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TL081, TL081A, TL081B, TL082, TL082A
TL082B, TL084, TL084A, TL084B
SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
TL08xx JFET-Input Operational Amplifiers
1 Features
3 Description
•
•
The TL08xx JFET-input operational amplifier family is
designed to offer a wider selection than any
previously developed operational amplifier family.
Each of these JFET-input operational amplifiers
incorporates well-matched, high-voltage JFET and
bipolar transistors in a monolithic integrated circuit.
The devices feature high slew rates, low input bias
and offset currents, and low offset-voltage
temperature coefficient.
1
•
•
•
•
•
•
•
•
Low Power Consumption: 1.4 mA/ch Typical
Wide Common-Mode and Differential Voltage
Ranges
Low Input Bias Current: 30 pA Typical
Low Input Offset Current: 5 pA Typical
Output Short-Circuit Protection
Low Total Harmonic Distortion: 0.003% Typical
High Input Impedance: JFET Input Stage
Latch-Up-Free Operation
High Slew Rate: 13 V/μs Typical
Common-Mode Input Voltage Range
Includes VCC+
2 Applications
•
•
•
•
Tablets
White goods
Personal electronics
Computers
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TL084xD
SOIC (14)
8.65 mm × 3.91 mm
TL08xxFK
LCCC (20)
8.89 mm × 8.89 mm
TL084xJ
CDIP (14)
19.56 mm × 6.92 mm
TL084xN
PDIP (14)
19.3 mm × 6.35 mm
TL084xNS
SO (14)
10.3 mm × 5.3 mm
TL084xPW
TSSOP (14)
5.0 mm × 4.4 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Schematic Symbol
TL081
TL082 (EACH AMPLIFIER)
TL084 (EACH AMPLIFIER)
OFFSET N1
IN +
+
IN −
−
OUT
IN +
+
IN −
−
OUT
OFFSET N2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TL081, TL081A, TL081B, TL082, TL082A
TL082B, TL084, TL084A, TL084B
SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
8
1
1
1
2
3
5
Absolute Maximum Ratings ..................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Electrical Characteristics for TL08xC, TL08xxC, and
TL08xI ........................................................................ 6
Electrical Characteristics for TL08xM and TL084x ... 7
Operating Characteristics.......................................... 7
Dissipation Rating Table ........................................... 8
Typical Characteristics .............................................. 9
Parameter Measurement Information ................ 13
Detailed Description ............................................ 14
8.1 Overview ................................................................. 14
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
8.4 Device Functional Modes........................................ 14
9
Applications and Implementation ...................... 15
9.1 Application Information............................................ 15
9.2 Typical Applications ............................................... 15
9.3 System Examples ................................................... 16
10 Power Supply Recommendations ..................... 18
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Examples................................................... 19
12 Device and Documentation Support ................. 20
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
20
20
13 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (January 2014) to Revision I
Page
•
Added Pin Configuration and Functions section, Storage Conditions table, ESD Ratings table, Feature Description
section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................ 1
•
Added Applications ................................................................................................................................................................. 1
