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TL1431-EP
SLVS529D – APRIL 2004 – REVISED JANUARY 2015
TL1431-EP Precision-Programmable Reference
1 Features
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
1
0.4% Initial Voltage Tolerance
0.2-Ω Typical Output Impedance
Fast Turnon: 500 ns
Sink Current Capability: 1 to 100 mA
Low Reference Current (REF)
Adjustable Output Voltage: VI(ref) to 36 V
Supports Defense, Aerospace, and Medical
Applications
– Controlled Baseline
– One Assembly and Test Site
– One Fabrication Site
– Available in Military (–55°C to 125°C)
Temperature Range
– Extended Product Life Cycle
– Extended Product-Change Notification
– Product Traceability
Shunt Regulators
Temperature-Compensated Comparators
PWM Converter Reference
Photodiode Reference Drivers
Precision Current Limiters
Precision Current Sink
3 Description
The TL1431-EP device is a precision-programmable
reference with specified thermal stability over the
military temperature range. The output voltage can be
set to any value from VI(ref) (approximately 2.5 V) to
36 V with two external resistors (see Figure 21). This
device has a typical output impedance of 0.2 Ω.
Active output circuitry provides a very sharp turnon
characteristic, making the device an excellent
replacement for Zener diodes and other types of
references in applications such as onboard
regulation, adjustable power supplies, and switching
power supplies.
Device Information(1)
PART NUMBER
TL1431-EP
PACKAGE
BODY SIZE (NOM)
SOIC (8)
3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
4 Simplified Schematic
CATHODE
1
800Ω
REF
Symbol
800Ω
8
REF
20 pF
150Ω
3.28 kΩ
ANODE
4 kΩ
CATHODE
10kΩ
2.4 kΩ
7.2 kΩ
20 pF
1 kΩ
800Ω
ANODE
2, 3, 6, 7
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TL1431-EP
SLVS529D – APRIL 2004 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Dissipation Rating Table ...........................................
Electrical Characteristics...........................................
Typical Characteristics .............................................
Parameter Measurement Information .................. 8
Detailed Description ............................................ 11
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
11
11
11
10 Application and Implementation........................ 12
10.1 Application Information.......................................... 12
10.2 Typical Application ................................................ 12
11 Power Supply Recommendations ..................... 14
12 Layout................................................................... 15
12.1 Layout Guidelines ................................................. 15
12.2 Layout Example .................................................... 15
13 Device and Documentation Support ................. 16
13.1 Trademarks ........................................................... 16
13.2 Electrostatic Discharge Caution ............................ 16
13.3 Glossary ................................................................ 16
14 Mechanical, Packaging, and Orderable
Information ........................................................... 16
5 Revision History
Changes from Revision C (December 2006) to Revision D
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Changed pinout title from JG to D Package .......................................................................................................................... 3
2
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SLVS529D – APRIL 2004 – REVISED JANUARY 2015
6 Pin Configuration and Functions
D Package
8-Pin SOIC
(Top View)
CATHODE
ANODE
ANODE
NC
1
8
2
7
3
6
4
5
REF
ANODE
ANODE
NC
NC − No internal connection
Pin Functions
PIN
NO.
1
NAME
CATHODE
2
3
6
5
8
I/O
DESCRIPTION
Cathode
I/O
ANODE
7
4
I/O
I/O
I/O
ANODE pins are connected internally
I/O
NC
—
REF
I
No internal connection
Reference
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7 Specifications
7.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
37
V
–100
150
mA
–0.00005
10
mA
150
°C
260
°C
150
°C
Cathode voltage (2), VKA
Continuous cathode current, IKA
Reference input current, II(ref)
Operating virtual junction temperature (3), TJ
Lead temperature 1.6 mm (1/16 inch) from case for 10 s
Storage temperature, Tstg
(1)
(2)
(3)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to ANODE, unless otherwise noted.
Long-term high-temperature storage and/or use at the absolute maximum ratings may result in a reduction of overall device life. See
www.ti.com/ep_quality for additional information on enhanced plastic packaging.
