TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
0.35-GHz TO 4-GHz QUADRATURE MODULATORS
Check for Samples: TRF370315, TRF370333
FEATURES
APPLICATIONS
•
•
GND
BBIN
BBIP
GND
GND
23
22
21
20
19
RGE PACKAGE
(TOP VIEW)
VCC
3
16
RF_OUT
LON
4
15
NC
GND
5
14
GND
NC
6
13
NC
12
LOP
GND
GND
11
17
GND
2
10
GND
BBQP
VCC
9
18
BBQN
1
8
NC
GND
•
•
•
•
•
Cellular Base Transceiver Station Transmit
Channel
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Wireless Local Loop
Wireless MAN Wideband Transceivers
SPACE
THE FINAL FRONTIER
24
•
•
•
•
•
•
•
•
75-dBc Single-Carrier WCDMA ACPR
at –11-dBm Channel Power
Low Noise Floor: –163 dBm/Hz
OIP3 of 23 dBm
P1dB of 9 dBm
Unadjusted Carrier Feedthrough of –40 dBm
Unadjusted Side-Band Suppression of –40 dBc
Single Supply: 4.5 V–5.5 V Operation
Silicon Germanium Technology
TRF370333 With 3.3-V CM at I, Q Baseband
Inputs
TRF370315 With 1.5-V CM at I, Q Baseband
Inputs
7
2
NC
1
P0024-04
DESCRIPTION
The TRF370315 and TRF370333 are low-noise direct quadrature modulators, capable of converting complex
modulated signals from baseband or IF directly up to RF. The TRF370315 and TRF370333 are ideal for
high-performance direct RF modulation from 350 MHz up to 4 GHz. These modulators are implemented as a
double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF
amplifier capable of driving a single-ended 50-Ω load without any need of external components. The TRF370333
and TRF370315 devices have different common-mode voltage ratings at the I/Q baseband inputs. The
TRF370315 requires a 1.5-V common-mode voltage, and the TRF370333 requires a 3.3-V common-mode
voltage.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
VCC
GND
BBIN
BBIP
GND
GND
24
23
22
21
20
19
FUNCTIONAL BLOCK DIAGRAM
NC
1
18
VCC
GND
2
17
GND
LOP
3
16
RF_OUT
LON
4
15
NC
GND
5
14
GND
NC
6
13
NC
S
7
8
9
10
11
12
NC
GND
BBQN
BBQP
GND
GND
0/90
B0175-01
NOTE: NC = No connection
2
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BBIN
22
I
In-phase input
BBIP
21
I
In-phase input
BBQN
9
I
In-quadrature input
BBQP
10
I
In-quadrature input
GND
2, 5, 8,11,
12, 14, 17,
19, 20, 23
–
Ground
LON
4
I
Local oscillator input
LOP
3
I
Local oscillator input
NC
1, 6, 7, 13,
15
–
No connect
16
O
RF output
18, 24
–
Power supply
RF_OUT
VCC
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range (unless otherwise noted).
Supply voltage range
Digital I/O voltage range
VALUE (2)
UNIT
–0.3 V to 6
V
–0.3 V to VI + 0.3
V
TJ
Operating virtual junction temperature range
–40 to 150
°C
TA
Operating ambient temperature range
–40 to 85
°C
Tstg
Storage temperature range
–65 to 150
°C
ESD
Electrostatic discharge ratings
Human body model (HBM)
75
V
Charged device model (CDM)
75
V
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
Over operating free-air temperature range (unless otherwise noted).
