TLV1171
www.ti.com
SBVS177 – APRIL 2012
1-A, Positive Fixed-Voltage, Low-Dropout Regulator
FEATURES
DESCRIPTION
•
•
The TLV1171 low-dropout (LDO) linear regulator is a
low input voltage version of the popular 1117 voltage
regulator.
1
2
•
•
•
•
•
•
•
•
•
Accuracy: 1.5% (typ)
Low IQ: 100 μA (max)
– 500x Lower Than Standard 1117 Devices
VIN: 2.0 V to 5.5 V
– Absolute Maximum VIN: 6.0 V
Stable with 0-mA Output Current
Low Dropout: 455 mV at 1 A for VOUT = 3.3 V
High PSRR: 65 dB at 1 kHz
Minimum Ensured Current Limit: 1.1 A
Stable with Cost-Effective Ceramic Capacitors:
– With 0-Ω ESR
Temperature Range: –40°C to +125°C
Thermal Shutdown and Overcurrent Protection
Available Package: SOT223
– See the Package Option Addendum at the
end of this document for a complete list of
available voltage options.
APPLICATIONS
•
•
•
•
•
Set Top Boxes
TVs and Monitors
PC Peripherals, Notebooks, and Motherboards
Modems and Other Communication Products
Switching Power-Supply Post-Regulation
The TLV1171 is an extremely low-power device that
consumes 500x lower quiescent current than the
traditional 1117 voltage regulator, making the
TLV1171 suitable for applications that mandate very
low standby current. The TLV1171 LDO is also stable
with 0 mA of load current; there is no minimum load
requirement, making the device an ideal choice for
applications where the regulator is required to power
very small loads during standby in addition to large
currents on the order of 1 A during normal operation.
The TLV1171 offers excellent line and load transient
performance, resulting in very small magnitude output
voltage undershoots and overshoots when the load
current requirement changes from less than 1 mA to
more than 500 mA.
A precision band gap and error amplifier provides
1.5% accuracy. A very high power-supply rejection
ratio enables the device to be used for postregulation after a switching regulator. Other valuable
features include low output noise and low-dropout
voltage.
The device is internally compensated to be stable
with 0-Ω equivalent series resistance (ESR)
capacitors. These key advantages enable the use of
cost-effective, small-size ceramic capacitors. Costeffective capacitors that have higher bias voltages
and temperature derating can also be used if desired.
The TLV1171 is available in a SOT223 package. For
alternate pin outs of the device, refer to the
TLV1117LV.
GND
TLV1171xxDCY
3
VOUT
2
GND
1
VIN
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TLV1171
SBVS177 – APRIL 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
PRODUCT
TLV1171vvyyyz
(1)
VOUT
VV is the nominal output voltage (for example, 33 = 3.3 V).
YYY is the package designator.
Z is the package quantity. Use R for reel (2500 pieces), and T for tape (250 pieces).
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
At TJ = +25°C, unless otherwise noted. All voltages are with respect to GND.
VALUE
Voltage
Current
MIN
MAX
UNIT
Input voltage range, VIN
–0.3
+6.0
V
Output voltage range, VOUT
–0.3
+6.0
V
Maximum output current, IOUT
Internally limited
Output short-circuit duration
Indefinite
Continuous total power dissipation
Temperature
See Thermal Information Table
Operating junction, TJ
–55
+150
°C
Storage, Tstg
–55
+150
°C
2
kV
500
V
Human body model (HBM)
QSS 009-105 (JESD22-A114A)
Electrostatic discharge (ESD)
ratings
(1)
PDISS
Charged device model (CDM)
QSS 009-147 (JESD22-C101B.01)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
THERMAL INFORMATION
TLV1171
THERMAL METRIC (1)
DCY (SOT223)
UNITS
3 PINS
θJA
Junction-to-ambient thermal resistance
62.9
θJCtop
Junction-to-case (top) thermal resistance
47.2
θJB
Junction-to-board thermal resistance
12.0
ψJT
Junction-to-top characterization parameter
6.1
ψJB
Junction-to-board characterization parameter
11.9
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
°C/W
space
(1)
2
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A.
