TL5580IDG4

TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 FEATURES APPLICATIONS • • • • • • • • • • • • Operating Voltage…±2 V to ±18 V Low Offset Voltage…1 mV Max at 25°C, TL5580A Wide GBW…12 MHz Typ Slew Rate…5 V/µs Typ Low THD…0.0005% Typ Low-Noise Voltage…7 nV/√Hz at 1 kHz Typ Audio Test Equipment Industrial Process Controls Data-Acquisition Systems Active Filters Power-Supply Regulation D, P, OR PW PACKAGE (TOP VIEW) 1OUT 1IN− 1IN+ VCC− 1 8 2 7 3 6 4 5 VCC+ 2OUT 2IN− 2IN+ DESCRIPTION/ORDERING INFORMATION The TL5580 is a dual bipolar operational amplifier that combines both high dc and ac performance with its low offset voltage, high-gain bandwidth, low harmonic distortion, and low-noise characteristics. In addition, its output is capable of driving 600-Ω loads. All these characteristics make the device ideally suited for use in audio, active filtering, and industrial measurement applications. ORDERING INFORMATION TA VIO (25°C, MAX) PACKAGE (1) PDIP – P Standard grade 1.5 mV SOIC – D TSSOP – PW –40°C to 85°C PDIP – P A grade 1 mV SOIC – D TSSOP – PW (1) ORDERABLE PART NUMBER Tube of 50 TL5580IP Tube of 75 TL5580ID Reel of 2500 TL5580IDR Tube of 150 TL5580IPW Reel of 2000 TL5580IPWR Tube of 50 TL5580AIP Tube of 75 TL5580AID Reel of 2500 TL5580AIDR Tube of 150 TL5580AIPW Reel of 2000 TL5580AIPWR TOP-SIDE MARKING TL5580IP Z5580 Z5580 TL5580AIP Z5580A Z5580A Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005, Texas Instruments Incorporated TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 EQUIVALENT SCHEMATIC VCC+ Output − Input + Input VCC− 2 TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MAX UNIT VCC± Supply voltage MIN ±18 V VI Input voltage (any input) ±15 V VID Differential input voltage ±30 V IO Output current ±50 mA D package θJA Package thermal impedance (2) (3) 97 P package 85 PW package TJ Operating virtual junction temperature Tstg Storage temperature range (1) (2) (3) °C/W 149 –60 150 °C 125 °C Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. The package thermal impedance is calculated in accordance with JESD 51-7. Recommended Operating Conditions VCC+ VCC– TA Supply voltage Operating free-air temperature MIN MAX 2 16 –2 –16 –40 85 UNIT V °C 3 TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 Electrical Characteristics VCC± = ±15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TL5580A VIO αVIO IIO Input offset current IIB Input bias current AVD Large-signal differential-voltage amplification Output voltage swing 1 0.3 1.8 25°C 5 –40°C to 85°C 100 –40°C to 85°C Common-mode input voltage range CMRR Common-mode rejection ratio RS ≤ 10 kΩ, VICR = –12 V to 12 V kSVR (1) Supply-voltage rejection ratio RS ≤ 10 kΩ ICC Supply current (all amplifiers) 25°C 90 87 12.75 – 12.25 –40°C to 85°C 12.5 –12 25°C ±13 –40°C to 85°C ±12 25°C 90 –40°C to 85°C 85 25°C 85 –40°C to 85°C 83 25°C –40°C to 85°C 75 500 800 –40°C to 85°C RL ≥ 2 kΩ 5 100 25°C RL ≥ 2 kΩ, VO = ±10 V 1.5 UNIT mV 2 –40°C to 85°C VICR (1) MAX 0.3 –40°C to 85°C 25°C VOM TYP 1.35 25°C TL5580 Average temperature coefficient of input offset voltage MIN –40°C to 85°C RS ≤ 10 kΩ Input offset voltage TA 25°C 110 µV/°C nA nA dB ±13.5 V ±13.5 V 110 dB 110 6 dB 9 12 mA Measured with VCC± varied simultaneously Operating Characteristics VCC± = ±15 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS SR Slew rate at unity gain RL ≥ 2 kΩ GBW Gain bandwidth