VCC
Power-supply voltage
MIN
NOM
MAX
4.5
5
5.5
UNIT
V
THERMAL CHARACTERISTICS
PARAMETER
RθJA
Thermal resistance, junction-to-ambient
RθJC
Thermal resistance, junction-to-case
Copyright © 2006–2011, Texas Instruments Incorporated
TEST CONDITIONS
High-K board, still air
VALUE
UNIT
29.4
°C/W
18.6
°C/W
3
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
ICC
Total supply current (1.5 V CM)
TA = 25°C
195
205
Total supply current (3.3 V CM)
TA = 25°C
210
235
4
GHz
0
12
dBm
mA
LO Input (50-Ω, Single-Ended)
LO frequency range
fLO
0.35
–5
LO input power
LO port return loss
15
dB
Baseband Inputs
VCM
I and Q input dc common voltage
BW
1-dB input frequency bandwidth
TRF370333
3.3
TRF370315
1.5
V
350
Input impedance, resistance
ZI(single
Input impedance, parallel capacitance
ended)
Input impedance, resistance
Input impedance, parallel capacitance
MHz
10
TRF370333
TRF370315
kΩ
3
pF
5
kΩ
3
pF
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 350 MHz at 0 dBm, TRF370333 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
MIN
TYP
MAX
UNIT
–4.18
dB
TRF370333: Output RMS voltage over input I (or Q) RMS
voltage
–4.0
dB
9.4
dBm
24.5
dBm
Measured at fLO + 2 × fBB
73.8
dBm
Carrier feedthrough
Unadjusted
35.6
dBm
Sideband suppression
Unadjusted
33.8
dBc
Output noise floor
(1)
TEST CONDITIONS
TRF370315: Output RMS voltage over input I (or Q) RMS
voltage
DC only to BB inputs, 13 MHz offset from fLO
–158.0
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–152.6
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–157.4
dBm/Hz
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 400 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
TEST CONDITIONS
MAX
UNIT
dB
TRF370333: Output RMS voltage over input I (or Q) RMS
voltage
–1.905
dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
4
TYP
–2.409
P1dB
(1)
MIN
TRF370315: Output RMS voltage over input I (or Q) RMS
voltage
9.4
dBm
23
dBm
62
dBm
Unadjusted
–37
dBm
Unadjusted
–39
dBc
20
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 900 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
TEST CONDITIONS
MIN
dB
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.79
dB
Output compression point
Output IP3
9
dBm
23
IP2
Output IP2
Measured at fLO + 2 × fBB
dBm
63
dBm
Carrier feedthrough
Sideband suppression
Unadjusted
–37
dBm
Unadjusted
–42
dBc
9
dB
20
Output return loss
Error vector magnitude (rms)
DC only to BB inputs, 13 MHz offset from fLO
–160.4
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–156.6
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–158.5
1 EDGE signal, Pout = –5 dBm
0.59%
1 EDGE signal, Pout = 0 dBm
0.63%
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15 dBm, 3rd harmonic of LO = –33 dBm (2)
(1)
(2)
UNIT
–3.552
IP3
EVM
MAX
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
P1dB
Output noise floor
TYP
dBm/Hz
1%
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1800 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
G
Voltage gain
(1)
TEST CONDITIONS
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.367
dB
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
9.5
dBm
23
dBm
55
dBm
Unadjusted
–40
dBm
Unadjusted
–47
dBc
8
dB
20
Output return loss
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–162.6
–160
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–159.4
1 EDGE signal, Pout = –5 dBm
0.66%
1 EDGE signal, Pout = 0 dBm
0.74%
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15.5 dBm, 3rd harmonic of LO = –30 dBm (2)
(1)
(2)
UNIT
dB
Output compression point
Error vector magnitude (rms)
MAX
–3.345
IP3
EVM
TYP
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
P1dB
Output noise floor
MIN
dBm/Hz
1%
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
The second- and third-harmonic tests were made independently at each frequency.
