TPS28225TDRQ1

TPS28225-Q1 SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021 TPS28225-Q1 Automotive High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 Features 3 Description • • The TPS28225-Q1 is a high-speed driver for Nchannel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multiphase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions. • • • • • • • • • • • • • • Qualified for automotive applications Drives two N-channel MOSFETs with 14-ns adaptive dead time Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V Wide power system train input voltage: 3 V up to 27 V Wide input PWM signals: 2-V up to 13.2-V amplitude Capable of driving MOSFETs with ≥40-A current per phase High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz Capable of propagating 160°C EN/PG RISING < 1.7 V EN/PG FALLING > 1.0 V PWM < 1 V PWM > 1.5 V AND TRISE/TFALL < 200 ns PWM SIGNAL SOURCE IMPEDANCE >40 kΩ FOR > 250 ns (3-STATE)(1) LGATE Low Low High Low Low UGATE Low Low Low High Low EN/PG Low (1) To exit the 3-state condition, the PWM signal should go low. One Low PWM input signal followed by one High PWM input signal is required before re-entering the 3-state condition. 8 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 8.1 Application Information To effect fast switching of power devices and reduce associated switching power losses, a powerful MOSFET driver is employed between the PWM output of controllers and the gates of the power semiconductor devices. Also, MOSFET drivers are indispensable when it is impossible for the PWM controller to directly drive the MOSFETs of the switching devices. With the advent of digital power, this situation will be often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal which cannot effectively turn on a power switch. Level shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate with digital power because they lack level-shifting capability. MOSFET drivers effectively combine both the level-shifting and buffer-drive functions. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TPS28225-Q1 15 TPS28225-Q1 www.ti.com SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021 MOSFET drivers also find other needs such as minimizing the effect of high-frequency switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses from the controller into the driver. 8.2 Typical Application Figure 8-1, Figure 8-2, and Figure 8-3 illustrate typical implementations of the TPS28225-Q1 in step-down power supplies. V DD (4.5 V to 8 V) V IN (3 V to 32 V − V DD) 6 VDD BOOT 2 TPS28225-Q1 UGATE 1 TPS40200-Q1 3 VCC 3 OUT 3 FB GND 3 3 PWM PHASE 8 V OUT 7 ENBL LGATE 5 GND 4 Copyright © 2016, Texas Instruments Incorporated Figure 8-1. One-Phase POL Regulator 16 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TPS28225-Q1 TPS28225-Q1 www.ti.com SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021 V DD (4.5 V to 8 V) V IN (3 V to 32 V − VDD) 6 VDD BOOT 2 TPS28225-Q1 UGATE 1 3 PWM PHASE 8 7 EN/PG LGATE 5 GND 4 PWM1 2 CS 1 To Controller To Driver TPS4009x-Q1 or any other analog or digital controller PWM2 1 VIN 8 To Driver PWM3 8 6 VDD BOOT 2 To Controller TPS28225-Q1 PWM 4 5 UGATE 1 CS 4 CSCN GND 4 GNDS 7 VOUT 3 PWM PHASE 8 3 V OUT 7 EN /PG Enable LGATE 5 GND 4 Copyright © 2016, Texas Instruments Incorporated Figure 8-2. Multi-Phase Synchronous Buck Converter Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TPS28225-Q1 17 TPS28225-Q1 www.ti.com SLUSAR9D – DECEMBER 2011 – REVISED DECEMBER 2021 12 V 35 V to 75V VOUT = 3.3 V Primary High-Side VDD High Voltage Driver HB LI DRIVE HI C O N TR OL HI PWM CONTROLLER HO LINEAR REG. HS DRIVE LO LO TPS28225-Q1 BOOT 2 6 VDD VSS ISOLATION AND FEEDBACK VDD (4.5 V to 8 V) UGATE 1 7 EN/PG PHASE 8 3 PWM LGATE 5 GND 4 Copyright © 2016, Texas Instruments Incorporated Figure 8-3. Driver for Synchronous Rectification with Complementary Driven MOSFETs 8.2.1 Design Requirements The DC-DC converter in Figure 8-4 displays the schematic of the TPS28225 in a multiphase high-current step-down power supply (only one phase is shown). This example schematic uses a single high-side MOSFET and two low-side MOSFETs the latter connected in parallel. The TPS28225 is controlled by multiphase buck DC/DC controller like TPS40090-Q1. As TPS28225 has internal shoot-through protection, only one PWM control signal is required for each channel. The VRM example schematic is capable of driving 35 A per phase. In this example it has a nominal input voltage of 12 V within a tolerance range of ±5%. The switching frequency is 500 kHz. The nominal duty cycle is 10%, therefore the low-side MOSFETs are conducting 90% of the time. By choosing lower RDS(on) the conduction losses of the switching elements are minimized. The TPS28225 is controlled by multiphase buck DC/DC controller like TPS40090-Q1. Table 8-1. Design Parameters 18 DESIGN PARAMETER VALUE Supply Voltage 12 V ± 5% Output Voltage 0.83 V to 1.6 V Frequency 500 kHz Efficiency 87% Peak-to-peak voltage on load current (0 A –90 A )