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OPA171, OPA2171, OPA4171
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
OPAx171 36-V, Single-Supply, SOT-553, General-Purpose Operational Amplifiers
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
•
The OPA171, OPA2171, and OPA4171 (OPAx171)
are a family of 36-V, single-supply, low-noise
operational amplifiers with the ability to operate on
supplies ranging from 2.7 V (±1.35 V) to 36 V (±18
V). These devices are available in micro-packages
and offer low offset, drift, and bandwidth with low
quiescent current. The single, dual, and quad
versions all have identical specifications for maximum
design flexibility.
1
•
Supply range: 2.7 to 36 V, ±1.35 V to ±18 V
Low noise: 14 nV/√Hz
Low offset drift: ±0.3 µV/°C (typical)
RFI filtered inputs
Input range includes the negative supply
Input range operates to positive supply
Rail-to-rail output
Gain bandwidth: 3 MHz
Low quiescent current: 475 µA per amplifier
High common-mode rejection: 120 dB (typical)
Low-input bias current: 8 pA
Industry-standard packages:
– 8-pin SOIC
– 8-pin MSOP
– 14-pin TSSOP
Micro packages:
– Single in SOT-553
– Dual in VSSOP-8
2 Applications
•
•
•
•
•
•
•
•
•
Unlike most operational amplifiers, which are
specified at only one supply voltage, the OPAx171
family is specified from 2.7 to 36 V. Input signals
beyond the supply rails do not cause phase reversal.
The OPAx171 family is stable with capacitive loads
up to 300 pF. The input can operate 100 mV below
the negative rail and within 2 V of the top rail during
normal operation. These devices can operate with full
rail-to-rail input 100 mV beyond the top rail, but with
reduced performance within 2 V of the top rail.
The OPAx171 series of operational amplifiers are
specified from –40°C to +125°C.
Device Information(1)
PART NUMBER
Tracking amplifier in power modules
Merchant power supplies
Transducer amplifiers
Bridge amplifiers
Temperature measurements
Strain gauge amplifiers
Precision integrators
Battery-powered instruments
Test equipment
SPACE
1.60 mm × 2.90 mm
OPA2171
SOIC (8)
3.90 mm × 4.90 mm
TSSOP (14)
4.40 mm × 5.00 mm
SOIC (14)
3.90 mm × 8.65 mm
OPA4171
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Offset Voltage vs Power Supply
350
10 Typical Units Shown
800
BODY SIZE (NOM)
SOT-23 (5)
Offset Voltage vs Common-Mode Voltage
1000
PACKAGE
OPA171
VSUPPLY = ±2.25 V to ±18 V
10 Typical Units Shown
250
600
150
200
VOS (µV)
VOS (µV)
400
0
-200
-400
50
-50
-150
-600
-250
-800
VCM = -18.1 V
-350
-1000
-20
-15
-10
-5
0
VCM (V)
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
VSUPPLY (V)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA171, OPA2171, OPA4171
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
7
1
1
1
2
4
7
Absolute Maximum Ratings ...................................... 7
ESD Ratings.............................................................. 7
Recommended Operating Conditions....................... 7
Thermal Information: OPA171 .................................. 8
Thermal Information: OPA2171 ................................ 8
Thermal Information: OPA4171 ................................ 8
Electrical Characteristics........................................... 9
Typical Characteristics ............................................ 12
Detailed Description ............................................ 18
7.1 Overview ................................................................. 18
7.2 Functional Block Diagram ....................................... 18
7.3 Feature Description................................................. 18
7.4 Device Functional Modes........................................ 20
8
Application and Implementation ........................ 21
8.1 Application Information............................................ 21
8.2 Typical Application ................................................. 23
9 Power Supply Recommendations...................... 27
10 Layout................................................................... 27
10.1 Layout Guidelines ................................................ 27
10.2 Layout Example .................................................... 27
11 Device and Documentation Support ................. 28
11.1
11.2
11.3
11.4
11.5
Related Links ........................................................
