TRF370317
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SLWS209B – MARCH 2008 – REVISED JANUARY 2010
0.4-GHz TO 4-GHz QUADRATURE MODULATOR
Check for Samples: TRF370317
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
1
2
•
•
•
•
•
•
•
•
76-dBc Single-Carrier WCDMA ACPR at –8
dBm Channel Power
Low Noise Floor: –163 dBm/Hz
OIP3 of 26.5 dBm
P1dB of 12 dBm
Unadjusted Carrier Feedthrough of –40 dBm
Unadjusted Side-Band Suppression of –45 dBc
Single Supply: 4.5-V–5.5-V Operation
Silicon Germanium Technology
1.7-V CM at I, Q Baseband Inputs
Cellular Base Station Transceiver
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Multicarrier GSM
WiMAX: 802.16d/e
3GPP: LTE
Wireless MAN Wideband Transceivers
VCC
GND
BBIN
BBIP
GND
GND
24
23
22
21
20
19
RGE PACKAGE
(TOP VIEW)
LON
4
15
NC
GND
5
14
GND
NC
6
13
NC
12
RF_OUT
GND
16
11
3
GND
LOP
10
GND
BBQP
17
9
2
BBQN
GND
8
VCC
GND
18
7
1
NC
NC
P0024-04
DESCRIPTION
The TRF370317 is a low-noise direct quadrature modulator, capable of converting complex modulated signals
from baseband or IF directly up to RF. The TRF370317 is a high-performance, superior-linearity device that is
ideal to RF frequencies of 400 MHz through 4 GHz. The modulator is implemented as a double-balanced mixer.
The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a
single-ended 50-Ω load without any need of external components. The TRF370317 requires a 1.7-V
common-mode voltage for optimum linearity performance.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2010, Texas Instruments Incorporated
TRF370317
SLWS209B – MARCH 2008 – REVISED JANUARY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
VCC
GND
BBIN
BBIP
GND
GND
24
23
22
21
20
19
Functional Block Diagram
NC
1
18
VCC
GND
2
17
GND
LOP
3
16
RF_OUT
LON
4
15
NC
GND
5
14
GND
NC
6
13
NC
S
7
8
9
10
11
12
NC
GND
BBQN
BBQP
GND
GND
0/90
B0175-01
NOTE: NC = No connection
2
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SLWS209B – MARCH 2008 – REVISED JANUARY 2010
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BBIN
22
I
In-phase negative input
BBIP
21
I
In-phase positive input
BBQN
9
I
Quadrature-phase negative input
BBQP
10
I
Quadrature-phase positive input
GND
2, 5, 8,11,
12, 14, 17,
19, 20, 23
–
Ground
LON
4
I
Local oscillator negative input
LOP
3
I
Local oscillator positive input
NC
1, 6, 7, 13,
15
–
No connect
16
O
RF output
18, 24
–
Power supply
RF_OUT
VCC
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE (2)
UNIT
Supply voltage range
–0.3 V to 6
V
TJ
Operating virtual junction temperature range
–40 to 150
°C
TA
Operating ambient temperature range
–40 to 85
°C
Tstg
Storage temperature range
–65 to 150
°C
ESD
Electrostatic discharge ratings
Human body model (HBM)
75
V
Charged device model (CDM)
75
V
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
VCC
Power-supply voltage
MIN
NOM
MAX
4.5
5
5.5
UNIT
V
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
RqJA
Thermal resistance, junction-to-ambient
RqJC
Thermal resistance, junction-to-case
High-K board, still air
VALUE
UNIT
29.4
°C/W
18.6
°C/W
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
