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TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
TPS6505x 6-Channel Power-Management IC With Two Step-Down Converters
and Four Low-Input Voltage LDOs
TPS65052 is Obsolete
1 Features
3 Description
•
•
The TPS6505x family of devices are integrated
power-management ICs for applications powered by
one Li-Ion or Li-Polymer cell, which require multiple
power rails. The TPS6505x devices provide two
highly efficient, 2.25-MHz step-down converters
targeted at providing the core voltage and I/O voltage
in a processor-based system. Both step-down
converters enter a low-power mode at light load for
maximum efficiency across the widest possible range
of load currents. For low noise applications, the
devices can be forced into fixed-frequency PWM
mode by pulling the MODE pin high. The TPS6505x
devices also integrate two 400-mA LDO and two 200mA LDO voltage regulators. Each LDO operates with
an input voltage range from 1.5 V to 6.5 V, allowing
them to be supplied from one of the step-down
converters or directly from the main battery.
1
•
•
•
•
•
•
•
•
•
•
•
•
Up To 95% Efficiency
Output Current for DC-DC Converters:
– TPS65050, TPS65054: 2 × 0.6 A
– TPS65051, TPS65052 and TPS65056:
DCDC1 = 1 A; DCDC2 = 0.6 A
Output Voltages for DC-DC Converters
– Externally Adjustable and Fixed Versions
Available
– Digital Voltage Selection for the DCDC2
VI Range for DC-DC Converters
From 2.5 V to 6 V
2.25-MHz Fixed-Frequency Operation
Power Save Mode at Light Load Current
180° Out-of-Phase Operation
Output Voltage Accuracy in PWM Mode ±1%
Total Typical 32-μA Quiescent Current for Both
DC-DC Converters
100% Duty Cycle for Lowest Dropout
Two General-Purpose 400-mA, High PSRR LDOs
Two General-Purpose 200-mA, High PSRR LDOs
VI range for LDOs From 1.5 V to 6.5 V
Digital Voltage Selection for the LDOs
Device Information(1)
PART NUMBER
TPS6505x
PACKAGE
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
VINDCDC1/2
1
VCC
Vbat
22 …F
L1
1 …F
Cff
Cell Phones, Smart Phones
WLAN
PDAs, Pocket PCs
OMAP™ and Low-Power TMS320™ DSP Supply
Samsung S3C24xx Application Processor Supply
Portable Media Players
R1
DCDC1 (I/O)
2 Applications
•
•
•
•
•
•
BODY SIZE (NOM)
VQFN (32)
ENABLE
Step-Down
Converter
600 mA
EN_DCDC1
10 …F
FB_DCDC1
R2
PGND1
MODE
DEFLDO1
DEFLDO2
L2
Interface
DEFLDO3
DCDC2 (core)
R3
VDCDC2
DEFLDO4
ENABLE
Step-Down
Converter
600 mA
EN_DCDC2
10 …F
DEFDCDC2
R4
PGND2
VIN
VIN_LDO1
ENABLE
VIN
4.7 …F
VLDO2
VIN_LDO2
VLDO2
400-mA LDO
EN_LDO2
ENABLE
VIN
VLDO1
VLDO1
400-mA LDO
EN_LDO1
4.7 …F
VIN_LDO3/4
ENABLE
VLDO3
VLDO3
200-mA LDO
EN_LDO3
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
Vbat
I/O Voltage
200-mA LDO
2.2 …F
R19
PB_OUT
Flip-flop with
32-ms debounce
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Options.......................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
5
7.1
7.2
7.3
7.4
7.5
7.6
7.7
5
6
6
6
7
9
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Dissipation Ratings ...................................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagrams ..................................... 12
8.3 Feature Description................................................. 17
8.4 Device Functional Modes........................................ 22
9
Application and Implementation ........................ 23
9.1 Application Information............................................ 23
9.2 Typical Application .................................................. 24
10 Power Supply Recommendations ..................... 33
11 Layout................................................................... 33
11.1 Layout Guidelines ................................................. 33
11.2 Layout Example .................................................... 34
12 Device and Documentation Support ................. 35
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Device Support......................................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
35
35
35
35
35
35
35
13 Mechanical, Packaging, and Orderable
Information ........................................................... 36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (June 2015) to Revision C
Page
•
Deleted package marking and package information from the Device Options table. See the Device and
Documentation Support section for packaging information .................................................................................................... 3
•
Replaced references to PowerPAD with thermal pad ............................................................................................................ 5
•
Updated the functional block diagrams ............................................................................................................................... 12
•
Specified the maximum dropout voltage for each LDO in the Low Dropout Voltage Regulators section ............................ 21
•
Changed the resistor labels of R3, R4, and R5 to R13, R14, and R15 in the RESET section and updated the
RESET Circuit figure ............................................................................................................................................................ 29
•
Updated the Typical Characteristics and Application Curves sections ................................................................................ 30
•
Added the Receiving Notification of Documentation Updates section ................................................................................. 35
•
Changed the Electrostatic Discharge Caution statement..................................................................................................... 35
Changes from Revision A (August 2007) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Changed graph in Figure 14: should be PF_IN and PB_OUT not PB_IN and /RESPWRON ............................................. 21
Changes from Original (January 2007) to Revision A
Page
•
Added quantities of 3000 parts to ordering information note ................................................................................................ 3
•
Added Output voltage range to absolute maximum ratings table .......................................................................................... 5
•
Changed LDO1/2 Output voltage range maximum value to 3.6 V ......................................................................................... 6
•
Changed Output voltage 2.8-V R5 resistor value to 360 kΩ in typical resistor values table................................................ 28
2
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Copyright © 2007–2017, Texas Instruments Incorporated
Product Folder Links: TPS65050 TPS65051 TPS65054 TPS65056
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
www.ti.com
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
5 Device Options
PART
NUMBER
OPTION
OUTPUT CURRENT
for DC-DC CONVERTERS
TPS65050
LDO voltages according to Table 1
DC-DC converters externally adjustable
2 × 600 mA
TPS65051
LDO voltages externally adjustable
DC-DC converters externally adjustable
DCDC1 = 1 A
DCDC2 = 600 mA
TPS65052
LDO voltages according to Table 1
DCDC1 = 3.3 V; DCDC2 = 1 V / 1.3 V
DCDC1 = 1 A
DCDC2 = 600 mA
TPS65054
LDO voltages externally adjustable
DCDC1 = externally adjustable
DCDC2 = 1.3 V / 1.05 V
2 × 600 mA
TPS65056
LDO voltages externally adjustable
DCDC1 = 3.3 V
DCDC2 = 1 V / 1.3 V
DCDC1 = 1A
DCDC2 = 600 mA
6 Pin Configuration and Functions
VINDCDC1/2
L2
PGND2
VDCDC2
DEFDCDC2
20
19
18
17
DEFDCDC2
17
21
VDCDC2
18
L1
PGND2
19
22
L2
20
PGND1
VINDCDC1/2
21
FB_DCDC1
L1
22
23
PGND1
23
TPS65052 RSM Package
32-Pin VQFN With Exposed Thermal Pad
Top View
24
FB_DCDC1
24
TPS65050 RSM Package
32-Pin VQFN With Exposed Thermal Pad
Top View
EN_DCDC1
25
16
EN_LDO4
EN_DCDC1
25
16
EN_LDO4
EN_DCDC2
26
15
EN_LDO3
EN_DCDC2
26
15
EN_LDO3
EN_LDO1
27
14
PB_OUT
EN_LDO1
27
14
RESET
EN_LDO2
28
13
DEFLDO4
EN_LDO2
28
13
DEFLDO4
VINLDO1
29
12
VLDO4
7
8
THRESHOLD
HYSTERESIS
6
9
DEFLDO2
32
5
MODE
4
VLDO3
VLDO2
VINLDO3/4
10
VINLDO2
11
31
3
30
VCC
8
GND
Not to scale
VLDO1
DEFLDO1
2
7
PB_IN
Copyright © 2007–2017, Texas Instruments Incorporated
DEFLDO3
Pad
1
6
DEFLDO2
9
5
32
4
MODE
VLDO2
VLDO3
VINLDO2
10
3
31
VCC
DEFLDO1
2
VINLDO3/4
1
VLDO4
11
BP
12
30
AGND
29
VLDO1
BP
Pad
VINLDO1
Thermal
AGND
Thermal
DEFLDO3
Not to scale
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3
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
www.ti.com
FB_DCDC1
PGND1
L1
VINDCDC1/2
L2
PGND2
VDCDC2
DEFDCDC2
24
23
22
21
20
19
18
17
TPS65051, TPS65054, TPS65056 RSM Package
32-Pin VQFN With Exposed Thermal Pad
Top View
EN_DCDC1
25
16
EN_LDO4
EN_DCDC2
26
15
EN_LDO3
EN_LDO1
27
14
RESET
EN_LDO2
28
13
FB4
VINLDO1
29
12
VLDO4
VLDO1
30
11
VINLDO3/4
FB1
31
10
VLDO3
MODE
32
9
Thermal
1
2
3
4
5
6
7
8
BP
AGND
VCC
VINLDO2
VLDO2
FB2
THRESHOLD
HYSTERESIS
Pad
FB3
Not to scale
Pin Functions
PIN
NAME
TPS65050
TPS65051
TPS65054
TPS65056
TPS65052
AGND
2
2
2
I
Analog GND, connect to PGND and thermal pad
BP
1
1
1
I
Input for bypass capacitor for internal reference.