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
28
28
28
28
28
12 Mechanical, Packaging, and Orderable
Information ........................................................... 28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (April 2018) to Revision G
Page
•
Added links to Applications .................................................................................................................................................... 1
•
Changed graphs with incorrect units (mV to µV) in the Typical Characteristics section...................................................... 12
Changes from Revision E (April 2015) to Revision F
Page
•
Changed minimum supply voltage value from ±20 V to 0 V in Absolute Maximum Ratings table ....................................... 7
•
Added maximum supply voltage value of 40 V to Absolute Maximum Ratings table ........................................................... 7
•
Rewrote Electrical Overstress subsection content in Application Information section ........................................................ 21
Changes from Revision D (September 2012) to Revision E
Page
•
Changed device title (removed "Value Line Series").............................................................................................................. 1
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
Changes from Revision C (June 2011) to Revision D
•
Page
Added "Value Line Series" to title........................................................................................................................................... 1
Changes from Revision B (November 2010) to Revision C
Page
•
Added MSOP-8 package to device graphic ........................................................................................................................... 1
•
Added MSOP-8 package to Features bullets ......................................................................................................................... 1
•
Added MSOP-8 package to Product Family table.................................................................................................................. 1
•
Updated pinout configurations for OPA2171 and OPA4171 .................................................................................................. 4
•
Added MSOP-8 package to OPA2171 Thermal Information table ......................................................................................... 8
2
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Copyright © 2010–2020, Texas Instruments Incorporated
Product Folder Links: OPA171 OPA2171 OPA4171
OPA171, OPA2171, OPA4171
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
•
Added new row for Voltage Output Swing from Rail parameter to Output subsection of Electrical Characteristics............ 10
•
Changed Voltage Output Swing from Rail parameter to over temperature in Output subsection of Electrical
Characteristics ...................................................................................................................................................................... 10
•
Changed Figure 9................................................................................................................................................................. 12
Changes from Revision A (November, 2010) to Revision B
Page
•
Changed input offset voltage specification ............................................................................................................................. 9
•
Changed input offset voltage, over temperature specification ............................................................................................... 9
•
Changed quiescent current per amplifier, over temperature specification ........................................................................... 10
Copyright © 2010–2020, Texas Instruments Incorporated
Product Folder Links: OPA171 OPA2171 OPA4171
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OPA171, OPA2171, OPA4171
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
www.ti.com
5 Pin Configuration and Functions
OPA171 DRL Package
5-Pin SOT-553
Top View
IN+
1
V-
2
IN-
3
5
V+
4
OUT
OPA171 DBV Package
5-Pin SOT-23
Top View
OUT
1
V-
2
+IN
3
5
V+
4
-IN
OPA171 D Package
8-Pin SOIC
Top View
(1)
NC(1)
1
8
NC(1)
-IN
2
7
V+
+IN
3
6
OUT
V-
4
5
NC(1)
NC - no internal connection
Pin Functions: OPA171
PIN
NAME
I/O
DESCRIPTION
DRL
DBV
D
+IN
1
3
3
I
Noninverting input
–IN
3
4
2
I
Inverting input
OUT
4
1
6
O
Output
V+
5
5
7
—
Positive (highest) supply
V–
2
2
4
—
Negative (lowest) supply
NC
—
—
1, 5, 8
—
No internal connection (can be left floating)
4
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Product Folder Links: OPA171 OPA2171 OPA4171
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
OPA2171 D, DCU, and DCK Packages
8-Pin SO, VSSOP and MSOP
Top View
OUT A
1
8
V+
-IN A
2
7
OUT B
+IN A
3
6
-IN B
V-
4
5
+IN B
Pin Functions: OPA2171
PIN
I/O
DESCRIPTION
NAME
NO.
+IN A
3
I
Noninverting input
+IN B
5
I
Noninverting input
–IN A
2
I
Inverting input
–IN B
6
O
Inverting input
OUT A
1
O
Output
OUT B
7
—
Output
V+
8
—
Positive (highest) supply
V–
4
—
Negative (lowest) supply
Copyright © 2010–2020, Texas Instruments Incorporated
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
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OPA4171 D and PW Packages
14-Pin SO and TSSOP
Top View
OUT A
1
14
OUT D
-IN A
2
13
-IN D
+IN A
3
12
+IN D
V+
4
11
V-
+IN B
5
10
+IN C
-IN B
6
9
-IN C
OUT B
7
8
OUT C
Pin Functions: OPA4171
PIN
I/O
DESCRIPTION
NAME
NO.
+IN A
3
I
Noninverting input
+IN B
5
I
Noninverting input
+IN C
10
I
Noninverting input
+IN D
12
I
Noninverting input
–IN A
2
I
Inverting input
–IN B
6
I
Inverting input
–IN C
9
I
Inverting input
–IN D
13
I
Inverting input
OUT A
1
O
Output
OUT B
7
O
Output
OUT C
8
O
Output
OUT D
14
O
Output
V+
4
—
Positive (highest) supply
V–
11
—
Negative (lowest) supply
6
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Product Folder Links: OPA171 OPA2171 OPA4171
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range, (unless otherwise noted)
(1)
MIN
MAX
UNIT
0
40
V
Voltage
(V–) – 0.5
(V+) + 0.5
V
Current
–10
10
mA
Supply voltage
Signal input terminals
Output short circuit (2)
Continuous
Operating temperature
–55
Junction temperature
Storage temperature
(1)
(2)
–65
150
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Short-circuit to ground, one amplifier per package.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
UNIT
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±750
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage (V+ – V–)
Specified temperature
NOM
MAX
UNIT
4.5 (±2.25)
36 (±18)
V
–40
125
°C
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OPA171, OPA2171, OPA4171
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
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6.4 Thermal Information: OPA171
OPA171
THERMAL METRIC (1)
D (SO)
DBV (SOT-23)
DRL (SOT-553)
8 PINS
5 PINS
5 PINS
UNIT
208.1
°C/W
RθJA
Junction-to-ambient thermal resistance
149.5
245.8
RθJC(top)
Junction-to-case(top) thermal resistance
97.9
133.9
0.1
°C/W
RθJB
Junction-to-board thermal resistance
87.7
83.6
42.4
°C/W
ψJT
Junction-to-top characterization parameter
35.5
18.2
0.5
°C/W
ψJB
Junction-to-board characterization parameter
89.5
83.1
42.2
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Thermal Information: OPA2171
OPA2171
THERMAL METRIC (1)
D (SO)
DGK (MSOP)
DCU (VSSOP)
8 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
134.3
175.2
195.3
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
72.1
74.9
59.4
°C/W
RθJB
Junction-to-board thermal resistance
60.6
22.2
115.1
°C/W
ψJT
Junction-to-top characterization parameter
18.2
1.6
4.7
°C/W
ψJB
Junction-to-board characterization parameter
53.8
22.8
114.4
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
N/A
N/A
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report .
