TPS54240-Q1
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
3.5-V to 42-V STEP-DOWN SWIFT™ DC/DC CONVERTER WITH Eco-mode™ CONTROL
SCHEME
Check for Samples: TPS54240-Q1
FEATURES
APPLICATIONS
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1
2
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Qualified for Automotive Applications
AEC Q100 Qualified With the Following
Results:
– Device Temperature Grade 1: –40°C to
125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C6
3.5-V to 42-V Input Voltage Range
200-mΩ High-Side MOSFET
High Efficiency at Light Loads With a PulseSkipping Eco-mode™ Control Scheme
138-μA Operating Quiescent Current
1.3-μA Shutdown Current
100-kHz to 2.5-MHz Switching Frequency
Synchronizes to External Clock
Adjustable Slow Start/Sequencing
UV and OV Power-Good Output
Adjustable UVLO Voltage and Hysteresis
0.8-V Internal Voltage Reference
MSOP10 PowerPAD™ Package
Supported by SwitcherPro™ Software Tool
(http://focus.ti.com/docs/toolsw/folders/print/s
witcherpro.html)
For SWIFT™ Documentation, See the TI Web
site at http://www.ti.com/swift
•
12-V and 24-V Industrial and Commercial LowPower Systems
GSM, GPRS Modules in Fleet Management, EMeters, and Security Systems
DESCRIPTION
The TPS54240-Q1 device is a 42-V, 2.5-A, stepdown regulator with an integrated high-side MOSFET.
Current-mode control provides simple external
compensation and flexible component selection. A
low-ripple pulse-skip mode reduces the no-load,
regulated-output supply current to 138 μA. Using the
enable pin, shutdown supply current is reduced to 1.3
μA when the enable pin is low.
Undervoltage lockout is internally set at 2.5 V, but
can be increased using the enable pin. The output
voltage start-up ramp is controlled by the slow-start
pin
that
can
also
be
configured
for
sequencing/tracking. An open-drain power-good
signal indicates the output is within 94% to 107% of
its nominal voltage.
A wide switching-frequency range allows efficiency
and external component size to be optimized.
Frequency foldback and thermal shutdown protects
the part during an overload condition.
The TPS54240-Q1 is available in a 10-pin thermally
enhanced MSOP PowerPAD package.
SIMPLIFIED SCHEMATIC
EFFICIENCY vs LOAD CURRENT
100
VIN
PWRGD
VIN
90
80
TPS54240
SS /TR
BOOT
PH
RT /CLK
V OUT
Efficiency - %
70
EN
60
50
40
30
VIN=12V
VOUT=3.3V
fsw=300kHz
20
COMP
VSENSE
10
0
GND
0
0.5
1.0
1.5
2.0
IO - Output Current - A
2.5
3.0
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Eco-mode, PowerPAD, SwitcherPro, SWIFT are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2013, Texas Instruments Incorporated
TPS54240-Q1
SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating temperature range (unless otherwise noted).
VALUE
VIN
EN
(2)
UNITS
MIN
MAX
–0.3
47
–0.3
5
BOOT
Input
voltage
55
VSENSE
–0.3
3
COMP
–0.3
3
PWRGD
–0.3
6
SS/TR
–0.3
3
RT/CLK
–0.3
3.6
–0.6
47
200 ns
–1
47
30 ns
–2
BOOT-PH
Output
voltage
PH
8
Maximum dc voltage, TJ = –40°C
Voltage
difference
Source
current
V
47
–0.85
PAD to GND
±200
mV
EN
100
μA
BOOT
100
mA
10
μA
VSENSE
Current
limit
PH
RT/CLK
100
μA
Current
limit
VIN
Sink current COMP
PWRGD
100
µA
10
mA
200
μA
Operating junction temperature
–40
150
°C
Storage temperature
–65
150
SS/TR
Electrostatic discharge (ESD) rating
(1)
(2)
Human-body model (HBM) AEC-Q100 Classification Level H2
Charged-device model (CDM) AEC-Q100 Classification Level C6
2
kV
1000
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
See the Enable and Adjusting Undervoltage Lockout section of this datasheet for details.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
TA
2
Operating ambient temperature
–40
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NOM
MAX
UNIT
125
°C
Copyright © 2010–2013, Texas Instruments Incorporated
Product Folder Links: TPS54240-Q1
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
THERMAL INFORMATION
TPS54240-Q1
THERMAL METRIC (1) (2)
DGQ
UNIT
10 PINS
θJA
Junction-to-ambient thermal resistance (standard board)
62.5
(3)
θJA
Junction-to-ambient thermal resistance (custom board)
θJCtop
Junction-to-case (top) thermal resistance
83
θJB
Junction-to-board thermal resistance
28
ψJT
Junction-to-top characterization parameter
1.7
ψJB
Junction-to-board characterization parameter
20.1
θJCbot
Junction-to-case (bottom) thermal resistance
21
(1)
(2)
(3)
57
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to increase substantially. See Power-Dissipation Estimate in the Application Information section of this data sheet for
more information.
Test board conditions:
(a) 3 in × 3 in (7,62 mm × 7,62 mm), 2 layers, thickness: 0.062 in (1,59 mm)
(b) 2-oz (0,071-mm thick) copper traces located on the top of the PCB
(c) 2-oz (0,071-mm thick) copper ground plane, bottom layer
(d) 6 13-mil (0,33-mm) thermal vias located under the device package
ELECTRICAL CHARACTERISTICS
TJ = –40°C to 150°C, VIN = 3.5 V to 42 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
3.5
42
Internal undervoltage lockout
threshold
No voltage hysteresis, rising and falling
2.5
Shutdown supply current
EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 42 V
1.3
4
Operating: nonswitching supply
current
VSENSE = 0.83 V, VIN = 12 V, 25°C
138
200
1.25
1.36
V
V
μA
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
Input current
No voltage hysteresis, rising and falling, 25°C
1.15
Enable threshold 50 mV
–3.8
Enable threshold –50 mV
–0.9
Hysteresis current
V
μA
μA
–2.9
VOLTAGE REFERENCE
Voltage reference
TJ = 25°C
0.792
0.8
0.808
0.784
0.8
0.816
V
HIGH-SIDE MOSFET
On-resistance
VIN = 3.5 V, BOOT-PH = 3 V
300
VIN = 12 V, BOOT-PH = 6 V
200
410
mΩ
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, VCOMP = 1 V
310
μMhos
Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, VCOMP = 1 V,
during slow start
VVSENSE = 0.4 V
70
μMhos
Error amplifier dc gain
VVSENSE = 0.8 V
Error amplifier bandwidth
Error amplifier source/sink
V(COMP) = 1 V, 100 mV overdrive
COMP to switch current
transconductance
10,000
V/V
2700
kHz
±27
μA
10.5
A/V
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 150°C, VIN = 3.5 V to 42 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
3.5
6.1
A
182
°C
CURRENT LIMIT
Current limit threshold
VIN = 12 V, TJ = 25°C
THERMAL SHUTDOWN
Thermal shutdown
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Switching-frequency range using RT
mode
fSW
Switching frequency
100
RT = 200 kΩ
450
Switching frequency range using
CLK mode
581
300
Minimum CLK input pulse duration
2500
kHz
720
kHz
2200
kHz
40
RT/CLK high threshold
1.9
RT/CLK low threshold
0.5
RT/CLK falling edge to PH rising
edge delay
Measured at 500 kHz with RT resistor in series
PLL lock-in time
Measured at 500 kHz
ns
2.2
V
0.7
V
60
ns
100
μs
2
μA
45
mV
SLOW START AND TRACKING (SS/TR)
Charge current
VSS/TR = 0.4 V
SS/TR-to-VSENSE matching
VSS/TR = 0.4 V
SS/TR-to-reference crossover
98% nominal
1.15
V
SS/TR discharge current (overload)
VSENSE = 0 V, V(SS/TR) = 0.4 V
382
μA
SS/TR discharge voltage
VSENSE = 0 V
54
mV
VSENSE falling
92%
POWER GOOD (PWRGD PIN)
VVSENSE
4
VSENSE threshold
VSENSE rising
94%
VSENSE rising
109%
VSENSE falling
107%
Hysteresis
VSENSE falling
2%
Output-high leakage
VSENSE = VREF, V(PWRGD) = 5.5 V, 25°C
10
On-resistance
I(PWRGD) = 3 mA, VSENSE < 0.79 V
50
Minimum VIN for defined output
V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA
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0.95
nA
Ω
1.5
V
Copyright © 2010–2013, Texas Instruments Incorporated
Product Folder Links: TPS54240-Q1
TPS54240-Q1
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
DEVICE INFORMATION
PIN CONFIGURATION
DGQ PACKAGE
(TOP VIEW)
DRC PACKAGE
(TOP VIEW)
BOOT
1
10
PH
VIN
2
9
GND
Thermal
Pad
(11)
BOOT
1
VIN
2
10
Thermal
Pad
(11)
PH
9
GND
8
COMP
8
COMP
EN
3
4
7
VSENSE
SS/TR
4
7
VSENSE
5
6
PWRGD
RT/CLK
5
6
PWRGD
EN
3
SS/TR
RT/CLK
PIN FUNCTIONS
PIN
I/O
DESCRIPTION
1
O
Connect a bootstrap capacitor between BOOT and PH. If the voltage on this mandatory capacitor is below
the minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
COMP
8
O
Error amplifier output, and input to the output switch current comparator. Connect frequency compensation
components to this pin.
