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TPD1E10B09
SLLSEB0D – FEBRUARY 2012 – REVISED SEPTEMBER 2015
TPD1E10B09 Single-Channel ESD Protection Device in 0402 Package
1 Features
3 Description
•
The TPD1E10B09 device is a single-channel
electrostatic discharge (ESD) transient voltage
suppression (TVS) diode in a small 0402 package.
This ESD protection diode offers ±20 kV IEC 610004-2 (level 4) contact and air-gap ESD protection. The
back-to-back TVS diode configuration allows for
bipolar or bidirectional signal support. The 10-pF line
capacitance is suitable for a wide range of
applications supporting data rates up to 500 Mbps.
The 0402 package is an industry standard and is
convenient for component placement in spaceconstrained applications.
1
•
•
•
•
•
•
•
•
•
Provides System-Level ESD Protection for I/O
Interfaces up to ±9 V
IEC 61000-4-2 Level 4
– ±20 kV (Air-Gap Discharge),
– ±20 kV (Contact Discharge)
IEC 61000-4-5 Surge Protection
– 4.5 A (8/20 µs)
I/O Capacitance 10 pF (Typical)
RDYN 0.5 Ω (Typical)
DC Breakdown Voltage ±9.5 V (Minimum)
Ultra Low Leakage Current 100 nA (Maximum)
13-V Clamping Voltage (Max at IPP = 1 A)
Industrial Temperature Range: –40°C to 125°C
Space-Saving 0402 Footprint
(1 mm × 0.6 mm × 0.5 mm)
Typical applications of this ESD protection TVS diode
are circuit protection for audio lines (microphone,
earphone, and speaker phone), SD interfacing,
keypad or other buttons, VBUS pin and ID pin of USB
ports, and general-purpose I/O ports. This ESD clamp
is good for the protection of end equipment like
eBooks, tablets, remote controllers, wearables, settop boxes, and electronic point of sale equipment.
2 Applications
•
•
Device Information(1)
End Equipment:
– Tablets
– Remote Controllers
– Wearables
– Set-Top Boxes
– Electronic Point of Sale (EPOS)
– eBooks
Interfaces:
– Audio Lines
– Push-buttons
– General-Purpose Input and Output (GPIO)
PART NUMBER
TPD1E10B09
PACKAGE
X1SON (2)
BODY SIZE (NOM)
0.60 mm × 1.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Application Schematic
IO Line 1
IO Line 2
Connector
(Source of ESD)
1
1
2
2
ESD Sensitive Device
GND Line
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD1E10B09
SLLSEB0D – FEBRUARY 2012 – REVISED SEPTEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
3
3
3
4
4
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
7.4 Device Functional Modes.......................................... 7
8
Application and Implementation .......................... 8
8.1 Application Information.............................................. 8
8.2 Typical Application .................................................... 8
9 Power Supply Recommendations...................... 10
10 Layout................................................................... 10
10.1 Layout Guidelines ................................................. 10
10.2 Layout Example .................................................... 10
11 Device and Documentation Support ................. 11
11.1
11.2
11.3
11.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
11
11
11
11
12 Mechanical, Packaging, and Orderable
Information ........................................................... 11
4 Revision History
Changes from Revision C (Aug 2015) to Revision D
•
Added capacitive measurement frequency ............................................................................................................................ 4
Changes from Revision B (June 2015) to Revision C
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Revision A (March 2012) to Revision B
•
Page
Page
Added THERMAL INFORMATION table. ............................................................................................................................... 4
Changes from Original (February 2012) to Revision A
Page
•
Updated FEATURES. ............................................................................................................................................................. 1