6.6 Thermal Information: OPA4171
OPA4171
THERMAL METRIC
(1)
D (SOIC)
PW (TSSOP)
14 PINS
14 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
93.2
106.9
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
51.8
24.4
°C/W
RθJB
Junction-to-board thermal resistance
49.4
59.3
°C/W
ψJT
Junction-to-top characterization parameter
13.5
0.6
°C/W
ψJB
Junction-to-board characterization parameter
42.2
54.3
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
N/A
N/A
°C/W
(1)
8
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
6.7 Electrical Characteristics
at TA = 25°C, VS = 2.7 to 36 V, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
mV
OFFSET VOLTAGE
VOS
Input offset voltage
dVOS/dT
0.25
±1.8
Over temperature
TA = –40°C to +125°C
0.3
±2
mV
Drift
TA = –40°C to +125°C
0.3
±2
µV/°C
vs power supply
VS = 4 to 36 V
TA = –40°C to +125°C
1
±3
µV/V
Channel separation, DC
DC
5
µV/V
INPUT BIAS CURRENT
Input bias current
IB
±8
Over temperature
TA = –40°C to +125°C
Input offset current
IOS
±15
pA
±3.5
nA
±4
Over temperature
TA = –40°C to +125°C
Input voltage noise
f = 0.1 Hz to 10 Hz
pA
±3.5
nA
NOISE
en
Input voltage noise density
3
µVPP
f = 100 Hz
25
nV/√Hz
f = 1 kHz
14
nV/√Hz
INPUT VOLTAGE
(V–) – 0.1
V
Common-mode voltage range (1)
VCM
CMRR
Common-mode rejection ratio
(V+) – 2 V
V
VS = ±2 V
(V–) – 0.1 V < VCM < (V+) – 2 V
TA = –40°C to +125°C
90
104
dB
VS = ±18 V
(V–) – 0.1 V < VCM < (V+) – 2 V
TA = –40°C to +125°C
104
120
dB
INPUT IMPEDANCE
Differential
Common-mode
100 || 3
MΩ || pF
6 || 3
1012Ω ||
pF
130
dB
OPEN-LOOP GAIN
AOL
VS = 4 V to 36 V
(V–) + 0.35 V < VO < (V+) – 0.35 V
TA = –40°C to +125°C
Open-loop voltage gain
110
FREQUENCY RESPONSE
GBP
Gain bandwidth product
SR
Slew rate
tS
G=1
Settling time
THD+N
3
MHz
1.5
V/µs
To 0.1%
VS = ±18 V, G = 1
10-V step
6
µs
To 0.01% (12 bit)
VS = ±18 V, G = 1
10-V step
10
µs
2
µs
Overload recovery time
VIN × gain > VS
Total harmonic distortion + noise
G = 1, f = 1 kHz
VO = 3 VRMS
0.0002%
OUTPUT
(1)
The input range can be extended beyond (V+) – 2 V up to V+. See Typical Characteristics and Application and Implementation for
additional information.
