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THS789PFD

THS789PFD

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    HTQFP100

  • 描述:

    IC TIME MEASUREMNT UNIT 100HTQFP

  • 数据手册
  • 价格&库存
THS789PFD 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 THS789 Quad-Channel Time Measurement Unit (TMU) 1 Features 3 Description • • • • • • The THS789 device is a version of the THS788 with a reduced number of features. 1 • • • Four Event Channels + Sync Channel Single-Shot Accuracy: 800 ps Precision: 100 ps Result Interface Range: –7 to 7 s Event Input Rate: 200 MHz High-Speed Serial Host-Processor Bus Interface: 50 MHz High-Speed LVDS-Compatible Serial-Result Bus per Channel Temperature Sensor Single 3.3-V Supply The THS789 is a four-channel timing measurement unit (TMU) that incorporates a time-to-digital converter (TDC) architecture for fast and accurate measurements. The TMU can provide less than 800 ps of single-shot accuracy. The TDC has 13 ps resolution (LSB), which is derived from an external master clock of 200 MHz. It uses fast LVDScompatible interfaces for all of its event inputs and serial result outputs, which allows for fast and reliable data transfer. Each channel can process timestamps at a maximum speed of 200 MSPS. The THS789 has a 40-bit serial-result interface that is operated at 300 MHz using single data rate clocking. The event channels can be programmed to take timestamps on rising edges or falling edges. Host programming is achieved through a 50-MHz LVCMOS interface. 2 Applications • • • • • • • • Automatic Test Equipment Benchtop Time-Measurement Equipment Radar and Sonar Medical Imaging Mass Spectroscopy Nuclear and Particle Physics Laser Distance Measurement Ultrasonic Flow Measurement The THS789 is available in a HTQFP-100 with a heat slug on top for easy heat-sink access. The device is built using TI's RF SiGe process technology, which allows for maximum timing accuracy with low power. Device Information PART NUMBER THS789 PACKAGE HTQFP (100) BODY SIZE (NOM) 14.00 mm × 14.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic SYNC EVENT T1 T2 T3 T1 - 0000 1100 T2 - 0011 1010 T3 - 1110 0010 T0429-01 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 5 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 5 5 5 5 6 7 7 7 7 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Host Serial Interface DC Characteristics .................. Host Serial Interface AC Characteristics................... Power Consumption.................................................. Typical Characteristics ............................................. Detailed Description .............................................. 8 7.1 Overview ................................................................... 8 7.2 Functional Block Diagram ......................................... 8 7.3 7.4 7.5 7.6 8 Feature Description................................................... 9 Device Functional Modes ....................................... 10 Programming .......................................................... 12 Register Maps ........................................................ 17 Application and Implementation ........................ 22 8.1 Application Information............................................ 22 8.2 Typical Application ................................................. 23 9 Power Supply Recommendations...................... 30 10 Layout................................................................... 30 10.1 Layout Guidelines ................................................. 30 10.2 Layout Example .................................................... 31 10.3 Thermal Considerations ........................................ 32 11 Device and Documentation Support ................. 33 11.1 11.2 11.3 11.4 Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 33 33 33 33 12 Mechanical, Packaging, and Orderable Information ........................................................... 33 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (September 2012) to Revision A Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 • Changed Thermal Information table ....................................................................................................................................... 5 • Updated decoupling capacitor values in Figure 16 ............................................................................................................. 32 2 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 5 Pin Configuration and Functions GND RstrobeA RstrobeA RdataA RdataA VCC NC 82 81 80 79 78 77 76 GND VCC 85 84 GND 86 83 GND VCC 87 GND VCC 90 89 Reserved 91 88 GND Reserved 92 GND RstrobeC 95 VCC RstrobeC 96 93 RdataC 97 94 VCC RdataC 98 NC 99 100 PFD Package 100-Pin HTQFP (Top View) GND 1 75 GND GND 2 74 GND NC 3 73 NC NC 4 72 NC NC 5 71 NC NC 6 70 NC VCC 7 69 VCC EventC 8 68 EventA NC 9 67 NC EventC 10 66 EventA GND 11 65 GND GND 12 64 GND 63 EventB THS789 EventD 13 NC 14 62 NC EventD 15 61 EventB VCC 16 60 VCC NC 17 59 NC NC 18 58 VCC 47 49 50 RdataB NC 46 RstrobeB 48 45 RCLK RdataB 44 RCLK RstrobeB 42 43 Hstrobe VCC 41 VCC GND 39 40 GND 37 38 VCC 36 VCC GND 34 35 GND Reset HCLK TEMP 51 33 52 25 Hdata 24 GND 32 Reserved GND OT ALARM 31 53 VCC 23 29 NC Reserved 30 GND 54 RstrobeD 55 22 RstrobeD 21 VCC 28 GND RdataD SYNC 27 SYNC 56 RdataD 57 20 26 19 NC MCLK MCLK P0011-03 Note: Pin 1 indicator is symbolized with a white dot, and is located near pin 1 corner. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 3 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Pin Functions PIN NAME TYPE NO. DESCRIPTION EventA 68 LVDS-compatible input Positive event input for channel A EventA 66 LVDS-compatible input Negative event input for channel A EventB 61 LVDS-compatible input Positive event input for channel B EventB 63 LVDS-compatible input Negative event input for channel B EventC 8 LVDS-compatible input Positive event input for channel C EventC 10 LVDS-compatible input Negative event input for channel C EventD 15 LVDS-compatible input Positive event input for channel D EventD 13 LVDS-compatible input Negative event input for channel D 1, 2, 11, 12, 21, 25, 32, 35, 37, 39, 42, 55, 64, 65, 74, 75, 82, 84, 85, Ground 87, 89, 92, 94 GND Chip ground HCLK 34 LVCMOS input Host serial-interface clock Hdata 33 LVCMOS I/O Host serial-interface data I/O Hstrobe 41 LVCMOS input Host serial-interface chip select MCLK 19 LVDS-compatible input Positive master-clock input MCLK 20 LVDS-compatible input Negative master-clock input No connect Physically not connected to silicon 3–6, 9, 14, 17, 18, 26, 50, 54, 59, 62, 67, 70–73, 76, 100 NC OT_ALARM 53 Open-drain output Overtemperature alarm RCLK 45 LVDS-compatible output Positive result-interface clock RCLK 44 LVDS-compatible output Negative result-interface clock RdataA 78 LVDS-compatible output Positive result-data output for channel A RdataA 79 LVDS-compatible output Negative result-data output for channel A RdataB 49 LVDS-compatible output Positive result-data output for channel B RdataB 48 LVDS-compatible output Negative result-data output for channel B RdataC 98 LVDS-compatible output Positive result-data output for channel C RdataC 97 LVDS-compatible output Negative result-data output for channel C RdataD 27 LVDS-compatible output Positive result-data output for channel D RdataD 28 LVDS-compatible output Negative result-data output for channel D 23, 24, 90, 91 Engineering or test pins Connect to VCC Reserved Reset 51 LVCMOS input Chip reset, active-low RstrobeA 80 LVDS-compatible output Positive strobe signal for channel A RstrobeA 81 LVDS-compatible output Negative strobe signal for channel A RstrobeB 47 LVDS-compatible output Positive strobe signal for channel B RstrobeB 46 LVDS-compatible output Negative strobe signal for channel B RstrobeC 96 LVDS-compatible output Positive strobe signal for channel C RstrobeC 95 LVDS-compatible output Negative strobe signal for channel C RstrobeD 29 LVDS-compatible output Positive strobe signal for channel D RstrobeD 30 LVDS-compatible output Negative strobe signal for channel D SYNC 57 LVDS-compatible input Positive input for sync channel SYNC 56 LVDS-compatible input Negative input for sync channel TEMP 52 Analog output Die temperature 7, 16, 22, 31, 36, 38, 40, 43, 58, 60, 69, 77, 83, 86, 88, 93, 99 Power supply Positive supply, nominal 3.3 V VCC 4 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 6 Specifications 6.1 Absolute Maximum Ratings over operating junction temperature range (unless otherwise noted) MIN VCC MAX UNIT 4 Analog I/O to GND (1) Digital I/O to GND V –0.3 VCC + 0.3 –0.3 VCC + 0.3 V V TJ Maximum junction temperature (2) 150 °C Tstg Storage temperature 150 °C (1) (2) LVDS outputs are not short-circuit-proof to GND. The THS789 device has an automatic power shutdown at 140°C, typical. