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REF2025, REF2030, REF2033, REF2041
SBOS600D – MAY 2014 – REVISED JULY 2018
REF20xx Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References
1 Features
3 Description
•
Applications with only a positive supply voltage often
require additional stable voltage in the middle of the
analog-to-digital converter (ADC) input range to bias
input bipolar signals. The REF20xx provides a
reference voltage (VREF) for the ADC and a second
highly-accurate voltage (VBIAS) that can be used to
bias the input bipolar signals.
1
•
•
•
•
•
•
•
•
•
•
Two Outputs, VREF and VREF / 2, for Convenient
Use in Single-Supply Systems
Excellent Temperature Drift Performance:
– 8 ppm/°C (max) from –40°C to 125°C
High Initial Accuracy: ±0.05% (max)
VREF and VBIAS Tracking over Temperature:
– 6 ppm/°C (max) from –40°C to 85°C
– 7 ppm/°C (max) from –40°C to 125°C
Microsize Package: SOT23-5
Low Dropout Voltage: 10 mV
High Output Current: ±20 mA
Low Quiescent Current: 360 μA
Line Regulation: 3 ppm/V
Load Regulation: 8 ppm/mA
Matte-Sn version (REF2025AISDDCR) for
improved corrosion resistance in the Battelle
Class III and similar harsh environments
2 Applications
•
•
•
•
•
•
Digital Signal Processing:
– Power Inverters
– Motor Controls
Current Sensing
Industrial Process Controls
Medical Equipment
Data Acquisition Systems
Single-Supply Systems
The REF20xx offers excellent temperature drift
(8 ppm/°C, max) and initial accuracy (0.05%) on both
the VREF and VBIAS outputs while operating at a
quiescent current less than 430 µA. In addition, the
VREF and VBIAS outputs track each other with a
precision of 6 ppm/°C (max) across the temperature
range of –40°C to 85°C. All these features increase
the precision of the signal chain and decrease board
space, while reducing the cost of the system as
compared to a discrete solution. Extremely low
dropout voltage of only 10 mV allows operation from
very low input voltages, which can be very useful in
battery-operated systems.
Both the VREF and VBIAS voltages have the same
excellent specifications and can sink and source
current equally well. Very good long-term stability and
low noise levels make these devices ideally-suited for
high-precision industrial applications.
Device Information(1)
PART NAME
REF20xx
PACKAGE
BODY SIZE (NOM)
SOT (5)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
space
space
Application Example
VREF and VBIAS vs Temperature
Power
Supply
0.05
VIN+
RSHUNT
INA213
ISENSE
VOUT
ADC
REF
VIN-
VBIAS
1.5 V
VREF
3.0 V
Output Voltage Accuracy (%)
LOAD
0.04
0.03
VBIAS
0.02
0.01
0
-0.01
-0.02
VREF
-0.03
-0.04
-0.05
±75
REF2030
GND
EN
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
C001
VIN
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
REF2025, REF2030, REF2033, REF2041
SBOS600D – MAY 2014 – REVISED JULY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics..........................................
Typical Characteristics ..............................................
Parameter Measurement Information ................ 13
8.1 Solder Heat Shift..................................................... 13
8.2 Thermal Hysteresis ................................................. 14
8.3 Noise Performance ................................................. 15
9
Detailed Description ............................................ 16
9.1 Overview ................................................................. 16
9.2 Functional Block Diagram ....................................... 16
9.3 Feature Description................................................. 16
9.4 Device Functional Modes........................................ 17
10 Applications and Implementation...................... 18
10.1 Application Information.......................................... 18
10.2 Typical Application ................................................ 19
11 Power-Supply Recommendations ..................... 24
12 Layout................................................................... 25
12.1 Layout Guidelines ................................................. 25
12.2 Layout Example .................................................... 25
13 Device and Documentation Support ................. 26
13.1
13.2
13.3
13.4
13.5
13.6
13.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
26
26
26
26
26
26
26
14 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (January 2017) to Revision D
•
Page
Changed application information to include corrosion resistance advantages. .................................................................. 18
Changes from Revision B (July 2014) to Revision C
Page
•
Added I/O column to Pin Functions table .............................................................................................................................. 3
•