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TLV1171
www.ti.com
SBVS177 – APRIL 2012
ELECTRICAL CHARACTERISTICS
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V, IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
TLV1171
PARAMETER
VIN
TEST CONDITIONS
MIN
Input voltage range
VOUT > 2 V
VOUT
DC output accuracy
1.5 V ≤ VOUT < 2 V
1.2 V ≤ VOUT < 1.5 V
TYP
MAX
UNIT
2.0
5.5
V
–1.5
+1.5
%
–2
+2
%
–40
+40
mV
ΔVO/ΔVIN
Line regulation
VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA
1
5
mV
ΔVO/ΔIOUT
Load regulation
0 mA ≤ IOUT ≤ 1 A
1
35
mV
VOUT < 3.3 V
Dropout voltage (1)
VDO
VIN = 0.98 x VOUT(NOM)
VOUT ≥ 3.3 V
IOUT = 200 mA
115
mV
IOUT = 500 mA
285
mV
IOUT = 800 mA
455
mV
IOUT = 1 A
570
800
mV
IOUT = 200 mA
90
mV
IOUT = 500 mA
230
mV
IOUT = 800 mA
365
IOUT = 1 A
455
700
mV
100
µA
mV
ICL
Output current limit
VOUT = 0.9 × VOUT(NOM)
IQ
Quiescent current
IOUT = 0 mA
50
PSRR
Power-supply rejection ratio
VIN = 3.3 V, VOUT = 1.8 V, IOUT = 500 mA, f = 100 Hz
65
dB
VN
Output noise voltage
BW = 10 Hz to 100 kHz, VIN = 2.8 V, VOUT = 1.8 V, IOUT = 500 mA
60
µVRMS
tSTR
Startup time (2)
COUT = 1.0 µF, IOUT = 1 A
100
µs
UVLO
Undervoltage lockout
VIN rising
1.95
V
TSD
Thermal shutdown
temperature
Shutdown, temperature increasing
+165
°C
Reset, temperature decreasing
+145
°C
TJ
Operating junction
temperature
(1)
(2)
1.1
–40
A
+125
°C
VDO is measured for devices with VOUT(NOM) = 2.5 V so that VIN = 2.45 V.
Startup time is the time from when VIN asserts to when output is sustained at a value greater than or equal to 0.98 × VOUT(NOM).
Copyright © 2012, Texas Instruments Incorporated
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TLV1171
SBVS177 – APRIL 2012
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PIN CONFIGURATION
GND
DCY PACKAGE
SOT223
(TOP VIEW)
3
VOUT
2
GND
1
VIN
PIN DESCRIPTIONS
NAME
PIN
GND
2, Tab
DESCRIPTION
IN
1
Input pin.
See the Input and Output Capacitor Requirements section for more details.
OUT
3
Regulated output voltage pin.
See the Input and Output Capacitor Requirements section for more details.
Ground pin
FUNCTIONAL BLOCK DIAGRAM
IN
OUT
Current
Limit
Thermal
Shutdown
UVLO
Bandgap
LOGIC
TLV1171 Series
GND
Figure 1. Block Diagram
4
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TLV1171
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SBVS177 – APRIL 2012
TYPICAL CHARACTERISTICS
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
LINE REGULATION
LINE REGULATION
1.9
1.9
1.85
1.8
+125°C
+85°C
+25°C
-40°C
1.75
VOUT = 1.8 V
IOUT = 1 A
Output Voltage (V)
Output Voltage (V)
VOUT = 1.8 V
IOUT = 10 mA
1.85
1.8
1.75
1.7
+85°C
+25°C
-40°C
1.7
2.3
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
3.3 3.5
3.7
3.9
Input Voltage (V)
4.1 4.3
4.5
4.7
4.9
5.1 5.3
Figure 2.
Figure 3.
LOAD REGULATION
DROPOUT VOLTAGE vs INPUT VOLTAGE
1200
1.9
VOUT = 1.8 V
+85°C
+25°C
-40°C
1.85
1.8
+125°C
+85°C
+25°C
-40°C
1.75
Dropout Voltage (mV)
1000
Output Voltage (V)
5.5
Input Voltage (V)
800
600
400
200
0
1.7
0
100
200 300
400 500 600 700 800 900 1000
2
2.5
3
Output Current (mA)
4
3.5
4.5
Input Voltage (V)
Figure 4.
Figure 5.
DROPOUT VOLTAGE vs OUTPUT CURRENT
OUTPUT VOLTAGE vs TEMPERATURE
1.9
600
VOUT = 1.8 V
400
300
200
+125°C
+85°C
+25°C
-40°C
100
Output Voltage (V)
Dropout Voltage (mV)
500
1.85
1.8
1.75
10 mA
500 mA
1.7
0
0
100 200 300 400 500 600 700 800 900 1000
Output Current (mA)
Figure 6.
Copyright © 2012, Texas Instruments Incorporated
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Figure 7.
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SBVS177 – APRIL 2012
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
QUIESCENT CURRENT vs OUTPUT CURRENT
CURRENT LIMIT vs INPUT VOLTAGE
1.8
600
1.78
1.76
400
300
200
+125°C
+85°C
+25°C
-40°C
100
Current Limit (mA)
Quiescent Current (mA)
500
1.74
1.72
1.7
1.68
1.66
1.64
+85°C
+25°C
-40°C
1.62
1.6
0
0
3.3 3.5
100 200 300 400 500 600 700 800 900 1000
3.7
3.9
4.1 4.3
Figure 8.
