficient of
input offset voltage
IIB
Input bias current
IIO
Input offset current
CMRR
Common-mode rejection ratio
VCM = 0 to 1.7 V
50
63
dB
kSVR
Supply-voltage rejection ratio
VCC = 2.7 V to 5 V, VO = 1 V
50
60
dB
VICR
Common-mode input voltage
range
CMRR ≥ 50 dB
0
–0.2
VO
Output swing
RL = 10 kΩ to 1.35 V
Supply current
11
250
nA
5
50
nA
1.9
VCC – 100
Low level
LMV321I
ICC
μV/°C
5
High level
V
1.7
VCC – 10
60
180
80
170
LMV358I (both amplifiers)
140
340
LMV324I and LMV324SI
(all four amplifiers)
260
680
mV
μA
B1
Unity-gain bandwidth
Φm
Phase margin
Gm
Gain margin
10
dB
Vn
Equivalent input noise voltage
f = 1 kHz
46
nV/√Hz
In
Equivalent input noise current
f = 1 kHz
0.17
pA/√Hz
(1)
CL = 200 pF
mV
1
MHz
60
deg
Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
Copyright © 1999–2014, Texas Instruments Incorporated
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7.6 Electrical Characteristics: VCC+ = 5 V
VCC+ = 5 V, at specified free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
(1)
MIN
25°C
TYP (2)
MAX
1.7
7
UNIT
VIO
Input offset voltage
αVIO
Average temperature
coefficient of input offset
voltage
IIB
Input bias current
IIO
Input offset current
CMRR
Common-mode rejection
ratio
VCM = 0 to 4 V
25°C
50
65
dB
kSVR
Supply-voltage
rejection ratio
VCC = 2.7 V to 5 V, VO = 1 V,
VCM = 1 V
25°C
50
60
dB
VICR
Common-mode input
voltage range
CMRR ≥ 50 dB
25°C
0
–0.2
Full range
Output swing
High level
RL = 10 kΩ to 2.5 V
Low level
IOS
Output short-circuit
current
RL = 2 kΩ
Sourcing, VO = 0 V
Sinking, VO = 5 V
LMV321I
ICC
Supply current
LMV358I (both amplifiers)
LMV324I and LMV324SI
(all four amplifiers)
B1
Unity-gain bandwidth
Φm
Gm
Vn
Equivalent input
noise voltage
In
Equivalent input
noise current
SR
Slew rate
(1)
(2)
6
25°C
15
5
CL = 200 pF
250
50
150
4.2
25°C
VCC – 300
Full range
VCC – 400
25°C
4
Full range
Full range
VCC – 200
25°C
nA
V
300
400
VCC – 100
nA
VCC – 40
120
25°C
mV
μV/°C
500
25°C
Low level
Large-signal differential
voltage gain
5
Full range
RL = 2 kΩ to 2.5 V
AVD
25°C
Full range
High level
VO
9
VCC – 10
65
Full range
mV
180
280
25°C
15
Full range
10
25°C
25°C
100
5
60
10
160
130
Full range
V/mV
mA
250
350
25°C
210
Full range
440
615
25°C
410
Full range
μA
830
1160
25°C
1
MHz
Phase margin
25°C
60
deg
Gain margin
25°C
10
dB
f = 1 kHz
25°C
39
nV/√Hz
f = 1 kHz
25°C
0.21
pA/√Hz
25°C
1
V/μs
Full range TA = –40°C to 125°C for I temperature(LMV321, LMV358, LMV324, LMV321IDCK), –40°C to 85°C for (LMV324S) and –40°C
to 125°C for Q temperature.
Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
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SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
7.7 Shutdown Characteristics, LMV324S: VCC+ = 2.7 V
VCC+ = 2.7 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
ICC(SHDN)
Supply current in shutdown mode
(per channel)
SHDN ≤ 0.6 V
t(on)
Amplifier turn-on time
AV = 1, RL = Open (measured at 50% point)
2
μs
t(off)
Amplifier turn-off time
AV = 1, RL = Open (measured at 50% point)
40
ns
(1)
5
μA
Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
7.8 Shutdown Characteristics, LMV324S: VCC+ = 5 V
VCC+ = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
UNIT
ICC(SHDN)
Supply current in shutdown mode
(per channel)
SHDN ≤ 0.6 V, TA = Full Temperature Range
t(on)
Amplifier turn-on time
AV = 1, RL = Open (measured at 50% point)
2
μs
t(off)
Amplifier turn-off time
AV = 1, RL = Open (measured at 50% point)
40
ns
(1)
5
μA
Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
Copyright © 1999–2014, Texas Instruments Incorporated
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7.9 Typical Characteristics
Vs = 2.7 V
RL = 100 kΩ, 2 kΩ, 600 Ω
70
Phase
60
Gain − dB
40
100 kΩ
Gain
70
90
60
75
60
2 kΩ
30
105
45
20
30
600 Ω
10
100 kΩ
−10
1k
10 k
600 Ω
Phase
75
2 kΩ
40
100 k
Frequency − Hz
30
45
Gain
20
10
15
1M
0
0
−15
10 M
−10
1k
70
10 k
70
100
Phase
0 pF
80
−20
−20
Vs = 5.0 V
RL = 600 Ω
CL = 0 pF
100 pF
500 pF
1000 pF
−30
10 k
−40
100 pF
500 pF
0 pF
−60
1000 pF
−80
−100
10 M
100 k
1M
Frequency − Hz
Gain − dB
Gain − dB
Gain
40
40
30
0
10
−20
Vs = 5.0 V
0 pF
RL = 100 kΩ
100 pF
−10 CL = 0 pF
100 pF
500 pF
−20
500 pF
1000 pF
1000 pF
−30
10 k
100 k
1M
Frequency − Hz
60
Gain − dB
25°C
60
40
−40°C
30
45
Gain
20
85°C
25°C
0
−10
1k
30
−40°C
10 k
100 k
1M
Frequency − Hz
Figure 5. LMV321 Frequency Response
vs Temperature
8
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RL
CL
−2.5 V
1000
LMV3xx
(25% Overshoot)
100
VCC = ±2.5 V
AV = +1
RL = 2 kΩ
VO = 100 mVPP
0
−15
10 M
VO
+
VI
15
10
_
90
75
−100
10 M
2.5 V
LMV324S
(25% Overshoot)
Phase Margin − Deg
Phase
50
−80
10000
105
85°C
−60
Figure 4. LMV321 Frequency Response
vs Capacitive Load
Capacitive Load − pF
70
−40
0
120
Vs = 5.0 V
RL = 2 kΩ
20
20
Figure 3. LMV321 Frequency Response
vs Capacitive Load
80
500 pF
Gain
Phase Margin − Deg
0
20
−10
20
Phase Margin − Deg
500 pF
60
100 pF
1000 pF
40
1000 pF
0 pF
50
100 pF
40
80
60
60
50
0
−15
10 M
100 k
1M
Frequency − Hz
Figure 2. LMV321 Frequency Response
vs Resistive Load
100
60
0
600 Ω
Phase
10
30
100 kΩ
Figure 1. LMV321 Frequency Response
vs Resistive Load
30
60
100 kΩ
2 kΩ
2 kΩ
0
105
90
50
15
120
Vs = 5.0 V
RL = 100 kΩ, 2 kΩ, 600 Ω
Phase Margin − Deg
600 Ω
80
Phase Margin − Deg
50
120
Gain − dB
80
10
−2
−1.5
−1
−0.5
0
0.5
1
1.5
Output Voltage − V
Figure 6. Stability
vs Capacitive Load
Copyright © 1999–2014, Texas Instruments Incorporated
Product Folder Links: LMV358 LMV321 LMV324 LMV324S
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SLOS263W – AUGUST 1999 – REVISED OCTOBER 2014
Typical Characteristics (continued)
10000
10000
VCC = ±2.5 V
RL = 2 kΩ
AV = 10
VO = 100 mVPP