205
245
mA
4
GHz
0
12
dBm
DC Parameters
ICC
Total supply current (1.7 V CM)
TA = 25°C
LO Input (50-Ω, Single-Ended)
fLO
LO frequency range
0.4
LO input power
–5
LO port return loss
15
dB
Baseband Inputs
VCM
I and Q input dc common voltage
BW
1-dB input frequency bandwidth
ZI(single
ended)
1.7
350
MHz
Input impedance, resistance
5
kΩ
Input impedance, parallel
capacitance
3
pF
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 400 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Carrier feedthrough
Sideband suppression
4
TEST CONDITIONS
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
–1.9
MAX
UNIT
dB
11
dBm
fBB = 4.5, 5.5 MHz
24.5
dBm
fBB = 4.5, 5.5 MHz
68
dBm
Unadjusted
–38
dBm
Unadjusted
–40
dBc
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SLWS209B – MARCH 2008 – REVISED JANUARY 2010
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 945.6 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
UNIT
G
Voltage gain
–2.5
P1dB
Output compression point
IP3
Output IP3
fBB = 4.5, 5.5 MHz
IP2
Output IP2
fBB = 4.5, 5.5 MHz
Carrier feedthrough
Unadjusted
Sideband suppression
Unadjusted
–42
dBc
Output return loss
Output noise floor
EVM
(1)
dB
11
dBm
25
dBm
65
dBm
–40
dBm
9
≥13 MHz offset from fLO; Pout = –5 dBm
dB
–163
Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1)
dBm/Hz
0.64%
The contribution from the source of about 0.28% is not de-embedded from the measurement.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 1800 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
Output rms voltage over input I (or Q) rms voltage
MIN
TYP
MAX
UNIT
G
Voltage gain
P1dB
Output compression point
12
dBm
IP3
Output IP3
fBB = 4.5, 5.5 MHz
26
dBm
IP2
Output IP2
fBB = 4.5, 5.5 MHz
60
dBm
Carrier feedthrough
Unadjusted
–40
dBm
Sideband suppression
Unadjusted
–50
dBc
8
dB
Output return loss
Output noise floor
EVM
(1)
≥13 MHz offset from fLO; Pout = –5 dBm
Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1)
–2.5
–162
dB
dBm/Hz
0.41%
The contribution from the source of about 0.28% is not de-embedded from the measurement.
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ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 1960 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
–2.5
UNIT
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
fBB = 4.5, 5.5 MHz
IP2
Output IP2
fBB = 4.5, 5.5 MHz
Carrier feedthrough
Unadjusted
Sideband suppression
Unadjusted
–50
dBc
23.5
Output return loss
Output noise floor
dBm
26.5
dBm
60
dBm
–38
dBm
8
≥13 MHz offset from fLO; Pout = –5 dBm
Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1)
0.43%
1 WCDMA signal; Pout = –8 dBm
–74
ACPR (2)
Adjacent-channel power
ratio
2 WCDMA signals; Pout = –11 dBm per carrier
–68
4 WCDMA signals; Pout = –14 dBm per carrier
–67
1 WCDMA signal; Pout = –8 dBm
–78
2 WCDMA signals; Pout = –11 dBm per carrier
–72
4 WCDMA signals; Pout = –14 dBm per carrier
–69
(1)
(2)
dB
–162.5
EVM
Alternate-channel power
ratio
dB
12
dBm/Hz
dBc
dBc
The contribution from the source of about 0.28% is not de-embedded from the measurement.
