TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
D Qualified for Automotive Applications
D ESD Protection Exceeds 2000 V Per
D
D
D
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Output Swing Includes Both Supply Rails
Extended Common-Mode Input Voltage
Range . . . 0 V to 4.5 V (Min) with 5-V Single
Supply
No Phase Inversion
D Low Noise . . . 18 nV/√Hz Typ at f = 1 kHz
D Low Input Offset Voltage
950 μV Max at TA = 25°C (TLV243xA)
D Low Input Bias Current . . . 1 pA Typ
D Very Low Supply Current . . . 125 μA Per
D
D
Channel Max
600-Ω Output Drive
Macromodel Included
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
description
The TLV243x and TLV243xA are low-voltage
operational amplifier from Texas Instruments. The
common-mode input voltage range for each
device is extended over the typical CMOS
amplifiers making them suitable for a wide range
of applications. In addition, these devices do not
phase invert when the common-mode input is
driven to the supply rails. This satisfies most
design requirements without paying a premium
for rail-to-rail input performance. They also exhibit
rail-to-rail output performance for increased
dynamic range in single- or split-supply applications. This family is fully characterized at 3-V and
5-V supplies and is optimized for low-voltage
operation. The TLV243x only requires 100 μA
(typ) of supply current per channel, making it ideal
for battery-powered applications. The TLV243x
also has increased output drive over previous
rail-to-rail operational amplifiers and can drive
600-Ω loads for telecom applications.
VOH − High-Level Output Voltage − V
VOH
5
ÁÁ
ÁÁ
ÁÁ
VDD = 5 V
4
3
TA = 125°C
TA = 85°C
2
TA = 25°C
TA =−40°C
1
0
0
4
8
12
16
IOH − High-Level Output Current − mA
20
Figure 1
The other members in the TLV243x family are the high-power, TLV244x, and micro-power, TLV2422, versions.
The TLV243x, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels and
low-voltage operation, these devices work well in hand-held monitoring and remote-sensing applications. In
addition, the rail-to-rail output feature with single- or split-supplies makes this family a great choice when
interfacing with analog-to-digital converters (ADCs). For precision applications, the TLV243xA is available and
has a maximum input offset voltage of 950 μV.
If the design requires single operational amplifiers, see the TI TLV2211/21/31. This is a family of rail-to-rail output
operational amplifiers in the SOT-23 package. Their small size and low power consumption, make them ideal
for high density, battery-powered equipment.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2008 Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
ORDERING INFORMATION†
VIOmax
AT 25°C
TA
950 μV
V
−40°C
40°C to 125°C
2 5 mV
2.5
950 μV
V
−40°C
40°C to 125°C
2 5 mV
2.5
ORDERABLE
PART NUMBER
PACKAGE}
SOIC (D)
TOP-SIDE
MARKING
Tape and reel
TLV2432AQDRQ1
TSSOP (PW)
Tape and reel
TLV2432AQPWRQ1§
2432AQ
SOIC (D)
Tape and reel
TLV2432QDRQ1
TSSOP (PW)
Tape and reel
TLV2432QPWRQ1§
SOIC (D)
Tape and reel
TLV2434AQDRQ1
TSSOP (PW)
Tape and reel
TLV2434AQPWRQ1§
SOIC (D)
Tape and reel
TLV2434QDRQ1§
TSSOP (PW)
Tape and reel
TLV2434QPWRQ1§
2432Q1
2434AQ
†
For the most current package and ordering information, see the Package Option Addendum at the end of this document,
or see the TI web site at http://www.ti.com.
‡ Package drawings, thermal data, and symbolization are available at http://www.ti.com/packaging.
§ Product Preview.
TLV2432
D PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN +
VDD − /GND
2
1
8
2
7
3
6
4
5
TLV2434
D OR PW PACKAGE
TLV2432
PW PACKAGE
(TOP VIEW)
VDD +
2OUT
2IN −
2IN +
1OUT
1IN−
1IN +
VDD − / GND
1
2
3
4
POST OFFICE BOX 655303
8
7
6
5
(TOP VIEW)
VDD +
2OUT
2IN −
2IN +
• DALLAS, TEXAS 75265
1OUT
1IN −
1IN+
VDD+
2IN+
2IN −
2OUT
1
14
2
13
3
12
4
11
5
10
6
9
7
8
4OUT
4IN −
4IN+
VDD−/GND
3IN+
3IN −
3OUT
equivalent schematic (each amplifier)
Q22
Q29
Q31
Q34
Q36
VB3
Q26
Q24
Q32
VB2
VB1
VDD+
Q25
Q35
Q33
Q27
VB4
Q23
Q30
R3
Q3
IN−
Q6
Q4
R4
Q13
Q8
R7
Q15
Q10
Q18
Q20
IN+
Q7
Q9
VB3
R5
C2
R6
C3
VDD−/GND
C1
Q11
Q16
OUT
VB2
Q2
Q14
Q5
Q17
Q12
R1
Q21
R2
VB4
Q19
R8
69
5
26
6
3
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
Q1
R10
D1
R9
Transistors
Diodes
Resistors
Capacitors
Q37
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
COMPONENT
COUNT
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input current, II (each input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Total current into VDD + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Total current out of VDD − . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 50 mA
Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA: Q suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD − .
2. Differential voltages are at IN+ with respect to IN −. Excessive current flows if input is brought below VDD − − 0.3 V.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25
25°C
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70
70°C
C
POWER RATING
TA = 85
85°C
C
POWER RATING
TA = 125
125°C
C
POWER RATING
D (8)
D (14)
PW (8)
PW (14)
725 mW
1022 mW
525 mW
720 mW
5.8 mW/°C
7.6 mW/°C
4.2 mW/°C
5.6 mW/°C
464 mW
900 mW
336 mW
634 mW
377 mW
777 mW
273 mW
547 mW
145 mW
450 mW
105 mW
317 mW
recommended operating conditions
Supply voltage, VDD
MIN
MAX
2.7
10
V
V
Input voltage range, VI
VDD −
VDD + −0.8
Common-mode input voltage, VIC
VDD −
VDD + −0.8
Operating free-air temperature, TA
−40
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
125
UNIT
V
°C
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
VIO
αVIO
TEST CONDITIONS
VIC = 0,
0
VO = 0,
VDD ± = ± 1.5 V,
RS = 50 Ω
Input offset voltage
TLV243xA
IIO
Input offset current
IIB
Input bias current
0
VIC = 0,
VO = 0,
15V
VDD ± = ± 1.5
V,
RS = 50 Ω
AVD
MAX
300
2000
Full range
2500
25°C
300
Full range
|VIO| ≤ 5 mV
mV,
High-level
High
level output voltage
μV/°C
V/°C
25°C
0.003
μV/mo
25°C
0.5
150
1
Low-level
Low
level output voltage
Large-signal
Large
signal differential voltage amplification
Full range
IOL = 100 μA
VIC = 2.5 V,
VO = 1 V to 2 V
RL = 2 kه
ri(c)
Common-mode input resistance
ci(c)
Common-mode input capacitance
f = 10 kHz
zo
Closed-loop output impedance
f = 100 kHz,
Full range
0
to
2.2
RL = 1
Mه
AV = 10
pA
V
2.5
V
2.25
25°C
0.02
25°C
0.83
Full range
V
1
25°C
1.5
Full range
0.5
2.5
V/mV
25°C
750
25°C
1000
GΩ
25°C
1000
GΩ
25°C
8
pF
130
Ω
25°C
25°C
70
CMRR
Common mode rejection ratio
Common-mode
VIC = VICR MIN, VO = 1.5 V,
RS = 50 Ω
Full range
70
kSVR
Supply voltage rejection ratio (ΔVDD/ΔVIO)
Supply-voltage
VDD = 2.7 V to 8 V,
VIC = VDD /2,
No load
25°C
80
Full range
80
IDD
Supply current
5V
VO = 1
1.5
V,
No load
−0.25
to
2.75
pA
2.98
25°C
IOL = 3 mA
Differential input resistance
0
to
2.5
25°C
VIC = 1
1.5
5V
V,
ri(d)
300
25°C
RS = 50 Ω
IOH = − 3 mA
μV
V
2
25°C
Common mode input voltage range
Common-mode
950
UNIT
2000
Full range
VIC = 1.5 V,
VOL
25°C
TYP
Full range
IOH = − 100 μA
VOH
TLV243x-Q1
MIN
25 C
25°C
to 70°C
Temperature coefficient of input offset voltage
Input offset voltage long-term drift
(see Note 4)
VICR
TLV243x
TA†
25°C
Full range
83
dB
95
195
dB
250
260
μA
†
Full range is − 40°C to 125°C for Q level part.