2.5 V
_
1000
VO
+
RL
CL
Capacitive Load − nF
Capacitive Load − pF
VI
2.5 V
LMV324S
(25% Overshoot)
100
10
−2.0
−1.5
1000
LMV3xx
(25% Overshoot)
100
134 kΩ
−1
−0.5
0
Output Voltage − V
0.5
1
1.21 MΩ
+2.5 V
VCC = ±2.5 V
AV = +1
RL = 1 MΩ
VO = 100 mVPP
LMV3xx
(25% Overshoot)
_
10
−2.0
1.5
−1.5
−1
−0.5
0
Output Voltage − V
1
1.5
Figure 8. Stability
vs Capacitive Load
RL = 100 kΩ
1.400
LMV3xx
(25% Overshoot)
1.300
Slew Rate − V/ms
Capacitive Load − nF
0.5
1.500
VCC = ±2.5 V
RL = 1 MΩ
AV = 10
VO = 100 mVPP
1000
LMV324S
(25% Overshoot)
134 kΩ
1.21 MΩ
VI
CL
RL
−1
1.000
LMV3xx
PSLEW
0.900
−0.5
0
NSLEW
LMV324S
0.600
−2.5 V
−1.5
NSLEW
1.100
0.700
VO
+
Gain
1.200
0.800
+2.5 V
_
0.5
1
0.500
2.5
1.5
PSLEW
3.0
3.5
4.0
4.5
5.0
V CC − Supply Voltage − V
Output Voltage − V
Figure 10. Slew Rate
vs Supply Voltage
Figure 9. Stability
vs Capacitive Load
−10
700
VCC = 5 V
VI = VCC/2
LMV3xx
600
LMV324S
−20
TA = 85°C
500
Input Current − nA
Supply Current − µA
CL
RL
−2.5 V
10000
10
−2.0
VO
+
VI
Figure 7. Stability
vs Capacitive Load
100
LMV324S
(25% Overshoot)
TA = 25°C
400
300
TA = −40°C
−30
LMV3xx
−40
200
−50
LMV324S
100
0
0
1
2
3
4
5
6
−60
−40 −30 −20 −10 0 10 20 30 40 50 60 70 80
TA − °C
VCC − Supply Voltage − V
Figure 11. Supply Current
vs Supply Voltage - Quad Amplifier
Copyright © 1999–2014, Texas Instruments Incorporated
Figure 12. Input Current
vs Temperature
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Typical Characteristics (continued)
100
100
VCC = 2.7 V
VCC = 5 V
10
Sourcing Current − mA
Sourcing Current − mA
10
LMV3xx
1
LMV324S
0.1
LMV3xx
1
LMV324S
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
0.001
0.001
10
Figure 13. Source Current
vs Output Voltage
10
LMV324S
Sinking Current − mA
LMV324S
1
LMV3xx
0.1
1
LMV324
0.1
0.01
0.01
0.01
0.1
1
10
0.001
0.001
Output Voltage Referenced to GND − V
0.01
0.1
120
LMV324S
VCC = 5 V
270
LMV3xx
VCC = 5 V
180
150
120
90
LMV324S
VCC = 2.7 V
LMV3xx
VCC = 2.7 V
Sourcing Current − mA
Sinking Current − mA
100
LMV324S
VCC = 5 V
80
LMV3xx
VCC = 5 V
60
LMV3xx
VCC = 2.7 V
40
LMV324S
VCC = 2.7 V
20
30
0
−40 −30 −20 −10 0
0
10 20 30 40 50 60 70 80 90
TA − °C
Figure 17. Short-Circuit Current
vs Temperature
10
10
Figure 16. Sinking Current
vs Output Voltage
300
60
1
Output Voltage Referenced to GND − V
Figure 15. Sinking Current
vs Output Voltage
210
10
VCC = 5 V
10
240
1
100
VCC = 2.7 V
Sinking Current − mA
0.1
Figure 14. Source Current
vs Output Voltage
100
0.001
0.001
0.01
Output Voltage Referenced to VCC+ − V
Output Voltage Referenced to VCC+ − V
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−40 −30 −20−10 0
10 20 30 40 50 60 70 80 90
TA − °C
Figure 18. Short-Circuit Current
vs Temperature
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Typical Characteristics (continued)
80
90
LMV324S
VCC = −5 V
RL = 10 kΩ
70
VCC = 5 V
RL = 10 kΩ
70
60
LMV3xx
LMV3xx
60
50
+k SVR − dB
−k SVR − dB
LMV324S
80
40
30
50
40
30
20
20
10
10
0
0
100
1k
10k
100k
1M
1k
Figure 20. +kSVR
vs Frequency
80
VCC = −2.7 V
RL = 10 kΩ
LMV324S
70
60
1M
VCC = 2.7 V
RL = 10 kΩ
60
LMV3xx
+k SVR − dB
50
40
30
50
30
20
10
10
100
1k
10k
100k
0
100
1M
LMV3xx
40
20
