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TLV703
SBVS305 – MARCH 2017
TLV703 300-mA, Low-IQ, Low-Dropout Regulator
1 Features
3 Description
•
The TLV703 series of low-dropout (LDO) linear
regulators are low quiescent current devices with
excellent line and load transient performance. These
LDOs are designed for power-sensitive applications.
A precision band-gap and error amplifier provides
overall 2% accuracy. Low output noise, very high
power-supply rejection ratio (PSRR), and low-dropout
voltage make this series of devices ideal for a wide
selection of battery-operated handheld equipment. All
device versions have thermal shutdown and current
limit for safety.
1
•
•
•
•
•
•
•
Very Low Dropout:
– 37 mV at IOUT = 50 mA, VOUT = 2.8 V
– 75 mV at IOUT = 100 mA, VOUT = 2.8 V
– 220 mV at IOUT = 300 mA, VOUT = 2.8 V
2% Accuracy
Low IQ: 35 μA
Fixed-Output Voltage Combinations Possible
From 1.2 V to 4.8 V
High PSRR: 68 dB at 1 kHz
Stable With Effective Capacitance of 0.1 μF
Thermal Shutdown and Overcurrent Protection
Packages: 5-Pin SOT-23
2 Applications
•
•
•
•
•
•
Wireless Handsets
Smart Phones
ZigBee® Networks
Bluetooth® Devices
Li-Ion Battery-Operated Handheld Products
WLAN and Other PC Add-on Cards
Furthermore, these devices are stable with an
effective output capacitance of only 0.1 µF. This
feature enables the use of cost-effective capacitors
that have higher bias voltages and temperature
derating. The devices regulate to specified accuracy
with no output load.
The TLV703 series of LDO linear regulators are
available in a 5-pin SOT-23 package.
Device Information(1)
PART NUMBER
TLV703
PACKAGE
SOT-23 (5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
SPACE
SPACE
SPACE
SPACE
Typical Application Circuit
IN
OUT
TLV703
CIN
EN
COUT
GND
ON
OFF
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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SBVS305 – MARCH 2017
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
Power Supply Recommendations...................... 13
9.1 Power Dissipation ................................................... 13
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
10.3 Thermal Consideration.......................................... 14
11 Device and Documentation Support ................. 15
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Detailed Description ............................................ 10
7.1
7.2
7.3
7.4
8
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
8.1 Application Information............................................ 12
8.2 Typical Application .................................................. 12
10
10
10
11
Device Support ....................................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
15
15
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
Application and Implementation ........................ 12
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
March 2017
*
Initial release.
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
IN
1
GND
2
EN
3
5
OUT
4
NC
Not to scale
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
Input pin. A small, 1-µF ceramic capacitor is recommended from this pin to ground to assure stability and
good transient performance. See the Input and Output Capacitor Requirements in the Application
Information section for more details.
1
IN
I
2
GND
—
3
EN
I
4
NC
—
No connection. This pin can be tied to ground to improve thermal dissipation.
5
OUT
O
Regulated output voltage pin. A small, 1-µF ceramic capacitor is needed from this pin to ground to assure
stability. See the Input and Output Capacitor Requirements in the Application Information section for more
details.
