Product
Folder
Order
Now
Support &
Community
Tools &
Software
Technical
Documents
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
TPS735 500-mA, Low Quiescent Current, Low Noise, High PSRR,
Low-Dropout Linear Regulator
1 Features
3 Description
•
•
•
•
The TPS735 low-dropout (LDO), low-power linear
regulator offers excellent AC performance with very
low ground current. High power-supply rejection ratio
(PSRR), low noise, fast start-up, and excellent line
and load transient responses are provided while
consuming a very low 45-μA (typical) ground current.
1
•
•
•
•
•
•
•
•
Input Voltage: 2.7 V to 6.5 V
500-mA Low-Dropout Regulator With EN
Low IQ: 45 μA
Multiple Output Voltage Versions Available:
– Fixed Outputs of 1.2 V to 4.3 V
– Adjustable Outputs from 1.25 V to 6 V
High PSRR: 68 dB at 1 kHz
Low Noise: 13.2 μVRMS
Fast Start-Up Time: 45 μs
Stable With a Ceramic, 2.2-μF, Low-ESR Output
Capacitor
Excellent Load and Line Transient Response
2% Overall Accuracy (Load, Line, and
Temperature, VOUT > 2.2 V)
Very Low Dropout: 280 mV at 500 mA
2-mm × 2-mm WSON-6 and
3-mm × 3-mm SON-8 Packages
2 Applications
•
•
•
•
Post DC-DC Converter Ripple Filtering
IP Network Cameras
Macro Base Stations
Thermostats
The TPS735 device is stable with ceramic capacitors
and uses an advanced BiCMOS fabrication process
to yield a typical dropout voltage of 280 mV at 500mA output. The TPS735 device uses a precision
voltage reference and feedback loop to achieve
overall accuracy of 2% (VOUT > 2.2 V) over all load,
line, process, and temperature variations. This device
is fully specified from TJ = –40°C to +125°C and is
offered in a low-profile, 3 mm × 3 mm SON-8
package and a 2 mm × 2 mm WSON-6 package.
Device Information(1)
PART NUMBER
PACKAGE
TPS735
BODY SIZE (NOM)
WSON (6)
2.00 mm × 2.00 mm
SON (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
Optional input capacitor, C ,
IN
to improve source
impedance, noise, and PSRR
VIN
IN
OUT
VOUT
TPS735
EN
VEN
GND
NR
2.2 µF
Ceramic
Optional bypass capacitor, C ,
NR
to reduce output noise
and increase PSRR
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagrams .....................................
Feature Description.................................................
Device Functional Modes........................................
10
10
11
12
8
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Applications ................................................ 13
9 Power Supply Recommendations...................... 16
10 Layout................................................................... 16
10.1
10.2
10.3
10.4
10.5
Layout Guidelines .................................................
Layout Example ....................................................
Power Dissipation .................................................
Estimating Junction Temperature .........................
Package Mounting ................................................
16
16
17
18
19
11 Device and Documentation Support ................. 20
11.1
11.2
11.3
11.4
11.5
Device Support......................................................
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
20
12 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision L (January 2015) to Revision M
Page
•
Updated data sheet text to latest data sheet and translation standards ............................................................................... 1
•
Changed "Ultra-Low Noise" to "Low Noise" in document title ............................................................................................... 1
•
Changed Low IQ from 46 μA to 45 μA in Features, Description, and Application Information sections. ................................ 1
•
Changed "Standard" to "Ceramic" in Features list ................................................................................................................. 1
•
Changed 6-pin package from "SON" to "WSON" in Features list ......................................................................................... 1
•
Deleted printers, WiFi®, WiMax Modules, cellular phones, smart phones and microprocessor power from
Applications section ............................................................................................................................................................... 1
•
Added post DC/DC ripple filtering, IP network cameras, macro base stations, and thermostats to Applications section ..... 1
•
Changed TA to TJ in Description section ............................................................................................................................... 1
•
Changed 6-pin package from "SON" to "WSON" in Description section .............................................................................. 1
•
Changed package in Device Information table from VSON (6) to WSON (6)........................................................................ 1
•
Changed 6-pin DRB package designator from "VSON" to "SON" in Pin Configurations and Functions section .................. 4
•
Changed 6-pin DRV package designator from "VSON" to "WSON" in Pin Configurations and Functions section .............. 4
•
Added "feedback resistor" parameter to Recommended Operating Conditions table ........................................................... 5
•
Changed DRV package designator from "VSON" to "WSON" in Thermal Information table ................................................ 6
•
Changed DRB package designator from "VSON" to "SON" in Thermal Information table ................................................... 6
•
Changed TPS735 Ground Pin Current (Disable) vs Temperature in Typical Characteristics section ................................... 8
•
Changed TPS735 Dropout Voltage vs Output Current in Typical Characteristics section..................................................... 8
•
Updated Equation 1 ............................................................................................................................................................. 14
•
Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 17 ..................................................................................... 15
•
Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 18 ..................................................................................... 15
•
Changed VOUT starting value to 0 V in Figure 19 ................................................................................................................ 15
•
Updated Equation 2 ............................................................................................................................................................. 17
•
Updated Equation 3 ............................................................................................................................................................. 17