0
1k
10k
Frequency − Hz
Figure 21. –kSVR
vs Frequency
Figure 22. +kSVR
vs Frequency
6
60
Peak Output Voltage − V OPP
5
LMV3xx
LMV324S
Negative Swing
40
30
20
Positive Swing
1M
RL = 10 kΩ
THD > 5%
AV = 3
RL = 10 kΩ
50
100k
Frequency − Hz
70
Output Voltage Swing − mV
100k
Figure 19. –kSVR
vs Frequency
LMV324S
70
10k
Frequency − Hz
80
−kSVR − dB
100
Frequency − Hz
LMV3xx
VCC = 5 V
4
LMV324S
VCC = 5 V
3
LMV3xx
VCC = 2.7 V
2
LMV324S
VCC = 2.7 V
1
10
0
2.5
3.0
3.5
4.0
4.5
5.0
VCC − Supply Voltage − V
Figure 23. Output Voltage Swing From Rails
vs Supply Voltage
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0
1k
10k
100k
1M
10M
Frequency − Hz
Figure 24. Output Voltage
vs Frequency
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Typical Characteristics (continued)
150
110
LMV3xx
VCC = 5 V
Impedance − Ω
90
80
70
LMV324S
VCC = 2.7 V
60
50
LMV324S
VCC = 5 V
40
VCC = 5 V
RL = 5 kΩ
AV = 1
VO = 3 VPP
140
Crosstalk Rejection − dB
100
LMV3xx
VCC = 2.7 V
130
120
110
100
30
20
1
1M
2M
3M
90
100
4M
Frequency − Hz
1k
10k
Frequency − Hz
Figure 25. Open-Loop Output Impedence
vs Frequency
Figure 26. Cross-Talk Rejection
vs Frequency
Input
LMV3xx
LMV3xx
1 V/Div
1 V/Div
Input
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 25°C
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 85°C
1 µs/Div
Figure 28. Noninverting Large-Signal Pulse Response
1 µs/Div
Figure 27. Noninverting Large-Signal Pulse Response
Input
Input
LMV3xx
LMV3xx
50 mV/Div
1 V/Div
100k
LMV324S
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 25°C
VCC = ±2.5 V
RL = 2 kΩ
TA = −40°C
1 µs/Div
Figure 29. Noninverting Large-Signal Pulse Response
12
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1 µs/Div
Figure 30. Noninverting Small-Signal Pulse Response
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Typical Characteristics (continued)
Input
Input
50 mV/Div
50 mV/Div
LMV3xx
LMV3xx
LMV324S
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 85°C
VCC = ±2.5 V
RL = 2 kΩ
TA = −40°C
1 µs/Div
Figure 32. Noninverting Small-Signal Pulse Response
1 µs/Div
Figure 31. Noninverting Small-Signal Pulse Response
Input
Input
LMV3xx
1 V/Div
1 V/Div
LMV3xx
LMV324S
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 25°C
VCC = ±2.5 V
RL = 2 kΩ
TA = 85°C
1 µs/Div
Figure 33. Inverting Large-Signal Pulse Response
1 µs/Div
Figure 34. Inverting Large-Signal Pulse Response
Input
Input
LMV3xx
1 V/Div
50 mV/Div
LMV3xx
LMV324S
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = 25°C
VCC = ±2.5 V
RL = 2 kΩ
TA = −40°C
1 µs/Div
Figure 35. Inverting Large-Signal Pulse Response
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1 µs/Div
Figure 36. Inverting Small-Signal Pulse Response
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Input
Input
LMV3xx
LMV3xx
50 mV/Div
50 mV/Div
Typical Characteristics (continued)
LMV324S
LMV324S
VCC = ±2.5 V
RL = 2 kΩ
TA = −40°C
VCC = ±2.5 V
RL = 2 kΩ
TA = 85°C
1 µs/Div
1 µs/Div
Figure 37. Inverting Small-Signal Pulse Response
Figure 38. Inverting Small-Signal Pulse Response
0.50
0.80
0.60
0.40
0.20
VCC = 5 V
0.45
Input Current Noise − pA/ Hz
Input Current Noise − pA/ Hz
VCC = 2.7 V