Ground pin
Enable pin. Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into
shutdown mode and reduces operating current to 1 µA, nominal.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted) (1)
Voltage (2)
IN, EN, OUT
Current (source)
OUT
MIN
MAX
UNIT
–0.3
6
V
Internally limited
Output short-circuit duration
Indefinite
Total continuous power dissipation
Temperature
(1)
(2)
See Thermal Information
Operating virtual junction, TJ
–55
150
Storage, Tstg
–55
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
All voltages are with respect to the network ground terminal.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage range
VOUT
Output voltage range
IOUT
Output current
NOM
MAX
UNIT
2
5.5
1.2
4.8
V
V
0
300
mA
6.4 Thermal Information
TLV703
THERMAL METRIC
(1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
254.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
143.9
°C/W
RθJB
Junction-to-board thermal resistance
58.0
°C/W
ψJT
Junction-to-top characterization parameter
25.3
°C/W
ψJB
Junction-to-board characterization parameter
56.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at VIN = VOUT(nom) + 0.5 V or 2 V (whichever is greater), IOUT = 10 mA, VEN = 0.9 V, COUT = 1 μF, and TJ = –40°C to +125°C
(unless otherwise noted); typical values are at TJ = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
UNIT
Input voltage range
VOUT
DC output accuracy
–40°C ≤ TJ ≤ 125°C
0.5%
2%
ΔVOUT(ΔVIN)
Line regulation
VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V,
IOUT = 10 mA
1
5
mV
ΔVOUT(ΔIOUT)
Load regulation
0 mA ≤ IOUT ≤ 300 mA
1
15
mV
260
375
mV
500
860
mA
35
55
(1)
VDO
Dropout voltage
ICL
Output current limit
2
MAX
VIN
–2%
VIN = 0.98 × VOUT(nom), IOUT = 300 mA
VOUT = 0.9 × VOUT(nom)
320
IOUT = 0 mA
5.5
V
IGND
Ground pin current
ISHDN
Ground pin current (shutdown)
PSRR
Power-supply rejection ratio
VIN = 2.3 V, VOUT = 1.8 V,
IOUT = 10 mA, f = 1 kHz
68
dB
Vn
Output noise voltage
BW = 100 Hz to 100 kHz,
VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA
48
µVRMS
tSTR
Start-up time (2)
COUT = 1 µF, IOUT = 300 mA
VEN(high)
Enable pin high (enabled)
0.9
VIN
V
VEN(low)
Enable pin low (disabled)
0
0.4
V
IEN
Enable pin current
VIN = VEN = 5.5 V
0.04
µA
UVLO
Undervoltage lockout
VIN rising
1.9
V
Shutdown, temperature increasing
165
Reset, temperature decreasing
145
Tsd
Thermal shutdown temperature
TJ
Operating junction temperature
(1)
(2)
IOUT = 300 mA, VIN = VOUT + 0.5 V
370
VEN ≤ 0.4 V, VIN = 2 V
400
VEN ≤ 0.4 V, 2 V ≤ VIN ≤ 4.5 V,
TJ = –40°C to +85°C
1
µA
nA
2
µA
100
–40
µs
°C
125
°C
VDO is measured for devices with VOUT(nom) ≥ 2.35 V.
Start-up time = time from EN assertion to 0.98 × VOUT(nom).
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6.6 Typical Characteristics
1.90
1.90
1.88
1.88
1.86
1.86
1.84
1.84
1.82
1.82
VOUT (V)
VOUT (V)
over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater, IOUT = 10 mA,
VEN = VIN, COUT = 1 μF (unless otherwise noted); typical values are at TJ = 25°C
1.80
1.78
1.76
1.72
1.78
1.76
+125°C
+85°C
+25°C
-40°C
1.74
1.80
+125°C
+85°C
+25°C
-40°C
1.74
1.72
1.70
1.70
2.1
2.6
3.1
3.6
4.1
VIN (V)
4.6
5.1
5.6
2.3
VOUT = 1.8 V, IOUT = 10 mA
2.7
3.1
3.5
3.9
VIN (V)
4.3
4.7
5.5
5.1
VOUT = 1.8 V, IOUT = 300 mA
Figure 1. Line Regulation
Figure 2. Line Regulation
350
1.90
1.88
300
1.86
250
1.82
VDO (mV)
VOUT (V)
1.84
1.80
1.78
1.76
1.72
50
100
150
200
250
+125°C
+85°C
+25°C
–40°C
50
0
2.25
1.70
0
150
100
+125°C
+85°C
+25°C
-40°C
1.74
200
300
2.75
3.25
IOUT (mA)
VOUT = 1.8 V
Figure 4. Dropout Voltage vs Input Voltage
1.90
50
1.88
45
1.86
40
1.84
35
1.82
30
IGND (mA)
VOUT (V)
4.75
4.25
IOUT = 300 mA
Figure 3. Load Regulation
1.80
1.78
1.76
25
20
15
10mA
150mA
200mA
1.74
1.72
1.70
+125°C
+85°C
+25°C
-40°C
10
5
0
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