Added Storage temperature parameter to Absolute Maximum Ratings table (moved from ESD Ratings table)................... 4
•
Changed ESD Rating table: changed title, updated table format .......................................................................................... 4
Changes from Revision A (June 2014) to Revision B
Page
•
Changed device status to Production Data from Mixed Status ............................................................................................. 1
•
Deleted footnote 2 from Device Information table ................................................................................................................. 1
•
Deleted footnote from Device Comparison Table ................................................................................................................. 3
•
Added Thermal Information table ........................................................................................................................................... 4
Changes from Original (May 2014) to Revision A
•
2
Page
Made changes to product preview data sheet........................................................................................................................ 1
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Product Folder Links: REF2025 REF2030 REF2033 REF2041
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SBOS600D – MAY 2014 – REVISED JULY 2018
5 Device Comparison Table
PRODUCT
VREF
VBIAS
REF2025
2.5 V
1.25 V
REF2030
3.0 V
1.5 V
REF2033
3.3 V
1.65 V
REF2041
4.096 V
2.048 V
6 Pin Configuration and Functions
DDC Package
SOT23-5
(Top View)
VBIAS
1
GND
2
EN
3
5
VREF
4
VIN
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
1
VBIAS
2
GND
—
3
EN
Input
Enable (EN ≥ VIN – 0.7 V, device enabled)
4
VIN
Input
Input supply voltage
5
VREF
Output
Output
Copyright © 2014–2018, Texas Instruments Incorporated
Bias voltage output (VREF / 2)
Ground
Reference voltage output (VREF)
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SBOS600D – MAY 2014 – REVISED JULY 2018
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Input voltage
Temperature
MIN
MAX
VIN
–0.3
6
EN
–0.3
VIN + 0.3
Operating
–55
150
Junction, Tj
V
150
Storage, Tstg
(1)
UNIT
–65
°C
170
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
Electrostatic discharge
(1)
UNIT
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±1500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
(1)
Supply input voltage range (IL = 0 mA, TA = 25°C)
NOM
MAX
VREF + 0.02 (1)
5.5
UNIT
V
See Figure 28 in Typical Characteristics for minimum input voltage at different load currents and temperature
7.4 Thermal Information
REF20xx
THERMAL METRIC (1)
DDC (SOT23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
193.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
40.2
°C/W
RθJB
Junction-to-board thermal resistance
34.5
°C/W
ψJT
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
34.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5
SBOS600D – MAY 2014 – REVISED JULY 2018
Electrical Characteristics
At TA = 25°C, IL = 0 mA, and VIN = 5 V, unless otherwise noted. Both VREF and VBIAS have the same specifications.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ACCURACY AND DRIFT
Output voltage accuracy
–0.05%
Output voltage temperature coefficient (1)
–40°C ≤ TA ≤ 125°C
0.05%
±3
±8
±1.5
±6
±2
±7
VREF + 0.02 V ≤ VIN ≤ 5.5 V
3
35
Sourcing
0 mA ≤ IL ≤ 20 mA ,
VREF + 0.6 V ≤ VIN ≤ 5.5 V
8
20
Sinking
0 mA ≤ IL ≤ –20 mA,
VREF + 0.02 V ≤ VIN ≤ 5.5 V
8
20
360
430
VREF and VBIAS tracking over temperature (2)
–40°C ≤ TA ≤ 85°C
–40°C ≤ TA ≤ 125°C
ppm/°C
ppm/°C
LINE AND LOAD REGULATION
ΔVO(ΔVI)
ΔVO(ΔIL)
Line regulation
Load regulation
ppm/V
ppm/mA
POWER SUPPLY
Active mode
ICC
Supply current
Shutdown mode
–40°C ≤ TA ≤ 125°C
460
3.3
–40°C ≤ TA ≤ 125°C
9
Device in shutdown mode (EN = 0)
Enable voltage
Device in active mode (EN = 1)
0
0.7
VIN – 0.7
VIN
10
Dropout voltage
IL = 20 mA
ISC
Short-circuit current
ton
Turn-on time
0.1% settling, CL = 1 µF
Low-frequency noise (3)
0.1 Hz ≤ f ≤ 10 Hz
Output voltage noise density
f = 100 Hz
µA
5
V
20
mV
600
50
mA
500
µs
NOISE
12
ppmPP
0.25
ppm/√Hz
CAPACITIVE LOAD
Stable output capacitor range
0
10
µF
HYSTERESIS AND LONG TERM STABILITY
Long-term stability
0 to 1000 hours
Output voltage hysteresis (4)
(1)
(2)
(3)
(4)
25°C, –40°C, 125°C, 25°C
60
Cycle 1
60
Cycle 2
35
ppm
ppm
Temperature drift is specified according to the box method. See the Feature Description section for more details.
The VREF and VBIAS tracking over temperature specification is explained in more detail in the Feature Description section.
The peak-to-peak noise measurement procedure is explained in more detail in the Noise Performance section.
The thermal hysteresis measurement procedure is explained in more detail in the Thermal Hysteresis section.