Referenced to 2.5 V
NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
‡
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER
TEST CONDITIONS
RL = 2 kه,
VO = 1 V to 2 V,
CL = 100 pF‡
TA†
TLV243x-Q1,
TLV243xA-Q1
MIN
TYP
25°C
0.15
0.25
Full range
0.1
UNIT
MAX
SR
Slew rate at unity gain
Vn
Equivalent input noise voltage
VN(PP)
Peak to peak equivalent input noise
Peak-to-peak
voltage
In
Equivalent input noise current
THD + N
Total harmonic distortion plus noise
VO = 0.5 V to 2.5 V,
f = 1 kHz
kHz,
RL = 2 kه
AV = 1
Gain-bandwidth product
f = 10 kHz,
CL = 100 pF‡
RL = 2 kه,
25°C
0.5
MHz
Maximum output-swing bandwidth
VO(PP) = 1 V,
RL = 2 kه,
AV = 1,
CL = 100 pF‡
25°C
220
kHz
ts
Settling time
AV = − 1,
Step = 0.5 V to 2.5 V,
RL = 2 kه,
CL = 100 pF‡
φm
Phase margin at unity gain
BOM
Gain margin
†
‡
6
f = 10 Hz
25°C
120
f = 1 kHz
25°C
22
f = 0.1 Hz to 1 Hz
25°C
2.7
f = 0.1 Hz to 10 Hz
25°C
4
25°C
0.6
‡
RL = 2 kه,
AV = 10
0 1%
To 0.1%
• DALLAS, TEXAS 75265
μV
V
fA√Hz
0.5%
64
6.4
To 0.01%
0 01%
CL = 100 pF‡
nV/√Hz
0.065%
25°C
Full range is − 40°C to 125°C for Q level part.
Referenced to 2.5 V
POST OFFICE BOX 655303
25°C
V/ s
V/μs
μss
14 1
14.1
25°C
62°
25°C
11
dB
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
VIO
αVIO
TEST CONDITIONS
VIC = 0,
0
VO = 0,
VDD ± = ± 2.5 V,
RS = 50 Ω
Input offset voltage
TLV243xA
IIO
Input offset current
IIB
Input bias current
0
VIC = 0,
VO = 0,
25V
VDD ± = ± 2.5
V,
RS = 50 Ω
AVD
MAX
300
2000
Full range
2500
25°C
300
Full range
|VIO| ≤ 5 mV
mV,
High-level
High
level output voltage
μV/°C
V/°C
25°C
0.003
μV/mo
25°C
0.5
150
1
Low-level
Low
level output voltage
Large-signal
Large
signal differential voltage amplification
IOL = 100 μA
IOL = 5 mA
VIC = 2.5 V,
VO = 1 V to 4 V
RL = 2 kه
Differential input resistance
ri(c)
Common-mode input resistance
ci(c)
Common-mode input capacitance
f = 10 kHz
zo
Closed-loop output impedance
f = 100 kHz,
0
to
4.5
Full range
0
to
4.2
25°C
VIC = 2
2.5
5V
V,
ri(d)
300
25°C
RS = 50 Ω
IOH = − 5 mA
RL = 1
Mه
AV = 10
−0.25
to
4.75
pA
pA
V
4.97
25°C
4
Full range
4
4.35
25°C
0.01
25°C
0.8
Full range
V
V
1.25
25°C
2.5
Full range
0.5
3.8
V/mV
25°C
950
25°C
1000
GΩ
25°C
1000
GΩ
25°C
8
pF
130
Ω
25°C
25°C
70
CMRR
Common mode rejection ratio
Common-mode
VIC = VICR MIN, VO = 2.5 V,
RS = 50 Ω
Full range
70
kSVR
Supply voltage rejection ratio (ΔVDD/ΔVIO)
Supply-voltage
VDD = 4.4 V to 8 V,
VIC = VDD /2,
No load
25°C
80
Full range
80
IDD
Supply current
5V
VO = 2
2.5
V,
No load
μV
V
2
25°C
Common mode input voltage range
Common-mode
950
UNIT
2000
Full range
VIC = 2.5 V,
VOL
25°C
TYP
Full range
IOH = − 100 μA
VOH
TLV243x-Q1
MIN
25 C
25°C
to 70°C
Temperature coefficient of input offset voltage
Input offset voltage long-term drift
(see Note 4)
VICR
TLV243x
TA†
25°C
Full range
90
dB
95
200
dB
250
270
μA
†
Full range is − 40°C to 125°C for Q level part.