•
Changed DRV package designator from "SON" to "WSON" in Measuring Points for TT and TB......................................... 19
2
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
Revision History (continued)
•
Deleted references to thermal information documents in Related Documentation section ................................................ 20
Changes from Revision K (August, 2013) to Revision L
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information sections ............................................................................................... 1
•
Added first bullet item in Features list ................................................................................................................................... 1
•
Changed fourth bullet item in Features list to "fixed outputs of 1.2 V" .................................................................................. 1
•
Changed eighth bullet item in Features list ........................................................................................................................... 1
•
Changed last bullet in Features list ....................................................................................................................................... 1
•
Changed last Applications list item ........................................................................................................................................ 1
•
Changed Pin Configuration and Functions section; updated table format and pin descriptions to meet new standards ..... 4
•
Changed CNR value notation from 0.01 µF to 10 nF throughout Electrical Characteristics.................................................... 7
•
Changed feedback voltage parameter values and measured test conditions ....................................................................... 7
•
Changed output current limit maximum specified value ........................................................................................................ 7
•
Changed power-supply rejection ratio typical specified values for 100 Hz, 10 kHz, and 100 kHz frequency test
conditions ............................................................................................................................................................................... 7
•
Added note (1) to Figure 1 .................................................................................................................................................... 8
•
Changed y-axis title for Figure 6 ............................................................................................................................................ 8
•
Changed y-axis title for Figure 7 ............................................................................................................................................ 8
•
Changed footnote for Figure 13............................................................................................................................................ 10
•
Changed reference to noise-reduction capacitor (CNR) to feed-forward capacitor (CFF) in Transient Response................. 11
•
Changed noise-reduction capacitor to feed-forward capacitor in Figure 16 ........................................................................ 13
•
Changed references to "noise-reduction capacitor" (CNR) to "feed-forward capacitor" (CFF) and section title from
"Feedback Capacitor Requirements" to "Feed-forward Capacitor Requirements" in Feed-Forward Capacitor
Requirements section ........................................................................................................................................................... 14
•
Changed CNR value notation from 0.01 µF to 10 nF in Output Noise section...................................................................... 14
Changes from Revision J (May, 2011) to Revision K
•
Page
Added last sentence to first paragraph of Startup and Noise Reduction Capacitor section ................................................ 11
Changes from Revision I (April, 2011) to Revision J
Page
•
Replaced the Dissipation Ratings with Thermal Information.................................................................................................. 6
•
Revised conditions for Typical Characteristics to include statement about TPS73525 device availability ............................ 8
•
Added Estimating Junction Temperature section ................................................................................................................. 18
•
Updated Power Dissipation section...................................................................................................................................... 19
Changes from Revision H (November, 2009) to Revision I
•
Page
Corrected typo in Electrical Characteristics table for VOUT specification, DRV package test conditions, VOUT ≤ 2.2V........... 7
Changes from Revision G (March 2009) to Revision H
Page
•
Revised bullet point in Features list to show very low dropout of 280 mV............................................................................. 1
•
Changed dropout voltage typical specification from 250mV to 280mV.................................................................................. 7
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
3
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
5 Pin Configuration and Functions
DRB Package
8-Pin SON With Exposed Thermal Pad
Top View
OUT
1
NC
2
FB,NR
3
GND
4
Thermal
Pad
8
IN
7
DRV Package
6-Pin WSON With Exposed Thermal Pad
Top View
OUT
1
6
IN
NC
FB,NR
2
Thermal
5
Pad
NC
6
NC
GND
3
4
EN
5
EN
Not to scale
NC - No internal connection
Not to scale
Pin Functions
PIN
NAME
NO
I/O
DESCRIPTION
DRV
DRB
IN
6
8
I
GND
3
4
—
EN
4
5
I
NR
2
3
—
FB
2
3
I
This pin is only available for the adjustable version. The FB pin is the input to the control-loop
error amplifier, and is used to set the output voltage of the device. This pin must not be left
floating.
OUT
1
1
O
This pin is the output of the regulator. A small, 2.2-μF ceramic capacitor is required from this
pin to ground to assure stability. The minimum output capacitance required for stability is 2
µF.
NC
5
2, 6, 7
—
Not internally connected.
Thermal pad
4
Input supply. A 0.1-µF to 1-µF, low ESR capacitor must be placed from this pin to ground
near the device.
Ground. The pad must be tied to GND.
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator
into shutdown mode. The EN pin can be connected to the IN pin if not used.
This pin is only available for the fixed voltage versions. Connecting an external capacitor to
this pin bypasses noise that is generated by the internal band gap and allows the output
noise to be reduced to very low levels. The maximum recommended capacitor is 0.01 μF.
