Product
Folder
Order
Now
Support &
Community
Tools &
Software
Technical
Documents
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
TS3USB221E High-Speed USB 2.0 (480-Mbps) 1:2 Multiplexer – Demultiplexer Switch
With Single Enable and IEC Level 3 ESD Protection
1 Features
3 Description
•
•
•
•
•
•
•
•
•
The TS3USB221E is a high-bandwidth switch
specially designed for the switching of high-speed
USB 2.0 signals in handset and consumer
applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited
USB I/Os. The wide bandwidth (1 GHz) of this switch
allows signals to pass with minimum edge and phase
distortion. The device multiplexes differential outputs
from a USB host device to one of two corresponding
outputs. The switch is bidirectional and offers little or
no attenuation of the high-speed signals at the
outputs. The TS3USB221E is designed for low bit-tobit skew and high channel-to-channel noise isolation,
and is compatible with various standards, such as
high-speed USB 2.0 (480 Mbps).
1
•
•
VCC operation of 2.3 V to 3.6 V
Switch I/Os accept signals up to 5.5 V
1.8-V compatible control-pin inputs
Low-power mode when OE Is disabled (1 μA)
rON = 6 Ω maximum
ΔrON = 0.2 Ω typical
Cio(on) = 7 pF maximum
Low power consumption (30 μA maximum)
ESD performance tested per JESD 22
– 7000-V human body model
(A114-B, Class II)
– 1000-V charged-device model (C101)
ESD performance I/O port to GND
– 12-kV human body model (A114-B, Class II)
– ±7-kV contact discharge (IEC 61000-4-2)
High bandwidth (1 GHz typical)
The TS3USB221E integrates ESD protection cells on
all pins, is available in a SON package (3 mm ×
3 mm) as well as in a tiny μQFN package (2 mm ×
1.5 mm) and is characterized over the free-air
temperature range from –40°C to 85°C.
Device Information(1)
2 Applications
•
•
•
•
•
•
PART NUMBER
Routes signals for USB 1.0, 1.1, and 2.0
Mobile phones
Digital cameras
Notebooks
USB I/O expansion
MHL 1.0
Block Diagram
TS3USB221E
PACKAGE
BODY SIZE (NOM)
VSON (10)
3.00 mm × 3.00 mm
UQFN (10)
1.50 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic, Each FET Switch (SW)
D+
1D+
D−
1D−
A
2D+
B
VCC
2D−
Digital Control
Charge
Pump
S
OE
EN (see Note A)
A.
EN is the internal enable signal applied to
the switch.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
5
5
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics ..........................................
Dynamic Electrical Characteristics, VCC = 3.3 V
±10% .........................................................................
6.7 Dynamic Electrical Characteristics, VCC = 2.5 V
±10% .........................................................................
6.8 Switching Characteristics, VCC = 3.3 V ±10%...........
6.9 Switching Characteristics, VCC = 2.5 V ±10% ..........
6.10 Typical Characteristics ............................................
7
8
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
12
12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 16
12 Device and Documentation Support ................. 17
6
6
6
6
7
Parameter Measurement Information .................. 8
Detailed Description ............................................ 12
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (April 2015) to Revision D
•
Page
Changed VCC Operation FROM 2.5 V to 3.3 V TO 2.3 V to 3.6 V ......................................................................................... 1
Changes from Revision B (July 2012) to Revision C
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Thermal Information table, Feature Description
section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................ 1
•
Removed Ordering Information table ..................................................................................................................................... 1
Changes from Revision A (February 2010) to Revision B
•
2
Page
Updated TOP-SIDE MARKING for RSE package in Ordering Information table ................................................................... 1
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
5 Pin Configuration and Functions
DRC Package
10-Pin VSON
(Top View)
RSE Package
10-Pin UQFN
(Top View)
1D+
1
10
VCC
1D–
2
9
S
2D+
3
8
D+
2D–
4
7
D–
GND
5
6
OE
VCC
10
9
S
2
8
D+
2D+
3
7
D–
2D–
4
6
OE
1D+
1
1D–
5
GND
RSE Package
10-Pin UQFN
(Bottom View)
VCC
S
9
D+
10
1
1D+
8
2
1D–
D–
7
3
2D+
OE
6
4
2D–
5
GND
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
1D+
1
I/O
1D–
2
I/O
USB port 1
2D+
3
I/O
2D–
4
I/O
GND
5
—
OE
6
I
Bus-switch enable
D–
7
I/O
Common USB port
D+
8
I/O
S
9
I
VCC
10
—
USB port 2
Ground
Select input
Supply voltage
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
3
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
–0.5
4.6
V
VIN
Control input voltage
(2) (3)
–0.5
7
V
VI/O
Switch I/O voltage (2) (3) (4)
–0.5
7
V
IIK
Control input clamp current
VIN < 0
–50
mA
II/OK
I/O port clamp current
VI/O < 0
–50
mA
II/O
ON-state switch current (5)
±120
mA
Continuous current through VCC or GND
±100
mA
VCC
Supply voltage
θJA
Package thermal impedance (6)
Tstg
Storage temperature
(1)
(2)
(3)
(4)
(5)
(6)
DRC package
48.7
RSE package
243
–65
°C/W
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
VI and VO are used to denote specific conditions for VI/O.