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.00
10
100
1k
10
10k
100
10k
Figure 40. Input Current Noise
vs Frequency
Figure 39. Input Current Noise
vs Frequency
200
10.000
180
160
1.000
VCC = 2.7 V
RL = 10 kΩ
AV = 1
VO = 1 VPP
140
120
THD − %
Input Voltage Noise − nV/ Hz
1k
Frequency − Hz
Frequency − Hz
100
LMV3xx
0.100
80
VCC = 2.7 V
60
0.010
LMV324S
40
VCC = 5 V
0.001
20
10
100
1k
10k
10
100
Figure 41. Input Voltage Noise
vs Frequency
14
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1000
10000
100000
Frequency − Hz
Frequency − Hz
Figure 42. THD + N
vs Frequency
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Typical Characteristics (continued)
10.000
10.000
VCC = 2.7 V
RL = 10 kΩ
AV = 10
VO = 1 VPP
1.000
1.000
VCC = 5 V
RL = 10 kΩ
AV = 1
VO = 1 VPP
THD − %
THD − %
LMV324S
0.100
LMV3xx
0.100
LMV324S
0.010
0.010
LMV3xx
0.001
0.001
10
100
1000
10000
10
100000
1000
100
Frequency − Hz
10000
100000
Frequency − Hz
Figure 43. THD + N
vs Frequency
Figure 44. THD + N
vs Frequency
10.000
VCC = 5 V
RL = 10 kΩ
AV = 10
VO = 2.5 VPP
1.000
THD − %
LMV324S
0.100
0.010
LMV3xx
0.001
10
100
1000
10000
100000
Frequency − Hz
Figure 45. THD + N
vs Frequency
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8 Detailed Description
8.1 Overview
The LMV321, LMV358, LMV324, and LMV324S devices are single, dual, and quad low-voltage (2.7 V to 5.5 V)
operational amplifiers with rail-to-rail output swing. The LMV324S device, which is a variation of the standard
LMV324 device, includes a power-saving shutdown feature that reduces supply current when the amplifiers are
not needed. Channels 1 and 2 together are put in shutdown, as are channels 3 and 4. While in shutdown, the
outputs actively are pulled low.
The LMV321, LMV358, LMV324, and LMV324S devices are the most cost-effective solutions for applications
where low-voltage operation, space saving, and low cost are needed. These amplifiers are designed specifically
for low-voltage (2.7 V to 5 V) operation, with performance specifications meeting or exceeding the LM358 and
LM324 devices that operate from 5 V to 30 V. Additional features of the LMV3xx devices are a common-mode
input voltage range that includes ground, 1-MHz unity-gain bandwidth, and 1-V/μs slew rate.
The LMV321 device is available in the ultra-small package, which is approximately one-half the size of the DBV
(SOT-23) package. This package saves space on printed circuit boards and enables the design of small portable
electronic devices. It also allows the designer to place the device closer to the signal source to reduce noise
pickup and increase signal integrity.
8.2 Functional Block Diagram
VCC
VBIAS1
VCC
+
–
VBIAS2
+
Output
–
VCC VCC
VBIAS3
+
IN-
VBIAS4–
IN+
+
–
16
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8.3 Feature Description
8.3.1 Operating Voltage
The LMV321, LMV358, LMV324, LMV324S devices are fully specified and ensured for operation from
2.7 V to 5 V. In addition, many specifications apply from –40°C to 125°C. Parameters that vary significantly with
operating voltages or temperature are shown in the Typical Characteristics graphs.