EN
3
I
Enable pin, internal pullup current source. Pull below 1.2 V to disable. Float to enable. Adjust the input
undervoltage lockout with two resistors.
GND
9
–
Ground
PH
10
I
The source of the internal high-side power MOSFET
PWRGD
6
O
An open-drain output, asserts low if output voltage is low due to thermal shutdown, dropout, overvoltage or
EN shutdown.
NAME
NO.
BOOT
RT/CLK
5
I
Resistor timing and external clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper threshold,
a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and
the pin is a high-impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is reenabled and the mode returns to a resistor-set function.
SS/TR
4
I
Slow-start and tracking. An external capacitor connected to this pin sets the output rise time. Because the
voltage on this pin overrides the internal reference, it can be used for tracking and sequencing.
VIN
2
I
Input supply voltage, 3.5 V to 42 V
7
I
Inverting node of the transconductance (gm) error amplifier
(11)
–
GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.
VSENSE
Thermal pad
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
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FUNCTIONAL BLOCK DIAGRAM
PWRGD
6
EN
3
VIN
2
Shutdown
UV
Thermal
Shutdown
Enable
Comparator
Logic
UVLO
Shutdown
Shutdown
Logic
OV
Enable
Threshold
Boot
Charge
Voltage
Reference
Boot
UVLO
Minimum
Clamp
Pulse
Skip
ERROR
AMPLIFIER
PWM
Comparator
VSENSE 7
Current
Sense
1 BOOT
Logic
And
PWM Latch
SS/TR 4
Shutdown
Slope
Compensation
10 PH
COMP 8
11 POWERPAD
Frequency
Shift
Overload
Recovery
Maximum
Clamp
Oscillator
with PLL
TPS54240 Block Diagram
9 GND
5
RT/CLK
6
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
TYPICAL CHARACTERISTICS
VOLTAGE REFERENCE vs JUNCTION TEMPERATURE
0.816
500
VI = 12 V
VI = 12 V
375
Vref - Voltage Reference - V
RDSON - Static Drain-Source On-State Resistance - mW
ON-RESISTANCE vs JUNCTION TEMPERATURE
BOOT-PH = 3 V
250
BOOT-PH = 6 V
125
0
-50
0.808
0.800
0.792
0.784
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
-25
0
150
Figure 1.
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 2.
SWITCH CURRENT LIMIT vs JUNCTION TEMPERATURE
SWITCHING FREQUENCY vs JUNCTION TEMPERATURE
7.0
610
VI = 12 V,
RT = 200 kW
VI = 12 V
fs - Switching Frequency - kHz
600
Switch Current - A
6.5
6.0
5.5
590
580
570
560
5.0
-50
-25
0
25
50
75
100
125
550
-50
150
-25
0
TJ - Junction Temperature - °C
25
50
75
100
TJ - Junction Temperature - °C
150
Figure 3.
Figure 4.
SWITCHING FREQUENCY vs RT/CLK RESISTANCE, HIGHFREQUENCY RANGE
SWITCHING FREQUENCY vs RT/CLK RESISTANCE, LOWFREQUENCY RANGE
2500
500
VI = 12 V,
TJ = 25°C
2000
fs - Switching Frequency - kHz
fs - Switching Frequency - kHz
125
1500
1000
500
0
0
25
50
75
100
125
RT/CLK - Resistance - kW
150
175
200
VI = 12 V,
TJ = 25°C
400
300
200
100
0
200
300
Figure 5.
400
500
600 700
800
900
RT/CLK - Resistance - kW
1000 1100
1200
Figure 6.
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
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TYPICAL CHARACTERISTICS (continued)
EA TRANSCONDUCTANCE DURING SLOW START vs
JUNCTION TEMPERATURE
EA TRANSCONDUCTANCE vs JUNCTION TEMPERATURE
500
120
VI = 12 V
VI = 12 V
450
100
gm - mA/V
gm - mA/V
400
80
60
350
300
40
20
-50
250
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
200
-50
150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 7.
Figure 8.
EN PIN VOLTAGE vs JUNCTION TEMPERATURE
EN PIN CURRENT vs JUNCTION TEMPERATURE
1.40
-3.25
VI = 12 V,
VI(EN) = Threshold +50 mV
VI = 12 V
-3.5
I(EN) - mA
EN - Threshold - V
1.30
-3.75
1.20
-4
1.10
-50
-25
0
25
50
75
100
125
150
-4.25
-50
50
75
100
125
150
Figure 10.
EN PIN CURRENT vs JUNCTION TEMPERATURE
SS/TR CHARGE CURRENT vs JUNCTION TEMPERATURE
-1
VI = 12 V
-0.85
-1.5
I(SS/TR) - mA
I(EN) - mA
25
Figure 9.
VI = 12 V,
VI(EN) = Threshold -50 mV
-0.9
-0.95
-2
-2.5
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
-3
-50
-25
Figure 11.
8
0
TJ - Junction Temperature - °C
-0.8
-1
-50
-25
TJ - Junction Temperature - °C
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 12.
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
TYPICAL CHARACTERISTICS (continued)
SS/TR DISCHARGE CURRENT vs JUNCTION
TEMPERATURE
SWITCHING FREQUENCY vs VSENSE
575
100
VI = 12 V,
TJ = 25°C
VI = 12 V
80
% of Nominal fsw
II(SS/TR) - mA
500
425
350
275
60
40
20
200
-50
0
0
50
100
TJ - Junction Temperature - °C
150
0
0.8
SHUTDOWN SUPPLY CURRENT vs JUNCTION
TEMPERATURE
SHUTDOWN SUPPLY CURRENT vs INPUT VOLTAGE (VIN)
2
TJ = 25°C
1.5
1.5
I(VIN) - mA
I(VIN) - mA
0.6
Figure 14.
VI = 12 V
1
0.5
1
0.5
0
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
0
10
Figure 15.
20
VI - Input Voltage - V
30
40
Figure 16.
VIN SUPPLY CURRENT vs JUNCTION TEMPERATURE
VIN SUPPLY CURRENT vs INPUT VOLTAGE
210
190
0.4
VSENSE - V
Figure 13.
2
0
-50
0.2
170
VI = 12 V,
VI(VSENSE) = 0.83 V
TJ = 25oC,
VI(VSENSE) = 0.83 V
170
I(VIN) - mA
I(VIN) - mA
150
150
130
130
110
90
70
-50
110
0
50
100
TJ - Junction Temperature - °C
150
0
Figure 17.
20
VI - Input Voltage - V
40
Figure 18.
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TYPICAL CHARACTERISTICS (continued)
PWRGD ON-RESISTANCE vs JUNCTION TEMPERATURE
PWRGD THRESHOLD vs JUNCTION TEMPERATURE
115
100
VI = 12 V
PWRGD Threshold - % of Vref
VI = 12 V
RDSON - W
80
60
40
20
VSENSE Rising
110
VSENSE Falling
105
100
VSENSE Rising
95
VSENSE Falling
90
0
-50
-25
0
25
50
75
125
100
85
-50
150
-25
0
25
50
75
100
TJ - Junction Temperature - °C
BOOT-PH UVLO vs JUNCTION TEMPERATURE
INPUT VOLTAGE (UVLO) vs JUNCTION TEMPERATURE
2.5
3
2.3
2.75
2
2.50
2.25
1.5
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
2
-50
150
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 21.
125
150
Figure 22.
SS/TR-TO-VSENSE OFFSET vs VSENSE
SS/TR-TO-VSENSE OFFSET vs TEMPERATURE
600
60
VIN = 12 V
TJ = 25°C
500
50
V(SS/TR) = 0.4 V
VI = 12 V
40
400
Offset - mV
Offset Voltage Threshold (mV)
150
Figure 20.
1.8
300
30
20
200
10
100
0
-50
0
0
10
125
Figure 19.
VI(VIN) - V
VI(BOOT-PH) - V
TJ - Junction Temperature - °C
200
400
600
Voltage Sense (mV)
Figure 23.
-25
800
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0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 24.
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
OVERVIEW
The TPS54240-Q1 device is a 42-V, 2.5-A, step-down (buck) regulator with an integrated high-side n-channel
MOSFET. To improve performance during line and load transients, the device implements a constant-frequency,
current-mode control which reduces output capacitance and simplifies external frequency compensation design.
The wide switching frequency of 100 kHz to 2500 kHz allows for efficiency and size optimization when selecting
the output-filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin.
The device has an internal phase-lock loop (PLL) on the RT/CLK pin that is used to synchronize the power
switch turnon to a falling edge of an external system clock.
The TPS54240-Q1 has a default start-up voltage of approximately 2.5 V. The EN pin has an internal pullup
current source that is used to adjust the input undervoltage lockout (UVLO) threshold with two external resistors.
In addition, the pullup current provides a default condition. When the EN pin is floating the device operates. The
operating current is 138 μA when not switching and under no load. When the device is disabled, the supply
current is 1.3 μA.
The integrated 200-mΩ high-side MOSFET allows for high-efficiency power-supply designs capable of delivering
2.5 A of continuous current to a load. The TPS54240-Q1 reduces the external component count by integrating
the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by a capacitor
between the BOOT and PH pins. The boot capacitor voltage is monitored by a UVLO circuit and turns the highside MOSFET off when the boot voltage falls below a preset threshold. The TPS54240-Q1 operates at high duty
cycles because of the boot UVLO. The output voltage can be stepped down to as low as the 0.8 V reference.