7.2 ESD Ratings
VALUE
Electrostatic
discharge
V(ESD)
(1)
(2)
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
UNIT
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
V
±2000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN
MAX
UNIT
VKA
Cathode voltage
VI(ref)
36
V
IKA
Cathode current
1
100
mA
TA
Operating free-air temperature
–55
125
°C
7.4 Thermal Information
TL1431-EP
THERMAL METRIC
(1)
D
UNIT
8 PINS
RθJA(high)
Junction-to-ambient thermal resistance (high K board)
97
RθJA(low)
Junction-to-ambient thermal resistance (low K board)
165
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
7.5 Dissipation Rating Table
PACKAGE
D
4
TA ≤ 25°C
POWER RATING
1102 mW
PACKAGE
THERMAL
IMPEDANCE
DERATING
FACTOR
ABOVE TA =
25°C
TA = 70°C
ABSOLUTE
MAXIMUM
POWER RATING
TA = 85°C
ABSOLUTE
MAXIMUM
POWER RATING
TA = 125°C
ABSOLUTE
MAXIMUM
POWER RATING
97°C/W (High K
board)
10 mW/°C
824 mW
670 mW
257 mW
165°C/W (Low K
board)
6 mW/°C
484 mW
393 mW
151 mW
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7.6 Electrical Characteristics
at specified free-air temperature, IKA = 10 mA (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
(1)
25°C
TEST
CIRCUIT
TYP
MAX
2490
2500
2510
VI(ref)
Reference input voltage
VKA = VI(ref)
VI(dev)
Deviation of reference input
voltage over full temperature
range (2)
VKA = VI(ref)
Full range
Figure 8
17
Ratio of change in reference
input voltage to the change in
cathode voltage
ΔVKA = 3 to 36 V
Full range
Figure 9
–1.1
–2
II(ref)
Reference input current
R1 = 10 kΩ,
R2 = ∞
1.5
2.5
II(dev)
Deviation of reference input
current over full temperature
range (2)
R1 = 10 kΩ,
R2 = ∞
Imin
Minimum cathode current for
regulation
VKA = VI(ref)
Ioff
Off-state cathode current
VKA = 36 V,
|zKA|
Output impedance (3)
VKA = VI(ref), ƒ ≤ 1 kHz,
IKA = 1 to 100 mA
DVI(ref)
DVKA
(1)
(2)
Full range
VI(ref) = 0
25°C
Full range
Figure 8
MIN
2470
Figure 9
2530
4
0.5
25°C
Figure 8
0.45
1
0.18
0.5
25°C
Figure 10
2
Figure 8
0.2
mV/V
μA
μA
Figure 9
Full range
mV
mV
Full range
25°C
UNIT
0.4
mA
μA
Ω
Full range is –40°C to 125°C for Q-suffix devices; –55°C to 125°C for M-suffix devices.
The deviation parameters VI(dev) and II(dev) are defined as the differences between the maximum and minimum
values obtained over the
αV
rated temperature range. The average full-range temperature coefficient of the reference input voltage I(ref) is defined as:
|
α
V
=
|(ppm
°C)
I(ref)
(
V
V
I(dev)
I(ref)
°
)
at 25 C
× 10 6
Max VI(ref)
ΔTA
VI(dev)
where:
ΔTA is the rated operating temperature range of the device.
Min VI(ref)
ΔTA
αV
I(ref)
(3)
is positive or negative, depending on whether minimum VI(ref) or maximum VI(ref), respectively, occurs at the lower temperature.
ΔVKA
z KA =
Δ I KA
The output impedance is defined as:
When the device is operating with two external resistors (see Figure 9), the total dynamic impedance of the circuit is given by:
,
z = 1 + R1
|z | = ΔV
R2 .
Δ I , which is approximately equal to KA
(
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7.7 Typical Characteristics
Data at high and low temperatures are applicable only within the recommended operating free-air temperature range.