Measured with DAC5687 as source generator
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 2140 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Carrier feedthrough
Sideband suppression
TEST CONDITIONS
Output rms voltage over input I (or Q) rms voltage
ACPR (1)
Adjacent-channel power
ratio
Alternate-channel power
ratio
(1)
6
TYP
–2.4
MAX
UNIT
dB
12
dBm
fBB = 4.5, 5.5 MHz
26.5
dBm
fBB = 4.5, 5.5 MHz
66
dBm
Unadjusted
–38
dBm
Unadjusted
–50
dBc
8.5
dB
Output return loss
Output noise floor
MIN
≥13 MHz offset from fLO ; Pout = –5 dBm
–162.5
1 WCDMA signal; Pout = –8 dBm
–72
2 WCDMA signal; Pout = –11 dBm per carrier
–67
4 WCDMA signals; Pout = –14 dBm per carrier
–66
1 WCDMA signal; Pout = –8 dBm
–78
2 WCDMA signal; Pout = –11 dBm
–74
4 WCDMA signals; Pout = –14 dBm per carrier
–68
dBm/Hz
dBc
dBc
Measured with DAC5687 as source generator
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ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 2500 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
MAX
P1dB
Output compression point
IP3
Output IP3
fBB = 4.5, 5.5 MHz
IP2
Output IP2
fBB = 4.5, 5.5 MHz
Carrier feedthrough
Unadjusted
Sideband suppression
Unadjusted
–47
dBc
WiMAX 5-MHz carrier, Pout = –8 dBm, LO = 8 dBm
–47
dB
WiMAX 5-MHz carrier, Pout = 0 dBm, LO = 8 dBm
–45
dB
Error vector magnitude (rms)
–1.6
UNIT
Voltage gain
EVM
Output rms voltage over input I (or Q) rms voltage
TYP
G
dB
13
dBm
29
dBm
65
dBm
–37
dBm
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 3500 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Carrier feedthrough
Sideband suppression
EVM
Error vector magnitude (rms)
TEST CONDITIONS
MIN
Output rms voltage over input I (or Q) rms voltage
TYP
MAX
UNIT
0.6
dB
13.5
dBm
fBB = 4.5, 5.5 MHz
25
dBm
fBB = 4.5, 5.5 MHz
65
dBm
Unadjusted
–35
dBm
Unadjusted
–36
dBc
WiMAX 5-MHz carrier, Pout = –8 dBm, LO = 6 dBm
–47
dB
WiMAX 5-MHz carrier, Pout = 0 dBm, LO = 6 dBm
–43
dB
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, fLO = 4000 MHz at 8 dBm, VinBB = 98
mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted)
RF Output Parameters
PARAMETER
G
Voltage gain
P1dB
Output compression point
IP3
Output IP3
IP2
Output IP2
Carrier feedthrough
Sideband suppression
TEST CONDITIONS
Output rms voltage over input I (or Q) rms voltage
MIN
TYP
MAX
UNIT
0.2
dB
12
dBm
fBB = 4.5, 5.5 MHz
22.5
dBm
fBB = 4.5, 5.5 MHz
60
dBm
Unadjusted
–36
dBm
Unadjusted
–36
dBc
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TYPICAL CHARACTERISTICS
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OUTPUT POWER
vs
BASEBAND VOLTAGE
OUTPUT POWER
vs
FREQUENCY AND TEMPERATURE
0
15
−2
POUT − Output Power − dBm
POUT − Output Power at 2.14 GHz − dBm
−1
10
5
0
−5
−10
−4
85°C
−5
25°C
−6
−7
−8
−15
VIN = 98 mVrms SE
LO = 8 dBm
VCC = 5 V
−9
−10
−20
0.01
0.1
0
1
VBB − Baseband Voltage Single-Ended RMS − V
f − Frequency − MHz
G002
G001
Figure 2.
OUTPUT POWER
vs
FREQUENCY AND SUPPLY VOLTAGE
OUTPUT POWER
vs
FREQUENCY AND LO POWER
0
0
−1
−1
5.5 V
POUT − Output Power − dBm
−3
−4
−5
4.5 V
−6
−7
–5 dBm
−3
−4
−5
8 dBm
−6
−7
−8
VIN = 98 mVrms SE
LO = 8 dBm
TA = 25°C
−9
0 dBm
−2
5V
−8
500 1000 1500 2000 2500 3000 3500 4000 4500
Figure 1.
−2
POUT − Output Power − dBm
–40°C
−3
VIN = 98 mVrms SE
VCC = 5 V
TA = 25°C
−9
−10
−10
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G003
Figure 3.
8
G004
Figure 4.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
P1dB
vs
FREQUENCY AND SUPPLY VOLTAGE
16
16
14
14
12
12
10
–40°C
25°C
P1dB − dBm
P1dB − dBm
P1dB
vs
FREQUENCY AND TEMPERATURE
85°C
8
6
4
5.5 V
10
5V
4.5 V
8
6
4
2
2
LO = 8 dBm
VCC = 5 V
0
LO = 8 dBm
TA = 25°C
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G005
G006
Figure 5.