I/O
DESCRIPTION
DEFDCDC2
17
17
17
I
TPS65050 and TPS65051 devices: Feedback pin for converter 2. Connect
DEFDCDC2 to the center of the external resistor divider.
TPS65052 and TPS65056 devices: Select pin of converter 2 output voltage.
High = 1.3 V, Low = 1 V
TPS65054 device: Select pin of converter 2 output voltage.
High = 1.05 V, Low = 1.3 V
DEFLDO1
31
—
31
I
Digital input, used to set the default output voltage of LDO1 to LDO4; LSB
DEFLDO2
6
—
6
I
Digital input, used to set the default output voltage of LDO1 to LDO4.
DEFLDO3
9
—
9
I
Digital input, used to set the default output voltage of LDO1 to LDO4.
DEFLDO4
13
—
13
I
Digital input, used to set the default output voltage of LDO1 to LDO4; MSB
EN_DCDC1
25
25
25
I
Enable Input for converter 1, active high
EN_DCDC2
26
26
26
I
Enable Input for converter 2, active high
EN_LDO1
27
27
27
I
Enable input for LDO1. Logic high enables the LDO, logic low disables the LDO.
EN_LDO2
28
28
28
I
Enable input for LDO2. Logic high enables the LDO, logic low disables the LDO.
EN_LDO3
15
15
15
I
Enable input for LDO3. Logic high enables the LDO, logic low disables the LDO.
EN_LDO4
16
16
16
I
Enable input for LDO4. Logic high enables the LDO, logic low disables the LDO.
FB1
—
31
—
I
Feedback input for the external voltage divider.
FB2
—
6
—
I
Feedback input for the external voltage divider.
FB3
—
9
—
I
Feedback input for the external voltage divider.
4
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Copyright © 2007–2017, Texas Instruments Incorporated
Product Folder Links: TPS65050 TPS65051 TPS65054 TPS65056
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
www.ti.com
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
Pin Functions (continued)
PIN
TPS65050
TPS65051
TPS65054
TPS65056
TPS65052
FB4
—
13
—
I
Feedback input for the external voltage divider.
FB_DCDC1
24
24
24
I
Input to adjust output voltage of converter 1 between 0.6 V and VI. Connect
external resistor divider between VOUT1, this pin, and GND.
GND
8
—
—
—
HYSTERESIS
--
8
8
I
Input for hysteresis on reset threshold
L1
22
22
22
O
Switch pin of converter 1. Connected to Inductor .
L2
20
20
20
O
Switch Pin of converter 2. Connected to Inductor.
MODE
32
32
32
I
Select between Power Safe Mode and forced PWM Mode for DCDC1 and
DCDC2. In Power Safe Mode, PFM is used at light loads, PWM for greater loads.
If PIN is set to high level, forced PWM Mode is selected. If Pin has low level,
then the device operates in Power Safe Mode.
PB_IN
7
—
—
I
Input for the pushbutton ON-OFF function
PB_OUT
14
—
—
O
Open-drain output. Active low after the supply voltage (VCC) exceeded the
undervoltage lockout threshold. The pin can be toggled pulling PB_IN high.
PGND1
23
23
23
I
GND for converter 1
PGND2
19
19
19
I
GND for converter 2
RESET
—
14
14
O
Open-drain active low reset output, 100-ms reset delay time.
THRESHOLD
—
7
7
I
Reset input
VCC
3
3
3
I
Power supply for digital and analog circuitry of DCDC1, DCDC2 and LDOs. This
pin must be connected to the same voltage supply as VINDCDC1/2.
VDCDC2
18
18
18
I
Feedback voltage sense input, connect directly to the output of converter 2.
VINDCDC1/2
21
21
21
I
Input voltage for VDCDC1 and VDCDC2 step-down converter. This must be
connected to the same voltage supply as VCC.
VINLDO1
29
29
29
I
Input voltage for LDO1
VINLDO2
4
4
4
I
Input voltage for LDO2
VINLDO3/4
11
11
11
I
Input voltage for LDO3 and LDO4
VLDO1
30
30
30
O
Output voltage of LDO1
VLDO2
5
5
5
O
Output voltage of LDO2
VLDO3
10
10
10
O
Output voltage of LDO3
VLDO4
12
12
12
O
Output voltage of LDO4
Thermal pad
—
—
—
—
Connect to GND
NAME
I/O
DESCRIPTION
Connect to GND
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VI
II
VO
MIN
MAX
UNIT
Input voltage range on all pins except AGND, PGND, and EN_LDO1 pins with
respect to AGND
–0.3
7
V
Input voltage range on EN_LDO1 pins with respect to AGND
–0.3
VCC + 0.5
V
1800
mA
1000
mA
4
V
Current at VINDCDC1/2, L1, PGND1, L2, PGND2
Current at all other pins
Output voltage range for LDO1, LDO2, LDO3, and LDO4
Continuous total power dissipation
TA
Operating free-air temperature
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
–0.3
See Dissipation Ratings
–40
–65
85
°C
125
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Copyright © 2007–2017, Texas Instruments Incorporated
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5
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
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7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VI
NOM
MAX
UNIT
Input voltage range for step-down converters, VINDCDC1/2
2.5
6
V
Output voltage range for step-down converter, VDCDC1
0.6
VINDCDC1/2
V
Output voltage range for step-down converter, VDCDC2
0.6
VINDCDC1/2
V
VI
Input voltage range for LDOs, VINLDO1, VINLDO2, VINLDO3/4
1.5
6.5
V
VO
Output voltage range for LDO1, LDO2, LDO3 and LDO4
1
3.6
VO
IO
1000
mA
Output current at L1 (DCDC1) for TPS65050, TPS65054
600
mA
Output current at L1 (DCDC2)
600
mA
Output current at VLDO1, VLDO2
400
mA
Output current at VLDO3, VLDO4
200
mA
Inductor at L1, L2
CO
(1)
1.5
2.2
μH
Output capacitor at VDCDC1, VDCDC2 (1)
10
22
μF
Output capacitor at VLDO1, VLDO2, VLDO3, VLDO4 (1)
2.2
μF
1
μF
Input capacitor at VCC
CI
(1)
Input capacitor at VINLDO1/2/3/4 (1)
2.2
TA
Operating ambient temperature range
–40
TJ
Operating junction temperature range
–40
Rfilter
Resistor from battery voltage to VCC used for filtering (2)
(1)
(2)
V
Output current at L1 (DCDC1) for TPS65051, TPS65052
μF
1
85
°C
125
°C
10
Ω
See the Application and Implementation section of this data sheet for more details.
Up to 2 mA can flow into VCC when both converters are running in PWM, this resistor causes the UVLO threshold to be shifted
accordingly.
7.4 Thermal Information
TPS6505x
THERMAL METRIC (1)
RSM (VQFN)
UNIT
32 PINS
RθJA
Junction-to-ambient thermal resistance
37.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
30.4
°C/W
RθJB
Junction-to-board thermal resistance
8
°C/W
ψJT
Junction-to-top characterization parameter
0.4
°C/W
ψJB
Junction-to-board characterization parameter
7.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.5
°C/W
(1)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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Copyright © 2007–2017, Texas Instruments Incorporated
Product Folder Links: TPS65050 TPS65051 TPS65054 TPS65056
TPS65052 is Obsolete
TPS65050, TPS65051
TPS65052, TPS65054, TPS65056
www.ti.com
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
7.5 Electrical Characteristics
VCC = VINDCDC1/2 = 3.6 V, EN = VCC, MODE = GND, L = 2.2 μH, CO = 10 μF. TA = -40°C to 85°C, typical values are at TA =
25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
IQ
IQ
Input voltage range at VINDCDC1/2
Operating quiescent current
Total current into VCC, VINDCDC1/2,
VINLDO1, VINLDO2, VINLDO3/4
Operating quiescent current into VCC
2.5
6
V
20
30
μA
32
40
μA
One converter, IO = 0 mA.
PFM mode enabled (Mode = GND) device not
switching, EN_DCDC1 = VI OR EN_DCDC2 = VI;
EN_LDO1 = EN_LDO2 = EN_LDO3 = EN_LDO4 =
VI
180
250
μA
One converter, IO = 0 mA.