110 125
2.1
VOUT = 1.8 V
2.6
3.1
3.6
4.1
VIN (V)
4.6
5.1
5.6
VOUT = 1.8 V
Figure 5. Output Voltage vs Temperature
6
3.75
VIN (V)
Figure 6. Ground Pin Current vs Input Voltage
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Typical Characteristics (continued)
over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater, IOUT = 10 mA,
VEN = VIN, COUT = 1 μF (unless otherwise noted); typical values are at TJ = 25°C
450
50
400
45
350
40
35
IGND (mA)
IGND (mA)
300
250
200
150
50
25
20
15
+125°C
+85°C
+25°C
-40°C
100
30
10
5
0
0
0
50
100
150
IOUT (mA)
200
250
-40 -25 -10
300
5
20 35 50 65
Temperature (°C)
80
95
110 125
VOUT = 1.8 V
VOUT = 1.8 V
Figure 8. Ground Pin Current vs Temperature
Figure 7. Ground Pin Current vs Load
2.5
700
600
2
1.5
ILIM (mA)
ISHDN (mA)
500
1
300
200
+125°C
+85°C
+25°C
-40°C
0.5
400
+125°C
+85°C
+25°C
-40°C
100
0
0
2.1
2.6
3.1
3.6
4.1
VIN (V)
4.6
5.1
5.6
2.3
2.7
3.1
VOUT = 1.8 V
3.9
VIN (V)
4.3
4.7
5.5
5.1
VOUT = 1.8 V
Figure 9. Shutdown Current vs Input Voltage
Figure 10. Current Limit vs Input Voltage
100
80
90
70
80
60
PSRR (dB)
70
PSRR (dB)
3.5
60
50
40
30
50
40
30
20
20
IOUT = 10 mA
IOUT = 150 mA
10
0
1 kHz
10 kHz
100 kHz
10
0
10
100
1k
10 k
100 k
1M
10 M
2.1
Frequency (Hz)
2.2
2.3
2.4
2.5
2.6
2.7
2.8
Input Voltage (V)
VIN – VOUT = 0.5 V
VOUT = 1.8 V
Figure 11. Power-Supply Ripple Rejection vs Frequency
Figure 12. Power-Supply Ripple Rejection vs Input Voltage
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Typical Characteristics (continued)
10
100 mA/div
200 mA
1
IOUT
0 mA
0.1
50 mV/div
Output Spectral Noise Density (mV/ÖHz)
over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater, IOUT = 10 mA,
VEN = VIN, COUT = 1 μF (unless otherwise noted); typical values are at TJ = 25°C
0.01
VOUT
0.001
10
100
1k
10 k
100 k
1M
10 ms/div
10 M
VOUT = 1.8 V
Frequency (Hz)
VOUT = 1.8 V, IOUT = 10 mA, CIN = COUT = 1 µF
Figure 14. Load Transient Response
0 mA
IOUT
50 mA/div
10 mA
IOUT
VOUT
50 mA
0 mA
20 mV/div
5 mV/div
20 mA/div
Figure 13. Output Spectral Noise Density vs Frequency
VOUT
10 ms/div
10 ms/div
VOUT = 1.8 V, tR = tF = 1 µs
VOUT = 1.8 V, tR = tF = 1 µs
Figure 15. Load Transient Response
Figure 16. Load Transient Response
2.9 V
1 V/div
IOUT
0 mA
VIN
2.3 V
VOUT
5 mV/div
100 mV/div
200 mA/div
300 mA
VOUT
10 ms/div
1 ms/div
VOUT = 1.8 V, IOUT = 300 mA, slew rate = 1 V/µs
VOUT = 1.8 V, tR = tF = 1 µs
Figure 17. Load Transient Response
8
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Figure 18. Line Transient Response
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Typical Characteristics (continued)
VIN
2.9 V
5.5 V
1 V/div
1 V/div
over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater, IOUT = 10 mA,
VEN = VIN, COUT = 1 μF (unless otherwise noted); typical values are at TJ = 25°C
2.3 V
VIN
10 mV/div
5 mV/div
2.1 V
VOUT
VOUT
1 ms/div
1 ms/div
VOUT = 1.8 V, IOUT = 1 mA, slew rate = 1 V/µs
VOUT = 1.8 V, IOUT = 300 mA, slew rate = 1 V/µs
Figure 19. Line Transient Response
Figure 20. Line Transient Response
VIN
1 V/div
VOUT = 1.8 V
IOUT = 1 mA
VOUT
200 ms/div
VOUT = 1.8 V, IOUT = 1 mA
Figure 21. VIN Ramp Up, Ramp Down Response
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7 Detailed Description
7.1 Overview
The TLV703 series of low-dropout (LDO) linear regulators are low quiescent current devices with excellent line
and load transient performance. These LDOs are designed for power-sensitive applications. A precision bandgap and error amplifier provides overall 2% accuracy. Low output noise, very high power-supply rejection ratio
(PSRR), and low dropout voltage make this series of devices ideal for most battery-operated handheld
equipment. All device versions have integrated thermal shutdown, current limit, and undervoltage lockout
(UVLO).
