TRF1208
SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
TRF1208 10-MHz to 11-GHz, 3-dB-BW ADC Driver Amplifier
1 Features
•
•
•
•
•
•
•
•
•
•
•
Excellent performance driving RF ADCs
– Single-ended to differential
– Differential to differential
Two fixed-gain variants:
– 16 dB (TRF1208)
– 10 dB (TRF1208B)
Bandwidth:
– TRF1208: 8 GHz (1-dB), 11 GHz (3-dB)
– TRF1208B: 8.8 GHz (1-dB), 10.5 GHz (3-dB)
OIP3:
– TRF1208: 37 dBm (2 GHz), 32 dBm (6 GHz)
– TRF1208B: 36 dBm (2 GHz), 28 dBm (6 GHz)
P1dB:
– TRF1208: 15 dBm (2 GHz), 12.5 dBm (6 GHz)
– TRF1208B: 14 dBm (2 GHz), 11 dBm (6 GHz)
Noise figure:
– TRF1208: 7 dB (2 GHz), 7 dB (8 GHz)
– TRF1208B: 9.4 dB (2 GHz), 10.2 dB (8 GHz)
Output noise spectral density (NSD), dBm/Hz:
– TRF1208: –151 (2 GHz), –151 (8 GHz)
– TRF1208B: –154.6 (2 GHz), –153.8 (8 GHz)
Gain and phase imbalance: ±0.3 dB and ±3º
Power-down feature
3.3‑V single-supply operation
Active current: 138 mA
2 Applications
•
•
•
•
•
RF sampling or GSPS ADC driver
Aerospace and defense
Radar seeker front end
Phased array radar
Military radios
•
•
•
•
•
Test and measurement
High-speed digitizers
Vector signal transceiver (VST)
4G/5G wireless BTS
RF active balun
3 Description
The TRF1208 is a very high performance,
RF amplifier optimized for radio frequency (RF)
applications. This device is excellent for accoupled applications that require a single-ended
to differential conversion when driving an analog-todigital converter (ADC) such as the high performance
ADC12DJ5200RF. The on-chip matching components
simplify printed circuit board (PCB) implementation
and provide the highest performance over the
usable bandwidth. The device is fabricated in Texas
Instruments’ advanced complementary BiCMOS
process and is available in a space-saving, WQFNFCRLF package.
The TRF1208 operates on a single-rail supply and
consumes about 138 mA of active current. A powerdown feature is also available for power savings.
Device Information(1)
PART
NUMBER
TRF1208
16 dB
TRF1208B
10 dB
(1)
(2)
PD
GAIN
PACKAGE
RPV
(WQFN‑FCRLF, 12)
PACKAGE
SIZE(2)
2 mm × 2 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
The package size (length × width) is a nominal value and
includes pins, where applicable.
VDD
TRF1208
+
ADC12DJ5200
–
RS
50
50
TRF1208 Driving a High-Speed ADC
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TRF1208
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics: TRF1208............................5
6.6 Electrical Characteristics: TRF1208B......................... 7
6.7 Typical Characteristics: TRF1208............................... 9
6.8 Typical Characteristics: TRF1208B...........................16
7 Detailed Description......................................................23
7.1 Overview................................................................... 23
7.2 Functional Block Diagram......................................... 23
7.3 Feature Description...................................................24
7.4 Device Functional Modes..........................................24
8 Application and Implementation.................................. 25
8.1 Application Information............................................. 25
8.2 Typical Applications.................................................. 28
8.3 Power Supply Recommendations.............................32
8.4 Layout....................................................................... 32
9 Device and Documentation Support............................33
9.1 Device Support......................................................... 33
9.2 Documentation Support ........................................... 33
9.3 Receiving Notification of Documentation Updates....33
9.4 Support Resources................................................... 33
9.5 Trademarks............................................................... 33
9.6 Electrostatic Discharge Caution................................33
9.7 Glossary....................................................................33
10 Mechanical, Packaging, and Orderable
Information.................................................................... 33
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2022) to Revision C (August 2023)
Page
• Added TRF1208B device variant and associated content..................................................................................1
Changes from Revision A (March 2022) to Revision B (April 2022)
Page
• Changed Pin 12 from: OUTP to: OUTM and Pin 11 from: OUTM to OUTP .......................................................3
• Updated the Interfacing with AFE7950 RX and Interfacing with AFE7950 TX figures..................................... 25
• Updated the TRF1208 in Receive Chain with AFE7950 figure.........................................................................28
• Updated the TRF1208 in Transmit Chain with AFE7950 figure........................................................................30
Changes from Revision * (October 2021) to Revision A (March 2022)
Page
• Changed the status of the document from: Advanced Information to: Production Data ....................................1
2
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1
PD
2
12
GND
OUTP
10
GND
9
VDD
8
TP1
7
GND
11
OUTM
5 Pin Configuration and Functions
GND
4
INM
INP
3
5
TP2
6
Thermal pad
Not to scale
Figure 5-1. RPV Package,
12-Pin WQFN-FCRLF
(Top View)
Table 5-1. Pin Functions
PIN
NAME
NO.
TYPE(1)
DESCRIPTION
GND
1, 4, 7, 10
GND
INM
5
I
Ground
Differential signal input, negative
INP
6
I
Differential signal input, positive
OUTM
12
O
Differential signal output, negative
OUTP
11
O
Differential signal output, positive
PD
2
I
Power-down signal. Supports 1.8-V and 3.3-V Logic.
0 = Chip enabled
1 = Power down
TP1
8
—
Test pin. Short to ground.
TP2
3
—
Test pin. Short to ground.
VDD
9
P
3.3-V supply
Pad
—
Thermal pad. Connect to ground on board.