—
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
6 Specifications
6.1 Absolute Maximum Ratings
at –40°C ≤ TJ and TA ≤ +125°C (unless otherwise noted). All voltages are with respect to GND. (1)
VIN
VEN
Voltage
VFB
VOUT
MIN
MAX
UNIT
–0.3
7
V
–0.3
VIN + 0.3
V
–0.3
1.6
V
–0.3
VIN + 0.3
V
IOUT
Current
PD(tot)
Continuous total power dissipation
See Thermal Information
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–55
150
°C
(1)
Internally limited
A
Stresses beyond those listed as Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated as Recommended Operating Conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
VALUE
UNIT
±2000
V
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
2.7
VOUT
Output voltage
VFB
6
IOUT
Output current (1)
0
500
mA
TA
Operating free-air temperature
–40
125
°C
CIN
Input capacitor
1
µF
COUT
Output capacitor
2
µF
CNR
Noise reduction capacitor
10
nF
CFF
Feed-forward capacitor
R2
Feedback resistor
(1)
(2)
(2)
3
(2)
6.5
22
110
V
V
1000
pF
kΩ
When operating at TJ near 125°C, IOUT(min) is 500 μA.
Adjustable version only.
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
5
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
6.4 Thermal Information
TPS735
THERMAL METRIC
RθJA
Junction-to-ambient thermal resistance
(1)
(3)
(4)
RθJC(top)
Junction-to-case (top) thermal resistance
RθJB
Junction-to-board thermal resistance
ψJT
Junction-to-top characterization parameter
(5)
ψJB
Junction-to-board characterization parameter
(6)
RθJC(bot)
Junction-to-case (bottom) thermal resistance
(7)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
6
(2)
DRB (SON)
DRV (WSON)
8 PINS
6 PINS
UNIT
52.2
65.1
°C/W
59.4
85.6
°C/W
19.3
34.7
°C/W
2
1.6
°C/W
19.3
35.1
°C/W
11.8
5.8
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Thermal data for the DRB, DCQ, and DRV packages are derived by thermal simulations based on JEDEC-standard methodology as
specified in the JESD51 series. The following assumptions are used in the simulations:
(a) i. DRB: The exposed pad is connected to the PCB ground layer through a 2 x 2 thermal via array.
ii. DRV: The exposed pad is connected to the PCB ground layer through a 2 x 2 thermal via array. Due to size limitation of thermal
pad, 0.8-mm pitch array is used which is off the JEDEC standard.
(b) i. DRB: The top and bottom copper layers are assumed to have a 20% thermal conductivity of copper representing a 20% copper
coverage.
ii DRV: The top and bottom copper layers are assumed to have a 20% thermal conductivity of copper representing a 20% copper
coverage.
(c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3-in × 3-in copper area. To
understand the effects of the copper area on thermal performance, see the Power Dissipation and Estimating Junction Temperature
sections.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
6.5 Electrical Characteristics
over operating temperature range (–40°C ≤ TJ ≤ 125°C), VIN = VOUT(nom) + 0.5 V or 2.7 V (whichever is greater), IOUT = 1 mA,
VEN = VIN, COUT = 2.2 μF, and CNR = 10 nF (unless otherwise noted). For the adjustable version (TPS73501), VOUT = 3 V.
Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
(1)
VIN
Input voltage
VFB
Internal reference (adjustable
version only)
VOUT
Output voltage range
(adjustable version only)
TJ = 25°C
1.196
3%
Dropout voltage (2)
(VIN = VOUT(nom) – 0.1 V)
IOUT = 500 mA
ILIM
Output current limit
VOUT = 0.9 × VOUT(nom), VIN = VOUT(nom) + 0.9 V
VIN ≥ 2.7 V
IGND
Ground pin current
10 mA ≤ IOUT ≤ 500 mA
ISHDN
Shutdown current
VEN ≤ 0 V
IFB
Feedback pin current
(adjustable version only)
VOUT(nom) = 1.2 V
Power-supply rejection ratio
VIN = 3.85 V
VOUT = 2.85 V
CNR = 0.01 µF
IOUT = 100 mA
800
%/V
0.005
%/mA
280
500
mV
1170
1900
mA
45
65
μA
0.15
1
μA
0.5
μA
–0.5
f = 100 Hz
66
f = 1k Hz
68
f = 10 kHz
44
f = 100 kHz
11 × VOUT
CNR = none
95 × VOUT
45
CNR = 1 nF
45
CNR = 10 nF
50
Enable low (shutdown)
IEN(HI)
Enable pin current, enabled
Tsd
Thermal shutdown temperature
UVLO
Undervoltage lockout
VIN rising
Vhys
Hysteresis
VIN falling
dB
22
CNR = 10 nF
CNR = 47 nF
(1)
(2)
0.02
CNR = none
VEN(LO)
V
2%
VDO
Enable high (enabled)
6
±1%
500 µA ≤ IOUT ≤ 500 mA
VEN(HI)
V
±1%
Load regulation
Start-up time
1.220
–3%
ΔVOUT(ΔIOUT)
tSTR
V
–2%
VOUT(nom) + 0.5 V ≤ VIN ≤ 6.5 V
UNIT
6.5
VOUT ≤ 2.2 V
Line regulation (1)
BW = 10 Hz to 100 kHz,
VOUT = 2.8 V
MAX
VOUT > 2.2 V
ΔVOUT(ΔVIN)
Output noise voltage
1.208
VFB
1 mA ≤ IOUT ≤ 500 mA,
VOUT + 0.5 V ≤ VIN < 6.5 V
Vn
TYP
2.7
DC output accuracy (1)
PSRR
MIN
μVRMS
μs
50
1.2
V
VEN = VIN = 6.5 V
0.03
Shutdown, temperature increasing
165
Reset, temperature decreasing
145
1.9
2.2
0.4
V
1
μA
°C
2.65
70
V
mV
Minimum VIN = VOUT + VDO or 2.7 V, whichever is greater.