•
Moved Typical Characteristics into Specifications section. ................................................................................................... 9
Changes from Revision G (September 2004) to Revision H
Page
•
Updated document to new TI data sheet format - no specification changes. ........................................................................ 1
•
Deleted Ordering Information table. ....................................................................................................................................... 1
2
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
5 Pin Configuration and Functions
TL082 FK Package
20-Pin LCCC
Top View
NC
1OUT
NC
VCC+
NC
TL081 and TL081x D, P, and PS Package
8-Pin SOIC, PDIP, and SO
Top View
NC
1IN −
NC
1IN +
NC
4
3 2 1 20 19
18
17
6
16
7
15
8
14
9 10 11 12 13
NC
2OUT
NC
2IN −
NC
1OUT
1IN −
1IN +
VCC −
1IN −
1OUT
NC
4OUT
4IN −
TL084 FK Package
20-Pin LCCC
Top View
4
3 2 1 20 19
18
5
17
6
16
7
15
8
14
9 10 11 12 13
8
2
7
3
6
4
5
NC
VCC +
OUT
OFFSET N2
1
8
2
7
3
6
4
5
VCC +
2OUT
2IN −
2IN +
TL084 and TL084x D, J, N, NS and PW Package
14-Pin SOIC, CDIP, PDIP, SO, and TSSOP
Top View
4IN +
NC
VCC −
NC
3IN +
1OUT
1IN −
1IN +
VCC +
2IN +
2IN −
2OUT
2IN −
2OUT
NC
3OUT
3IN −
1IN +
NC
VCC +
NC
2IN +
1
TL082 and TL082x D, JG, P, PS and PW Package
8-Pin SOIC, CDIP, PDIP, SO, and TSSOP
Top View
NC
VCC −
NC
2IN +
NC
5
OFFSET N1
IN −
IN +
VCC −
1
14
2
13
3
12
4
11
5
10
6
9
7
8
4OUT
4IN −
4IN +
VCC −
3IN +
3IN −
3OUT
Pin Functions
PIN
TL081
TL082
TL084
SOIC, PDIP,
SO
SOIC,
CDIP, PDIP,
SO, TSSOP
LCCC
SOIC,
CDIP,
PDIP, SO,
TSSOP
1IN–
—
2
5
2
3
I
Negative input
1IN+
—
3
7
3
4
I
Positive input
1OUT
—
1
2
1
2
O
Output
2IN–
—
6
15
6
9
I
Negative input
2IN+
—
5
12
5
8
I
Positive input
2OUT
—
7
17
7
10
O
Output
3IN–
—
—
—
9
13
I
Negative input
3IN+
—
—
—
10
14
I
Positive input
3OUT
—
—
—
8
12
O
Output
4IN–
—
—
—
13
19
I
Negative input
4IN+
—
—
—
12
18
I
Positive input
4OUT
—
—
—
14
20
O
Output
NAME
Copyright © 1977–2015, Texas Instruments Incorporated
I/O
LCCC
DESCRIPTION
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3
TL081, TL081A, TL081B, TL082, TL082A
TL082B, TL084, TL084A, TL084B
SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
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Pin Functions (continued)
PIN
TL081
TL082
TL084
SOIC, PDIP,
SO
SOIC,
CDIP, PDIP,
SO, TSSOP
LCCC
SOIC,
CDIP,
PDIP, SO,
TSSOP
LCCC
IN–
2
—
—
—
—
I
Negative input
IN+
3
—
—
—
—
I
Positive input
NAME
1
4
5
6
8
8
—
9
DESCRIPTION
1
3
NC
I/O
—
11
7
—
Do not connect
11
13
14
15
16
18
17
OFFSET
N1
1
—
—
—
—
—
Input offset adjustment
OFFSET
N2
5
—
—
—
—
—
Input offset adjustment
OUT
6
—
—
—
—
O
Output
VCC–
4
4
10
11
16
—
Power supply
VCC+
7
8
20
4
6
—
Power supply
4
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TL082B, TL084, TL084A, TL084B
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VCC+
MAX
Supply voltage (2)
VCC–
VID
Differential input voltage
VI
Input voltage (2) (4)
Operating free-air temperature
0
(2)
(3)
(4)
(5)
V
70
°C
TL08_I
–40
85
TL084Q
–40
125
TL08_M
–55
125
Operating virtual junction temperature
(1)
V
±15
See Dissipation Rating Table
TL08_C
TL08_AC
TL08_BC
Tstg
±30
Unlimited
Continuous total power dissipation
TC
V
–18
(3)
Duration of output short circuit (5)
TA
UNIT
18
150
°C
Case temperature for 60 seconds
FK package
TL08_M
260
°C
Lead temperature 1,6 mm (1/16
inch) from case for 10 seconds
J or JG package
TL08_M
300
°C
150
°C
Storage temperature
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC−.
Differential voltages are at IN+, with respect to IN−.