Referenced to 2.5 V
NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
‡
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER
TEST CONDITIONS
VO = 1.5 V to 3.5 V,
CL = 100 pF‡
RL = 2 kه,
TA†
TLV243x-Q1,
TLV243xA-Q1
MIN
TYP
25°C
0.15
0.25
Full range
01
0.1
UNIT
MAX
SR
Slew rate at unityy gain
g
Vn
Equivalent input noise voltage
VN(PP)
Peak to peak equivalent input noise
Peak-to-peak
voltage
In
Equivalent input noise current
THD + N
Total harmonic distortion plus noise
VO = 1.5 V to 3.5 V,
f = 1 kHz
kHz,
RL = 2 kه
AV = 1
Gain-bandwidth product
f = 10 kHz,
CL = 100 pF‡
RL =2 kه,
25°C
0.55
MHz
Maximum output-swing bandwidth
VO(PP) = 2 V,
RL = 2 kه,
AV = 1,
CL = 100 pF‡
25°C
100
kHz
ts
Settling time
AV = − 1,
Step = 1.5 V to 3.5 V,
RL = 2 kه,
CL = 100 pF‡
φm
Phase margin at unity gain
BOM
Gain margin
†
‡
8
f = 10 Hz
25°C
100
f = 1 kHz
25°C
18
f = 0.1 Hz to 1 Hz
25°C
1.9
f = 0.1 Hz to 10 Hz
25°C
2.8
25°C
0.6
‡
RL = 2 kه,
AV = 10
0 1%
To 0.1%
• DALLAS, TEXAS 75265
μV
V
fA√Hz
0.4%
64
6.4
To 0.01%
0 01%
CL = 100 pF‡
nV/√Hz
0.045%
25°C
Full range is − 40°C to 125°C for Q level part.
Referenced to 2.5 V
POST OFFICE BOX 655303
25°C
V/μs
/μ
μss
13 1
13.1
25°C
66°
25°C
11
dB
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
Input offset voltage
Distribution
vs Common-mode input voltage
2,3
4,5
αVIO
Temperature coefficient
Distribution
6,7
IIB/IIO
Input bias and input offset currents
vs Free-air temperature
VOH
High-level output voltage
vs High-level output current
9,11
VOL
Low-level output voltage
vs Low-level output current
10,12
VO(PP)
Maximum peak-to-peak output voltage
vs Frequency
13
IOS
Short circuit output current
Short-circuit
vs Supply voltage
vs Free-air temperature
14
15
VID
Differential input voltage
vs Output voltage
16,17
Differential gain
vs Load resistance
18
AVD
Large-signal differential voltage amplification
vs Frequency
19,20
AVD
Differential voltage amplification
vs Free-air temperature
21,22
zo
Output impedance
vs Frequency
23,24
CMRR
Common mode rejection ratio
Common-mode
vs Frequency
vs Free-air temperature
25
26
kSVR
Supply voltage rejection ratio
Supply-voltage
vs Frequency
vs Free-air temperature
27,28
29
IDD
Supply current
vs Supply voltage
30
SR
Slew rate
vs Load capacitance
vs Free-air temperature
31
32
VO
Inverting large-signal pulse response
33,34
VO
Voltage-follower large-signal pulse response
35,36
VO
Inverting small-signal pulse response
37,38
VO
Voltage-follower small-signal pulse response
39,40
Vn
Equivalent input noise voltage
vs Frequency
Noise voltage (referred to input)
Over a 10-second period
Total harmonic distortion plus noise
vs Frequency
Gain bandwidth product
Gain-bandwidth
Free-air
vs Free
air temperature
vs Supply voltage
Phase margin
vs Frequency
vs Load capacitance
19,20
48
Gain margin
vs Load capacitance
49
Unity-gain bandwidth
vs Load capacitance
50
THD + N
φm
B1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
8
41, 42
43
44,45
46
47
9
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2432
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLV2432
INPUT OFFSET VOLTAGE
35
30
Percentage of Amplifiers − %
30
Precentage of Amplifiers − %
35
408 Amplifiers From 1 Wafer Lot
VDD± = ± 1.5 V
TA = 25°C
25
20
15
10
5
408 Amplifiers From 1 Wafer Lot
VDD± = ± 2.5 V
TA = 25°C
25
20
15
10
5
0
−1600
−800
0
800
0
−1600
1600
VIO − Input Offset Voltage − μV
−800
0
800
VIO − Input Offset Voltage − μV
