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TLV809L30DBZR

TLV809L30DBZR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT-23

  • 描述:

    电源监控器(PMIC) 1 CHANNEL SOT23-3

  • 数据手册
  • 价格&库存
TLV809L30DBZR 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 TLV809 3-Pin Supply Voltage Supervisor 1 Features 3 Description • The TLV809 family of supervisory circuits provides circuit initialization and timing supervision, primarily for digital signal processors (DSPs) and processorbased systems. 1 • • • • • Precision Supply Voltage Monitor: 2.5 V, 3 V, 3.3 V, 5 V Power-On Reset Generator with a Fixed Delay Time of 200 ms Supply Current: 9 µA (Typical) Temperature Range: –40°C to +85°C 3-Pin SOT-23 Package Pin-for-Pin Compatible with the MAX809 2 Applications • • • • • • • • DSPs, Microcontrollers, and Microprocessors Wireless Communication Systems Portable and Battery-Powered Equipment Programmable Controls Intelligent Instruments Industrial Equipment Notebook and Desktop Computers Automotive Systems During power-on, RESET is asserted when the supply voltage (VDD) becomes greater than 1.1 V. Thereafter, the supervisory circuit monitors VDD and keeps RESET active as long as VDD remains below the threshold voltage, VIT. An internal timer delays the return of the output to the inactive state (high) to ensure proper system reset. The delay time (td(typ) = 200 ms) starts after VDD rises above the threshold voltage, VIT. When the supply voltage drops below the VIT threshold voltage, the output becomes active (low) again. No external components are required. All devices in this family have a fixed sense-threshold voltage (VIT) set by an internal voltage divider. The TLV803 has an active-low, push-pull RESET output. See the TLV803 for an open-drain RESET output and the TLV810 for a push-pull, active-high RESET output. This product family is designed for supply voltages of 2.5 V, 3 V, 3.3 V, and 5 V. The circuits are available in a 3-pin SOT-23 package. The TLV809 devices are characterized for operation over a temperature range of –40°C to +85°C. Device Information(1) PART NUMBER Typical Application TLV809 3.3-V LDO OUT IN BODY SIZE (NOM) 2.90 mm × 1.60 mm SOT-23 (3), DBZ 2.92 mm × 1.30 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 3.3 V 5V PACKAGE SOT-23 (3), DBV GND VDD VDD DSP, FPGA, ASIC TLV809K33 RESET RESET GND GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Voltage Options ..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 3 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 3 4 4 4 4 5 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Switching Characteristics .......................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 8.1 Overview ................................................................... 7 8.2 Functional Block Diagram ......................................... 7 8.3 Feature Description................................................... 7 8.4 Device Functional Modes.......................................... 7 9 Application and Implementation .......................... 8 9.1 Application Information.............................................. 8 9.2 Typical Application .................................................... 9 10 Power Supply Recommendations ..................... 10 11 Layout................................................................... 10 11.1 Layout Guidelines ................................................. 10 11.2 Layout Example .................................................... 10 12 Device and Documentation Support ................. 11 12.1 12.2 12.3 12.4 12.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 11 11 11 11 11 13 Mechanical, Packaging, and Orderable Information ........................................................... 11 4 Revision History Changes from Revision C (February 2012) to Revision D Page • Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, Overview section, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ...................................................................................................................... 1 • Deleted pinout drawing from page 1 ..................................................................................................................................... 1 • Changed Description section: added third paragraph and changed section wording for clarity ............................................ 