Thermal pad
(1)
I = input, O = output, P = power, GND = ground
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
–0.3
3.7
V
20
dBm
VDD
Supply voltage
INP, INM
Input pin power
VPD
Power-down pin voltage
–0.3
3.7
V
TJ
Junction temperature
–40
150
ºC
Tstg
Storage temperature
–40
150
ºC
Continuous power dissipation
(1)
See thermal information
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±1000
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002, all pins(2)
±250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Supply voltage
3.2
3.3
3.45
V
TA
Ambient air temperature
–40
25
105
°C
TJ
Junction temperature
–40
125
°C
6.4 Thermal Information
TRF1208x
THERMAL
METRIC(1)
RPV (WQFN)
UNIT
12 PINS
RθJA
Junction-to-ambient thermal resistance
66.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
64.3
°C/W
RθJB
Junction-to-board thermal resistance
17.4
°C/W
ΨJT
Junction-to-top characterization parameter
1.7
°C/W
ΨJB
Junction-to-board characterization parameter
17.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
9.0
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics: TRF1208
at TA = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
SSBW
Small-signal 3-dB bandwidth
VO = 0.1 VPP
11
GHz
LSBW
Large-signal 3-dB bandwidth
VO = 1 VPP
11
GHz
8
GHz
16
dB
1-dB BW Bandwidth for 1-dB flatness
S21
Power gain
f = 2 GHz
S11
Input return loss
f = 10 MHz to 8 GHz
–10
dB
S12
Reverse isolation
f = 2 GHz
–35
dB
ImbGAIN
Gain imbalance
f = 10 MHz to 8 GHz
± 0.3
dB
f = 10 MHz to 8 GHz
±3
°
f = 2 GHz
–45
dB
f = 0.5 GHz, PO = +3 dBm
–70
f = 2 GHz, PO = +3 dBm
–65
f = 6 GHz, PO = +3 dBm
–52
f = 8 GHz, PO = +3 dBm
–45
f = 0.5 GHz, PO = +3 dBm
–68
f = 2 GHz, PO = +3 dBm
–63
f = 6 GHz, PO = +3 dBm
–56
f = 8 GHz, PO = +3 dBm
–63
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–73
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–69
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–56
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–45
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–75
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–84
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–72
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–51
ImbPHASE Phase imbalance
CMRR
HD2
HD3
IMD2
IMD3
Common-mode rejection
ratio(1)
Second-order harmonic distortion
Third-order harmonic distortion
Second-order intermodulation distortion
Third-order intermodulation distortion
f = 0.5 GHz
OP1dB
OIP2
Output 1-dB compression point
Output second-order intercept point
dBc
dBc
dBc
dBc
11
f = 2 GHz
15
f = 6 GHz
12.5
f = 8 GHz
7.5
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
68
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
63
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
55
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
42
dBm
dBm
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6.5 Electrical Characteristics: TRF1208 (continued)
at TA = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
PARAMETER
OIP3
Output third-order intercept point
NF
Noise figure
TEST CONDITIONS
MIN
TYP
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
34
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
37
f = 4 GHz, PO = –4 dBm per tone
(10-MHz spacing)
34
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
30
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
21
f = 0.5 GHz
6.5
f = 2 GHz
6.8
f = 6 GHz
7.2
f = 8 GHz
7
MAX
UNIT
dBm
dB
IMPEDANCE
ZO-DIFF
Differential output impedance
f = dc (internal to the device)
3
Ω
ZIN
Single-ended input impedance
INM pin terminated with 50 Ω
50
Ω
2
VPP
TRANSIENT
VOMAX
Maximum output voltage (differential)
VOSAT
Saturated output voltage level
(differential)
f = 2 GHz
3.9
VPP
tREC
Overdrive recovery time
Using a –0.5-VP input pulse of 2-ns
duration
0.2
ns
POWER SUPPLY
IQA
Active current
Current on VDD pin, PD = 0
138
mA
IQPD
Power-down quiescent current
Current on VDD pin, PD = 1
7
mA
ENABLE
VPDHIGH
PD pin logic high
VPDLOW
PD pin logic low
IPDBIAS
PD bias current (current on PD pin)
CPD
PD pin capacitance
tON
tOFF
(1)
6
1.45
V
0.8
V
PD = high (1.8-V logic)
50
100
PD = high (3.3-V logic)
200
250
2
pF
Turn-on time
50% VPD to 90% RF
200
ns
Turn-off time
50% VPD to 10% RF
50
ns
µA
Calculated using the formula (S21-S31)/(S21+S31). Port-1: INP, Port-2: OUTP, Port-3: OUTM.
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6.6 Electrical Characteristics: TRF1208B
at TA = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
SSBW
Small-signal 3-dB bandwidth
VO = 0.1 VPP
10.5
GHz
LSBW
Large-signal 3-dB bandwidth
VO = 1 VPP
10.5
GHz
1-dB BW Bandwidth for 1-dB flatness
8.8
GHz
S21
Power gain
f = 2 GHz
10.5
dB
S11
Input return loss
f = 10 MHz to 8 GHz
–10
dB
S12
Reverse isolation
f = 2 GHz
–32
dB
Gain imbalance
f = 10 MHz to 8 GHz
±0.3
dB
Phase imbalance
f = 10 MHz to 8 GHz
±3
°
f = 2 GHz
–45
dB
f = 0.5 GHz, PO = +3 dBm
–59
f = 2 GHz, PO = +3 dBm
–56
f = 6 GHz, PO = +3 dBm
–57
f = 8 GHz, PO = +3 dBm
–58
f = 0.5 GHz, PO = +3 dBm
–63
f = 2 GHz, PO = +3 dBm
–70
f = 6 GHz, PO = +3 dBm
–62
f = 8 GHz, PO = +3 dBm
–53
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–60
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–56
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–50
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–46
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–74
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–80
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–63
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
–50
f = 0.5 GHz
9.5
f = 2 GHz
14
f = 6 GHz
11
f = 8 GHz
8
CMRR
HD2
HD3
IMD2
IMD3
OP1dB
OIP2
Common-mode rejection
ratio(1)
Second-order harmonic distortion
Third-order harmonic distortion
Second-order intermodulation distortion
Third-order intermodulation distortion
Output 1-dB compression point
Output second-order intercept point
dBc
dBc
dBc
dBc
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
55
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
51
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
45
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
42
dBm
dBm
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6.6 Electrical Characteristics: TRF1208B (continued)
at TA = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
PARAMETER
OIP3
Output third-order intercept point
NF
Noise figure
TEST CONDITIONS
MIN
TYP
f = 0.5 GHz, PO = –4 dBm per tone
(10-MHz spacing)
33
f = 2 GHz, PO = –4 dBm per tone
(10-MHz spacing)
36
f = 6 GHz, PO = –4 dBm per tone
(10-MHz spacing)
28
f = 8 GHz, PO = –4 dBm per tone
(10-MHz spacing)
21
f = 0.5 GHz
9.0
f = 2 GHz
9.4
f = 6 GHz
9.9
f = 8 GHz
10.2
MAX
UNIT
dBm
dB
IMPEDANCE
ZO-DIFF
Differential output impedance
f = DC (internal to the device)
3
Ω
ZIN
Single ended input impedance
INM pin terminated with 50 Ω
50
Ω
2
VPP
TRANSIENT
VOMAX
Maximum output voltage (differential)
VOSAT
Saturated output voltage level
(differential)
f = 2 GHz
2.8
VPP
tREC
Overdrive recovery time
Using a –0.5-VP input pulse of 2-ns
duration
0.2
ns
POWER SUPPLY
IQA
Active current
Current on VDD pin, PD = 0
138
mA
IQPD
Power-down quiescent current
Current on VDD pin, PD = 1
7
mA
ENABLE
VPDHIGH
PD pin logic high
VPDLOW
PD pin logic low
V
0.8
PD = high (1.8-V logic)
50
100
PD = high (3.3-V logic)
200
250
V
IPDBIAS
PD bias current (current on PD pin)
CPD
PD pin capacitance
2
pF
tON
Turn-on time
50% VPD to 90% RF
200
ns
tOFF
Turn-off time
50% VPD to 10% RF
50
ns
(1)
8
1.45
µA
Calculated using the formula (S21-S31)/(S21+S31). Port-1: INP, Port-2: OUTP, Port-3: OUTM.