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±250 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating junction temperature range (unless otherwise noted) MIN VCC Supply voltage TJ Junction temperature NOM 3.135 0 MAX UNIT 3.465 V 105 MCLOCK frequency °C 200 MHz 6.4 Thermal Information THS789 THERMAL METRIC (1) PFD (HTQFP) UNIT 100 PINS RθJA Junction-to-ambient thermal resistance 24.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 10.4 °C/W RθJB Junction-to-board thermal resistance 9.8 °C/W ψJT Junction-to-top characterization parameter 0.3 °C/W ψJB Junction-to-board characterization parameter 9.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.5 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 5 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 6.5 Electrical Characteristics Typical conditions are at TJ = 55°C and VCC = 3.3 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TDC CHARACTERISTICS Time-measurement precision (LSB) 13.02 Measurement accuracy after calibration, mean –800 Single-event accuracy, one sigma ps 800 ps 800 ps Time-measurement temperature coefficient 0.1 ps/°C Time-measurement voltage coefficient ±30 Event input rate Minimum event pulse duration ps/V 200 MHz 250 μs 250 ps Turnon time (ready to take timestamp) MASTER CLOCK CHARACTERISTICS Frequency 200 Duty cycle 0.4 MHz 0.6 Jitter 3 ps RMS HIGH-SPEED LVDS INPUTS: MCLK, EVENT, SYNC Differential input voltage 100-Ω termination, line-to-line 200 Common-mode voltage 350 500 1.25 Peak voltage, either input 0.6 Input capacitance mV V 1.7 1 V pF HIGH-SPEED LVDS OUTPUTS: Rdata, Rstrobe, RCLK Differential output voltage 100-Ω termination, line-to-line Common-mode voltage Rise time/fall time 250 325 400 1.125 1.28 1.375 20%/80% Output resistance mV V 250 ps 40 Ω TEMPERATURE SENSOR DC CHARACTERISTICS Output voltage TJ = 65°C 1.69 Output voltage temperature slope V 5 Max capacitive load mV/°C 30 pF Max resistive load 10 kΩ OVERTEMPERATURE ALARM DC CHARACTERISTICS Trip point Active-low pulldown Leakage current Temperature < trip point Output voltage, low Isink = 1 ma 141 °C μA 1 0.2 V OUTPUT INTERFACE TIMING RCLK duty cycle 45% 50% 55% Rdata/Rstrobe to RCLK setup time 300 MHz 1.4 ns Rdata/Rstrobe to RCLK hold time 300 MHz 1.5 ns OPERATING PARAMETERS Coarse counter range 34 bit Coarse counter max time range 14.31 Result-interface clock 300 Result-interface transfer format 40 Result-interface time range 6 –7.158 Submit Documentation Feedback s MHz bit 7.158 s Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 6.6 Host Serial Interface DC Characteristics over operating junction temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage 0.7 × VCC VCC + 0.5 V VIL Low-level input voltage GND – 0.3 0.3 × VCC V VOH High-level output voltage VCC – 0.5 VCC + 0.3 V VOL Low-level output voltage 0 0.4 V Ilkg Leakage current 1 µA MAX UNIT HCLK frequency 50 MHz Rise and fall times 3.5 ns 6.7 Host Serial Interface AC Characteristics over operating junction temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN HCLK duty cycle TYP 40% Hstrobe high period between two consecutive transactions 50% 60% 40 ns Hstrobe low to HCLK high setup 5 ns HCLK high to Hstrobe high hold time 5 ns Hdata in to HCLK high setup 5 ns Hdata in to HCLK high hold time 5 ns HCLK falling edge to Hdata out (L or H) CL = 20 pF 3.25 ns HCLK falling edge to Hdata out (H or L) CL = 20 pF 3.25 ns 6.8 Power Consumption Typical conditions are at 55°C junction temperature, VCC = 3.3 V. CONDITION Four channel current TYP MAX UNIT 925 1236 mA 6.9 Typical Characteristics 9 Sigma (ps) 8 7 6 5 4 3 0 1 2 3 4 Sync to Event Delay (ns) 5 6 Figure 1. Typical Per Channel Sigmas vs 5-ns (200-MHz) Window Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 7 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 7 Detailed Description 7.1 Overview The THS789 TMU includes four measurement channels plus a synchronization channel optimized to make highaccuracy time-interval measurements. The following is a brief description of the various circuit blocks and how they interact to make and process the time measurements. 7.2 Functional Block Diagram PLL RdataA RdataB DLL MCLK (Fixed) RdataC Sync Input RdataD RCLK Serial Result Data RstrobeA EventA Time Stamp Logic Event Logic EventB RstrobeB EventC RstrobeC EventD RstrobeD Reset Control Registers Hdata Host Interface Output (Voltage) TEMP OT_ALARM HCLK Serial Host Processor Interface Hstrobe Temp Sensor B0347-01 8 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 7.3 Feature Description 7.3.1 Counter, Latches, Clock Multiplier The center of the TMU is a master synchronous counter that counts continuously at a rate of 1.2 GHz. This is the master timing generator for the whole TMU and defines the basic timing interval of 833 ps, which is further subdivided with Interpolator circuitry. The output bits of the counter are connected to five sets of latches, which can latch and hold the counter state on command from each of the channels. In this way, when an event occurs, the counter time is recorded in the particular channel’s latches. The latch output is converted to CMOS levels and passed to the respective channel’s FIFO buffer, which is 15 samples deep. The counter 1.2-GHz clock is derived from the MCLK input to the TMU at 200 MHz. This MCLK input is critical to the accuracy of the TMU, and any error in frequency is reflected as errors in time measurement. Likewise, jitter propagates to the counter and other circuits and adds noise to the measurement accuracy. The 200-MHz clock is the input to a clock multiplier. The clock multiplier uses delay-lock loop (DLL) techniques and combinatorial logic to construct a six-times clock from the reference input. This 1.2-GHz clock is passed to a high-power clock buffer, which drives all the circuitry in the master counter and many other circuits in the TMU. 7.3.2 Channels, Interpolator There are four event channels and one sync channel. The event channels are identical, and the sync channel contains most of the event channel circuitry, but without a FIFO. An input pulse to the sync channel serves as the reference time zero for the TMU. An event input to a channel is compared to the sync time reference, and the time delay is calculated as the time difference modified by a calibration value. An event input follows the following signal path: the event input edge sets a fast latch (hit latch). The output of the latch is current-buffered and applied to the interpolator. The interpolator uses DLL techniques to subdivide the counter interval of 833 ps into 64 time intervals of 13 ps each. A large array of fast latches triggered by the hit latch captures the state of the 64 time intervals and logically determines 6 bits of timing data based on where the event occurred in the 833-ps clock interval. These 6 bits are latched and eventually passed to the FIFO, where they become the LSBs of the time-to-data conversion. A synchronizer circuit is also connected to the 64-latch array and removes the possible timing ambiguity between the 64 latches and the master counter. This takes a few 1.2-GHz clock pulses. When this process is complete, a pulse occurs which captures the master counter bits into the channel latches. A subsequent pulse loads all the bits from the interpolator and the counter into the channel FIFO. While this is happening, the hit latch is being reset, and the channel is prepared to accept another event edge. This process is fast enough to accept and measure event edges as close together as 5 ns. 7.3.3 FIFO Each event channel contains a 15-deep, 40-bit-wide FIFO, which allows for rapid accepting and measurement of event inputs and a user-defined data-output rate of those measurements. 