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SN74LVC2G38DCURE4

SN74LVC2G38DCURE4

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VFSOP8

  • 描述:

    IC GATE NAND OD 2CH 2-INP 8VSSOP

  • 数据手册
  • 价格&库存
SN74LVC2G38DCURE4 数据手册
SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree™ Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4 ns at 3.3 V Low Power Consumption, 10-µA Max ICC ±24-mA Output Drive at 3.3 V Typical VOLP (Output Ground Bounce) 2 V at VCC = 3.3 V, TA = 25°C Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • • • DCT PACKAGE (TOP VIEW) YZP PACKAGE (BOTTOM VIEW) DCU PACKAGE (TOP VIEW) 1A 1 8 VCC 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A 1A 1B 2Y GND 1 2 3 8 7 6 4 5 VCC 1Y 2B 2A GND 2Y 1B 1A 4 5 3 6 2 7 1 8 2A 2B 1Y VCC See mechanical drawings for dimensions. DESCRIPTION/ORDERING INFORMATION The SN74LVC2G38 is designed for 1.65-V to 5.5-V VCC operation. This device is a dual two-input NAND buffer gate with open-drain outputs. It performs the Boolean function Y = A • B or Y = A + B in positive logic. NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. ORDERING INFORMATION PACKAGE (1) TA ORDERABLE PART NUMBER NanoFree™ – WCSP (DSBGA) Reel of 3000 0.23-mm Large Bump – YZP (Pb-free) –40°C to 85°C SSOP – DCT VSSOP – DCU (1) (2) TOP-SIDE MARKING (2) SN74LVC2G38YZPR _ _ _D7_ Reel of 3000 SN74LVC2G38DCTR C38_ _ _ Reel of 3000 SN74LVC2G38DCUR Reel of 250 SN74LVC2G38DCUT C38_ Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site. DCU: The actual top-side marking has one additional character that designates the assembly/test site. YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free). Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NanoFree is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004–2007, Texas Instruments Incorporated SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 FUNCTION TABLE (EACH GATE) INPUTS A B OUTPUT Y L L H L H H H L H H H L LOGIC DIAGRAM (POSITIVE LOGIC) 1A 1B 2A 2B 1 7 2 5 3 6 1Y 2Y Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX VCC Supply voltage range –0.5 6.5 V VI Input voltage range (2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V –0.5 VCC + 0.5 state (2) (3) VO Voltage range applied to any output in the high or low IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA ±100 mA Continuous current through VCC or GND θJA Package thermal impedance (4) Tstg Storage temperature range DCT package 220 DCU package 227 YZP package (1) (2) (3) (4) 2 UNIT V °C/W 102 –65 150 °C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. The value of VCC is provided in the recommended operating conditions table. The package thermal impedance is calculated in accordance with JESD 51-7. Submit Documentation Feedback SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 Recommended Operating Conditions VCC (1) Operating Supply voltage Data retention only 1.65 5.5 V 2 0.7 × VCC 0.35 × VCC VCC = 1.65 V to 1.95 V Low-level input voltage V 1.7 VCC = 3 V to 3.6 V VCC = 4.5 V to 5.5 V VIL UNIT 0.65 × VCC VCC = 2.3 V to 2.7 V High-level input voltage MAX 1.5 VCC = 1.65 V to 1.95 V VIH MIN VCC = 2.3 V to 2.7 V 0.7 VCC = 3 V to 3.6 V 0.8 V 0.3 × VCC VCC = 4.5 V to 5.5 V VI Input voltage 0 5.5 V VO Output voltage 0 VCC V VCC = 1.65 V 4 VCC = 2.3 V IOL Low-level output current ∆t/∆v 8 16 VCC = 3 V Input transition rise or fall rate VCC = 4.5 V 32 VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 VCC = 3.3 V ± 0.3 V 10 VCC = 5 V ± 0.5 V TA ns/V 5 Operating free-air temperature (1) mA 24 –40 °C 85 All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS IOL = 100 µA VOL TYP (1) MAX IOL = 4 mA 1.65 V 0.45 IOL = 8 mA 2.3 V 0.3 0.4 3V IOL = 24 mA IOL = 32 mA A or B inputs MIN 0.1 IOL = 16 mA II VCC 1.65 V to 5.5 V V 0.55 4.5 V VI = 5.5 V or GND UNIT 0.55 0 to 5.5 V ±1 µA 0 ±10 µA 1.65 V to 5.5 V 10 µA 3 V to 5.5 V 500 µA Ioff VI or VO = 5.5 V ICC VI = 5.5 V or GND, IO = 0 ∆ICC One input at VCC – 0.6 V, Other inputs at VCC or GND Ci VI = VCC or GND 3.3 V 4 pF Co VO = VCC or GND 3.3 V 4.5 pF (1) All typical values are at VCC = 3.3 V, TA = 25°C. Submit Documentation Feedback 3 SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 Switching Characteristics over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 1) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A or B Y VCC = 1.8 V ± 0.15 V VCC = 2.5 V ± 0.2 V VCC = 3.3 V ± 0.3 V VCC = 5 V ± 0.5 V UNIT MIN MAX MIN MAX MIN MAX MIN MAX 2.5 8.5 1.5 5.2 1.3 4 0.9 3 ns Switching Characteristics over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 2) PARAMETER tpd FROM (INPUT) TO (OUTPUT) A or B Y VCC = 1.8 V ± 0.15 V VCC = 2.5 V ± 0.2 V VCC = 3.3 V ± 0.3 V VCC = 5 V ± 0.5 V MIN MAX MIN MAX MIN MAX MIN MAX 2.8 10 1.6 6 1.4 4.5 1 3.9 UNIT ns Operating Characteristics TA = 25°C Cpd 4 PARAMETER TEST CONDITIONS Power dissipation capacitance f = 10 MHz VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V TYP TYP TYP TYP 6 7 7 9 Submit Documentation Feedback UNIT pF SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 PARAMETER MEASUREMENT INFORMATION (OPEN DRAIN) VLOAD S1 RL From Output Under Test Open GND CL (see Note A) RL TEST S1 tPZL (see Notes E and F) tPLZ (see Notes E and G) tPHZ/tPZH VLOAD VLOAD VLOAD LOAD CIRCUIT INPUTS VCC 1.8 V ± 0.15 V 2.5 V ± 0.2 V 3.3 V ± 0.3 V 5 V ± 0.5 V VI tr/tf VCC VCC 3V VCC ≤2 ns ≤2 ns ≤2.5 ns ≤2.5 ns VM VLOAD CL RL V∆ VCC/2 VCC/2 1.5 V VCC/2 2 × VCC 2 × VCC 6V 2 × VCC 15 pF 15 pF 15 pF 15 pF 1 MΩ 1 MΩ 1 MΩ 1 MΩ 0.15 V 0.15 V 0.3 V 0.3 V VI Timing Input VM 0V tW tsu VI Input VM VM th VI Data Input VM VM 0V 0V VOLTAGE WAVEFORMS PULSE DURATION VOLTAGE WAVEFORMS SETUP AND HOLD TIMES VI VM Input VM 0V tPLH VOH Output VM VOL tPHL VM VM 0V Output Waveform 1 S1 at VLOAD (see Note B) tPLH tPLZ VLOAD/2 VM tPZH VOH Output VM tPZL tPHL VM VI Output Control VM VOL VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES INVERTING AND NONINVERTING OUTPUTS Output Waveform 2 S1 at GND (see Note B) VOL + V∆ VOL tPHZ VM VOH – V∆ VOH ≈0 V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES LOW- AND HIGH-LEVEL ENABLING NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators have the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω. D. The outputs are measured one at a time, with one transition per measurement. E. Because this device has open-drain outputs, tPLZ and tPZL are the same as tPD. F. tPZL is measured at VM. G. tPLZ is measured at VOL + V∆. H. All parameters and waveforms are not applicable to all devices. Figure 1. Load Circuit and Voltage Waveforms Submit Documentation Feedback 5 SN74LVC2G38 DUAL 2-INPUT NAND GATE WITH OPEN-DRAIN OUTPUTS www.ti.com SCES554C – MARCH 2004 – REVISED FEBRUARY 2007 PARAMETER MEASUREMENT INFORMATION (OPEN DRAIN) VLOAD S1 RL From Output Under Test Open GND CL (see Note A) RL TEST S1 tPZL (see Notes E and F) tPLZ (see Notes E and G) tPHZ/tPZH VLOAD VLOAD VLOAD