VDO is not measured for this family of devices with VOUT(nom) < 2.8 V because the minimum VIN = 2.7 V.
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
7
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
6.6 Typical Characteristics
0.5
0.5
0.4
0.4
0.3
0.2
0.1
0
-0.1
TJ = 125°C
TJ = 85°C
TJ = 25°C
(1)
TJ = 0°C
TJ = –40°C
-0.2
-0.3
-0.4
-0.5
3
3.5
4
4.5
5
5.5
6
Change in Output Voltage (%)
Change in Output Voltage (%)
over operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.7 V, whichever is greater; IOUT = 1 mA,
VEN = VIN,COUT = 2.2 μF, CNR = 10 nF. Typical values are at TJ = 25°C, (unless otherwise noted).
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = 0°C
TJ = –40°C
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
3
6.5
3.5
4
2.83
TJ = 85°C
2.54
TJ = –40°C
2.53
Output Voltage (V)
Output Voltage (V)
2.55
TJ = 125°C
2.84
5.5
2.82
2.81
2.8
2.79
2.78
2.77
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = 0°C
TJ = –40°C
2.52
2.51
2.5
2.49
2.48
2.46
2.75
2.45
2.74
0
50
100 150 200 250 300 350 400 450 500
0
50
100 150 200 250 300 350 400 450 500
Load (mA)
Load (mA)
The y-axis range is ±2% of 2.8 V
The y-axis range is ±2% of 2.5 V
Figure 3. TPS735 Load Regulation
Figure 4. TPS735 Load Regulation
500
60
VIN = 6.5 V
VIN = 5 V
VIN = 3.3 V
50
40
30
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = 0°C
TJ = –40°C
20
10
0
0
50
100 150 200 250 300 350 400 450 500
Ground Pin Current (nA)
450
Current on the GND Pin (mA)
6.5
2.47
2.76
400
350
300
250
200
150
100
50
0
-40 -25 -10
5
20
35
50
65
80
95
110 125
Junction Temperature (°C)
Output Current (mA)
Figure 5. TPS735 Ground Pin Current vs
Output Current
8
6
Figure 2. TPS735 Line Regulation
Figure 1. TPS735 Line Regulation
2.85
5
IOUT = 100 mA
IOUT = 100 mA
2.86
4.5
Input Voltage (V)
Input Voltage (V)
Figure 6. TPS735 Ground Pin Current (Disable) vs
Temperature
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
Typical Characteristics (continued)
over operating temperature range (TJ= –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2.7 V, whichever is greater; IOUT = 1 mA,
VEN = VIN,COUT = 2.2 μF, CNR = 10 nF. Typical values are at TJ = 25°C, (unless otherwise noted).
90
400
TJ = +125°C
80
TJ = +85°C
300
70
TJ = +25°C
250
200
TJ = 0°C
150
PSRR (dB)
Dropout Voltage (mV)
350
50
40
IOUT = 1 mA
IOUT = 100 mA
IOUT = 200 mA
IOUT = 250 mA
IOUT = 500 mA
30
TJ = –40°C
100
60
20
50
10
0
0
0
50
10
100 150 200 250 300 350 400 450 500
100
80
80
70
70
60
60
50
40
IOUT = 1 mA
IOUT = 100 mA
IOUT = 200 mA
IOUT = 250 mA
IOUT = 500 mA
50
40
30
IOUT = 1 mA
IOUT = 100 mA
IOUT = 200 mA
IOUT = 250 mA
IOUT = 500 mA
20
10
0
0
10
100
10k
1k
100k
1M
10M
10
100
Frequency (Hz)
10k
1k
100k
1M
10M
Frequency (Hz)
(VIN – VOUT = 0.5 V)
(VIN – VOUT = 0.3 V)
Figure 9. Power-Supply Ripple Rejection vs Frequency
Figure 10. Power-Supply Ripple Rejection vs Frequency
140
30
120
25
Total Noise (mVRMS)
Total Noise (mVRMS)
10M
Figure 8. Power-Supply Ripple Rejection vs Frequency
90
PSRR (dB)
PSRR (dB)
Figure 7. TPS735 Dropout Voltage vs Output Current
10
1M
(VIN – VOUT = 1 V)
90
20
100k
Frequency (Hz)
VEN = 0.4 V
30
10k
1k
Output Current (mA)
100
80
60
40
20
15
10
5
20
0
0
0.01
0.1
10
1
0
5
10
15
20
25
Output Capacitance (mF)
Capacitance on the NR Pin (nF)
CNR = 0.01 µF, IOUT = 1 mA
Figure 11. TPS73525 RMS Noise vs CNR
Figure 12. TPS735 RMS Noise vs COUT
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
9
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
7 Detailed Description
7.1 Overview
The TPS735 of low dropout (LDO) regulator combines the high performance required by radio frequency (RF)
and precision analog applications with ultra-low current consumption. High PSRR is provided by a high-gain,
high-bandwidth error loop with good supply rejection and very low headroom (VIN – VOUT). Fixed voltage versions
provide a noise reduction pin to bypass noise that is generated by the band-gap reference and to improve PSRR.