7.3.4 Calibration, ALU, Tag, Shifter The output of the FIFO is controlled by the shifter, which is a free-running parallel-to-serial register. The shifter generates a load pulse, which transfers the data in the FIFO output into an arithmetic logic unit, which does the sync time and calibration time subtractions and then parallel-loads the result into the output serial register. An LVDS output buffer outputs the clock, data, and strobe signals to transfer the time-measurement data to the user. A TAG bit is appended to the leading edge of the data word. Currently the TAG feature is not implemented. The bit will always be 0 representing data. 7.3.5 Serial Interface, Temperature, Overhead The TMU functions and options are controlled and read out by a serial interface built in CMOS logic that can operate up to 50 MB/s. There is one central controller which then drives registers, counters, and so on, in each channel. A temperature sensor is located central to the chip and outputs a voltage proportional to the chip temperature. If the chip temperature rises above 141°C, the TMU powers down and outputs an overtemperature alarm signal. The TMU does not restart without a command through the serial interface. A bias circuit provides a regulated current bias and voltage reference for the TMU. The serial controller sequences some of the bias circuits to account for some acquisition times, and thereby, turns on the TMU. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 9 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 7.4 Device Functional Modes 7.4.1 Serial-Results Interface The TMU captures time-stamp results and sends them to external logic using an LVDS serial-results port. The serial-results port consists of a clock signal (RCLK), four strobe signals (Rstrobex) and four data signals (Rdatax). The Rstrobex signal indicates that a time-stamp data transfer is about to begin for the corresponding channel. Table 1 shows the results transfer format and time range. Table 1. Result Transfer Format and Time Range RESULT TRANSFER FORMAT TIME RANGE 40 bits –7.158 s to 7.158 s 7.4.2 Resister Map Descriptions for All Channels and Central Register Table 2. Control and Status Register Descriptions for All Channels Register Bit 0 00h 20h 40h 60h 1 2 Name Function LogicState Description Enable or disable channel X by powering down the channel. Time to enable a channel is 200 μs. 0 Channel is disabled 1 Channel is enabled ChX_IP_EN Enables or disables the input of channel X. Events are prevented from entering a channel. 0 Input is disabled 1 Input is enabled Pol_X Defines the polarity of the event inputX for the upcoming timestamp generation. 0 Positive edge 1 Negative edge En_ChX Table 3. Control and Status Register Descriptions for All Channels Register 01h 21h 41h 61h 04h 24h 44h 64h Bit Function Logic State Description Reserved Reserved x 1 Unused Unused x 2 Unused Unused x 3 Unused Unused x 4 Unused Unused x 5 Reserved Reserved 0 0 DLL_Lock_X Indicates the DLL lock status for channel X. 2 Reserved Reserved x 3 FIFO_Full_X Indicates that the FIFO is full. Timestamps arriving while FIFO is full are lost. 0 FIFO not full 1 FIFO full 0 FIFO not empty 1 FIFO empty 4 10 Name 0 FIFO_Empty_X Indicates that the FIFO is empty. Submit Documentation Feedback 0 DLL locked 1 DLL not locked Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 Table 4. Central Control and Status Registers Description Register Bit 0 80h TEST_En Function Enables or disables factory test routines. Logic State Disabled 1 Enabled 0 RESET Reset the device. Device is fully operational after 250 μs. 2 Reserved Reserved 0 3 Reserved Reserved 0 4 Reserved Reserved 0 5 Reserved Reserved 0 6 Reserved Reserved 0 7 Reserved Reserved 1 8 Reserved Reserved 0 9 Reserved Reserved 1 10 OT_En Enables or disables the over temperature alarm circuits. RST_OT_ALM Resets the temperature alarm. 12 SYNC_TS_Pol Defines the polarity of the Sync input for the upcoming timestamp generation. 13 SYNC_IP_ENI Enables or disables the sync channel 14 PWR_DN Powers down the device Description 0 1 11 81h Name 1 Reset 0 Disabled 1 Enabled 0 1 Reset alarm state 0 Positive edge 1 Negative edge 0 Sync disabled 1 Sync enabled 0 Powered up 1 Powered down 0 Disabled 1 Enabled 15 RCLK_En Enables RCLK 1 Reserved Reserved 1 N/A 2 Reserved Reserved 1 N/A Normal mode 3 Quiet_Mod It disables the RCLK and digital clks internal during timestamp process. Allows for only 16 timestamps. 0 1 Quiet mode 0 TMU_Ready Indicates that the internal clks, coarse counter and Sync channel are operational. 0 Device is not ready 1 Device is ready Over temperature alarm. Indicates that the junction temperature is 140°C. 0 No alarm 1 Alarm is enabled 0 DLL is locked 1 DLL is not locked 0 DLL is locked 1 DLL is not locked 1 OT_ALM 82h 2 3 DLL_Lock_Sync DLL_Lock_1G2 Indicates the Sync channel DLL lock status. Indicates the lock status of the 1.2-GHz internal clock. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 11 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 7.5 Programming 7.5.1 Host Processor Bus Interface The THS789 device includes a high-speed serial interface to a host processor. The host interface is used for writing or reading registers that reside in the TMU chip. These registers allow configuration of the device functions. All registers are capable of both read and write operations unless otherwise stated. 7.5.1.1 Serial Interface The TMU serial interface operates at speeds of up to 50 MHz. Register addresses are 8 bits long. Data words are 16 bits wide, enabling more-efficient interface transactions. The serial bus implementation uses three LVCMOS signals: HCLK, Hstrobe, and Hdata. The HCLK and Hstrobe signals are inputs only, and the Hdata signal is bidirectional. The HCLK signal is not required to run continuously. Thus, the host processor may disable the clock by setting it to a low state after the completion of any required register accesses. When data is transferred into the device, Hdata is configured as an input bus, and data is latched on a rising edge of HCLK. When data is transferred out of the part, Hdata is configured as an output bus, and data is updated on the falling edge of HCLK. Hstrobe is the control signal that identifies the beginning of a host bus transaction. Hstrobe must remain low for the duration of the transaction, and must go high for at least two clock cycles before another transaction can begin. 7.5.1.2 Read vs Write Cycle The first Hdata bit latched by HCLK in a transaction identifies the transaction type. First Hdata bit = 1 for read; data flows out of the chip. First Hdata bit = 0 for write; data flows into the chip. 7.5.1.3 Parallel (Broadcast) Write Parallel write is a means of allowing identical data to be transferred to more than one channel in one transaction. The second Hdata bit of a transaction indicates whether a parallel write occurs. Second Hdata bit = 0; data goes to the selected channel. Second Hdata bit = 1; data goes to all four channels. 