•
Added graphs to TYPICAL CHARACTERISTICS section...................................................................................................... 5
•
Added APPLICATION INFORMATION section...................................................................................................................... 8
2
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5 Pin Configuration and Functions
DPY Package
2-Pin X1SON
Top View
1
2
Pin Functions
PIN
1
2
I/O
DESCRIPTION
I/O
ESD protected I/O
6 Specifications
6.1 Absolute Maximum Ratings
Operating temperature
IPP
Peak pulse current (tp = 8/20 µs)
PPP
Peak pulse power (tp = 8/20 µs)
Tstg
Storage temperature
MIN
MAX
UNIT
–40
125
°C
4.5
A
–65
90
W
155
°C
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
(1)
(2)
Electrostatic discharge
UNIT
±2500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
IEC 61000-4-2 Contact Discharge
20000
IEC 61000-4-2 Air-Gap Discharge
20000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Operating free-air temperature, TA
Operating voltage
Pin 1 to 2 or pin 2 to 1
NOM
MAX
UNIT
–40
125
°C
–9
9
V
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6.4 Thermal Information
TPD1E10B09
THERMAL METRIC (1)
DPY (X1SON)
UNIT
2 PINS
RθJA
Junction-to-ambient thermal resistance
615.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
404.8
°C/W
RθJB
Junction-to-board thermal resistance
493.3
°C/W
ψJT
Junction-to-top characterization parameter
127.7
°C/W
ψJB
Junction-to-board characterization parameter
493.3
°C/W
P
Power Dissipation (2)
162
mW
(1)
(2)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Max junction temperature: 125°C; power dissipation calculated at 25°C ambient temperature using JEDEC High K board Standard. Not
to be used for steady state power dissipation in the breakdown region.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
Pin 1 to 2 or pin 2 to 1
ILEAK
Leakage current
Pin 1 = 5 V, pin 2 = 0 V
VClamp1,2
Clamp voltage with ESD strike on pin 1, pin 2
grounded.
IPP = 1 A, tp = 8/20 μSec (1)
13
IPP = 5 A, tp = 8/20 μSec (1)
17
VClamp2,1
Clamp voltage with ESD strike on pin 2, pin 1
grounded.
IPP = 1 A, tp = 8/20 μSec (1)
13
IPP = 4.5 A, tp = 8/20 μSec (1)
20
RDYN
Dynamic resistance
CIO
I/O capacitance
VIO = 2.5 V; f = 1 MHz
VBR1,2
Break-down voltage, pin 1 to pin 2
IIO = 1 mA
9.5
V
VBR2,1
Break-down voltage, pin 2 to pin 1
IIO = 1 mA
9.5
V
(1)
(2)
4
Pin 1 to pin 2 (2)
0.5
(2)
0.5
Pin 2 to pin 1
10
9
V
100
nA
V
V
Ω
pF
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.
Extraction of RDYN using least squares fit of TLP characteristics from IPP = 10 A to IPP = 20 A.
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6.6 Typical Characteristics
10
80
0
70
-10
60
-20
Amplitude (V)
50
40
30
-30
-40
-50
20
-60
10
-70
0
-80
-10
-15
15
45
75
105
135
Time (nS)
165
195
-90
-15
225
30
27
27
24
24
21
21
18
15
75
105
135
Time (nS)
165
195
225
12
18
15
12
9
9
6
6
3
3
0
0
0
3
6
9
12
15
18
Voltage (V)
21
24
27
30
0
Figure 3. Transmission Line Pulse (TLP) Waveform Pin 1 to
Pin 2
800x10
-6
600x10-6
Current (A)
400x10-6
200x10-6
0x100
-200x10-6
-400x10-6
-600x10-6
-800x10-6
-1x10-3
-14 -12 -10 -8
-6
-4
-2 0 2
Voltage (V)
4
Figure 5. IV Curve
6
8
10 12 14
3
6
9
12
15
18
Voltage (V)
21
24
27
30
Figure 4. Transmission Line Pulse (TLP) Waveform Pin 2 to
Pin 1
1x10-3
Current (A)
45
Figure 2. ESD Clamp Voltage –8 kV Contact ESD
30
Current (A)
Current (A)
Figure 1. ESD Clamp Voltage +8 kV Contact ESD
15
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
30
Time (nS)
35
140
Current (A) 130
Power (W) 120
110
100
90
80
70
60
50
40
30
20
10
0
40
45
50
Power (W)
Amplitude (V)
90
Figure 6. Positive Surge Waveform 8/20 µs
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0
5
10
15
20
25
30
Time (nS)
35
140
Current (A) 130
Power (W) 120
110
100
90
80
70
60
50
40
30
20
10
0
40
45
50