The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
1000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC+
Supply voltage
5
15
V
VCC–
Supply voltage
–5
–15
V
VCM
Common-mode voltage
VCC– + 4
VCC+ – 4
V
TL08xM
–55
125
TL08xQ
–40
125
TL08xI
–40
85
0
70
TA
Ambient temperature
TL08xC
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°C
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
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6.4 Thermal Information
TL08xx
THERMAL METRIC (1)
RθJA
(1)
(2)
(3)
Junction-to-ambient
thermal resistance (2) (3)
D (SOIC)
N (PDIP)
NS (SO)
P (PDIP)
PS (SO)
8 PINS
14
PINS
14 PINS
14 PINS
{PIN
COUNT}
PINS
{PIN
COUNT}
PINS
8 PINS
PW (TSSOP)
14
PINS
97
86
76
80
85
95
149
113
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA) / RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
6.5 Electrical Characteristics for TL08xC, TL08xxC, and TL08xI
VCC± = ±15 V (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
VIO
Input offset
voltage
VO = 0,
RS = 50 Ω
αVIO
Temperature
coefficient of
VO = 0,
input
RS = 50 Ω
offset
voltage
IIO
Input offset
current (2)
VO = 0
IIB
Input bias
current (2)
VO = 0
VICR
Commonmode
input voltage
range
VOM
Maximum
peak
output
voltage
swing
TA (1)
TL081C, TL082C,
TL084C
MIN
25°C
RL ≥ 10 kΩ
RL ≥ 2 kΩ
TYP
MAX
3
15
Full
range
MIN
TYP
MAX
3
6
20
Full
range
18
25°C
5
Full
range
30
Full
range
TL081BC, TL082BC,
TL084BC
MIN
TYP
MAX
2
3
7.5
200
5
30
10
MIN
100
5
MAX
3
6
100
5
30
7
200
30
7
25°C
±11
–12
to
15
±11
–12
to
15
±11
–12
to
15
±11
–12
to
15
25°C
±12
±13.5
±12
±13.5
±12
±13.5
±12
±13.5
Full
range
±12
±12
±12
±12
mV
μV/°C
18
2
200
UNIT
TYP
9
18
2
400
TL081I, TL082I,
TL084I
5
18
2
25°C
RL = 10 kΩ
TL081AC, TL082AC,
TL084AC
100
pA
10
nA
200
pA
20
nA
V
V
±10
±12
±10
±12
±10
±12
±10
±12
25°C
25
200
50
200
50
200
50
200
Full
range
15
AVD
Large-signal
differential
voltage
amplification
B1
Unity-gain
bandwidth
25°C
3
3
3
3
ri
Input
resistance
25°C
1012
1012
1012
1012
Ω
CMRR
Commonmode
rejection
ratio
VIC = VICRmin,
VO = 0,
RS = 50 Ω
25°C
70
86
75
86
75
86
75
86
dB
kSVR
Supplyvoltage
rejection
ratio
(ΔVCC±/ΔVIO)
VCC = ±15 V to
±9 V,
VO = 0,
RS = 50 Ω
25°C
70
86
80
86
80
86
80
86
dB
(1)
(2)
6
VO = ±10 V,
RL ≥ 2 kΩ
15
25
V/mV
25
MHz
All characteristics are measured under open-loop conditions with zero common-mode voltage, unless otherwise specified. Full range for
TA is 0°C to 70°C for TL08_C, TL08_AC, TL08_BC and –40°C to 85°C for TL08_I.
Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as
shown in Figure 13. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as
possible.
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
Electrical Characteristics for TL08xC, TL08xxC, and TL08xI (continued)
VCC± = ±15 V (unless otherwise noted)
TEST
CONDITIONS
PARAMETER
TA (1)
TL081C, TL082C,
TL084C
MIN
TL081AC, TL082AC,
TL084AC
TYP
MAX
2.8
ICC
Supply
current
(each
amplifier)
VO = 0,
No load
25°C
1.4
VO1/VO2
Crosstalk
attenuation
AVD = 100
25°C
120
MIN
TL081BC, TL082BC,
TL084BC
TYP
MAX
1.4
2.8
MIN
120
TL081I, TL082I,
TL084I
TYP
MAX
1.4
2.8
MIN
120
UNIT
TYP
MAX
1.4
2.8
mA
120
dB
6.6 Electrical Characteristics for TL08xM and TL084x
VCC± = ±15 V (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
VIO
Input offset voltage
VO = 0, RS = 50 Ω
αVIO
Temperature
coefficient of input
offset voltage
VO = 0, RS = 50 Ω
IIO
Input offset current (2)
VO = 0
Input bias current (2)
IIB
VICR
Common-mode
input voltage range
VOM
Maximum peak
output voltage swing
TA
TL081M, TL082M
MIN
TYP
25°C
3
Full range
Full range
18
25°C
5
30
125°C
RL ≥ 10 kΩ
RL ≥ 2 kΩ
25°C
±11
25°C
±12
±13.5
UNIT
MAX
6
3
9
mV
15
μV/°C
18
100
5
100
pA
20
200
30
nA
200
pA
50
nA
50
–12
to
15
Full range
TYP
20
25°C
RL = 10 kΩ
MIN
9
125°C
VO = 0
TL084Q, TL084M
MAX
±12
±11
–12
to
15
±12
±13.5
V
±12
V
±10
±12
±10
±12
25°C
25
200
25
200
Full range
15
AVD
Large-signal differential
voltage amplification
B1
Unity-gain bandwidth
25°C
3
3
MHz
ri
Input resistance
25°C
12
12
Ω
CMRR
Common-mode
rejection ratio
VIC = VICRmin,
VO = 0, RS = 50 Ω
25°C
80
86
80
86
dB
kSVR
Supply-voltage
rejection ratio
(ΔVCC±/ΔVIO)
VCC = ±15 V to ±9 V,
VO = 0, RS = 50 Ω
25°C
80
86
80
86
dB
ICC
Supply current
(each amplifier)
VO = 0, No load
25°C
1.4
VO1/VO2
Crosstalk attenuation
AVD = 100
25°C
120
(1)
(2)
VO = ±10 V, RL ≥ 2 kΩ
V/mV
15
10
10
2.8
1.4
2.8
mA
120
dB
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as shown
in Figure 13. Pulse techniques must be used that maintain the junction temperatures as close to the ambient temperature as possible.