1 • Changed Voltage Options table: changed title, deleted duplicated data already in POA ..................................................... 3 • Deleted soldering temperature parameter from Absolute Maximum Ratings table ............................................................... 3 • Changed IDD parameter test conditions in Electrical Characteristics table ............................................................................ 4 Changes from Revision B (September 2010) to Revision C Page • Changed TLV809L30 DBZ ordering information column in Package/Ordering Information table.......................................... 3 • Changed TLV809K33 DBZ ordering information column in Package/Ordering Information table ......................................... 3 • Changed first TLV809I50 DBZ ordering information entry in Package/Ordering Information table ....................................... 3 Changes from Revision A (July 2010) to Revision B Page • Updated document format to current standards..................................................................................................................... 1 • Added DBZ package to pinout figure ..................................................................................................................................... 1 • Added DBZ package to Package/Ordering Information table ................................................................................................ 3 • Added Thermal Information table ........................................................................................................................................... 3 • Changed Figure 3................................................................................................................................................................... 6 2 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 TLV809 www.ti.com SLVSA03D – JUNE 2010 – REVISED MARCH 2016 5 Voltage Options PRODUCT THRESHOLD VOLTAGE TLV809J25 2.25 V TLV809L30 2.64 V TLV809K33 2.93 V TLV809I50 4.55 V 6 Pin Configuration and Functions DBV, DBZ Packages 3-Pin SOT-23 Top View GND 1 3 RESET VDD 2 Pin Functions PIN NO. NAME I/O DESCRIPTION 1 GND — Ground pin. This pin must be connected to ground with a low-impedance connection. 2 RESET O RESET pin. RESET is an active low signal, asserting when VDD is below the threshold voltage. When VDD rises above VIT, there is a delay time (td) until RESET deasserts. RESET is a push-pull output stage. 3 VDD I Supply voltage pin. A 0.1-µF ceramic capacitor from this pin to ground is recommended to improve stability of the threshold voltage. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN VDD Supply voltage (2) MAX 7 All other pins (2) –0.3 7 UNIT V IOL Maximum low output current 5 mA IOH Maximum high output current –5 mA IIK Input clamp current (VI < 0 or VI > VDD) ±20 mA IOK Output clamp current (VO < 0 or VO > VDD) ±20 mA TA Operating free-air temperature –40 85 °C Tstg Storage temperature –65 150 °C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to GND. For reliable operation, do not operate the device at 7 V for more than t = 1000h continuously. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 3 TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 www.ti.com 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions at specified temperature range (unless otherwise noted) MIN VDD Supply voltage CIN VDD bypass capacitor TA Operating free-air temperature range NOM MAX 2 UNIT 6 V 0.1 µF –40 85 °C 7.4 Thermal Information TLV809 THERMAL METRIC (1) DBV (SOT-23) DBZ (SOT-23) UNIT 3 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 242.1 286.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 213.0 105.6 °C/W RθJB Junction-to-board thermal resistance 123.4 124.4 °C/W ψJT Junction-to-top characterization parameter 45.7 25.8 °C/W ψJB Junction-to-board characterization parameter 130.9 107.