Capacitance (pF)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Power (W)
Current (A)
Typical Characteristics (continued)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Figure 7. Negative Surge Waveform 8/20 µs
0.5
1
1.5
2
2.5
3
VBIAS (V)
3.5
4
4.5
5
Figure 8. Pin Capacitance Across VBIAS
3
0
-3
-6
Gain (dB)
-9
-12
-15
-18
-21
-24
-27
-30
-33
1x103
10x103
100x103
1x106
10x106
Frequency (Hz)
100x106
1x109
10x109
Figure 9. Insertion Loss
6
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7 Detailed Description
7.1 Overview
TPD1E10B09 is a single-channel ESD TVS that provides ±20-kV IEC 61000-4-2 (Level 4) contact and air-gap
ESD protection. The 10-pF back-to-back diode architecture is suitable for signals that range from –9 V to 9 V and
supports data rates up to 500 Mbps. The industry-standard 0402 package is convenient for placement in
applications with limited space.
7.2 Functional Block Diagram
1
2
7.3 Feature Description
TPD1E10B09 is a bidirectional TVS with high ESD protection level. This device protects circuit from ESD strikes
up to ±20-kV contact and ±20-kV air-gap specified in the IEC 61000-4-2 level 4 international standard. The
device can also handle up to 4.5-A surge current (IEC 61000-4-5 8/20 µs). The I/O capacitance of 10 pF
supports a data rate up to 500 Mbps. This clamping device has a small dynamic resistance of 0.5 Ω typically.
This makes the clamping voltage low when the device is actively protecting other circuits. For example, the
clamping voltage is only 13 V when the device is taking 1-A transient current. The breakdown is bidirectional so
that this protection device is a good fit for GPIO, especially audio lines which carry bidirectional signals. Low
leakage allows the diode to conserve power when working below the VRWM. The industrial temperature range of
–40°C to 125°C makes this ESD device work at extensive temperatures in most environments. The space-saving
0402 package can fit into small electronic devices like mobile equipment and wearables.
7.4 Device Functional Modes
TPD1E10B09 is a passive clamp that has low leakage during normal operation when the voltage between pin 1
and pin 2 is below VRWM and activates when the voltage between pin 1 and pin 2 goes above VBR. During IEC
ESD events, transient voltages as high as ±20 kV can be clamped between the two pins. When the voltages on
the protected lines fall below the trigger voltage, the device reverts back to the low leakage passive state.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPD1E10B09 is a single-channel back-to-back diode that protects one bidirectional signal line from
electrostatic discharge and surge pulses. Because the diode is bidirectional, TPD1E10B09 protects signals that
have positive or negative polarity. During normal operation, the diode behaves as a 10-pF capacitance to ground.
Board layout is critical for optimal performance of any diode.
Placement: The diode should be placed very close to the external connector for optimal performance. Ideally, the
diode should be placed on the line that it is protecting.
Layout: Pin 1 of the diode should be right over the protected signal line. There should a thick and short trace
from pin 2 to ground. An example is shown in Layout.
8.2 Typical Application
A system with a human interface is vulnerable to large system-level ESD strikes that standard ICs cannot
survive. TVS ESD protection diodes are typically used to suppress ESD at these connectors. TPD1E10B09 is a
single-channel ESD protection device containing back-to-back TVS diodes, which is typically used to provide a
path to ground for dissipating ESD events on bidirectional signal lines between a human interface connector and
a system. As the current from ESD passes through the device, only a small voltage drop is present across the
diode structure. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this
voltage, VCLAMP, to a tolerable level to the protected IC.