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Electrical Characteristics (continued)
at TA = 25°C, VS = 2.7 to 36 V, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Voltage output swing from rail
VS = 5 V
RL = 10 kΩ
Over temperature
RL = 10 kΩ
AOL ≥ 110 dB
TA = –40°C to +125°C
VO
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
MIN
TYP
MAX
30
(V–) +
0.35
mV
(V+) –
0.35
+25/–35
V
mA
See Typical Characteristics
f = 1 MHz
IO = 0 A
UNIT
pF
150
Ω
POWER SUPPLY
VS
IQ
Specified voltage range
2.7
Quiescent current per amplifier
IO = 0 A
Over temperature
IO = 0 A
TA = –40°C to +125°C
475
36
V
595
µA
650
µA
TEMPERATURE
10
Specified range
–40
125
°C
Operating range
–55
150
°C
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SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
Table 1. Characteristic Performance Measurements
DESCRIPTION
FIGURE
Offset Voltage Production Distribution
Figure 1
Offset Voltage Drift Distribution
Figure 2
Offset Voltage vs Temperature
Figure 3
Offset Voltage vs Common-Mode Voltage
Figure 4
Offset Voltage vs Common-Mode Voltage (Upper Stage)
Figure 5
Offset Voltage vs Power Supply
Figure 6
IB and IOS vs Common-Mode Voltage
Figure 7
Input Bias Current vs Temperature
Figure 8
Output Voltage Swing vs Output Current (Maximum Supply)
Figure 9
CMRR and PSRR vs Frequency (Referred-to Input)
Figure 10
CMRR vs Temperature
Figure 11
PSRR vs Temperature
Figure 12
0.1-Hz to 10-Hz Noise
Figure 13
Input Voltage Noise Spectral Density vs Frequency
Figure 14
THD+N Ratio vs Frequency
Figure 15
THD+N vs Output Amplitude
Figure 16
Quiescent Current vs Temperature
Figure 17
Quiescent Current vs Supply Voltage
Figure 18
Open-Loop Gain and Phase vs Frequency
Figure 19
Closed-Loop Gain vs Frequency
Figure 20
Open-Loop Gain vs Temperature
Figure 21
Open-Loop Output Impedance vs Frequency
Small-Signal Overshoot vs Capacitive Load (100-mV Output Step)
Figure 22
Figure 23, Figure 24
No Phase Reversal
Figure 25
Positive Overload Recovery
Figure 26
Negative Overload Recovery
Figure 27
Small-Signal Step Response (100 mV)
Figure 28, Figure 29
Large-Signal Step Response
Figure 30, Figure 31
Large-Signal Settling Time (10-V Positive Step)
Figure 32
Large-Signal Settling Time (10-V Negative Step)
Figure 33
Short-Circuit Current vs Temperature
Figure 34
Maximum Output Voltage vs Frequency
Figure 35
Channel Separation vs Frequency
Figure 36
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6.8 Typical Characteristics
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
25
Distribution Taken From 3500 Amplifiers
Distribution Taken From 110 Amplifiers
14
Percentage of Amplifiers (%)
Percentage of Amplifiers (%)
16
12
10
8
6
4
2
0
20
15
10
5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-1200
-1100
-1000
-900
-800
-700
-600
-500
-400
-300
-200
-100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
Offset Voltage Drift (mV/°C)
Offset Voltage (mV)
Figure 2. Offset Voltage Drift Distribution
Figure 1. Offset Voltage Production Distribution
1000
600
5 Typical Units Shown
10 Typical Units Shown
800
400
400
VOS (µV)
Offset Voltage (mV)
600
200
0
-200
200
0
-200
-400
-400
-600
-600
-800
-800
VCM = -18.1 V
-1000
-75
-50
-25
0
25
50
75
100
125
-20
150
-15
-10
-5
0
10
15
20
Figure 4. Offset Voltage vs Common-Mode Voltage
Figure 3. Offset Voltage vs Temperature
10000
5
VCM (V)
Temperature (°C)
350
10 Typical Units Shown
8000
VSUPPLY = ±2.25 V to ±18 V
10 Typical Units Shown
250
6000
150
2000
VOS (µV)
VOS (µV)
4000
0
-2000
-4000
Normal
Operation
-250
-8000
-10000
15.5
-50
-150
VCM = 18.1 V
-6000
50
-350
16
16.5
17
17.5
18
18.5
0
2
4
Figure 5. Offset Voltage vs Common-Mode Voltage (Upper
Stage)
12
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6
8
10
12
14
16
18
20
VSUPPLY (V)
VCM (V)
Figure 6. Offset Voltage vs Power Supply
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Typical Characteristics (continued)
10000
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
IB+
-IB
IB-
+IB
-IOS
VCM = -18.1V
1000
Input Bias Current (pA)
IB and IOS (pA)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
IB
IOS
100
10
IOS
1
VCM = 16V
0
-20
-18
-12
0
-6
6
12
18
-40
20
-25
0
25
100
125
140
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
18
17
Output Voltage (V)
75
Figure 8. Input Bias Current vs Temperature
Figure 7. IB and IOS vs Common-Mode Voltage
16
15
14.5
-14.5
-15
-40°C
+25°C
+85°C
+125°C
-16
-17
120
100
80
60
40
+PSRR
-PSRR
CMRR
20
0
-18
0
2
4
6
8
10
12
14
1
16
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Output Current (mA)