Figure 2
Figure 3
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
VVIO
IO − Input Offset Voltage − mV
1.5
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
2
VDD =3 V
TA = 25°C
1.5
VVIO
IO − Input Offset Voltage − mV
2
1
0.5
0
−0.5
ÁÁÁ
ÁÁÁ
ÁÁÁ
VDD = 5 V
TA = 25°C
1
0.5
0
−0.5
ÁÁ
ÁÁ
ÁÁ
−1
−1.5
−2
−0.5
−1
−1.5
2
2.5
0
0.5
1
1.5
VIC − Common-Mode Input Voltage − V
3
−2
−0.5 0
0.5
1
1.5
2
Figure 5
POST OFFICE BOX 655303
2.5
3
3.5
4
4.5
VIC − Common-Mode Input Voltage − V
Figure 4
10
1600
• DALLAS, TEXAS 75265
5
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2432 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
25
32 Amplifiers From 1 Wafer Lot
VDD = ± 1.5 V
TA = 25°C to 125°C
20
15
10
5
0
−4
0
1
2
3
−2
α
Temperature Coefficient − μV / °C
15
10
5
0
4
−3
VIO −
−1
32 Amplifiers From 1 Wafer Lot
VDD = ± 2.5 V
TA = 25°C to 125°C
20
Percentage of Amplifiers − %
Percentage of Amplifiers − %
25
DISTRIBUTION OF TLV2432 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
−4
−3
α
INPUT BIAS AND INPUT OFFSET CURRENTS
vs
FREE-AIR TEMPERATURE
35
2
1
3
4
VDD = 3 V
IIB
20
15
IIO
10
ÁÁ
ÁÁ
5
25
0
3
VDD± = ± 2.5 V
VIC = 0 V
VO = 0
RS = 50 Ω
25
0
−1
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
VOH − High-Level Output Voltage − V
VOH
IIO − Input Bias and Input Offset Currents − pA
IIIB
IB and IIO
ÁÁ
ÁÁ
−2
− Temperature Coefficient − μV / °C
Figure 7
Figure 6
30
VIO
45
65
85
105
TA − Free-Air Temperature − °C
125
2.5
TA = −40°C
2
TA = 125°C
TA = 25°C
1.5
1
TA = 0°C
0.5
0
0
Figure 8
3
6
9
12
IOH − High-Level Output Current − mA
15
Figure 9
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
11
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
1.4
5
ÁÁ
ÁÁ
ÁÁ
1.2
TA = 125°C
TA = 85°C
1
0.8
0.6
TA = 25°C
0.4
0
1
2
4
3
TA = 125°C
4
3
TA = 85°C
2
ÁÁ
ÁÁ
TA = −40°C
0.2
0
VDD = 5 V
VOH − High-Level Output Voltage − V
VOH
V
VOL
OL − Low-Level Output Voltage − V
VDD = 3 V
5
IOL − Low-Level Output Current − mA
TA = 25°C
TA =−40°C
1
0
0
4
8
12
16
IOH − High-Level Output Current − mA
Figure 10
Figure 11
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
VOL
VOL − Low-Level Output Voltage − V
VDD = 5 V
1
TA = 125°C
0.8
TA = 85°C
0.6
ÁÁÁ
ÁÁÁ
ÁÁÁ
TA = 25°C
TA = −40°C
0.2
0
0
1
2
3
4
IOL − Low-Level Output Current − mA
5
VO(PP)
VO(PP) − Maximum Peak-to-Peak Output Voltage − V
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
1.2
0.4
ÁÁ
ÁÁ
ÁÁ
5
RL = 2 kΩ
TA = 25°C
VDD = 5 V
4
3
VDD = 3 V
2
1
0
102
Figure 12
12
20
103
104
105
f − Frequency − Hz
Figure 13
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
106
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
20
VO = VDD/2
VIC = VDD/2
TA = 25°C
15
IIOS
OS − Short-Circuit Output Current − mA
I OS − Short-Circuit Output Current − mA
IOS
20
SHORT-CIRCUIT OUTPUT CURRENT
vs
FREE-AIR TEMPERATURE
10
5
0
−5
−10
−15
−20
2
3
4
5
6
7
8
9
VID = −100 mV
10
5
0
−5
−10
VID = 100 mV
−15
−20
−75
10
VDD − Supply Voltage − V
−50
−25
V ID − Differential Input Voltage − μ V
V ID − Differential Input Voltage − μ V
0
−250
−500
−750
0
0.5
75
100
125
1000
250
−1000
50
DIFFERENTIAL INPUT VOLTAGE
vs
OUTPUT VOLTAGE
VDD = 3 V
RL = 2 kΩ
VIC = 1.5 V
TA = 25°C
500
25
Figure 15
DIFFERENTIAL INPUT VOLTAGE
vs
OUTPUT VOLTAGE
750
0
TA − Free-Air Temperature − °C
Figure 14
1000
VDD = 5 V
VIC = 2.5 V
VO = 2.5 V
15
1
1.5
2
VO − Output Voltage − V
2.5
3
VDD = 5 V
VIC = 2.5 V
RL = 2 kΩ
TA = 25°C
750
500