Switching with no load (Mode = VI), PWM operation
EN_DCDC1 = VI OR EN_DCDC2 = VI; EN_LDO1 =
EN_LDO2 = EN_LDO3/4 = GND
0.85
mA
Two converters, IO = 0 mA
Switching with no load (Mode = VI), PWM operation
EN_DCDC1 = VI AND EN_DCDC2 = VI; EN_LDO1 =
EN_LDO2 = EN_LDO3/4 = GND
1.25
mA
One converter, IO = 0 mA.
PFM mode enabled (Mode = GND) device not
switching, EN_DCDC1 = VI OR EN_DCDC2 = VI;
EN_LDO1= EN_LDO2 = EN_LDO3/4 = GND
Two converters, IO = 0 mA
PFM mode enabled (Mode = 0) device not switching,
EN_DCDC1 = VI AND EN_DCDC2 = VI; EN_LDO1 =
EN_LDO2 = EN_LDO3/4 = GND
I(SD)
Shutdown current
EN_DCDC1 = EN_DCDC2 = GND EN_LDO1 =
EN_LDO2 = EN_LDO3 = EN_LDO4 = GND
V(UVLO)
Undervoltage lockout threshold for
DCDC converters and LDOs
Voltage at VCC
9
12
μA
1.8
2
V
1.2
VCC
V
0
0.4
V
1
μA
100
nA
EN_DCDC1, EN_DCDC2, DEFDCDC2, DEFLDO1, DEFLDO2, DEFLDO3, DEFLDO4, EN_LDO1, EN_LDO2, EN_LDO3, EN_LDO4
VIH
High-level input voltage
MODE/DATA, EN_DCDC1, EN_DCDC2,
DEFDCDC2, DEFLDO1, DEFLDO2, DEFLDO3,
DEFLDO4, EN_LDO1, EN_LDO2, EN_LDO3,
EN_LDO4
VIL
Low-level input voltage
MODE/DATA, EN_DCDC1, EN_DCDC2, DEFLDO1,
DEFLDO2, DEFLDO3, DEFLDO4, EN_LDO1,
EN_LDO2, EN_LDO3, EN_LDO4, DEFDCDC2
IlB
MODE/DATA = GND or VI
MODE/DATA, EN_DCDC1, EN_DCDC2,
DEFDCDC2, DEFLDO1, DEFLDO2, DEFLDO3,
DEFLDO4, EN_LDO1, EN_LDO2, EN_LDO3,
EN_LDO4
Input bias current
0.01
TPS65051 and TPS65052 only
V_FB_LDOx = 1 V
FB_LDO1, FB_LDO2, FB_LDO3, FB_LDO4
POWER SWITCH
DCDC1
rDS(on)
P-channel MOSFET on resistance
DCDC2
Ilkg
P-channel leakage current
N-channel MOSFET on resistance
DCDC2
Ilkg
I(LIMF)
280
VINDCDC1/2 = 2.5 V
400
VINDCDC1/2 = 3.6 V
280
VINDCDC1/2 = 2.5 V
400
VINDCDC1/2 = 3.6 V
220
VINDCDC1/2 = 2.5 V
320
VINDCDC1/2 = 3.6 V
220
VINDCDC1/2 = 2.5 V
320
VDCDCx = V(DS) = 6 V
DCDC1
rDS(on)
VINDCDC1/2 = 3.6 V
N-channel leakage current
DCDC1:
Forward current limit
PMOS (High-Side)
and NMOS (Low side)
DCDC2:
TPS65051, TPS65052,
TPS65056
TPS65050 - TPS65056
Copyright © 2007–2017, Texas Instruments Incorporated
630
1
VDCDCx = V(DS) = 6 V
TPS65050
TPS65054
630
2.5 V ≤ VINDCDC1/2 ≤ 6
V
2.5 V ≤ VINDCDC1/2 ≤ 6
V
mΩ
μA
450
450
7
10
0.85
1
1.15
1.19
1.4
1.65
0.85
1
1.15
mΩ
μA
A
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Electrical Characteristics (continued)
VCC = VINDCDC1/2 = 3.6 V, EN = VCC, MODE = GND, L = 2.2 μH, CO = 10 μF. TA = -40°C to 85°C, typical values are at TA =
25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
OSCILLATOR
fSW
Oscillator frequency
2.025
2.25
2.475
MHz
OUTPUT
VO
Vref
Output voltage range for DCDC1,
DCDC2
externally adjustable
versions
Output voltage for DCDC1
TPS65052 and
TPS65056
Output voltage for DCDC2
TPS65052, TPS65054
and TPS65056
Reference voltage
externally adjustable
versions
DC output voltage
accuracy
VO
DCDC1,
DCDC2 (1)
VINDCDC
1/2
0.6
3.3
V
V
set by
DEFDCDC2,
see Table 3
600
mV
VINDCDC1/2 = 2.5 V to 6 V
0 mA < IO = < IO(max)
Mode = GND, PFM operation
–2%
0
2%
VINDCDC1/2 = 2.5 V to 6 V
0 mA < IO = < IO(max)
Mode = VI, PWM operation
–1%
0
1%
ΔVO
Power save mode ripple voltage (2)
IO = 1 mA, Mode = GND, VO = 1.3 V,
Bandwith = 20 MHz
25
mVPP
tStart
Start-up time
time from active EN to Start switching
170
μs
tRamp
VOUT Ramp up Time
time to ramp from 5% to 95% of VO
750
μs
tRESET_DEL
RESET delay time
Input voltage at threshold pin rising
80
100
26
32
120
ms
38
ms
AY
tPB_DB
PB-ONOFF debounce time
VOL
RESET, PB_OUT output low voltage
IOL
RESET, PB_OUT sink current
Ileak
RESET, PB_OUT output leakage
current
Vth
Vthreshold, Vhysteresis threshold
IOL = 1 mA, Vhysteresis < 1 V, Vthreshold < 1 V
0.2
After PB_IN has been pulled high once; Vthreshold >
1 V and Vhysteresis > 1 V, VOH = 6 V
0.98
V
1
mA
10
nA
1
1.02
V
1.5
6.5
V
VLDO1, VLDO2, VLDO3 and VLDO4 Low Dropout Regulators
VI
Input voltage range for LDO1, LDO2,
LDO3, LDO4
LDO1 output voltage range
TPS65050, TPS65052 only
1.2
3.3
LDO2 output voltage range
TPS65050, TPS65052 only
1.8
3.3
LDO3 output voltage range
TPS65050, TPS65052 only
1.1
3.3
LDO4 output voltage range
TPS65050, TPS65052 only
1.2
2.85
V(FB)
Feedback voltage for FB_LDO1,
FB_LDO2, FB_LDO3, and FB_LDO4
TPS65051, TPS65054 and TPS65056 only
IO
Maximum output current for LDO1,
LDO2
400
mA
Maximum output current for LDO3,
LDO4
200
mA
VO
I(SC)
(1)
(2)
8
1
V
V
LDO1 short-circuit current limit
VLDO1 = GND
750
mA
LDO2 short-circuit current limit
VLDO2 = GND
850
mA
LDO3 and LDO4 short-circuit current
limit
VLDO3 = GND, VLDO4 = GND
420
mA
Dropout voltage at LDO1
IO = 400 mA, VINLDO = 3.4 V
400
mV
Dropout voltage at LDO2
IO = 400 mA, VINLDO = 1.8 V
280
mV
Dropout voltage at LDO3, LDO4
IO = 200 mA, VINLDO = 1.8 V
280
mV
Output voltage specification does not include tolerance of external voltage programming resistors.
In Power Save Mode, operation is typically entered at IPSM = VI / 32 Ω.