The TPS54240-Q1 has a power-good comparator (PWRGD) which asserts when the regulated output voltage is
less than 92% or greater than 109% of the nominal output voltage. The PWRGD pin is an open-drain output
which deasserts when the VSENSE pin voltage is between 94% and 107% of the nominal output voltage,
allowing the pin to transition high when a pullup resistor is used.
The TPS54240-Q1 minimizes excessive output overvoltage (OV) transients by taking advantage of the OV
power-good comparator. When the OV comparator is activated, the high-side MOSFET is turned off and masked
from turning on until the output voltage is lower than 107%.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power-supply sequencing
during power up. A small-value capacitor should be coupled to the pin to adjust the slow-start time. A resistor
divider can be coupled to the pin for critical power-supply sequencing requirements. The SS/TR pin is discharged
before the output powers up. This discharging ensures a repeatable restart after an overtemperature fault, UVLO
fault or a disabled condition.
The TPS54240-Q1 also discharges the slow-start capacitor during overload conditions with an overload recovery
circuit. The overload recovery circuit slow-starts the output from the fault voltage to the nominal regulation
voltage once a fault condition is removed. A frequency foldback circuit reduces the switching frequency during
startup and overcurrent fault conditions to help control the inductor current.
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DETAILED DESCRIPTION
Fixed-Frequency PWM Control
The TPS54240-Q1 uses an adjustable fixed-frequency, peak-current-mode control. The output voltage is
compared through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier
which drives the COMP pin. An internal oscillator initiates the turnon of the high-side power switch. The error
amplifier output is compared to the high-side power-switch current. When the power-switch current reaches the
level set by the COMP voltage, the power switch is turned off. The COMP pin voltage increases and decreases
as the output current increases and decreases. The device implements a current limit by clamping the COMP pin
voltage to a maximum level. The Eco-mode™ control scheme is implemented with a minimum clamp on the
COMP pin.
Slope Compensation Output Current
The TPS54240-Q1 adds a compensating ramp to the switch-current signal. This slope compensation prevents
sub-harmonic oscillations. The available peak inductor current remains constant over the full duty cycle range.
Pulse-Skip Eco-mode Control Scheme
The TPS54240-Q1 operates in a pulse-skip Eco-mode at light load currents to improve efficiency by reducing
switching and gate drive losses. The TPS54240-Q1 is designed so that if the output voltage is within regulation
and the peak switch current at the end of any switching cycle is below the pulse skipping current threshold, the
device enters Eco-mode. This current threshold is the current level corresponding to a nominal COMP voltage or
500 mV.
When in Eco-mode, the COMP pin voltage is clamped at 500 mV and the high-side MOSFET is inhibited. Further
decreases in load current or in output voltage cannot drive the COMP pin below this clamp voltage level.
Because the device is not switching, the output voltage begins to decay. As the voltage control loop
compensates for the falling output voltage, the COMP pin voltage begins to rise. At this time, the high-side
MOSFET is enabled and a switching pulse initiates on the next switching cycle. The peak current is set by the
COMP pin voltage. The output voltage recharges the regulated value, then the peak switch current starts to
decrease, and eventually falls below the Eco-mode threshold, at which time the device again enters Eco-mode.
For Eco-mode operation, the TPS54240-Q1 senses peak current, not average or load current, so the load
current where the device enters Eco-mode is dependent on the output inductor value. For example, the circuit in
Figure 50 enters Eco-mode at about 5 mA of output current. When the load current is low and the output voltage
is within regulation, the device enters a sleep mode and draws only 138 μA of input quiescent current. The
internal PLL remains operating when in sleep mode. When operating at light load currents in the pulse-skip
mode, the switching transitions occur synchronously with the external clock signal.
Low-Dropout Operation and Bootstrap Voltage (BOOT)
The TPS54240-Q1 has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT
and PH pins to provide the gate-drive voltage for the high-side MOSFET. The BOOT capacitor is refreshed when
the high-side MOSFET is off and the low-side diode conducts. The value of this ceramic capacitor should be 0.1
μF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher is
recommended because of the stable characteristics over temperature and voltage.
To improve dropout, the TPS54240-Q1 is designed to operate at 100% duty cycle as long as the BOOT-to-PH
pin voltage is greater than 2.1 V. When the voltage from BOOT to PH drops below 2.1 V, the high-side MOSFET
is turned off using an UVLO circuit, which allows the low side diode to conduct and refresh the charge on the
BOOT capacitor. Because the supply current sourced from the BOOT capacitor is low, the high-side MOSFET
can remain on for more switching cycles than are required to refresh the capacitor; thus, the effective duty cycle
of the switching regulator is high.
The effective duty cycle during dropout of the regulator is mainly influenced by the voltage drops across the
power MOSFET, inductor resistance, low-side diode, and printed circuit board resistance. During operating
conditions in which the input voltage drops and the regulator is operating in continuous-conduction mode, the
high-side MOSFET can remain on for 100% of the duty cycle to maintain output regulation, until the BOOT- to
PH-voltage falls below 2.1 V.
12
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DETAILED DESCRIPTION (continued)
Attention must be taken in maximum-duty-cycle applications which experience extended time periods with light
loads or no load. When the voltage across the BOOT capacitor falls below the 2.1-V UVLO threshold, the highside MOSFET is turned off, but there may not be enough inductor current to pull the PH pin down to recharge the
BOOT capacitor. The high-side MOSFET of the regulator stops switching because the voltage across the BOOT
capacitor is less than 2.1 V. The output capacitor then decays until the difference in the input voltage and output
voltage is greater than 2.1 V, at which point the BOOT UVLO threshold is exceeded, and the device starts
switching again until the desired output voltage is reached. This operating condition persists until the input
voltage and/or the load current increases. TI recommends to adjust the VIN stop voltage greater than the BOOT
UVLO trigger condition at the minimum load of the application using the adjustable VIN UVLO feature with
resistors on the EN pin.
The start and stop voltages for typical 3.3-V and 5-V output applications are shown in Figure 25 and Figure 26.
The voltages are plotted versus load current. The start voltage is defined as the input voltage needed to regulate
the output within 1%. The stop voltage is defined as the input voltage at which the output drops by 5% or stops
switching.
During high-duty-cycle conditions, the inductor current ripple increases while the BOOT capacitor is being
recharged, resulting in an increase in ripple voltage on the output. This is due to the recharge time of the boot
capacitor being longer than the typical high-side off-time, when switching occurs every cycle.
4
5.6
VO = 3.3 V
VO = 5 V
5.4
VI - Input Voltage - V
VI - Input Voltage - V
3.8
3.6
Start
3.4
Stop
3.2
5.2
Start
5
Stop
4.8
3
4.6
0
0.05
0.10
IO - Output Current - A
0.15
0.20
Figure 25. 3.3-V Start/Stop Voltage
0
0.05
0.10
IO - Output Current - A
0.15
0.20
Figure 26. 5-V Start/Stop Voltage
Error Amplifier
The TPS54240-Q1 has a transconductance amplifier for the error amplifier. The error amplifier compares the
VSENSE voltage to the lower of the SS/TR pin voltage or the internal 0.8-V voltage reference. The
transconductance (gm) of the error amplifier is 310 μA/V during normal operation. During the slow-start operation,
the transconductance is a fraction of the normal operating gm. When the voltage of the VSENSE pin is below 0.8
V and the device is regulating using the SS/TR voltage, the gm is 70 μA/V.
The frequency-compensation components (capacitor, series resistor, and capacitor) are added from the COMP
pin to ground.
Voltage Reference
The voltage reference system produces a precise ±2% voltage reference over temperature by scaling the output
of a temperature-stable band-gap circuit.
Adjusting the Output Voltage
The output voltage is set with a resistor divider from the output node to the VSENSE pin. TI recommends to use
1% tolerance or better divider resistors. Start with 10 kΩ for the R2 resistor and use Equation 1 to calculate R1.
To improve efficiency at light loads, consider using larger-value resistors. If the values are too high, the regulator
is more susceptible to noise, and voltage errors from the VSENSE input current are noticeable.
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DETAILED DESCRIPTION (continued)
æ Vout - 0.8V ö
R1 = R2 ´ ç
÷
0.8 V
è
ø
(1)
Enable and Adjusting Undervoltage Lockout
The TPS54240-Q1 is disabled when the VIN pin voltage falls below 2.5 V. If an application requires a higher
undervoltage lockout (UVLO), use the EN pin as shown in Figure 27 to adjust the input voltage UVLO by using
the two external resistors. Though it is not necessary to use the UVLO adjust registers, for operation it is highly
recommended to provide consistent power-up behavior. The EN pin has an internal pullup current source, I1, of
0.9 μA that provides the default condition of the TPS54240-Q1 operating when the EN pin floats. Once the EN
pin voltage exceeds 1.25 V, an additional 2.9 μA of hysteresis, Ihys, is added. This additional current facilitates
input voltage hysteresis. Use Equation 2 to set the external hysteresis for the input voltage. Use Equation 3 to
set the input start voltage.
TPS54240
VIN
Ihys
I1
0.9 mA
R1
2.9 mA
+
R2
EN
-
1.25 V
Figure 27. Adjustable Undervoltage Lockout (UVLO)
V
- VSTOP
R1 = START
IHYS
R2 =
(2)
VENA
VSTART - VENA
+ I1
R1
(3)
Another technique to add input voltage hysteresis is shown in Figure 28. This method may be used if the
resistance values are high from the previous method and a wider voltage hysteresis is needed. Resistor R3
sources additional hysteresis current into the EN pin.