8.3.2 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. The LMV321, LMV358, LMV324, LMV324S devices have a 1-MHz unity-gain
bandwidth.
8.3.3 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. The LMV321, LMV358, LMV324, LMV324S devices have a 1-V/μs slew rate.
8.4 Device Functional Modes
The LMV321, LMV358, LMV324, LMV324S devices are powered on when the supply is connected. The
LMV324S device, which is a variation of the standard LMV324 device, includes a power-saving shutdown feature
that reduces supply current to a maximum of 5 μA per channel when the amplifiers are not needed. Each of
these devices can be operated as a single supply operational amplifier or dual supply amplifier depending on the
application.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Typical Application
Some applications require differential signals. Figure 46 shows a simple circuit to convert a single-ended input of
0.5 to 2 V into differential output of ±1.5 V on a single 2.7-V supply. The output range is intentionally limited to
maximize linearity. The circuit is composed of two amplifiers. One amplifier acts as a buffer and creates a
voltage, VOUT+. The second amplifier inverts the input and adds a reference voltage to generate VOUT–. Both
VOUT+ and VOUT– range from 0.5 to 2 V. The difference, VDIFF, is the difference between VOUT+ and VOUT–. The
LMV358 was used to build this circuit.
R2
2.7 V
R1
VOUT+
+
R3
VREF
2.5 V
R4
VDIFF
±
VOUT+
+
VIN
Figure 46. Schematic for Single-Ended Input to Differential Output Conversion
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Typical Application (continued)
9.1.1 Design Requirements
The design requirements are as follows:
• Supply voltage: 2.7 V
• Reference voltage: 2.5 V
• Input: 0.5 to 2 V
• Output differential: ±1.5 V
9.1.2 Detailed Design Procedure
The circuit in Figure 46 takes a single-ended input signal, VIN, and generates two output signals, VOUT+ and
VOUT– using two amplifiers and a reference voltage, VREF. VOUT+ is the output of the first amplifier and is a
buffered version of the input signal, VIN (see Equation 1). VOUT– is the output of the second amplifier which uses
VREF to add an offset voltage to VIN and feedback to add inverting gain. The transfer function for VOUT– is
Equation 2.
VOUT+ = VIN
(1)
æ R 44 ö æ R22 ö
R2
VOUT
- VINin ´ 2
out - = VREF
ref ´ ç
÷ ´ ç1 +
÷
+ R 44 ø è
R11 ø
R11
è R33+
(2)
The differential output signal, VDIFF, is the difference between the two single-ended output signals, VOUT+ and
VOUT–. Equation 3 shows the transfer function for VDIFF. By applying the conditions that R1 = R2 and R3 = R4, the
transfer function is simplified into Equation 6. Using this configuration, the maximum input signal is equal to the
reference voltage and the maximum output of each amplifier is equal to the VREF. The differential output range is
2×VREF. Furthermore, the common mode voltage will be one half of VREF (see Equation 7).
æ
öæ
æ
R ö
R4
R2 ö
VD IF F = V O U T + - V O U T - = VIN ´ ç 1 + 2 ÷ - VR E F ´ ç
÷ ç1 +
÷
R1 ø
R1 ø
è
è R3 + R4 ø è
VOUT+ = VIN
VOUT– = VREF – VIN
VDIFF = 2×VIN – VREF
(3)
(4)
(5)
(6)
+ VOUT - ö 1
æV
Vcm = ç OUT +
÷ = VREF
2
è
ø 2
(7)
9.1.2.1 Amplifier Selection
Linearity over the input range is key for good dc accuracy. The common mode input range and the output swing
limitations determine the linearity. In general, an amplifier with rail-to-rail input and output swing is required.
Bandwidth is a key concern for this design. Because LMV358 has a bandwidth of 1 MHz, this circuit will only be
able to process signals with frequencies of less than 1 MHz.
9.1.2.2 Passive Component Selection
Because the transfer function of VOUT– is heavily reliant on resistors (R1, R2, R3, and R4), use resistors with low
tolerances to maximize performance and minimize error. This design used resistors with resistance values of
36 kΩ with tolerances measured to be within 2%. If the noise of the system is a key parameter, the user can
select smaller resistance values (6 kΩ or lower) to keep the overall system noise low. This ensures that the noise
from the resistors is lower than the amplifier noise.