6.7 Operating Characteristics
VCC± = ±15 V, TA= 25°C (unless otherwise noted)
PARAMETER
SR
(1)
Slew rate at unity gain
MIN
TYP
VI = 10 V, RL = 2 kΩ, CL = 100 pF,
See Figure 19
TEST CONDITIONS
8 (1)
13
VI = 10 V, RL = 2 kΩ, CL = 100 pF,
TA = − 55°C to 125°C,
See Figure 19
5 (1)
MAX
UNIT
V/μs
On products compliant to MIL-PRF-38535, this parameter is not production tested.
Copyright © 1977–2015, Texas Instruments Incorporated
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Operating Characteristics (continued)
VCC± = ±15 V, TA= 25°C (unless otherwise noted)
PARAMETER
tr
Rise-time
TEST CONDITIONS
MIN
TYP
0.05
overshoot factor
VI = 20 V, RL = 2 kΩ, CL = 100 pF,
See Figure 19
Vn
Equivalent input noise
voltage
RS = 20 Ω
In
Equivalent input noise
current
RS = 20 Ω,
THD
Total harmonic distortion
VIrms = 6 V, AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ,
f = 1 kHz,
MAX
UNIT
μs
20%
f = 1 kHz
f = 10 Hz to 10 kHz
f = 1 kHz
18
nV/√Hz
4
μV
0.01
pA/√Hz
0.003%
6.8 Dissipation Rating Table
8
PACKAGE
TA ≤ 25°C
POWER RATING
D (14 pin)
FK
DERATING
FACTOR
DERATE
ABOVE TA
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
680 mW
7.6 mW/°C
60°C
604 m/W
490 mW
186 mW
680 mW
11.0 mW/°C
88°C
680 m/W
680 mW
273 mW
J
680 mW
11.0 mW/°C
88°C
680 m/W
680 mW
273 mW
JG
680 mW
8.4 mW/°C
69°C
672 m/W
546 mW
210 mW
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
6.9 Typical Characteristics
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various
devices. The Figure numbers referenced in the following graphs are located in Parameter Measurement Information.