Table 1. Table of Graphs
GRAPH TITLE
FIGURE
Reference voltage vs Free-Air Temperature
Figure 1
Reference current vs Free-Air Temperature
Figure 2
Cathode Current vs Cathode Voltage
Figure 3, Figure 4
Off-State Cathode Current vs Free-Air Temperature
Figure 5
Ratio of Delta Reference Voltage to Delta Cathode Voltage vs Free-Air Temperature
Figure 6
Equivalent Input-Noise Voltage vs Frequency
Figure 7
Equivalent Input-Noise Voltage Over a 10-s Period
Figure 11
Small-Signal Voltage Amplification vs Frequency
Figure 13
Reference Impedance vs Frequency
Figure 15
Pulse Response
Figure 17
Stability Boundary Conditions
Figure 19
2.5
Reference Current (mA)
Reference Voltage (V)
2.52
2.51
2.5
2.49
2
1.5
1
0.5
2.48
-50
-25
VI(ref) = VKA
0
25
50
75
Free-Air Temperature (qC)
100
125
IKA = 10 mA
Figure 1. Reference Voltage vs Free-Air Temperature
6
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0
-50
-25
0
25
50
75
Free-Air Temperature (qC)
D001
IKA = 10 mA
R1 = 10 kΩ
100
125
D002
R2 = ∞
Figure 2. Reference Current vs Free-Air Temperature
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150
800
600
Cathode Current (mA)
Cathode Current (mA)
100
50
0
-50
400
200
0
-100
-150
-200
-3
-2
VKA = VI(ref)
-1
0
1
Cathode Voltage (V)
2
3
-2
-1
D003
TA = 25°C
VKA = VI(ref)
Figure 3. Cathode Current vs Cathode Voltage
3
4
D004
TA = 25°C
Figure 4. Cathode Current vs Cathode Voltage
-0.85
' Ref Voltage/' Cathode Voltage (mV/V)
0.4
Off-State Cathode Current (mA)
0
1
2
Cathode Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-50
-25
VKA = 36 V
0
25
50
75
Free-Air Temperature (qC)
100
-0.95
-1.05
-1.15
-1.25
-1.35
-1.45
-50
125
-25
D005
VI(ref) = 0
0
25
50
75
Free-Air Temperature (qC)
100
125
D006
VKA = 3 to 36 V
Figure 5. Off-State Cathode Current vs Free-Air Temperature
Figure 6. Ratio of Delta Reference Voltage to Delta Cathode
Voltage vs Free-Air Temperature
Equivalent Input-Noise Voltage (nV/Hz)
260
240
220
200
180
160
140
120
100
10
100
IO = 10 mA
1k
Frequency (Hz)
10k
100k
D007
TA = 25°C
Figure 7. Equivalent Input-Noise Voltage vs Frequency
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8 Parameter Measurement Information
VKA
Input
Input
VKA
IKA
IKA
R1
VI(ref)
II(ref)
VI(ref)
R2
Figure 8. Test Circuit for V(KA) = Vref
)
(
VKA = VI(ref) 1 + R1 + II(ref) × R1
R2
Figure 9. Test Circuit for V(KA) > Vref
Input
VKA
Ioff
Figure 10. Test Circuit for Ioff
19.1 V
Equivalent Input-Noise Voltage ( PV)
6
1 kW
5
4
910 W
3
2000 mF
V CC
V CC
500 mF
TL1431
(DUT)
2
1
TLE2027
A V = 10 V/mV
820 W
+
1 mF
+
0
−
16 W
16 W
-1
TLE2027
16 W
−
2.2 mF
1 mF
160 kW
-2
33 kW
A V = 2 V/V
0.1 mF
-4
CRO 1 MW
33 kW
-3
V EE
V EE
-5
-6
0
2
4
6
Time (s)
8
10
D008
Figure 11. Equivalent Input-Noise Voltage Over a
10-s Period
8
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Figure 12. Test Circuit for 0.1- to 10-Hz Equivalent
Input-Noise Voltage
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Parameter Measurement Information (continued)
Small-Signal Voltage Amplification (dB)
60
Output
I (K)
15 kW
50
230 W
9 mF
40
30
+
8.25 kW
20
−
10
0
1k
GND
10k
100k
Frequency (Hz)
1M
10M
D009
Figure 13. Small-Signal Voltage Amplification vs
Frequency
Figure 14. Test Circuit for Voltage Amplification
1 kW
100
Reference Impedance (:)
Output
I (K)
10
50 W
−
1
+
GND
0.1
1k
10k
100k
Frequency (Hz)
1M
10M
D010
Figure 15. Reference Impedance vs Frequency
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Figure 16. Test Circuit for Reference Impedance
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Parameter Measurement Information (continued)
VI
Input and Output Voltages (V)
6
220 W
Output
Output
Input
5
4
Pulse
Generator
ƒ = 100 kHz
3
50 W
2
1
0
-1
GND
0
1
2
3
4
Time (Ps )
5
6
7
D011
Figure 17. Pulse Response
Figure 18. Test Circuit for Pulse Response
150 W
100
A
B
C
D
90
Cathode Current (mA)
80
I KA
VI
+
70
CL
60
Stable
V BATT
Stable
−
50
40
30
20
Test Circuit for Curve A
10
0
0.001
0.01
0.1
Load Capacitance (PF)
1
10
R1 =
10 kW
D012
I KA
150 W
CL
VI
+
V BATT
R2
−
Test Circuit for Curves B, C, and D
Figure 19. Stability Boundary Conditions
10
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Figure 20. Test Circuits for Curves A through D
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9 Detailed Description
9.1 Overview
The TL1431-EP is a precision-programmable reference with specified thermal stability over the military
temperature range. The device can be used in a very wide array of applications, and can enter operational mode
with as little as two external resistors.