Figure 9. Output Voltage Swing vs Output Current
(Maximum Supply)
Figure 10. CMRR and PSRR vs Frequency (Referred-to
Input)
30
3
Power-Supply Rejection Ratio (mV/V)
Common-Mode Rejection Ratio (mV/V)
50
Temperature (°C)
VCM (V)
20
10
0
-10
VS = 2.7V
-20
VS = 4V
VS = 36V
-30
2
1
0
-1
-2
VS = 2.7V to 36V
VS = 4V to 36V
-3
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
Temperature (°C)
Temperature (°C)
Figure 11. CMRR vs Temperature
Figure 12. PSRR vs Temperature
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Typical Characteristics (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
1mV/div
Voltage Noise Density (nV/ÖHz)
1000
100
10
1
Time (1s/div)
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 13. 0.1-Hz to 10-Hz Noise
-120
0.0001
G = +1, RL = 10kW
G = -1, RL = 2kW
0.00001
10
100
1k
10k
-140
20k
Total Harmonic Distortion + Noise (%)
Total Harmonic Distortion + Noise (%)
-100
0.001
0.1
BW = 80kHz
-80
0.01
-100
0.001
-120
0.0001
G = +1, RL = 10kW
G = -1, RL = 2kW
0.00001
0.01
Total Harmonic Distortion + Noise (dB)
-80
VOUT = 3VRMS
BW = 80kHz
Total Harmonic Distortion + Noise (dB)
0.01
Figure 14. Input Voltage Noise Spectral Density vs
Frequency
-140
0.1
1
10
20
Output Amplitude (VRMS)
Frequency (Hz)
Figure 15. THD+N Ratio vs Frequency
Figure 16. THD+N vs Output Amplitude
0.6
0.65
0.55
0.6
0.5
IQ (mA)
IQ (mA)
0.55
0.5
0.45
0.45
0.4
0.35
0.4
0.3
0.35
0.25
Specified Supply-Voltage Range
-75
-50
-25
0
25
50
75
100
125
150
0
4
8
Figure 17. Quiescent Current vs Temperature
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12
16
20
24
28
32
36
Supply Voltage (V)
Temperature (°C)
Figure 18. Quiescent Current vs Supply Voltage
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Typical Characteristics (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
180
180
25
Gain
20
135
135
15
Phase
45
45
Gain (dB)
90
Phase (°)
Gain (dB)
10
90
5
0
-5
-10
0
0
G = 10
G=1
G = -1
-15
-45
10M
-45
1
10
100
1k
10k
100k
1M
-20
10k
100k
1M
Figure 19. Open-Loop Gain and Phase vs Frequency
3
100M
Figure 20. Closed-Loop Gain vs Frequency
1M
5 Typical Units Shown
VS = 2.7 V
VS = 4 V
VS = 36 V
2.5
100k
10k
2
ZO (W)
AOL (mV/V)
10M
Frequency (Hz)
Frequency (Hz)
1.5
1k
100
1
10
0.5
1
0
1m
-40
-25
0
25
50
75
100
125
1
10
100
Temperature (°C)
45
45
ROUT = 0 W
40
40
ROUT = 25 W
35
35
ROUT = 50 W
30
25
20
ROUT = 0 Ω
10
ROUT = 25 Ω
5
ROUT = 50 Ω
10k
100k
1M
10M
Figure 22. Open-Loop Output Impedance vs Frequency
50
G=1
18 V
Overshoot (%)
Overshoot (%)
Figure 21. Open-Loop Gain vs Temperature
50
15
1k
Frequency (Hz)
30
25
20
RI = 10 kW
15
ROUT
-18 V
RF = 10 kW
G = -1
18 V
TLV171-Q1
RL
CL
10
ROUT
TLV171-Q1
CL
5
-18 V
0
0
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Capacitive Load (pF)
Figure 23. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
Figure 24. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
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Typical Characteristics (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
18 V
Output
VOUT
TLV171-Q1
VIN
5V/div
5V/div
-18 V
37 VPP
Sine Wave
(±18.5 V)
20kW
+18V
2kW
OPA171
Output
VOUT
VIN
-18V
G = -10
Time (5ms/div)
Time (100ms/div)
Figure 25. No Phase Reversal
Figure 26. Positive Overload Recovery
RL = 10kW
CL = 100pF
+18V
RL
CL
20mV/div
-18V
VIN
5V/div
G = +1
OPA171
20kW
+18V
2kW
OPA171
VOUT
VIN
VOUT
-18V
G = -10
Time (1ms/div)
Time (5ms/div)
Figure 27. Negative Overload Recovery
Figure 28. Small-Signal Step Response (100 mV)
RI
= 2kW
RF
2V/div
20mV/div
CL = 100pF
= 2kW
+18V
OPA171
CL
-18V
G = -1
Time (5ms/div)
Time (20ms/div)
Figure 29. Small-Signal Step Response (100 mV)
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Figure 30. Large-Signal Step Response
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Typical Characteristics (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)
10
2V/div
D From Final Value (mV)
8
6
4
12-Bit Settling
2
0
-2
(±1/2LSB = ±0.024%)
-4
-6
-8
-10
Time (4ms/div)
0
4
8
12
16
20
24
28
32
36
Time (ms)
Figure 32. Large-Signal Settling Time (10-V Positive Step)
10
50
8
45
6
40
4
35
12-Bit Settling
2
ISC (mA)
D From Final Value (mV)
Figure 31. Large-Signal Step Response
0
-2
(±1/2LSB = ±0.024%)
25
20
-4
15
-6
10
-8
5
-10
ISC, Sink
30
ISC, Source
0
0
4
8
12
16
20
24
28
32
36
-40
-25
0
Time (ms)
25
50
75
100
125
Temperature (°C)
Figure 33. Large-Signal Settling Time (10-V Negative Step)
Figure 34. Short-Circuit Current vs Temperature
15
-60
VS = ±15 V
10
Channel Separation (dB)
Output Voltage (VPP)
12.5
Maximum output voltage without
slew-rate induced distortion.