TPS54240
VIN
R1
Ihys
I1
0.9 mA
2.9 mA
+
R2
EN
1.25 V
R3
-
VOUT
Figure 28. Adding Additional Hysteresis
14
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DETAILED DESCRIPTION (continued)
R1 =
R2 =
VSTART - VSTOP
V
IHYS + OUT
R3
(4)
VENA
VSTART - VENA
V
+ I1 - ENA
R1
R3
(5)
Do not place a low-impedance voltage source with greater than 5 V directly on the EN pin. Do not place a
capacitor directly on the EN pin if VEN > 5 V when using a voltage divider to adjust the start and stop voltage.
The node voltage, (see Figure 29) must remain equal to or less than 5.8 V. The Zener diode can sink up to 100
µA. The EN pin voltage can be greater than 5 V if the VIN voltage source has a high impedance and does not
source more than 100 µA into the EN pin.
VIN
R1
Node
ENA
10kohm
R2
5.8V
Figure 29. Node Voltage
Slow Start/Tracking Pin (SS/TR)
The TPS54240-Q1 effectively uses the lower voltage of the internal voltage reference or the SS/TR pin voltage
as the power-supply reference voltage and regulates the output accordingly. A capacitor on the SS/TR pin to
ground implements a slow-start time. The TPS54240-Q1 has an internal pullup current source of 2 μA that
charges the external slow-start capacitor. The calculations for the slow-start time (10% to 90%) are shown in
Equation 6. The voltage reference (VREF) is 0.8 V and the slow-start current (ISS) is 2 μA. The slow-start capacitor
should remain lower than 0.47 μF and greater than 0.47 nF.
Tss(ms) ´ Iss(m A)
Css(nF) =
Vref (V) ´ 0.8
(6)
At power up, the TPS54240-Q1 does not start switching until the slow start pin is discharged to less than 40 mV
to ensure a proper power up, see Figure 30.
Also, during normal operation, the TPS54240-Q1 stops switching and the SS/TR must be discharged to 40 mV,
when the VIN UVLO is exceeded, EN pin pulled below 1.25 V, or a thermal shutdown event occurs.
The VSENSE voltage follows the SS/TR pin voltage with a 45 mV offset up to 85% of the internal voltage
reference. When the SS/TR voltage is greater than 85% on the internal reference voltage the offset increases as
the effective system reference transitions from the SS/TR voltage to the internal voltage reference (see
Figure 23). The SS/TR voltage ramps linearly until clamped at 1.7 V.
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DETAILED DESCRIPTION (continued)
EN
SS/TR
VSENSE
VOUT
Figure 30. Operation of SS/TR Pin When Starting
Overload Recovery Circuit
The TPS54240-Q1 has an overload recovery (OLR) circuit. The OLR circuit slow starts the output from the
overload voltage to the nominal regulation voltage once the fault condition is removed. The OLR circuit
discharges the SS/TR pin to a voltage slightly greater than the VSENSE pin voltage using an internal pull down
of 382 μA when the error amplifier is changed to a high voltage from a fault condition. When the fault condition is
removed, the output slow starts from the fault voltage to nominal output voltage.
Sequencing
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD
pins. The sequential method can be implemented using an open drain output of a power on reset pin of another
device. The sequential method is illustrated in Figure 31 using two TPS54240-Q1 devices. The power good is
coupled to the EN pin on the TPS54240-Q1 which enables the second power supply once the primary supply
reaches regulation. If needed, a 1nF ceramic capacitor on the EN pin of the second power supply provides a 1ms start-up delay. Figure 32 shows the results of Figure 31.
16
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DETAILED DESCRIPTION (continued)
TPS54240
EN
PWRGD
EN
EN1
SS /TR
SS /TR
PWRGD1
PWRGD
VOUT1
VOUT2
Figure 31. Schematic for Sequential Start-Up
Sequence
Figure 32. Sequential Startup using EN and
PWRGD
TPS54160
TPS54240
3
EN
4
SS/TR
6
PWRGD
EN1, EN2
VOUT1
TPS54240
TPS54160
VOUT2
3
EN
4
SS/TR
6
PWRGD
Figure 33. Schematic for Ratiometric Startup Using
Coupled SS/TR Pins
Figure 34. RatioMetric Startup Using Coupled
SS/TR pins
Figure 33 shows a method for ratiometric startup sequence by connecting the SS/TR pins together. The regulator
outputs ramps up and reaches regulation at the same time. When calculating the slow start time the pull up
current source must be doubled in Equation 6. Figure 34 shows the results of Figure 33.
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DETAILED DESCRIPTION (continued)
TPS54240
EN
VOUT 1
SS/TR
PWRGD
TPS54240
VOUT 2
EN
R1
SS/ TR
R2
PWRGD
R3
R4
Figure 35. Schematic for Ratiometric and Simultaneous Start-Up Sequence
Ratiometric and simultaneous power supply sequencing is implemented by connecting the resistor network of R1
and R2 shown in Figure 35 to the output of the power supply that needs to be tracked or another voltage
reference source. Using Equation 7 and Equation 8, the tracking resistors can be calculated to initiate the Vout2
slightly before, after or at the same time as Vout1. Equation 9 is the voltage difference between Vout1 and Vout2
at the 95% of nominal output regulation.
The deltaV variable is zero volts for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (Vssoffset) in the slow start circuit and the offset created by the pullup current source (Iss) and
tracking resistors, the Vssoffset and Iss are included as variables in the equations.
To design a ratio-metric start up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2
reaches regulation, use a negative number in Equation 7 through Equation 9 for deltaV. Equation 9 results in a
positive number for applications which the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved.
Because the SS/TR pin must be pulled below 40mV before starting after an EN, UVLO or thermal shutdown
fault, careful selection of the tracking resistors is needed to ensure the device restarts after a fault. Make sure the
calculated R1 value from Equation 7 is greater than the value calculated in Equation 10 to ensure the device can
recover from a fault.
As the SS/TR voltage becomes more than 85% of the nominal reference voltage the Vssoffset becomes larger
as the slow start circuits gradually handoff the regulation reference to the internal voltage reference. The SS/TR
pin voltage needs to be greater than 1.3 V for a complete handoff to the internal voltage reference as shown in
Figure 23.
Vout2 + deltaV
Vssoffset
R1 =
´
VREF
Iss
(7)
VREF ´ R1
R2 =
Vout2 + deltaV - VREF
(8)
deltaV = Vout1 - Vout2
(9)
R1 > 2800 ´ Vout1 - 180 ´ deltaV
(10)
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DETAILED DESCRIPTION (continued)
EN
EN
VOUT1
VOUT1
VOUT2
Figure 36. Ratiometric Startup With VOUT2
Leading VOUT1
VOUT2
Figure 37. Ratiometric Startup With VOUT1
Leading VOUT2
EN
VOUT1
VOUT2
Figure 38. Simultaneous Startup With Tracking Resistor
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DETAILED DESCRIPTION (continued)
Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
The switching frequency of the TPS54240-Q1 is adjustable over a wide range from approximately 100 kHz to
2500 kHz by placing a resistor on the RT/CLK pin. The RT/CLK pin voltage is typically 0.5 V and must have a
resistor to ground to set the switching frequency. To determine the timing resistance for a given switching
frequency, use Equation 11 or the curves in Figure 39 or Figure 40. To reduce the solution size one would
typically set the switching frequency as high as possible, but tradeoffs of the supply efficiency, maximum input
voltage and minimum controllable on time should be considered.
The minimum controllable on time is typically 135 ns and limits the maximum operating input voltage.
The maximum switching frequency is also limited by the frequency shift circuit. More discussion on the details of
the maximum switching frequency is located below.
206033
RT (kOhm ) =
¦ sw (kHz )1.0888
(11)
SWITCHING FREQUENCY
vs
RT/CLK RESISTANCE HIGH FREQUENCY RANGE
SWITCHING FREQUENCY
vs
RT/CLK RESISTANCE LOW FREQUENCY RANGE
2500
500
2000
fs - Switching Frequency - kHz
fs - Switching Frequency - kHz
VI = 12 V,
TJ = 25°C
1500
1000
500
0
0
25
50
75
100
125
150
RT/CLK - Clock Resistance - kW
175
200
VI = 12 V,
TJ = 25°C
400
300
200
100
0
200
300
Figure 39. High-Range RT
400
500
600 700
800
900
RT/CLK - Resistance - kW
1000 1100
1200
Figure 40. Low-Range RT
Overcurrent Protection and Frequency Shift
The TPS54240-Q1 implements current mode control which uses the COMP pin voltage to turn off the high side
MOSFET on a cycle by cycle basis. Each cycle the switch current and COMP pin voltage are compared, when
the peak switch current intersects the COMP voltage, the high side switch is turned off. During overcurrent
conditions that pull the output voltage low, the error amplifier responds by driving the COMP pin high, increasing
the switch current. The error amplifier output is clamped internally, which functions as a switch current limit.
To increase the maximum operating switching frequency at high input voltages the TPS54240-Q1 implements a
frequency shift. The switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 V on
VSENSE pin.
The device implements a digital frequency shift to enable synchronizing to an external clock during normal
startup and fault conditions. Because the device can only divide the switching frequency by 8, there is a
maximum input voltage limit in which the device operates and still have frequency shift protection.