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6.7 Typical Characteristics: TRF1208
20
20
18
18
16
16
14
14
12
12
S21 (dB)
S21 (dB)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
10
8
6
2
4
2000
3.15 V
3.3 V
3.45 V
2
0
0
8
6
-40 qC
25 qC
85 qC
105 qC
4
10
4000
6000
8000
Frequency (MHz)
10000
0
12000
0
2000
SBOS
.
0
-5
-10
-10
-15
-15
-20
-20
S11 (dB)
S11 (dB)
0
-25
-30
-35
4000
6000
8000
Frequency (MHz)
10000
-30
-40
3.15 V
3.3 V
3.45 V
-45
-50
2000
-25
-35
-40 qC
25 qC
85 qC
105 qC
0
-50
12000
0
2000
SBOS
.
4000
6000
8000
Frequency (MHz)
10000
12000
.
Figure 6-3. Return Loss Across Temperature
Figure 6-4. Return Loss Across VDD
0
0
-5
-5
-10
-10
-15
-15
-20
-20
S12 (dB)
S12 (dB)
12000
Figure 6-2. Power Gain Across VDD
-5
-45
10000
.
Figure 6-1. Power Gain Across Temperature
-40
4000
6000
8000
Frequency (MHz)
-25
-30
-35
-40 qC
25 qC
85 qC
105 qC
-40
-45
-50
0
2000
4000
6000
8000
Frequency (MHz)
10000
12000
-25
-30
-35
-40
3.15 V
3.3 V
3.45 V
-45
-50
0
2000
SBOS
.
4000
6000
8000
Frequency (MHz)
10000
12000
.
Figure 6-5. Reverse Isolation Across Temperature
Figure 6-6. Reverse Isolation Across VDD
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6.7 Typical Characteristics: TRF1208 (continued)
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
-40 qC
25 qC
85 qC
105 qC
OIP3 (dBm)
OIP3 (dBm)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
0
2000
4000
6000
Frequency (MHz)
8000
10000
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
3.15 V
3.3 V
3. 45 V
0
2000
SBOS
Pout /tone = -4 dBm, 10 MHz tone spacing
-20
-40 qC
25 qC
85 qC
105 qC
-40
3.15 V
3.3 V
3.45 V
-30
IMD3 Lower freq (dBc)
-30
IMD3 Lower freq (dBc)
10000
Figure 6-8. OIP3 Across VDD
-20
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
-100
10000
0
2000
SBOS
At (2f1-f2) frequency, f1 < f2; Pout /tone = -4 dBm, 10 MHz tone
spacing
4000
6000
Frequency (MHz)
8000
10000
At (2f1-f2) frequency, f1 < f2; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-9. IMD3 Lower Across Temperature
Figure 6-10. IMD3 Lower Across VDD
-20
-20
-40 qC
25 qC
85 qC
105 qC
-40
3.15 V
3.3 V
3.45 V
-30
IMD3 Higher freq (dBc)
-30
IMD3 Higher freq (dBc)
8000
Pout /tone = -4 dBm, 10 MHz tone spacing
Figure 6-7. OIP3 Across Temperature
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
-100
0
2000
SBOS
At (2f2-f1) frequency, f1 < f2; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-11. IMD3 Higher Across Temperature
10
4000
6000
Frequency (MHz)
4000
6000
Frequency (MHz)
8000
10000
At (2f2-f1) frequency, f1 < f2; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-12. IMD3 Higher Across VDD
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
6.7 Typical Characteristics: TRF1208 (continued)
80
80
70
70
OIP2 Lower freq (dBm)
OIP2 Lower freq (dBm)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
60
50
40
-40 qC
25 qC
85 qC
105 qC
30
2000
50
40
3.15 V
3.3 V
3.45 V
30
20
0
60
4000
6000
Frequency (MHz)
8000
20
10000
0
At (f2-f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
70
70
OIP2 Higher freq (dBm)
OIP2 Higher freq (dBm)
80
60
50
40
-40 qC
25 qC
85 qC
105 qC
4000
6000
Frequency (MHz)
8000
50
40
3.15 V
3.3 V
3.45 V
20
10000
0
2000
SBOS
At (f2+f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
4000
6000
Frequency (MHz)
8000
10000
At (f2+f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-15. OIP2 Higher Across Temperature
Figure 6-16. OIP2 Higher Across VDD
-20
-20
-40 qC
25 qC
85 qC
105 qC
-40
3.15 V
3.3 V
3.45 V
-30
IMD2 Lower freq (dBc)
-30
IMD2 Lower freq (dBc)
10000
60
30
20
2000
8000
Figure 6-14. OIP2 Lower Across VDD
80
0
4000
6000
Frequency (MHz)
At (f2-f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-13. OIP2 Lower Across Temperature
30
2000
SBOS
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
-100
0
2000
SBOS
At (f2-f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-17. IMD2 Lower Across Temperature
4000
6000
Frequency (MHz)
8000
10000
At (f2-f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-18. IMD2 Lower Across VDD
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6.7 Typical Characteristics: TRF1208 (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