7.2 Functional Block Diagram
OUT
IN
Current
Limit
R1
±
+
Thermal
Shutdown
UVLO
R2
Bandgap
EN
GND
Logic
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7.3 Feature Description
7.3.1 Internal Current Limit
The TLV703 internal current limit helps protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of the output voltage. In such a case, the
output voltage is not regulated, and is VOUT = ICL × RLOAD. The PMOS pass transistor dissipates (VIN – VOUT) ×
ICL until thermal shutdown is triggered and the device turns off. As the device cools, the internal thermal
shutdown circuit turns the device back on. If the fault condition continues, the device cycles between current limit
and thermal shutdown; see the Thermal Consideration section for more details.
The PMOS pass element in the TLV703 has a built-in body diode that conducts current when the voltage at OUT
exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is anticipated,
external limiting to 5% of the rated output current is recommended.
7.3.2 Shutdown
The enable pin (EN) is active high. The device is enabled when voltage at the EN pin goes above 0.9 V. The
device is turned off when the EN pin is held at less than 0.4 V. When shutdown capability is not required, EN can
be connected to the IN pin.
10
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Feature Description (continued)
7.3.3 Dropout Voltage
The TLV703 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear (triode) region of operation and the input-to-output
resistance is the RDS(on) of the PMOS pass element. VDO scales approximately with output current because the
PMOS device functions as a resistor in dropout.
As with any linear regulator, PSRR and transient response are degraded when (VIN – VOUT) approaches dropout.
Figure 12 illustrates this effect.
7.3.4 Undervoltage Lockout (UVLO)
The TLV703 uses a UVLO circuit to keep the output shut off until internal circuitry is operating properly.
7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
•
•
•
The input voltage is greater than the nominal output voltage added to the dropout voltage
The output current is less than the current limit
The input voltage is greater than the UVLO voltage
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is the same as the input voltage minus the dropout voltage. The transient performance of the device is
significantly degraded because the pass device is in a triode state and no longer regulates the output voltage of
the LDO. Line or load transients in dropout can result in large output voltage deviations.
Table 1 lists the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
OPERATING MODE
PARAMETER
VIN
IOUT
Normal mode
VIN > VOUT (nom) + VDO
IOUT < ICL
Dropout mode
VIN < VOUT (nom) + VDO
IOUT < ICL
Current limit
VIN > UVLO
IOUT > ICL
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TLV703 belongs to a family of next-generation value LDO regulators. These devices consume low quiescent
current and deliver excellent line and load transient performance. These characteristics, combined with low noise
and very good PSRR with little (VIN – VOUT) headroom, make this family of devices ideal for portable RF
applications. This family of regulators offers current limit and thermal protection, and is specified from –40°C to
+125°C.
8.2 Typical Application
IN
OUT
TLV703
CIN
EN
COUT
GND
ON
OFF
Figure 22. Typical Application Circuit
8.2.1 Design Requirements
Table 2 lists the design parameters.
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
2.5 V to 3.3 V
Output voltage
1.8 V
Output current
100 mA
8.2.2 Detailed Design Procedure
8.2.2.1 Input and Output Capacitor Requirements
1-μF X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal variation
in value and equivalent series resistance (ESR) over temperature.
However, the TLV703 is designed to be stable with an effective capacitance of 0.1 μF or larger at the output.