product f = 10 kHz THD Total harmonic distortion VO = 5 V, RL = 2 kΩ, f = 1 kHz, AVD = 20 dB Vn Equivalent input noise voltage f = 1 kHz 4 TYP UNIT 5 V/µs 12 MHz 0.0005 7 % nV/√Hz TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 TYPICAL CHARACTERISTICS MAXIMUM OUTPUT VOLTAGE SWING vs LOAD RESISTANCE MAXIMUM OUTPUT VOLTAGE SWING vs FREQUENCY 30 VO − Maximum Output Voltage Swing − V VO − Maximum Output Voltage Swing − V 15 VCC± = ±15 V TA = 25°C 10 VOM+ 5 0 −5 VOM− −10 25 20 15 10 −15 1k 100 V+/V− = ±15 V RL = 2 kΩ TA = 25°C 5 0 1 5 10 50 60 70 80 100 200 300 500 700 1M 10M 10k Frequency − kHz RL − Load Resistance − Ω Figure 1. Figure 2. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY Vn − Equivalent Input Noise Voltage − nV/ Hz 20 VCC± = ±15 V VO − Output Voltage Swing − V 15 VOM+ 10 5 0 −5 −10 VOM− −15 −20 1 10 100 IO − Output Current − mA Figure 3. 1000 30 VCC± = ±1.5 V RS = 50 Ω AV = 60 dB TA = 25°C 20 10 0 10 100 1k Frequency − Hz 10k 100k Figure 4. 5 TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 TYPICAL CHARACTERISTICS (continued) OPERATING CURRENT vs TEMPERATURE OUTPUT VOLTAGE SWING vs TEMPERATURE 18 15 VCC± = ±15 V VOM+ V O − Output Voltage Swing − V ICC − Operating Current − mA 16 14 12 10 8 6 4 VCC± = 15 V RL = 2 kΩ 10 5 0 −5 −10 2 VOM− 0 −55 −15 −40 0 25 70 85 125 −55 TA − Ambient Temperature − °C 0 25 70 85 105 TA − Ambient Temperature − °C Figure 5. Figure 6. INPUT OFFSET VOLTAGE vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE 400 0 VCC± = ±15 V Five Representative Units VCC± = ±15 V −50 IIB − Input Bias Current − nA VIO − Input Offset Voltage − µV −40 −100 −150 −200 −250 −300 −350 −400 300 200 100 −450 −500 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TA − Ambient Temperature − °C Figure 7. 6 0 −40 0 25 70 TA − Ambient Temperature − °C Figure 8. 85 TL5580, TL5580A DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER www.ti.com SLOS477A – JUNE 2005 – REVISED JULY 2005 TYPICAL CHARACTERISTICS (continued) MAXIMUM OUTPUT VOLTAGE SWING vs OPERATING VOLTAGE OPERATING CURRENT vs OPERATING VOLTAGE 7 +VOM 6 10 5 0 −5 −10 5 4 3 2 −VOM 1 −15 ±5 0 0.1 ±10 ±15 0 ±0 ±20 ±2 ±4 ±8 ±10 Figure 9. Figure 10. TOTAL HARMONIC DISTORTION vs OUTPUT VOLTAGE VOLTAGE GAIN, PHASE vs FREQUENCY VCC± = ±15 V RL = 2 kΩ 40-dB Amplification TA = 25°C 40 Voltage Gain − dB 0.01 20 kHz 20 Hz 30 1 VO − Output Voltage − V Figure 11. 10 0 −30 −90 25 −120 20 −150 15 −180 10 −210 5 −240 0 0.1 ±16 −60 Phase Gain 1 kHz ±14 30 45 35 0.0001 ±12 VCC+/VCC− − Operating Voltage − V VCC± = ±15 V Gain = 20 dB RL = 2 kΩ 0.001 ±6 VCC+/VCC− − Operating Voltage − V 10k 100k 1M Frequency − Hz Phase − Deg 15 −20 THD − Total Harmonic Distortion − % TA = 25°C TA = 25°C RL = 2 kΩ ICC − Operating Current − mA V O − Maximum Output Voltage Swing − V 20 −270 10M Figure 12. 7 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TL5580AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 Z5580A TL5580AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 Z5580A TL5580AIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TL5580AIP TL5580AIPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 Z5580A TL5580IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 Z5580 TL5580IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TL5580IP TL5580IPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 Z5580 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of