-20
-20
-40 qC
25 qC
85 qC
105 qC
-40
3.15 V
3.3 V
3.45 V
-30
IMD2 Higher freq (dBc)
IMD2 Higher freq (dBc)
-30
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
-100
10000
0
At (f2+f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
10000
-20
-40 qC
25 °C
85 °C
105 °C
-30
-40
3.15 V
3.3 V
3.45 V
-30
-40
HD2 (dBc)
-50
-60
-70
-80
-50
-60
-70
-80
-90
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
-100
10000
0
2000
SBOS
Pout = +3 dBm
4000
6000
Frequency (MHz)
8000
10000
8000
10000
Pout = +3 dBm
Figure 6-21. HD2 Across Temperature
Figure 6-22. HD2 Across VDD
-20
-20
-40 qC
25 qC
85 qC
105 qC
-30
-40
3.15 V
3.3 V
3.45 V
-30
-40
-50
HD3 (dBc)
HD3 (dBc)
8000
Figure 6-20. IMD2 Higher Across VDD
-20
-60
-70
-80
-50
-60
-70
-80
-90
-90
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
-100
0
SBOS
Pout = +3 dBm
2000
4000
6000
Frequency (MHz)
Pout = +3 dBm
Figure 6-23. HD3 Across Temperature
12
4000
6000
Frequency (MHz)
At (f2+f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
Figure 6-19. IMD2 Higher Across Temperature
HD2 (dBc)
2000
SBOS
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Figure 6-24. HD3 Across VDD
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6.7 Typical Characteristics: TRF1208 (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
-20
-30
-40
-50
-60
-70
-50
-60
-70
-80
-80
-90
-90
-100
-4
-2
1800 MHz
4000 MHz
6000 MHz
8000 MHz
-30
HD3 (dBc)
HD2 (dBc)
-40
-20
1800 MHz
4000 MHz
6000 MHz
8000 MHz
0
2
4
Output Power (dBm)
6
-100
-4
8
-2
.
8
Figure 6-26. HD3 vs Output Power
20
20
-40 qC
25 qC
85 qC
105 qC
18
16
14
12
10
8
3.15 V
3.3 V
3.45 V
18
Output P1dB (dBm)
Output P1dB (dBm)
6
.
Figure 6-25. HD2 vs Output Power
16
14
12
10
8
6
6
4
0
2000
4000
6000
Frequency (MHz)
8000
4
10000
0
2000
SBOS
.
4000
6000
Frequency (MHz)
8000
10000
.
Figure 6-27. Output P1dB Across Temperature
Figure 6-28. Output P1dB Across VDD
14
14
-40 qC
25 qC
85 qC
105 qC
12
10
3.15 V
3.3 V
3.45 V
12
10
8
NF (dB)
NF (dB)
0
2
4
Output Power (dBm)
6
4
8
6
4
2
2
0
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
0
SBOS
.
2000
4000
6000
Frequency (MHz)
8000
10000
.
Figure 6-29. NF Across Temperature
Figure 6-30. NF Across VDD
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
6.7 Typical Characteristics: TRF1208 (continued)
1
5
0.8
4
0.6
3
Phase Imbalance (deg)
Gain Imbalance (dB)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
0.4
0.2
0
-0.2
-0.4
-40 qC
25 qC
85 qC
105 qC
-0.6
-0.8
2
1
0
-1
-2
-40 qC
25 qC
85 qC
105 qC
-3
-4
-1
-5
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
2000
SBOS
.
Figure 6-31. Gain Imbalance
SBOS
Figure 6-32. Phase Imbalance
-40 qC
25 qC
85 qC
105 qC
-20
3.15 V
3.3 V
3.45 V
-10
-20
CMRR (dB)
CMRR (dB)
10000
0
-10
-30
-40
-50
-30
-40
-50
-60
-60
-70
0
2000
4000
6000
Frequency (MHz)
8000
-70
10000
0
2000
SBOS
.
1.5
3.5
1
3
Saturation level (V pp)
4
0.5
0
-0.5
-1
-2
0.5
8000
10000
Figure 6-34. CMRR Across VDD
2
-1.5
4000
6000
Frequency (MHz)
.
Figure 6-33. CMRR Across Temperature
Amplitude (V)
8000
.
0
2.5
2
1.5
1
0.5
V_measured
V_ideal
0
1
1.5
2
2.5
3
Time (ns)
3.5
4
4.5
5
0
Input = -2 dBm, f = 500 MHz
2000
4000
6000
Frequency (MHz)
8000
10000
Input = +6 dBm
Figure 6-35. Overdrive Recovery
14
4000
6000
Frequency (MHz)
Figure 6-36. Saturation Voltage
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6.7 Typical Characteristics: TRF1208 (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
.
.
Figure 6-38. Differential S22
Figure 6-37. Single-Ended S11
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
6.8 Typical Characteristics: TRF1208B
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
20
20
-40 C
25 C
85 C
105 C
18
16
14
14
12
12
S21 (dB)
S21 (dB)
16
10
8
3.15 V
3.3 V
3.45 V
18
10
8
6
6
4
4
2
2
0
0
0
2000
4000
6000
8000
Frequency (MHz)
10000
12000
0
2000
.
0
-5
-5
-10
-10
S11 (dB)
S11 (dB)
12000
Figure 6-40. Power Gain Across VDD
0
-15
-20
-25
-15
-20
-25
-40 C
25 C
85 C
105 C
-30
3.15 V
3.3 V
3.45 V
-30
-35
-35
0
2000
4000
6000
8000
Frequency (MHz)
10000
12000
0
2000
.
4000
6000
8000
Frequency (MHz)
10000
12000
.