7.5
VS = ±5 V
5
2.5
-70
-80
-90
-100
-110
0
-120
10k
100k
1M
10M
10
100
Frequency (Hz)
Figure 35. Maximum Output Voltage vs Frequency
1k
10k
100k
Frequency (Hz)
Figure 36. Channel Separation vs Frequency
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7 Detailed Description
7.1 Overview
The OPAx171 operational amplifiers provide high overall performance, and are designed for many generalpurpose applications. The excellent offset drift of only 2 µV/°C provides excellent stability over the entire
temperature range. In addition, the series offers good overall performance with high CMRR, PSRR, and AOL. As
with all amplifiers, applications with noisy or high-impedance power supplies require decoupling capacitors close
to the device pins. In most cases, 0.1-µF capacitors are adequate.
7.2 Functional Block Diagram
OPA171
PCH
FF Stage
Ca
Cb
+IN
PCH
Input Stage
Output
Stage
2nd Stage
OUT
-IN
NCH
Input Stage
7.3 Feature Description
7.3.1 Operating Characteristics
The OPAx171 family of amplifiers is specified for operation from 2.7 to 36 V (±1.35 to ±18 V). Many of the
specifications apply from –40°C to +125°C. Parameters that can exhibit significant variance with regard to
operating voltage or temperature are presented in Typical Characteristics.
7.3.2 Common-Mode Voltage Range
The input common-mode voltage range of the OPAx171 series extends 100 mV below the negative rail and
within 2 V of the top rail for normal operation.
This family can operate with full rail-to-rail input 100 mV beyond the top rail, but with reduced performance within
2 V of the top rail. The typical performance in this range is summarized in Table 2.
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Feature Description (continued)
7.3.3 Phase-Reversal Protection
The OPAx171 family has an internal phase-reversal protection. Many operational amplifiers exhibit a phase
reversal when the input is driven beyond its linear common-mode range. This condition is most often
encountered in noninverting circuits when the input is driven beyond the specified common-mode voltage range,
causing the output to reverse into the opposite rail. The input of the OPAx171 prevents phase reversal with
excessive common-mode voltage. Instead, the output limits into the appropriate rail. This performance is shown
in Figure 37.
18 V
Output
TLV171-Q1
5V/div
-18 V
37 VPP
Sine Wave
(±18.5 V)
Output
Time (100ms/div)
Figure 37. No Phase Reversal
Table 2. Typical Performance Range
PARAMETER
MIN
Input common-mode voltage
TYP
(V+) – 2
MAX
(V+) + 0.1
UNIT
V
Offset voltage
7
mV
vs temperature
12
µV/°C
Common-mode rejection
65
dB
Open-loop gain
60
dB
GBW
0.7
MHz
Slew rate
0.7
V/µs
Noise at f = 1 kHz
30
nV/√Hz
7.3.4 Capacitive Load and Stability
The dynamic characteristics of the OPAx171-Q1 family of devices have been optimized for commonly
encountered operating conditions. The combination of low closed-loop gain and high capacitive loads decreases
the phase margin of the amplifier and can lead to gain peaking or oscillations. As a result, heavier capacitive
loads must be isolated from the output. The simplest way to achieve this isolation is to add a small resistor (for
example, ROUT equal to 50 Ω) in series with the output. Figure 38 and Figure 39 show small-signal overshoot
versus capacitive load for several values of ROUT. For details of analysis techniques and application circuits, see
Applications Bulletin AB-028, available for download from TI.com.
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50
50
45
45
ROUT = 0 W
40
40
ROUT = 25 W
35
35
ROUT = 50 W
30
25
20
10
ROUT = 25 Ω
5
ROUT = 50 Ω
G=1
18 V
ROUT = 0 Ω
15
Overshoot (%)
Overshoot (%)
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
30
25
20
RI = 10 kW
15
ROUT
-18 V
RF = 10 kW
G = -1
18 V
TLV171-Q1
RL
CL
10
ROUT
TLV171-Q1
CL
5
-18 V
0
0
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Capacitive Load (pF)
Figure 38. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
Figure 39. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
7.4 Device Functional Modes
7.4.1 Common-Mode Voltage Range
The input common-mode voltage range of the OPAx171 family extends 100 mV below the negative rail and
within 2 V of the top rail for normal operation.
These devices can operate with full rail-to-rail input 100 mV beyond the top rail, but with reduced performance
within 2 V of the top rail. The typical performance in this range is summarized in Table 2.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The OPAx171 operational amplifiers provide high overall performance, and are designed for many generalpurpose applications. The excellent offset drift of only 2 µV/°C provides excellent stability over the entire
temperature range. In addition, the series offers good overall performance with high CMRR, PSRR, and AOL. As
with all amplifiers, applications with noisy or high-impedance power supplies require decoupling capacitors close
to the device pins. In most cases, 0.1-µF capacitors are adequate.
8.1.1 Electrical Overstress
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits for protection from
accidental ESD events both before and during product assembly.
A good understanding of this basic ESD circuitry and the relevance to an electrical overstress event is helpful.
Figure 40 shows the ESD circuits contained in the OPAx171 (indicated by the dashed line area). The ESD
protection circuitry involves several current-steering diodes connected from the input and output pins and routed
back to the internal power supply lines, where the diodes meet at an absorption device internal to the operational
amplifier. This protection circuitry is intended to remain inactive during normal circuit operation.
