TPA152D

TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 D D D D D D D D D PACKAGE (TOP VIEW) High-Fidelity Line-Out/HP Driver 75-mW Stereo Output PC Power Supply Compatible Pop Reduction Circuitry Internal Mid-Rail Generation Thermal and Short-Circuit Protection Surface-Mount Packaging Pin Compatible With TPA302 VO 1 MUTE BYPASS IN2– 1 8 2 7 3 6 4 5 IN1– GND VDD VO 2 description The TPA152 is a stereo audio power amplifier capable of less than 0.1% THD+N at 1 kHz when delivering 75 mW per channel into a 32-Ω load. THD+N is less than 0.2% across the audio band of 20 to 20 kHz. For 10 kΩ loads, the THD+N performance is better than 0.005% at 1 kHz, and less than 0.01% across the audio band of 20 to 20 kHz. The TPA152 is ideal for use as an output buffer for the audio CODEC in PC systems. It is also excellent for use where a high-performance head phone/line-out amplifier is needed. Depop circuitry is integrated to reduce transients during power up, power down, and mute mode. Amplifier gain is externally configured by means of two resistors per input channel and does not require external compensation for settings of 1 to 10. The TPA152 is packaged in the 8-pin SOIC (D) package that reduces board space and facilitates automated assembly. typical application circuit RF 6 VDD CB Stereo Audio Input RI 8 IN1– R – 3 BYPASS CI CC VO1 1 RC + CB From System Control 2 RI L RL Depop Circuitry Mute Control RL Stereo 4 IN2– – CI VO2 5 CC + RC RF Copyright  2000, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 AVAILABLE OPTIONS TA PACKAGED DEVICE SMALL OUTLINE TPA152D† – 40°C to 85°C † The D packages are available taped and reeled. To order a taped and reeled part, add the suffix R (e.g., TPA152DR) Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. BYPASS 3 BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a 0.1-µF to 1-µF capacitor. GND 7 GND is the ground connection. IN1– 8 I IN1– is the inverting input for channel 1. IN2– 4 I IN2– is the inverting input for channel 2. MUTE 2 I A logic high puts the device into MUTE mode. VDD VO1 6 I 1 O VDD is the supply voltage terminal. VO1 is the audio output for channel 1. VO2 5 O VO2 is the audio output for channel 1. 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡ Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Input voltage , VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . internally limited (See Dissipation Rating Table) Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 150° C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 125° C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE D TA ≤ 25°C 724 mW DERATING FACTOR TA = 70°C 464 mW 5.8 mW/°C TA = 85°C 376 mW recommended operating conditions Supply voltage, VDD Operating free-air temperature, TA MIN MAX 4.5 5.5 UNIT V – 40 85 °C TYP MAX dc electrical characteristics at TA = 25°C, VDD = 5 V PARAMETER VOO TEST CONDITIONS MIN Output offset voltage 10 Supply ripple rejection ratio VDD = 4.9 V to 5.1 V See Figure 13 81 UNIT mV dB IDD IDD(MUTE) Supply current 5.5 14 mA Supply current in MUTE 5.5 14 mA ZI Input impedance >1 MΩ ac operating characteristics VDD = 5 V, TA = 25°C, RL = 32 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS Output power (each channel) THD ≤ 0.03%, Gain = 1, THD+N Total harmonic distortion plus noise PO = 75 mW, See Figure 2 20 Hz–20 kHz, Gain = 1, BOM Maximum output power bandwidth THD 20 kHz 80° See Figure 12 See Figure 11 Vn Noise output voltage † Measured at 1 kHz. NOTES: 1. The dc output voltage is approximately VDD/2. 