Copyright © 2006–2011, Texas Instruments Incorporated
5
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1960 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
P1dB
IP3
IP2
TEST CONDITIONS
MIN
UNIT
–3.449
dB
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.479
dB
Output compression point
9.5
Output IP3, TRF370315
20
23
Output IP3, TRF370333
18
20
dBm
dBm
Output IP2
Measured at fLO + 2 × fBB
55
dBm
Carrier feedthrough
Unadjusted
–40
dBm
Sideband suppression
Unadjusted
–47
dBc
8
dB
–162.6
DC only to BB inputs, 13 MHz offset from fLO
Output noise floor
Error vector magnitude (rms)
–160
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–159.4
1 EDGE signal, Pout = –5 dBm
0.66%
1 EDGE signal, Pout = 0 dBm
0.74%
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15.5 dBm, 3rd harmonic of LO = –30 dBm (2)
(1)
(2)
MAX
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
Output return loss
EVM
TYP
dBm/Hz
1%
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2140 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
P1dB
IP3
IP2
TEST CONDITIONS
UNIT
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.791
dB
9.5
Output IP3, TRF370315
20
23
Output IP3, TRF370333
18
21
dBm
dBm
Output IP2
Measured at fLO + 2 × fBB
58
dBm
Carrier feedthrough
Unadjusted
–40
dBm
Sideband suppression
Unadjusted
–47
dBc
8.5
dB
Adjacent-channel power
ratio
20-MHz offset from fLO; dc only to BB inputs
–163
20-MHz offset from fLO; 1 WCDMA signal;
Pin = –20.5 dBVrms (I and Q input)
–162
1 WCDMA signal; Pout = –13 dBm
–75.8
1 WCDMA signal; Pout = –9 dBm
–72
4 WCDMA signals; Pout = –23 dBm per carrier
–68
1 WCDMA signal; Pout = –13 dBm
Alternate-channel power
ratio
1 WCDMA signal; Pout = –9 dBm
4 WCDMA signals; Pout = –23 dBm per carrier
6
MAX
dB
Output compression point
Output noise floor
(1)
TYP
–3.432
Output return loss
ACPR
MIN
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
dBm/Hz
dBc
–79
–80.5
dBc
–69
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2500 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
TEST CONDITIONS
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–2.892
dB
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–1.379
dB
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
(1)
MIN
9.5
dBm
21
dBm
63
dBm
Unadjusted
–38
dBm
Unadjusted
–47
dBc
18
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 3600 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–1.265
dB
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
1.529
dB
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Unadjusted
Sideband suppression
Unadjusted
–45
dBc
(1)
20
9.5
dBm
23
dBm
63
dBm
–41
dBm
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 4000 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
Voltage gain (1)
G
TEST CONDITIONS
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–2.242
dB
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
0.543
dB
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Measured at fLO + 2 × fBB
Carrier feedthrough
Sideband suppression
(1)
MIN
9
dBm
22
dBm
50
dBm
Unadjusted
–37
dBm
Unadjusted
–40
dBc
19
Single 4-MHz CW baseband input tone, differential-ended 196 VRMS.
Copyright © 2006–2011, Texas Instruments Incorporated
7
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
BASEBAND VOLTAGE
OUTPUT POWER
vs
FREQUENCY AND TEMPERATURE
0
15
TRF3703-15
TRF3703-33
−1
–40°C
POUT − Output Power − dBm
POUT - Output Power at 1.8 GHz - dBm
10
5
0
-5
-10
−2
−3
−4
85°C
25°C
−5
−6
−7
−8
-15
LO = 0 dB
VCC = 5 V
−9
−10
-20
0.01
0.1
0
1
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
VBB - Baseband Voltage, Single-Ended, RMS - V
G010
Figure 1.
Figure 2.
OUTPUT POWER
vs
FREQUENCY AND SUPPLY VOLTAGE
OUTPUT POWER
vs
FREQUENCY AND LO POWER
0
0
5.5 V
−1
POUT − Output Power − dBm
POUT − Output Power − dBm
−1
−2
−3
−4
4.5 V
5V
−5
−6
−7
0 dBm
−2
5 dBm
−3
−4
–5 dBm
−5
−8
−6
LO = 0 dB
TA = 25°C
−9
−10
VCC = 5 V
TA = 25°C
−7
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G011
Figure 3.
8
G012
Figure 4.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
P1dB
vs
FREQUENCY AND TEMPERATURE
P1dB
vs
FREQUENCY AND SUPPLY VOLTAGE
14
12
LO = 0 dB
VCC = 5 V
12
5.5 V
10
10
5V
P1dB − dBm
P1dB − dBm
8
8
25°C
85°C
–40°C
6
4.5 V
6
4
4
2
2
LO = 0 dB
TA = 25°C
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G001
G002
Figure 5.
Figure 6.
P1dB
vs
FREQUENCY AND LO POWER
TRF370315
OIP3
vs
FREQUENCY AND TEMPERATURE
30
12
28
–5 dBm
10
5 dBm
24
8
0 dBm
OIP3 − dBm
P1dB − dBm
25°C
85°C
26
6
4
22
20
18
–40°C
16
14
2
VCC = 5 V
TA = 25°C
LO = 0 dBm
VCC = 5 V
12
10
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G014
G003
Figure 7.
