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TPS22970
SLVSDF2A – MAY 2017 – REVISED JULY 2017
TPS22970 3.6-V, 4-A, 4.7-mΩ On-Resistance Load Switch
1 Features
3 Description
•
•
The TPS22970 is a small, space-saving load switch
with controlled Turn-ON to reduce inrush current. The
device contains an N-channel MOSFET that can
operate over an input voltage range of 0.65 V to 3.6
V and pulsed switch currents up to 4 A. An integrated
charge pump biases the NMOS switch in order to
achieve a minimum switch ON resistance (RON). The
switch is controlled by an on and off input (ON),
which is capable of interfacing directly with lowvoltage control signals.
1
•
•
•
•
•
•
•
Input Voltage Range (VIN): 0.65 V to 3.6 V
On-Resistance
– RON = 4.7 mΩ (Typical) at VIN ≥ 1.8 V
– RON = 5.1 mΩ (Typical) at VIN = 1.05 V
– RON = 6.4 mΩ (Typical) at VIN = 0.65 V
Maximum Continuous Switch Current (IMAX): 4 A
ON State (IQ): 30 µA (Typical) at VIN > 1.2 V
OFF State (ISD): 1 µA (Typical) at VIN > 1.8 V
Controlled Slew Rate to Avoid Inrush Current
– 3.6 V Turn-ON time (tON): 1530 μs
– 0.65 V Turn-ON time (tON): 815 μs
Low Threshold Enable (ON) Supports Use of
Logic as Low as 0.9 V (VIH) of Logic
Thermal Shutdown (TSD)
Quick Output Discharge (QOD): 150-Ω (Typical)
The TPS22970 has a 150-Ω on-chip resistor for quick
discharge of the output when switch is disabled to
avoid any unknown state caused by floating supply to
the downstream load.
The TPS22970 has an internally controlled rise time
in order to reduce inrush current.
2 Applications
•
•
•
•
•
The TPS22970 is capable of thermal shutdown when
the junction temperature is above the threshold,
turning the switch off. The switch turns on again when
the junction temperature stabilizes to a safe range.
Notebook, Tablet
Industrial PC
Smartphones
Telecom
Storage
The TPS22970 is available in an ultra-small, space
saving 8-pin WCSP package and is characterized for
operation over the free-air temperature range of
–40°C to +105°C.
Device Information(1)
PART NUMBER
TPS22970YZPT
PACKAGE
DSBGA (8)
BODY SIZE (NOM)
1.90 mm × 0.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
Power Supply
CIN
VIN
VOUT
VIN
VOUT
VIN
ON
ON
CL
RL
VOUT
TPS22970
GND
GND
OFF
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22970
SLVSDF2A – MAY 2017 – REVISED JULY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
6
7
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical DC Characteristics........................................
Typical AC Characteristics........................................
Parameter Measurement Information ................ 10
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 11
8.4 Device Functional Modes........................................ 11
9
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Application ................................................. 12
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 15
12 Device and Documentation Support ................. 16
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
16
16
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (May 2017) to Revision A
•
2
Page
Changed device status from "Advance Information" to " Production Data" ........................................................................... 1
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5 Pin Configuration and Functions
YZP Package
8-Pin DSBGA
Laser Marking View
YZP Package
8-Pin DSBGA
Bump View
D
ON
GND
ON
D
GND
ON
C
VIN
VOUT
C
VOUT
VIN
B
VIN
VOUT
B
VOUT
VIN
A
VIN
VOUT
A
VOUT
VIN
2
1
1
2
Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
GND
D1