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Electrical Characteristics (continued)
VCC = VINDCDC1/2 = 3.6 V, EN = VCC, MODE = GND, L = 2.2 μH, CO = 10 μF. TA = -40°C to 85°C, typical values are at TA =
25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ilkg
Leakage current from VinLDOx to
VLDOx
LDO enabled, VINLDO = 6.5 V, VO = 1 V,
at TA = 140°C
VO
Output voltage accuracy for LDO1,
LDO2, LDO3, LDO4
IO = 10 mA
–2%
1%
Line regulation for LDO1, LDO2,
LDO3, LDO4
VINLDO1,2 = VLDO1,2 + 0.5 V (min. 2.5 V) to 6.5V,
VINLDO3,4 = VLDO3,4 + 0.5 V (minimum 2.5 V) to
6.5 V,
IO = 10 mA
–1%
1%
Load regulation for LDO1, LDO2,
LDO3, LDO4
IO = 0 mA to 400 mA for LDO1, LDO2
IO = 0 mA to 200 mA for LDO3, LDO4
–1%
1%
Regulation time for LDO1, LDO2,
LDO3, LDO4
Load change from 10% to 90%
10
μs
PSRR
Power supply rejection ratio
f = 10 kHz; IO = 50 mA; VI = VO + 1 V
70
dB
R(DIS)
Internal discharge resistor at VLDO1,
VLDO2, VLDO3, VLDO4
active when LDO is disabled
350
R
Thermal shutdown
Increasing junction temperature
140
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
3
μA
7.6 Dissipation Ratings
PACKAGE
RθJA
RSM
(1)
(1)
POWER RATING
TA ≤ 25°C
DERATING FACTOR
ABOVE TA = 25°C
POWER RATING
TA = 70°C
POWER RATING
TA = 85°C
1.7 W
17 mW/K
0.95 W
0.68 W
58 K/W
The thermal resistance junction to case of the RSM package is 4 K/W measured on a high K board
7.7 Typical Characteristics
100
100
90
90
80
70
5V
60
4.2 V
50
3.8 V
70
Efficiency − %
Efficiency − %
80
3.4 V
40
30
20
10
0
0.0001
3.8 V
5V
60
50
3.4 V
4.2 V
40
30
VO = 3.3 V
o
TA = 25 C
PWM/PFM Mode
0.1
0.001
0.01
IO − Output Current − A
1
Figure 1. Efficiency vs Output Current
Copyright © 2007–2017, Texas Instruments Incorporated
VO = 3.3 V
o
TA = 25 C
PWM Mode
20
10
10
0
0.0001
0.1
0.001
0.01
IO − Output Current − A
1
10
Figure 2. Efficiency vs Output Current
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Typical Characteristics (continued)
100
100
3.3 V
90
90
80
80
70
3.8 V
60
Efficiency − %
Efficiency − %
70
VO = 1.3 V
o
TA = 25 C
PWM Mode
4.2 V
50
5V
40
30
3.8 V
60
5V
50
3.3 V
40
4.2 V
30
20
20
VO = 1.3 V
o
TA = 25 C
PFM Mode
10
0
0.0001
10
0.1
0.001
0.01
IO − Output Current − A
1
0
0.0001
Figure 3. Efficiency vs Output Current
0.1
0.001
0.01
IO − Output Current − A
1
Figure 4. Efficiency vs Output Current
100
90
Rejection Ratio − dB
80
70
60
50
40
30
20
10
0
10
100
100k
10k
1k
f − Frequency − Hz
1M
10M
Figure 5. Power Supply Rejection Ratio vs Frequency
10
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8 Detailed Description
8.1 Overview
The TPS6505x devices have 2 DC-DC buck converters and 4 LDOs. Each DC-DC and LDO have their own
enable pins, allowing external sequence control of the PMU rails. The TPS6505x devices, (except the TPS65050
device), have a RESET feature that is generated from a THRESHOLD comparator. This RESET signal can be
used to reset or warn of power shutdown to the embedded mircocontroller or processor. The TPS65050 device
has a push-button feature for reset and sequence control. This feature can be used to shut down and start the
converter with a single push on a button by connecting the PB_OUT output to the enable input of the converters.
The TPS6505x devices make power system integration easy for a variety of embedded processors or FPGAs.
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8.2 Functional Block Diagrams
VINDCDC1/2
1
VCC
Vbat
22 …F
L1
1 …F
Cff
R1
DCDC1 (I/O)
ENABLE
Step-Down
Converter
600 mA
EN_DCDC1
10 …F
FB_DCDC1
R2
PGND1
MODE
DEFLDO1
DEFLDO2
L2
Interface
DEFLDO3
DCDC2 (core)
R3
VDCDC2
DEFLDO4
ENABLE
Step-Down
Converter
600 mA
EN_DCDC2
10 …F
DEFDCDC2
R4
PGND2
VIN
VIN_LDO1
4.7 …F
VLDO2
VIN_LDO2
VLDO2
400-mA LDO
EN_LDO2
ENABLE
VIN
400-mA LDO
EN_LDO1
ENABLE
VIN
VLDO1
VLDO1
4.7 …F
VIN_LDO3/4
ENABLE
VLDO3
VLDO3
200-mA LDO
EN_LDO3
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
Vbat
I/O Voltage
200-mA LDO
2.2 …F
R19
PB_OUT
Flip-flop with
32-ms debounce
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Figure 6. TPS65050 Block Diagram
12
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Functional Block Diagrams (continued)
1
Vbat
VINDCDC1/2
VCC
22 …F
L1
1 …F
Cff
R1
DCDC1 (I/O)
ENABLE
Step-Down
Converter
1A
EN_DCDC1
R2
PGND1
L2
MODE
DCDC2 (core)
ENABLE
10 …F
FB_DCDC1
Step-Down
Converter
600 mA
EN_DCDC2
R3
VDCDC2
10 …F
DEFDCDC2
R4
PGND2
VIN
ENABLE
VIN_LDO1
VLDO1
VLDO1
400-mA LDO
EN_LDO1
R5
FB1
R6
VIN
ENABLE
VLDO2
VIN_LDO2
VLDO2
400-mA LDO
EN_LDO2
R5
FB2
R6
VIN
ENABLE
4.7 …F
VIN_LDO3/4
4.7 …F
VLDO3
VLDO3
200-mA LDO
EN_LDO3
R9
FB3
R10
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
200-mA LDO
THRESHOLD
R11
I/O Voltage
FB4
R12 2.2 …F
R19
RESET
RESET
HYSTERESIS
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Figure 7. TPS65051 Block Diagram
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Functional Block Diagrams (continued)
1
Vbat
VINDCDC1/2
VCC
22 …F
L1
1 …F
Cff
R1
DCDC1 (I/O)
ENABLE
Step-Down
Converter
1A
EN_DCDC1
10 …F
FB_DCDC1
R2
PGND1
MODE
DEFLDO1
DEFLDO2
L2
Interface
DEFLDO3
DCDC2 (core)
R3
VDCDC2
DEFLDO4
ENABLE
Step-Down
Converter
600 mA
EN_DCDC2
10 …F
DEFDCDC2
R4
PGND2
VIN
ENABLE
VIN
ENABLE
VIN
ENABLE
VIN_LDO1
VLDO1
VLDO1
400-mA LDO
EN_LDO1
4.7 …F
VLDO2
VIN_LDO2
VLDO2
400-mA LDO
EN_LDO2
4.7 …F
VIN_LDO3/4
VLDO3
VLDO3
200-mA LDO
EN_LDO3
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
I/O Voltage
200-mA LDO
THRESHOLD
2.2 …F
R19
RESET
RESET
HYSTERESIS
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Figure 8. TPS65052 Block Diagram
14
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Functional Block Diagrams (continued)
1
Vbat
VINDCDC1/2
VCC
22 …F
L1
1 …F
Cff
R1
DCDC1 (I/O)
ENABLE
EN_DCDC1
R2
PGND1
L2
MODE
VDCDC2
DCDC2 (core)
ENABLE
10 …F
FB_DCDC1
Step-Down
Converter
600 mA
Step-Down
Converter
600 mA
EN_DCDC2
10 …F
DEFDCDC2
1.3 V / 1.05 V
PGND2
VIN
ENABLE
VIN_LDO1
VLDO1
VLDO1
R5
400-mA LDO
EN_LDO1
FB1
R6
VIN
ENABLE
VLDO2
VIN_LDO2
VLDO2
R5
400-mA LDO
EN_LDO2
FB2
R6
VIN
ENABLE
4.7 …F
VIN_LDO3/4
4.7 …F
VLDO3
VLDO3
R9
200-mA LDO
EN_LDO3
FB3
R10
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
R11
200-mA LDO
THRESHOLD
FB4
I/O Voltage
R12 2.2 …F
R19
RESET
RESET
HYSTERESIS
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Figure 9. TPS65054 Block Diagram
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Functional Block Diagrams (continued)
1
Vbat
VINDCDC1/2
VCC
22 …F
L1
1 …F
Cff
R1
DCDC1 (I/O)
ENABLE
EN_DCDC1
R2
PGND1
L2
MODE
VDCDC2
DCDC2 (core)
ENABLE
10 …F
FB_DCDC1
Step-Down
Converter
600 mA
Step-Down
Converter
600 mA
EN_DCDC2
10 …F
DEFDCDC2
1 V / 1.3 V
PGND2
VIN
ENABLE
VIN_LDO1
VLDO1
VLDO1
R5
400-mA LDO
EN_LDO1
FB1
R6
VIN
ENABLE
VLDO2
VIN_LDO2
VLDO2
R5
400-mA LDO
EN_LDO2
FB2
R6
VIN
ENABLE
4.7 …F
VIN_LDO3/4
4.7 …F
VLDO3
VLDO3
R9
200-mA LDO
EN_LDO3
FB3
R10
2.2 …F
BP
0.1 …F
ENABLE
VLDO4
EN_LDO4
VLDO4
R11
200-mA LDO
THRESHOLD
FB4
I/O Voltage
R12 2.2 …F
R19
RESET
RESET
HYSTERESIS
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Figure 10. TPS65056 Block Diagram
16
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8.3 Feature Description
8.3.1 Operation of DCDC Converters
The TPS6505x devices include each two synchronous step-down converters. The converters operate with 2.25MHz (typical) fixed frequency pulse width modulation (PWM) at moderate to heavy load currents. At light load
currents, the converters automatically enter Power Save Mode and operate with PFM (Pulse Frequency
Modulation).