7.5.1.4 Address After the R/W bit and the parallel write bit, the following 8 bits on the Hdata line contain the source address of the data word for a read cycle or the destination address of the data word for a write cycle. Address bits are shifted in MSB first, LSB last. Third HCLK – Address Bit 7 (MSB) Tenth HCLK – Address Bit 0 (LSB) 7.5.1.5 Data The data stream is 16 bits long, and it is loaded or read back MSB first, LSB last. The timing for read and write cycles is different, as the drivers on Hdata alternate between going into high-impedance and driving the line. 7.5.1.6 Reset Reset is an external hardware signal that places all internal registers and control lines into their default states. The THS789 device resets after a power-up sequence (POR). Hardware reset is an LVCMOS active-low signal and is required to stay low for approximately 100 ns. Reset places the TMU in a predetermined idle state at power on, and anytime the system software initializes the system hardware. In the idle state, the TMU ignores state changes on the Event inputs and never creates timestamps. The TMU is capable of switching within 250 μs from the idle state to a state that creates accurate timestamps. 12 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 Programming (continued) 7.5.1.7 Chip ID Address (83h) is a read-only register that identifies the product and the die revision. The 16-bit register is divided into two 8-bit sections. The LSB represents the revision history and the MSB represents the last two digits of THS789 device (that is, 80). The first revision (1.0) is as follows: 1000 0000 0001.0000 7.5.1.8 Read Operations Reading the THS789 device registers via the host interface requires the following sequence: The host controller initiates a read cycle by setting the host strobe signal, Hstrobe, to a low state. The serial Hdata sequence starts with a high R/W bit, followed by (either 1 or 0) for parallel-write bit and 8 bits of address, with most-significant bit (A7) first. The host controller should put the Hdata signal in the high-impedance state beginning at the falling edge of HCLK pulse 10. The THS789 device allows one clock cycle, (r0) for the host to reverse the data-channel direction and begins driving the Hdata line on the falling edge of HCLK pulse 11. The data is read beginning with the most-significant bit (D15) and ending with the least-significant bit (D0). The host must drive Hstrobe to a high state for a minimum of two HCLK periods beginning at the falling edge of HCLK pulse 27 to indicate the completion of the read cycle. Figure 2 shows the timing diagram of the read operation. Hstrobe 1 2 R/W 1 X 3 4 5 6 7 8 9 10 11 A7 A6 A5 A4 A3 A2 A1 A0 r0 12 13 14 15 D15 D14 D13 D12 16 17 D11 D10 18 27 28 29 X X HCLK Hdata Register Address (A7:A0) D0 D9 R/W Data Out Hdata becomes output Driving the line Data transfer protocol for Read operations T0427-01 Figure 2. Read Operation 7.5.1.9 Write Operations Writing into the THS789 device registers via the host interface requires the following sequence: After the Hstrobe line is pulled low (start condition), the R/W bit is set low, followed by a 0 for the parallel-write bit (single-register write), then the memory address (A7–A0) followed by the data (D15:D0) to be programmed. The next clock cycle (w) is required to allow data to be latched and stored at the destination address (or addresses in the case of a parallel write), followed by at least two dummy clock cycles during which the Hstrobe is high, indicating the completion of the write cycle. Figure 3 and Figure 3 show timing diagrams of write operations. Hstrobe st 1 2 3 4 A7 A6 5 6 7 8 9 10 11 12 13 14 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 24 25 26 27 28 29 1 clock for next transaction = 30 HCLK Hdata R/W 1 0 Register Address (A7:A0) D2 D1 D0 w0 X X R/W Data In Data transfer protocol for single write operation T0425-01 Figure 3. Write Operation Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 13 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Programming (continued) 7.5.1.10 Write Operations to Multiple Destinations This is similar to the single-write operation except the parallel-load bit is set to 1. Hstrobe st 1 2 3 4 A7 A6 5 6 7 8 9 10 11 12 13 14 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 24 25 26 27 28 29 1 clock for next transaction = 30 HCLK Hdata R/W 1 1 Register Address (A7:A0) D2 D1 D0 w0 X X R/W Data In Data transfer protocol for parallel write operation T0426-01 Figure 4. Write Operations to Multiple Destinations 7.5.2 Serial-Results Interface and ALU 7.5.2.1 Event Latches A selectable rising or falling edge of an event pulse sets the latch. The latch remains set until the interpolator has finished processing the event, at which time the interpolator resets the latch. The latch, however, does not accept another event pulse until the event input returns to its initial state and remains for the initial event-pulse duration. Any event transitions which occur before the interpolator has completed processing the previous event are ignored. For example, assume that rising edge is selected. Two rising edges can occur as quickly as 5 ns apart. The falling edge can occur anywhere from 250 ps after the rising edge to 250 ps before the next rising edge. Any other edges or glitches are ignored. 7.5.2.2 FIFO Timestamps are written to a FIFO at high speed and read for further processing at a lower speed before being sent to the result interface. This FIFO is 15 bits deep and 40 bits wide. There are four FIFOs in THS789 device, one for each channel. There are two status registers (FIFO_Full_x and FIFO_Empty_x), which are set when a FIFO reaches its full capacity and when it is empty, respectively. Timestamps are taken and loaded into the FIFO as events occur. Timestamps are mathematically processed by an arithmetic logic unit (ALU) which calculates the difference between the event and the sync timestamps and factors in the appropriate calibration value from the calibration register. The ALU operates on the data as it is read out of the FIFO and sent out through the serial-results interface. The serial-results interface controls the output of the FIFO. 7.5.2.3 Result-Interface Operation The TMU initiates a read cycle by setting the strobe signal, Rstrobe, to a low state, indicating that the data transfer is about to begin. The serial Rdata sequence starts with a TAG bit, followed by the 40-bit data (R0 to R39). R39 (MSB) is the sign bit. Following the last data bit (R39), the strobe signal (Rstrobe) goes high for two clock cycles, indicating the end of the transaction. The data is clocked out of the TMU on the rising edge of RCLK. The receiving device clocks the data in on the rising edge of RCLK. Figure 5 shows a 40-bit result on the result interface. 14 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 Programming (continued) Rstrobe RCLK Rdata 0 0 0 R0 R1 R2 R3 R4 R5 R34 R35 R36 R37 R38 R39 Result Data Sign bit when programmed TAG TAG = 0, Valid Data 0 0 0 Cycle End R0 R1 R2 R3 R4 R5 R6 R7 New Cycle T0428-01 Figure 5. Result-Interface Operation A NOTE In Figure 5, only RCLK_P is drawn to indicate the correct edge with respect to data. NOTE The THS788/789 TMU generates a result data ready strobe signal (RSTROBEx). RSTROBEx asserts when data is driven out from the serial shift register in channel x. Where x represents channel A,B,C, or D. The RSTROBEx signals intended to drive active low differential signal indicating start and completion of data on the RDATAx serial output. There are some circumstances that cause the RSTROBEx signal to deassert one RCLK cycle early. This behavior remains consistent for each channel after powerup or a reset. To workaround this potential issue, it is recommended to use leading edge of RSTROBEx assertion, and capture the correct number of results bits independent of the deassertion of RSTROBEx. 