II and IO are used to denote specific conditions for II/O.
The package thermal impedance is calculated in accordance with JESD 51-7.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
(1)
(2)
Electrostatic discharge
All pins except GND, OE,
S and VCC
±12000
Pins GND, OE, S and
VCC
±7000
All pins except GND, OE,
Charged-device model (CDM), per JEDEC S and VCC
specification JESD22-C101 (2)
Pins GND, OE, S and
VCC
UNIT
V
±7000
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
See
VCC
(1)
.
Supply voltage
VIH
High-level control input voltage
VIL
Low-level control input voltage
VI/O
Data input/output voltage
TA
Operating free-air temperature
(1)
4
MIN
MAX
2.3
3.6
VCC = 2.3 V to 2.7 V
0.46 × VCC
VCC = 2.7 V to 3.6 V
0.46 × VCC
UNIT
V
V
VCC = 2.3 V to 2.7 V
0.25 × VCC
VCC = 2.7 V to 3.6 V
0.25 × VCC
V
0
5.5
V
–40
85
°C
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
6.4 Thermal Information
TS3USB221E
THERMAL METRIC (1)
DRC (VSON)
RSE (UQFN)
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
57.7
169.8
RθJC(top)
Junction-to-case (top) thermal resistance
87.7
84.7
RθJB
Junction-to-board thermal resistance
32.6
94.9
ψJT
Junction-to-top characterization parameter
8.2
5.7
ψJB
Junction-to-board characterization parameter
32.8
94.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance
18.5
N/A
(1)
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted) (1)
PARAMETER
VIK
Control
inputs
IIN
IOZ (3)
IOFF
TEST CONDITIONS
UNIT
–1.8
V
VIN = 0 V to 3.6 V
±1
μA
VIN = VCC or GND,
Switch OFF
±1
μA
VI/O = 0 V to 5.25 V
±2
VI/O = 0 V to 3.6 V
±2
VI/O = 0 V to 2.7 V
±1
II = –18 mA
VCC = 3.6 V, 2.7 V, 0 V,
VCC = 3.6 V, 2.7 V,
VO = 0 V to 5.25 V, VI = 0 V,
VCC = 0 V
TYP (2)
MAX
VCC = 3.6 V, 2.7 V,
MIN
μA
ICC
VCC = 3.6 V, 2.7 V,
VIN = VCC or GND,
II/O = 0 V,
Switch ON or OFF
30
μA
ICC
(low
power
mode)
VCC = 3.6 V, 2.7 V,
VIN = VCC or GND
Switch disabled
(OE in high state)
1
μA
ICC (4)
Control
inputs
One input at 1.8 V,
Other inputs at VCC or GND
VCC = 3.6 V
20
VCC = 2.7 V
0.5
Cin
Control
inputs
VCC = 3.3 V, 2.5 V,
VIN = 3.3 V or 0 V
VCC = 3.3 V, 2.5 V,
VI/O = 3.3 V or 0 V,
Switch OFF
VCC = 3.3 V, 2.5 V,
VI/O = 3.3 V or 0 V,
VI = 0 V,
VI = 2.4 V,
Cio(OFF
)
Cio(ON)
rON (5)
VCC = 3 V, 2.3 V
ΔrON
VCC = 3 V, 2.3 V
rON(flat)
VCC = 3 V, 2.3 V
(1)
(2)
(3)
(4)
(5)
μA
1.5
2.5
pF
3.5
5
pF
Switch ON
6
7.5
pF
IO = 30 mA
3
6
IO = –15 mA
3.4
6
VI = 0 V,
IO = 30 mA
0.2
VI = 1.7,
IO = –15 mA
0.2
VI = 0 V,
IO = 30 mA
1
VI = 1.7,
IO = –15 mA
1
Ω
Ω
Ω
VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25C.
For I/O ports, the parameter IOZ includes the input leakage current.