During short-circuit events (particularly with high input voltage applications), the control loop has a finite minimum
controllable on time and the output has a low voltage. During the switch on time, the inductor current ramps to
the peak current limit because of the high input voltage and minimum on time. During the switch off time, the
inductor would normally not have enough off time and output voltage for the inductor to ramp down by the ramp
up amount. The frequency shift effectively increases the off time allowing the current to ramp down.
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DETAILED DESCRIPTION (continued)
Selecting the Switching Frequency
The switching frequency that is selected should be the lower value of the two equations, Equation 12 and
Equation 13. Equation 12 is the maximum switching frequency limitation set by the minimum controllable on time.
Setting the switching frequency above this value causes the regulator to skip switching pulses.
Equation 13 is the maximum switching frequency limit set by the frequency shift protection. To have adequate
output short circuit protection at high input voltages, the switching frequency should be set to be less than the
fsw(maxshift) frequency. In Equation 13, to calculate the maximum switching frequency one must take into
account that the output voltage decreases from the nominal voltage to 0 V, the ƒdiv integer increases from 1 to 8
corresponding to the frequency shift.
In Figure 41, the solid line illustrates a typical safe operating area regarding frequency shift and assumes the
output voltage is zero volts, and the resistance of the inductor is 0.13 Ω, FET on resistance of 0.2 Ω and the
diode voltage drop is 0.5 V. The dashed line is the maximum switching frequency to avoid pulse skipping. Enter
these equations in a spreadsheet or other software or use the SwitcherPro design software to determine the
switching frequency.
æ 1 ö æ (IL ´ Rdc + VOUT + Vd) ö
fSW (max skip ) = ç
÷
÷ ´ çç
÷
è tON ø è (VIN - IL ´ Rhs + Vd) ø
(12)
fSW (shift ) =
fdiv æ (IL ´ Rdc + VOUTSC + Vd) ö
´ç
÷
tON çè (VIN - IL x Rhs + Vd) ÷ø
(13)
IL
inductor current
Rdc
inductor resistance
VIN
maximum input voltage
VOUT
output voltage
VOUTSC
output voltage during short
Vd
diode voltage drop
RDS(on)
switch on resistance
tON
controllable on time
ƒDIV
frequency divide equals (1, 2, 4, or 8)
2500
fs - Switching Frequency - kHz
VO = 3.3 V
2000
Shift
1500
Skip
1000
500
0
10
20
30
VI - Input Voltage - V
40
Figure 41. Maximum Switching Frequency Versus Input Voltage
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DETAILED DESCRIPTION (continued)
How to Interface to RT/CLK Pin
The RT/CLK pin is used to synchronize the regulator to an external system clock. To implement the
synchronization feature connect a square wave to the RT/CLK pin through the circuit network shown in
Figure 42. The square wave amplitude must transition lower than 0.5 V and higher than 2.2 V on the RT/CLK pin
and have an on time greater than 40 ns and an off time greater than 40 ns. The synchronization frequency range
is 300 kHz to 2200 kHz. The rising edge of the PH is synchronized to the falling edge of RT/CLK pin signal. The
external synchronization circuit should be designed in such a way that the device has the default frequency set
resistor connected from the RT/CLK pin to ground should the synchronization signal turn off. TI recommends to
use a frequency set resistor connected as shown in Figure 42 through a 50-Ω resistor to ground. The resistor
should set the switching frequency close to the external CLK frequency. TI recommends to ac couple the
synchronization signal through a 10-pF ceramic capacitor to RT/CLK pin and a 4kΩ series resistor. The series
resistor reduces PH jitter in heavy load applications when synchronizing to an external clock and in applications
which transition from synchronizing to RT mode. The first time the CLK is pulled above the CLK threshold the
device switches from the RT resistor frequency to PLL mode. The internal 0.5-V voltage source is removed and
the CLK pin becomes high impedance as the PLL starts to lock onto the external signal. Because there is a PLL
on the regulator the switching frequency can be higher or lower than the frequency set with the external resistor.
The device transitions from the resistor mode to the PLL mode and then increases or decreases the switching
frequency until the PLL locks onto the CLK frequency within 100 ms.
When the device transitions from the PLL to resistor mode the switching frequency slows down from the CLK
frequency to 150 kHz, then reapply the 0.5-V voltage and the resistor then sets the switching frequency. The
switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 V on VSENSE pin. The device
implements a digital frequency shift to enable synchronizing to an external clock during normal startup and fault
conditions. Figure 43, Figure 44 and Figure 45 show the device synchronized to an external system clock in
continuous conduction mode (CCM) discontinuous conduction (DCM) and pulse skip mode (psm).
TPS54240
10 pF
4 kW
PLL
Rfset
EXT
Clock
Source
50 W
RT/CLK
Figure 42. Synchronizing to a System Clock
22
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DETAILED DESCRIPTION (continued)
PH
PH
EXT
EXT
IL
IL
Figure 43. Plot of Synchronizing in CCM
Figure 44. Plot of Synchronizing in DCM
PH
EXT
IL
Figure 45. Plot of Synchronizing in PSM
Power Good (PWRGD Pin)
The PWRGD pin is an open drain output. Once the VSENSE pin is between 94% and 107% of the internal
voltage reference the PWRGD pin is de-asserted and the pin floats. TI recommends to use a pull-up resistor
between the values of 1 kΩ and 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD is in a defined
state once the VIN input voltage is greater than 1.5 V but with reduced current sinking capability. The PWRGD
achieves full current sinking capability as VIN input voltage approaches 3 V.
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DETAILED DESCRIPTION (continued)
The PWRGD pin is pulled low when the VSENSE is lower than 92% or greater than 109% of the nominal internal
reference voltage. Also, the PWRGD is pulled low, if the UVLO or thermal shutdown are asserted or the EN pin
pulled low.
Overvoltage Transient Protection
The TPS54240-Q1 incorporates an overvoltage transient protection (OVTP) circuit to minimize voltage overshoot
when recovering from output fault conditions or strong unload transients on power supply designs with low value
output capacitance. For example, when the power supply output is overloaded the error amplifier compares the
actual output voltage to the internal reference voltage. If the VSENSE pin voltage is lower than the internal
reference voltage for a considerable time, the output of the error amplifier responds by clamping the error
amplifier output to a high voltage. Thus, requesting the maximum output current. Once the condition is removed,
the regulator output rises and the error amplifier output transitions to the steady state duty cycle. In some
applications, the power supply output voltage can respond faster than the error amplifier output can respond, this
actuality leads to the possibility of an output overshoot. The OVTP feature minimizes the output overshoot, when
using a low value output capacitor, by implementing a circuit to compare the VSENSE pin voltage to OVTP
threshold which is 109% of the internal voltage reference. If the VSENSE pin voltage is greater than the OVTP
threshold, the high side MOSFET is disabled preventing current from flowing to the output and minimizing output
overshoot. When the VSENSE voltage drops lower than the OVTP threshold, the high side MOSFET is allowed
to turn on at the next clock cycle.
Thermal Shutdown
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 182°C.
The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal
trip threshold. Once the die temperature decreases below 182°C, the device reinitiates the power up sequence
by discharging the SS/TR pin.
Small Signal Model for Loop Response
Figure 46 shows an equivalent model for the TPS54240-Q1 control loop which can be modeled in a circuit
simulation program to check frequency response and dynamic load response. The error amplifier is a
transconductance amplifier with a gmEA of 310 μA/V. The error amplifier can be modeled using an ideal voltage
controlled current source. The resistor Ro and capacitor Co model the open loop gain and frequency response of
the amplifier. The 1-mV ac voltage source between the nodes a and b effectively breaks the control loop for the
frequency response measurements. Plotting c/a shows the small signal response of the frequency compensation.
Plotting a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by
replacing RL with a current source with the appropriate load step amplitude and step rate in a time domain
analysis. This equivalent model is only valid for continuous conduction mode designs.
24
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DETAILED DESCRIPTION (continued)
PH
VO
Power Stage
gmps 10.5 A/V
a
b
RESR
R1
RL
COMP
c
0.8 V
CO
R3
RO
COUT
VSENSE
gmea
C2
R2
350 mA/V
C1
Figure 46. Small-Signal Model for Loop Response
Simple Small Signal Model for Peak Current Mode Control
Figure 47 describes a simple small signal model that can be used to understand how to design the frequency
compensation. The TPS54240-Q1 power stage is approximated to a voltage-controlled current source (duty cycle
modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is
shown in Equation 14 and consists of a dc gain, one dominant pole, and one ESR zero. The quotient of the
change in switch current and the change in COMP pin voltage (node c in Figure 46) is the power stage
transconductance. The gmPS for the TPS54240-Q1 is 10.5 A/V. The low-frequency gain of the power stage
frequency response is the product of the transconductance and the load resistance as shown in Equation 15.
As the load current increases and decreases, the low-frequency gain decreases and increases, respectively. This
variation with the load may seem problematic at first glance, but fortunately the dominant pole moves with the
load current (see Equation 16). The combined effect is highlighted by the dashed line in the right half of
Figure 47. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB
crossover frequency the same for the varying load conditions which makes it easier to design the frequency
compensation. The type of output capacitor chosen determines whether the ESR zero has a profound effect on
the frequency compensation design. Using high ESR aluminum electrolytic capacitors may reduce the number
frequency compensation components needed to stabilize the overall loop because the phase margin increases
from the ESR zero at the lower frequencies (see Equation 17).