Copyright © 2006–2011, Texas Instruments Incorporated
Figure 8.
9
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
TRF370333
OIP3
vs
FREQUENCY AND TEMPERATURE
TRF370315
OIP3
vs
FREQUENCY AND SUPPLY VOLTAGE
30
30
28
28
26
24
24
22
22
OIP3 − dBm
OIP3 − dBm
4.5 V
26
20
18
–40°C
16
5V
25°C
85°C
20
5.5 V
18
16
14
14
LO = 0 dB
VCC = 5 V
12
LO = 0 dBm
TA = 25°C
12
10
10
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G027
G015
Figure 9.
Figure 10.
TRF370333
OIP3
vs
FREQUENCY AND SUPPLY VOLTAGE
TRF370315
OIP3
vs
FREQUENCY AND LO POWER
40
30
LO = 0 dB
TA = 25°C
36
5V
26
4.5 V
32
24
OIP3 − dBm
OIP3 − dBm
+5 dBm
28
28
24
22
–5 dBm
20
0 dBm
18
16
20
14
16
5.5 V
VCC = 5 V
TA = 25°C
12
12
10
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G028
Figure 11.
10
G013
Figure 12.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
TRF370333
OIP3
vs
FREQUENCY AND LO POWER
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
40
0
36
SS − Unadjusted Sideband Suppression − dBc
VCC = 5 V
TA = 25°C
0 dBm
OIP3 − dBm
32
28
24
+5 dBm
20
–5 dBm
16
12
LO = 0 dB
POUT = –3 dBm
VCC = 5 V
−10
−20
−30
85°C
−40
−50
–40°C
−60
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
f − Frequency − MHz
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G029
G007
Figure 13.
Figure 14.
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND SUPPLY VOLTAGE
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND LO POWER
0
0
LO = 0 dB
POUT = –3 dBm
TA = 25°C
−10
SS − Unadjusted Sideband Suppression − dBc
SS − Unadjusted Sideband Suppression − dBc
25°C
−20
−30
5V
−40
5.5 V
−50
4.5 V
−60
VCC = 5 V
POUT = –3 dBm
TA = 25°C
−10
−20
−30
–5 dBm
0 dBm
−40
−50
5 dBm
−60
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G008
Figure 15.
Copyright © 2006–2011, Texas Instruments Incorporated
G009
Figure 16.
11
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−20
−30
SS − Adjusted Sideband Suppression − dBc
SS − Adjusted Sideband Suppression − dBc
−20
Adj at 942.6 MHz
VCC = 5 V
−40
−50
–40°C
25°C
−60
−70
−30
Adj at 1900 MHz
VCC = 5 V
−40
−50
85°C
−60
–40°C
25°C
−70
85°C
−80
900
920
940
960
980
−80
1850
1000
1870
1890
1910
1930
G017
G016
Figure 17.
Figure 18.
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND SUPPLY VOLTAGE
−154
Adj at 2140 MHz
VCC = 5 V
−156
Noise at 13-MHz Offset − dBm/Hz
SS − Adjusted Sideband Suppression − dBc
−20
−30
−40
85°C
−50
–40°C
−60
−70
POUT = –5 dBm
LO = 5 dBm
TA = 25°C
5.5 V
−158
−160
5V
−162
−164
4.5 V
−166
25°C
−80
2100
2120
2140
2160
2180
2200
−168
0.0
0.5
1.0
1.5
2.0
2.5
3.5
4.0
G019
G018
Figure 19.
3.0
f − Frequency − GHz
f − Frequency − MHz
12
1950
f − Frequency − MHz
f − Frequency − MHz
Figure 20.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
−154
−154
85°C
−156
Noise at 13-MHz Offset − dBm/Hz
Noise at 13-MHz Offset − dBm/Hz
−156
−158
25°C
−160
−162
−164
–40°C
−166
−168
0.0
POUT = 0 dBm
LO = 5 dBm
VCC = 5 V
0.5
1.0
85°C
−158
25°C
−160
−162
−164
1.5
2.0
2.5
3.0
3.5
−168
0.0
4.0
–40°C
POUT = –5 dBm
LO = 5 dBm
VCC = 5 V
−166
0.5
1.0
1.5
2.0
2.5
3.0
3.5
G021
G020
Figure 21.