Figure 6-41. Return Loss Across Temperature
Figure 6-42. Return Loss Across VDD
0
0
-5
-5
-10
-10
-15
-15
-20
-20
S12 (dB)
S12 (dB)
10000
.
Figure 6-39. Power Gain Across Temperature
-25
-30
-35
-25
-30
-35
-40 C
25 C
85 C
105 C
-40
-45
-50
-40
3.15 V
3.3 V
3.45 V
-45
-50
0
2000
4000
6000
8000
Frequency (MHz)
10000
12000
0
2000
.
4000
6000
8000
Frequency (MHz)
10000
12000
.
Figure 6-43. Reverse Isolation Across Temperature
16
4000
6000
8000
Frequency (MHz)
Figure 6-44. Reverse Isolation Across VDD
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6.8 Typical Characteristics: TRF1208B (continued)
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
-40 C
25 C
85 C
105 C
OIP3 (dBm)
OIP3 (dBm)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
0
2000
4000
6000
Frequency (MHz)
8000
10000
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
3.15 V
3.3 V
3.45 V
0
2000
Pout /tone = –4 dBm, 10 MHz tone spacing
10000
Figure 6-46. OIP3 Across VDD
-20
-20
-40 C
25 C
85 C
105 C
-40
3.15 V
3.3 V
3.45 V
-30
IMD3 Lower freq (dBc)
-30
IMD3 Lower freq (dBc)
8000
Pout /tone = –4 dBm, 10 MHz tone spacing
Figure 6-45. OIP3 Across Temperature
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
At (2f1-f2) frequency, f1 < f2; Pout /tone = –4 dBm, 10 MHz tone
spacing
2000
4000
6000
Frequency (MHz)
8000
10000
At (2f1-f2) frequency, f1 < f2; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-47. IMD3 Lower Across Temperature
Figure 6-48. IMD3 Lower Across VDD
-20
-20
-40 C
25 C
85 C
105 C
-40
3.15 V
3.3 V
3.45 V
-30
IMD3 Higher freq (dBc)
-30
IMD3 Higher freq (dBc)
4000
6000
Frequency (MHz)
-50
-60
-70
-80
-90
-40
-50
-60
-70
-80
-90
-100
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
At (2f2-f1) frequency, f1 < f2; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-49. IMD3 Higher Across Temperature
0
2000
4000
6000
Frequency (MHz)
8000
10000
At (2f2-f1) frequency, f1 < f2; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-50. IMD3 Higher Across VDD
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
6.8 Typical Characteristics: TRF1208B (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
80
80
OIP2 Lower freq (dBm)
70
60
50
40
70
OIP2 Lower freq (dBm)
-40 C
25 C
85 C
105 C
30
60
50
40
3.15 V
3.3 V
3.45 V
30
20
20
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
At (f2-f1) frequency, f2 > f1; Pout /tone = -4 dBm, 10 MHz tone
spacing
80
70
70
OIP2 Higher freq (dBm)
OIP2 Higher freq (dBm)
80
60
50
40
-40 C
25 C
85 C
105 C
10000
60
50
40
3.15 V
3.3 V
3.45 V
30
20
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
At (f2+f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
2000
4000
6000
Frequency (MHz)
8000
10000
At (f2+f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-53. OIP2 Higher Across Temperature
Figure 6-54. OIP2 Higher Across VDD
-20
-20
-40 C
25 C
85 C
105 C
3.15 V
3.3 V
3.45 V
-30
IMD2 Lower freq (dBc)
-30
IMD2 Lower freq (dBc)
8000
Figure 6-52. OIP2 Lower Across VDD
20
-40
-50
-60
-70
-40
-50
-60
-70
-80
-80
0
2000
4000
6000
Frequency (MHz)
8000
10000
At (f2-f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-55. IMD2 Lower Across Temperature
18
4000
6000
Frequency (MHz)
At (f2-f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-51. OIP2 Lower Across Temperature
30
2000
0
2000
4000
6000
Frequency (MHz)
8000
10000
At (f2-f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-56. IMD2 Lower Across VDD
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6.8 Typical Characteristics: TRF1208B (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
-20
-20
-40 C
25 C
85 C
105 C
3.15 V
3.3 V
3.45 V
-30
IMD2 Higher freq (dBc)
IMD2 Higher freq (dBc)
-30
-40
-50
-60
-70
-40
-50
-60
-70
-80
-80
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
At (f2+f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
8000
10000
Figure 6-58. IMD2 Higher Across VDD
-20
-20
-40 C
25 C
85 C
105 C
-30
3.15 V
3.3 V
3.45 V
-30
-40
HD2 (dBc)
-40
-50
-50
-60
-60
-70
-70
-80
-80
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
2000
Pout = +3 dBm
4000
6000
Frequency (MHz)
8000
10000
8000
10000
Pout = +3 dBm
Figure 6-59. HD2 Across Temperature
Figure 6-60. HD2 Across VDD
-20
-20
-40 C
25 C
85 C
105 C
-30
-40
3.15 V
3.3 V
3.45 V
-30
-40
-50
HD3 (dBc)
HD3 (dBc)
4000
6000
Frequency (MHz)
At (f2+f1) frequency, f2 > f1; Pout /tone = –4 dBm, 10 MHz tone
spacing
Figure 6-57. IMD2 Higher Across Temperature
HD2 (dBc)
2000
-60
-70
-50
-60
-70
-80
-80
-90
-90
-100
-100
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
Pout = +3 dBm
2000
4000
6000
Frequency (MHz)
Pout = +3 dBm
Figure 6-61. HD3 Across Temperature
Figure 6-62. HD3 Across VDD
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6.8 Typical Characteristics: TRF1208B (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
-20
-20
-30
1800 MHz
4000 MHz
6000 MHz
8000 MHz
-40
HD3 (dBc)
-40
HD2 (dBc)
1800 MHz
4000 MHz
6000 MHz
8000 MHz
-30
-50
-60
-50
-60
-70
-80
-70
-80
-4
-90
-2
0
2
4
Output Power (dBm)
6
-100
-4
8
-2
.
20
-40 C
25 C
85 C
105 C
18
16
14
12
10
8
6
3.15 V
3.3 V
3.45 V
18
16
Output P1dB (dB)
Output P1dB (dB)
8
Figure 6-64. HD3 vs Output Power
20
14
12
10
8
6
4
4
2
2
0
0
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
2000
.