GND
Ground
ON
D2
I
Switch control input. Do not leave floating
I
Switch input
O
Switch output
A2
VIN
B2
C2
A1
VOUT
B1
C1
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VIN
Input voltage
–0.3
4
V
VOUT
Output voltage
–0.3
4
V
VON
ON voltage
–0.3
4
V
IMAX
Maximum continuous switch current
4
A
IPLS
Maximum pulsed switch current, pulse < 300-µs, 2% duty cycle
6
A
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
Internally Limited
–65
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
0.65
3.6
V
VIN
V
0.9
3.6
V
0
0.45
V
Operating temperature
–40
125
°C
Operating free-air temperature
–40
105
°C
VIN
Input voltage
VOUT
Output voltage
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
TJ
TA
UNIT
6.4 Thermal Information
TPS22970
THERMAL METRIC
(1)
YZP (DSBGA)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
130
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
54
°C/W
RθJB
Junction-to-board thermal resistance
51
°C/W
ψJT
Junction-to-top characterization parameter
1
°C/W
ψJB
Junction-to-board characterization parameter
50
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
Unless otherwise noted, VIN = 0.65 V to 3.6 V
PARAMETER
TEST CONDITIONS
VIN > 1.2 V
IQ
Quiescent current
VOUT = Open,
Switch enabled
VIN ≤ 1.2 V
VIN > 1.8 V
ISD
Shutdown current
VOUT = GND, Switch
disabled
VIN ≤ 1.8 V
TA
–40°C to +85°C
TYP
MAX
30
65
–40°C to +105°C
–40°C to +85°C
75
20
–40°C to +105°C
–40°C to +85°C
–40°C to +85°C
1
RON
ON-resistance
IOUT = –200 mA
–40°C to +85°C
9.5
11.5
4.9
9.1
10.1
–40°C to +105°C
12.1
5.1
9.4
–40°C to +85°C
10.4
–40°C to +105°C
12.4
25°C
VIN = 0.65 V
µA
8.5
–40°C to +85°C
25°C
VIN = 1.05 V
5
9.5
4.7
–40°C to +105°C
VIN = 1.2 V
µA
7.5
18
0.9
–40°C to +105°C
25°C
50
UNIT
55
–40°C to +105°C
25°C
VIN ≥ 1.8 V
MIN
6.4
mΩ
11.5
–40°C to +85°C
12.5
–40°C to +105°C
14.5
VIN = 3.6 V
–40°C to +105°C
150
Ω
VIN = 0.65 V
–40°C to +105°C
710
Ω
RPD
Output pull down
resistance (1)
IOUT = 3 mA, Switch
disabled
ION
ON input leakage
current
VON = 0 V to 3.6 V
TSD
Thermal shutdown
Junction temperature rising
170
°C
TSD,
Thermal shutdown
hysteresis
Junction temperature falling
30
°C
(1)
HYS
–40°C to +105°C
0.1
µA
See the Quick Output Discharge (QOD) section.
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6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.6 V, VON = 3.6 V,
TA = 25°C (unless otherwise noted)
tON
Turn-ON time
CL = 0.1 µF, RL = 10 Ω
1530
tOFF
Turn-OFF time
CL = 0.1 µF, RL = 10 Ω
3.2
tR
VOUT Rise time
CL = 0.1 µF, RL = 10 Ω
985
tF
VOUT Fall time
CL = 0.1 µF, RL = 10 Ω
1.8
tD
ON delay time
CL = 0.1 µF, RL = 10 Ω
550
1170
µs
VIN = 1.8 V, VON = 3.6 V,
TA = 25°C (unless otherwise noted)
tON
Turn-ON time
CL = 0.1 µF, RL = 10 Ω
tOFF
Turn-OFF time
CL = 0.1 µF, RL = 10 Ω
4.9
tR
VOUT Rise Time
CL = 0.1 µF, RL = 10 Ω
645
tF
VOUT Fall time
CL = 0.1 µF, RL = 10 Ω
2.2
tD
ON delay time
CL = 0.1 µF, RL = 10 Ω
525
µs
VIN = 0.65 V, VON = 3.6 V,
TA = 25°C (unless otherwise noted)
tON
Turn-ON time
CL = 0.1 µF, RL = 10 Ω
815
tOFF
Turn-OFF time
CL = 0.1 µF, RL = 10 Ω
61
tR
VOUT Rise time
CL = 0.1 µF, RL = 10 Ω
320
tF
VOUT Fall time
CL = 0.1 µF, RL = 10 Ω
6.3
tD
ON delay time
CL = 0.1 µF, RL = 10 Ω
495
6
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6.7 Typical DC Characteristics
45
9
VIN =
3.6 V
2.5 V
1.8 V
40
35
7
ISD (PA)
IQ (PA)
1.2 V
1.05 V
0.65 V
6
30
25
20
5
4
3
15
2
10
1
5
-40
-25
-10
5
20
35
50
Temperature (°C)
65
80
0
-40
95 105
VOUT = Open
-10
5
20
35
50
Temperature (°C)
VON = 0 V
Figure 1. Quiescent Current vs Temperature
65
80
95 105
D002
VOUT = GND
Figure 2. Input Shutdown Current vs Temperature