This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
5
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
6.6 Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
over operating range, TA = –40°C to 85°C, VCC = 3.3 V ±10%, GND = 0 V
PARAMETER
TYP (1)
TEST CONDITIONS
XTALK
Crosstalk
RL = 50 , f = 250 MHz
–40
OIRR
OFF isolation
RL = 50 , f = 250 MHz
–40
BW
Bandwidth (–3 dB)
RL = 50
(1)
UNIT
dB
dB
1
GHz
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
6.7 Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
over operating range, TA = –40°C to 85°C, VCC = 2.5 V ±10%, GND = 0 V
PARAMETER
TYP (1)
TEST CONDITIONS
XTALK
Crosstalk
RL = 50 , f = 250 MHz
-39
OIRR
OFF isolation
RL = 50 , f = 250 MHz
-40
BW
Bandwidth (3 dB)
RL = 50
(1)
1
UNIT
dB
dB
GHz
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
6.8 Switching Characteristics, VCC = 3.3 V ±10%
over operating range, TA = –40°C to 85°C, VCC = 3.3 V ±10%, GND = 0 V
PARAMETER
tpd
Propagation delay
MIN
(2) (3)
Line enable time
tOFF
Line disable time
tSK(O)
Output skew between center port to any other port (2)
(1)
(2)
(3)
MAX
0.25
tON
tSK(P)
TYP (1)
ns
S to D, nD
30
OE to D, nD
17
S to D, nD
12
OE to D, nD
10
Skew between opposite transitions of the same output (tPHL– tPLH)
(2)
UNIT
ns
ns
0.1
0.2
ns
0.1
0.2
ns
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
Specified by design
The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Because this time constant is much smaller than the
rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when
used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven
side.
6.9 Switching Characteristics, VCC = 2.5 V ±10%
over operating range, TA = –40°C to 85°C, VCC = 2.5 V ±10%, GND = 0 V
PARAMETER
tpd
Propagation delay
MIN
(2) (3)
50
OE to D, nD
32
S to D, nD
23
OE to D, nD
12
tOFF
Line disable time
tSK(O)
Output skew between center port to any other port (2)
6
Skew between opposite transitions of the same output (tPHL– tPLH)
(2)
UNIT
ns
S to D, nD
Line enable time
(1)
(2)
(3)
MAX
0.25
tON
tSK(P)
TYP (1)
ns
ns
0.1
0.2
ns
0.1
0.2
ns
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
Specified by design
The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. Because this time constant is much smaller than the
rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch, when
used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven
side.
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
6.10 Typical Characteristics
0
–20
–1
–30
–40
Attenuation (dB)
Gain (dB)
–2
–3
–4
–5
–50
–60
–70
–80
–6
–90
–7
–100
1E+6
1E+7
1E+8
1E+9
1E+6
1E+10
1E+7
1E+8
1E+9
1E+10
Frequency (Hz)
Frequency (Hz)
Figure 2. OFF Isolation vs Frequency
Figure 1. Gain vs Frequency
3.5
-25
3.4
-35
3.3
-55
ron (Ω)
Attenuation (dB)
-45
-65
3.2
3.1
-75
3.0
-85
2.9
-95
-105
1E+6
VCC = 3.0 V
VCC = 2.3 V
2.8
1E+7
1E+8
1E+9
0.0
1E+10
0.5
1.0
Frequency
1.5
2.0
2.5
3.0
3.5
VIN (V)
Figure 3. Crosstalk vs Frequency
Figure 4. Ron vs VIN (IOUT = –15 mA)
3.5
3.4
ron (Ω)
3.3
3.2
3.1
3.0
2.9
VCC = 3.0 V
VCC = 2.3 V
2.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VIN (V)
Figure 5. Ron vs VIN (IOUT = –30 mA)
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
7
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
7 Parameter Measurement Information
VCC
VOUT1 or VOUT2
1D or 2D
TEST
RL
CL
VCOM
tON
500 Ω
50 pF
V+
tOFF
500 Ω
50 pF
V+
D
VIN
CL(2)
1D or 2D
RL
S
VCTRL
CL(2)
Logic
Input(1)
1.8 V
Logic
Input
(VI)
RL
GND
50%
50%
0
tON
Switch
Output
(VOUT1 or VOUT2)
(1)
(2)
tOFF
90%
90%
VOH
VOL
All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, ZO = 50W, t r < 5 ns, t f < 5 ns.
CL includes probe and jig capacitance.