VO
Adc
VC
RESR
fp
RL
gmps
COUT
fz
Figure 47. Simple Small-Signal Model and Frequency Response for Peak Current-Mode Control
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DETAILED DESCRIPTION (continued)
æ
s ö
ç1 +
÷
2p ´ fZ ø
VOUT
= Adc ´ è
VC
æ
s ö
ç1 +
÷
2
p
´ fP ø
è
Adc = gmps ´ RL
(14)
(15)
1
fP =
COUT ´ RL ´ 2p
(16)
1
fZ =
COUT ´ RESR ´ 2p
(17)
Small-Signal Model for Frequency Compensation
The TPS54240-Q1 uses a transconductance amplifier for the error amplifier and readily supports three of the
commonly-used frequency compensation circuits. Compensation circuits Type 2A, Type 2B, and Type 1 are
shown in Figure 48. Type 2 circuits most likely implemented in high bandwidth power-supply designs using low
ESR output capacitors. The Type 1 circuit is used with power-supply designs with high-ESR aluminum
electrolytic or tantalum capacitors.. Equation 18 and Equation 19 show how to relate the frequency response of
the amplifier to the small signal model in Figure 48. The open-loop gain and bandwidth are modeled using the RO
and CO shown in Figure 48. See the application section for a design example using a Type 2A network with a
low ESR output capacitor.
Equation 18 through Equation 27 are provided as a reference for those who prefer to compensate using the
preferred methods. Those who prefer to use prescribed method use the method outlined in the application
section or use switched information.
VO
R1
VSENSE
gmea
COMP
Type 2A
Type 2B
Type 1
Vref
R2
RO
CO
R3
C2
C1
R3
C2
C1
Figure 48. Types of Frequency Compensation
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DETAILED DESCRIPTION (continued)
Aol
A0
P1
Z1
P2
A1
BW
Figure 49. Frequency Response of the Type 2A and Type 2B Frequency Compensation
Aol(V/V)
gmea
gmea
=
2p ´ BW (Hz)
Ro =
CO
(18)
(19)
æ
ö
s
ç1 +
÷
2p ´ fZ1 ø
è
EA = A0 ´
æ
ö æ
ö
s
s
ç1 +
÷ ´ ç1 +
÷
2
2
p
´
p
´
f
f
P1 ø è
P2 ø
è
A0 = gmea
A1 = gmea
P1 =
Z1 =
P2 =
P2 =
P2 =
(20)
R2
´ Ro ´
R1 + R2
R2
´ Ro| | R3 ´
R1 + R2
(21)
(22)
1
2p ´ Ro ´ C1
(23)
1
2p ´ R3 ´ C1
(24)
1
2p ´ R3 | | RO ´ (C2 + CO )
type 2a
(25)
1
type 2b
2p ´ R3 | | RO ´ CO
2p ´ R O
(26)
1
type 1
´ (C2 + C O )
(27)
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APPLICATION INFORMATION
Design Guide — Step-By-Step Design Procedure
This example details the design of a high frequency switching regulator design using ceramic output capacitors.
A few parameters must be known in order to start the design process. These parameters are typically determined
at the system level. For this example, use the following known parameters:
Output Voltage
3.3 V
Transient Response 0- to 1.5-A load step
ΔVout = 3 %
Maximum Output Current
2.5 A
Input Voltage
12 V (nom) 10.8 V to 13.2 V
Output Voltage Ripple
1% of Vout
Start Input Voltage (rising VIN)
6V
Stop Input Voltage (falling VIN)
5.5 V
Selecting the Switching Frequency
The first step is to decide on a switching frequency for the regulator. Typically, the user chooses the highest
switching frequency possible because it produces the smallest solution size. The high switching frequency allows
for lower valued inductors and smaller output capacitors compared to a power supply that switches at a lower
frequency. The switching frequency that can be selected is limited by the minimum on-time of the internal power
switch, the input voltage and the output voltage and the frequency shift limitation.
Equation 12 and Equation 13 must be used to find the maximum switching frequency for the regulator, choose
the lower value of the two equations. Switching frequencies higher than these values result in pulse skipping or
the lack of overcurrent protection during a short circuit.
The typical minimum on time, tonmin, is 135 ns for the TPS54240-Q1. For this example, the output voltage is 3.3 V
and the maximum input voltage is 13.2 V, which allows for a maximum switch frequency up to 2247 kHz when
including the inductor resistance, on resistance output current and diode voltage in Equation 12. To ensure
overcurrent runaway is not a concern during short circuits in your design use Equation 13 or the solid curve in
Figure 41 to determine the maximum switching frequency. With a maximum input voltage of 13.2 V, assuming a
diode voltage of 0.7 V, inductor resistance of 26 mΩ, switch resistance of 200 mΩ, a current limit value of 3.5 A
and a short circuit output voltage of 0.2 V. The maximum switching frequency is approximately 4449 kHz.
For this design, a much lower switching frequency of 300 kHz is used. To determine the timing resistance for a
given switching frequency, use Equation 11 or the curve in Figure 40.
The switching frequency is set by resistor R3 shown in Figure 50 For 300 kHz operation a 412 kΩ resistor is
required.
28
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TPS54240DGQ
Figure 50. 3.3-V Output TPS54240-Q1 Design Example.
Output Inductor Selection (LO)
To calculate the minimum value of the output inductor, use Equation 28.
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents
impact the selection of the output capacitor because the output capacitor must have a ripple current rating equal
to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion of the
designer; however, the following guidelines may be used.
For designs using low ESR output capacitors such as ceramics, a value as high as KIND = 0.3 may be used.
When using higher ESR output capacitors, KIND = 0.2 yields better results. Because the inductor ripple current is
part of the PWM control system, the inductor ripple current should always be greater than 150 mA for
dependable operation. In a wide input voltage regulator, it is best to choose an inductor ripple current on the
larger side. This allows the inductor to still have a measurable ripple current with the input voltage at its
minimum.
For this design example, use KIND = 0.3 and the minimum inductor value is calculated to be 11 μH. For this
design, a nearest standard value was chosen: 10 μH. For the output filter inductor, it is important that the RMS
current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from
Equation 30 and Equation 31.
For this design, the RMS inductor current is 2.51 A and the peak inductor current is 2.913 A. The chosen
inductor is a Coilcraft MSS1038-103NLB . It has a saturation current rating of 4.52 A and an RMS current rating
of 4.05 A.
As the equation set demonstrates, lower ripple currents reduce the output voltage ripple of the regulator but
require a larger value of inductance. Selecting higher ripple currents increases the output voltage ripple of the
regulator but allow for a lower inductance value.
The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
Vinmax - Vout
Vout
Lo min =
´
Io ´ KIND
Vinmax ´ ƒsw
(28)
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IRIPPLE =
IL(rms) =
VOUT ´
(Vin max
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- VOUT )
Vin max ´ L O ´ fSW
1
- VOUT ) ö
÷
÷
Vinmax ´ LO ´ fSW
ø
æ VOUT ´
(IO )2 + 12 ´ çç
è
(29)
(Vinmax
2
Iripple
ILpeak = Iout +
2
(30)
(31)
Output Capacitor
There are three primary considerations for selecting the value of the output capacitor. The output capacitor
determines the modulator pole, the output voltage ripple, and how the regulators responds to a large change in
load current. The output capacitance needs to be selected based on the more stringent of these three criteria.
The desired response to a large change in the load current is the first criteria. The output capacitor needs to
supply the load with current when the regulator can not. This situation would occur if there are desired hold-up
times for the regulator where the output capacitor must hold the output voltage above a certain level for a
specified amount of time after the input power is removed. The regulator also is temporarily not able to supply
sufficient output current if there is a large, fast increase in the current needs of the load such as transitioning
from no load to a full load. The regulator usually needs two or more clock cycles for the control loop to see the
change in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor
must be sized to supply the extra current to the load until the control loop responds to the load change. The
output capacitance must be large enough to supply the difference in current for two clock cycles while only
allowing a tolerable amount of droop in the output voltage. Equation 32 shows the minimum output capacitance
necessary to accomplish this.
Where ΔIout is the change in output current, ƒsw is the regulators switching frequency and ΔVout is the
allowable change in the output voltage. For this example, the transient load response is specified as a 3%
change in Vout for a load step from 1.5 A to 2.5 A (full load). For this example, ΔIout = 2.5 – 1.5 = 1 A and ΔVout
= 0.03 × 3.3 = 0.099 V. Using these numbers gives a minimum capacitance of 67 μF. This value does not take
the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is
usually small enough to ignore in this calculation. Aluminum electrolytic and tantalum capacitors have higher
ESR that should be taken into account.
The catch diode of the regulator can not sink current so any stored energy in the inductor produces an output
voltage overshoot when the load current rapidly decreases, see Figure 51. The output capacitor must also be
sized to absorb energy stored in the inductor when transitioning from a high load current to a lower load current.
The excess energy that gets stored in the output capacitor increases the voltage on the capacitor. The capacitor
must be sized to maintain the desired output voltage during these transient periods. Equation 33 is used to
calculate the minimum capacitance to keep the output voltage overshoot to a desired value. Where L is the value
of the inductor, IOH is the output current under heavy load, IOL is the output under light load, Vf is the final peak
output voltage, and Vi is the initial capacitor voltage. For this example, the worst case load step is from 2.5 A to
1.5 A. The output voltage increases during this load transition and the stated maximum in our specification is 3 %
of the output voltage. This makes Vf = 1.03 × 3.3 = 3.399. Vi is the initial capacitor voltage which is the nominal
output voltage of 3.3 V. Using these numbers in Equation 33 yields a minimum capacitance of 60 μF.