Figure 6.
P1dB
vs
FREQUENCY AND LO POWER
OIP3
vs
FREQUENCY AND TEMPERATURE
40
16
35
14
–5 dBm
25°C
10
8 dBm
OIP3 − dBm
P1dB − dBm
–40°C
30
12
0 dBm
8
25
6
15
4
10
2
fBB = 4.5, 5.5 MHz
LO = 8 dBm
VCC = 5 V
5
VCC = 5 V
TA = 25°C
0
0
0
85°C
20
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G008
G007
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP3
vs
FREQUENCY AND SUPPLY VOLTAGE
OIP3
vs
FREQUENCY AND LO POWER
35
35
30
30
25
25
20
OIP3 − dBm
OIP3 − dBm
0 dBm
5V
5.5 V
4.5 V
15
10
20
–5 dBm
8 dBm
15
10
fBB = 4.5, 5.5 MHz
LO = 8 dBm
TA = 25°C
5
fBB = 4.5, 5.5 MHz
VCC = 5 V
TA = 25°C
5
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G009
G010
Figure 9.
Figure 10.
OIP2
vs
FREQUENCY AND TEMPERATURE
OIP2
vs
FREQUENCY AND SUPPLY VOLTAGE
100
100
90
90
5V
–40°C
80
80
4.5 V
70
70
60
60
OIP2 − dBm
OIP2 − dBm
85°C
50
25°C
40
30
50
5.5 V
40
30
20
20
fBB = 4.5, 5.5 MHz
LO = 8 dBm
VCC = 5 V
10
fBB = 4.5, 5.5 MHz
LO = 8 dBm
TA = 25°C
10
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G011
Figure 11.
10
G012
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP2
vs
FREQUENCY AND LO POWER
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
0
90
CS − Unadjusted Carrier Feedthrough − dBm
100
8 dBm
80
OIP2 − dBm
70
60
50
0 dBm
40
–5 dBm
30
20
fBB = 4.5, 5.5 MHz
VCC = 5 V
TA = 25°C
10
LO = 8 dBm
VCC = 5 V
−10
−20
–40°C
−30
85°C
−40
−50
25°C
−60
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G014
G013
Figure 13.
Figure 14.
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND SUPPLY VOLTAGE
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND LO POWER
0
LO = 8 dBm
TA = 25°C
CS − Unadjusted Carrier Feedthrough − dBm
CS − Unadjusted Carrier Feedthrough − dBm
0
−10
−20
−30
5.5 V
−40
−50
4.5 V
5V
VCC = 5 V
TA = 25°C
−10
−20
–5 dBm
−30
−40
−50
0 dBm
8 dBm
−60
−60
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G016
G015
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND SUPPLY VOLTAGE
0
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
−10
SS − Unadjusted Sideband Suppression − dBc
SS − Unadjusted Sideband Suppression − dBc
0
−20
–40°C
−30
85°C
−40
−50
25°C
−60
−70
−80
LO = 8 dBm
POUT = −3 dBm
TA = 25°C
−10
−20
−30
5.5 V
−40
4.5 V
−50
5V
−60
−70
−80
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − MHz
G017
G018
Figure 17.
Figure 18.
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND LO POWER
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
−150
VCC = 5 V
POUT = −3 dBm
TA = 25°C
−10
−152
Noise at 13-MHz Offset − dBm/Hz
SS − Unadjusted Sideband Suppression − dBc
0
−20
8 dBm
–5 dBm
−30
−40
−50
−60
0 dBm
−70
−154
VCC = 5 V
LO = 8 dBm
POUT = −5 dBm
85°C
−156
25°C
−158
−160
−162
−164
–40°C
−166
−168
−80
0
500 1000 1500 2000 2500 3000 3500 4000 4500
−170
0.8
1.2
f − Frequency − MHz
G019
Figure 19.