Figure 6. Turnon (TON) and Turnoff Time (TOFF)
VCC
Network Analyzer
Channel OFF: 1D to D
50 Ω
VOUT1 1D
VCTRL = VCC or GND
VIN
D
Source
Signal
50 Ω
2D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
VCTRL S
50 Ω
+
GND
DC Bias = 350 mV
Figure 7. OFF Isolation (OISO)
VCC
Network Analyzer
Channel ON: 1D to D
50 Ω
VOUT1 1D
Channel OFF: 2D to D
VIN
Source
Signal
VCTRL = VCC or GND
VOUT2 2D
50
VCTRL S
50 Ω
+
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 8. Crosstalk (XTALK)
8
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
Parameter Measurement Information (continued)
VCC
Network Analyzer
50 Ω
VOUT1
1D
Channel ON: 1D to D
D
Source
Signal
VIN
VCTRL = VCC or GND
2D
Network Analyzer Setup
50 Ω
VCTRL
+
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
S
GND
DC Bias = 350 mV
Figure 9. Bandwidth (BW)
400 mV
Figure 10. Propagation Delay
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
9
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
Parameter Measurement Information (continued)
800 mV
50%
50%
Input
400 mV
tPLH
tPHL
VOH
50%
Output
VOL
tSK(P) = | tPHL – tPLH |
PULSE SKEW tSK(P)
800 mV
50%
50%
Input
400 mV
tPLH1
tPHL1
VOH
50%
50%
Output 1
VOL
tSK(O)
tSK(O)
VOH
50%
50%
Output 2
tPLH2
VOL
tPHL2
tSK(O) = | tPLH1 – tPLH2 | or | tPHL1 – tPHL2 |
OUTPUT SKEW tSK(P)
Figure 11. Skew Test
VCC
VOUT1 1D
D
+
VIN
Channel ON
VOUT2 2D
r on –
VCTRL
IIN
S
VIN
VOUT2 or VOUT1
Ω
IIN
VCTRL = VIH or VIL
+
GND
Figure 12. ON-State Resistance (Ron)
10
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
Parameter Measurement Information (continued)
VCC
VOUT1 1D
D
+
VOUT2 2D
VCTRL
VIN
+
S
OFF-State Leakage Current
Channel OFF
VCTRL = VIH or VIL
+
GND
Figure 13. OFF-State Leakage Current
VCC
VOUT1 1D
Capacitance
Meter
VBIAS
VBIAS = VCC or GND
VOUT2 2D
VCTRL = VCC or GND
VIN D
Capacitance is measured at 1D,
2D, D, and S inputs during ON
and OFF conditions.
VCTRL S
GND
Figure 14. Capacitance
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
11
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
8 Detailed Description
8.1 Overview
The TS3USB221E device is a 2-channel SPDT switch specially designed for the switching of high-speed USB
2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with
hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signals to pass with
minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of
two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals
at the outputs. The device also has a low power mode that reduces the power consumption to 1 μA for portable
applications with a battery or limited power budget.
The device is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with
various standards, such as high-speed USB 2.0 (480 Mbps).
The TS3USB221E device integrates ESD protection cells on all pins, is available in a tiny μQFN package (2 mm
× 1.5 mm) and is characterized over the free-air temperature range from –40°C to 85°C.
8.2 Functional Block Diagram
D+
1D+
D−
1D−
2D+
2D−
Digital Control
S
OE
8.3 Feature Description
8.3.1 Low Power Mode
The TS3USB221E has a low power mode that reduces the power consumption to 1 μA when the device is not in
use. To put the device in low power mode and disable the switch, the bus-switch enable pin OE must be
supplied with a logic high signal.
8.4 Device Functional Modes
Table 1. Truth Table
12
S
OE
FUNCTION
X
H
Disconnect
L
L
D = 1D
H
L
D = 2D
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
There are many USB applications in which the USB hubs or controllers have a limited number of USB I/Os. The
TS3USB221E solution can effectively expand the limited USB I/Os by switching between multiple USB buses in
order to interface them to a single USB hub or controller. TS3USB221E can also be used to connect a single
controller to two USB connectors.
9.2 Typical Application
3.3 V
0.1 μF
0.1 μF
VCC
System
Controller
Switch
Control Logic
USB
Controller
TS3USB221E
2-channel
SPDT
S
OE
1D+
1DD+
USB Port 1
D2D+
2D-
USB Port 2
GND
Figure 15. Simplified Schematic
9.2.1 Design Requirements
Design requirements of the USB 1.0, 1.1, and 2.0 standards should be followed.
TI recommends that the digital control pins S and OE be pulled up to VCC or down to GND to avoid undesired
switch positions that could result from the floating pin.
