SN65240PW

SN65220, SN65240, SN75240 SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 SNx52x0 USB Port Transient Suppressors 1 Features 3 Description • The SN65220 device is a dual, and the SN65240 and SN75240 devices are quadruple, unidirectional transient voltage suppressors (TVS). These devices provide electrical noise transient protection to Universal Serial Bus (USB) low and full-speed ports. The input capacitance of 35 pF makes it unsuitable for high-speed USB 2.0 applications. • • • • Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can cause damage to the USB transceiver or the USB ASIC if they are of sufficient magnitude and duration. 2 Applications • • USB full-speed host, HUB, or peripheral Ports The SN65220, SN65240, and SN75240 devices ESD performance is measured at the system level, according to IEC61000-4-2; system design, however, impacts the results of these tests. To accomplish a high compliance level, careful board design and layout techniques are required. Device Information(1) PART NUMBER SN65220 SN65240 SN75240 (1) PACKAGE BODY SIZE (NOM) SOT-23 (6) 2.90 mm × 1.60 mm DSBGA (4) 0.925 mm × 0.925 mm PDIP (8) 9.09 mm × 6.35 mm TSSOP (8) 3.00 mm × 4.40 mm See the orderable addendum at the end of the data sheet for all available packages. 7.5 USB Transceiver 5 27 D+ A 15 k GND SN65220 or ½ SNx5240 Current – A • Design to protect submicron 3-V or 5-V circuits from noise transients Port ESD protection capability exceeds: – 15-kV human body model – 2-kV machine model Available in a WCSP chip-scale package Stand-off voltage: 6 V (minimum) Low current leakage: 1-µA maximum at 6 V Low capacitance: 35-pF (typical) 2.5 0 -2.5 -5 15 k -7.5 B 27 Simplified Schematic D- -10 -10 -5 0 5 10 Voltage – V 15 TVS Current vs Voltage An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Device Comparison Table...............................................3 6 Pin Configuration and Functions...................................3 7 Specifications.................................................................. 4 7.1 Absolute Maximum Ratings........................................ 4 7.2 ESD Ratings............................................................... 4 7.3 Recommended Operating Conditions.........................4 7.4 Thermal Information....................................................4 7.5 Electrical Characteristics.............................................4 7.6 Typical Characteristics................................................ 5 8 Parameter Measurement Information............................ 5 9 Detailed Description........................................................6 9.1 Overview..................................................................... 6 9.2 Functional Block Diagram........................................... 6 9.3 Feature Description.....................................................7 9.4 Device Functional Modes............................................7 10 Application and Implementation.................................. 8 10.1 Application Information............................................. 8 10.2 Typical Application.................................................... 8 11 Power Supply Recommendations..............................10 12 Layout...........................................................................10 12.1 Layout Guidelines................................................... 10 12.2 Layout Example...................................................... 10 13 Device and Documentation Support..........................11 13.1 Receiving Notification of Documentation Updates.. 11 13.2 Support Resources................................................. 11 13.3 Trademarks............................................................. 11 13.4 Electrostatic Discharge Caution.............................. 11 13.5 Glossary.................................................................. 11 14 Mechanical, Packaging, and Orderable Information.................................................................... 11 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision I (April 2021) to Revision J (August 2022) Page • Updated the SN65220, SN65240, and SN75240 suppressors in the Device Comparison table........................3 Changes from Revision H (May 2015) to Revision I (April 2021) Page • Updated the numbering format for tables, figures and cross-references throughout the document ..................1 • Updated the units for resistance from O to Ω in the Simplified Schematic figure............................................... 1 • Updated the units from O to Ω in the Typical Application Schematic for ESD Protection of USB Transceivers figure ..................................................................................................................................................................8 • Updated the units from O to Ω in the Layout Example of a 4-Layer Board With SN65220 figure.................... 10 Changes from Revision G (August 2008) to Revision H (May 2015) Page • Added Pin Configuration and Functions section, ESD table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ........................................................................................................................... 