TPS28225-Q1
SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021
TPS28225-Q1 Automotive High-Frequency 4-A Sink Synchronous MOSFET Drivers
1 Features
3 Description
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The TPS28225-Q1 is a high-speed driver for Nchannel complementary driven power MOSFETs with
adaptive dead-time control. This driver is optimized
for use in variety of high-current, single and multiphase DC-to-DC converters. The TPS28225-Q1 is
highly efficient, has a small solution size and low-EMI
emissions.
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Qualified for automotive applications
Drives two N-channel MOSFETs with 14-ns
adaptive dead time
Wide gate drive voltage: 4.5 V up to 8.8 V with
best efficiency at 7 V to 8 V
Wide power system train input voltage: 3 V up to
27 V
Wide input PWM signals: 2-V up to 13.2-V
amplitude
Capable of driving MOSFETs with ≥40-A current
per phase
High frequency operation: 14-ns propagation delay
and 10-ns rise or fall time allows
FSW up to 2 MHz
Capable of propagating 160°C
EN/PG RISING
< 1.7 V
EN/PG FALLING > 1.0 V
PWM < 1 V
PWM > 1.5 V AND
TRISE/TFALL < 200 ns
PWM SIGNAL SOURCE IMPEDANCE
>40 kΩ FOR > 250 ns (3-STATE)(1)
LGATE
Low
Low
High
Low
Low
UGATE
Low
Low
Low
High
Low
EN/PG
Low
(1)
To exit the 3-state condition, the PWM signal should go low. One Low PWM input signal followed by one High PWM input signal is
required before re-entering the 3-state condition.
8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
To effect fast switching of power devices and reduce associated switching power losses, a powerful MOSFET
driver is employed between the PWM output of controllers and the gates of the power semiconductor devices.
Also, MOSFET drivers are indispensable when it is impossible for the PWM controller to directly drive the
MOSFETs of the switching devices. With the advent of digital power, this situation will be often encountered
because the PWM signal from the digital controller is often a 3.3-V logic signal which cannot effectively turn on
a power switch. Level shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as
12 V) in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits
based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter follower configurations, prove
inadequate with digital power because they lack level-shifting capability. MOSFET drivers effectively combine
both the level-shifting and buffer-drive functions.
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: TPS28225-Q1
15
TPS28225-Q1
www.ti.com
SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021
MOSFET drivers also find other needs such as minimizing the effect of high-frequency switching noise by
locating the high-current driver physically close to the power switch, driving gate-drive transformers and
controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving
gate charge power losses from the controller into the driver.
8.2 Typical Application
Figure 8-1, Figure 8-2, and Figure 8-3 illustrate typical implementations of the TPS28225-Q1 in step-down power
supplies.
V DD (4.5 V to 8 V)
V IN (3 V to 32 V − V DD)
6
VDD
BOOT 2
TPS28225-Q1
UGATE 1
TPS40200-Q1
3
VCC
3
OUT
3
FB
GND
3
3
PWM
PHASE 8
V OUT
7 ENBL
LGATE 5
GND 4
Copyright © 2016, Texas Instruments Incorporated
Figure 8-1. One-Phase POL Regulator
16
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Product Folder Links: TPS28225-Q1
TPS28225-Q1
www.ti.com
SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021
V DD (4.5 V to 8 V)
V IN (3 V to 32 V − VDD)
6 VDD
BOOT 2
TPS28225-Q1
UGATE 1
3 PWM
PHASE 8
7 EN/PG
LGATE 5
GND 4
PWM1 2
CS 1
To Controller
To Driver
TPS4009x-Q1
or any other analog
or digital controller
PWM2 1
VIN 8
To Driver
PWM3 8
6 VDD
BOOT 2
To Controller
TPS28225-Q1
PWM 4 5
UGATE 1
CS 4
CSCN
GND 4
GNDS
7
VOUT
3 PWM
PHASE 8
3
V OUT
7 EN /PG
Enable
LGATE 5
GND 4
Copyright © 2016, Texas Instruments Incorporated
Figure 8-2. Multi-Phase Synchronous Buck Converter
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Product Folder Links: TPS28225-Q1
17
TPS28225-Q1
www.ti.com
SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021
12 V
35 V to 75V
VOUT = 3.3 V
Primary High-Side
VDD High Voltage Driver
HB
LI
DRIVE
HI
C O N TR OL
HI
PWM
CONTROLLER
HO
LINEAR
REG.
HS
DRIVE
LO
LO
TPS28225-Q1
BOOT 2
6 VDD
VSS
ISOLATION
AND
FEEDBACK
VDD (4.5 V to 8 V)
UGATE 1
7 EN/PG PHASE 8
3 PWM
LGATE 5
GND 4
Copyright © 2016, Texas Instruments Incorporated
Figure 8-3. Driver for Synchronous Rectification with Complementary Driven MOSFETs
8.2.1 Design Requirements
The DC-DC converter in Figure 8-4 displays the schematic of the TPS28225 in a multiphase high-current
step-down power supply (only one phase is shown). This example schematic uses a single high-side MOSFET
and two low-side MOSFETs the latter connected in parallel. The TPS28225 is controlled by multiphase buck
DC/DC controller like TPS40090-Q1. As TPS28225 has internal shoot-through protection, only one PWM control
signal is required for each channel.
The VRM example schematic is capable of driving 35 A per phase. In this example it has a nominal input
voltage of 12 V within a tolerance range of ±5%. The switching frequency is 500 kHz. The nominal duty
cycle is 10%, therefore the low-side MOSFETs are conducting 90% of the time. By choosing lower RDS(on) the
conduction losses of the switching elements are minimized. The TPS28225 is controlled by multiphase buck
DC/DC controller like TPS40090-Q1.
Table 8-1. Design Parameters
18
DESIGN PARAMETER
VALUE
Supply Voltage
12 V ± 5%
Output Voltage
0.83 V to 1.6 V
Frequency
500 kHz
Efficiency
87%
Peak-to-peak voltage on load current (0 A –90 A )
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