7.5.2.4 Serial Results Latency The event stored in the FIFO will be transferred to ALU and subsequently to the free running results data shift register when the shift register enters a load pulse. The load pulse is generated once per ALU/shift register processing cycle. The load pulse will trigger the ALU and transfer result to the parallel to serial shift register for output. The cycle time of the load pulse is dependent upon the depth of the result transfer register and data rate. Because the results parallel to serial register are free running, the load pulse will be asynchronous to the actual event. So, the latency will depend upon where in the current cycle the load pulse occurred relative to the event being captured into the FIFO. The worst case for data to be output from serial bus: Tevent + 5(Rclkcycles) + (Rdatalength + 3) x Rclkcycles + (Rdatalength + 3) × Rclkcycles (1) The best case for data to be output from serial bus: Tevent + 5(Rclkcycles) + (Rdatalength + 3) × Rclkcycles where • • • • Tevent = 5 ns (minimum repeat capture time) 5(Rclkcycles) = number cycles for FIFO to ALU to Shift register Rclkcycles is period of RCLK data = 300 MHz, SDR = 3.33 ns Rdatalength = number of results bits = 40 for THS789 device (2) In the case where RCLK = 300 MHz, with 40-bit serial result: Min Latency = 5 ns + 17 ns + (40 + 3) × 3.33 ns = 165 ns Max Latency = 5 ns + 17 ns + (40 + 3) × 3.33 ns + (40 + 3) × 3.33 ns = 308 ns (3) (4) Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 15 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Programming (continued) NOTE The THS789 device was intended for sync-event, event, event, sync-event ... processing. However, some applications desire the use of a sync pulse that is a fixed period. During a sync period, there could be multiple events, or no events. The TMU can be used effectively for this scenario as well. For applications using the THS789 device in this fashion, it is important to consider the uncertainty that is introduced by the load pulse timing. Because the load pulse is free running and asynchronous to any events, the latency will vary based on this timing. Additionally, the load pulse is the mechanism that will cause the ALU to grab the current sync value for the result calculation. If an event is in the FIFO, waiting for the load pulse and a new sync occurs, the ALU will use the new sync value for calculating the result. In this case, the event would precede the sync resulting in a negative result. The system could then offset the result by one sync cycle as the result is negative, indicating that is was captured during a prior sync cycle. 7.5.2.5 TMU Calibration The TMU calibration process is identical to a normal TMU time-stamp measurement. The process involves measuring a known interval and calculating the difference between the measured value and the actual value. The result is then stored into calibration registers inside the TMU. The TMU takes the stored calibration values and corrects the subsequent time-stamp measurements. There are four calibration registers for each channel. These are identified as follows: • A calibration register for positive sync edge and positive event edge • A calibration register for positive sync edge and negative event edge • A calibration register for negative sync edge and positive event edge • A calibration register for negative sync edge and negative event edge Calibration due to temperature changes following the initial system calibration may be required if temperature variations are significant. 7.5.2.6 Temperature Sensor A temperature sensor has been located centrally in the THS789 device for monitoring the die temperature. There are two monitor outputs for this feature. An analog voltage proportional to the die temperature is presented at the TEMP pin. Also, an overtemperature alarm output is available at the OT_ALARM pin. The overtemperature alarm (OT_ALARM) is an open-drain output that is activated when the die temperature reaches 141°C. The overtemperature alarm sets a register bit (OT_ALM) in the central register and may be accessed through the serial interface. The overtemperature alarm initiates an automatic power down to prevent overheating of the device. The digital blocks remain functional when in automatic power down. Following a power down, the user is required to reset OT_ALM using the serial interface. A register bit (RST_OT_ALM) is used for this purpose. The temperature-monitoring function and its associated overtemperarture alarm circuit may be disabled by the user, using a register bit (OT_EN). The default for the temperature-monitoring function is disabled. OT_EN = 1: Temperature-monitoring function is enabled. OT_EN = 0: Temperature-monitoring function is disabled. 16 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 7.6 Register Maps 7.6.1 Register Address Space Table 5. Channel-A Registers Address (Hex) Register 00h–01h Control register 02h–03h Not used NA 04h Status registers RO 05h Not used NA 06h Not used R/W 07h Not used R/W 08h Not used R/W 09h Not used R/W 0Ah Not used R/W 0Bh Not used R/W 0Ch Positive edge sync and positive edge hit calibration register, 16 bits R/W 0Dh Positive edge sync and negative edge hit calibration register, 16 bits R/W 0Eh Negative edge sync and positive edge hit calibration register, 16 bits R/W 0Fh Negative edge sync and negative edge hit calibration register, 16 bits R/W 10h–12h Timestamp register, 40 bits 13h–1Fh Not used R/W R NA Table 6. Channel-B Registers Address (Hex) Register 20h–21h Control register 22h–23h Not used NA 24h Status registers RO 25h Not used NA 26h Not used R/W 27h Not used R/W 28h Not used R/W 29h Not used R/W 2Ah Not used R/W 2Bh Not used R/W 2Ch Positive edge sync and positive edge hit calibration register, 16 bits R/W 2Dh Positive edge sync and negative edge hit calibration register, 16 bits R/W 2Eh Negative edge sync and positive edge hit calibration register, 16 bits R/W 2Fh Negative edge sync and negative edge hit calibration register, 16 bits R/W 30h–32h Timestamp register, 40 bits 33h–3Fh Not used R/W R NA Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 17 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Table 7. Channel-C Registers Address (Hex) Register 40h–41h Control register 42h–43h Not used NA 44h Status registers RO 45h Not used NA 46h Not used R/W 47h Not used R/W 48h Not used R/W 49h Not used R/W 4Ah Not used R/W 4Bh Not used R/W 4Ch Positive edge sync and positive edge hit calibration register, 16 bits R/W 4Dh Positive edge sync and negative edge hit Calibration register, 16 bits R/W 4Eh Negative edge sync and positive edge hit Calibration register, 16 bits R/W 4Fh Negative edge sync and negative edge hit Calibration register, 16 bits R/W 50h–52h Timestamp register, 40 bits 53h–5Fh Not used R/W R NA Table 8. Channel-D Registers Address (hex) Register 60h-61h Control register 62h-63h Not used NA 64h Status registers RO 65h Not used NA 66h Not used R/W 67h Not used R/W 68h Not used R/W 69h Not used R/W 6Ah Not used R/W 6Bh Not used R/W 6Ch Positive sync edge and positive hit edge, calibration register, 16 bits R/W 6Dh Positive sync edge and negative hit edge, calibration register, 16 bits R/W 6Eh Negative sync edge and positive hit edge, calibration register, 16 bits R/W 6Fh Negative sync edge and negative hit edge, calibration register, 16 bits R/W 71h-73h Timestamp register, 40 bits 74h-7Fh Not used R/W R NA Table 9. Central Registers Address (hex) Register 80h Control register R/W 81h Control register R/W 82h Status register RO 83h Chip ID RO 84h Test key register R/W 85h Test1 R/W 86h Test2 R/W 87h Reserved R/W 88h Reserved R/W 18 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 7.6.2 Register Map Detail Table 10. Channel A Word/Bit 4 3 X X X X X X X X 0 X X X 04h Status X X X X X X X X X X X X 06h Reserved X X X X X X X X X X X X X X 0Ch Calibration:Pos Sync EdgePos Event Edge 0Dh Calibration:Pos Sync EdgeNeg Event Edge 0Eh Calibration:Neg Sync EdgePos Event Edge 0Fh Calibration:Neg Sync EdgeNeg Event Edge 10h Timestamp X 0 0000h X 0000h X X 0000h 2 1 0 0 0 0 0000h X X X X 0 0000h X 0000h X X 0000h D1 D1 D1 D1 D2 D2 D2 D2 D3 D3 D3 D3 D4 D4 D4 D4 D5 D5 D5 D5 D6 D6 D6 D6 D7 D7 D7 D7 D39 D23 D8 D8 D8 D8 D9 D9 D9 D8 0 D9 0 D1 3 0 D2 4 0 