During PWM operation the converters use a unique fast response voltage mode controller scheme with input
voltage feed-forward to achieve good line and load regulation allowing the use of small ceramic input and output
capacitors. At the beginning of each clock cycle initiated by the clock signal, the P-channel MOSFET switch is
turned on, and the inductor current ramps up until the current comparator trips, and the control logic turns off the
switch. The current limit comparator turns off the switch if the current limit of the P-channel switch is exceeded.
After the adaptive dead time, which prevents shoot through current, the N-channel MOSFET rectifier is turned
on, and the inductor current ramps down. The next cycle is initiated by the clock signal turning off the N-channel
rectifier, and turning on the on the P-channel switch.
The two DC-DC converters operate synchronized to each other, with converter 1 as the master. A 180° phase
shift between converter 1 and converter 2 decreases the input RMS current. Therefore, smaller input capacitors
can be used.
8.3.1.1 DCDC1 Converter
The converter 1 output voltage is set by an external resistor divider connected to FB_DCDC1 pin for the
TPS65050 device, the TPS65051 device, and the TPS65054 device. For the TPS65052 device, the output
voltage is fixed to 3.3 V and this pin needs to be directly connected to the output. See Application and
Implementation for more details. The maximum output current on DCDC1 is 600 mA for the TPS65050 and
TPS65054 devices. For the TPS65051 device, the TPS65052 device, and the TPS65056 device, the maximum
output current is 1 A.
8.3.1.2 DCDC2 Converter
The VDCDC2 pin must be directly connected to the DCDC2 converter output voltage. The DCDC2 converter
output voltage is selected through the DEFDCDC2 pin.
For the TPS65050 and TPS65051 devices, the output voltage is set with an external resistor divider. Connect the
DEFDCDC2 pin to the external resistor divider.
For the TPS65052, TPS65054, and TPS65056 devices, the The DEFDCDC2 pin can either be connected to
GND, or to VCC. The converter 2 output voltage defaults to:
DEVICE
DEFDCDC2 = LOW
TPS65052 , TPS65056
1V
DEFDCDC2 = HIGH
1.3 V
TPS65054
1.3 V
1.05 V
8.3.2 Power-Save Mode
The Power-Save Mode is enabled with the Mode pin set to 0. If the load current decreases, the converters enters
Power-Save Mode operation automatically. During Power-Save Mode, the converters operate with reduced
switching frequency in PFM mode, and with a minimum quiescent current to maintain high-efficiency. The
converter positions the output voltage 1% above the nominal output voltage. This voltage positioning feature
minimizes voltage drops caused by a sudden load step.
To optimize the converter efficiency at light load, the average current is monitored. If in PWM mode, the inductor
current remains below a certain threshold, then Power-Save Mode is entered. The typical threshold is calculated
according to Equation 1.
VINDCDC
I(PFM_enter) =
32 W
A.
Average output current threshold to enter PFM mode.
I(PSMDCDC_leave)
(1)
VINDCDC
=
24 W
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Average output current threshold to leave PFM mode.
(2)
During the Power-Save Mode, the output voltage is monitored with a comparator. As the output voltage falls
below the skip comparator threshold (skip comp), the P-channel switch turns on, and the converter effectively
delivers a constant current. If the load is below the delivered current, the output voltage rises until the skip comp
threshold is crossed again, then all switching activity ceases, reducing the quiescent current to a minimum until
the output voltage has dropped below the threshold. If the load current is greater than the delivered current, the
output voltage falls until it crosses the skip comparator low (Skip Comp Low) threshold set to 1% below nominal
VO, then Power-Save Mode is exited, and the converter returns to PWM mode
These control methods reduce the quiescent current to 12 μA per converter, and the switching frequency to a
minimum, achieving the highest converter efficiency. The PFM mode operates with low output voltage ripple. The
ripple depends on the comparator delay, and the size of the output capacitor; increasing capacitor values
decreases the output ripple voltage.
The Power-Save Mode can be disabled by driving the MODE pin high. In forced PWM mode, both converters
operate with fixed frequency PWM mode regardless of the load.
8.3.3 Dynamic Voltage Positioning
This feature reduces the voltage undershoots and overshoots at load steps from light to heavy load and vice
versa. It is activated in Power-Save Mode operation when the converter runs in PFM Mode. It provides more
headroom for both, the voltage drop at a load step and the voltage increase at a load throw-off. This improves
load transient behavior.
At light loads, in which the converter operate in PFM Mode, the output voltage is regulated typically 1% greater
than the nominal value. In the event of a load transient from light load to heavy load, the output voltage drops
until it reaches the skip comparator low threshold set to –1% below the nominal value and enters PWM mode.
During a release from heavy load to light load, the voltage overshoot is also minimized due to active regulation
turning on the N-channel switch.
Smooth
Increased Load
+1%
PFM Mode
Light Load
Fast Load Transient
PFM Mode
Light Load
VOUT_NOM
PFM Mode
Medium/Heavy Load
PFM Mode
Medium/Heavy Load
-1%
COMP_LOW Threshold
Figure 11. Dynamic Voltage Positioning
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8.3.4 Soft Start
The two converters have an internal soft start circuit that limits the inrush current during start-up. During soft
start, the output voltage ramp up is controlled as shown in Figure 12.
EN
95%
5%
VOUT
tStart
tRAMP
Figure 12. Soft Start
8.3.5 100% Duty Cycle Low Dropout Operation
The converters offer a low input to output voltage difference while still maintaining operation with the use of the
100% duty cycle mode. In this mode, the P-channel switch is constantly turned on. This is useful in batterypowered applications to achieve longest operation time by taking full advantage of the whole battery voltage
range (that is, the minimum input voltage to maintain regulation depends on the load current and output voltage)
and can be calculated using Equation 3.
VI (min) = VO (max) + IO (max) x (rDS(on) (max) + RL)
where
•
•
•
•
IO max = maximum output current plus inductor ripple current.
rDS(on) max = maximum P-channel switch rDS(on).
RL = DC resistance of the inductor.
VO (max) = nominal output voltage plus maximum output voltage tolerance.
(3)
8.3.6 Undervoltage Lockout
The undervoltage lockout circuit prevents the device from malfunctioning at low input voltages and from
excessive discharge of the battery and disables all internal circuitry. The undervoltage lockout threshold, which is
sensed at the VCC pin, is typically 1.8 V, 2 V (maximum).
8.3.7 Mode Selection
The MODE pin allows mode selection between forced PWM Mode and Power-Safe Mode for both converters.
Connecting this pin to GND enables the automatic PWM and power save mode operation. The converters
operates in fixed frequency PWM mode at moderate to heavy loads and in the PFM mode during light loads,
maintaining high-efficiency over a wide load current range.
Pulling the MODE pin high forces both converters to operate constantly in the PWM mode even at light load
currents. The advantage is the converters operate with a fixed frequency that allows simple filtering of the
switching frequency for noise sensitive applications. In this mode, the efficiency is lower compared to the PowerSave Mode during light loads. For additional flexibility, it is possible to switch from Power-Save Mode to forced
PWM mode during operation. This allows efficient power management by adjusting the operation of the converter
to the specific system requirements.
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8.3.8 Enable
To start up each converter independently, the device has a separate enable pin for each DC-DC converter and
for each LDO. If EN_DCDC1, EN_DCDC2, EN_LDO1, EN_LDO2, EN_LDO3, EN_LDO4 are set to high, the
corresponding converter starts up with soft start as previously described.
Pulling the enable pin low forces the device into shutdown, with a shutdown quiescent current as defined in
Electrical Characteristics. In this mode, the P and N-Channel MOSFETs are turned off, the and the entire internal
control circuitry is switched off. If disabled, the outputs of the LDOs are pulled low by internal 350-Ω resistors,
actively discharging the output capacitor. For proper operation, the enable pins must be terminated and must not
be left unconnected.
8.3.9
RESET
The TPS65051, TPS65052, TPS65054, and TPS65056 devices contain circuitry that can generate a reset pulse
for a processor with a 100-ms delay time. The input voltage at a comparator is sensed at an input called
threshold. When the voltage exceeds the threshold, the output goes high with a 100-ms delay time. A hysteresis
can be defined with an external resistor connected to the hysteresis input. This circuitry is functional as soon as
the supply voltage at VCC exceeds the undervoltage lockout threshold. Therefore, the TPS6505x devices have a
shutdown current (all DC-DC converters and LDOs are off) of 9 μA to supply bandgap and comparator.