12
1.6
2.0
2.4
2.8
3.2
3.6
4.0
f − Frequency − GHz
G020
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND SUPPLY VOLTAGE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
OUTPUT POWER
−150
−150
−154
−156
5.5 V
−158
−160
−162
5V
−164
4.5 V
−166
−154
−156
−158
1960 MHz
−160
−162
−164
2140 MHz
−166
−168
−168
−170
0.8
LO = 8 dBm
VCC = 5 V
TA = 25°C
−152
Noise at 13-MHz Offset − dBm/Hz
Noise at 13-MHz Offset − dBm/Hz
−152
LO = 8 dBm
POUT = −5 dBm
TA = 25°C
1.2
1.6
2.0
2.4
2.8
3.2
3.6
−170
−10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0
4.0
G021
Figure 22.
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
Adj at 942.6 MHz
LO = 8 dBm
VCC = 5 V
−30
−40
–40°C
85°C
−50
−60
−70
−80
25°C
−90
−100
900
3
4
5
G022
0
CS − Adjusted Carrier Feedthrough − dBm
CS − Adjusted Carrier Feedthrough − dBm
−20
2
Figure 21.
0
−10
1
POUT − Output Power − dBm
f − Frequency − GHz
920
940
960
980
1000
−10
−20
Adj at 1960 MHz
LO = 8 dBm
VCC = 5 V
−30
−40
–40°C
85°C
−50
−60
−70
−80
25°C
−90
−100
1910
f − Frequency − MHz
1930
1950
1970
1990
2010
f − Frequency − MHz
G023
Figure 23.
G024
Figure 24.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
0
−10
−20
Adj at 2140 MHz
LO = 8 dBm
VCC = 5 V
CS − Adjusted Carrier Feedthrough − dBm
CS − Adjusted Carrier Feedthrough − dBm
0
–40°C
−30
85°C
−40
−50
−60
−70
25°C
−80
−90
−100
2090
2110
2130
2150
2170
−20
Adj at 2500 MHz
LO = 8 dBm
VCC = 5 V
−30
85°C
−10
−40
−50
−60
−70
25°C
−80
−90
−100
2400
2190
–40°C
2440
2480
2520
2560
f − Frequency − MHz
G026
G025
Figure 25.
Figure 26.
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−20
0
Adj at 3500 MHz
LO = 8 dBm
VCC = 5 V
SS − Adjusted Sideband Suppression − dBc
CS − Adjusted Carrier Feedthrough − dBm
0
−10
–40°C
−30
85°C
−40
−50
−60
−70
25°C
−80
−90
−100
3400
3440
3480
3520
3560
3600
−10
−20
Adj at 942.6 MHz
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
−30
−40
85°C
–40°C
−50
−60
25°C
−70
−80
900
f − Frequency − MHz
920
940
960
980
1000
f − Frequency − MHz
G027
Figure 27.
14
2600
f − Frequency − MHz
G028
Figure 28.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−10
−20
0
Adj at 1960 MHz
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
SS − Adjusted Sideband Suppression − dBc
SS − Adjusted Sideband Suppression − dBc
0
−30
85°C
−40
−50
−60
–40°C
25°C
−70
−80
1860
1900
1940
1980
2020
−10
−20
Adj at 2140 MHz
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
−30
−50
−60
25°C
−70
−80
2040
2060
2080
f − Frequency − MHz
2200
Figure 29.
Figure 30.
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
2240
0
Adj at 2500 MHz
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
SS − Adjusted Sideband Suppression − dBc
SS − Adjusted Sideband Suppression − dBc
2160
G030
0
−20
2120
f − Frequency − MHz
G029
−10
85°C
–40°C
−40
−30
−40
85°C
–40°C
−50
−60
−70
−80
2400
25°C
2440
2480
2520
2560
2600
−10
−20
Adj at 3500 MHz
LO = 8 dBm
POUT = −3 dBm
VCC = 5 V
−30
–40°C
−40
85°C
−50
−60
−70
−80
3400
f − Frequency − MHz
25°C
3440
3480
3520
3560
3600
f − Frequency − MHz
G031
Figure 31.