4000
6000
Frequency (MHz)
8000
10000
.
Figure 6-65. Output P1dB Across Temperature
Figure 6-66. Output P1dB Across VDD
16
16
14
14
12
12
10
10
NF (dB)
NF (dB)
6
.
Figure 6-63. HD2 vs Output Power
8
6
8
6
4
4
-40 C
25 C
85 C
105 C
2
3.15 V
3.3 V
3.45 V
2
0
0
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
.
2000
4000
6000
Frequency (MHz)
8000
10000
.
Figure 6-67. NF Across Temperature
20
0
2
4
Output Power (dBm)
Figure 6-68. NF Across VDD
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SBOS972C – OCTOBER 2021 – REVISED AUGUST 2023
6.8 Typical Characteristics: TRF1208B (continued)
1
5
0.8
4
0.6
3
Phase Imbalance (deg)
Gain Imbalance (dB)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
0.4
0.2
0
-0.2
-0.4
-40 C
25 C
85 C
105 C
-0.6
-0.8
2
1
0
-1
-2
-40 C
25 C
85 C
105 C
-3
-4
-5
-1
0
2000
4000
6000
Frequency (MHz)
8000
0
10000
2000
.
10000
Figure 6-70. Phase Imbalance
0
0
-40 C
25 C
85 C
105 C
-10
3.15 V
3.3 V
3.45 V
-10
-20
CMRR (dB)
-20
CMRR (dB)
8000
.
Figure 6-69. Gain Imbalance
-30
-40
-30
-40
-50
-50
-60
-60
-70
-70
0
2000
4000
6000
Frequency (MHz)
8000
10000
0
2000
.
4000
6000
Frequency (MHz)
8000
10000
.
Figure 6-71. CMRR Across Temperature
Figure 6-72. CMRR Across VDD
4
3
V_measured
V_ideal
2.5
3.5
2
Saturation level (V PP)
1.5
Amplitude (V)
4000
6000
Frequency (MHz)
1
0.5
0
-0.5
-1
-1.5
-2
3
2.5
2
1.5
1
0.5
-2.5
0
-3
0
0.5
1
1.5
2
2.5
Time (ns)
3
3.5
4
0
Input = +8 dBm, f = 500 MHz
2000
4000
6000
Frequency (MHz)
8000
10000
Input = +8 dBm
Figure 6-73. Overdrive Recovery
Figure 6-74. Saturation Voltage
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6.8 Typical Characteristics: TRF1208B (continued)
at temperature = 25°C, VDD = 3.3 V, 50-Ω single-ended input, and 100-Ω differential output (unless otherwise noted)
.
.
Figure 6-75. Single-Ended S11
22
Figure 6-76. Differential S22
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7 Detailed Description
7.1 Overview
The TRF1208 is a very high-performance amplifier optimized for radio frequency (RF) and intermediate
frequency (IF) with signal bandwidths up to 11 GHz. The low frequency response is limited only by the
ac‑coupling capacitor on the PCB. The device is designed for ac-coupled applications that require a singleended to differential conversion when driving an analog-to-digital converter (ADC). The device has a two-stage
architecture and provides approximately 16 dB of gain for the TRF1208 and approximately 10 dB of gain for
TRF1208B when configured for single-ended inputs driven from a 50-Ω source. This device also works as a
differential-to-single-ended amplifier to act as a DAC buffer.
This device does not require any pullup or pulldown components on the PCB, and thereby simplifies the layout
and provides the highest performance over the entire bandwidth.
The input and output are ac coupled. The TRF1208 is powered with 3.3‑V supply. A power-down feature is also
available.
7.2 Functional Block Diagram
The following figure shows the functional block diagram of TRF1208. The device essentially has two stages with
a voltage-feedback configuration.
TRF1208
+
–
–
+
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7.3 Feature Description
7.3.1 Fully-Differential Amplifier
The TRF1208 is a voltage-feedback fully differential amplifier (FDA) with a fixed gain by architecture. The
TRF1208 operates best as a single-ended to differential amplifier by terminating the INM pin with a 50‑Ω resistor
and driving the INP pin directly with no external components.
This amplifier has nonlinearity cancellation circuits that provide excellent linearity performance over a wide range
of frequencies.
The output of the amplifier has a low dc impedance. Therefore, if required, the output of the amplifier can be
matched to a load if required by adding the appropriate series resistors or attenuator pad.
7.3.2 Single Supply Operation
The TRF1208 operates on a single 3.3‑V supply. The input and output bias voltages are set internally. Therefore,
ac-couple the signal path on the board at all four RF input and output pins. Single-supply operation simplifies the
board design.
7.4 Device Functional Modes
The TRF1208 has two functional modes: active and power-down. These functional modes are controlled by the
PD pin as described in the previous section.
7.4.1 Power-Down Mode
The device features a power-down option. The PD pin is used to power down the amplifier. This pin supports
both 1.8‑V and 3.3‑V digital logic, and is referenced to ground. A logic 1 turns the device off and places the
device into a low-quiescent-current state.
When disabled, the signal path is still present through the internal circuits. Input signals applied to a disabled
device still appear at the outputs at some lower level through this path, as is the case for any disabled feedback
amplifier.
24
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
8.1.1 Driving a High-Speed ADC
A common application of the TRF1208 is to drive a high-speed ADC, such as the ADC12DJ5200RF or
AFE7950 that have differential input. Conventionally, passive baluns are used to drive Gsps ADCs because of
nonavailability of high-bandwidth, linear amplifiers. The TRF1208 is an active balun that has excellent bandwidth
flatness, gain, and phase imbalance comparable to or exceeding costly passive baluns.
Figure 8-1 shows a typical interface circuit for the ADC12DJ5200RF. Depending on the ADC and system
requirement, this circuit can be simplified or can be more complex.
Resistive matching pad
Anti-aliasing filter
50 Ω
TRF1208
50 Ω
ADC12DJ5200RF
Figure 8-1. Interfacing With the ADC12DJ5200RF
The figure shows two sections of the circuit between the driver amp and the ADC: namely, the matching pad
(or attenuator pad) and the antialiasing filter. Use small, form-factor, RF-quality, passive components for these
circuits. The output swing of the TRF1208 is designed to drive these ADCs full-scale, while at the same time not
overdrive the device This functionality avoids the need for any voltage limiting device at the ADC.