Copyright © 2014–2018, Texas Instruments Incorporated
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7.6 Typical Characteristics
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
50
70
60
40
Population (%)
Population (%)
50
40
30
30
20
20
10
0
0.05
0.04
0.03
0.02
0.01
0
-0.01
-0.02
-0.03
-0.04
0
-0.05
10
VREF Initial Accuracy (%)
0
1
2
3
4
5
6
7
8
VREF Drift Distribution (ppm/ƒC)
C015
C010
–40°C ≤ TA ≤ 125°C
Figure 1. Initial Accuracy Distribution (VREF)
Figure 2. Drift Distribution (VREF)
80
50
70
40
Population (%)
Population (%)
60
50
40
30
30
20
20
10
0
0.05
0.04
0.03
0.02
0.01
0
-0.01
-0.02
-0.03
-0.04
0
-0.05
10
VBIAS Initial Accuracy (%)
0
1
2
3
4
5
6
7
8
VBIAS Drift Distribution (ppm/ƒC)
C015
C008
–40°C ≤ TA ≤ 125°C
Figure 3. Initial Accuracy Distribution (VBIAS)
Figure 4. Drift Distribution (VBIAS)
60
40
50
Population (%)
Population (%)
30
20
40
30
20
10
0
80
60
40
20
0
±20
±40
±60
±80
0
±100
10
0
1
2
3
4
5
6
VREF and VBIAS Tracking Over Temperature (ppm/ƒC)
VREF and VBIAS Matching (ppm)
C016
C004
–40°C ≤ TA ≤ 85°C
Figure 5. VREF – 2 × VBIAS Distribution
6
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Figure 6. Distribution of VREF – 2 × VBIAS Drift Tracking
Over Temperature
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SBOS600D – MAY 2014 – REVISED JULY 2018
Typical Characteristics (continued)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
50
60
40
40
Population (%)
Population (%)
50
30
20
30
20
10
10
0
0
1
2
3
4
5
6
0
7
-0.0125 -0.01 -0.0075 -0.005 -0.0025
VREF and VBIAS Tracking Over Temperature (ppm/ƒC)
0
0.0025
Solder Heat Shift Histogram - VREF (%)
C041
C017
–40°C ≤ TA ≤ 125°C
Refer to the Solder Heat Shift section for more information.
Figure 7. Distribution of VREF – 2 × VBIAS Drift Tracking
Over Temperature
Figure 8. Solder Heat Shift Distribution (VREF)
60
0.05
0.04
Output Voltage Accuracy (%)
Population (%)
50
40
30
20
10
0.03
VBIAS
0.02
0.01
0
-0.01
-0.02
VREF
-0.03
-0.04
0
-0.0125 -0.01 -0.0075 -0.005 -0.0025
0
-0.05
0.0025
±75
±50
±25
0
Solder Heat Shift Histogram - VBIAS (%)
25
50
75
100
125
Temperature (ƒC)
150
C001
C040
Refer to the Solder Heat Shift section for more information.
Figure 9. Solder Heat Shift Distribution (VBIAS)
Figure 10. Output Voltage Accuracy (VREF) vs Temperature
1000
2.5005
-40°C
2.5000
500
250
VREF (V)
VREF - 2 x VBIAS (ppm)
750
0
±250
2.4995
25°C
2.4990
125°C
±500
2.4985
±750
±1000
2.4980
±75
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
±20
±15
±10
±5
C003
0
5
10
Load Current (mA)
15
20
C038
VREF output
Figure 11. VREF – 2 × VBIAS Tracking vs Temperature
Copyright © 2014–2018, Texas Instruments Incorporated
Figure 12. Output Voltage Change vs Load Current (VREF)
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Typical Characteristics (continued)
1.2503
-40°C
VBIAS (V)
1.2501
1.2499
1.2497
25°C
125°C
1.2495
1.2493
±20
±15
±10
0
±5
5
10
15
Load Current (mA)
20
VREF - Load Regulation Sourcing (ppm/mA)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
11
10
9
8
7
6
5
4
0
25
50
75
100
125
Temperature (ƒC)
VBIAS output
150
7
6
5
4
±75
±50
±25
0
25
50
75
100
125
150
C025
IL = 20 mA
Figure 14. Load Regulation Sourcing vs Temperature (VREF)
12
11
10
9
8
7
6
5
4
±75
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
IL = 20 mA
VREF output
150
C021
IL = –20 mA
Figure 16. Load Regulation Sinking vs Temperature (VREF)
5
12
11
VREF Line Regulation (ppm/V)
VBIAS - Load Regulation Sinking (ppm/mA)
8
C020
Figure 15. Load Regulation Sourcing vs Temperature (VBIAS)
10
9
8
7
6
5
4.5
4
3.5
3
2.5
2
4
±75
±50
±25
0
25
50
75
Temperature (ƒC)
VBIAS output
100
125
150
IL = –20 mA