9.2.2 Detailed Design Procedure
The TS3USB221E can be properly operated without any external components. However, it is recommended that
unused pins should be connected to ground through a 50-Ω resistor to prevent signal reflections back into the
device.
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
13
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
Typical Application (continued)
0.5
0.5
0.4
0.4
0.3
0.3
Differential Signal (V)
Differential Signal (V)
9.2.3 Application Curves
0.2
0.1
0.0
–0.1
–0.2
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.3
–0.4
–0.4
–0.5
–0.5
0.0
0.2
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.2
–9
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
–9
Time (X 10 ) (s)
Time (X 10 ) (s)
Figure 16. Eye Pattern: 480-Mbps USB Signal With No
Switch (Through Path)
Figure 17. Eye Pattern: 480-Mbps USB Signal With Switch
1D Path
0.5
0.4
Differential Signal (V)
0.3
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.4
–0.5
0.0
0.2
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
–9
Time (X 10 ) (s)
Figure 18. Eye Pattern: 480-Mbps USB Signal With Switch 2D Path
14
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
10 Power Supply Recommendations
Power to the device is supplied through the VCC pin and should follow the USB 1.0, 1.1, and 2.0 standards. TI
recommends placing a bypass capacitor as close as possible to the supply pin VCC to help smooth out lower
frequency noise to provide better load regulation across the frequency spectrum.
11 Layout
11.1 Layout Guidelines
Place supply bypass capacitors as close to VCC pin as possible and avoid placing the bypass caps near the
D+/D– traces.
The high speed D+/D– traces should always be matched lengths and must be no more than 4 inches; otherwise,
the eye diagram performance may be degraded. A high-speed USB connection is made through a shielded,
twisted pair cable with a differential characteristic impedance. In layout, the impedance of D+ and D– traces
should match the cable characteristic differential impedance for optimal performance.
Route the high-speed USB signals using a minimum of vias and corners which will reduce signal reflections and
impedance changes. When a via must be used, increase the clearance size around it to minimize its
capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of
picking up interference from the other layers of the board. Be careful when designing test points on twisted pair
lines; through-hole pins are not recommended.
When it becomes necessary to turn 90°, use two 45° turns or an arc instead of making a single 90° turn. This
reduces reflections on the signal traces by minimizing impedance discontinuities.
Do not route USB traces under or near crystals, oscillators, clock signal generators, switching regulators,
mounting holes, magnetic devices or IC’s that use or duplicate clock signals.
Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is unavoidable, then
the stub should be less than 200 mm.
Route all high-speed USB signal traces over continuous planes (VCC or GND), with no interruptions.
Avoid crossing over anti-etch, commonly found with plane splits.
Due to high frequencies associated with the USB, a printed circuit board with at least four layers is
recommended; two signal layers separated by a ground and power layer as shown in Figure 19.
Signal 1
GND Plane
Power Plane
Signal 2
Figure 19. Four-Layer Board Stack-Up
The majority of signal traces should run on a single layer, preferably Signal 1. Immediately next to this layer
should be the GND plane, which is solid with no cuts. Avoid running signal traces across a split in the ground or
power plane. When running across split planes is unavoidable, sufficient decoupling must be used. Minimizing
the number of signal vias reduces EMI by reducing inductance at high frequencies. For more information on
layout guidelines, see High Speed Layout Guidelines (SCAA082) and USB 2.0 Board Design and Layout
Guidelines (SPRAAR7).
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
15
TS3USB221E
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
www.ti.com
11.2 Layout Example
LEGEND
VIA to Power Plane
Polygonal Copper Pour
VIA to GND Plane
Bypass Capacitor
V+
To Microcontroller
10
1 1D+
VCC
S
9
2 1D-
D+
8
3 2D+
D-
7
USB Port 1
To USB Host
USB Port 2
4 2D-
OE 6
GND
5
To Microcontroller
Figure 20. Package Layout Diagram
16
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
TS3USB221E
www.ti.com
SCDS263D – SEPTEMBER 2009 – REVISED SEPTEMBER 2019
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Implications of Slow or Floating CMOS Inputs, SCBA004
• High Speed Layout Guidelines, SCAA082
• USB 2.0 Board Design and Layout Guidelines, SPRAAR7
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Submit Documentation Feedback
Copyright © 2009–2019, Texas Instruments Incorporated
Product Folder Links: TS3USB221E
17
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS3USB221EDRCR
ACTIVE
VSON
DRC
10
3000
RoHS & Green
NIPDAU
TS3USB221ERSER
ACTIVE
UQFN
RSE
10
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
ZVM
Level-1-260C-UNLIM
-40 to 85
(LGO, LGR, LGV)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