A quick-start circuit fast-charges this capacitor at start-up. The combination of high performance and low ground
current make the TPS735 device designed for portable applications. All versions have thermal and overcurrent
protection and are specified from –40°C ≤ TJ ≤ +125°C.
7.2 Functional Block Diagrams
IN
OUT
400 W
2 mA
Current
Limit
Overshoot
Detect
Thermal
Shutdown
EN
UVLO
Quickstart
1.208 V
(1)
Bandgap
NR
500 kW
GND
(1)
The 1.2-V fixed voltage version has a 1-V band gap instead of a 1.208-V circuit.
Figure 13. Fixed Voltage Versions
IN
OUT
400 W
3.3 MW
Current
Limit
Thermal
Shutdown
EN
Overshoot
Detect
UVLO
1.208 V
Bandgap
FB
500 kW
GND
Figure 14. Adjustable Voltage Versions
10
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
7.3 Feature Description
7.3.1 Internal Current Limit
The TPS735 internal current limit protects the regulator during fault conditions. During current limit, the output
sources a fixed amount of current that is independent of the output voltage. For reliable operation, do not operate
the device in current limit for extended periods of time.
The PMOS pass element in the TPS735 device contains a built-in body diode that conducts current when the
voltage at the OUT pin exceeds the voltage at the IN pin. This current is not limited, so if extended reverse
voltage operation is expected, external limiting is appropriate.
7.3.2 Shutdown
The enable pin (EN) is active high and is compatible with standard and low-voltage TTL-CMOS levels. When
shutdown capability is not required, the EN pin can connect to the IN pin.
7.3.3 Dropout Voltage
The TPS735 device uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the
dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output
resistance (R(IN/OUT)) of the PMOS pass element. VDO scales with the output current because the PMOS device
operates like a resistor in dropout.
As with any linear regulator, PSRR and transient response degrades as (VIN – VOUT) approaches dropout. Typical
Characteristics shows this effect; (see Figure 8 through Figure 10).
7.3.4 Start-Up and Noise Reduction Capacitor
Fixed voltage versions of the TPS735 use a quick-start circuit to charge the noise reduction (NR) capacitor (CNR)
if present (see Functional Block Diagrams). This architecture allows the combination of low output noise and fast
start-up times. The NR pin is high impedance so a low-leakage CNR capacitor must be used. Most ceramic
capacitors are appropriate in this configuration. A high-quality, COG-type (NPO) dielectric ceramic capacitor is
recommended for CNR when used in environments where abrupt changes in temperature can occur.
For the fastest start-up, first apply VIN , then drive the enable (EN) pin high. If EN is tied to IN, start-up is slower.
See Typical Applications . The quick-start switch closes for approximately 135 μs. To ensure that CNR is charged
during the quick-start time, use a capacitor with a value of no more than 0.01 μF.
7.3.5 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude
but increases the transient response duration. In the adjustable version, adding CFF between the OUT and FB
pins improves stability and transient response performance. The transient response of the TPS735 device is
enhanced by an active pulldown that engages when the output overshoots by approximately 5% or more when
the device is enabled. The pull-down device operates like a 400-Ω resistor to ground when enabled.
7.3.6 Undervoltage Lockout
The TPS735 device uses an undervoltage lockout circuit to disable the output until the internal circuitry is
operates properly. The UVLO circuit contains a deglitch feature so that the UVLO ignores undershoot transients
on the input if the transients are less than 50 μs in duration.
7.3.7 Minimum Load
The TPS735 device is stable with no output load. To meet the specified accuracy, a minimum load of 500 μA is
required. If the output is below 500 µA and if the junction temperature is approximately 125°C, the output can
increase enough to turn on the output pulldown. The output pulldown limits voltage drift to 5% (typically) but
ground current can increase by approximately 50 μA. In most applications, the junction does not reach high
temperatures at light loads because little power is dissipated. As a result, the specified ground current is valid at
no load in most applications.
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
11
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
Feature Description (continued)
7.3.8 Thermal Protection
Thermal protection disables the output when the junction temperature increases to approximately 165°C, which
allows the device to cool. When the junction temperature cools to approximately 145°C, the output circuitry is
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit cycles on and off. This cycling limits the dissipation of the regulator and protects the regulator from
damage as a result of overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heat sink. For reliable operation, limit junction temperature to 125°C (maximum). To estimate the thermal margin
in a complete design (including heat sink), increase the ambient temperature until the thermal protection is
triggered. Use worst-case loads and signal conditions. For reliable operation, trigger thermal protection at least
40°C above the maximum expected ambient condition of a particular application. This configuration produces a
worst-case junction temperature of 125°C at the highest expected ambient temperature and worst-case load.