PSRR vs FREQUENCY
PSRR vs FREQUENCY
IOUT = 500 mA
IOUT = 150 mA
IOUT = 30 mA
80
70
60
50
40
30
20
10
VIN - VOUT = 3 V
10
100
1k
10 k
100 k
1M
Power-Supply Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
5.5
5.1 5.3
90
0
IOUT = 500 mA
IOUT = 150 mA
IOUT = 30 mA
80
70
60
50
40
30
20
10
VIN - VOUT = 1.5 V
0
10 M
10
100 k
Figure 11.
1M
10 M
SPECTRAL NOISE DENSITY vs FREQUENCY
f = 120 Hz
f = 10 kHz
f = 1 kHz
f = 100 kHz
50
f = 1 MHz
f = 10 MHz
20
10
Noise Spectral Density (mV/?Hz)
10
70
30
10 k
Figure 10.
f = 50 Hz
40
1k
Frequency (Hz)
80
60
100
Frequency (Hz)
PSRR vs OUTPUT CURRENT
90
Power-Supply Rejection Ratio (dB)
4.9
Figure 9.
90
1
0.1
0.01
VIN - VOUT = 1.5 V
0
0.001
0
100 200 300
400 500 600 700
Output Current (mA)
Figure 12.
6
4.7
4.5
Input Voltage (V)
Output Current (mA)
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800 900 1000
10
100
1k
10 k
100 k
1M
10 M
Frequency (Hz)
Figure 13.
Copyright © 2012, Texas Instruments Incorporated
TLV1171
www.ti.com
SBVS177 – APRIL 2012
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
500 mA
LOAD TRANSIENT RESPONSE
(200 mA to 500 mA, COUT = 10 μF)
VIN = 2.8 V
IOUT
200 mA
200 mA/div
200 mA/div
LOAD TRANSIENT RESPONSE
(200 mA to 500 mA, COUT = 1 μF)
500 mA
VIN = 2.8 V
IOUT
200 mA
50 mV/div
VOUT
50 ms/div
Figure 15.
LOAD TRANSIENT RESPONSE
(1 mA to 500 mA, COUT = 1 μF)
LOAD TRANSIENT RESPONSE
(1 mA to 500 mA, COUT = 10 μF)
VIN = 2.8 V
500 mA
IOUT
50 mV/div
1 mA
500 mA/div
50 ms/div
Figure 14.
VOUT
500 mA
IOUT
1 mA
VOUT
50 ms/div
Figure 16.
Figure 17.
LOAD TRANSIENT RESPONSE
(200 mA to 1 A, COUT = 1 μF)
LOAD TRANSIENT RESPONSE
(200 mA to 1 A, COUT = 10 μF)
1A
IOUT
200 mA
500 mA/div
50 ms/div
100 mV/div
100 mV/div
500 mA/div
50 mV/div
500 mA/div
50 mV/div
VOUT
VOUT
1A
IOUT
200 mA
VOUT
50 ms/div
50 ms/div
Figure 18.
Figure 19.
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
LOAD TRANSIENT RESPONSE
(1 mA to 1 A, COUT = 1 μF)
IOUT
100 mV/div
1 mA
VOUT
1A
500 mA/div
1A
IOUT
1 mA
VOUT
50 ms/div
Figure 21.
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 10 mA)
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 500 mA)
4.3 V
3.3 V
5 mV/div
VIN
1 V/div
50 ms/div
Figure 20.
VOUT
4.3 V
3.3 V
VIN
VOUT
200 ms/div
200 ms/div
Figure 22.
Figure 23.
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 1 A)
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 10 mA)
4.3 V
3.3 V
10 mV/div
VIN
1 V/div
500 mA/div
100 mV/div
1 V/div
5 mV/div
1 V/div
10 mV/div
8
LOAD TRANSIENT RESPONSE
(1 mA to 1 A, COUT = 10 μF)
VOUT
5.5 V
3.3 V
VIN
VOUT
200 ms/div
200 ms/div
Figure 24.
Figure 25.
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TLV1171
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SBVS177 – APRIL 2012
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VIN = VOUT(TYP) + 1.5 V; IOUT = 10 mA, and COUT = 1.0 μF, unless otherwise noted.
5.5 V
3.3 V
VIN
1 V/div
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 1 A)
10 mV/div
10 mV/div
1 V/div
LINE TRANSIENT RESPONSE
(VOUT = 1.8 V, IOUT = 500 mA)
VOUT
5.5 V
3.3 V
VIN
VOUT
200 ms/div
200 ms/div
Figure 26.
Figure 27.