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Application Information (continued)
TVS
+
±
RF
+VS
R1
IN±
RS
IN+
2.5 NŸ
2.5 NŸ
+
Power-Supply
ESD Cell
ID
VIN
+
±
RL
+
±
±VS
TVS
Figure 40. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration, highcurrent pulse when discharging through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent damage. The energy absorbed by the
protection circuitry is then dissipated as heat.
When an ESD voltage develops across two or more amplifier device pins, current flows through one or more
steering diodes. Depending on the path that the current takes, the absorption device can activate. The absorption
device contains a trigger (or threshold voltage) that is above the normal operating voltage of the OPAx171 but
below the device breakdown level. When this threshold is exceeded, the absorption device quickly activates and
clamps the voltage across the supply rails to a safe level.
When the operational amplifier connects into a circuit (as shown in Figure 40), the ESD protection components
are intended to remain inactive and do not become involved in the application circuit operation. However,
circumstances may arise when an applied voltage exceeds the operating voltage of a given pin. If this condition
occurs, there is a risk that some internal ESD protection circuits can turn on and conduct current. Any such
current flow occurs through steering-diode paths and rarely involves the absorption device.
Figure 40 shows a specific example where the input voltage (VIN) exceeds the positive supply voltage (V+) by
500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If V+ can sink the
current, one of the upper steering diodes conducts and directs current to V+. Excessively high current levels can
flow with increasingly higher VIN. As a result, the data sheet specifications recommend that applications limit the
input current to 10 mA.
If the supply is not capable of sinking the current, VIN begins sourcing current to the operational amplifier and
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to
levels that exceed the operational amplifier absolute maximum ratings.
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Application Information (continued)
Another common question involves what happens to the amplifier if an input signal is applied to the input when
the power supplies (V+ or V–) are at 0 V. This question depends on the supply characteristic when at 0 V, or at a
level below the input signal amplitude. If the supplies appear to be high-impedance, then the input source
supplies the operational amplifier current through the current-steering diodes. This state is not a normal bias
condition. Most likely, the amplifier does not operate normally. If the supplies are low-impedance, then the
current through the steering diodes can be quite high. The current level depends on the ability of the input source
to deliver current and any resistance in the input path.
If there is any uncertainty about the ability of the supply to absorb this current, add external Zener diodes to the
supply pins; see Figure 40. Select the Zener voltage so that the diode does not turn on during normal operation.
However, the Zener voltage must be low enough so that the Zener diode conducts if the supply pin begins to rise
above the safe operating, supply-voltage level.
The OPAx171 input pins are protected from excessive differential voltage with back-to-back diodes; see
Figure 40. In most circuit applications, the input protection circuitry does not affect the application. However, in
low gain or G = 1 circuits, fast-ramping input signals can forward bias these diodes because the output of the
amplifier cannot respond rapidly enough to the input ramp. If the input signal is fast enough to create this
forward-bias condition, limit the input signal current to 10 mA or less. If the input signal current is not inherently
limited, an input series resistor can be used to limit the input signal current. This input series resistor degrades
the low noise performance of the OPAx171. Figure 40 shows an example configuration that implements a
current-limiting feedback resistor.
8.2 Typical Application
+VS
VOUT
RISO
+
VIN
+
±
CLOAD
VS
Figure 41. Unity-Gain Buffer With RISO Stability Compensation
8.2.1 Design Requirements
The design requirements are:
• Supply voltage: 30 V (±15 V)
• Capacitive loads: 100 pF, 1000 pF, 0.01 μF, 0.1 μF, and 1 μF
• Phase margin: 45° and 60°
8.2.2 Detailed Design Procedure
Figure 42 shows a unity-gain buffer driving a capacitive load. Equation 1 shows the transfer function for the
circuit in Figure 42. Not shown in Figure 42 is the open-loop output resistance of the operational amplifier, Ro.
1 + CLOAD × RISO × s
T(s) =
1 + Ro + RISO × CLOAD × s
(1)
The transfer function in Equation 1 contains a pole and a zero. The frequency of the pole (fp) is determined by
(Ro + RISO) and CLOAD. Components RISO and CLOAD determine the frequency of the zero (fz). Select RISO such
that the rate of closure (ROC) between the open-loop gain (AOL) and 1/β is 20 dB/decade to obtain a stable
system. Figure 42 shows the concept. The 1/β curve for a unity-gain buffer is 0 dB.
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Typical Application (continued)
120
AOL
100
1
fp
2 u Πu RISO
Gain (dB)
80
60
Ro
u CLOAD
40 dB
fz
40
1
2 u Πu RISO u CLOAD
1 dec
1/
20
ROC
20 dB
dec
0
10
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
Figure 42. Unity-Gain Amplifier With RISO Compensation
ROC stability analysis is typically simulated. The validity of the analysis depends on multiple factors, especially
the accurate modeling of Ro. In addition to simulating the ROC, a robust stability analysis includes a
measurement of overshoot percentage and AC gain peaking of the circuit using a function generator,
oscilloscope, and gain and phase analyzer. Phase margin is then calculated from these measurements. Table 3
shows the overshoot percentage and AC gain peaking that correspond to phase margins of 45° and 60°. For
more details on this design and other alternative devices that can be used in place of the OPAx171, see
Capacitive Load Drive Solution using an Isolation Resistor.