250
0
−250
−500
−750
−1000
0
Figure 16
1
2
3
VO − Output Voltage − V
4
5
Figure 17
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
DIFFERENTIAL GAIN
vs
LOAD RESISTANCE
Differential Gain − V/ mV
103
VO(PP) = 2 V
TA = 25°C
VDD = 5 V
VDD = 3 V
102
101
1
101
102
RL − Load Resistance − kΩ
1
103
Figure 18
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
60
ÁÁ
ÁÁ
180°
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
TA = 25°C
135°
40
90°
20
45°
0
0°
−20
−40
104
−45°
105
106
f − Frequency − Hz
Figure 19
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
107
−90°
φom
m − Phase Margin
AVD
AVD − Large-Signal Differential
Voltage Amplification − dB
80
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
80
135°
40
90°
20
45°
0
0°
−20
φom
m − Phase Margin
60
AVD
AVD − Large-Signal Differential
Voltage Amplification − dB
ÁÁ
ÁÁ
ÁÁ
180°
VDD = 3 V
RL = 2 kΩ
CL = 100 pF
TA = 25°C
−45°
−40
104
105
106
107
−90°
f − Frequency − Hz
Figure 20
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
1000
A VD − Differential Voltage Amplification − V/mV
A VD − Differential Voltage Amplification − V/mV
10000
RL = 1 MΩ
1000
100
RL = 2 kΩ
10
1
0.1
−75
VDD = 5 V
VIC = 2.5 V
VO = 1 V to 4 V
−50
−25
0
25
50
75
100
125
VDD = 3 V
VIC = 2.5 V
VO = 0.5 V to 2.5 V
100
RL = 1 MΩ
10
1
RL = 2 kΩ
0.1
−75
−50
TA − Free-Air Temperature − °C
Figure 21
−25
0
25
50
75 100
TA − Free-Air Temperature − °C
125
Figure 22
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
OUTPUT IMPEDANCE
vs
FREQUENCY
1000
VDD = 3 V
TA = 25°C
VDD = 5 V
TA = 25°C
z o − Output Impedance − 0Ω
zo
z o − Output Impedance − 0
zo
Ω
1000
OUTPUT IMPEDANCE
vs
FREQUENCY
AV = 100
100
AV = 10
10
AV = 100
100
AV = 10
10
AV = 1
1
102
AV = 1
103
104
f − Frequency − Hz
1
102
105
103
104
f − Frequency − Hz
Figure 23
Figure 24
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
COMMON-MODE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
60
100
TA = 25°C
VDD = 5 V
VIC = 2.5 V
CMRR − Common-Mode Rejection Ratio − dB
CMRR − Common-Mode Rejection Ratio − dB
100
80
VDD = 3 V
VIC = 1.5 V
40
20
0
102
103
104
105
f − Frequency − Hz
106
VDD = 5 V
98
96
VDD = 3 V
94
92
90
−75
−50
−25
0
25
Figure 26
POST OFFICE BOX 655303
50
75
100
TA − Free-Air Temperature − °C
Figure 25
16
105
• DALLAS, TEXAS 75265
125
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
120
VDD = 3 V
TA = 25°C
KSVR
k SVR − Supply-Voltage Rejection Ratio − dB
KSVR
k SVR − Supply-Voltage Rejection Ratio − dB
120
100
80
60
40
ÁÁ
ÁÁ
ÁÁ
20
0
101
102
103
104
105
106
VDD = 5 V
TA = 25°C
100
80
60
40
ÁÁ
ÁÁ
ÁÁ
20
0
101
102
103
f − Frequency − Hz
Figure 27
105
106
Figure 28
SUPPLY VOLTAGE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
100
300
VO = VDD/2
No Load
96
92
VDD = 2.7 V to 8 V
VO = VDD/2
−50
−25
0
25
50
75
100
125
TA = − 40°C
200
TA = 85°C
150
ÁÁ
ÁÁ
ÁÁ
94
90
−75
TA = 25°C
250
98
IIDD
DD − Supply Current − μ A
kSVR
k SVR − Supply-Voltage Rejection Ratio − dB
104
f − Frequency − Hz
100
50
0
0
TA − Free-Air Temperature − °C
2
4
6
8
10
VDD − Supply Voltage − V
Figure 29
Figure 30
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
SLEW RATE
vs
LOAD CAPACITANCE
SLEW RATE
vs
FREE-AIR TEMPERATURE
0.6
SR −
0.5
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
AV = 1
0.3
SR +
0.4
SR − Slew Rate − V/ μ s
SR − Slew Rate − V/
v/us
μs
0.35
VDD = 3 V
AV = − 1
TA = 25°C
0.3
0.2
0.25
0.2
0.15
0.1
0
101
102
103
104
CL − Load Capacitance − pF