The following figures show typical interface circuits for AFE7950 RX and TX chains in which TRF1208 is the S2D
and D2S amplifier, respectively.
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3.3 V
RFC
RX path
120
1 nF
1 F
100 pF
12
OUTM
OUTP 11
9
VDD
6
5 INP
INM
100 pF
2 PD
8
TP1
3 TP2
GND 7
GND 10
13
TPAD
10
100 pF
10
(See NOTE A)
50
1
TRF1208 GND 4
GND
To AFE7950 RX
120
100 pF
10
10
A.
AFE matching network – component type (whether L or C) and values depend on the channel (A, B, C, D, FB1, FB2) and frequency
band.
Figure 8-2. Interfacing With the AFE7950 RX
1.8 V
RFC
TX path
RFC
100 pF
20
100 pF
100
From AFE7950 TX
20
(See NOTE A)
A.
12
OUTM
OUTP 11
9
VDD
6
5 INP
INM
TRF1208 GND
GND
GND
GND
TPAD
2 PD
8
TP1
3 TP2
100
100 pF
20
1
4
7
10
13
100 pF
50
100
1 nF
1 F
1 F
1 nF
3.3 V
AFE matching network – component type (whether L or C) and values depend on the channel (A, B, C, D) and frequency band.
Figure 8-3. Interfacing With the AFE7950 TX
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8.1.2 Calculating Output Voltage Swing
This section gives a quick reference of the output voltage swings for different input power levels. In this example,
the output is terminated with a 100‑Ω differential load and a power gain of 16 dB is assumed.
Pi, Vi
Po, Vo
TRF1208
100
50
50
Figure 8-4. Power and Voltage Levels
Voltage gain = 20 × log(VO / VI)
(1)
Power gain = 10 × log(PO / PI) = 10 × log((VO 2 / 100) / (VI 2 / 50)) = 20 × log(VO / VI) – 3 dB
(2)
Table 8-1. Output Voltage Swings for Different Input Power Levels
OUTPUT
(TRF1208)
INPUT
OUTPUT
(TRF1208B)
PI (dBm)
VI (VPP)
PO (dBm)
VO (VPP)
PO (dBm)
VO (VPP)
–20
0.063
–4
0.564
–10
0.283
–15
0.112
1
1.004
–5
0.503
–10
0.2
6
1.785
0
0.894
–9
0.224
7
2.002
1
1.004
8.1.3 Thermal Considerations
The TRF1208 is available in a 2‑mm × 2‑mm, WQFN-FCRLF package that has excellent thermal properties.
Connect the thermal pad underneath the chip to a ground plane. Short the ground plane to the other ground
pins of the chip at four corners, if possible, to allow heat propagation to the top layer of PCB. Use a thermal via
that connects the thermal pad plane on the top layer of the PCB to the inner layer ground planes to allow heat
propagation to the inner layers.
The total power dissipation needs to be limited to keep the device junction temperature below 150°C for
instantaneous power and below 125°C for continuous power.
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8.2 Typical Applications
An example of TRF1208 acting as ADC and DAC amplifiers for AFE7950 is explained in this section.
8.2.1 TRF1208 in Receive Chain
PD
GND
GND
TP2
This section describes an RF receiver chain in which TRF1208 is working as a S2D (SE-to-diff) amp and driving
a receive channel of AFE7950.
INM
RXIN+
OUTP
TRF1208
11
AFE7950
12
RXIN-
GND
VDD
TP1
OUTM
GND
TPAD
INP
Figure 8-5. TRF1208 in a Receive Chain With the AFE7950
The previous figure is a generic schematic of a design in which TRF1208 drives an AFE7950 receive channel.
The exact values of the components depend on the frequency band for which the AFE7950 front-end is
matched.
8.2.1.1 Design Requirements
The AFE7950 channel is required to be matched to 8.2 GHz.
28
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8.2.1.2 Detailed Design Procedure
The TRF1208 is configured as an S2D amplifier. The section close to TRF1208 output is an attenuator pad that
is meant for robust matching. The section close to AFE7950 is the matching network for the AFE that is channel
dependent. The matching components are chosen based on the AFE return-loss data and some trial and error
because the manufactured board parameters can influence the exact component values
Table 8-2 shows the bill of materials (BOM) values of the design for a channel that is matched to center
frequency of 8.2 GHz.
Table 8-2. Component Values of RX Chain With Center Frequency = 8.2 GHz
SECTION
DESIGNATOR
TYPE
VALUE
PART NUMBER
INSTALL / DNI
DC block cap
C117
Capacitor
100 nF
530L104KT
Install
DC block cap
C115
Capacitor
100 nF
530L104KT
Install
DC block cap
C111
Capacitor
100 nF
530L104KT
Install
DC block cap
C122
Capacitor
100 nF
530L104KT
Install
Attenuator
R74
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Attenuator
R70
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Attenuator
R69
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Attenuator
R67
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Attenuator
R71
Resistor
140 Ω
ERJ-1GNF1400C
Install
Attenuator
R68
Resistor
140 Ω
ERJ-1GNF1400C
Install
INM term
R82
Resistor
50 Ω
ERJ-1GEF49R9C
Install
Matching
C91
—
—
—
DNI
Matching
L20
—
—
—
DNI
Matching
C103
—
—
—
DNI
Matching
C83
—
—
—
DNI
Matching
L22
Inductor
0.1 nH
LQP03TG0N1B02#
Install
Matching
L18
Inductor
0.1 nH
LQP03TG0N1B02#
Install
Matching
C96
Inductor
0.1 nH
LQP03TG0N1B02#
Install
Matching
C87
Inductor
0.1 nH
LQP03TG0N1B02#
Install
Matching
C97
Capacitor
0.8 pF
02015J0R8PBSTR
Install
Matching
C88
Capacitor
0.8 pF
02015J0R8PBSTR
Install
Matching
C92
Inductor
0.3 nH
LQP03TG0N3B02#
Install
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8.2.2 TRF1208 in a Transmit Chain
PD
GND
TP2
GND
This section describes an RF transmit chain in which the TRF1208 works as a differential-to-single-ended
converter that converts the DAC output of the AFE7950 into a single-ended signal that drives a PA or a mixer.