2. Output power is measured at the output pins of the IC at 1 kHz. POST OFFICE BOX 655303 MIN • DALLAS, TEXAS 75265 65 dB 110 dB 102 dB 104 dB 6 µV(rms) 3 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 ac operating characteristics VDD = 5 V, TA = 25°C, RL = 10 kΩ PARAMETER THD+N BOM kSVR TEST CONDITIONS MIN TYP VI = 1 V(rms), See Figure 6 20 Hz–20 kHz, Gain = 1, VO(PP) = 4 V, See Figure 8 20 Hz–20 kHz, Gain = 1, Maximum output power bandwidth G = 5, THD 20 Phase margin Open loop, See Figure 16 80° Supply voltage rejection ratio 1 kHz, CB = 1 µF, Mute attenuation See Figure 15 Ch/Ch output separation See Figure 13 Signal-to-Noise ratio VO = 1 V(rms), See Figure 10 Total harmonic distortion plus noise Vn Noise output voltage † Measured at 1 kHz. Gain = 1, See Figure 12 See Figure 11 MAX UNIT 0.005% 0.005% kHz 65 dB 110 dB 102 dB 104 dB 6 µV(rms) TYPICAL CHARACTERISTICS Table of Graphs FIGURE THD+N Total harmonic distortion plus noise vs Output power THD+N Total harmonic distortion plus noise vs Frequency THD+N Total harmonic distortion plus noise vs Output voltage 5, 7 Vn SNR Output noise voltage vs Frequency 10 Signal-to-noise ratio vs Gain 11 Supply ripple rejection ratio vs Frequency 12 Crosstalk vs Frequency 13, 14 Mute Attenuation vs Frequency 15 Open-loop gain and phase vs Frequency 16, 17 Closed-loop gain and phase vs Frequency 18 IDD PO Supply current vs Supply voltage 19 Output power vs Load resistance 20 PD Power dissipation vs Output power 21 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1, 4 2, 3, 6, 8, 9 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 2 THD+N –Total Harmonic Distortion + Noise – % THD+N –Total Harmonic Distortion + Noise – % 2 f = 1 kHz AV = –1 V/V 1 0.1 0.01 0.001 1 10 20 30 40 50 60 70 80 1 PO = 75 mW RL = 32 Ω AV = –5 V/V AV =– 2 V/V 0.1 AV = –1 V/V 0.01 0.001 20 90 100 PO – Output Power – mW Figure 2 TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT POWER 2 AV = –1 V/V RL = 32 Ω THD+N –Total Harmonic Distortion + Noise – % THD+N –Total Harmonic Distortion + Noise – % 0.3 PO = 75 mW PO = 25 mW 0.01 PO = 50 mW 0.001 20 100 10k 20k f – Frequency – Hz Figure 1 0.1 1k 1k 10k 20k 1 RL = 32 Ω 20 kHz 0.1 1 kHz 0.01 20 Hz 0.001 0.1 f – Frequency – Hz 1 10 100 PO – Output Power – mW Figure 3 Figure 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT VOLTAGE TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 0.1 THD+N –Total Harmonic Distortion + Noise – % THD+N –Total Harmonic Distortion + Noise – % 2 f = 1 kHz AV = –1 V/V RL = 10 kΩ 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VO = 1 V(rms) RL = 10 kΩ AV = –5 V/V 0.01 AV = –2 V/V AV = –1 V/V 0.001 20 1.8 100 VO – Output Voltage – V(rms) Figure 6 TOTAL HARMONIC DISTORTION PLUS NOISE vs OUTPUT VOLTAGE TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 0.1 THD+N –Total Harmonic Distortion + Noise – % THD+N –Total Harmonic Distortion + Noise – % 2 AV = –1 V/V RL = 10 kΩ f = 20 kHz 0.1 f = 20 Hz 0.01 f = 1 kHz 0.001 0.1 0.2 0.4 1 2 VO(PP) = 4 V AV = –1 V/V RL = 10 kΩ 0.01 0.001 20 VO – Output Voltage – V(rms) 100 1k f – Frequency – Hz Figure 7 6 10k 20k f – Frequency – Hz Figure 5 1 1k Figure 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 10k 20k TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY OUTPUT NOISE VOLTAGE vs FREQUENCY 20 VI = 1 V(rms) AV = –1 V/V Vn – Output Noise Voltage – µV THD+N –Total Harmonic Distortion + Noise – % 0.1 RL = 32 Ω 0.01 RL = 10,47, and 100 kΩ 0.001 20 100 1k 10 VDD = 5 V BW = 10 Hz to 22 kHz RL = 32 Ω to 10 kΩ AV = –1 V/V 1 20 10k 20k 100 f – Frequency – Hz Figure 9 10k 20k Figure 10 SIGNAL-TO-NOISE RATIO vs GAIN SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY 110 0 RI = 20 kΩ VDD = 5 V RL = 32 Ω to 10 kΩ –10 Supply Ripple Rejection Ratio – dB 105 SNR – Signal-to-Noise Ratio – dB 1k f – Frequency – Hz 100 95 RL = 10 kΩ 90 RL = 32 Ω 85 –20 CB = 0.1 µF –30 –40 –50 –60 CB = 1 µF –70 –80 CB = 2.5 V –90 80 1 2 3 4 5 6 7 8 9 10 –100 20 Gain – V/V 100 1k 10k 20k f – Frequency – Hz Figure 11 Figure 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS CROSSTALK vs FREQUENCY CROSSTALK vs FREQUENCY –60 –70 VO = 1 V VDD = 5 V RL = 10 kΩ CB = 1 µF AV = –1 V/V –70 –80 –80 Crosstalk – dB Crosstalk – dB –60 PO = 75 mW VDD = 5 V RL = 32 Ω CB = 1 µF AV = –1 V/V –90 Right to Left –90 –100 Right to Left –100 –110 –110 –120 Left to Right –120 20 Left to Right 100 1k 10k 