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±75
±50
±25
0
25
50
75
Temperature (ƒC)
C022
Figure 17. Load Regulation Sinking vs Temperature (VBIAS)
8
9
Temperature (ƒC)
VREF - Load Regulation Sinking (ppm/mA)
VBIAS - Load Regulation Sourcing (ppm/mA)
12
±25
10
VREF output
Figure 13. Output Voltage Change vs Load Current (VBIAS)
±50
11
C039
VBIAS output
±75
12
100
125
150
C019
VREF output
Figure 18. Line Regulation vs Temperature (VREF)
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SBOS600D – MAY 2014 – REVISED JULY 2018
Typical Characteristics (continued)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
100
4.5
VBIAS
80
4
PSRR (dB)
VBIAS Line Regulation (ppm/V)
5
3.5
VREF
60
3
40
2.5
2
20
±75
±50
±25
0
25
50
75
100
Temperature (ƒC)
125
150
1
10
100
1k
10k
100k
Frequency (Hz)
C018
VBIAS output
C026
CL = 0 µF
Figure 19. Line Regulation vs Temperature (VBIAS)
Figure 20. Power-Supply Rejection Ratio vs Frequency
100
VIN + 0.25 V
VBIAS
500 mV/div
PSRR (dB)
80
VIN + 0.25 V
VIN - 0.25 V
VREF
VREF
40 mV/div
60
40
20
1
10
100
1k
10k
Frequency (Hz)
Time (500 µs/div)
100k
C027
C006
CL = 10 µF
CL = 1 µF
Figure 21. Power-Supply Rejection Ratio vs Frequency
VIN + 0.25 V
500 mV/div
Figure 22. Line Transient Response
VIN + 0.25V
+1 mA
VIN - 0.25V
+1 mA
2 mA/div
- 1 mA
VREF
40 mV/div
VREF
20 mV/div
Time (500 µs/div)
Time (500 µs/div)
C006
CL = 10 µF
Figure 23. Line Transient Response
Copyright © 2014–2018, Texas Instruments Incorporated
C032
CL = 1 µF
IL = ±1-mA step
Figure 24. Load Transient Response
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Typical Characteristics (continued)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
+20 mA
+20 mA
+1 mA
+1 mA
40 mA/div
2 mA/div
-20 mA
- 1 mA
VREF
VREF
20 mV/div
40 mV/div
Time (500 µs/div)
Time (500 µs/div)
C037
CL = 10 µF
C031
IL = ±1-mA step
CL = 1 µF
Figure 25. Load Transient Response
IL = ±20-mA step
Figure 26. Load Transient Response
400
125°C
Dropout Voltage (mV)
+20 mA
+20 mA
40 mA/div
-20 mA
VREF
40 mV/div
300
25°C
±40°C
200
100
0
Time (500 µs/div)
±30
±20
±10
CL = 10 µF
0
10
20
Load Current (mA)
C036
C005
IL = ±20-mA step
Figure 27. Load Transient Response
Figure 28. Minimum Dropout Voltage vs Load Current
VIN
VIN
2 V/div
2 V/div
VREF
VREF
Time (100 µs/div)
Time (100 µs/div)
C033
CL = 1 µF
Figure 29. Turn-On Settling Time
10
30
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C034
CL = 10 µF
Figure 30. Turn-On Settling Time
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SBOS600D – MAY 2014 – REVISED JULY 2018
Typical Characteristics (continued)
500
500
450
450
Quiescent Current ( A)
Quiescent Current ( A)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
400
350
300
400
350
300
250
250
200
200
±75
±50
±25
0
25
50
75
100
125
2
150
Temperature (ƒC)
3
4
5
6
Input Voltage (V)
C006
Voltage (5 V/div)
Figure 32. Quiescent Current vs Input Voltage
Voltage (5 V/div)
Figure 31. Quiescent Current vs Temperature
C007
Time (1 s/div)
Time (1 s/div)
C028
C029
VREF output
VBIAS output
Figure 33. 0.1-Hz to 10-Hz Noise (VREF)
Figure 34. 0.1-Hz to 10-Hz Noise (VBIAS)
100
CL = 0 F
Output Impedance ( )
2XWSXW 1RLVH 6SHFWUDO 'HQVLW\ SSP ¥+]
1
CL = 0 µF
0.1
CL = 4.7 F
10
CL = 1µF
1
CL = 10 F
0.1
CL = 10 µF
0.01
1
10
100
1k
Frequency (Hz)
10k
0.01
0.01
0.1
1
10
100
1k
10k
Frequency (Hz)
C030
100k
C024
VREF output
Figure 35. Output Voltage Noise Spectrum
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Figure 36. Output Impedance vs Frequency (VREF)
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Typical Characteristics (continued)
At TA = 25°C, IL = 0 mA, VIN = 5-V power supply, CL = 0 µF, and 2.5-V output, unless otherwise noted.