D3 5 0 D4 6 0 D5 7 0 D6 8 0 D7 9 D24 15 14 13 12 11 10 D25 0000h D26 D10 D10 D10 D10 D10 0000h D27 D11 D11 D11 D11 D11 0000h D28 D12 D12 D12 D12 D12 0000h D29 D13 D13 D13 D13 D13 0000h D30 D14 D14 D14 D14 D14 0000h D31 D15 D15 D15 D15 D15 D0 X D0 X 0000h D0 0 D0 0 D0 0 D32 D16 0 En_ChB X DLL_Lock_B X D33 D17 X ChB_IP_En 0 D34 D18 Control 12h 0 Pol_B 01h 11h 0 D35 D19 X Default Value D36 D20 X 0 D37 D21 Control 1 D38 D22 00h 2 En_ChA 5 DLL_Lock_A 6 ChA_IP_En 7 Pol_A 8 FIFO_Full_A 9 FIFO_Empty_A 15 14 13 12 11 10 D9 Register Name 0n_A Register Address 0000h Table 11. Channel B X X X 0 X X X X X X 26h Reserved X X X X X X X X X X X X X X 2Ch Calibration:Pos Sync EdgePos Event Edge 2Dh Calibration:Pos Sync EdgeNeg Event Edge 2Eh Calibration:Neg Sync EdgePos Event Edge 2Fh Calibration:Neg Sync EdgeNeg Event Edge D2 D2 D2 D3 D3 D3 D4 D4 D4 D5 D5 D5 D6 D6 D6 D7 D7 D7 D8 D8 D8 D9 D9 D9 D0 X X 0000h D0 X X 0000h D0 X X Default Value 0000h D0 X X D1 X X D1 X X D1 X Status D2 Control 24h D3 21h D4 0 D5 X D6 X D7 X D8 0 D9 0 D10 D10 D10 D10 0 D11 D11 D11 D11 0 D12 D12 D12 D12 X D13 D13 D13 D13 X D14 D14 D14 D14 Control D15 D15 D15 D15 20h FIFO_Full_B Word/Bit FIFO_Empty_B Register Name D1 Register Address 0000h Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 19 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Table 11. Channel B (continued) Default Value 2 1 0 D39 D23 D8 0 D9 0 D1 3 0 D2 4 0 D3 5 0 D4 6 0 D5 7 0 D6 8 0 D7 9 D24 15 14 13 12 11 10 D25 0000h D26 D10 D0 0 D32 D16 1 D33 D17 2 D34 D18 3 D35 D19 4 D36 D20 5 D37 D21 6 D38 D22 7 0000h D27 D11 32h 8 D28 D12 31h 9 D29 D13 Timestamp Word/Bit 15 14 13 12 11 10 D30 D14 30h Register Name D31 D15 Register Address 0000h Table 12. Channel C Pol_C 41h Control X X X X X X X X X X 0 X X X 44h Status X X X X X X X X X X X X 46h Reserved X X X X X X X X X X X X X X 4Ch Calibration:Pos Sync EdgePos Event Edge 4Dh Calibration:Pos Sync EdgeNeg Event Edge 4Eh Calibration:Neg Sync EdgePos Event Edge 4Fh Calibration:Neg Sync EdgeNeg Event Edge 50h Timestamp X 0 0000h X 0000h X X 0000h 2 1 0 D1 D1 D1 D2 D2 D2 D2 D3 D3 D3 D3 D4 D4 D4 D4 D5 D5 D5 D5 D6 D6 D6 D6 D7 D7 D7 D7 D39 D23 D8 D8 D8 D8 D9 D9 D9 D9 D8 0 D9 0 D1 3 0 D2 4 0 D3 5 0 D4 6 0 D5 7 0 D6 8 0 D7 9 D24 15 14 13 12 11 10 D25 0000h D26 D10 D10 D10 D10 D10 0000h D27 D11 D11 D11 D11 D11 0000h D28 D12 D12 D12 D12 D12 0000h D29 D13 D13 D13 D13 D13 0000h D30 D14 D14 D14 D14 D14 52h 0000h 0000h D31 D15 D15 D15 D15 D15 51h En_ChC 0 DLL_Lock_C 0 D0 0 D0 0 D0 X D0 X D0 X D32 D16 0 ChC_IP_En 0 D33 D17 0 D34 D18 0 D35 D19 X D36 D20 X D37 D21 Control Default Value D38 D22 40h FIFO_Full_C Word/Bit FIFO_Empty_C Register Name D1 Register Address 0000h Table 13. Channel D X X 0 0 0 0 X X X 0 0 0 0 Pol_D 61h Control X X X X X X X X X X 0 X X X 64h Status X X X X X X X X X X X X 66h Reserved X X X X X X X X X X X X X X 20 Submit Documentation Feedback En_ChD Control Default Value 0000h X 0 0000h X DLL_Lock_D 60h FIFO_Full_D Word/Bit FIFO_Empty_D Register Name ChD_IP_En Register Address 0000h X X 0000h Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 Table 13. Channel D (continued) D0 D0 D0 D0 D0 D32 D16 3 2 1 0 0 1 0 0 0 0 1 D1 D1 D1 D1 D2 D2 D2 D2 D3 D3 D3 D3 D4 D4 D4 D4 D5 D5 D5 D5 D6 D6 D6 D6 D38 D22 D7 D7 D7 D7 D8 D8 D8 D8 D8 0 D1 D33 D17 4 0 D2 D34 D18 5 0 D3 6 0 D4 7 0 D5 8 0 D6 9 0 D7 D35 D19 Default Value D36 D20 0 D37 D21 1 15 14 13 12 11 10 0 D39 D23 72h 2 0000h D24 71h 3 0000h D9 Timestamp D9 70h 4 0000h D9 Calibration:Neg Sync EdgeNeg Event Edge D9 6Fh 5 0000h D9 Calibration:Neg Sync EdgePos Event Edge D25 6Eh 6 0000h D26 D10 D10 D10 D10 D10 Calibration:Pos Sync EdgeNeg Event Edge 7 0000h D27 D11 D11 D11 D11 D11 6Dh 8 D28 D12 D12 D12 D12 D12 Calibration:Pos Sync EdgePos Event Edge 9 D29 D13 D13 D13 D13 D13 6Ch Word/Bit 15 14 13 12 11 10 D30 D14 D14 D14 D14 D14 Register Name D31 D15 D15 D15 D15 D15 Register Address 0000h Table 14. Central Registers X X X X 82h Status X X X X X X X X X X X X 83h Chip ID ID ID ID ID ID ID ID ID Test_En X X 0000h TMU_Ready X 0000h Rev X RESET X OT_ALM CNT_Rng0 X Default Value 0000h 8010h Rev X Rev DLL_Lock_Sync CNT_Rng1 X Quiet_Mod OT_En X DLL_Lock_1G2 RST_OT_ALM Control Rev Sync_TS_Pol 81h Rev Sync_IP_En 1 Rev Control Rev 80h PWR_DN Word/Bit RCLK_En Register Name Rev Register Address Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 21 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The THS789 device is a high-speed, high-resolution time-measurement unit that measures the difference in time between a signal applied to an event channel and the signal applied to the sync channel. This difference is then transmitted to a result interface in the form of a digital word. Figure 6 shows an example of three time measurements (T1, T2, and T3). SYNC EVENT T1 T2 T3 T1 - 0000 1100 T2 - 0011 1010 T3 - 1110 0010 T0429-01 Figure 6. Time-Measurement Example With 8-Bit Words Triggered by Rising Edges The previous time difference is calculated by an internal ALU that subtracts the timestamps created by the Event signal and the SYNC signal stored in a FIFO. These timestamps are performed by the TDC that is composed by the following: an interpolator, a synchronizer, a 34-bit counter, and a 1.2-GHz clock. It is important to note that the event and sync channels share the same TDC. When a valid edge is applied to the event channel, the TDC uses the value in the counter and stores it in the FIFO. Then the ALU uses the value of the event and the value of the sync, stored in the FIFO already, and subtracts them. After the operation is done, the final value is shifted out to the result interface for retrieval. All the programming to the THS789 device is achieved through an LVCMOS host-serial interface. With this interface, the user has the ability to set up the THS789 device for time measurements. It also provides the user with different modes to retrieve the results. Results are available through an LVDS-compatible high-speed serial interface. Data-word length and speed are programmable to cover a wide range of data rates. Each channel has it own output to maximize data throughput. All of the data ports (RdataA, -B, -C, and -D) are synchronized to a global clock. 22 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 8.2 Typical Application Time Stamp Processor Sequencer Formatter Timing Logic Error Logic PLL RdataA RdataB MCLK (Fixed) DLL RdataC Sync Input RdataD RCLK Serial Result Data EventA Time Stamp Logic RstrobeA EventB Event Logic DCL/PPMU RstrobeB EventC RstrobeC EventD DUT RstrobeD Reset Control Registers Hdata Host Interface Output (Voltage) TEMP OT_ALARM HCLK Hstrobe Serial Host Processor Interface Temp Sensor B0387-01 Figure 7. Example of Application Diagram in ATE Environment 8.2.1 Design Requirements For this design example, use the parameters listed in Table 15 as the input parameters. Table 15. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Results interface size 40 bit Results time range –7.158 to 7.158 s Rclock 300 MHz DDR mode Off Temperature monitor On Connect CD/Connect AB Off Counter size 34 bit REGISTER WRITE (80h) 0xA680 REGISTER WRITE (81h) 0x0003 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 23 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 8.2.2 Detailed Design Procedures 8.2.2.1 Time Measurement Time measurements in the THS789 device follow the timing of Figure 8. This diagram illustrates that time measurements are valid as long as events do not happen at speeds higher than 200 MHz. If an event happens at less than 5 ns from the previous one, then this event is ignored. The same applies to the SYNC signal. Even though the minimum period is 5 ns, the pulse duration of both Event and SYNC signals can be as low as 200 ps. SYNC 200 ps Min PW Max Freq. 200 MHz EVENT T1 T2 T3 T0430-01 Figure 8. Time-Measurement Example at Maximum Retrigger Rate and Minimum Pulse Duration The TH788 is capable of making time measurements using any combination of rising-falling edge between Event and SYNC. The example in Figure 8 uses rising edges only to trigger the time measurement. Table 16 describes what registers bits must be programmed to achieve the desired combination. Registers to be programmed are 00h, 20h, 40h, and 60h for event channels and 80h for the sync channel. The examples in Figure 9 illustrate the other three combinations. All of the channels can be programmed individually with respect to the sync channel. 