Figure 22.
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND SUPPLY VOLTAGE
−154
0
POUT = –10 dBm
LO = 5 dBm
VCC = 5 V
−158
CS − Unadjusted Carrier Feedthrough − dBm
Noise at 13-MHz Offset − dBm/Hz
−156
85°C
−160
25°C
−162
−164
−166
–40°C
−168
0.0
4.0
f − Frequency − GHz
f − Frequency − GHz
LO = 0 dB
TA = 25°C
−10
−20
5V
−30
5.5 V
−40
−50
4.5 V
−60
−70
−80
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
f − Frequency − GHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G022
Figure 23.
Copyright © 2006–2011, Texas Instruments Incorporated
G025
Figure 24.
13
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
CS − Unadjusted Carrier Feedthrough − dBm
0
LO = 0 dB
VCC = 5 V
−10
−20
−30
85°C
−40
−50
25°C
−60
–40°C
−70
−80
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G026
Figure 25.
14
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
•
•
•
•
•
•
•
See Figure 26 for proper connection of the TRF3703315 and TRF370333 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the
TRF370315.
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This
pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.
ESD Sensitivity
RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices
should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated
level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board
(PCB). Follow these guidelines for optimal ESD protection:
• Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,
customers’ ESD precautions should be consistent with these ratings.
• The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly
connect the device pins to off-board circuits.
Copyright © 2006–2011, Texas Instruments Incorporated
15
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
J3
IN
J4
IP
1
1
SMA_END
2
3
4
5
5
4
3
2
SMA_END
W1
2POS_JUMPER
W2
2POS_JUMPER
C6
+
R2
R3
0
0
C5
1000 pF
C7
+
4.7uF
19
GND
GND
20
21
IP
NC
GND
GND
NC
8
5
4
3
2
7
100 pF
J5
QN
1
R5
0
0
16
R1
15
0
C3
1
SMA_END
100 pF
C8
C9
0.1 mF
(Note 1)
0.1 mF
(Note 1)
14
13
J6
QP
1
SMA_END
2
3
4
5
5
4
3
2
SMA_END
R4
J7
RF_OUT
17
GND
NC
18
2
3
4
5
LON
NC
1
SMA_END
RF_OUT
U1
TRF3703
1000 pF
12
6
LOP
GND
C2
GND
11
5
J2
LON
GND
QP
4
VccMOD
QN
3
NC
9
5
4
3
2
2
10
1
100 pF
GND
SMA_END
IN
1
GND
VccLO
C1
23
24
J1
LOP
22
4.7 mF
C4
S0214-01
(1)
Do not install.
Figure 26. TRF3703 EVM Schematic
16
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
Figure 27 shows the top view of the TRF3703 EVM board.
GND
+5 V
+5 V
BBIN
GND
BBIP
LOP
RF_OUT
LON
50 W
BBQP
BBQN
K001
Figure 27. TRF3703 EVM Board Layout
Table 1. Bill of Materials for TRF3703 EVM
Value
Footprint
QTY
Part Number
Vendor
Digi-Key Number
REF DES
Tantalum
4.7-μF, 10-V,
10% capacitor
3216
2
T491A475K010AS
KEMET
399-1561-1-ND
C6, C7
1000-pF, 50-V,
5% capacitor
603
2
ECJ-1VC1H102J
Panasonic
PCC2151CT-ND
C4, C5
100-pF, 50-V,
5% capacitor
603
3
ECJ-1VC1H101J
Panasonic
PCC101ACVCT-ND
C1, C2, C3
Capacitor
603
0
0-Ω resistor,
1/10-W, 5%
603
5
ERJ-3GEY0R00V
Panasonic
P0.0GCT-ND
R1, R2, R3,
R4, R5
Copyright © 2006–2011, Texas Instruments Incorporated
Not
Installed
C8, C9
17
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
Table 1. Bill of Materials for TRF3703 EVM (continued)
Value
Footprint
TRF3703
QTY
Part Number
Vendor
Digi-Key Number
TI
REF DES
24-QFN-PP4X4MM
1
SMA connectors SMA_END_
SMALL
6
16F3627
Newark
142-0711-821
J1, J2, J3,
J4, J5, J6,
J7
2POS_HEADER 2POS_JUMP
2
HTSW-150-07-L-S
SAMTEC
N/A
W1, W2
Not
Installed
U1
GSM Applications
The TRF370315 and TRF370333 are suited for GSM applications because of the high linearity and low noise
level over the entire recommended operating range. These devices also have excellent EVM performance, which
makes them ideal for the stringent GSM/EDGE applications.