100
40
35
30
10
Population (%)
Output Impedance ( )
CL = 0 F
CL = 1µF
1
CL = 10 F
25
20
15
10
0.1
100
1k
10k
80
60
100k
Frequency (Hz)
120
10
100
1
40
0
0.1
20
0.01
0.01
0
5
Thermal Hysterisis - VREF (ppm)
C023
C013
VBIAS output
Figure 37. Output Impedance vs Frequency (VBIAS)
Figure 38. Thermal Hysteresis Distribution (VREF)
40
35
Population (%)
30
25
20
15
10
120
100
80
60
40
20
0
0
5
Thermal Hysteresis - VBIAS (ppm)
C014
Figure 39. Thermal Hysteresis Distribution (VBIAS)
12
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8 Parameter Measurement Information
8.1 Solder Heat Shift
The materials used in the manufacture of the REF20xx have differing coefficients of thermal expansion, resulting
in stress on the device die when the part is heated. Mechanical and thermal stress on the device die can cause
the output voltages to shift, degrading the initial accuracy specifications of the product. Reflow soldering is a
common cause of this error.
In order to illustrate this effect, a total of 92 devices were soldered on four printed circuit boards [23 devices on
each printed circuit board (PCB)] using lead-free solder paste and the paste manufacturer suggested reflow
profile. The reflow profile is as shown in Figure 40. The printed circuit board is comprised of FR4 material. The
board thickness is 1.57 mm and the area is 171.54 mm × 165.1 mm.
The reference and bias output voltages are measured before and after the reflow process; the typical shift is
displayed in Figure 41 and Figure 42. Although all tested units exhibit very low shifts (< 0.01%), higher shifts are
also possible depending on the size, thickness, and material of the printed circuit board. An important note is that
the histograms display the typical shift for exposure to a single reflow profile. Exposure to multiple reflows, as is
common on PCBs with surface-mount components on both sides, causes additional shifts in the output bias
voltage. If the PCB is exposed to multiple reflows, the device should be soldered in the second pass to minimize
its exposure to thermal stress.
300
Temperature (ƒC)
250
200
150
100
50
0
0
50
100
150
200
250
300
Time (seconds)
350
400
C01
Figure 40. Reflow Profile
60
50
50
Population (%)
Population (%)
40
30
20
10
0
40
30
20
10
-0.0125 -0.01 -0.0075 -0.005 -0.0025
0
0.0025
Solder Heat Shift Histogram - VREF (%)
0
-0.0125 -0.01 -0.0075 -0.005 -0.0025
0
0.0025
Solder Heat Shift Histogram - VBIAS (%)
C040
C041
Figure 41. Solder Heat Shift Distribution, VREF (%)
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Figure 42. Solder Heat Shift Distribution, VBIAS (%)
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8.2 Thermal Hysteresis
Thermal hysteresis is measured with the REF20xx soldered to a PCB, similar to a real-world application. Thermal
hysteresis for the device is defined as the change in output voltage after operating the device at 25°C, cycling the
device through the specified temperature range, and returning to 25°C. Hysteresis can be expressed by
Equation 1:
§ VPRE VPOST ·
6
VHYST
¨¨
¸¸ x 10 (ppm)
V
NOM
©
¹
where
•
•
•
•
VHYST = thermal hysteresis (in units of ppm),
VNOM = the specified output voltage,
VPRE = output voltage measured at 25°C pre-temperature cycling, and
VPOST = output voltage measured after the device has cycled from 25°C through the specified temperature
range of –40°C to 125°C and returns to 25°C.
(1)
40
35
35
30
30
C013
Figure 43. Thermal Hysteresis Distribution (VREF)
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120
Thermal Hysteresis - VBIAS (ppm)
Thermal Hysterisis - VREF (ppm)
14
100
120
0
100
0
80
5
60
5
40
10
20
10
80
15
60
15
20
40
20
25
20
25
0
Population (%)
40
0
Population (%)
Typical thermal hysteresis distribution is as shown in Figure 43 and Figure 44.
C014
Figure 44. Thermal Hysteresis Distribution (VBIAS)
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8.3 Noise Performance
Voltage (5 V/div)
Voltage (5 V/div)
Typical 0.1-Hz to 10-Hz voltage noise can be seen in Figure 45 and Figure 46. Device noise increases with
output voltage and operating temperature. Additional filtering can be used to improve output noise levels,
although care should be taken to ensure the output impedance does not degrade ac performance. Peak-to-peak
noise measurement setup is shown in Figure 47.
Time (1 s/div)
Time (1 s/div)
C028
C029
Figure 45. 0.1-Hz to 10-Hz Noise (VREF)
Figure 46. 0.1-Hz to 10-Hz Noise (VBIAS)
10 k
100
40 mF
VIN
To scope
VREF
REF20xx
0.1 F
GND
+
10 F
EN
1k
2-Pole High-pass
4-Pole Low-pass
0.1 Hz to 10 Hz Filter
VBIAS
Figure 47. 0.1-Hz to 10-Hz Noise Measurement Setup
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9 Detailed Description
9.1 Overview
The REF20xx are a family of dual-output, VREF and VBIAS (VREF / 2) band-gap voltage references. The Functional
Block Diagram section provides a block diagram of the basic band-gap topology and the two buffers used to
derive the VREF and VBIAS outputs. Transistors Q1 and Q2 are biased such that the current density of Q1 is greater
than that of Q2. The difference of the two base emitter voltages (VBE1 – VBE2) has a positive temperature
coefficient and is forced across resistor R5. The voltage is amplified and added to the base emitter voltage of Q2,
which has a negative temperature coefficient. The resulting band-gap output voltage is almost independent of
temperature. Two independent buffers are used to generate VREF and VBIAS from the band-gap voltage. The
resistors R1, R2 and R3, R4 are sized such that VBIAS = VREF / 2.