Equation 34 calculates the minimum output capacitance needed to meet the output voltage ripple specification.
Where fsw is the switching frequency, Voripple is the maximum allowable output voltage ripple, and Iripple is the
inductor ripple current. Equation 34 yields 12 μF.
Equation 35 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 35 indicates the ESR should be less than 36 mΩ.
The most stringent criteria for the output capacitor is 67 μF of capacitance to keep the output voltage in
regulation during an load transient.
Additional capacitance de-ratings for aging, temperature and dc bias should be factored in which increases this
minimum value. For this example, 2 × 47 μF, 10 V ceramic capacitors with 3 mΩ of ESR is used. The derated
capacitance is 72.4 µF, above the minimum required capacitance of 67 µF.
30
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Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the Root Mean Square (RMS) value of the maximum ripple current. Equation 36 can be used
to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 36 yields
238 mA.
2 ´ DIout
Cout =
¦ sw ´ DVout
(32)
((Ioh)
((V ¦)
2
Cout > Lo ´
1
Cout >
8 ´ ¦ sw
´
2
)
- ( Vi) )
- (Iol)2
2
(33)
1
VORIPPLE
IRIPPLE
(34)
V
RESR < ORIPPLE
IRIPPLE
Icorms =
(35)
Vout ´ (Vin max - Vout)
12 ´ Vin max ´ Lo ´ ¦ sw
(36)
Catch Diode
The TPS54240-Q1 requires an external catch diode between the PH pin and GND. The selected diode must
have a reverse voltage rating equal to or greater than Vinmax. The peak current rating of the diode must be
greater than the maximum inductor current. The diode should also have a low forward voltage. Schottky diodes
are typically a good choice for the catch diode due to their low forward voltage. The lower the forward voltage of
the diode, the higher the efficiency of the regulator.
Typically, the higher the voltage and current ratings the diode has, the higher the forward voltage is. Although the
design example has an input voltage up to 13.2 V, a diode with a minimum of 60-V reverse voltage is selected.
For the example design, the B360B-13-F Schottky diode is selected for its lower forward voltage and it comes in
a larger package size which has good thermal characteristics over small devices. The typical forward voltage of
the B360B-13-F is 0.70 volts.
The diode must also be selected with an appropriate power rating. The diode conducts the output current during
the off-time of the internal power switch. The off-time of the internal switch is a function of the maximum input
voltage, the output voltage, and the switching frequency. The output current during the off-time is multiplied by
the forward voltage of the diode which equals the conduction losses of the diode. At higher switch frequencies,
the ac losses of the diode need to be taken into account. The ac losses of the diode are due to the charging and
discharging of the junction capacitance and reverse recovery. Equation 37 is used to calculate the total power
dissipation, conduction losses plus ac losses, of the diode.
The B360B-13-F has a junction capacitance of 200 pF. Using Equation 37, the selected diode dissipates 1.32
Watts.
If the power supply spends a significant amount of time at light load currents or in sleep mode consider using a
diode which has a low leakage current and slightly higher forward voltage drop.
2
(Vin max - Vout) ´ Iout ´ Vƒd Cj ´ ƒsw ´ (Vin + Vƒd)
Pd =
+
2
Vin max
(37)
Input Capacitor
The TPS54240-Q1 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 3 μF
of effective capacitance and in some applications a bulk capacitance. The effective capacitance includes any dc
bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The
capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54240Q1. The input ripple current can be calculated using Equation 38.
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The value of a ceramic capacitor varies significantly over temperature and the amount of dc bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the dc bias taken into account. The capacitance value of a capacitor
decreases as the dc bias across a capacitor increases.
For this example design, a ceramic capacitor with at least a 60-V voltage rating is required to support the
maximum input voltage. Common standard ceramic capacitor voltage ratings include 4 V, 6.3 V, 10 V, 16 V, 25
V, 50 V or 100 V so a 100-V capacitor should be selected. For this example, two 2.2-μF 100-V capacitors in
parallel have been selected. Table 1 shows a selection of high voltage capacitors. The input capacitance value
determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 39.
Using the design example values, Ioutmax = 2.5 A, Cin = 4.4μF, ƒsw = 300 kHz, yields an input voltage ripple of
206 mV and a rms input ripple current of 1.15 A.
Icirms = Iout ´
Vout
´
Vin min
(Vin min
- Vout )
Vin min
(38)
Iout max ´ 0.25
ΔVin =
Cin ´ ¦ sw
(39)
Table 1. Capacitor Types
VENDOR
VALUE (μF)
1 to 2.2
Murata
1 to 4.7
1
1 to 2.2
1 10 1.8
Vishay
1 to 1.2
1 to 3.9
1 to 1.8
1 to 2.2
TDK
1.5 to 6.8
1 to 2.2
1 to 3.3
1 to 4.7
AVX
1
1 to 4.7
1 to 2.2
EIA Size
1210
1206
2220
2225
1812
1210
1210
1812
VOLTAGE
DIALECTRIC
100 V
COMMENTS
GRM32 series
50 V
100 V
GRM31 series
50 V
50 V
100 V
VJ X7R series
50 V
100 V
100 V
50 V
100 V
50 V
X7R
C series C4532
C series C3225
50 V
100 V
50 V
X7R dielectric series
100 V
Slow-Start Capacitor
The slow-start capacitor determines the minimum amount of time it takes for the output voltage to reach its
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This
is also used if the output capacitance is large and would require large amounts of current to quickly charge the
capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the
TPS54240-Q1 reach the current limit or excessive current draw from the input power supply may cause the input
voltage rail to sag. Limiting the output voltage slew rate solves both of these problems.
The slow start time must be long enough to allow the regulator to charge the output capacitor up to the output
voltage without drawing excessive current. Equation 40 can be used to find the minimum slow start time, tss,
necessary to charge the output capacitor, Cout, from 10% to 90% of the output voltage, Vout, with an average
slow start current of Issavg. In the example, to charge the effective output capacitance of 72.4 µF up to 3.3 V
while only allowing the average output current to be 1 A would require a 0.19 ms slow start time.
32
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Once the slow start time is known, the slow start capacitor value can be calculated using Equation 6. For the
example circuit, the slow start time is not too critical because the output capacitor value is 2 × 47μF which does
not require much current to charge to 3.3 V. The example circuit has the slow start time set to an arbitrary value
of 3.5 ms which requires a 8.75 nF slow start capacitor. For this design, the next larger standard value of 10 nF
is used.
Cout ´ Vout ´ 0.8
Tss >
Issavg
(40)
Bootstrap Capacitor Selection
A 0.1-μF ceramic capacitor must be connected between the BOOT and PH pins for proper operation. TI
recommends to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have a 10 V or
higher voltage rating.
Undervoltage Lockout Set Point
The Under Voltage Lock Out (UVLO) can be adjusted using an external voltage divider on the EN pin of the
TPS54240-Q1. The UVLO has two thresholds, one for power up when the input voltage is rising and one for
power down or brown outs when the input voltage is falling. For the example design, the supply should turn on
and start switching once the input voltage increases above 6 V (enabled). After the regulator starts switching, it
should continue to do so until the input voltage falls below 5.5 V (UVLO stop).
The programmable UVLO and enable voltages are set using the resistor divider of R1 and R2 between Vin and
ground to the EN pin. Equation 2 through Equation 3 can be used to calculate the resistance values necessary.
For the example application, a 124 kΩ between Vin and EN (R1) and a 30.1 kΩ between EN and ground (R2)
are required to produce the 6 and 5.5 volt start and stop voltages.
Output Voltage and Feedback Resistors Selection
The voltage divider of R5 and R6 is used to set the output voltage. For the example design, 10 kΩ was selected
for R6. Using Equation 1, R5 is calculated as 31.25 kΩ. The nearest standard 1% resistor is 31.6 kΩ. Due to
current leakage of the VSENSE pin, the current flowing through the feedback network should be greater than 1
μA in order to maintain the output voltage accuracy. This requirement makes the maximum value of R2 equal to
800 kΩ. Choosing higher resistor values decrease quiescent current and improve efficiency at low output
currents but may introduce noise immunity problems.
Compensation
There are several methods used to compensate DC/DC regulators. The method presented here is easy to
calculate and ignores the effects of the slope compensation that is internal to the device. Because the slope
compensation is ignored, the actual cross over frequency is usually lower than the cross over frequency used in
the calculations. This method assumes the crossover frequency is between the modulator pole and the esr zero
and the esr zero is at least 10 times greater the modulator pole. Use SwitcherPro software for a more accurate
design.
To get started, the modulator pole, fpmod, and the esr zero, fz1 must be calculated using Equation 41 and
Equation 42. For Cout, use a derated value of 40 μF. Use equations Equation 43 and Equation 44, to estimate a
starting point for the crossover frequency, fco, to design the compensation. For the example design, fpmod is
1206 Hz and fzmod is 530.5 kHz. Equation 43 is the geometric mean of the modulator pole and the ESR zero
and Equation 44 is the mean of modulator pole and the switching frequency. Equation 43 yields 25.3 kHz and
Equation 44 gives 13.4 kHz. Use the lower value of Equation 43 or Equation 44 for an initial crossover frequency.