Vbat
HYSTERESIS
RESET
THRESHOLD
+
-
100 ms
Delay
Vref = 1 V
Vbat
THRESHOLD
THRESHOLD - HYSTERESIS
Comparator
Output (Internal)
tNRESET
RESET
Figure 13. RESET Pulse Circuit
8.3.10 Push-Button ON-OFF (PB-ON-OFF)
The TPS65050 device provides a PB-ON-OFF functionality instead of supervising a voltage with the threshold
and hysteresis inputs. The output at PB_OUT is held low after voltage is applied at VCC. Only after the input at
PB-IN is pulled high once, the output driver at PB_OUT goes to its inactive state, driven high with its external
pullup resistor. Further low-high pulses at PB-IN toggles the status of the PB_OUT output, and can be used to
shut down and start the converter with a single push on a button by connecting the PB_OUT output to the enable
input of the converters.
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Vbat
PB_IN
Debounce
32 ms
JKFlipflop
Default
Low
PB_OUT
Min Pulse
Width 32 ms
PB_IN
PB_OUT
32 ms
Figure 14. Push-Button Circuit
8.3.11 Short-Circuit Protection
All outputs are short-circuit protected with a maximum output current as defined in the Electrical Characteristics.
8.3.12 Thermal Shutdown
As soon as the junction temperature, TJ, exceeds 150°C (typically) for the DC-DC converters, the device goes
into thermal shutdown. In this mode, the P and N-Channel MOSFETs are turned off. The device continues its
operation when the junction temperature falls below the thermal shutdown hysteresis again. A thermal shutdown
for one of the DC-DC converters disables both converters simultaneously.
The thermal shutdown temperature for the LDOs are set to typically 140°C. Therefore, a LDO, which may be
used to power an external voltage, never heats up the chip high enough to turn off the DC-DC converters. If one
LDO exceeds the thermal shutdown temperature, all LDOs turns off simultaneously.
8.3.13 Low Dropout Voltage Regulators
The low dropout voltage regulators are designed to operate well with small ceramic input and output capacitors.
They operate with input voltages down to 1.5 V. The LDOs offer a maximum dropout voltage of 400 mV (LDO1)
and 280 mV (LDO2, LDO3, and LDO4) at rated output current. Each LDO supports a current limit feature. The
LDOs are enabled by the EN_LDO1, ENLDO2, EN_LDO3 and EN_LDO4 pin. In the TPS65050 and TPS65052
devices, the output voltage of the LDOs is set using 4 pins. The DEFLDO1 to DEFLDO4 pins can either be
connected to GND or Vbat (VCC) to define a set of output voltages for LDO1 to LDO4 according to table 1.
Connecting the DEFLDOx pins to a voltage different from GND or VCC causes increased leakage current into
VCC. In the TPS65051 and TPS65054 devices, the output voltage of the LDOs is set using external resistor
dividers.
According to Table 1, The TPS65050 and TPS65052 devices default voltage options adjustable with
DEFLDO4…DEFLDO1.
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Table 1. Default Options
DEFLDO1
DEFLDO2
DEFLDO3
DEFLDO4
VLDO1
VLDO2
VLDO3
VLDO4
400 mA LDO
400 mA LDO
200 mA LDO
200 mA LDO
1.8 V to 5.5 V
Input
1.8 V to 5.5 V
Input
1.5 V to 5.5 V
Input
1.5 V to 5.5 V
Input
0
0
0
0
3.3 V
3.3 V
1.85 V
1.85 V
0
0
0
1
3.3 V
3.3 V
1.5 V
1.5 V
0
0
1
0
3.3 V
2.85 V
2.85 V
2.7 V
0
0
1
1
3.3 V
2.85 V
2.85 V
2.5 V
0
1
0
0
3.3 V
2.85 V
2.85 V
1.85 V
0
1
0
1
3.3 V
2.85 V
1.85 V
1.85 V
0
1
1
0
3.3 V
2.85 V
1.5 V
1.5 V
0
1
1
1
3.3 V
2.85 V
1.5 V
1.3 V
1
0
0
0
3.3 V
2.85 V
1.1 V
1.3 V
1
0
0
1
2.85 V
2.85 V
1.85 V
1.85 V
1
0
1
0
2.7 V
3.3 V
1.2 V
1.2 V
1
0
1
1
2.5 V
3.3 V
1.5 V
1.5 V
1
1
0
0
2.5 V
3.3 V
1.5 V
1.3 V
1
1
0
1
1.85 V
1.85 V
1.35 V
1.35 V
1
1
1
0
1.8 V
2.5 V
3.3 V
2.85 V
1
1
1
1
1.2 V
1.8 V
1.1 V
1.3 V
8.4 Device Functional Modes
The TPS6505x devices are either in the ON or the OFF mode. The OFF mode is entered when the voltage on
VCC is below the UVLO threshold, 1.8 V (typically). Once the voltage at VCC has increased above UVLO, the
device enters ON mode. In the ON mode, the DCDCs and LDOs are available for use.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
This device integrates two step-down converters and four LDOs, which can be used to power the voltage rails
needed by a processor or any other application. The PMIC can be controlled through the ENABLE and MODE
pins or sequenced from the VIN using RC delay circuits. There is a logic output, RESET, provide the application
processor or load a logic signal indicating power good or reset.
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9.2 Typical Application
1
Vbat
VCC
VINDCDC1/2
1 …F
L1
Vbat
10 …F
2.2 µH
Cff
Vout1 = 2.85 V
R1
10 …F
FB_DCDC1
MODE
GND
R2
DEFLDO1
GND
PGND1
DEFLDO2
GND
L2
DEFLDO3
Vbat
DEFLDO4
Vbat
Vout2 = 1.575 V
2.2 µH
R3
VDCDC2
10 …F
DEFDCDC2
Vbat
R4
PGND2
PB_IN
Vbat
VLDO1
TPS65050
VLDO1 = 3.3 V
PB_OUT
4.7 …F
EN_DCDC1
VLDO2
EN_LDO1
VLDO2 = 2.5 V
VDCDC1
4.7 …F
EN_DCDC2
EN_LDO2
VLDO3
VLDO3 = 1.5 V
EN_LDO3
EN_LDO4
Vbat
Vbat
Vout1
2.2 …F
VIN_LDO1
VLDO4
VLDO4 = 1.3 V
VIN_LDO2
BP
VIN_LDO3/4
2.2 …F
0.1 …F
AGND
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Figure 15. Typical Example Application With PB_ON/OFF Circuit
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Typical Application (continued)
9.2.1 Design Requirements
Table 2 lists the design requirements for this example.
Table 2. Design Parameters
PARAMETER
VALUE
DCDC1 and DCDC2 input voltage
2.5 V to 6 V
DCDC1 output voltage
2.85 V
DCDC1 output current
600 mA
DCDC2 output voltage
1.575 V
DCDC2 output current
600 mA
LDO1 output voltage
3.3 V
LDO1 output current
400 mA
LDO2 output voltage
2.5 V
LDO2 output current
400 mA
LDO3 output voltage
1.5 V
LDO3 output current
200 mA
LDO4 output voltage
1.3 V
LDO4 output current
200 mA
9.2.2 Detailed Design Procedure
9.2.2.1 Output Voltage Setting
9.2.2.1.1 Converter 1 (DCDC1)
The output voltage of converter 1 can be set by an external resistor network. The output voltage can be
calculated using Equation 4.
R1
VO = Vref x 1 +
R2
(4)
(
)
with an internal reference voltage Vref, 0.6 V .
TI recommends setting the total resistance of R1 + R2 to less than 1 MΩ. The resistor network connects to the
input of the feedback amplifier, therefore, requiring a small feedforward capacitor in parallel to R1. A typical value
of 47 pF is sufficient.
For the TPS65052 and TPS65056 devices, the DCDC1 output voltage is internally fixed to 3.3 V.
9.2.2.1.2 Converter 2 (DCDC2)
The output voltage of converter 2 can be selected as following:
• Adjustable output voltage defined with external resistor network on pin DEFDCDC2. This option is available
for the TPS65050 and TPS65051 devices.
• Two default fixed output voltages are selectable by pin DEFDCDC2 (see Table 3). This option is available for
the TPS65052, TPS65054, and TPS65056 devices.
Table 3. Default Fixed Output Voltages
Converter 2
DEFDCDC2 = low
DEFDCDC2 = high
TPS65050
—
—
TPS65051
—
—
TPS65052
1V
1.3 V
TPS65054
1.3 V
1.05 V
TPS65056
1V
1.3 V
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The adjustable output voltage can be calculated similarly to the DCDC1 converter. Setting the total resistance of
R3 + R4 to less than 1 MΩ is recommended. Route the DEFDCDC2 line separate from noise sources, such as
the inductor or the L2 line. The VDCDC2 line needs to be directly connected to the output capacitor. As the
VDCDC2 line is the feedback to the internal amplifier, no feedforward capacitor at R3 is needed.