The internal protection circuitry of the TPS735 protects against overload conditions. This protection circuitry is
not intended to replace proper heat sinking. Continuously running the TPS735 into thermal shutdown degrades
device reliability.
7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
•
The input voltage previously exceeded the UVLO voltage and did not decrease below the UVLO threshold
minus Vhys.
The input voltage is greater than the nominal output voltage that is added to the dropout voltage.
The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased
below the enable falling threshold.
The output current is less than the current limit.
The device junction temperature is within the specified range.
•
•
•
•
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this condition, the output
voltage is equal to the input voltage minus the dropout voltage. The transient performance of the device
degrades because the pass device is in a triode state and the LDO operates like a resistor. Line or load
transients in dropout can result in large output voltage deviations.
7.4.3 Disabled
The device is disabled under the following conditions:
• The input voltage is less than the UVLO threshold minus Vhys, or has not yet exceeded the UVLO threshold.
• The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising
threshold.
• The device junction temperature is greater than the thermal shutdown temperature.
Table 1 lists the conditions that result in different modes of operation.
Table 1. Device Functional Mode Comparison
PARAMETER
OPERATING MODE
VIN
VEN
IOUT
TJ
Normal mode
VIN > VOUTnom + VDO and VIN > UVLO
VEN > VEN(HI)
IOUT < ILIM
TJ < 125°C
Dropout mode
UVLO < VIN < VOUTnom + VDO
VEN > VEN(HI)
—
TJ < 165°C
Disabled mode
(any true condition
disables the device)
VIN < UVLO – Vhys
VEN < VEN(LO)
—
TJ > 165°C
12
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS735 LDO regulator provides a design with an ultra-low noise, high PSRR, low-dropout linear regulation
with a very small ground current (5 µA, typical).
The devices are stable with ceramic capacitors and have a dropout voltage of 280 mV at the full output rating of
500 mA. The features of the TPS735 device enables the LDO regulators to be used in a wide variety of
applications with minimal design complexity.
8.2 Typical Applications
Figure 15 shows the basic circuit connections for fixed-voltage models. Figure 16 shows the connections for the
adjustable output version. R1 and R2 can be calculated for any output voltage using the formula in Figure 16.
Optional input capacitor.
May improve source
impedance, noise, or PSRR.
V
IN
IN
V
OUT
OUT
TPS735
EN
V
EN
GND
2.2 µF
Ceramic
NR
Optional bypass capacitor
to reduce output noise
and increase PSRR.
Figure 15. Typical Application Circuit for Fixed-Voltage Versions
Optional input capacitor.
May improve source
impedance, noise, or PSRR.
V
IN
IN
V
(R + R )
1
2
R
V
OUT
GND
× 1.208
2
TPS735
EN
=
OUT
OUT
R
1
FB
C
FF
2.2 µF
Ceramic
R
2
V
EN
Figure 16. Typical Application Circuit for Adjustable-Voltage Versions
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
13
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
Typical Applications (continued)
8.2.1 Design Requirements
8.2.1.1 Input and Output Capacitor Requirements
Although an input capacitor is not required for stability, connecting a 0.1-μF to 1-μF low-equivalent seriesresistance (ESR) capacitor across the input supply near the regulator is good analog design practice. This
capacitor counteracts reactive input sources and improves transient response and ripple rejection. A higher-value
capacitor may be required if large, fast, rise-time load transients are expected, or if the device is located several
inches from the power source. If source impedance is not sufficiently low, a 0.1-μF input capacitor may be
required to ensure stability.
TheTPS735 device is designed to be stable with standard ceramic output capacitors of values
2 μF or larger. X5R- and X7R-type capacitors are best because these capacitors feature minimal variation in
value and ESR over temperature. Maximum ESR of the output capacitor is < 1 Ω and, therefore, the output
capacitor type must be ceramic or conductive polymer electrolytic.
8.2.1.2 Feed-Forward Capacitor Requirements
The feed-forward capacitor (CFF), shown in Figure 16, is required for stability. For a parallel combination of R1
and R2 equal to 250 kΩ, any value between 3 pF to 1 nF can be used. Fixed-voltage versions have an internal
30-pF feed-forward capacitor that is quick-charged at start-up. Larger value capacitors improve noise slightly.
The TPS735 device is stable in unity-gain configurations (the OUT pin is tied to the FB pin) without CFF.
8.2.2 Detailed Design Procedure
8.2.2.1 Output Noise
In most LDO regulators, the band gap is the dominant noise source. If a noise-reduction capacitor (CNR) is used
with the TPS735 device, the band gap does not contribute significantly to noise. Noise is dominated by the
output resistor divider and the error-amplifier input. To minimize noise in a given application, use a 10-nF noise
reduction capacitor. For the adjustable version, smaller value resistors in the output resistor divider reduce noise.