20k –130 20 100 1k f – Frequency – Hz f – Frequency – Hz Figure 13 Figure 14 MUTE ATTENUATION vs FREQUENCY –70 VDD = 5 V RL = 32Ω CB = 1 µF Mute Attenuation – dB –80 90 –100 –110 –120 –130 –140 20 100 1k f – Frequency – Hz Figure 15 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 10k 20k 10k 20k TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS OPEN-LOOP GAIN AND PHASE vs FREQUENCY 100 No Load 140 120 60 100 40 80 20 60 Phase – ° Open-Loop Gain – dB 80 160 40 0 20 –20 100 1k 100k 10k 1M 10M 0 100M f – Frequency – Hz Figure 16 CLOSED-LOOP GAIN AND PHASE vs FREQUENCY 1 185 0.8 180 0.4 175 0.2 0 170 –0.2 Phase – ° Closed-Loop Gain – dB 0.6 165 –0.4 RI = 20 kΩ Rf = 20 kΩ RL = 32 Ω CI = 1 µF AV = –1 V/V –0.6 –0.8 –1 10 100 1k 10k 100k 160 155 1M f – Frequency – Hz Figure 17 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS CLOSED-LOOP GAIN AND PHASE vs FREQUENCY 1 185 0.8 180 0.4 175 0.2 0 170 –0.2 Phase – ° Closed-Loop Gain – dB 0.6 165 –0.4 RI = 20 kΩ Rf = 20 kΩ RL = 10 kΩ CI = 1 µF AV = –1 V/V –0.6 –0.8 160 –1 100 10 1k 10k 155 1M 100k f – Frequency – Hz Figure 18 OUTPUT POWER vs LOAD RESISTANCE 10 90 9 80 PO – Output Power – mW I DD – Supply Current – mA SUPPLY CURRENT vs SUPPLY VOLTAGE 8 7 6 5 4 THD+N = 0.1% AV = –1 V/V 70 60 50 40 30 20 3 4.5 5 5.5 10 30 50 Figure 19 10 70 90 110 130 150 Figure 20 POST OFFICE BOX 655303 170 190 210 RL – Load Resistance – Ω VDD – Supply Voltage – V • DALLAS, TEXAS 75265 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 TYPICAL CHARACTERISTICS POWER DISSIPATION vs OUTPUT POWER 100 P D – Power Dissipation – mW RL = 32 Ω 80 60 40 20 0 0 5 10 15 20 25 PO – Output Power – mW Figure 21 APPLICATION INFORMATION selection of components Figure 22 is a schematic diagram of a typical application circuit. CI 1 µF RF 20 kΩ RI 20 kΩ CC 330 µF Audio Input 1 1 Shutdown (from System Control) 2 VO1 IN1– MUTE GND RO † 20 kΩ 8 7 3 4 CI 1 µF Audio Input 2 IN 2 VDD IN2– VO2 RI 20 kΩ RF 20 kΩ 6 RL 32 Ω RL 32 Ω HP Jack 1 µF CB 1 µF RC† 100 Ω VDD 5 RO † 20 kΩ CC 330 µF RC† 100 Ω † These resistors are optional. Adding these resistors improves the depop performance of the TPA152. Figure 22. TPA152 Typical Application Circuit POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 APPLICATION INFORMATION ǒǓ gain setting resistors, RF and RI The gain for the TPA152 is set by resistors RF and RI according to equation 1. Gain +* RF (1) RI Given that the TPA152 is a MOS amplifier, the input impedance is very high, consequently input leakage currents are not generally a concern although noise in the circuit increases as the value of RF increases. In addition, a certain range of RF values are required for proper start-up operation of the amplifier. Taken together it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5 kΩ and 20 kΩ. The effective impedance is calculated in equation 2. Effective Impedance + RRF)RRI F (2) I As an example, consider an input resistance of 20 kΩ and a feedback resistor of 20 kΩ. The gain of the amplifier would be – 1 and the effective impedance at the inverting terminal would be 10 kΩ, which is within the recommended range. For high performance applications, metal film resistors are recommended because they tend to have lower noise levels than carbon resistors. For values of RF above 50 kΩ, the amplifier tends to become unstable due to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small compensation capacitor of approximately 5 pF should be placed in parallel with RF. This, in effect, creates a low-pass filter network with the cutoff frequency defined in equation 3. f c(lowpass) + 2 p R1 C (3) F F For example if RF is 100 kΩ and CF is 5 pF then fco(lowpass) is 318 kHz, which is well outside the audio range. input capacitor, CI In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency determined in equation 4. f c(highpass) + 2 p R1 C (4) I I The value of CI is important to consider as it directly affects the bass (low frequency) performance of the circuit. Consider the example where RI is 20 kΩ and the specification calls for a flat bass response down to 20 Hz. Equation 4 is reconfigured as equation 5. CI + 2pR f 1 (5) I c(highpass) In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high-gain applications (> 10). For this reason a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/2, which is likely higher that the source dc level. Please note that it is important to confirm the capacitor polarity in the application. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 APPLICATION INFORMATION power supply decoupling, CS The TPA152 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device VDD lead, works best. For filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near the power amplifier is recommended. midrail bypass capacitor, CB The midrail bypass capacitor, CB, serves several important functions. During startup or recovery from shutdown mode, CB determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into the subaudible range (so slow it can not be heard). The second function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier. The capacitor is fed from a 160-kΩ source inside the amplifier. To keep the start-up pop as low as possible, the relationship shown in equation 6 should be maintained. ǒ 1 160 kΩ CB 1 v Ǔ ǒC R Ǔ (6) I I As an example, consider a circuit where CB is 1 µF, CI is 1 µF and RI is 20 kΩ. Inserting these values into the equation 9 results in: 6.25 v 50 which satisfies the rule. Bypass capacitor, CB, values of 0.1 µF to 1 µF ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance. output coupling capacitor, CC In the typical single-supply single-ended (SE) configuration, an output coupling capacitor (CC) is required to block the dc bias at the output of the amplifier thus preventing dc currents in the load. As with the input coupling capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by equation 7. f c(high) + 2 p R1 C (7) L C The main disadvantage, from a performance standpoint, is that the load impedances are typically small, which drive the low-frequency corner higher. Large values of CC are required to pass low frequencies into the load. Consider the example where a CC of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes the frequency response characteristics of each configuration. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TPA152 75-mW STEREO AUDIO POWER AMPLIFIER SLOS210A – JUNE 1998 – REVISED MARCH 2000 APPLICATION INFORMATION Table 1. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode RL CC 68 µF LOWEST FREQUENCY 32 Ω 10,000 Ω 68 µF 0.23 Hz 47,000 Ω 68 µF 0.05 Hz 73 Hz As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for example) is very good. The output coupling capacitor required in single-supply SE mode also places additional constraints on the selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following relationship: ǒ CB 1 160 kΩ Ǔvǒ ǓƠ 1 CI RI 1 R LC C (8) output pull-down resistor, RC + RO Placing a 100-Ω resistor, RC, from the output side of the coupling capacitor to ground insures the coupling capacitor, CC, is charged before a plug is inserted into the jack. Without this resistor, the coupling capacitor would charge rapidly upon insertion of a plug, leading to an audible pop in the headphones. Placing a 20-kΩ resistor, RO, from the output of the IC to ground insures that the coupling capacitor fully discharges at power down. If the supply is rapidly cycled without this capacitor, a small pop may be audible in 10-kΩ loads. using low-ESR capacitors Low-ESR capacitors are recommended throughout this applications section. A real capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor. 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TPA152D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TPA152 Samples TPA152DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TPA152 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of