Table 1. Table of Graphs
Figure
Maximum peak output voltage
versus
versus
versus
versus
Large-signal differential voltage
amplification
versus Free-air temperature
versus Load resistance
Figure 7
Figure 8
Differential voltage amplification
versus Frequency with feed-forward
compensation
Figure 9
PD
Total power dissipation
versus Free-air temperature
Figure 10
ICC
Supply current
versus Free-air temperature
versus Supply voltage
Figure 11
Figure 12
IIB
Input bias current
versus Free-air temperature
Figure 13
Large-signal pulse response
versus Time
Figure 14
VO
Output voltage
versus Elapsed time
Figure 15
CMRR
Common-mode rejection ratio
versus Free-air temperature
Figure 16
Vn
Equivalent input noise voltage
versus Frequency
Figure 17
THD
Total harmonic distortion
versus Frequency
Figure 18
VOM
AVD
Frequency
Free-air temperature
Load resistance
Supply voltage
±15
VCC± = ±15 V
±12.5
±10
RL = 10 kΩ
TA = 25°C
See Figure 2
VCC± = ±10 V
±7.5
VCC± = ±5 V
±5
±2.5
0
100
1k
10 k
100 k
f − Frequency − Hz
1M
10 M
Figure 1. Maximum Peak Output Voltage
vs
Frequency
Copyright © 1977–2015, Texas Instruments Incorporated
VOM
VOM − Maximum Peak Output Voltage − V
±15
VOM
VOM − Maximum Peak Output Voltage − V
Figure 1, Figure 2, Figure 3
Figure 4
Figure 5
Figure 6
VCC± = ±15 V
±12.5
RL = 2 kΩ
TA = 25°C
See Figure 2
±10
VCC± = ±10 V
±7.5
±5
VCC± = ±5 V
±2.5
0
100
1k
10 k
100 k
f − Frequency − Hz
1M
10 M
Figure 2. Maximum Peak Output Voltage
vs
Frequency
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±15
VCC± = ±15 V
RL = 2 kΩ
See Figure 2
TA = 25°C
±12.5
V
VOM
OM − Maximum Peak Output Voltage − V
±10
TA = −55°C
±7.5
TA = 125°C
±5
±2.5
±12.5
RL = 2 kΩ
±10
±7.5
±5
±2.5
VCC± = ±15 V
See Figure 2
0
10 k
40 k 100 k
400 k 1 M
f − Frequency − Hz
4M
0
−75
10 M
VOM
VOM − Maximum Peak Output Voltage − V
±7.5
±5
±2.5
8
0.4
0.7 1
2
4
125
±7.5
±5
±2.5
8
0
2
4
6
8
10
12
14
16
|VCC±| − Supply Voltage − V
Figure 6. Maximum Peak Output Voltage
vs
Supply Voltage
106
AAVD – Large-Signal Differential
Voltage Amplification
AAVD − Large-Signal Differential
Voltage Amplification − V/mV
100
±10
7 10
400
200
100
40
20
10
VCC± = ±15 V
VO = ±10 V
RL = 2 kΩ
VCC± = ±5 V to ±15 V
RL = 2 kΩ
TA = 25°C
105
104
Differential
Voltage
Amplification
103
102
−25
0
25
50
75
100
125
TA − Free-Air Temperature − °C
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0°
45°
90°
Phase Shift
101
135°
1
−50
Figure 7. Large-Signal Differential Voltage Amplification
vs
Free-Air Temperature
10
75
0
0.2
1000
1
−75
50
±12.5
Figure 5. Maximum Peak Output Voltage
vs
Load Resistance
2
25
RL = 10 kΩ
TA = 25°C
RL − Load Resistance − kΩ
4
0
±15
VCC± = ±15 V
TA = 25°C
See Figure 2
±10
0
0.1
−25
Figure 4. Maximum Peak Output Voltage
vs
Free-Air Temperature
±15
±12.5
−50
TA − Free-Air Temperature − °C
Figure 3. Maximum Peak Output Voltage
vs
Frequency
VOM − Maximum Peak Output Voltage − V
VOM
RL = 10 kΩ
Phase Shift
VOM
VOM − Maximum Peak Output Voltage − V
±15
1
10
100
1k
10 k 100 k
f − Frequency − Hz
1M
180°
10 M
Figure 8. Large-Signal Differential Voltage Amplification and
Phase Shift
vs
Frequency
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250
VCC± =±15 V
C2 = 3 pF
TA = 25°C
See Figure 3
105
VCC± =±15 V
No Signal
No Load
225
PD − Total Power Dissipation − mW
AVD − Differential Voltage Amplification − V/mV
106
104
103
102
10
200
175
TL084, TL085
150
125
100
TL082, TL083
75
TL081
50
25
1
100
1k
10 k
100 k
1M
0
−75
10 M
−50
25
50
75
100
125
2
2
VCC± = ±15 V
No Signal
No Load
1.8
1.6
ICC − Supply Current Per Amplifier − mA
I CC±
ICC − Supply Current Per Amplifier − mA
I CC±
0
Figure 10. Total Power Dissipation
vs
Free-Air Temperature
Figure 9. Differential Voltage Amplification
vs
Frequency with Feed-Forward Compensation
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−75