9.2 Functional Block Diagram
CATHODE
+
REF
−
Vref
ANODE
9.3 Feature Description
The output voltage can be set to any value between VI(ref) and 36 V. Active output circuitry provides a very sharp
turnon characteristic, making the device an excellent replacement for Zener diodes and other types of references
in applications such as onboard regulation, adjustable power supplies, and switching power supplies.
TI's EP line is certified to the Aerospace Qualified Electronic Component (AQEC) Standard (ANSI/GEIA STD0002-1). The AQEC Standard was jointly developed by the aerospace and semiconductor industries to define the
minimum requirements for commercial-off-the-shelf (COTS) components used in military, avionic, aerospace,
medical and other rugged operating environments where high-reliability and long service life are required.
9.4 Device Functional Modes
The device only has one functional mode, which is enabled at power up. Operation of the device is determined
by external parameters described Application and Implementation.
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The ability to set the shunt voltage, VKA, to any voltage between VREF and the maximum rated voltage for the
shunt regulator provides a lot of flexibility. It takes two resistors to set the shunt voltage. In an ideal common
anode shunt regulator, the shunt voltage would be VREF × (R1/R2 + 1).
Real world shunt regulators have limited gain, non-zero reference input current, and suffer from cathode voltage
modulation. This application report derives comprehensive formulas that accurately represent the relationship
between the shunt voltage and feedback resistors. It also shows a practical example.
10.1.1 Shunt Regulator Limitations
Real world shunt regulators have three parameters that should be considered.
• Dynamic impedance, ZKA
• Reference pin current, IREF
• Ratio of change in reference voltage to the change in cathode voltage, ΔVREF/ΔVKA.
The first parameter will cause a VREF shift for all VKA values and the last two only apply when VKA, is set greater
than VREF.
ZKA offsets the VREF in direct proportion to the cathode current. The data sheet generally specifies VREF at a
specific current. At any other current ZKA impacts VREF.
IREF causes an inequality in the feedback resistor currents which changes the effective DC feedback ratio. This
factor is often included in data sheet formulas.
ΔVREF/ΔVKA specifies how much the VREF voltage changes when the cathode voltage changes. This is a
frequently ignored factor although the effect can be significant.
10.2 Typical Application
R
V(BATT)
VO
R1
0.1%
VI(ref)
TL1431
R2
0.1%
R1 ö
æ
VO = ç 1 +
VI(ref)
R2 ÷ø
è
NOTE: R should provide cathode current ≥1 mA to the TL1431-EP at minimum V(BATT).
Figure 21. Shunt Regulator
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Typical Application (continued)
10.2.1 Design Requirements
To calculate the values for resistors R1 and R2, the values of the following parameters must be known: the
feedback current, (IFB), cathode current, (IKA), and desired shunt voltage, (VKA).
VKA
IFB
Input
IKA
R1
U1 TL431
VREF
R2
IREF
The Electrical Characteristics table specifies when VKA = VREF and IKA is 10 mA the nominal VREF, (labeled VNOM)
is 2.5 V. The reference voltage varies with cathode voltage at two different rates. The reference voltage is –1.1
mV/V from VREF to 10 V then –1.5 mV/V above 10 V. The reference pin current is 4 µA.