G032
Figure 32.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP3
vs
COMMON-MODE VOLTAGE
OIP2
vs
COMMON-MODE VOLTAGE
90
35
2141 MHz
80
30
70
2141 MHz
25
OIP2 − dBm
OIP3 − dBm
60
20
1960 MHz
15
50
1960 MHz
40
30
10
20
LO = 8 dBm
VCC = 5 V
TA = 25°C
5
0
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0
1.2
1.9
1.5
1.6
1.7
1.8
Figure 34.
ADJACENT CHANNEL POWER RATIO
vs
OUTPUT POWER
ADJACENT CHANNEL POWER RATIO
vs
OUTPUT POWER
1.9
G034
G033
−60
−63
−66
ACPR − Adjacent Channel Power Ratio − dBc
Notes: 1. Using TTE’s LE7640T-2.2M-50-720A
LPF on Baseband inputs
2. Using TI’s DAC5687 as a source
generator
−69
ADJ
−72
−75
−78
−81
−84
ALT
Single Carrier, 1960 MHz
−90
−20
−18
−16
−14
−12
−10
−8
POUT − Output Power − dBm
−6
−4
Notes: 1. Using TTE’s LE7640T-2.2M-50-720A
LPF on Baseband inputs
2. Using TI’s DAC5687 as a source
generator
−63
−66
−69
−72
ADJ
−75
−78
−81
−84
−87
ALT
Single Carrier, 2140 MHz
−90
−20
−18
−16
−14
−12
−10
−8
POUT − Output Power − dBm
G041
Figure 35.
16
1.4
Figure 33.
−60
ACPR − Adjacent Channel Power Ratio − dBc
1.3
VCM − Common-Mode Voltage − V
VCM − Common-Mode Voltage − V
−87
LO = 8 dBm
VCC = 5 V
TA = 25°C
10
−6
−4
G042
Figure 36.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP3 at 1960 MHz DISTRIBUTION
OIP2 at 1960 MHz DISTRIBUTION
25
60
50
20
Distribution − %
Distribution − %
40
30
15
10
20
5
10
0
0
24
25
26
27
28
56
29
58
60
62
64
66
68
70
72
OIP2 − dBm
OIP3 − dBm
G037
G036
Figure 37.
Figure 38.
UNADJUSTED CARRIER FEEDTHROUGH
at 1960 MHz DISTRIBUTION
UNADJUSTED SIDEBAND SUPPRESSION
at 1960 MHz DISTRIBUTION
30
18
16
25
14
20
Distribution − %
Distribution − %
12
10
8
15
10
6
4
5
2
0
0
−36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76
−24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64
SS − Unadjusted Sideband Suppression − dBc
CS − Unadjusted Carrier Feedthrough − dBm
G039
G038
Figure 39.
Figure 40.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 8 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
P1dB at 1800 MHz DISTRIBUTION
35
30
Distribution − %
25
20
15
10
5
0
11.4
11.6
11.8
12
12.2
12.4
P1dB − dBm
G040
Figure 41.
APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
•
•
•
•
•
•
•
See Figure 42 for proper connection of the TRF3703 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper common-mode voltage of 1.7V.
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This
pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.
ESD Sensitivity
RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices
should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated
level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board
(PCB). Follow these guidelines for optimal ESD protection:
• Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,
customers’ ESD precautions should be consistent with these ratings.
• The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly
connect the device pins to off-board circuits.