1000
9
8
-25
D001
VON = 3.6 V
VIN =
3.6 V
2.5 V
1.8 V
900
1.2 V
1.05 V
0.65 V
800
VIN =
3.6 V
0.65 V
700
RPD (:)
7
RON (m:)
VIN =
3.6 V
2.5 V
1.8 V
8
1.2 V
1.05 V
0.65 V
6
600
500
400
5
300
4
200
3
-40
-25
-10
5
20
35
50
Temperature (°C)
VON = 3.6 V
65
80
100
-40
95 105
-25
-10
5
D003
IOUT = -200 mA
20
35
50
Temperature (°C)
VON = 0 V
Figure 3. On-Resistance vs Temperature
65
80
95 105
D004
IOUT = 3 mA
Figure 4. Output Pull-Down Resistance vs Temperature
6.8 Typical AC Characteristics
2100
80
VIN =
3.6 V
1.8 V
1.05 V
0.65 V
1700
60
1500
50
1300
30
900
20
700
10
-25
-10
5
20
35
50
Temperature (°C)
65
80
95 105
1.05 V
0.65 V
40
1100
500
-40
VIN =
3.6 V
1.8 V
70
tOFF (Ps)
tON (Ps)
1900
0
-40
D005
Figure 5. Turn-ON Time vs Temperature
-25
-10
5
20
35
50
Temperature (°C)
65
80
95 105
D006
Figure 6. Turn-OFF Time vs Temperature
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Typical AC Characteristics (continued)
1400
8
VIN =
3.6 V
1.8 V
1200
1.05 V
0.65 V
1.05 V
0.65 V
6
tFALL (Ps)
1000
tRISE (Ps)
VIN =
3.6 V
1.8 V
7
800
5
4
600
3
400
2
200
-40
-25
-10
5
20
35
50
Temperature (°C)
65
80
95 105
1
-40
-25
-10
D007
5
20
35
50
Temperature (°C)
RL = 10 Ω
Figure 7. Rise Time vs Temperature
65
80
95 105
D008
CL = 0.1 µF
Figure 8. Fall Time vs Temperature
800
VIN =
3.6 V
1.8 V
750
700
1.05 V
0.65 V
tDELAY (Ps)
650
600
550
500
450
400
350
300
250
-40
-25
-10
5
20
35
50
Temperature (°C)
RL = 10 Ω
65
80
95 105
D009
CL = 0.1 µF
RL = 10 Ω
Figure 9. Delay Time vs Temperature
RL = 10 Ω
TA = 25°C
CL = 0.1 µF
CL = 0.1 µF
Figure 10. Turn-ON Response at 3.6 VIN
RL = 10 Ω
Figure 11. Turn-ON Response at 1.8 VIN
8
TA = 25°C
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TA = 25°C
CL = 0.1 µF
Figure 12. Turn-ON Response at 0.65 VIN
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Typical AC Characteristics (continued)
RL = 10 Ω
TA = 25°C
CL = 0.1 µF
RL = 10 Ω
Figure 13. Turn-OFF Response at 3.6 VIN
RL = 10 Ω
TA = 25°C
CL = 0.1 µF
Figure 14. Turn-OFF Response at 1.8 VIN
CL = 0.1 µF
RL = OPEN
Figure 15. Turn-OFF Response at 0.65 VIN
RL = OPEN
TA = 25°C
TA = 25°C
CL = 147 µF
Figure 16. Inrush Current at 3.6 VIN
TA = 25°C
CL = 147 µF
Figure 17. Inrush Current at 0.65 VIN
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7 Parameter Measurement Information
VOUT
VIN
SMPS
CIN
OFF
CL
ON
RL
ON
TPS22970
GND
GND
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Figure 18. TPS22970 Test Circuit
Figure 19. tON and tOFF Waveforms
10
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8 Detailed Description
8.1 Overview
The TPS22970 is a single channel, 4-A load switch in a small, space-saving WCSP-8 package. This device
implements a low resistance N-channel MOSFET with a controlled rise time for applications that need to limit the
inrush current.
This device is also designed to have very low leakage current during off state, which prevents downstream
circuits from pulling high standby current from the supply. Integrated control logic, driver, power supply, and
output discharge FET eliminates the need for additional external components, which reduces solution size and
bill of materials (BOM) count.
8.2 Functional Block Diagram
VIN
Charge
Pump
Control
Logic
ON
VOUT
GND
8.3 Feature Description
8.3.1 On and Off Control
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON has a low threshold,
making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic. It
can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V or 3.3-V GPIOs. This pin does not have an internal
bias and must not be left floating for proper functionality.