The ZKA parameter offsets VREF by (IKA – INOM) × ZKA .
In addition, the ΔVREF / ΔVKA parameter offsets VREF by either –1.1 mV × (VKA – 2.5 V) if VKA ≤ 10 V or –8.25 mV
–1.5 mV/V × (VKA – 10 V) if VKA>10 V. The –8.25-mV constant is the VREF offset as VKA changes from
VNOM to 10 V, (10 V – 2.5 V) × –1.1 mV/V.
Therefore:
If VKA ≤ 10 V then;
VREF = VNOM + (IKA – INOM) x ZKA + (VKA – VNOM) × –1.1 mV/V
(1)
If VKA > 10 then;
VREF = VNOM + (IKA – INOM) × ZKA + (VKA – 10 V) x –1.5 mV/V –8.25 mV
(2)
spacer
Now that the value of VREF is calculated, use Equation 1 and Equation 2 to calculate the value of R1 and R2.
R1 = (VKA – VREF) / IFB
R2 = VREF / (IFB – IREF)
(3)
(4)
NOTE
R2 has less current than R1.
10.2.2 Detailed Design Procedure
The goal of the design is: the TL1431 cathode set to 12 V, the cathode current at 2 mA, and a feedback current
of 0.2 mA.
Using the formula derived in the general example for VKA>10 V.
VREF = VNOM + (IKA – INOM) × ZKA + (VKA – 10 V) × -1.1 mV – 8.25 mV
VREF = 2.500 V + (2 mA – 10 mA) x 2 Ω+ (12 V – 10 V) × –1.1 mV – 8.25 mV
(5)
(6)
Using Equation 5 and Equation 6, the value of VREF = 2.473 V
spacer
R1 = (VKA – VREF) / IFB
R1 = (12 V – 2.473 V) / 0.2 mA
(7)
(8)
Using Equation 7 and Equation 8, the value of R1 = 46.285 kΩ
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Typical Application (continued)
spacer
R2 = VREF / (IFB – IREF)
R2 = 2.473 V / (0.2 mA – 4 µA)
(9)
(10)
Using Equation 9 and Equation 10, the value of R2 = 12.617 kΩ
The closest standard 1% resistor values are R1 = 46.4 kΩ and R2 = 12.7 kΩ. Other resistor combinations may
provide a shunt voltage that is centered better. A formula to test for R1 values that may be closer to standard
values using standard R2 resistors is R1= (VKA – VREF) / (VREF / R2 + IREF).
10.2.3 Application Curves
100
6
90
Cathode Current (mA)
80
Input and Output Voltages (V)
A
B
C
D
70
60
Stable
Stable
50
40
30
20
Output
Input
5
4
3
2
1
10
0
0.001
0.01
0.1
Load Capacitance (PF)
1
10
D012
Figure 22. Stability Bounderies for load capacitance on
Shunt Regulator
0
-1
0
1
2
3
4
Time (Ps )
5
6
7
D011
Figure 23. Pulse Response at Startup of Shunt Regulator
11 Power Supply Recommendations
Do not exceed the values listed in the Recommended Operating Conditions and Electrical Characteristics. To
ensure proper operation, deliver a minimum of 1 mA of current to the cathode. Ensure that the power source can
provide at least 1 mA of current across the entire voltage range.
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12 Layout
12.1 Layout Guidelines
Pins 2, 3, 6, and 7 are connected internally to the anode. For the most precision, tie these pins together
externally as well. Resistors should be placed as close as possible to the device.
12.2 Layout Example
Copyright © 2004–2015, Texas Instruments Incorporated
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15
TL1431-EP
SLVS529D – APRIL 2004 – REVISED JANUARY 2015
www.ti.com
13 Device and Documentation Support
13.1 Trademarks
All trademarks are the property of their respective owners.
13.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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Copyright © 2004–2015, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TL1431MDREP
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
1431ME
TL1431MDREPG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
1431ME
TL1431QDREP
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1431QE
V62/04756-01XE
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1431QE
V62/04756-02XE
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
1431ME
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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