LOAD CIRCUIT INPUTS VCC 1.8 V ± 0.15 V 2.5 V ± 0.2 V 3.3 V ± 0.3 V 5 V ± 0.5 V VI tr/tf VCC VCC 3V VCC ≤2 ns ≤2 ns ≤2.5 ns ≤2.5 ns VM VLOAD CL RL V∆ VCC/2 VCC/2 1.5 V VCC/2 2 × VCC 2 × VCC 6V 2 × VCC 30 pF 30 pF 50 pF 50 pF 1 kΩ 500 Ω 500 Ω 500 Ω 0.15 V 0.15 V 0.3 V 0.3 V VI Timing Input VM 0V tW tsu VI Input VM VM th VI Data Input VM VM 0V 0V VOLTAGE WAVEFORMS PULSE DURATION VOLTAGE WAVEFORMS SETUP AND HOLD TIMES VI VM Input VM 0V tPLH VOH Output VM VOL tPHL VM VM 0V Output Waveform 1 S1 at VLOAD (see Note B) tPLH tPLZ VLOAD/2 VM tPZH VOH Output VM tPZL tPHL VM VI Output Control VM VOL VOLTAGE WAVEFORMS PROPAGATION DELAY TIMES INVERTING AND NONINVERTING OUTPUTS Output Waveform 2 S1 at GND (see Note B) VOL + V∆ VOL tPHZ VM VOH – V∆ VOH ≈0 V VOLTAGE WAVEFORMS ENABLE AND DISABLE TIMES LOW- AND HIGH-LEVEL ENABLING NOTES: A. CL includes probe and jig capacitance. B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control. C. All input pulses are supplied by generators have the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω. D. The outputs are measured one at a time, with one transition per measurement. E. Because this device has open-drain outputs, tPLZ and tPZL are the same as tPD. F. tPZL is measured at VM. G. tPLZ is measured at VOL + V∆. H. All parameters and waveforms are not applicable to all devices. Figure 2. Load Circuit and Voltage Waveforms 6 Submit Documentation Feedback PACKAGE OPTION ADDENDUM www.ti.com 5-May-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) SN74LVC2G38DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38 Z SN74LVC2G38DCTRE4 ACTIVE SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38 Z SN74LVC2G38DCUR ACTIVE US8 DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38DCURE4 ACTIVE US8 DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38DCURG4 ACTIVE US8 DCU 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38DCUT ACTIVE US8 DCU 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38DCUTE4 ACTIVE US8 DCU 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38DCUTG4 ACTIVE US8 DCU 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 85 C38R SN74LVC2G38YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 (D77 ~ D7N) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (3) 5-May-2013 MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Jul-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN74LVC2G38DCUR US8 DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3 SN74LVC2G38YZPR DSBGA YZP 8 3000 178.0 9.2 1.02 2.02 0.63 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 3-Jul-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN74LVC2G38DCUR US8 DCU 8 3000 202.0 201.0 28.0 SN74LVC2G38YZPR DSBGA YZP 8 3000 220.0 220.0 35.0 Pack Materials-Page 2 MECHANICAL DATA MPDS049B – MAY 1999 – REVISED OCTOBER 2002 DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE PACKAGE 0,30 0,15 0,65 8 0,13 M 5 0,15 NOM ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ 2,90 2,70 4,25 3,75 Gage Plane PIN 1 INDEX AREA 1 0,25 4 0° – 8° 3,15 2,75 0,60 0,20 1,30 MAX Seating Plane 0,10 0,10 0,00 NOTES: A. B. C. D. 4188781/C 09/02 All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion Falls within JEDEC MO-187 variation DA. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D: Max = 1.918 mm, Min =1.858 mm E: Max = 0.918 mm, Min =0.858 mm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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