e-Trim™ is a method of package-level trim for the initial accuracy and temperature coefficient of VREF and VBIAS,
implemented during the final steps of manufacturing after the plastic molding process. This method minimizes the
influence of inherent transistor mismatch, as well as errors induced during package molding. e-Trim is
implemented in the REF20xx to minimize the temperature drift and maximize the initial accuracy of both the VREF
and VBIAS outputs.
9.2 Functional Block Diagram
R2
R6
R1
R7
+
VREF
+
e-Trim
R5
+
VBE1
-
+
R4
VBE2
-
R3
Q2
Q1
VBIAS
+
e-Trim
9.3 Feature Description
9.3.1 VREF and VBIAS Tracking
Most single-supply systems require an additional stable voltage in the middle of the analog-to-digital converter
(ADC) input range to bias input bipolar signals. The VREF and VBIAS outputs of the REF20xx are generated from
the same band-gap voltage as shown in the Functional Block Diagram section. Hence, both outputs track each
other over the full temperature range of –40°C to 125°C with an accuracy of 7 ppm/°C (max). The tracking
accuracy increases to 6 ppm/°C (max) when the temperature range is limited to –40°C to 85°C. The tracking
error is calculated using the box method, as described by Equation 2:
VDIFF(MAX) VDIFF (MIN)
§
·
6
Tracking Error
¨
¸ x 10 (ppm)
© VREF x Temperature Range ¹
where
•
16
VDIFF
VREF
2 ‡ VBIAS
(2)
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Feature Description (continued)
The tracking accuracy is as shown in Figure 48.
0.05
Output Voltage Accuracy (%)
0.04
0.03
VBIAS
0.02
0.01
0
-0.01
-0.02
VREF
-0.03
-0.04
-0.05
±75
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
C001
Figure 48. VREF and VBIAS Tracking vs Temperature
9.3.2 Low Temperature Drift
The REF20xx is designed for minimal drift error, which is defined as the change in output voltage over
temperature. The drift is calculated using the box method, as described by Equation 3:
V REF(MAX) V REF(MIN)
§
·
6
Drift ¨
¸ x 10 (ppm)
x
V
Temperature
Range
© REF
¹
(3)
9.3.3 Load Current
The REF20xx family is specified to deliver a current load of ±20 mA per output. Both the VREF and VBIAS outputs
of the device are protected from short circuits by limiting the output short-circuit current to 50 mA. The device
temperature increases according to Equation 4:
TJ TA PD ‡ R -$
where
•
•
•
•
TJ = junction temperature (°C),
TA = ambient temperature (°C),
PD = power dissipated (W), and
RθJA = junction-to-ambient thermal resistance (°C/W)
(4)
The REF20xx maximum junction temperature must not exceed the absolute maximum rating of 150°C.
9.4 Device Functional Modes
When the EN pin of the REF20xx is pulled high, the device is in active mode. The device should be in active
mode for normal operation. The REF20xx can be placed in a low-power mode by pulling the ENABLE pin low.
When in shutdown mode, the output of the device becomes high impedance and the quiescent current of the
device reduces to 5 µA in shutdown mode. See the Electrical Characteristics for logic high and logic low voltage
levels.
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10 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The low-drift, bidirectional, single-supply, low-side, current-sensing solution, described in this section, can
accurately detect load currents from –2.5 A to 2.5 A. The linear range of the output is from 250 mV to 2.75 V.
Positive current is represented by output voltages from 1.5 V to 2.75 V, whereas negative current is represented
by output voltages from 250 mV to 1.5 V. The difference amplifier is the INA213 current-shunt monitor, whose
supply and reference voltages are supplied by the low-drift REF2030.
Industrial applications with electronics in corrosive environments are susceptible to corrosive damage due to the
exposure to heat, moisture, and corrosive gases. The combination of the following conditions in a given system
lead to higher risk of corrosive damage:
1.
2.
3.
4.
Ventilated enclosures exposing underlying PCB.
PCBs not conformally coated.
Exposed-lead components with plating susceptible to corrosion.
Changes in plating techniques for RoHS compliance (e.g. removal of Pb (lead) and certain types of plating).
To improve resistance to corrosion in harsh environments, the REF2025AISDDCR uses Matte-Sn plating with
improved assembly process to reduce exposed Cu, leading to improved corrosion resistance in the Battelle
Class III and similar harsh environments. The “S” in the part number identifies this special plating option.