18
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DNI C10
DNI C11
.1uF
.1uF
J3
BBIN
2
3
4
5
1
R2
R3
0
0
SMA_END
5
4
3
2
1
SMA_END
J4
BBIP
W1
2POS JUMPER
2
1
W2
2POS JUMPER
1
2
+ C6
4.7uF
C5
C4
1000pF
1000pF
+ C7
4.7uF
C15
C14
25
24
23
22
21
20
19
100pF
VCC1
GND7
RF_OUT
U1
NC5
TRF3703
GND6
NC4
J7
RF_OUT
18
17
16
15
14
13
R1
C2
C3
C8
C9
1uF
DNI
1uF
DNI
100pF
SMA_END
1
100pF
2
3
4
5
1
0
7
8
9
10
11
12
J2
LON
SMA_END
NC1
GND1
LOP
LON
GND2
NC2
NC3
GND3
BBQN
BBQP
GND4
GND5
1
2
3
4
5
6
5
4
3
2
2
3
4
5
C1
GND
VCC2
GND10
BBIN
BBIP
GND9
GND8
1
SMA_END
5pF
DNI
5pF
DNI
J1
LOP
R5
0
0
1
2
3
4
5
SMA_END
J6
QP
1
DNI
DNI
C12
C13
.1uF
.1uF
SMA_END
5
4
3
2
J5
QN
R4
S0214-02
NOTE: DNI = Do not install.
Figure 42. TRF3703 EVM Schematic
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Figure 43 shows the top view of the TRF3703 EVM board.
K001
Figure 43. TRF3703 EVM Board Layout
20
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Table 1. Bill of Materials for TRF3703 EVM
Item
Number
Part
Reference
Quantity
Value
PCB Footprint
Mfr Name
Mfr Part Number
Note
1
3
C1, C2, C3
100 pF
0402
Panasonic
ECJ-0EC1H101J
2
2
C4, C5
1000 pF
0402
Panasonic
ECJ-0VC1H102J
3
2
C6, C7
4.7 mF
TANT_A
KEMET
T491A475K016AS
4
0
C8, C9
1 mF
0402
Panasonic
ECJ-0EC1H010C_DNI
DNI (1)
5
0
C10, C11,
C12, C13
0.1 mF
0402
Panasonic
ECJ-0EB1A104K_DNI
DNI (1)
6
0
C14, C15
5 pF
0402
Panasonic
ECJ-0EC1H050C_DNI
DNI (1)
7
7
J1, J2, J3,
J4, J5, J6,
J7
LOP
SMA_SMEL_250x215
Johnson
Components
142-0711-821
8
1
R1
0
0402
Panasonic
ERJ-2GE0R00X
9
4
R2, R3, R4,
R5
0
0402
Panasonic
ERJ-2GE0R00
10
1
U1
TRF3703
QFN_24_163x163_0p50m
m
TI
TRF370317
11
2
W1, W2
Jumper_1x2_t
hvt
HDR_THVT_1x2_100
Samtec
HTSW-150-07-L-S
(1)
DNI = Do not install.
GSM Applications
The TRF370317 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise
level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal
for the stringent GSM/EDGE applications.
WCDMA Applications
The TRF370317 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR)
and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance
digital-to-analog converters as depicted in Figure 44, excellent ACPR levels were measured with one-, two-, and
four-WCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPR
values.
16
TRF3703
I/Q
Modulator
DAC5687
RF_OUT
16
CLK1
CLK2
VCXO
TRF3761
PLL
LO Generator
CDCM7005
Clock Gen
Ref Osc
B0176-01
Figure 44. Typical Transmit Setup Block Diagram
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DAC-to-Modulator Interface Network
For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the
modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is
used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive
circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the
insertion loss as low as possible to achieve the best dynamic range. Figure 45 shows the passive interconnect
circuit for two different topologies. One topology is used when the DAC (e.g., DAC568x) common mode is larger
than the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage to reduce the
insertion loss of the network. The second topology is used when the DAC (e.g., DAC56x2) common mode is
smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q
branches.