Table 3. Phase Margin versus Overshoot and AC Gain Peaking
PHASE MARGIN
OVERSHOOT
AC GAIN PEAKING
45°
23.3%
2.35 dB
60°
8.8%
0.28 dB
8.2.2.1 Capacitive Load and Stability
The dynamic characteristics of the OPAx171 are optimized for commonly encountered operating conditions. The
combination of low closed-loop gain and high capacitive loads decreases the phase margin of the amplifier and
can lead to gain peaking or oscillations. As a result, heavier capacitive loads must be isolated from the output.
The simplest way to achieve this isolation is to add a small resistor (for example, ROUT equal to 50 Ω) in series
with the output. Figure 38 and Figure 39 illustrate graphs of small-signal overshoot versus capacitive load for
several values of ROUT. See Applications Bulletin AB-028, available for download from the TI website for details
of analysis techniques and application circuits.
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50
50
45
45
ROUT = 0 W
40
40
ROUT = 25 W
35
35
ROUT = 50 W
30
25
20
10
ROUT = 25 Ω
5
ROUT = 50 Ω
G=1
18 V
ROUT = 0 Ω
15
Overshoot (%)
Overshoot (%)
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30
25
20
RI = 10 kW
15
ROUT
-18 V
RF = 10 kW
G = -1
18 V
TLV171-Q1
RL
CL
10
ROUT
TLV171-Q1
CL
5
-18 V
0
0
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Capacitive Load (pF)
Figure 43. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
Figure 44. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
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8.2.3 Application Curve
The OPAx171 meets the supply voltage requirements of 30 V. The OPAx171 is tested for various capacitive
loads and RISO is adjusted to get an overshoot corresponding to Table 3. The results of the these tests are
summarized in Figure 45.
10000
Isolation Resistor, RISO (:)
45q Phase Margin
60q Phase Margin
1000
100
10
1
0.01
0.1
1
10
Capacitive Load (nF)
100
1000
D001
Figure 45. RISO vs CLOAD
26
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Copyright © 2010–2020, Texas Instruments Incorporated
Product Folder Links: OPA171 OPA2171 OPA4171
OPA171, OPA2171, OPA4171
www.ti.com
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
9 Power Supply Recommendations
The OPAx171 family is specified for operation from 4.5 V to 36 V (±2.25 V to ±18 V); many specifications apply
from –40°C to +125°C. Parameters that can exhibit significant variance with regard to operating voltage or
temperature are presented in the Specifications section.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings table.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For detailed information on bypass capacitor placement, see the Layout Guidelines
section.
10 Layout
10.1 Layout Guidelines
For best operational performance of the devices, good printed circuit board (PCB) layout practices are
recommended. Low-loss, 0.1-µF bypass capacitors must be connected between each supply pin and ground,
placed as close to the devices as possible. A single bypass capacitor from V+ to ground is applicable to singlesupply applications.
10.2 Layout Example
Run the input traces
as far away from
the supply lines
as possible
Place components close
to device and to each
other to reduce parasitic
errors
RF
VS+
N/C
N/C
Use a low-ESR,
ceramic bypass
capacitor
RG
GND
–IN
V+
VIN
+IN
OUTPUT
V–
N/C
GND
GND
VS–
VOUT
Ground (GND) plane on another layer
Use low-ESR,
ceramic bypass
capacitor
Copyright © 2019, Texas Instruments Incorporated
Figure 46. Operational Amplifier Board Layout for Noninverting Configuration
Copyright © 2010–2020, Texas Instruments Incorporated
Product Folder Links: OPA171 OPA2171 OPA4171
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27
OPA171, OPA2171, OPA4171
SBOS516G – SEPTEMBER 2010 – REVISED MAY 2020
www.ti.com
11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 4. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
OPA171
Click here
Click here
Click here
Click here
Click here
OPA2171
Click here
Click here
Click here
Click here
Click here
OPA4171
Click here
Click here
Click here
Click here
Click here
11.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
28
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Copyright © 2010–2020, Texas Instruments Incorporated
Product Folder Links: OPA171 OPA2171 OPA4171
PACKAGE OPTION ADDENDUM
www.ti.com
14-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
OPA171AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O171A
OPA171AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OSUI
OPA171AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OSUI
OPA171AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
O171A
OPA171AIDRLR
ACTIVE
SOT-5X3
DRL
5
4000
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
DAP
OPA171AIDRLT
ACTIVE
SOT-5X3
DRL
5
250
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
DAP
OPA2171AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2171A
OPA2171AIDCUR
ACTIVE
VSSOP
DCU
8
3000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
OPOC
OPA2171AIDCUT
ACTIVE
VSSOP
DCU
8
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
OPOC
OPA2171AIDGK
ACTIVE
VSSOP
DGK
8
80
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
OPMI
OPA2171AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 125
OPMI
OPA2171AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2171A
OPA4171AID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 125
OPA4171
OPA4171AIDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 125
OPA4171
OPA4171AIPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4171
OPA4171AIPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4171
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
14-Feb-2020
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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