REF2025 versions that do not have the “S” will continue to be available in industry standard NiPdAu processing
technique.
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10.2 Typical Application
10.2.1 Low-Side, Current-Sensing Application
REF20xx
VREF
+
VIN
Bandgap
EN
+
VCC
VBIAS
+
±
GND
REF
±ILOAD
VBUS
+
±
IN+
V+
VREF
+
RSHUNT
OUT
ADC
VOUT
INGND
INA213B
Figure 49. Low-Side, Current-Sensing Application
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Typical Application (continued)
10.2.1.1 Design Requirements
The design requirements are as follows:
1. Supply voltage: 5.0 V
2. Load current: ±2.5 A
3. Output: 250 mV to 2.75 V
4. Maximum shunt voltage: ±25 mV
10.2.1.2 Detailed Design Procedure
Low-side current sensing is desirable because the common-mode voltage is near ground. Therefore, the currentsensing solution is independent of the bus voltage, VBUS. When sensing bidirectional currents, use a differential
amplifier with a reference pin. This procedure allows for the differentiation between positive and negative
currents by biasing the output stage such that it can respond to negative input voltages. There are a variety of
methods for supplying power (V+) and the reference voltage (VREF, or VBIAS) to the differential amplifier. For a
low-drift solution, use a monolithic reference that supplies both power and the reference voltage. Figure 50
shows the general circuit topology for a low-drift, low-side, bidirectional, current-sensing solution. This topology is
particularly useful when interfacing with an ADC; see Figure 49. Not only do VREF and VBIAS track over
temperature, but their matching is much better than alternate topologies. For a more detailed version of the
design procedure, refer to TIDU357.
REF20xx
VREF
+
VIN
Bandgap
EN
+
VCC
VBIAS
+
±
GND
REF
±ILOAD
VBUS
+
±
IN+
± VSHUNT
V+
+
RSHUNT
OUT
VOUT
INGND
INA213B
Figure 50. Low-Drift, Low-side, Bidirectional, Current-Sensing Circuit Topology
The transfer function for the circuit given in Figure 50 is as shown in Equation 5:
VOUT G ‡ r VSHUNT
VBIAS
G ‡ rILOAD ‡ RSHUNT
20
VBIAS
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Typical Application (continued)
10.2.1.2.1 Shunt Resistor
As illustrated in Figure 50, the value of VSHUNT is the ground potential for the system load. If the value of VSHUNT
is too large, issues may arise when interfacing with systems whose ground potential is actually 0 V. Also, a value
of VSHUNT that is too negative may violate the input common-mode voltage of the differential amplifier in addition
to potential interfacing issues. Therefore, limiting the voltage across the shunt resistor is important. Equation 6
can be used to calculate the maximum value of RSHUNT.
VSHUNT(max)
R SHUNT(max)
I LOAD(max)
(6)
Given that the maximum shunt voltage is ±25 mV and the load current range is ±2.5 A, the maximum shunt
resistance is calculated as shown in Equation 7.
VSHUNT (max) 25mV
R SHUNT (max)
10m:
I LOAD (max)
2.5A
(7)
To minimize errors over temperature, select a low-drift shunt resistor. To minimize offset error, select a shunt
resistor with the lowest tolerance. For this design, the Y14870R01000B9W resistor is used.
10.2.1.2.2 Differential Amplifier
The differential amplifier used for this design should have the following features:
1. Single-supply (3 V),
2. Reference voltage input,
3. Low initial input offset voltage (VOS),
4. Low-drift,
5. Fixed gain, and
6. Low-side sensing (input common-mode range below ground).
For this design, a current-shunt monitor (INA213) is used. The INA21x family topology is shown in Figure 51. The
INA213B specifications can be found in the INA213 product data sheet.
V+
-
IN-
OUT
+
IN+
REF
GND
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Figure 51. INA21x Current-Shunt Monitor Topology
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Typical Application (continued)
The INA213B is an excellent choice for this application because all the required features are included. In general,
instrumentation amplifiers (INAs) do not have the input common-mode swing to ground that is essential for this
application. In addition, INAs require external resistors to set their gain, which is not desirable for low-drift
applications. Difference amplifiers typically have larger input bias currents, which reduce solution accuracy at
small load currents. Difference amplifiers typically have a gain of 1 V/V. When the gain is adjustable, these
amplifiers use external resistors that are not conducive to low-drift applications.
10.2.1.2.3 Voltage Reference
The voltage reference for this application should have the following features:
1. Dual output (3.0 V and 1.5 V),
2. Low drift, and
3. Low tracking errors between the two outputs.
For this design, the REF2030 is used. The REF20xx topology is as shown in the Functional Block Diagram
section.