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Typical Application (continued)
9.1.3 Application Curves
The measured transfer functions in Figure 47, Figure 48, and Figure 49 were generated by sweeping the input
voltage from 0 V to 2.5 V. However, this design should only be used between 0.5 V and 2 V for optimum
linearity.
2.5
2.5
2.0
1.5
2.0
VOUT+ (V)
VDIFF (V)
1.0
0.5
0.0
±0.5
1.5
1.0
±1.0
0.5
±1.5
±2.0
0.0
±2.5
0.0
0.5
1.0
1.5
2.0
0.0
2.5
VIN (V)
0.5
1.0
1.5
VIN (V)
C003
Figure 47. Differential Output Voltage vs Input Voltage
2.0
2.5
C001
Figure 48. Positive Output Voltage Node vs Input Voltage
3.0
2.5
VOUTt (V)
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
VIN (V)
2.0
2.5
C002
Figure 49. Positive Output Voltage Node vs Input Voltage
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10 Power Supply Recommendations
The LMV321, LMV358, LMV324, LMV324S devices are specified for operation from 2.7 to 5 V; many
specifications apply from –40°C to 125°C. The Typical Characteristics section presents parameters that can
exhibit significant variance with regard to operating voltage or temperature.
CAUTION
Supply voltages larger than 5.5 V can permanently damage the device (see the
Absolute Maximum Ratings ).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high
impedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout.
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11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single
supply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current. For more detailed information, refer to
Circuit Board Layout Techniques, (SLOA089).
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Example.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
VIN
RIN
RG
+
VOUT
RF
Figure 50. Operational Amplifier Schematic for Noninverting Configuration
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
VS+
RF
OUT1
VCC+
GND
IN1í
OUT2
VIN
IN1+
IN2í
VCCí
IN2+
RG
GND
RIN
Use low-ESR, ceramic
bypass capacitor
Only needed for
dual-supply
operation
GND
VS(or GND for single supply)
Ground (GND) plane on another layer
Figure 51. Operational Amplifier Board Layout for Noninverting Configuration
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12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMV321
Click here
Click here
Click here
Click here
Click here
LMV358
Click here
Click here
Click here
Click here
Click here
LMV324
Click here
Click here
Click here
Click here
Click here
LMV324S
Click here
Click here
Click here
Click here
Click here
12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.
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PACKAGE OPTION ADDENDUM
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24-Aug-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV321IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC1F, RC1K)
LMV321IDBVRE4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC1F, RC1K)
LMV321IDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC1F, RC1K)
LMV321IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC1F, RC1K)
LMV321IDBVTE4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC1F, RC1K)
LMV321IDCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(R3F, R3K, R3O, R3
R, R3Z)
LMV321IDCKRG4
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R3F, R3K, R3O, R3
R, R3Z)
LMV321IDCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(R3C, R3F, R3R)
LMV324ID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324I
LMV324IDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
LMV324I
LMV324IDRE4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324I
LMV324IDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324I
LMV324IPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
MV324I
LMV324IPWRE4
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV324I
LMV324IPWRG4
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV324I
LMV324QD
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324Q
LMV324QDG4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324Q
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV324QDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324Q
LMV324QDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV324Q
LMV324QPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV324Q
LMV324QPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV324Q
LMV324QPWRE4
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV324Q
LMV358ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IDDUR
ACTIVE
VSSOP
DDU
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RA5R
LMV358IDDURG4
ACTIVE
VSSOP
DDU
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RA5R
LMV358IDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R5B, R5Q, R5R)
LMV358IDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R5B, R5Q, R5R)
LMV358IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IPW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IPWG4
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358IPWRE4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV358IPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358I
LMV358QD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358Q
LMV358QDDUR
ACTIVE
VSSOP
DDU
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RAHR
LMV358QDDURG4
ACTIVE
VSSOP
DDU
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RAHR
LMV358QDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358Q
LMV358QDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RHO, RHR)
LMV358QDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RHO, RHR)
LMV358QDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358Q
LMV358QPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV358Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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