Thus, the device is stable with capacitors of other dielectric types as well, as long as the effective capacitance
under operating bias voltage and temperature is greater than 0.1 µF. In addition to allowing the use of lower-cost
dielectrics, this capability of being stable with 0.1-µF effective capacitance also enables the use of smaller
footprint capacitors that have higher derating in size- and space-constrained applications.
Using a 0.1-µF rated capacitor at the output of the LDO does not ensure stability because the effective
capacitance under the specified operating conditions must not be less than 0.1 µF. Maximum ESR must be less
than 200 mΩ.
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Although an input capacitor is not required for stability, good analog design practice is to connect a 0.1-µF to
1-µF, low ESR capacitor across the IN pin and GND pin of the regulator. This capacitor counteracts reactive
input sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor
may be necessary if large, fast rise-time load transients are anticipated, or if the device is not located close to the
power source. If source impedance is more than 2 Ω, a 0.1-μF input capacitor may be necessary to ensure
stability.
8.2.2.2 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude
but increases the duration of the transient response.
1 V/div
IOUT
50 mA
VIN
2.9 V
2.3 V
0 mA
5 mV/div
20 mV/div
50 mA/div
8.2.3 Application Curves
VOUT
VOUT
10 ms/div
1 ms/div
VOUT = 1.8 V, tR = tF = 1 µs
VOUT = 1.8 V, IOUT = 1 mA, slew rate = 1 V/µs
Figure 23. Load Transient Response
Figure 24. Line Transient Response
9 Power Supply Recommendations
Connect a low output impedance power supply directly to the IN pin of the TLV703. Inductive impedances
between the input supply and the IN pin can create significant voltage excursions at the IN pin during start-up or
load transient events.
9.1 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed-circuit-board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to the ambient air; see the Thermal Information section for thermal performance on the
TLV703 evaluation module (EVM). The EVM is a two-layer board with two ounces of copper per side.
Power dissipation depends on input voltage and load conditions. Equation 1 shows that power dissipation (PD) is
equal to the product of the output current and the voltage drop across the output pass element.
PD = (VIN - VOUT) ´ IOUT
(1)
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10 Layout
10.1 Layout Guidelines
Place input and output capacitors as close to the device pins as possible. To improve ac performance (such as
PSRR, output noise, and transient response), TI recommends designing the board with separate ground planes
for VIN and VOUT with the ground plane connected only at the GND pin of the device. In addition, connect the
ground connection for the output capacitor directly to the GND pin of the device. High ESR capacitors can
degrade PSRR performance.
10.2 Layout Example
VOUT
VIN
IN
CIN
OUT
COUT
GND
EN
NC
GND PLANE
Represents via used for
application specific connections
Figure 25. Example Layout
10.3 Thermal Consideration
Thermal protection disables the output when the junction temperature rises to approximately 165°C, allowing the
device to cool. When the junction temperature cools to approximately 145°C, the output circuitry is again
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit can cycle on and off. This cycling limits the dissipation of the regulator, thus protecting the regulator from
damage resulting from overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, limit junction temperature to 125°C maximum.
To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature
until the thermal protection is triggered; use worst-case loads and signal conditions.
The internal protection circuitry of the TLV703 is designed to protect against overload conditions. This circuitry is
not intended to replace proper heatsinking. Continuously running the TLV703 into thermal shutdown degrades
device reliability.
14
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.2 Device Nomenclature
Table 3. Ordering Information (1)
PRODUCT
TLV703xx yyyz
(1)
(2)
VOUT
(2)
XX is nominal output voltage (for example, 28 = 2.8 V).
YYY is the package designator.
Z is tape and reel quantity (R = 3000).
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
Output voltages from 1.2 V to 4.8 V in 50-mV increments are available. Contact factory for details and availability.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
Using the TLV700xxEVM-503 Evaluation Module
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of the ZigBee Alliance.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV70310DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1F4Q
TLV70311DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1F1Q
TLV70312DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1ECQ
TLV70313DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1G5Q
TLV70315DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1EDQ
TLV70318DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1AZE
TLV70325DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1EEQ
TLV70327DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1EXQ
TLV70328DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1B3E
TLV70329DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1EZQ
TLV70330DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1I9Q
TLV70333DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
1AHQ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of