1 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 5 Device Comparison Table PRODUCT SUPPRESSORS TA - RANGE PACKAGE SN65220 2 –40°C to 85°C SN65240 4 –40°C to 85°C SN75240 4 0°C to 70°C WCSP-4 SOT23-6 DIP-8 TSSOP-8 DIP-8 TSSOP-8 6 Pin Configuration and Functions 1 GND 2 NC 3 SADI NC 6 A 5 GND 4 B GND C GND D 8 7 6 5 1 2 3 4 A GND B GND Figure 6-2. P, PW Package,s 8-Pin PDIP, TSSOP (Top View) Figure 6-1. DBV Package, 6-Pin SOT-23 (Top View) Table 6-1. Pin Functions PIN TYPE DESCRIPTION NAME DBV P, PW A 6 8 Analog input Transient suppressor input – Line 1 B 4 6 Analog input Transient suppressor input – Line 2 C — 2 Analog input Transient suppressor input – Line 3 D — 4 Analog input Transient suppressor input – Line 4 GND 2, 5 1, 3, 5, 7 Power NC 1, 3 — — Local device ground Internally not connected A A1 A2 GND B B1 B2 GND Figure 6-3. YZB Package, 4-Pin DSBGA (Top View) Table 6-2. Pin Functions PIN TYPE DESCRIPTION NO. NAME A1 A Analog input Transient suppressor input – Line 1 B1 B Analog input Transient suppressor input – Line 2 A2, B2 GND Power Local device ground Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 3 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT 60 W Peak forward surge current 3 A Peak reverse surge current –9 A 150 °C PD(peak) Peak power dissipation IFSM IRSM Tstg Storage temperature (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Section 7.3 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±15000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±2000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions MIN TA Ambient temperature SN75240 SN65220, SN65240 MAX UNIT 0 70 –40 85 °C 7.4 Thermal Information SN65220 THERMAL METRIC(1) SN65240, SN75240 DBV (SOT-23) YZB (DSBGA) P (PDIP) 6 PINS 4 BALLS RθJA Junction-to-ambient thermal resistance 199.5 170 67.5 RθJC(top) Junction-to-case (top) thermal resistance 159.7 1.8 RθJB Junction-to-board thermal resistance 51.1 43.5 ψJT Junction-to-top characterization parameter 41 9.2 ψJB Junction-to-board characterization parameter 50.5 43.5 (1) PW (TSSOP) UNIT 8 PINS 185.3 °C/W 57.9 68.8 °C/W 44.5 114.0 °C/W 36.2 9.9 °C/W 44.5 112.3 °C/W For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER 4 TEST CONDITIONS Ilkg Leakage current VI = 6 V at A, B, C, or D terminals V(BR) Breakdown voltage VI = 1 mA at A, B, C, or D terminals CIN Input capacitance to ground VI = 0.4 sin (4E6πt) + 0.5 V Submit Document Feedback MIN TYP MAX 1 6.5 7 35 8 UNIT µA V pF Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 7.6 Typical Characteristics TA = 25°C unless otherwise noted. 7.5 5 TVS Current – A 2.5 0 -2.5 -5 -7.5 -10 -10 -5 0 5 TVS Voltage – V 10 15 Figure 7-1. Transient-Voltage-Suppressor Current vs Voltage 8 Parameter Measurement Information ILK VI DUT Figure 8-1. Measurement of Leakage Current II VBR DUT Figure 8-2. Measurement of Breakdown Voltage Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 5 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 9 Detailed Description 9.1 Overview The SN65220, SN65240, and SN75240 devices integrate multiple unidirectional transient voltage suppressors (TVS). Figure 9-1 shows the equivalent circuit diagram of a single TVS diode. For positive transient voltages, only the Q1 transistor determines the switching characteristic. When the input voltage reaches the Zener voltage, VZ, Zener diode D1 conducts; therefore, allowing for the base-emitter voltage, VBE, to increase. At VIN = VZ + VBE, the transistor starts conducting. From then on, its on-resistance decreases linearly with increasing input voltage. For negative transient voltages, only diode D2 determines the switching characteristic. Here, switching occurs when the input voltage exceeds the diode forward voltage, VFW. 7.5 5 Current – A A,B,C or D D1 Q1 D2 R1 GND 2.5 VFW VZ VBE 0 -2.5 -5 Measured from A,B,C or D to GND -7.5 -10 -10 -5 0 5 10 Voltage – V 15 Figure 9-1. TVS Structure and Current — Voltage Characteristic 9.2 Functional Block Diagram SN65240 SN75240 A C SN65220 A GND GND GND GND GND GND B 6 B D Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 www.ti.com SN65220, SN65240, SN75240 SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 9.3 Feature Description The SN65220, SN65240, and SN75240 family of unidirectional transient voltage suppressors provide transient protection to Universal Serial Bus low and full−speed ports. These TVS diodes provide a minimum breakdown voltage of 6.5-V to protect USB transceivers and USB ASICs typically implemented in 3-V or 5-V digital CMOS technology. 9.4 Device Functional Modes TVS diodes possess two functional modes, a high-impedance and a conducting mode. During normal operating conditions, that is in the absence of high voltage transients, the breakdown voltage of TVS diodes is not exceeded and the devices remain high-impedance. In the presence of high-voltage transients the breakdown voltage is exceeded. The TVS diodes then conduct and become low-impedance. In this mode excessive transient energy is shunted directly to local circuit ground, preventing USB transceivers from electrical damage. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 7 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 10 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 10.1 Application Information The USB has become a popular solution to connect PC peripherals. The USB allows devices to be hot-plugged in and out of the existing PC system without rebooting or turning off the PC. Because frequent human interaction with the USB system occurs as a result of its attractive hot-plugging ability, there is the possibility for large ESD strikes and damage to crucial system elements. The ESD protection included on the existing hardware is typically in the 2-kV to 4-kV range for the human body model (HBD) and 200-V to 300-V for the machine model (MM). The ESD voltage levels found in a normal USB operating environment can exceed these levels. The SN75240, SN65240, and SN65220 devices will increase the robustness of the existing USB hardware to ESD strikes common to the environment in which USB is likely to be used. 10.2 Typical Application Figure 10-1 shows a typical USB system and application of the SN75240, SN65240, and SN65220 devices. Connections to pin A from the D+ data line, pin B from the D– data line, and the device grounds from the GND line that already exists are necessary to increase the amount of ESD protection provided to the USB port. The design of the suppressor gives it very low maximum current leakage of 1 μA, a very low typical capacitance of 35 pF, and a standoff voltage minimum of 6 V. Because of these levels, the SN75240, SN65240, and SN65220 devices will provide added protection to the USB system hardware during ESD events without introducing the high capacitance and current leakage levels typical of external transient voltage suppressors. The addition of an SN75240, SN65240, or SN65220 device is beneficial to both full-speed and low-speed USB 1.1 bandwidth standards. USB down stream transceiver USB hub port transceiver 1.5 k(1) 27