TXOUT+
11
INM
OUTP
TRF1208
AFE7950
12
INP
GND
VDD
TP1
OUTM
GND
TPAD
TXOUT-
Figure 8-6. TRF1208 in a Transmit Chain With the AFE7950
The previous figure is a generic schematic of a design in which the TRF1208 is used with the AFE7950 in the
transmit chain. The exact values of the components depend on the frequency band for which the AFE7950
front-end is matched.
8.2.2.1 Design Requirements
The AFE7950 channel is required to be matched to 8.2 GHz.
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8.2.2.2 Detailed Design Procedure
The TRF1208 is configured as a D2S amplifier. The OUTM pin of the TRF1208 is terminated with 50 Ω and
OUTP is taken out as the SE output. The section close to TRF1208 input is an attenuator pad that is meant
for robust matching. The section close to AFE7950 is the matching network for the AFE, which is channel
dependent. Choose matching components based on the AFE return-loss data and some trial and error because
the board parameters can influence the exact values.
Table 8-3 shows the BOM values of the design for a channel that is matched to center frequency of 8.2 GHz.
Table 8-3. Component Values of TX Chain With Center Frequency = 8.2 GHz
SECTION
DESIGNATOR
TYPE
VALUE
PART NUMBER
INSTALL / DNI
Supply inductor
L25
Inductor
2 nH
LQP03TG2N0B02#
Install
Supply inductor
L26
Inductor
2 nH
LQP03TG2N0B02#
Install
Matching
C125
—
—
—
DNI
Matching
C142
—
—
—
DNI
Matching
C156
—
—
—
DNI
Matching
L34
Capacitor
0.7 pF
02015J0R7PBSTR
Install
Matching
L33
Capacitor
0.7 pF
02015J0R7PBSTR
Install
Matching
C134
Inductor
0.5 nH
LQP03TG0N5B02#
Install
Matching
C140
Inductor
0.1 nH
LQP03TG0N1B02#
Install
Matching
C139
Inductor
0.1 nH
LQP03TG0N1B02#
Install
DC block cap
C149
Capacitor
100 nF
530L104KT
Install
DC block cap
C150
Capacitor
100 nF
530L104KT
Install
DC block cap
C151
Capacitor
100 nF
530L104KT
Install
DC block cap
C153
Capacitor
100 nF
530L104KT
Install
Attenuator
R88
Resistor
20 Ω
ERJ-1GNF20R0C
Install
Attenuator
R89
Resistor
20 Ω
ERJ-1GNF20R0C
Install
Attenuator
R92
Resistor
20 Ω
ERJ-1GNF20R0C
Install
Attenuator
R93
Resistor
20 Ω
ERJ-1GNF20R0C
Install
Attenuator
R90
Resistor
57.6 Ω
ERJ-1GNF57R6C
Install
Attenuator
R91
Resistor
57.6 Ω
ERJ-1GNF57R6C
Install
Term
R105
Resistor
0Ω
ERJ-1GN0R00C
Install
Term
R107
Resistor
0Ω
ERJ-1GN0R00C
Install
Term
R96
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Term
R97
Resistor
10 Ω
ERJ-1GEF10R0C
Install
Term
R108
Resistor
50 Ω
ERJ-1GEF49R9C
Install
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8.3 Power Supply Recommendations
The TRF1208 requires a single 3.3‑V supply. Supply decoupling is critical to high-frequency performance.
Typically two or three capacitors are used for supply decoupling. For the lowest-value capacitor, use a small,
form-factor component that is placed closest to the VDD pin of the device. Use a bulk decoupling capacitor of
a larger value and size that can be placed next to the small capacitor. Additional layout recommendations are
given in the Layout section.
8.4 Layout
8.4.1 Layout Guidelines
The TRF1208 is a wideband, voltage-feedback amplifier with approximately 10 dB or 16 dB of gain. When
designing with a wideband RF amplifier with relatively high gain, make sure to take certain board layout
precautions to maintain stability and optimized performance. Use a multilayer board to maintain signal and
power integrity and thermal performance. Figure 8-7 shows an example of a good layout. In this figure, only the
top layer is shown.
Route the RF input and output lines as grounded coplanar waveguide (GCPW) lines. For the second layer, use
a continuous ground layer without any ground-cuts near the amplifier area. Match the output differential lines
in length to minimize phase imbalance. Use small footprint passive components wherever possible. Also take
care of the input side layout. Use a 50-ohm line for the INP routing, and make sure the termination on INM pin
has low parasitics by placing the ac-coupling capacitor and the 50‑Ω resistor very close to the device. Use an
RF-quality, 50‑Ω resistor for termination. Make sure that the ground planes on the top and internal layers are well
stitched with vias.
Place thermal vias under the device that connect the top thermal pad with ground planes in the inner layers
of the PCB. For improved heat dissipation, connect the thermal pad to the top layer ground plane through the
ground pins (see the Layout Example in the next section).
8.4.2 Layout Example
50-ohm terminaon
resistor (0201) on INM pin
very close to the cap
dc-blocking caps (0402) placed
very close to the device
Matched dieren al
output roung with
symmetric ground vias
TRF1208 device
Thermal via under the device,
connected to top layer ground for
improved heat dissipaon
Supply decoupling caps (0201 &
0402) placed very close to the device
Figure 8-7. Layout Example: Placement and Top Layer Layout
The TRF1208 can be evaluated using the TRF1208 EVM board, which can be ordered from TRF1208 product
folder. Additional information about the evaluation board construction and test setup is given in the TRF1208
EVM User's Guide.
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9 Device and Documentation Support
9.1 Device Support
9.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
9.2 Documentation Support
9.2.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, TRF0206-SP EVM User's Guide
9.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
9.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
9.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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26-Aug-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TRF1208BRPVR
ACTIVE
WQFN-HR
RPV
12
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
128L
Samples
TRF1208RPVR
ACTIVE
WQFN-HR
RPV
12
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
1208
Samples
TRF1208RPVT
ACTIVE
WQFN-HR
RPV
12
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
1208
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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