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TL4050B41QDBZRQ1

TL4050B41QDBZRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT-23

  • 描述:

    IC VREF SHUNT 0.2% SOT23-3

  • 数据手册
  • 价格&库存
TL4050B41QDBZRQ1 数据手册
TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE Check for Samples: TL4050-Q1 FEATURES 1 • • • • • • Qualified for Automotive Applications Fixed Output Voltages of 2.048 V, 2.5 V, 4.096 V, 5 V Tight Output Tolerances and Low Temperature Coefficient – Max 0.1%, 50 ppm/°C – A Grade – Max 0.2%, 50 ppm/°C – B Grade – Max 0.5%, 50 ppm/°C – C Grade Low Output Noise: 41 μVRMS Typ Wide Operating Current Range: 60 μA Typ to 15 mA Stable With All Capacitive Loads; No Output DBZ (SOT-23-3) PACKAGE (TOP VIEW) CATHODE 1 3 * ANODE 2 « Pin 3 is attached to Substrate and must be connected to ANODE or left open. • Capacitor Required Available in Extended Temperature Range: –40°C to 125°C APPLICATIONS • • • • • • • • Data-Acquisition Systems Power Supplies and Power-Supply Monitors Instrumentation and Test Equipment Process Controls Precision Audio Automotive Electronics Energy Management Battery-Powered Equipment DCK (SC-70) PACKAGE (TOP VIEW) ANODE NC CATHODE 1 5 NC 4 NC 2 3 NC – No internal connection DESCRIPTION The TL4050-Q1 family of shunt voltage references are versatile easy-to-use references suitable for a wide array of applications. The two-terminal fixed-output device requires no external capacitors for operation and is stable with all capacitive loads. Additionally, the reference offers low dynamic impedance, low noise, and low temperature coefficient to ensure a stable output voltage over a wide range of operating currents and temperatures. The TL4050-Q1 is available in three initial tolerances, ranging from 0.1% (maximum) for the A grade to 0.5% (maximum) for the C grade. Thus, a great deal of flexibility is available to designers in choosing the best cost-to-performance ratio for their applications. Packaged in the space-saving SOT-23-3 and SC-70 packages and requiring a minimum current of 45 μA (typical), the TL4050-Q1 also is ideal for portable applications. The TL4050x-Q1 characterization is for operation over an ambient temperature range of –40°C to 125°C. PACKAGE AND ORDERING INFORMATION For the most-current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 SLOS588F – JUNE 2008 – REVISED APRIL 2013 www.ti.com FUNCTIONAL BLOCK DIAGRAM CATHODE + _ ANODE ABSOLUTE MAXIMUM RATINGS (1) over free-air temperature range (unless otherwise noted) MIN IZ Continuous cathode current TJ Operating virtual junction temperature Tstg Storage temperature range (1) 2 –10 –65 MAX UNIT 20 mA 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 THERMAL INFORMATION TL4050-Q1 THERMAL METRIC (1) Junction-to-ambient thermal resistance (2) θJA (3) DBZ DCK 3 PINS 5 PINS UNIT 331.1 289.9 °C/W θJCtop Junction-to-case (top) thermal resistance 107.5 56.4 °C/W θJB Junction-to-board thermal resistance (4) 63.4 93 °C/W ψJT Junction-to-top characterization parameter (5) 4.9 0.7 °C/W ψJB Junction-to-board characterization parameter (6) 61.7 91.4 °C/W θJCbot Junction-to-case (bottom) thermal resistance (7) N/A N/A °C/W (1) (2) (3) (4) (5) (6) (7) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer RECOMMENDED OPERATING CONDITIONS IZ TA (1) MIN MAX (1) 15 I temperature –40 85 Q temperature –40 125 Cathode current Free-air temperature UNIT mA °C See parametric tables Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 TL4050-Q1 SLOS588F – JUNE 2008 – REVISED APRIL 2013 www.ti.com TL4050x20-Q1 ELECTRICAL CHARACTERISTICS at extended temperature range, full range TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS VZ Reverse breakdown voltage IZ = 100 μA ΔVZ Reverse breakdown voltage tolerance IZ = 100 μA IZ,min Minimum cathode current αVZ IZ = 10 mA Average temperature IZ = 1 mA coefficient of reverse breakdown IZ = 100 μA voltage DVZ DI Z Reverse breakdown voltage change with cathode current change TA TL4050A20-Q1 MIN 25°C TYP 2.048 TYP TL4050C20-Q1 MAX MIN 2.048 TYP MAX 2.048 2.048 –4.096 4.096 –10.24 10.24 Full range –12.288 12.288 –14.7456 14.7456 –17.2032 17.2032 41 60 41 65 60 41 65 ±20 ±20 ±20 25°C ±15 ±15 ±15 25°C ±15 ±15 ±15 Full range 25°C ±50 0.3 Full range 25°C 0.8 ±50 0.3 1.2 2.3 Full range 6 0.8 8 6 μA ppm/°C ±50 0.3 1.2 2.3 mV 60 65 25°C UNIT V –2.048 Full range 1 mA < IZ < 15 mA MIN 25°C 25°C IZ,min < IZ < 1 mA TL4050B20-Q1 MAX 0.8 1.2 2.3 8 6 mV 8 ZZ Reverse dynamic impedance IZ = 1 mA, f = 120 Hz, IAC = 0.1 IZ 25°C 0.3 0.3 0.3 Ω eN Wideband noise IZ = 100 μA, 10 Hz ≤ f ≤ 10 kHz 25°C 34 34 34 μVRMS Long-term stability of reverse breakdown voltage t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100 μA 120 120 120 ppm Thermal hysteresis (1) ΔTA = –40°C to 125°C 0.7 0.7 0.7 mV VHYST (1) 4 Thermal hysteresis is defined as VZ,25°C (after cycling to –40°C) – VZ,25°C (after cycling to 125°C). Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 TL4050x25-Q1 ELECTRICAL CHARACTERISTICS at extended temperature range, full range TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA TL4050B25-Q1 MIN TYP MAX Reverse breakdown voltage IZ = 100 μA 25°C ΔVZ Reverse breakdown voltage IZ = 100 μA tolerance 25°C –5 5 Full range –18 18 IZ,min Minimum cathode current αVZ Average temperature coefficient of reverse breakdown voltage VZ DVZ DI Z Reverse breakdown voltage change with cathode current change 2.5 25°C 41 Full range 25°C ±20 IZ = 1 mA 25°C ±15 25°C ±15 IZ,min < IZ < 1 mA 1 mA < IZ < 15 mA V mV 60 μA 65 IZ = 10 mA IZ = 100 μA UNIT Full range ppm/°C ±50 25°C 0.3 Full range 0.8 1.2 25°C 2.3 Full range mV 6 8 ZZ Reverse dynamic impedance IZ = 1 mA, f = 120 Hz, IAC = 0.1 IZ eN Wideband noise IZ = 100 μA, 10 Hz ≤ f ≤ 10 kHz Long-term stability of reverse breakdown voltage t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100 μA 120 ppm Thermal hysteresis (1) ΔTA = –40°C to 125°C 0.7 mV VHYST (1) 25°C 0.3 Ω 25°C 41 μVRMS Thermal hysteresis is defined as VZ,25°C (after cycling to –40°C) – VZ,25°C (after cycling to 125°C). Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 TL4050-Q1 SLOS588F – JUNE 2008 – REVISED APRIL 2013 www.ti.com TL4050x41-Q1 ELECTRICAL CHARACTERISTICS at extended temperature range, full range TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA TL4050B41-Q1 MIN TYP MAX Reverse breakdown voltage IZ = 100 μA 25°C ΔVZ Reverse breakdown voltage IZ = 100 μA tolerance 25°C –8.2 8.2 Full range –29 29 IZ,min Minimum cathode current αVZ Average temperature coefficient of reverse breakdown voltage VZ DVZ DI Z Reverse breakdown voltage change with cathode current change 25°C 25°C ±30 IZ = 1 mA 25°C ±20 25°C ±20 IZ = 100 μA IZ,min < IZ < 1 mA 1 mA < IZ < 15 mA Reverse dynamic impedance eN Wideband noise IZ = 100 μA, 10 Hz ≤ f ≤ 10 kHz Long-term stability of reverse breakdown voltage t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100 μA Thermal hysteresis (1) ΔTA = –40°C to 125°C 6 V 68 78 IZ = 10 mA ZZ (1) 52 Full range IZ = 1 mA, f = 120 Hz, IAC = 0.1 IZ VHYST 4.096 Full range UNIT mV μA ppm/°C ±50 25°C 0.2 Full range 0.9 1.2 25°C 2 Full range 7 mV 10 25°C 0.5 Ω 25°C 93 μVRMS 120 ppm 1.148 mV Thermal hysteresis is defined as VZ,25°C (after cycling to –40°C) – VZ,25°C (after cycling to 125°C). Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 TL4050x50-Q1 ELECTRICAL CHARACTERISTICS at extended temperature range, full range TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA TL4050A50-Q1 MIN TYP TL4050B50-Q1 MAX MIN TYP TL4050C50-Q1 MAX MIN TYP MAX VZ Reverse breakdown voltage IZ = 100 μA 25°C Reverse breakdown IZ = 100 μA voltage tolerance 25°C –5 5 –10 10 –25 25 ΔVZ Full range –30 30 –35 35 –50 50 IZ,min Minimum cathode current IZ = 10 mA 25°C ±30 ±30 ±30 IZ = 1 mA 25°C ±20 ±20 ±20 αVZ Average temperature coefficient of reverse breakdown voltage 25°C ±20 ±20 ±20 Reverse breakdown voltage change with cathode current change IZ,min < IZ < 1 mA 25°C IZ = 100 μA 1 mA < IZ < 15 mA I = 1 mA, Reverse dynamic Z f = 120 Hz, impedance IAC = 0.1 IZ eN Wideband noise IZ = 100 μA, 10 Hz ≤ f ≤ 10 kHz Long-term stability of reverse breakdown voltage Thermal hysteresis (1) (1) 5 74 5 56 74 90 Full range 0.2 1 0.2 1 Full range 8 8 12 mV 74 μA ppm/°C ±50 0.2 1.4 2 V 90 ±50 1.4 2 56 90 ±50 Full range 25°C ZZ VHYST 56 Full range 25°C DVZ DI Z 5 UNIT 1 1.4 2 12 8 mV 12 25°C 0.5 0.5 0.5 Ω 25°C 93 93 93 μVRMS t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100 μA 120 120 120 ppm ΔTA = –40°C to 125°C 1.4 1.4 1.4 mV Thermal hysteresis is defined as VZ,25°C (after cycling to –40°C) – VZ,25°C (after cycling to 125°C). Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 TL4050-Q1 SLOS588F – JUNE 2008 – REVISED APRIL 2013 www.ti.com TYPICAL CHARACTERISTICS OUTPUT IMPEDANCE versus FREQUENCY 1000 IZ = IZ(MIN) + 100 µA IZ = 1 mA Output Impedance – W Output Impedance – W 1000 OUTPUT IMPEDANCE versus FREQUENCY 100 VKA = 10 V 10 VKA = 2.5 V 1 100 10 VKA = 10 V 1 VKA = 2.5 V 0.1 100 1k 10k 100k 0.1 100 1M 1k 1M Figure 2. REVERSE CHARACTERISTICS AND MINIMUM OPERATING CURRENT NOISE VOLTAGE versus FREQUENCY 100 10 80 8 Noise Voltage – µV/ÖHz Reverse Current – A 100k Frequency – Hz Frequency – Hz Figure 1. VKA = 2.5 V 60 10k VKA = 10 V 40 20 6 4 VKA = 10 V 2 VKA = 2.5 V 0 0 0 1 2 3 4 5 6 7 Reverse Voltage (V) Figure 3. 8 Submit Documentation Feedback 8 9 10 1 10 100 1k 10k 100k Frequency – Hz Figure 4. Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 TYPICAL CHARACTERISTICS (continued) LARGE SIGNAL PULSE RESPONSE LARGE SIGNAL PULSE RESPONSE 6 20 VKA = 2.5 V VKA = 10 V 5 15 Voltage – V Voltage – V 4 3 2 10 5 1 0 0 -1 -20 0 20 40 60 Time – µs Figure 5. Copyright © 2008–2013, Texas Instruments Incorporated 80 -5 -100 0 100 200 300 400 Time – µs Figure 6. Submit Documentation Feedback 9 TL4050-Q1 SLOS588F – JUNE 2008 – REVISED APRIL 2013 www.ti.com APPLICATION INFORMATION RS VIN TL4050-Q1 VZ 1-Hz Rate Figure 7. Start-Up Test Circuit Output Capacitor The TL4050-Q1 does not require an output capacitor across cathode and anode for stability. However, in an application using an output bypass capacitor, the TL4050-Q1 is stable with all capacitive loads. SOT-23-3 Pin Connections There is a parasitic Schottky diode connected between pins 2 and 3 of the SOT-23-3 packaged device. Thus, pin 3 of the SOT-23-3 package must be left floating or connected to pin 2. Use With ADCs or DACs The design of the TL4050x41-Q1 is as a cost-effective voltage reference, as required in 12-bit data-acquisition systems. For 12-bit systems operating from 5-V supplies, such as the ADS7842 (see Figure 8), the TL4050x41Q1 (4.096 V) permits operation with an LSB of 1 mV. ADS7842 0 V to VREF 1 AIN0 5V 2 AIN1 909 + 2.2 mF TL4050B41-Q1 VANA VDIG 28 27 3 AIN2 A1 26 4 AIN3 A0 25 5 VREF CLK 24 6 AGND 7 DB11 + 0.1 mF + 5-V Analog Supply 10 mF 3.2-MHz Clock BUSY 23 BUSY Output Write Input WR 22 8 DB10 CS 21 9 DB9 RD 20 10 DB8 DB0 19 11 DB7 DB1 18 12 DB6 DB2 17 13 DB5 DB3 16 14 DGND DB4 15 Read Input Figure 8. Data-Acquisition Circuit With TL4050x41-Q1 10 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated TL4050-Q1 www.ti.com SLOS588F – JUNE 2008 – REVISED APRIL 2013 Cathode and Load Currents In a typical shunt-regulator configuration (see Figure 9), an external resistor, RS, connects between the supply and the cathode of the TL4050-Q1. Proper choice of RS is essential, as RS sets the total current available to supply the load (IL) and bias the TL4050-Q1 (IZ). In all cases, IZ must stay within a specified range for proper operation of the reference. Taking into consideration one extreme in the variation of the load and supply voltage (maximum IL and minimum VS), RS must be small enough to supply the minimum IZ required for operation of the regulator, as given by data-sheet parameters. At the other extreme, maximum VS and minimum IL, RS must be large enough to limit IZ to less than its maximum-rated value of 15 mA. Equation 1 calculates RS: ǒVS * VZǓ RS + (I L ) I Z) (1) VS RS IZ + IL IL VZ TL4050-Q1 IZ Figure 9. Shunt Regulator Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 11 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TL4050A50QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TLGU TL4050A50QDCKRQ1 ACTIVE SC70 DCK 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 7GU TL4050B25QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TLHU TL4050B25QDCKRQ1 ACTIVE SC70 DCK 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 7HU TL4050B41QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TMXU TL4050B50QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TLJU TL4050B50QDCKRQ1 ACTIVE SC70 DCK 5 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 7JU TL4050C20QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TMYU TL4050C50QDBZRQ1 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TKZU (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TL4050B41QDBZRQ1 价格&库存

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TL4050B41QDBZRQ1
    •  国内价格
    • 1000+6.60000

    库存:6010