D+ D+ A 27  A 15 k GND SN65220 or ½ SNx5240 GND SN65220 or ½ SNx5240 15 k 1.5 k(2) B D- D- B 1) Full-speed only 27  2) Low-speed only 27 Figure 10-1. Typical Application Schematic for ESD Protection of USB Transceivers 8 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 10.2.1 Design Requirements For this design example, use the parameters listed in Table 10-1 as design parameters. Table 10-1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Minimum breakdown voltage (TVS) 6.5 V Maximum supply voltage (USB transceiver) 5.5 V Typical junction capacitance (TVS) 35 pF Maximum data rate (USB transceiver) 12 Mbps 10.2.2 Detailed Design Procedure To effectively protect USB transceivers, use TVS diodes with breakdown voltages close to 6 V, such as the SN65220, SN65240, or SN75220 devices. Because of the TVS junction capacitance of 35 pF, apply these TVS diodes only to USB transceivers with full-speed capability that is 12 Mbps maximum. Place the TVS diodes as close to the board connector as possible to prevent transient energies from entering further board space. Connect the TVS diode between the data lines (D+, D–) and local circuit ground (GND). Because noise transient represents high-speed frequencies, ensure low-inductance return paths for the transient currents by providing a solid ground plane and using two VIAs connecting the TVS terminals to ground. 10.2.3 Application Curve Ipk I(A) 90% Ipk 10% Ipk tr Time Figure 10-2. HBM Curve Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 9 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 11 Power Supply Recommendations Unlike other semiconductor components that require a supply voltage to operate, the SN65220, SN65240, and SN75240 transient suppressors are combinations of multiple p-n diodes, activated by transient voltages. Therefore, these transient suppressors do not require external voltage supplies. 12 Layout 12.1 Layout Guidelines The multiple ground pins provided lower the connection resistance to ground. In order to improve circuit operation, a connection to all ground pins must be provided on the system printed circuit board. Without proper device connection to ground, the speed and protection capability of the device will be degraded. • • • The ground termination pads should be connected directly to a ground plane on the board for optimum performance. A single trace ground conductor will not provide an effective path for fast rise-time transient events including ESD due to parasitic inductance. Nominal inductive values of a PCB trace are approximately 20 nH/cm. This value may seem small, but an apparent short length of trace may be sufficient to produce significant L(di/dt) effects with fast rise-time ESD spikes. Mount the TVS as close as possible to the I/O socket to reduce radiation originating from the transient as it is routed to ground. Note Direct connective paths of the traces are taken to the suppressor mounting pads to minimize parasitic inductance in the surge-current conductive path, thus minimizing L(di/dt) effects. 12.2 Layout Example VIA to Power Ground Plane USB Connector VIA to Power Supply Plane GND USB Transceiver 15 k 27 NC 27 SN65220 A GND GND NC B D+ D- 15 k VBUS Figure 12-1. Layout Example of a 4-Layer Board With SN65220 10 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 SN65220, SN65240, SN75240 www.ti.com SLLS266J – FEBRUARY 1997 – REVISED AUGUST 2022 13 Device and Documentation Support 13.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 13.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 13.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 13.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 13.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: SN65220 SN65240 SN75240 11 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) SN65220DBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SADI Samples SN65220DBVRG4 ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SADI Samples SN65220DBVT ACTIVE SOT-23 DBV 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SADI Samples SN65220DBVTG4 ACTIVE SOT-23 DBV 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 SADI Samples SN65240P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 SN65240P Samples SN65240PW ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 A65240 Samples SN65240PWG4 ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 A65240 Samples SN65240PWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 A65240 Samples SN75240P ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 SN75240P Samples SN75240PW ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 A75240 Samples SN75240PWG4 ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 A75240 Samples SN75240PWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 A75240 Samples SN75240PWRG4 ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 A75240 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of