For this example, a higher fco is desired to improve transient response. the target fco is 35.0 kHz. Next, the
compensation components are calculated. A resistor in series with a capacitor is used to create a compensating
zero. A capacitor in parallel to these two components forms the compensating pole.
Ioutmax
¦p mod =
2 × p × Vout × Cout
(41)
1
¦ z mod =
2 ´ p ´ Resr × Cout
(42)
fco =
f p mod ´ f z mod
(43)
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fco =
f p mod ´
f sw
2
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(44)
To determine the compensation resistor, R4, use Equation 45. Assume the power stage transconductance, gmPS,
is 10.5 A/V. The output voltage, Vo, reference voltage, VREF, and amplifier transconductance, gmEA, are 3.3 V,
0.8 V and 310 μA/V, respectively. R4 is calculated to be 20.2 kΩ, use the nearest standard value of 20 kΩ. Use
Equation 46 to set the compensation zero to the modulator pole frequency. Equation 46 yields 4740 pF for
compensating capacitor C5, a 4700 pF is used for this design.
ö
æ 2 ´ p ´ fco ´ Cout ö æ
Vout
R4 = ç
÷
÷´ç
gmps
è
ø è Vref ´ gmea ø
1
C5 =
2 ´ p ´ R4 ´ fpmod
(45)
(46)
A compensation pole can be implemented if desired using an additional capacitor C8 in parallel with the series
combination of R4 and C5. Use the larger value of Equation 47 and Equation 48 to calculate the C8, to set the
compensation pole. C8 is not used for this design example.
C ´ Re sr
C8 = o
R4
(47)
C8 =
1
R4 ´ f sw ´ p
(48)
Discontinuous Mode and Eco-mode Boundary
With an input voltage of 12 V, the power supply enters discontinuous mode when the output current is less than
337 mA. The power supply enters Eco-mode when the output current is lower than 5 mA.
The input current draw at no load is 392 μA.
34
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APPLICATION CURVES
Vout = 50 mv / div (ac coupled)
Vin = 10 V / div
Vout = 2 V / div
Output Current = 1 A / div (Load Step 1.5 A to 2.5 A)
EN = 2 V / div
SS/TR = 2 V / div
Time = 200 usec / div
Time = 5 msec / div
Figure 51. Load Transient
Figure 52. Startup With VIN
Vout = 20 mV / div (ac coupled)
Vout = 20 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 2 usec / div
Time = 2 usec / div
Figure 53. Output Ripple, CCM
Figure 54. Output Ripple, DCM
Vin = 200 mV / div (ac coupled)
Vout = 20 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 2 usec / div
Time = 10 usec / div
Figure 55. Output Ripple, PSM
Figure 56. Input Ripple, CCM
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100
90
Vin = 50 mV / div (ac coupled)
80
Efficiency - %
70
PH = 5 V / div
60
50
40
30
VIN=12V
VOUT=3.3V
fsw=300kHz
20
Time = 2 usec / div
10
0
0
Figure 57. Input Ripple, DCM
0.5
2.5
1.0
1.5
2.0
IO - Output Current - A
3.0
Figure 58. Efficiency Versus Load Current
100
60
180
90
40
80
120
Phase
70
60
Gain
50
40
0
0
-20
30
VIN=12V
VOUT=3.3V
fsw=300kHz
20
-60
VIN=12 V
VOUT=3.3V
IOUT=2.5A
-40
10
0
0.001
0.1
0.01
IO - Output Current - A
-60
10
-120
1-104
1-103
f - Frequency - Hz
100
3.4
3.4
3.38
3.38
3.36
3.34
3.32
3.36
3.34
VIN=12V
VOUT=3.3V
fsw=300kHz
IOUT=1.5A
3.32
VIN=12V
VOUT=3.3V
fsw=300kHz
3.3
0
0.5
1.5
1.0
2.0
IO - Output Current - A
2.5
3.0
Figure 61. Regulation Versus Load Current
36
-180
1-106
1-105
Figure 60. Overall Loop-Frequency Response
VO - Output Voltage - V
VO - Output Voltage - V
Figure 59. Light-Load Efficiency
Phase - o
Gain - dB
Efficiency - %
20
60
3.3
10.8
11.2
11.6
12.4
12
IO - Output Current - A
12.8
13.2
Figure 62. Regulation Versus Input Voltage
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
Power-Dissipation Estimate
The following formulas show how to estimate the IC power dissipation under continuous conduction mode (CCM)
operation. These equations should not be used if the device is working in discontinuous conduction mode (DCM).
The power dissipation of the IC includes conduction loss (Pcon), switching loss (Psw), gate drive loss (Pgd) and
supply current (Pq).
Vout
Pcon = Io2 ´ RDS(on) ´
Vin
(49)
Psw = Vin 2 ´ ¦ sw ´ lo ´ 0.25 ´ 10-9
Pgd = Vin ´ 3 ´ 10
Pq = 116 ´ 10
-6
-9
(50)
´ ¦ sw
(51)
´ Vin
Where:
•
•
•
•
•
IOUT is the output current (A)
RDS(on) is the on-resistance of the high-side MOSFET (Ω)
VOUT is the output voltage (V)
VIN is the input voltage (V)
ƒsw is the switching frequency (Hz)
(52)
So
Ptot = Pcon + Psw + Pgd + Pq
(53)
For given TA,
TJ = TA + Rth ´ Ptot
(54)
For given TJMAX = 150°C
TAmax = TJmax - Rth ´ Ptot
Where:
•
•
•
•
•
•
Ptot is the total device power dissipation (W)
TA is the ambient temperature (°C)
TJ is the junction temperature (°C)
Rth is the thermal resistance of the package (°C/W)
TJMAX is maximum junction temperature (°C)
TAMAX is maximum ambient temperature (°C)
(55)
There is additional power losses in the regulator circuit due to the inductor ac and dc losses, the catch diode and
trace resistance that impacts the overall efficiency of the regulator.
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Layout
Layout is a critical portion of good power supply design. There are several signals paths that conduct fast
changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise
or degrade the power supplies performance. To help eliminate these problems, the VIN pin should be bypassed
to ground with a low ESR ceramic bypass capacitor with X5R or X7R dielectric. Care should be taken to
minimize the loop area formed by the bypass capacitor connections, the VIN pin, and the anode of the catch
diode. See Figure 63 for a PCB layout example. The GND pin should be tied directly to the power pad under the
IC and the power pad.
The power pad should be connected to any internal PCB ground planes using multiple vias directly under the IC.
The PH pin should be routed to the cathode of the catch diode and to the output inductor. Because the PH
connection is the switching node, the catch diode and output inductor should be located close to the PH pins,
and the area of the PCB conductor minimized to prevent excessive capacitive coupling. For operation at full rated
load, the top side ground area must provide adequate heat dissipating area. The RT/CLK pin is sensitive to noise
so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of trace. The
additional external components can be placed approximately as shown. It may be possible to obtain acceptable
performance with alternate PCB layouts, however this layout has been shown to produce good results and is
meant as a guideline.
Vout
Output
Capacitor
Topside
Ground
Area
Input
Bypass
Capacitor
Vin
UVLO
Adjust
Resistors
Slow Start
Capacitor
Output
Inductor
Route Boot Capacitor
Trace on another layer to
provide wide path for
topside ground
BOOT
Catch
Diode
PH
VIN
GND
EN
COMP
SS/TR
VSENSE
RT/CLK
PWRGD
Frequency
Set Resistor
Compensation
Network
Resistor
Divider
Thermal VIA
Signal VIA
Figure 63. PCB Layout Example
38
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
Estimated Circuit Area
The estimated printed circuit board area for the components used in the design of Figure 50 is 0.55 in2. This area
does not include test points or connectors.
VIN
+
Cin
Cboot
Lo
BOOT
VIN
Cd
PH
GND
R1
+
GND
Co
R2
TPS54240
VOUT
VSENSE
EN
COMP
SS/TR
Rcomp
RT/CLK
Css
Czero
RT
Cpole
Figure 64. TPS54240-Q1 Inverting Power Supply from Application Note SLVA317
VOPOS
+
VIN
Copos
+
Cin
Cboot
BOOT
VIN
GND
PH
Lo
Cd
R1
GND
+
Coneg
R2
TPS54240
VONEG
VSENSE
EN
COMP
SS/TR
Rcomp
RT/CLK
Css
RT
Czero
Cpole
Figure 65. TPS54240-Q1 Split Rail Power Supply Based on Application Note SLVA369
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TPS54240-Q1
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TPS54240DGQ
Figure 66. 12-V to 3.8-V GSM Power Supply
TPS54240DGQ
Figure 67. 24-V to 4.2-V GSM Power Supply
40
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SLVSAQ4B – DECEMBER 2010 – REVISED SEPTEMBER 2013
REVISION HISTORY
Changes from Revision A (April 2011) to Revision B
Page
•
Added AEC qualification text and results for temperature grade and HBM/CDM classifications to FEATURES ................ 1
•
Changed ABSOLUTE MAXIMUM RATINGS table and added HBM/CDM classification levels ........................................... 2
•
Added DRC package to PIN CONFIGURATION .................................................................................................................. 5
•
Changed Power Good resistance from 10 to 1 kΩ in Power Good (PWRGD Pin) section ................................................ 23
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41
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS54240QDGQRQ1
ACTIVE
HVSSOP
DGQ
10
2500
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
5424Q
TPS54240QDRCRQ1
ACTIVE
VSON
DRC
10
3000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
5424Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of