8.3.2 Quick Output Discharge (QOD)
The TPS22970 includes a QOD feature. When the switch is disabled, a discharge resistor is connected between
VOUT and GND. This resistor has a typical value of 150 Ω and prevents the output from floating while the switch
is disabled. The QOD pull-down resistance can vary with input voltage and temperature, see Figure 4
8.4 Device Functional Modes
Table 1 lists the functional modes for the TPS22970.
Table 1. Function Table
TPS22970
ON-Pin
VIN to VOUT
VOUT to GND
Below VIL
OFF
ON
Above VIH
ON
OFF
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 Thermal Consideration
It is recommended to limit the junction temperature (TJ) to below 125°C. To calculate the maximum allowable
dissipation, PD(max) for a given output current and ambient temperature, use Equation 1 as a guideline.
PD(max) =
TJ(max) - TA
θJA
where
•
•
•
•
PD(max) is maximum allowable power dissipation
TJ(max) is maximum allowable junction temperature
TA is ambient temperature of the device
ΘJA is junction to air thermal impedance. See the Thermal Information section. This parameter is highly
dependent upon board layout
(1)
9.2 Typical Application
VOUT
VIN
SMPS
CIN
OFF
CL
ON
RL
ON
TPS22970
GND
GND
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Figure 20. Typical Application Circuit
12
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, below, use the input parameters shown in Table 2.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
0.65 V to 3.6 V
ILOAD
10 mA
Load Capacitance (CL)
800 µF
Maximum voltage drop
1%
Maximum Inrush Current
2.5 A
9.2.2 Detailed Design Procedure
9.2.2.1 Maximum Voltage Drop and On-Resistance
At 3.6-V input voltage, with a maximum voltage drop tolerance of 1%, the TPS22970 has a typical RON of 4.7
mΩ. The rail is supplying 10 mA of current; the voltage drop for a rail is calculated based on Equation 2 and
Equation 3.
VDROP = RON × ILOAD
VDROP = 0.047 mV
(2)
(3)
The maximum voltage drop is 1% which is 36 mV. The voltage drop caused by the load current across the on
resistance is 0.047 mV.
9.2.2.2 Managing Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Inrush current may be calculated using Equation 4.
IINRUSH
CL u SR
CL u0.8 u VIN
tR
where
•
•
•
•
•
IINRUSH is the Inrush current
CL is the Load capacitance
SR is the Output Slew Rate
VIN is the Input voltage
tR is the Rise time
(4)
The typical rise time is 985 μs at VIN = 3.6 V. When CL = 800 µF, the expected inrush current limit at the typical
rise time is 2.34 A.
The typical rise time is 320 μs at VIN = 0.65 V. When CL = 800 µF, the expected inrush current limit at the typical
rise time is 1.3 A.
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9.2.3 Application Curves
VIN = 3.6 V
RL = OPEN
VON = 3.6 V
TA = 25°C
CIN = 1 µF
CL = 800 µF
Figure 21. TPS22970 Inrush Current at 3.6 VIN With CL =
800 µF
14
VIN = 0.65 V
RL = OPEN
VON = 3.6 V
TA = 25°C
CIN = 1 µF
CL = 800 µF
Figure 22. TPS22970 Inrush Current at 0.65 VIN With CL =
800 µF
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10 Power Supply Recommendations
The device is designed to operate from a VIN range of 0.65 V to 3.6 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance of 1 µF is sufficient to prevent the
supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to respond to
a large transient current or large load current step, additional bulk capacitance may be required on the input.
11 Layout
11.1 Layout Guidelines
All traces must be as short as possible for best performance. Using wide traces for VIN, VOUT, and GND helps
minimize the parasitic electrical effects along with minimizing the case to ambient thermal impedance.
11.2 Layout Example
VIA to Power Ground Plane
VOUT Bypass
Capacitor
VIN Bypass
Capacitor
VOUT
VIN
VOUT
VIN
VOUT
VIN
GND
ON
To GPIO
control
Figure 23. TPS22970 Package Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
TPS22970 Load Switch Evaluation Module
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
NanoFree is a trademark of Nanofree TM.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
16
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: TPS22970
TPS22970
www.ti.com
SLVSDF2A – MAY 2017 – REVISED JULY 2017
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
(1)
All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
(2)
This drawing is subject to change without notice.
(3)
NanoFree™ package configuration.
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: TPS22970
17
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22970YZPR
ACTIVE
DSBGA
YZP
8
3000
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 105
1CNI
TPS22970YZPT
ACTIVE
DSBGA
YZP
8
250
RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 105
1CNI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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