WCDMA Applications
The TRF370315 and TRF370333 are also optimized for WCDMA applications where both adjacent-channel
power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of
high-performance digital-to-analog converters as depicted in Figure 28, excellent ACPR levels were measured
with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, fLO = 2140 MHz for exact ACPR
values.
16
TRF3703
I/Q
Modulator
DAC5687
RF_OUT
16
CLK1
CLK2
VCXO
TRF3761
PLL
LO Generator
CDCM7005
Clock Gen
Ref Osc
B0176-01
Figure 28. Typical Transmit Setup Block Diagram
18
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is attenuated in the output
spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the
pins of the TRF370315 and TRF370333 are perfectly matched to have the same dc offset (VCM). This includes
all four baseband inputs: I, I, Q, and Q. This is measured in dBm.
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted
around their theoretical value of VCM to yield the maximum suppression of the LO component in the output
spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the
output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs
delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. This is
measured in dBc.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around
their theoretical values to maximize the amount of sideband suppression. This is measured in dBc.
Suppressions Overtemperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Figure 29 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet. The graph assumes a baseband input of 50 kHz.
10
POUT
0
P − Power − dBm
−10
−20
3RD LSB
(dBc)
SBS
(dBc)
3RD LSB
LSB
(Undesired)
2ND USB
(dBc)
C
(dBm)
−30
−40
−50
−60
−70
2ND LSB
−80
−200 −150 −100 −50
USB
(Desired)
2ND USB
Carrier
0
3RD USB
50
100
150
200
f − Frequency Offset − kHz (Relative to Carrier)
G024
Figure 29. Graphical Illustration of Common Terms
Copyright © 2006–2011, Texas Instruments Incorporated
19
TRF370315
TRF370333
SLWS184J – MARCH 2006 – REVISED MAY 2011
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (July, 2010) to Revision J
Page
•
Changed voltage gain specifications for fLO = 350-MHz performance data ......................................................................... 4
•
Updated voltage gain specifications for fLO = 400-MHz performance data .......................................................................... 4
•
Revised voltage gain specifications for fLO = 900-MHz performance data ........................................................................... 5
•
Changed voltage gain specifications for fLO = 1800-MHz performance data ....................................................................... 5
•
Revised voltage gain specifications for fLO = 1960-MHz performance data ......................................................................... 6
•
Updated voltage gain specifications for fLO = 2140-MHz performance data ........................................................................ 6
•
Revised voltage gain specifications for fLO = 2500-MHz performance data ......................................................................... 7
•
Changed voltage gain specifications for fLO = 3600-MHz performance data ....................................................................... 7
•
Updated voltage gain specifications for fLO = 4000-MHz performance data ........................................................................ 7
•
Replaced Figure 1 ................................................................................................................................................................ 8
Changes from Revision H (January, 2010) to Revision I
Page
•
Changed document title to reflect 0.35-GHz minimum operating level ................................................................................ 1
•
Updated Description section to reflect 350-MHz minimum operation ................................................................................... 1
•
Changed LO frequency range minimum specification from 0.4 GHz to 0.35 GHz ............................................................... 4
•
Added Electrical Characteristics table for fLO = 350-MHz performance data ....................................................................... 4
20
Copyright © 2006–2011, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TRF370315IRGER
ACTIVE
VQFN
RGE
24
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0315
Samples
TRF370315IRGET
ACTIVE
VQFN
RGE
24
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0315
Samples
TRF370333IRGER
ACTIVE
VQFN
RGE
24
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0333
Samples
TRF370333IRGET
ACTIVE
VQFN
RGE
24
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0333
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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