TA = 25°C
No Signal
No Load
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50
−25
0
25
50
75
100
0
125
2
4
6
8
10
12
14
16
TA − Free-Air Temperature − °C
|VCC±| − Supply Voltage − V
Figure 11. Supply Current per Amplifier
vs
Free-Air Temperature
Figure 12. Supply Current per Amplifier
vs
Supply Voltage
100
6
VI and VO − Input and Output Voltages − V
V CC± =±15 V
I IB − Input Bias Current − nA
−25
TA − Free-Air Temperature °−C
f − Frequency With Feed-Forward Compensation − Hz
10
1
0.1
0.01
− 50
4
Output
2
0
−2
Input
−4
−6
− 25
0
25
50
75
100
TA − Free-Air Temperature − °C
Figure 13. Input Bias Current
vs
Free-Air Temperature
Copyright © 1977–2015, Texas Instruments Incorporated
125
VCC± = ±15 V
RL = 2 kΩ
CL = 100 pF
TA = 25°C
0
0.5
1
1.5
t − Time − µs
2
2.5
3
3.5
Figure 14. Voltage-Follower Large-Signal Pulse Response
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28
CMRR − Common-Mode Rejection Ratio − dB
89
VO − Output Voltage − mV
24
20
16
VCC± =±15 V
RL = 2 kΩ
CL = 100 pF
TA = 25°C
See Figure 1
12
8
4
0
−4
0.2
0.4
0.6
0.8
1.0
85
84
− 50
− 25
0
25
50
75
100
125
Figure 15. Output Voltage
vs
Elapsed Time
Figure 16. Common-Mode Rejection Ratio
vs
Free-Air Temperature
40
30
20
10
40 100
400 1 k
4 k 10 k
f − Frequency − Hz
40 k 100 k
Figure 17. Equivalent Input Noise Voltage
vs
Frequency
12
86
83
− 75
1.2
VCC± = ±15 V
AVD = 10
RS = 20 Ω
TA = 25°C
10
87
TA − Free-Air Temperature −C
°
50
0
88
t − Elapsed Time – µs
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1
THD − Total Harmonic Distortion − %
V n − Equivalent Input Noise Voltage − nV/Hz
nV/ Hz
0
VCC± =±15 V
RL = 10 kΩ
VCC± = ±15 V
AVD = 1
VI(RMS) = 6 V
0.4
TA = 25°C
0.1
0.04
0.01
0.004
0.001
100
400
1k
4 k 10 k
f − Frequency − Hz
40 k 100 k
Figure 18. Total Harmonic Distortion
vs
Frequency
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7 Parameter Measurement Information
10 kΩ
1 kΩ
−
−
VI
OUT
OUT
+
+
VI
RL
CL = 100 pF
Figure 19. Test Figure 1
Figure 20. Test Figure 2
100 kΩ
TL081
−
IN −
C2
OUT
C1 500 pF
N2
+
IN +
−
IN −
CL = 100 pF
RL = 2 kΩ
N1
100 kΩ
N1
OUT
1.5 kΩ
+
VCC −
Figure 21. Test Figure 3
Copyright © 1977–2015, Texas Instruments Incorporated
Figure 22. Test Figure 4
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8 Detailed Description
8.1 Overview
The TL08xx JFET-input operational amplifier family is designed to offer a wider selection than any previously
developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates wellmatched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high
slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. Offset adjustment
and external compensation options are available within the TL08xx family.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for
operation from −40°C to 85°C. The Q-suffix devices are characterized for operation from –40°C to +125°C. The
M-suffix devices are characterized for operation over the full military temperature range of −55°C to +125°C.
8.2 Functional Block Diagram
VCC +
IN +
64Ω
IN −
OUT
128Ω
64Ω
C1
1080Ω
1080Ω
VCC −
OFFSET N1
OFFSET N2
TL081 Only
8.3 Feature Description
8.3.1 Total Harmonic Distortion
Harmonic distortions to an audio signal are created by electronic components in a circuit. Total harmonic
distortion (THD) is a measure of harmonic distortions accumulated by a signal in an audio system. These devices
have a very low THD of 0.003% meaning that the TL08x devices will add little harmonic distortion when used in
audio signal applications.
8.3.2 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. These devices have a 13-V/μs slew rate.
8.4 Device Functional Modes
These devices are powered on when the supply is connected. This device can be operated as a single-supply
operational amplifier or dual-supply amplifier depending on the application.