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SBVS177 – APRIL 2012
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APPLICATION INFORMATION
The TLV1171 is a low quiescent current linear regulator designed for high-current applications. Unlike typical
high-current linear regulators, the TLV1171 consumes significantly less quiescent current. The device delivers
excellent line and load transient performance. The TLV1171 is low noise, and exhibits a very good power-supply
rejection ratio (PSRR). As a result, the device is ideal for high-current applications that require very sensitive
power-supply rails.
The TLV1171 regulator offers both current limit and thermal protection. The device operating junction
temperature range is –40°C to +125°C.
INPUT AND OUTPUT CAPACITOR REQUIREMENTS
For stability, 1.0-μF ceramic capacitors are required at the output. Higher-valued capacitors improve transient
performance. X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal
variation in value and equivalent series resistance (ESR) over temperature. Unlike traditional linear regulators
that need a minimum ESR for stability, the TLV1171 is ensured to be stable with no ESR. Therefore, costeffective ceramic capacitors can be used with this device. Effective output capacitance that takes bias,
temperature, and aging effects into consideration must be greater than 0.5 μF to ensure device stability.
Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to
1.0-μF, low-ESR capacitor across the IN and GND pins of the regulator. This capacitor counteracts reactive input
sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor may be
necessary if large, fast, rise-time load transients are anticipated, or if the device is not located physically close to
the power source. If source impedance is greater than 2 Ω, a 0.1-μF input capacitor may also be necessary to
ensure stability.
BOARD LAYOUT RECOMMENDATIONS TO IMPROVE PSRR AND NOISE PERFORMANCE
Input and output capacitors should be placed as close to the device pins as possible. To improve characteristic
ac performance such as PSRR, output noise, and transient response, it is recommended that the board be
designed with separate ground planes for VIN and VOUT, with the ground plane connected only at the GND pin of
the device. In addition, the output capacitor ground connection should be connected directly to the device GND
pin. Higher-value ESR capacitors may degrade PSRR performance.
INTERNAL CURRENT LIMIT
The TLV1171 internal current limit helps to protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of the output voltage. In such a case, the
output voltage is not regulated and can be calculated by Equation 1:
VOUT = ILIMIT ´ RLOAD
(1)
The PMOS pass transistor dissipates [(VIN – VOUT) × ILIMIT] until thermal shutdown is triggered and the device
turns off. As the device cools down, it is turned on by the internal thermal shutdown circuit. If the fault condition
continues, the device cycles between current limit and thermal shutdown. See the Thermal Information section
for more details.
The PMOS pass element in the TLV1171 has a built-in body diode that conducts current when the voltage at
OUT exceeds the voltage at IN. This current is not limited; if extended reverse voltage operation is anticipated,
external limiting to 5% of the rated output current is recommended.
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DROPOUT VOLTAGE
The TLV1171 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the
RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device
behaves like a resistor in dropout.
As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout.
TRANSIENT RESPONSE
As with any regulator, increasing the size of the output capacitor reduces over- and undershoot magnitude.
UNDERVOLTAGE LOCKOUT (UVLO)
The TLV1171 uses an undervoltage lockout circuit to keep the output shut off until the internal circuitry operates
properly.
THERMAL INFORMATION
Thermal protection disables the output when the junction temperature rises to approximately +165°C, thus
allowing the device to cool. When the junction temperature cools to approximately +145°C, the output circuitry is
again enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal
protection circuit may cycle on and off. This cycling limits dissipation of the regulator, protecting it from damage
as a result of overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, junction temperature should be limited to +125°C (max). To estimate the margin
of safety in a complete design (including heatsink), increase the ambient temperature until the thermal protection
is triggered; use worst-case loads and signal conditions.
The TLV1171 internal protection circuitry has been designed to protect against overload conditions. It is not
intended to replace proper heatsinking. Continuously running the TLV1171 into thermal shutdown degrades
device reliability.
POWER DISSIPATION
The ability to remove heat from the die is different for each package type and presents different considerations in
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves
heat from the device to ambient air. Performance data for JEDEC low and high-K boards are given in the
Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device.
The addition of plated through-holes to heat-dissipating layers also improves heatsink effectiveness.
Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of
the output current and voltage drop across the output pass element, as shown in Equation 2:
PD = (VIN - VOUT) IOUT
(2)
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV117112DCYR
ACTIVE
SOT-223
DCY
4
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
YX
TLV117112DCYT
ACTIVE
SOT-223
DCY
4
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
YX
TLV117115DCYR
ACTIVE
SOT-223
DCY
4
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
C9
TLV117115DCYT
ACTIVE
SOT-223
DCY
4
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
C9
TLV117118DCYR
ACTIVE
SOT-223
DCY
4
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
WF
TLV117118DCYT
ACTIVE
SOT-223
DCY
4
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
WF
TLV117125DCYR
ACTIVE
SOT-223
DCY
4
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
WE
TLV117125DCYT
ACTIVE
SOT-223
DCY
4
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
WE
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of