105
0.1
−75
−50
−25
Figure 31
VO
VO − Output Voltage − V
VO
VO − Output Voltage − V
75
100
125
5
VDD = 3 V
RL = 2 kΩ
CL = 100 pF
AV = − 1
TA = 25°C
2
1.5
1
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
4 A = −1
V
TA = 25°C
3
2
1
0.5
0
10
20
30
t − Time − μs
40
50
0
0
10
20
30
t − Time − μs
Figure 34
Figure 33
18
50
INVERTING LARGE-SIGNAL PULSE
RESPONSE
3
0
25
Figure 32
INVERTING LARGE-SIGNAL PULSE
RESPONSE
2.5
0
TA − Free-Air Temperature − °C
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
40
50
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
5
VDD = 3 V
RL = 2 kΩ
CL = 100 pF
2.5
AV = 1
TA = 25°C
2
1.5
1
3
2
1
0.5
0
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
AV = 1
TA = 25°C
4
VO
VO − Output Voltage − V
VO
VO − Output Voltage − V
3
0
10
20
30
t − Time − μs
40
0
50
0
5
10
INVERTING SMALL-SIGNAL PULSE
RESPONSE
50
4.5
5
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
AV = − 1
TA = 25°C
2.56
1.52
1.5
1.48
1.46
1.44
45
2.58
VO
VO − Output Voltage − V
V
VO
O − Output Voltage − V
1.54
40
INVERTING SMALL-SIGNAL
PULSE RESPONSE
VDD = 3 V
RL = 2 kΩ
CL = 100 pF
AV = −1
TA = 25°C
1.56
20 25 30 35
t − Time − μs
Figure 36
Figure 35
1.58
15
2.54
2.52
2.5
2.48
2.46
0
0.5
1
1.5
2 2.5 3
t − Time − μs
3.5
4
4.5
5
2.44
0
0.5
1
1.5
2 2.5 3 3.5
t − Time − μs
4
Figure 38
Figure 37
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
19
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
1.58
2.58
VDD = 3 V
RL = 2 kΩ
CL = 100 pF
AV = 1
TA = 25°C
1.54
1.52
1.5
1.48
1.46
1.44
VDD = 5 V
RL = 2 kΩ
CL = 100 pF
AV = 1
TA = 25°C
2.56
VO
VO − Output Voltage − V
1.56
VO
VO − Output Voltage − V
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
2.54
2.52
2.5
2.48
2.46
0
0.5
1
1.5
2 2.5 3
t − Time − μs
3.5
4
4.5
2.44
5
0
0.5
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
2 2.5 3 3.5
t − Time − μs
4
4.5
5
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
120
VDD = 3 V
RS = 20 Ω
TA = 25°C
100
V n − Equivalent Input Noise Voltage − nV/
VN
nv//HzHz
V n − Equivalent Input Noise Voltage − nV/
VN
nv//HzHz
120
80
60
40
20
102
103
f − Frequency − Hz
104
VDD = 5 V
RS = 20 Ω
TA = 25°C
100
80
60
40
20
0
101
Figure 41
20
1.5
Figure 40
Figure 39
0
101
1
103
102
f − Frequency − Hz
Figure 42
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
104
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
NOISE VOLTAGE OVER A 10-SECOND PERIOD
2000
1500
Noise Voltage − nV
1000
500
0
−500
−1000
VDD = 5 V
f = 0.1 Hz to 10 Hz
TA = 25°C
−1500
−2000
0
1
2
3
4
5
6
t − Time − s
7
8
9
10
Figure 43
10
RL = 2 kΩ Tied to 2.5 V
RL = 2 kΩ Tied to 0 V
AV = 10
1
VDD = 5 V
TA = 25°C
AV = 1
0.1
AV = 10
0.01
101
AV = 1
102
103
104
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
THD + N − Total Harmonic Distortion Plus Noise − %
THD + N − Total Harmonic Distortion Plus Noise − %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
105
f − Frequency − Hz
10
RL = 2 kΩ Tied to 1.5 V
RL = 2 kΩ Tied to 0 V
AV = 10
1
VDD = 3 V
TA = 25°C
AV = 1
0.1
AV = 10
0.01
101
Figure 44
AV = 1
102
103
f − Frequency − Hz
104
105
Figure 45
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
21
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
GAIN-BANDWIDTH PRODUCT
vs
FREE-AIR TEMPERATURE
800
750
RL = 2 kΩ
CL = 100 pF
700
f = 10 kHz
Gain-Bandwidth Product − kHz
Gain-Bandwidth Product − kHz
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
600
500