Vdd
It
DAC568x
R1
R2
TRF370x
1.7V
3.3V
R3
Id
Vee
Topology 1: DAC Vcm > TRF370x Vcm
Vdd
It
DAC56x2
0.7V
R1
TRF370x
R2
1.7V
R3
Id
Topology 2: DAC Vcm < TRF370x Vcm
S0338-01
Figure 45. Passive DAC-to-Modulator Interface Network
Table 2. DAC-to-Modulator Interface Network Values
Topology 1
Topology 2
With Vee = 0 V
With Vee = –5 V
DAC Vcm [V]
3.3
3.3
0.7
TRF370x Vcm [V]
1.7
1.7
1.7
Vdd [V]
5
5
5
Vee [V]
Gnd
–5
N/A
R1 [Ω]
66
56
960
R2 [Ω]
100
80
290
R3 [Ω]
108
336
52
Insertion loss [dB]
5.8
1.9
2.3
22
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DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is suppressed in the output
spectrum of the modulator. If the common mode voltage at each of the baseband inputs is exactly the same and
there was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DC
offset imbalances in the device allow some of the LO component to feed through to the output. Because this
phenomenon is independent of the RF output power and the injected LO input power, the parameter is
expressed in absolute power, dBm.
Some improvement to the unadjusted carrier suppression in a localized band is possible by introducing a simple
RF filter in the baseband I/Q paths. The filter topology is a series resistor followed by a shunt capacitor. For
example, using a series 50-Ω resistor (R2, R3, R4, R5 = 50 Ω) followed by a shunt 4.7-pF capacitor (C10, C11,
C12, C13 = 4.7 pF) yields unadjusted carrier suppression improvement around the 2-GHz band. Figure 46 shows
the performance improvement for that filter configuration.
−20
Carrier Suppression − dBm
−25
−30
Without BB RC Filter
−35
−40
With BB RC Filter
−45
−50
1700
1900
2100
2300
2500
2700
f − Frequency − MHz
G035
Figure 46. Carrier Suppression Improvement With RC Filter
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted
around their theoretical value of VCM to yield the maximum suppression of the LO component in the output
spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is suppressed in the
output of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch of
the modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed.
Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. This
parameter is measured in dBc relative to the desired sideband.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs are
iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is
measured in dBc.
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Suppressions Over Temperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Si
M
D
es
i
re
d
rd
er
I
M
rd
U
nw
an
te
d
Si
de
ba
nd
2
3
O
rd
er
I
O
nd
gn
al
Figure 47 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet.
+
B2
(f B
B2
(f B
LO
rd rd rd
nd nd rd
f2ndH/L 2
= 2BBnOrder Intermodulation Product (High Side/Low Side)BBn
LOBBn = Local Oscillator FrequencyBBn
rd
)+
rd
f3rdH/L 3= 3BBnOrder Intermodulation Product Frequency (High Side/Low Side)BBn
rd
1
f BB
rd
=
dH
L
=
rd
fnBBn = RF FrequencyBBn
f 2n
f1
–
2
2f
= LO
+
H
f 3rd 2 O
f
BB L
+
=
f2 f BB1 – f2
LO
= 1
f
)+
f1 = 2
1
f BB
–
f 3rd
dL
f 2n
LO
1
f BB
–
2
LO f BB
= –
B1 LO
LS 2 =
B
LS
rd
fBBnBBn= Baseband FrequencyBBn
f
rd
rd
rd
= Lower Sideband FrequencyBBn
LSBnBBn
rd
M0104-01
Figure 47. Graphical Illustration of Common Terms
24
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Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): TRF370317
TRF370317
www.ti.com
SLWS209B – MARCH 2008 – REVISED JANUARY 2010
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (June, 2008) to Revision B
Page
•
Added electrostatic discharge parameters to Absolute Maximum Ratings table ................................................................. 3
•
Added ESD Sensitivity section ........................................................................................................................................... 18
Changes from Original (March 2008) to Revision A
Page
•
Added ACPR graph to Typical Characteristics based on customers' requests .................................................................. 16
•
Added ACPR graph to Typical Characteristics based on customers' requests .................................................................. 16
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Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Link(s): TRF370317
25
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TRF370317IRGER
ACTIVE
VQFN
RGE
24
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0317
TRF370317IRGET
ACTIVE
VQFN
RGE
24
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF37
0317
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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