14
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TL08x series of operational amplifiers can be used in countless applications. The few applications in this
section show principles used in all applications of these parts.
9.2 Typical Applications
9.2.1 Inverting Amplifier Application
A typical application for an operational amplifier in an inverting amplifier. This amplifier takes a positive voltage
on the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes
negative voltages positive.
RF
RI
Vsup+
VOUT
VIN
+
Vsup-
Figure 23. Schematic for Inverting Amplifier Application
9.2.1.1 Design Requirements
The supply voltage must be chosen such that it is larger than the input voltage range and output range. For
instance, this application will scale a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to
accommodate this application.
9.2.1.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier:
(1)
(2)
Once the desired gain is determined, choose a value for RI or RF. Choosing a value in the kΩ range is desirable
because the amplifier circuit will use currents in the milliamp range. This ensures the part will not draw too much
current. This example will choose 10 kΩ for RI which means 36 kΩ will be used for RF. This was determined by
Equation 3.
(3)
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Typical Applications (continued)
9.2.1.3 Application Curve
2
VIN
1.5
VOUT
1
Volts
0.5
0
-0.5
-1
-1.5
-2
0
0.5
1
Time (ms)
1.5
2
Figure 24. Input and output voltages of the inverting amplifier
9.3 System Examples
9.3.1 General Applications
RF = 100 kΩ
VCC +
−
Output
R1
Input
−
C3
TL081
+
CF = 3.3 µF
TL081
R2
+
15 V
3.3 kΩ
Output
VCC −
1 kΩ
−15 V
R1 = R2 = 2(R3) = 1.5 MΩ
R3
C1
C2
C1 = C2 = C3 = 110 pF
2
1
fo =
= 1 kHz
2π R1 C1
3.3 kΩ
9.1 kΩ
Figure 25. 0.5-Hz Square-Wave Oscillator
Figure 26. High-Q Notch Filter
− 15 V
18 pF
−
TL084
VCC +
18 pF
Output A
+
+
TL084
−
VCC +
88.4 kΩ
−
100 kΩ
VCC −
6 cos ωt
1 kΩ
15 V
1N4148
88.4 kΩ
VCC +
18 kΩ
(see Note A)
A. These resistor values may be adjusted for a symmetrical output.
VCC +
100 kΩ
VCC −
−
100 µF
VCC+
Output B
+
100 kΩ
18 kΩ
(see Note A)
1/2
TL082
18 pF
TL084
100 kΩ
88.4 kΩ
1/2
TL082
+
Input
1 kΩ
VCC +
−
1 µF
1N4148
6 sin ωt
VCC +
1 MΩ
+
1
2π RF CF
−
f=
TL084
Output C
+
Figure 27. Audio-Distribution Amplifier
16
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Figure 28. 100-kHz Quadrature Oscillator
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System Examples (continued)
16 kΩ
16 kΩ
220 pF
220 pF
VCC +
43 kΩ
43 kΩ
1/4
TL084
VCC +
VCC +
43 kΩ
1/4
TL084
1/4
TL084
+
+
+
1.5 kΩ
+
−
1/4
TL084
220 pF
VCC +
−
Input
220 pF
30 kΩ
−
43 kΩ
43 kΩ
30 kΩ
1.5 kΩ
VCC −
−
43 kΩ
VCC −
VCC −
Output
B
VCC −
Output A
Output A
Output B
2 kHz/div
Second-Order Bandpass Filter
fo = 100 kHz, Q = 30, GAIN = 4
2 kHz/div
Cascaded Bandpass Filter
fo = 100 kHz, Q = 69, GAIN = 16
Figure 29. Positive-Feedback Bandpass Filter
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10 Power Supply Recommendations
CAUTION
Supply voltages larger than 36 V for a single-supply or outside the range of ±18 V for a
dual-supply can permanently damage the device (see the Absolute Maximum
Ratings ).
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high
impedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout.
11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current. For more detailed information, refer to
Circuit Board Layout Techniques, (SLOA089).
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Examples.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
18
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SLOS081I – FEBRUARY 1977 – REVISED MAY 2015
11.2 Layout Examples
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
RF
NC
NC
IN1í
VCC+
IN1+
OUT
VCCí
NC
VS+
Use low-ESR, ceramic
bypass capacitor
RG
GND
VIN
RIN
GND
Only needed for
dual-supply
operation
GND
VS(or GND for single supply)
VOUT
Ground (GND) plane on another layer
Figure 30. Operational Amplifier Board Layout for Noninverting Configuration
VIN
RIN
RG
+
VOUT
RF
Figure 31. Operational Amplifier Schematic for Noninverting Configuration
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For more information, see the following:
• Circuit Board Layout Techniques, SLOA089.