Using an external resistor divider at DEFDCDC2:
1W
VCC
Vbat
1 mF
VDCDC2
VO
L2
VINDCDC1/2
L
CI
CO
ENDCDC2
R3
DEFDCDC2
R4
AGND PGND
Figure 16. External Resistor Divider
V(DEFDCDC2) = 0.6 V
VO = V(DEFDCDC2) x
R3 + R4
R4
R3 = R4 x
(
VO
V(DEFDCDC2)
)
- R4
(5)
See Table 4 for typical resistor values:
Table 4. Typical Resistor Values
OUTPUT VOLTAGE
R1
R2
NOMINAL VOLTAGE
Typical CFF
3.3 V
680 kΩ
150 kΩ
3.32 V
47 pF
3V
510 kΩ
130 kΩ
2.95 V
47 pF
2.85 V
560 kΩ
150 kΩ
2.84 V
47 pF
2.5 V
510 kΩ
160 kΩ
2.51 V
47 pF
1.8 V
300 kΩ
150 kΩ
1.8 v
47 pF
1.6 V
200 kΩ
120 kΩ
1.6 V
47 pF
1.5 V
300 kΩ
200 kΩ
1.5 V
47 pF
1.2 V
330 kΩ
330 kΩ
1.2 V
47 pF
9.2.2.2 Output Filter Design (Inductor and Output Capacitor)
9.2.2.2.1 Inductor Selection
The two converters operate with 2.2-μH output inductor. Larger or smaller inductor values can be used to
optimize the performance of the device for specific operation conditions. The selected inductor has to be rated for
its DC resistance and saturation current. The DC resistance of the inductance directly influences the efficiency of
the converter. Therefore, an inductor with lowest DC resistance should be selected for highest efficiency. The
minimum inductor value is 1.5 μH, but an output capacitor of 22 μF minimum is needed in this case. For an
output voltage above 2.8 V, TI recommends an inductor value of 3.3 μH (minimum). Lower values result in an
increased output voltage ripple in PFM mode.
Use Equation 6 to calculate the maximum inductor current under static load conditions. The saturation current of
the inductor should be rated greater than the maximum inductor current as calculated with Equation 6. TI
recommends this because during heavy load transient the inductor current rises above the calculated value.
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1 DIL = VO x
VO
VI
IL(max) = IO (max) +
L x ¦
DIL
2
where
•
•
•
•
f = Switching Frequency (2.25-MHz typical)
L = Inductor Value
Δ IL= Peak-to-peak inductor ripple current
ILmax = Maximum Inductor current
(6)
The highest inductor current occurs at maximum VI. Open core inductors have a soft saturation characteristic,
and they can normally handle greater inductor currents versus a comparable shielded inductor.
A more conservative approach is to select the inductor current rating just for the maximum switch current of the
corresponding converter. Consideration must be given to the difference in the core material from inductor to
inductor which has an impact on the efficiency especially at high switching frequencies. See Table 5 and the
typical applications for possible inductors.
Table 5. Tested Inductors
INDUCTOR TYPE
INDUCTOR VALUE
SUPPLIER
LPS3010
2.2 μH
Coilcraft
LPS3015
3.3 μH
Coilcraft
LPS4012
2.2 μH
Coilcraft
VLF4012
2.2 μH
TDK
9.2.2.2.2 Output Capacitor Selection
The advanced Fast Response voltage mode control scheme of the two converters allows the use of small
ceramic capacitors with a value of 22-μF (typical) without having large output voltage undershoots and
overshoots during heavy load transients. Ceramic capacitors having low ESR values result in lowest output
voltage ripple, and are recommended.
If ceramic output capacitors are used, the capacitor RMS ripple current rating always meets the application
requirements. For completeness, the RMS ripple current is calculated as:
VO
1 VI
1
x
I(RMSCout) = VO x
2 x Ö3
L x ¦
(7)
At nominal load current, the inductive converters operate in PWM mode, and the overall output voltage ripple is
the sum of the voltage spike caused by the output capacitor ESR plus the voltage ripple caused by charging and
discharging the output capacitor:
VO
1 VI
1
x
+ ESR
DVO = VO x
8 x CO x ¦
L x ¦
(
)
where
•
the highest output voltage ripple occurs at the highest input voltage VI
(8)
At light load currents, the converters operate in Power-Save Mode and the output voltage ripple is dependent on
the output capacitor value. The output voltage ripple is set by the internal comparator delay and the external
capacitor. The typical output voltage ripple is less than 1% of the nominal output voltage.
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9.2.2.2.3 Input Capacitor Selection
Because of the nature of the buck converter having a pulsating input current, a low ESR input capacitor is
required for best input voltage filtering and minimizing the interference with other circuits caused by high input
voltage spikes. The converters need a ceramic input capacitor of 10 μF. The input capacitor can be increased
without any limit for better input voltage filtering.
Table 6. Possible Capacitors
CAPACITOR VALUE
SIZE
SUPPLIER
TYPE
2.2 μF
0805
TDK C2012X5R0J226MT
Ceramic
2.2 μF
0805
Taiyo Yuden JMK212BJ226MG
Ceramic
10 μF
0805
Taiyo Yuden JMK212BJ106M
Ceramic
10 μF
0805
TDK C2012X5R0J106M
Ceramic
10 μF
0603
Taiyo Yuden JMK107BJ106MA
Ceramic
9.2.2.3 Low Drop Out Voltage Regulators (LDOs)
The output voltage of all 4 LDOs in the TPS65051, TPS65054, and TPS65056 devices are set by an external
resistor network. The output voltage is calculated using Equation 9.
R5
VO = Vref x 1 +
R6
(
)
where
•
an internal reference voltage, Vref, 1 V (typical)
(9)
TI recommends setting the total resistance of R5 + R6 to less than 1 MΩ. Typically, there is no feedforward
capacitor needed at the voltage dividers for the LDOs.
VO = V(FB_LDOs) x
R5 + R6
R6
R5 = R6 x
(
VO
V(FB_LDOs)
)
- R6
(10)
Typical resistor values:
Table 7. Typical Resistor Values
OUTPUT VOLTAGE
R5
R6
NOMINAL VOLTAGE
3.3 V
300 kΩ
130 kΩ
3.31 V
3V
300 kΩ
150 kΩ
3V
2.85 V
240 kΩ
130 kΩ
2.85 V
2.8 V
360 kΩ
200 kΩ
2.8 V
2.5 V
300 kΩ
200 kΩ
2.5 V
1.8 V
240 kΩ
300 kΩ
1.8 v
1.5 V
150 kΩ
300 kΩ
1.5 V
1.3 V
36 kΩ
120 kΩ
1.3 V
1.2 V
100 kΩ
510 kΩ
1.19 V
1.1 V
33 kΩ
330 kΩ
1.1 V
9.2.2.4 PB-ONOFF and Sequencing
The PB-ONOFF output can be used to enable one or several converters. After power up, the PB_OUT pin is low,
and pulls down the enable pins connected to PB_OUT; EN_DCDC1, and EN_LDO1 in Figure 15. When PB_IN is
pulled to VCC for longer than 32 ms, the PB_OUT pin is turned off, hence the enable pins pulled high using a
pullup resistor to VCC. This enables the DCDC1 converter and LDO1. The output voltage of DCDC1 (VOUT1) is
used as the enable signal for DCDC2 and LDO2 to LDO4. LDO1 with its output voltage of 3.3 V and LDO2 for an
output voltage of 2.5 V are powered from the battery (V(bat)) directly. To save power, the input voltage for the
lower voltage rails at LDO3 and LDO4 are derived from the output of the step-down converters, keeping the
voltage drop at the LDOs low to increase efficiency. As LDO3 and LDO4 are powered from the output of DCDC1,
the total output current on VOUT1, LDO3 and LDO4 must not exceed the maximum rating of DCDC1.
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Figure 17 shows the power-up timing for this example application.