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics at TA = –40°C to +85°C (unless otherwise noted); typical values are at TA = 25°C PARAMETER VOH VOL TEST CONDITIONS High-level output voltage Low-level output voltage Power-up reset voltage (1) MIN VDD = 2.5 V to 6 V, IOH = –500 µA VDD – 0.2 VDD = 3.3 V, IOH = –2 mA VDD – 0.4 VDD = 6 V, IOH = –4 mA VDD – 0.4 Negative-going input threshold voltage (2) 0.2 VDD = 3.3 V, IOH = 2 mA 0.4 VDD = 6 V, IOH = 4 mA 0.4 0.2 TLV809K33 TA = –40°C to +85°C TLV809I50 Vhys Hysteresis 2.20 2.25 2.30 2.58 2.64 2.70 2.87 2.93 2.99 4.45 4.55 4.65 TLV809J25 30 TLV809L30 35 TLV809K33 40 TLV809I50 IDD Supply current CI Input capacitance (1) (2) 4 UNIT V VDD ≥ 1.1 V, IOL = 50 µA TLV809L30 MAX VDD = 2 V to 6 V, IOH = 500 µA TLV809J25 VIT– TYP V V V mV 60 VDD = 2 V, RESET is unconnected 9 12 VDD = 6 V, RESET is unconnected 20 25 VI = 0 V to VDD 5 µA pF The lowest supply voltage at which RESET becomes active. tr, VDD ≥ 15 ms/V. To ensure best stability of the threshold voltage, place a bypass capacitor ( 0.1-µF ceramic) near the supply pins. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 TLV809 www.ti.com SLVSA03D – JUNE 2010 – REVISED MARCH 2016 7.6 Timing Requirements at TA = 25°C, RL = 1 MΩ, and CL = 50 pF MIN tw Pulse duration at VDD VDD = VIT– + 0.2 V, VDD = VIT– – 0.2 V NOM MAX 3 UNIT µs 7.7 Switching Characteristics at TA = 25°C, RL = 1 MΩ, and CL = 50 pF PARAMETER td Delay time tPHL Propagation (delay) time, high-to-low-level output VDD to RESET delay TEST CONDITIONS MIN TYP MAX VDD ≥ VIT– + 0.2 V; see Figure 1 120 200 VIL = VIT– – 0.2 V, VIH = VIT– + 0.2 V 280 1 UNIT ms µs VDD V(NOM) VIT 1.1 V t RESET 1 0 t td td For VDD < 1.1 V Undefined Behavior of RESET Output Figure 1. Timing Diagram Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 5 TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 www.ti.com 7.8 Typical Characteristics 2.75 20 VDD = 2.5 V +85°C 2.25 2.00 ICC - Supply Current - mA VOL − Low-Level Output Voltage − V 2.50 TA = 25°C 1.75 1.50 TA = 85°C 1.25 TA = 0°C 1.00 0.75 TA =−40°C 0.50 15 +25°C 10 0°C 5 +40°C 0.25 0.00 0.0 2.5 5.0 7.5 10.0 0 12.5 1 0 2 3 4 VCC - Supply Voltage - V IOL − Low-Level Output Current − mA 5.5 5.0 4.5 TA =−40°C 4.0 3.5 TA = 0°C 3.0 2.5 TA = 85°C 2.0 1.5 1.0 2.50 TA = 25°C 2.25 2.00 1.50 1.00 TA = 85°C 0.75 0.50 TA = 25°C 0.25 0.00 0 −10 −20 −30 −40 −50 0 −2 −4 −6 −8 −10 IOH − High-Level Output Current − mA IOH − High-Level Output Current − mA Figure 4. High-Level Output Voltage vs High-Level Output Current Figure 5. High-Level Output Voltage vs High-Level Output Current 3.5 1.001 VDD = 2.3 V t w − Minimum Pulse Duration at V DD − µ s V IT (T A ), V IT (25 ° C) TA = 0°C 1.25 0.0 Normalized Threshold Voltage TA =−40°C 1.75 0.5 1.000 0.999 0.998 0.997 0.996 0.995 −40 −20 0 20 40 60 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 85 TA − Free-Air Temperature − °C 0.2 0.4 0.6 0.8 1.0 VDD − Threshold Overdrive Voltage − V Figure 6. Normalized Input Threshold Voltage vs Free-Air Temperature at VDD 6 VDD = 2.5 V 2.75 VOH − High-Level Output Voltage − V VOH − High-Level Output Voltage − V 3.00 VDD = 6 V 6.0 6 Figure 3. Supply Current vs Supply Voltage Figure 2. Low-Level Output Voltage vs Low-Level Output Current 6.5 5 Figure 7. Minimum Pulse Duration at VDD vs VDD Threshold Overdrive Voltage Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 TLV809 www.ti.com SLVSA03D – JUNE 2010 – REVISED MARCH 2016 8 Detailed Description 8.1 Overview The TLV809 is a 3-pin voltage detector with fixed detection thresholds, an active-low push-pull RESET output, and an internal timer to delay the RESET signal when VDD rises above the threshold voltage. 8.2 Functional Block Diagram TLV809 R1 _ VDD Reset Logic + Timer RESET + R2 GND Oscillator Reference Voltage of 1.137 V 8.3 Feature Description 8.3.1 Supply Voltage Monitoring The device actively monitors its supply voltage to ensure that the power supply is above a certain voltage threshold. The device offers various fixed threshold options that are approximately 10% below several standard supply voltages (2.5 V, 3.0 V, 3.3 V, 5.0 V). 8.3.2 RESET Output The device has a RESET output to indicate the status of the input power supply. RESET is an active low signal, asserting when VDD is below the threshold voltage. When VDD rises above VIT, there is a delay time (td) until RESET deasserts. RESET is a push-pull output stage. 8.4 Device Functional Modes When the input supply voltage is in its recommended operating range (2 V to 6 V), the device is in a normal operational mode. In normal operational mode the device monitors VDD for undervoltage detection. When the input supply is below its recommended operating range, the device is in shutdown mode and therefore tries to assert RESET. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 7 TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information 9.1.1 VDD Transient Rejection The device has built-in rejection of fast transients on the VDD pin. The rejection of transients depends on both the duration and the amplitude of the transient. The amplitude of the transient is measured from the bottom of the transient to the negative threshold voltage of the device, as shown in Figure 8. VDD VITTransient Amplitude tw Duration Figure 8. Voltage Transient Measurement The device does not respond to transients that are fast duration and low amplitude or long duration and small amplitude. Figure 7 illustrates the relationship between the transient amplitude and duration needed to trigger a reset. Any combination of duration and amplitude above the curve generates a reset signal. 9.1.2 Reset During Power-Up and Power-Down The device output is valid when VDD is greater than 1.1 V. When VDD is less than 1.1 V, the output transistor turns off and becomes high impedance. The voltage on the RESET pin rises to the voltage level connected to the pullup resistor. Figure 9 shows a typical waveform for power-up. VIT- + VHYS VDD 1.1 V td RESET Valid Output Figure 9. Power-Up Response 8 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 TLV809 www.ti.com SLVSA03D – JUNE 2010 – REVISED MARCH 2016 9.2 Typical Application 3.3-V LDO 3.3 V 5V OUT IN GND VDD VDD DSP, FPGA, ASIC TLV809K33 RESET RESET GND GND Figure 10. Monitoring a 3.3-V Supply 9.2.1 Design Requirements The device must ensure that the supply voltage does not drop more than 15% below 3.3 V. If the supply voltage falls below 3.3 V – 15%, then the load must be disabled. 9.2.2 Detailed Design Procedure The TLV809K33 is selected to ensure that VDD is greater than 2.87 V when the load is enabled. 9.2.3 Application Curve t w − Minimum Pulse Duration at V DD − µ s 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VDD − Threshold Overdrive Voltage − V Figure 11. Minimum Pulse Duration at VDD vs VDD Threshold Overdrive Voltage Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 9 TLV809 SLVSA03D – JUNE 2010 – REVISED MARCH 2016 www.ti.com 10 Power Supply Recommendations Power the device with a low-impedance supply. A 0.1-µF bypass capacitor from VDD to ground is recommended. 11 Layout 11.1 Layout Guidelines Place the device near the load for the input power supply, with a low-impedance connection to the power supply pins of the load to sense the supply voltage. 11.2 Layout Example VDD CIN RESET TLV809 GND Plane Figure 12. Example Layout 10 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 TLV809 www.ti.com SLVSA03D – JUNE 2010 – REVISED MARCH 2016 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation TLV803 Data Sheet, SBVS157 TLV810 Data Sheet, SBVS158 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Product Folder Links: TLV809 11 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TLV809I50DBVR ACTIVE SOT-23 DBV 3 3000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTBI TLV809I50DBVT ACTIVE SOT-23 DBV 3 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTBI TLV809I50DBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMV TLV809I50DBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMV TLV809J25DBVR ACTIVE SOT-23 DBV 3 3000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTCI TLV809J25DBVT ACTIVE SOT-23 DBV 3 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTCI TLV809J25DBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMT TLV809J25DBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMT TLV809K33DBVR ACTIVE SOT-23 DBV 3 3000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTRI TLV809K33DBVT ACTIVE SOT-23 DBV 3 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTRI TLV809K33DBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMX TLV809K33DBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMX TLV809L30DBVR ACTIVE SOT-23 DBV 3 3000 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTXI TLV809L30DBVT ACTIVE SOT-23 DBV 3 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 85 VTXI TLV809L30DBZR ACTIVE SOT-23 DBZ 3 3000 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMZ TLV809L30DBZT ACTIVE SOT-23 DBZ 3 250 Green (RoHS & no Sb/Br) NIPDAUAG Level-1-260C-UNLIM -40 to 85 BCMZ (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TLV809L30DBZR 价格&库存

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TLV809L30DBZR
  •  国内价格
  • 1+2.47320
  • 10+2.40840
  • 30+2.37600
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库存:97

TLV809L30DBZR
    •  国内价格
    • 1000+1.32000

    库存:376857