L Audio IN
Audio Amplifier
Class AB
(ESD Sensitive)
L Audio
L
GND
R Audio IN
Speaker
Connector
(Source of ESD)
1
1
Audio Amplifier
Class AB
(ESD Sensitive)
R Audio
R
GND
2
GND
2
Figure 10. Typical Application Schematic
8.2.1 Design Requirements
For this design example, two TPD1E10B09s will be used to protect left and right audio channels. Table 1 lists the
known system parameters for this audio application.
Table 1. Design Parameters
8
DESIGN PARAMETER
VALUE
Audio Amplifier Class
AB
Audio signal voltage range
–8 V to 8 V
Audio frequency content
20 Hz to 20 kHz
Required IEC 61000-4-2 ESD Protection
±15-kV Contact/ ±15-kV Air-Gap
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8.2.2 Detailed Design Procedure
To begin the design process, some parameters must be decided upon; the designer should make sure:
• The voltage range on the protected line does not exceed the reverse standoff voltage of the TVS diode(s)
(VRWM).
• The operating frequency is supported by the I/O capacitance, CIO, of the TVS diode.
• The IEC 61000-4-2 protection requirement is covered by the IEC performance of the TVS diode.
For this application, the audio signal voltage range is –8 V to 8 V. The VRWM for the TVS is –9.5 V to 9.5 V;
therefore, the bidirectional TVS will not break down during normal operation, and normal operation of the audio
signal will not be affected due to the signal voltage range. In this application, a bidirectional TVS like
TPD1E10B09 is required.
Next, consider the frequency content of this audio signal. In this application with the class AB amplifier, the
frequency content is from 20 Hz to 20 kHz; ensure that the TVS I/O capacitance will not distort this signal by
filtering it. With TPD1E10B09 typical capacitance of 10 pF, which leads to a typical cutoff frequency of just under
500 MHz, this diode has sufficient bandwidth to pass the audio signal without distorting it.
Finally, the human interface in this application requires protection for ±15-kV Contact and ±15-kV Air-Gap ESD,
which is above the standard Level 4 IEC 61000-4-2 system-level ESD protection. A standard TVS cannot survive
this level of IEC ESD stress. However, TPD1E10B09 can survive at least ±20-kV Contact and ±20-kV Air-Gap
ESD. Therefore, the device can provide sufficient ESD protection for the interface, even though the requirements
are stringent. For any TVS diode to provide its full range of ESD protection capabilities, as well as to minimize
the noise and EMI disturbances the board will see during ESD events, it is crucial that a system designer uses
proper board layout of their TVS ESD protection diodes. See Layout for instructions on properly laying out
TPD1E10B09.
90
10
80
0
70
-10
60
-20
Amplitude (V)
Amplitude (V)
8.2.3 Application Curves
50
40
30
-30
-40
-50
20
-60
10
-70
0
-80
-10
-15
15
45
75
105
135
Time (nS)
165
195
225
Figure 11. ESD Clamp Voltage +8-kV Contact ESD
-90
-15
15
45
75
105
135
Time (nS)
165
195
225
Figure 12. ESD Clamp Voltage –8-kV Contact ESD
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9 Power Supply Recommendations
This device is a passive TVS diode-based ESD protection device, so there is no need to power it. Do not violate
the maximum specifications for each pin.
10 Layout
10.1 Layout Guidelines
•
•
•
•
The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Use rounded corners with the largest radii possible on the protected traces between the TVS and the
connector, thus eliminating any sharp corners.
– Electric fields tend to build up on corners, increasing EMI coupling.
If pin 1 or pin 2 is connected to ground, use a thick and short trace for this return path.
10.2 Layout Example
To connector
To protected IC
Place pin 1 on the signal line
Minimum
distance
from
connector
(source of
ESD)
Thick and short return path to GND
Figure 13. Layout Example
10
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11 Device and Documentation Support
11.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
(3)
Device Marking
(4/5)
(6)
TPD1E10B09DPYR
ACTIVE
X1SON
DPY
2
10000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
TPD1E10B09DPYT
ACTIVE
X1SON
DPY
2
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
(A1, A2, A6, BJ)
(A1, A2, A6, BJ)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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