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TL081
Click here
Click here
Click here
Click here
Click here
TL081A
Click here
Click here
Click here
Click here
Click here
TL081B
Click here
Click here
Click here
Click here
Click here
TL082
Click here
Click here
Click here
Click here
Click here
TL082A
Click here
Click here
Click here
Click here
Click here
TL082B
Click here
Click here
Click here
Click here
Click here
TL084
Click here
Click here
Click here
Click here
Click here
TL084A
Click here
Click here
Click here
Click here
Click here
TL084B
Click here
Click here
Click here
Click here
Click here
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
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26-Jun-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
5962-9851501Q2A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
59629851501Q2A
TL082MFKB
5962-9851501QPA
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
9851501QPA
TL082M
5962-9851503Q2A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
59629851503Q2A
TL084
MFKB
5962-9851503QCA
ACTIVE
CDIP
J
14
1
TBD
A42
N / A for Pkg Type
-55 to 125
5962-9851503QC
A
TL084MJB
TL081ACD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
081AC
TL081ACDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
081AC
TL081ACP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL081ACP
TL081BCD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
081BC
TL081BCDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
081BC
TL081BCP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL081BCP
TL081BCPE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL081BCP
TL081CD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL081C
TL081CDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL081C
TL081CP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL081CP
TL081CPE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL081CP
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TL081CPSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL081ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL081I
TL081IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL081I
TL081IP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TL081IP
TL082ACD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACDE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082AC
TL082ACP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL082ACP
TL082ACPSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082A
TL082BCD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082BC
TL082BCDE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082BC
TL082BCDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082BC
TL082BCDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082BC
TL082BCDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
082BC
TL082BCP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL082BCP
Addendum-Page 2
T081
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TL082BCPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL082BCP
TL082CD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL082C
TL082CDE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL082C
TL082CDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL082C
TL082CDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL082C
TL082CDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL082C
TL082CP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL082CP
TL082CPSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082
TL082CPSRG4
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082
TL082CPW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082
TL082CPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082
TL082CPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T082
TL082ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL082I
TL082IDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL082I
TL082IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL082I
TL082IDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL082I
TL082IDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL082I
TL082IP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TL082IP
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TL082IPE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TL082IP
TL082IPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
Z082
TL082MFKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
59629851501Q2A
TL082MFKB
TL082MJG
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
TL082MJG
TL082MJGB
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
9851501QPA
TL082M
TL084ACD
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084AC
TL084ACDE4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084AC
TL084ACDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084AC
TL084ACDRE4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084AC
TL084ACDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084AC
TL084ACN
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL084ACN
TL084ACNSR
ACTIVE
SO
NS
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084A
TL084BCD
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084BC
TL084BCDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084BC
TL084BCDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084BC
TL084BCN
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL084BCN
TL084BCNE4
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL084BCN
TL084CD
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
Addendum-Page 4
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TL084CDE4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
TL084CDG4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
TL084CDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
TL084CDRE4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
TL084CDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084C
TL084CN
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL084CN
TL084CNE4
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
TL084CN
TL084CNSR
ACTIVE
SO
NS
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
TL084
TL084CPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T084
TL084CPWE4
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T084
TL084CPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
T084
TL084ID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL084I
TL084IDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL084I
TL084IDRE4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL084I
TL084IDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
TL084I
TL084IN
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TL084IN
TL084INE4
ACTIVE
PDIP
N
14
25
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 85
TL084IN
TL084MFK
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
TL084MFK
Addendum-Page 5
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2019
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TL084MFKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
59629851503Q2A
TL084
MFKB
TL084MJ
ACTIVE
CDIP
J
14
1
TBD
A42
N / A for Pkg Type
-55 to 125
TL084MJ
TL084MJB
ACTIVE
CDIP
J
14
1
TBD
A42
N / A for Pkg Type
-55 to 125
5962-9851503QC
A
TL084MJB
TL084QD
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
TL084Q
TL084QDG4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
TL084Q
TL084QDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
TL084Q
TL084QDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
TL084Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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