24 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 Table 16. Trigger Polarity Programmability REGISTER BITS TRIGGER POLARITY FROM SYNC TO EVENT SYNC_TS_Pol Pol_X 0 0 Pos to Pos 0 1 Pos to Neg 1 0 Neg to Pos 1 1 Neg to Neg SYNC SYNC SYNC_TS_Pol = 1 Pol_X = 0 SYNC_TS_Pol = 0 Pol_X = 1 EVENT EVENT T1 T3 T2 T1 SYNC SYNC_TS_Pol = 1 Pol_X = 1 EVENT T1 T2 T0431-01 Figure 9. Time-Measurement Examples With Different Edge Polarities 8.2.2.2 Output Clock to Data/Strobe Phasing The output of each channel is an Rdata and Rstrobe signal. The RCLK for all the channels is a common output. Operating at 300 MHz, these signals must be handled carefully. Particularly important are the termination and phase alignment of the signals at the receiving circuitry. Termination has been discussed previously. Phase alignment is now discussed: The two outputs from each channel are clocked out through identical flip-flops with the same internal clock. Data and strobe output edges from a particular channel match well (< 50 ps). The match channel-to-channel is not as good due to the greater wiring distances internal to the TMU. However, the total time difference is below 125 ps. Because the RClock is a common output, the wiring lengths from the four channels must be matched and controlled to achieve good setup and hold times at the input to the receiving circuit. The RClock rising edge is adjusted internal to the TMU to be close to the center of the eye diagram of the data/strobe signals. (The internal clock has a good 50/50 duty cycle. The rising edge clocks out the data/strobe. The falling edge is inverted and used as the RClock after appropriate adjustments for the internal propagation delay times.) The receiving circuitry requirements for setup and hold timing must be carefully examined for the proper timing. Delays may be added to the PCB microstrips to adjust timing. A good rule is 125 ps of delay per inch of microstrip length. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 25 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 8.2.2.3 Master Clock Input and Clock Multiplier All of the internal timing of the TMU is derived from the 200-MHz master clock. Therefore, its quality is critical to the accurate operation of the TMU. Absolute accuracy of the master clock linearly affects the accuracy of the measurements. This imposes little burden upon the master clock, as accurate oscillators are easy to procure or distribute. However, the jitter of the master clock is also highly critical to the single-event precision of the TMU and should be absolutely minimized (< 3-ps RMS). A carefully selected crystal oscillator can meet this requirement. However, jitter can build up quite quickly in a clock distribution scheme and must be carefully controlled. Be careful that the LVDS input to the master clock is not badly distorted or that the rise and fall times are slow (> 0.6 ns). Discussion of the clock multiplier follows: The TMU operates from a master-clock frequency of 1200 MHz, which implies a measurement period of 0.833 ns. The master counter runs from this frequency, and all the other clocks are divided down from this main clock. An interpolator allows finer precision in time measurement, as discussed elsewhere. The clock multiplier is the circuit that takes the 200-MHz master-clock reference and generates from that the high quality 1200-MHz clock. The clock multiplier consists of five major sections: First is the delay-lock loop (DLL), which is a series connection of 12 identical and closely matched variable time-delay circuits. A single control voltage connects to each of the delay elements. The master 200-MHz clock connects to the input of the DLL. Because the period of 200 MHz is 5 ns, if the control voltage is adjusted to make the time delay of the DLL equal to 5 ns, the input and the output of the delay line is exactly phase matched. A phase detector connected to the input and the output of the delay line can sense this condition accurately, and a feedback loop with a lowoffset-error amplifier is included in the clock multiplier to achieve this result. These are the second and third circuit blocks. With 12 equally spaced 200-MHz clock phases, select out six equally spaced 833-ps-wide pulses with AND gates and combine these pulses into a single 1200-MHz clock waveform with a six-input OR gate. The last circuit element is a powerful differential signal buffer to distribute the 1200-MHz clock to the various circuit elements in the TMU. The DLL feedback loop is fairly narrowband, so some time is required to allow the DLL to initialize at start-up (about 100 μs, typical). The DLL is insensitive to the duty cycle of the input 200-MHz clock. Duty cycles of 40/60 to 60/40 are acceptable. What matters most is as little jitter as possible. 8.2.2.4 Temperature Measurement and Alarm Circuit Chip temperature of the TMU is monitored by a temperature sensor located near the center of the chip. A small buffer outputs a voltage proportional to the absolute temperature of the TMU. The buffer drives a load of up to 100 pF typical (50 pF minimum) and open circuit to 10 kΩ to ground resistive. The output voltage slope is 5 mV, typical. Therefore, the output voltage equation is as follows: Output Voltage = (Temperature in °C × 5 mV) + 1.365 V (5) Also included in the TMU is an overtemperature comparator. At approximately 140°C, the alarm goes active, and at approximately 7°C below this temperature, the alarm becomes inactive (hysteresis of 7°C prevents tripping on noise and comparator oscillations). If the alarm goes active, the chip powers down and sets a bit in the serial register. An alarm output pin is provided that is an open-drain output. Connect this output through a pullup resistor to the 3.3-V power supply. The resistor must be at least 3.3 kΩ. This creates a slow-speed, low-voltage CMOS digital output with a logical 1 being the normal operating state and a logical 0 being the overtemperature state. 8.2.2.5 LVDS-Compatible I/Os The Event, SYNC, and master-clock inputs are LVDS-compatible input receivers optimized for high-speed and low-time-distortion operation. The Rdata, Rstrobe, and RCLK outputs are similarly LVDS-compatible output drivers optimized for high-speed/low-distortion operation, driving 50-Ω transmission lines. Typically, LVDS data transmission is thought of in terms of 100-Ω twisted-wire-pair (TWP) transmission lines. TWP is not applicable to printed wiring boards and high-speed operation. Therefore, the THS789 device interfaces were designed to operate most effectively with 50-Ω, single-ended transmission lines. Instead of a current-mode output with its correspondingly high output impedance, a more-nearly impedance-matched voltage-mode output driver is used. This minimizes reflections from mismatched transmission line terminations and the resulting waveform distortion. The input receivers do not include the 100-Ω terminating resistor, which must be connected externally to the THS789 device. This was done to accommodate daisy-chaining the THS789 inputs. Input offset voltage was minimized, and the fail-safe feature in the LVDS standard was eliminated in order to minimize distortion. 