Vbat
PB_IN
32 ms
EN_DCDC1
EN_LDO1
Vout1
VLDO1
32 ms
1.2V
170 ms
EN_DCDC2
EN_LDO3
EN_LDO4
EN_LDO2
Vout2
170 ms
VLDO2
VLDO3
VLDO4
Figure 17. Example Power-up Timing
9.2.2.5 RESET
The TPS65051, TPS65052, TPS65054, and TPS65056 devices contain a comparator that is used to supervise a
voltage connected to an external voltage divider, and generate a reset signal if the voltage is lower than the
threshold. The rising edge is delayed by 100 ms at the open-drain RESET output. The values for the external
resistors R13 to R15 are calculated as follows:
VL = lower voltage threshold
VL = lower voltage threshold
VREF = reference voltage (1 V)
(11)
(12)
(13)
Example:
• VL = 3.3 V
• VH = 3.4 V
Set R15 = 100 kΩ
→ R13 + R14 = 240 kΩ
→ R14 = 3.03 kΩ
→ R13 = 237 kΩ
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R13 R14
R14
§ V
R15 u ¨ H
© Vref
R15 u
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·
1¸
¹
VH VL
VL
(14)
Vout1
Vbat
R13
HYSTERESIS
R14
THRESHOLD
R15
1M
RESET
Figure 18. RESET Circuit
o
CH1 (VDCDC2 = 1.5 V)
20 mV/div
CH4 (IL DCDC1 = 600 mA)
200 mA/div
CH3 (IL DCDC2 = 600 mA)
CH4 (IL DCDC1 = 80 mA)
200 mA/div
CH3 (IL DCDC2 = 80 mA)
t − Time = 2 ms/div
Figure 19. Output Voltage Ripple PWM/PFM Mode = LOW
30
o
VI = 4.2 V, TA = 25 C
100 mA/div
CH2 (VDCDC2 = 1.5 V)
CH1 (VDCDC1 = 3.3 V)
100 mA/div
VI = 4.2 V, TA = 25 C
20 mV/div
CH1 (VDCDC1 = 3.3 V)
20 mV/div
20 mV/div
9.2.3 Application Curves
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t − Time = 500 ns/div
Figure 20. Output Voltage Ripple PWM Mode = HIGH
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VI = 3.6 V
TA = 25oC
CH1 (VLDO1)
Mode = Low
1 V/div
1 V/div
1 V/div
CH2 (VLDO2)
CH3 (VLDO3)
CH3
(VDCDC2 = 1.5 V)
1 V/div
CH4 (VLDO1)
EN
1 V/div
CH1 (EN)
5 V/div
5 V/div
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CH2
(VDCDC1 = 3.3 V)
Load DCDC1 = 600 mA
Load DCDC2 = 600 mA
1 V/div
1 V/div
CH4 (VLDO4)
t − Time = 200 ms/div
Figure 22. LDO1 to LDO4 Start-up Timing
50 mV/div
50 mV/div
ILDO1/2/3/4 = 100 mA
Mode = Low
t − Time = 20 ms/div
Figure 21. DCDC1 Start-up Timing
CH1 (VDCDC1)
VI = 3.6 V
TA = 25oC
CH1 (VDCDC1)
VI = 4.2 V
o
TA = 25 C
VI = 4.2 V
o
TA = 25 C
Mode = Low
Mode = High
CH2
I(DCDC1)
200 mA/div
VDCDC1 = 3.3 V
ENDCDC1 = High
ENDCDC2 = Low
Load Current = 60 mA to 540 mA
VDCDC1 = 3.3 V
ENDCDC1 = High
ENDCDC2 = Low
Load Current = 60 mA to 540 mA
t − Time = 100 ms/div
t − Time = 100 ms/div
Figure 23. DCDC1 Load Transient Response
Figure 24. DCDC1 Load Transient Response
CH1 (VDCDC2)
VI = 3.6 V
TA = 25oC
50 mV/div
50 mV/div
200 mA/div
CH2
I(DCDC1)
CH1 (VDCDC2)
VI = 3.6 V
o
TA = 25 C
Mode = High
Mode = Low
VDCDC2 = 1.5 V
ENDCDC1 = Low
ENDCDC2 = High
Load Current = 60 mA to 540 mA
CH2
I(DCDC2)
200 mA/div
200 mA/div
CH2
I(DCDC2)
VDCDC2 = 1.5 V
ENDCDC1 = Low
ENDCDC2 = High
Load Current = 60 mA to 540 mA
t − Time = 100 ms/div
t − Time = 100 ms/div
Figure 25. DCDC2 Load Transient Response
Figure 26. DCDC2 Load Transient Response
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CH1
VIN (VDCDC1)
CH1
VIN (VDCDC2)
500 mV/div
500 mV/div
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
VI = 3.6 V to 4.5 V to 3.6 V
TA = 25oC
VDCDC1 = 3.3 V
ENDCDC1 = High
ENDCDC2 = Low
Load Current = 600 mA
20 mV/div
20 mV/div
Mode = High
CH2 (VDCDC1)
CH2 (VDCDC2)
VDCDC2 = 1.5 V
ENDCDC1 = Low
ENDCDC2 = High
Load Current = 600 mA
VI = 3.4 V to 4.4 V to 3.4 V
o
TA = 25 C
t − Time = 100 ms/div
t − Time = 100 ms/div
Figure 27. DCDC1 Line Transient Response
Figure 28. DCDC2 Line Transient Response
50 mV/div
50 mV/div
Mode = High
CH1 (VLDO1)
CH1 (VLDO4)
VI = 3.6 V
VLDO4 = 1.3 V
VLDO4 = 20 mA to 180 mA
o
TA = 25 C
VI = 3.6 V
TA = 25oC
CH2
I(LDO4)
200 mA/div
CH2
I(LDO1)
t − Time = 100 ms/div
t − Time = 100 ms/div
Figure 29. LDO1 Load Transient Response
Figure 30. LDO4 Load Transient Response
CH1
VIN (LDO1)
20 mV/div
500 mV/div
200 mA/div
VLDO1 = 3.3 V
VLDO1 = 40 mA to 360 mA
CH2 (VLDO1)
VI = 3.6 V to 4.2 V to 3.6 V
o
TA = 25 C
VLDO1 = 3.3 V
VLDO1 = 100 mA
Mode = High
t − Time = 100 ms/div
Figure 31. LDO1 Line Transient Response
32
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SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
10 Power Supply Recommendations
In addition to the values listed in the Recommended Operating Conditions table, additional recommendations for
the power supply are as follows:
• 1-μF bypass capacitor on VCC, located as close as possible to the VCC pin to ground.
• VCC and VINDCDC1/2 must be connected to the same voltage supply with minimal voltage difference.
• Input capacitors must be present on the VINDCDC1/2, VIN_LDO1, VINLDO2, and VIN_LDO3/4 supplies if
used.
• Output inductor and capacitors must be used on the outputs of the DC-DC converters if used.
• Output capacitors must be used on the outputs of the LDOs if used.
11 Layout
11.1 Layout Guidelines
•
•
•
•
•
•
•
The input capacitors for the DC-DC converters should be placed as close as possible to the VINDCDC1/2 pin
and the PGND1 and PGND2 pins.
The inductor of the output filter should be placed as close as possible to the device to provide the shortest
switch node possible, reducing the noise emitted into the system and increasing the efficiency.
Sense the feedback voltage from the output at the output capacitors to ensure the best DC accuracy.
Feedback should be routed away from noisy sources such as the inductor. If possible route on the opposing
side as the switch node and inductor and place a GND plane between the feedback and the noisy sources or
keepout underneath them entirely.
Place the output capacitors as close as possible to the inductor to reduce the feedback loop as much as
possible. This will ensure best regulation at the feedback point.
Place the device as close as possible to the most demanding or sensitive load. The output capacitors should
be placed close to the input of the load. This will ensure the best AC performance possible.
The input and output capacitors for the LDOs should be placed close to the device for best regulation
performance.
TI recommends using the common ground plane for the layout of this device. The AGND can be separated
from the PGND but, a large low parasitic PGND is required to connect the PGNDx pins to the CIN and
external PGND connections. If the AGND and PGND planes are separated, have one connection point to
reference the grounds together. Place this connection point close to the IC.
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www.ti.com
Cout
DCDC2 FB
R1 FB
R2 FB
11.2 Layout Example
C
CD
VD
2
Lout
Cin
L2
L1
Vin
Cin
DC
DC
1
FB
Lout
R2 FB
Cout
R1 FB
Figure 32. Layout Example from EVM for TPS6505x
34
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www.ti.com
SLVS710C – JANUARY 2007 – REVISED FEBRUARY 2017
12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 8. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS65050
Click here
Click here
Click here
Click here
Click here
TPS65051
Click here
Click here
Click here
Click here
Click here
TPS65052
Click here
Click here
Click here
Click here
Click here
TPS65054
Click here
Click here
Click here
Click here
Click here
TPS65056
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
TMS320, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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www.ti.com
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
36
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS65050RSMR
ACTIVE
VQFN
RSM
32
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
TPS
65050
Samples
TPS65050RSMT
ACTIVE
VQFN
RSM
32
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
TPS
65050
Samples
TPS65051RSMR
ACTIVE
VQFN
RSM
32
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TPS
65051
Samples
TPS65051RSMT
ACTIVE
VQFN
RSM
32
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TPS
65051
Samples
TPS65051RSMTG4
ACTIVE
VQFN
RSM
32
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TPS
65051
Samples
TPS65054RSMT
ACTIVE
VQFN
RSM
32
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TPS
65054
Samples
TPS65056RSMT
ACTIVE
VQFN
RSM
32
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TPS
65056
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of