400
300
200
f = 10 kHz
RL = 2 kΩ
CL = 100 pF
TA = 25°C
700
650
600
550
100
0
−50
−25
75
100
0
25
50
TA − Free-Air Temperature − °C
500
125
0
1
2
Figure 46
Rnull = 500 Ω
Rnull = 1000 Ω
45°
Rnull = 1 kΩ
Rnull = 200 Ω
30°
Rnull = 0
8
Rnull = 200 Ω
Rnull = 100 Ω
102
103
104
CL − Load Capacitance − pF
105
Rnull = 0
TA = 25°C
RL = 2 kΩ
Rnull = 100 Ω
0
101
Figure 48
22
7
10
5
15°
0°
101
6
Rnull = 500 Ω
15
Gain Margin − dB
φom
m − Phase Margin
60°
5
GAIN MARGIN
vs
LOAD CAPACITANCE
20
TA = 25°C
RL = 2 kΩ
4
Figure 47
PHASE MARGIN
vs
LOAD CAPACITANCE
75°
3
VDD − Supply Voltage − V
102
103
104
CL − Load Capacitance − pF
Figure 49
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105
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
TYPICAL CHARACTERISTICS
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
B1 − Unity-Gain Bandwidth − kHz
600
TA = 25°C
RL = 2 kΩ
500
400
300
200
ÁÁ
ÁÁ
100
0
101
102
103
104
CL − Load Capacitance − pF
105
Figure 50
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23
TLV2432-Q1, TLV2432A-Q1, TLV2434-Q1, TLV2434A-Q1
Advanced LinCMOS™ RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE OPERATIONAL AMPLIFIERS
SGLS182B − SEPTEMBER 2003 − REVISED NOVEMBER 2010
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts™, the model generation software used
with Microsim PSpice™. The Boyle macromodel (see Note 5) and subcircuit in Figure 51 are generated using
the TLV243x typical electrical and operating characteristics at TA = 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
D
D
D
D
D
D
D
D
D
D
D
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Quiescent power dissipation
Input bias current
Open-loop voltage amplification
Unity-gain frequency
Common-mode rejection ratio
Phase margin
DC output resistance
AC output resistance
Short-circuit output current limit
NOTE 4: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal
of Solid-State Circuits, SC-9, 353 (1974).
99
3
VCC +
9
RSS
IN −
DP
IN +
1
11
C1
VCC −
6
−
VE
−
−
−
+
+
GCM
GA
VLIM
−
RO1
DE
5
+
.SUBCKT TLV2432 1 2 3 4 5
C1
11
12
3.560E−12
C2
6
7
15.00E−12
DC
5
53
DX
DE
54
5
DX
DLP
90
91
DX
DLN
92
90
DX
DP
4
3
DX
EGND
99
0
POLY (2) (3,0) (4,0) 0 .5 .5
FB
7
99
POLY (5) VB VC VE VLP
+ VLN 0 21.04E6 −30E6 30E6 30E6 −30E6
GA
6
0
11
12 47.12E−6
GCM
0
6
10
99 4.9E−9
ISS
3
10
DC 8.250E−6
HLIM
90
0
VLIM 1K
J1
11
2
10 JX
J2
12
1
10 JX
R2
6
9
100.0E3
OUT
RD1
60
11
21.22E3
RD2
60
12
21.22E3
R01
8
5
120
R02
7
99
120
RP
3
4
26.04E3
RSS
10
99
24.24E6
VAD
60
4
−.6
VB
9
0
DC 0
VC
3
53
DC .65
VE
54
4
DC .65
VLIM
7
8
DC 0
VLP
91
0
DC 1.4
VLN
0
92
DC 9.4
.MODEL DX D (IS=800.0E−18)
.MODEL JX PJF (IS=500.0E−15 BETA=281E−6
+ VTO= −.065)
.ENDS
Figure 51. Boyle Macromodel and Subcircuit
PSpice and Parts are trademarks of MicroSim Corporation.
24
+ DLP
91
+
VLP
7
RD2
54
4
C2
8
60
+
−
R2
−
53
DC
12
RD1
VAD
VC
J2
HLIM
−
+
90
RO2
VB
10
J1
92
FB
−
+
ISS
RP
2
DLN
EGND +
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VLN
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV2432AQDRQ1
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2432AQ
TLV2432QDRG4Q1
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2432Q1
TLV2434AQDRQ1
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2434AQ
TLV2434AQPWRQ1
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
2434AQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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