A parallel combination that produces 2 μA of divider current has the same noise performance as a fixed voltage
version with a CNR. To further optimize noise, set the ESR of the output capacitor to approximately 0.2 Ω. This
configuration maximizes phase margin in the control loop, which reduces the total output noise up to 10%. TI
recommends a maximum capacitor value of 10 nF.
Equation 1 calculates the approximate integrated output noise from 10 Hz to 100 kHz with a CNR value of
10 nF.
Vn (mVRMS ) = 11(mVRMS / V) ´ VOUT (V)
(1)
The TPS735adjustable version does not have the noise-reduction pin available, so ultra-low noise operation is
not possible. Noise is minimized according to the previously listed recommendations.
14
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
Typical Applications (continued)
8.2.3 Application Curves
3.5
3.5
3
3
2.5
2.5
2
2
Voltage (V)
Voltage (V)
at VIN = VOUT(nom) + 0.5 V or 2.7 V, whichever is greater; IOUT = 1 mA, VEN = VIN, COUT = 2.2 μF, CNR = 10 nF, and
TJ = 25°C (unless otherwise noted)
1.5
1
0.5
1.5
1
0.5
VOUT, COUT = 10 mF
VOUT, COUT = 2.2 mF
VEN
0
VOUT, COUT = 10 mF
VOUT, COUT = 2.2 mF
VEN
0
-0.5
-0.5
10 μs/div
10 µs/div
Figure 17. TPS735 Turnon Response (VIN = VEN)
Figure 18. TPS735 Turnon Response Using EN
7
COUT = 470 mF OSCON
VOUT
6
200 mV/div
VIN = VEN
COUT = 10 mF
200 mV/div
Voltage (V)
5
4
COUT = 2.2 mF
200 mV/div
3
2
VOUT
1
500 mA
0
500 mA/div
IOUT
1 mA
-1
10 ms/div
10 ms/div
VIN = 3 V
RL = 5 Ω
Figure 20. TPS735 Load Transient Response
Figure 19. TPS73525 Power-Up and Power-Down
(VIN = VEN)
COUT = 470 mF OSCON
50 mV/div
COUT = 10VmOUT
F
50 mV/div
COUT = 2.2 mF
50 mV/div
4V
VOUT
VIN
0.5 V/div
3V
10 ms/div
Figure 21. TPS735 Line Transient Response
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
15
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
9 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 2.7 V and 6.5 V. The input
voltage range must provide adequate headroom for the device to have a regulated output. This input supply must
be well-regulated. If the input supply is noisy, additional input capacitors with low ESR can help improve output
noise.
10 Layout
10.1 Layout Guidelines
For best overall performance, place all circuit components on the same side of the circuit board and as near to
the respective LDO pin connections as possible. Place ground return connections to the input and output
capacitor, and to the LDO ground pin as close to each other as possible, connected by a wide, component-side,
copper surface. The use of vias and long traces to create LDO component connections is strongly discouraged
and negatively affects system performance. This grounding and layout scheme minimizes inductive parasitics,
and as a result, reduces load-current transients, minimizes noise, and increases circuit stability. TI recommends
using a ground reference plane, and is embedded in the printed circuit board (PCB) itself or located on the
bottom side of the PCB opposite the components. This reference plane ensures accuracy of the output voltage,
shields the LDO from noise, and operates similar to a thermal plane to spread (or sink) heat from the LDO device
when connected to the exposed thermal pad. In most applications, this ground plane is required to meet thermal
requirements.
10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
To improve AC performance (such as PSRR, output noise, and transient response), TI recommends designing
the board with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin
of the device. In addition, the ground connection for the bypass capacitor must connect directly to the GND pin of
the device.
10.2 Layout Example
Input GND
Plane
VOUT
CIN(1)
COUT(1)
OUT
1
NC
2
NR/FB
3
GND
4
CNR(1)
Thermal
Pad
8
IN
7
NC
6
NC
5
EN
VIN
Output GND
Plane
(1)
CIN and COUT are 0603 capacitors and CNR is a 0402 capacitor. The footprint is shown to scale with package size.
Figure 22. TPS735 Fixed Version Layout Reference Diagram
16
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
10.3 Power Dissipation
The ability to remove heat from the die is different for each package type, which presents different considerations
in the PCB layout. The PCB area around the device that is free of other components moves the heat from the
device to the ambient air. Performance data for JEDEC low- and high-K boards are shown in the Thermal
Information section. Heavier copper increases the effectiveness in removing heat from the device. The addition
of plated through-holes to heat-dissipating layers improves the heat sink effectiveness.
Power dissipation depends on input voltage and load conditions. Power dissipation can be approximated by the
product of the output current and the voltage drop across the output pass element, as Equation 2 shows.
PD = (VIN - VOUT ) ´ IOUT
(2)
NOTE
When the device is used in a condition of high input and low output voltages, PD can
exceed the junction temperature rating even when the ambient temperature is at room
temperature.
Equation 3 is an example calculation for the power dissipation (PD) of the DRB package.
PD = (6.5 V - 1.2 V) ´ 500 mA = 2.65 W
(3)
Power dissipation can be minimized and greater efficiency can be achieved by using the lowest possible input
voltage necessary to achieve the required output performance.