The REF2030 is an excellent choice for this application because of its dual output. The temperature drift of
8 ppm/°C and initial accuracy of 0.05% make the errors resulting from the voltage reference minimal in this
application. In addition, there is minimal mismatch between the two outputs and both outputs track very well
across temperature, as shown in Figure 52 and Figure 53.
60
40
50
Population (%)
Population (%)
30
20
40
30
20
10
0
80
60
40
20
0
±20
±40
±60
±80
0
±100
10
0
1
2
3
4
5
6
VREF and VBIAS Tracking Over Temperature (ppm/ƒC)
VREF and VBIAS Matching (ppm)
C016
C004
Figure 52. VREF – 2 × VBIAS Distribution (At TA = 25°C)
Figure 53. Distribution of VREF – 2 × VBIAS Drift Tracking
Over Temperature
10.2.1.2.4 Results
Table 1 summarizes the measured results.
Table 1. Measured Results
UNCALIBRATED (%)
CALIBRATED (%)
Error across the full load current range (25°C)
ERROR
±0.0355
±0.004
Error across the full load current range (–40°C to 125°C)
±0.0522
±0.0606
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10.2.1.3 Application Curves
Performing a two-point calibration at 25°C removes the errors associated with offset voltage, gain error, and so
forth. Figure 54 to Figure 56 show the measured error at different conditions. For a more detailed description on
measurement procedure, calibration, and calculations, please refer to TIDU357.
3
800
Uncalibrated error (ppm)
Output Voltage (Vout)
-40°C
600
2.5
2
1.5
1
0.5
400
0°C
200
0
25°C
85°C
±200
±400
±600
0
125°C
±800
-3
-2
-1
0
1
2
Load current (mA)
3
±3
±2
±1
0
1
2
Load current (mA)
C00
Figure 54. Measured Transfer Function
3
C00
Figure 55. Uncalibrated Error vs Load Current
800
-40°C
Calibrated error (ppm)
600
400
0°C
200
0
25°C
85°C
±200
±400
±600
125°C
±800
±3
±2
±1
0
1
2
Load current (mA)
3
C00
Figure 56. Calibrated Error vs Load Current
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11 Power-Supply Recommendations
The REF20xx family of references feature an extremely low-dropout voltage. These references can be operated
with a supply of only 20 mV above the output voltage. For loaded reference conditions, a typical dropout voltage
versus load is shown in Figure 57. A supply bypass capacitor ranging between 0.1 µF to 10 µF is recommended.
400
Dropout Voltage (mV)
125°C
300
25°C
±40°C
200
100
0
±30
±20
±10
0
10
20
Load Current (mA)
30
C005
Figure 57. Dropout Voltage vs Load Current
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12 Layout
12.1 Layout Guidelines
Figure 58 shows an example of a PCB layout for a data acquisition system using the REF2030. Some key
considerations are:
• Connect low-ESR, 0.1-μF ceramic bypass capacitors at VIN, VREF, and VBIAS of the REF2030.
• Decouple other active devices in the system per the device specifications.
• Using a solid ground plane helps distribute heat and reduces electromagnetic interference (EMI) noise pickup.
• Place the external components as close to the device as possible. This configuration prevents parasitic errors
(such as the Seebeck effect) from occurring.
• Minimize trace length between the reference and bias connections to the INA and ADC to reduce noise
pickup.
• Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if
possible, and only make perpendicular crossings when absolutely necessary.
INOUT
Analog Input
Via
to GND
Plane
V+
Via to
Input Power
C
GND
C
REF
VBIAS
C
GND
EN
REF20xx
IN+
INA213
12.2 Layout Example
REF
VREF
C
Microcontroller
A/D Input
C
VIN
DIG1
AIN
Figure 58. Layout Example
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
• INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt
Monitors (SBOS437)
• Low-Drift Bidirectional Single-Supply Low-Side Current Sensing Reference Design (TIDU357)
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
REF2025
Click here
Click here
Click here
Click here
Click here
REF2030
Click here
Click here
Click here
Click here
Click here
REF2033
Click here
Click here
Click here
Click here
Click here
REF2041
Click here
Click here
Click here
Click here
Click here
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.5 Trademarks
E2E is a trademark of Texas Instruments.
e-Trim is a trademark of Texas Instruments, Inc.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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REF2025, REF2030, REF2033, REF2041
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SBOS600D – MAY 2014 – REVISED JULY 2018
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2014–2018, Texas Instruments Incorporated
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Product Folder Links: REF2025 REF2030 REF2033 REF2041
27
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
REF2025AIDDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GACM
REF2025AIDDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GACM
REF2025AISDDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 125
1M98
REF2030AIDDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GADM
REF2030AIDDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GADM
REF2033AIDDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GAEM
REF2033AIDDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GAEM
REF2041AIDDCR
ACTIVE
SOT-23-THIN
DDC
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GAFM
REF2041AIDDCT
ACTIVE
SOT-23-THIN
DDC
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
GAFM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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