26 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 8.2.2.6 LVDS-Compatible Inputs The four event inputs, the sync input and the master-clock input all use the same input interface circuitry. Figure 10 is a simplified schematic diagram of the LVDS-compatible receiver input stage. The input signal is impedance-transformed and level-shifted with a PNP emitter-follower and translated into ECL-like differential signals with a common-emitter amplifier. There is no internal termination resistor and no internal pullup or pulldown resistors. Unused inputs may be tied off by connecting both input terminals to ground. If the input terminals are left floating, they are protected by ESD clamps from damage; however, noise may be injected into the THS789 device and may degrade accuracy. The peak input voltage limits are 0.6 V to 1.7 V. Outside of these limiting voltages, parts of the input circuit may saturate and distort the timing. VCC R R 2.5 nH Bond Wire IN 0.5 pf Package 0.1 pf Bond Pad 0.4 pf VCC 2.5 nH Bond Wire IN 0.5 pf Package 0.1 pf Bond Pad 0.4 pf S0389-01 Figure 10. Simplified Schematic of the LVDS Input Figure 11 shows the typical input connections. The transmission line lengths must be matched from the driver to the THS789 input [< 0.5 inch (1.27 cm) difference] and terminated in a 100-Ω resistor placed close [< 0.25 inch (0.635 cm)] to the TMU input pins. The resistor total tolerance should be below 5%. The power dissipation is below 5 mW, so small surface-mounted resistors are preferred. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 27 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com THS789 50-W Transmission Line Equal Length Driver 100 Ω RT LVDS Receiver Figure 11. Typical Input Connection to the THS789 8.2.2.7 LVDS-Compatible Outputs Figure 12 shows a typical wiring diagram of an LVDS output. The transmission line lengths must be matched. A termination resistor may be required if the chosen receiver does not have an internal resistor. Concerning termination resistors: LVDS was originally conceived with twisted-wire pairs of approximately 100-Ω line-to-line impedance. The 100-Ω resistor between lines is simple and effective to terminate such a line. For the higherspeed operation of the THS789 device, use a pair of 50-Ω transmission lines, such as microstrip on the PC board. The same 100-Ω resistor line-to-line termination works well, because the line signals are equal and opposite in phase. This results in the center of the 100-Ω resistor having a constant voltage equal to the common-mode voltage and each side having an apparent 50-Ω termination. An improvement in the termination can be achieved by splitting the 100 Ω into two 50-Ω resistors and ac-grounding (bypassing) the center to ground with a 1000-pF (not critical) capacitor. The termination improvement is usually small and increases the room and parts count. It is the best approach as long as the PCB layout high-frequency performance is not compromised by the higher parts count. As mentioned previously, the driver is optimized to drive 50-Ω transmission lines and provides a driving-point impedance approximating 50 Ω to suppress reflections. Figure 8 is a simplified schematic of the output driver. A standard ECL-like circuit drives the outputs through 25-Ω resistors. The combination of the resistors and the emitter-follower output impedance approximates 50 Ω. The output emitter-followers are biased by current sources that are switched to conserve power. A feedback loop varies the voltage on the two RLs to set and maintain the 1.28-V common-mode voltage of the LVDS-compatible outputs. Another feedback loop holds the emitters of the current switches to 0.4 V to keep the 4-mA current source from saturation. The outputs are short-circuit-proof to a 3.3-V power supply. Shorts to ground should be avoided, as the power dissipation in certain components may exceed safe limits. 28 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 THS789 50-W Transmission Line Equal Length LVDS Driver 100 Ω LVDS Receiver RT Figure 12. Typical Output Connection to the THS789 VCC 1.28 V Ref. + – A1 R R 2.5 nH Bond Wire 25 0.1 pf Bond Pad 1 pf 3k 3k OUT 0.5 pf Package VCC 2.5 nH Bond Wire 25 D 0.1 pf Bond Pad 1 pf OUT 0.5 pf Package 4 mA A2 – + 0.4 V Ref. S0392-01 Figure 13. Simplified Schematic of the LVDS Output Driver Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 29 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com 8.2.3 Application Curve 920 Supply Current (mA) 34-bit Counter 75 MHz 150 MHz 300 MHz 900 880 27-bit Counter 860 840 820 18-bit Counter 800 780 760 8 16 24 32 40 8 16 24 32 40 Rdata Size 8 16 24 32 40 D001 Figure 14. 4-Channel Supply Current vs Rdata, Counter, and Rclock Functional Modes 9 Power Supply Recommendations All the high-speed time-measurement circuitry in the TMU is implemented in differential emitter-coupled logic (ECL). Besides high speed, a characteristic of differential ECL is good rejection of power-supply noise and variation. However, there is a great deal of CMOS logic, FIFO and output-serial interface circuitry that is an excellent source of power-supply current noise. Therefore, to maintain the best accuracy, the TMU power supply must be low-impedance. This is accomplished in the usual ways by careful layout, good ground and power planes, short traces to the power and ground pins, and capacitive bypassing. TI recommends placing a quality, low inductance, high-frequency bypass capacitor of approximately 0.01 μF close to each power pin. The 0402 size works well. Additional bypass capacitors of larger value should be placed near the TMU, making lowinductance connection with the power and ground planes. With a typical power-supply sensitivity of 30 ps/V, a 1% power supply shift yields a 1-picosecond additional error, making power-supply regulation important for the best accuracy. 10 Layout 10.1 Layout Guidelines Figure 15 and Figure 16 show typical layout examples for this device. Use 100-Ω terminating resistors for all LVDS inputs. TI recommends placing all the LVDS input resistors as close as possible to the device (the six pairs of pads are shown in Figure 16 on the left and right sides). The other pads found on the bottom side image are the pairs of decoupling capacitors (0.1 µF and 0.01 µF) for the multiple VDD pins. As noted before, keep the distance between these caps, VDD, and Ground as short as possible. Keep all differential signals as close as possible to the same length to reduce inaccuracies in timestamp measurement. 30 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 10.2 Layout Example Figure 15. Top (Device-Side) Layer Example Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 31 THS789 SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 www.ti.com Layout Example (continued) 0.1-µF and 0.01-µF decoupling capacitor pairs for each VCC pin 100- resistors are as close as possible to the device before vias to the top side to tie to appropriate pins Figure 16. Bottom (Signal Termination and Power Decoupling) Layer Example 10.3 Thermal Considerations The TMU package provides a thermally conductive heat slug at the top for connection to an additional heatsink. The TMU can be placed into many different modes for optimization of performance versus power dissipation, and a table has been provided to help determine the power required. The heat sink should be carefully considered in order to keep the TMU temperature within required limits and to promote the best temperature stability. The TMU time measurement drift with temperature is an excellent 0.1 ps/°C. A good heat sink design takes advantage of the low temperature drift of the TMU. 32 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 THS789 www.ti.com SLOS776A – SEPTEMBER 2012 – REVISED DECEMBER 2015 11 Device and Documentation Support 11.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.2 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: THS789 33 PACKAGE OPTION ADDENDUM www.ti.com 28-Sep-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) (3) Device Marking (4/5) (6) THS789PFD NRND HTQFP PFD 100 90 RoHS & Green NIPDAU Level-4-260C-72 HR 0 to 70 THS789PFD (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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