On the DRB package, the primary conduction path for heat is through the exposed thermal pad to the PCB. The
pad can be connected to ground or left floating. The pad must be attached to an appropriate amount of copper
PCB area to ensure that the device does not overheat. The maximum allowable junction-to-ambient thermal
resistance depends on the maximum ambient temperature, maximum device junction temperature, and power
dissipation of the device. Equation 4 calculates the maximum junction-to-ambient thermal resistance.
125qC TA
RTJA
PD
(4)
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
17
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
Power Dissipation (continued)
Figure 23 estimates the maximum RθJA and the minimum amount of PCB copper area required to heat sink.
160
DRV
DRB
140
qJA (°C/W)
120
100
80
60
40
20
0
0
Note:
1
2
4
5
7
3
6
Board Copper Area (in2)
8
9
10
θJA value at board size of 9 in2 (that is, 3 in × 3 in) is a JEDEC standard.
Figure 23. θJA vs Board Size
Figure 23 shows the variation of θJA as a function of ground plane copper area in the board. It is intended only as
a guideline to demonstrate the effects of heat spreading in the ground plane and must not be used to estimate
actual thermal performance in real application environments.
NOTE
When the device is mounted on an application PCB, it is strongly recommended to use
ΨJT and ΨJB, as explained in the Estimating Junction Temperature section.
10.4 Estimating Junction Temperature
Using the thermal metrics ΨJT and ΨJB, as the table shows, the junction temperature can be estimated with
corresponding formulas (Equation 5), which are more accurate than the value of TJ through calculation with θJA.
YJT: TJ = TT + YJT · PD
YJB: TJ = TB + YJB · PD
where:
•
•
•
PD is the power dissipation calculated with Equation 2,
TT is the temperature at the center-top of the device package, and
TB is the PCB temperature measured 1 mm away from the device package on the PCB surface (as shown in
Figure 25).
(5)
NOTE
Both TT and TB can be measured on actual application boards using a thermo-gun (an
infrared thermometer).
For more information about measuring TT and TB, see Using New Thermal Metrics, available for download at
www.ti.com.
18
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
TPS735
www.ti.com
SBVS087M – JUNE 2008 – REVISED JUNE 2018
Estimating Junction Temperature (continued)
According to Figure 24, the new thermal metrics (ΨJT and ΨJB) do not depend on the copper area. Using ΨJT or
ΨJB with Equation 5 can estimate TJ by measuring TT or TB on an application board.
35
YJT and YJB (°C/W)
30
25
DRV Y
JB
DRB
20
15
10
DRV Y
JT
DRB
5
0
0
1
2
3
4
5
7
6
8
9
10
Board Copper Area (in2)
Figure 24. ΨJT and ΨJB vs Board Size
TT on top
of device
TB on PCB
surface
TT on top
of device
TB on PCB
surface
1 mm
1 mm
See note (1)
(a) Example DRB (SON) Package Measurement
(1)
(b) Example DRV (WSON) Package Measurement
Power dissipation may limit operating range. See Thermal Information .
Figure 25. Measuring Points for TT and TB
10.5 Package Mounting
Solder pad footprint recommendations for the TPS735 device is available from the TI website at www.ti.com.
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
19
TPS735
SBVS087M – JUNE 2008 – REVISED JUNE 2018
www.ti.com
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Evaluation Modules
Two evaluation modules (EVMs) are available to assist in the initial circuit performance evaluation using the
TPS735. The TPS73501EVM-276 evaluation module and the TPS73525EVM-276 Evaluation Module (and
related user guide) can be requested at the TI website through the product folders or purchased directly from the
TI eStore.
11.1.2 Device Nomenclature
Table 2. Device Nomenclature (1)
PRODUCT
TPS735xx(x)yyyz
(1)
VOUT
xx(x) is the nominal output voltage. For output voltages with a resolution of 100 mV, two
digits are used in the ordering number; otherwise, three digits are used (for example, 33 =
3.3 V; 125 = 1.25 V).
yyy is the package designator.
z is the tape and reel quantity (R = 3000, T = 250).
01 is the adjustable version.
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, TPS735EVM-276 User Guide
11.3 Trademarks
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
Submit Documentation Feedback
Copyright © 2008–2018, Texas Instruments Incorporated
Product Folder Links: TPS735
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS73501DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CBK
Samples
TPS73501DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CBK
Samples
TPS73501DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SDR
Samples
TPS73501DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
SDR
Samples
TPS73512DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QTT
Samples
TPS73512DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QTT
Samples
TPS73515DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QWH
Samples
TPS73515DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QWH
Samples
TPS73525DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CBM
Samples
TPS73525DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CBM
Samples
TPS73525DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
NSW
Samples
TPS73525DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
NSW
Samples
TPS73527DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
RAK
Samples
TPS73527DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
RAK
Samples
TPS735285DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
RAW
Samples
TPS735285DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
RAW
Samples
TPS73533DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CVY
Samples
TPS73533DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
CVY
Samples
TPS73533DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
CVY
Samples
TPS73533DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
CVY
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
14-Oct-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS73534DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QTU
Samples
TPS73534DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
QTU
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
