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TS3USB3200
SCDS333B – JUNE 2012 – REVISED JULY 2016
TS3USB3200 SPDT USB 2.0 High-Speed (480 Mbps) and Mobile High-Definition Link
(MHL) or Mobility Display Port (MyDP) Switch With additional SPDT ID Select Switch and
Flexible Power Control
1 Features
2 Applications
•
•
•
•
•
•
1
•
•
•
•
•
VCC Range: 2.7 V to 4.3 V
Mobile High-Definition Link (MHL) or Mobility
Display Port (MyDP) Switch
– Bandwidth (–3 dB): 5.5 GHz
– Ron (Typical): 5.7 Ω
– Con (Typical): 2.5 pF
USB Switch
– Bandwidth (–3 dB): 5.5 GHz
– Ron (Typical): 4.6 Ω
– Con (Typical): 2.5 pF
Current Consumption: 40 µA Typical
Special Features
– Flexible Power Control: Device Can be
Powered by VBUS Without VCC or by VCC Alone
– IOFF Protection Prevents Current Leakage in
Powered-Down State (VCC and VBUS= 0 V)
– 1.8-V Compatible Control Inputs (SEL1, SEL2,
and PSEL)
– Overvoltage Tolerance (OVT) on All I/O Pins
up to 5.5 V Without External Components
ESD Performance:
– 3.5-kV Human-Body Model (A114B, Class II)
– 1-kV Charged Device Model (C101)
Package:
– 16-Pin UQFN Package (2.6 × 1.8 mm, 0.4-mm
Pitch)
3 Description
The TS3USB3200 is a differential single-pole, double
throw (SPDT) multiplexer that includes a high-speed
Mobile High-Definition Link (MHL) or Mobility Display
Port (MyDP) switch and a USB 2.0 High-Speed
(480 Mbps) switch in the same package. Additionally
included is a single-pole, double throw (SPDT)
USB/MHL or MyDP ID switch for easy information
control. These configurations allow the system
designer to use a common USB or Mico-USB
connector for both MHL/MyDP video signals and USB
data.
The TS3USB3200 has a VCC range of 2.7 V to 4.3 V
and also has the option to be powered by VBUS
without VCC. The device supports a overvoltage
tolerance (OVT) feature which allows the I/O pins to
withstand overvoltage conditions (up to 5.5 V). The
power-off protection feature forces all I/O pins to be in
high impedance mode when power is not present.
This allows full isolation of the signals lines without
excessive leakage current. The select pins of
TS3USB3200 are compatible with 1.8-V control
voltage, allowing them to be directly interfaced with
the General Purpose I/O (GPIO) from a mobile
processor.
The TS3USB3200 comes with a small 16-pin UQFN
package (2.6 mm × 1.8 mm in size), which makes it a
perfect candidate for mobile applications.
Switch Diagram
USB+
D+
Device Information(1)
MHL+
USB-
D-
MHLID_MHL
ID_COM
ID_USB
SEL1
Control
Logic
SEL2
VBUS
Switch
Power
PSEL
VCC
USB 2.0 Applications
Mobile High-Definition Link (MHL) Applications
Mobility Display Port (MyDP) Applications
Mobile Phones
PART NUMBER
TS3USB3200
PACKAGE
UQFN (16)
BODY SIZE (NOM)
2.60 mm × 1.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3USB3200
SCDS333B – JUNE 2012 – REVISED JULY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Dynamic Characteristics ...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Applications ................................................ 11
9 Power Supply Recommendations...................... 13
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 15
11 Device and Documentation Support ................. 16
11.1
11.2
11.3
11.4
11.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
16
16
16
16
16
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (July 2013) to Revision B
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Removed Ordering Information table, see POA at the end of the data sheet ...................................................................... 1
•
Changed Thermal Information table ...................................................................................................................................... 4
Changes from Original (June 2012) to Revision A
Page
•
Added Mobility Display Port (MyDP) option functionality. ...................................................................................................... 1
•
Changed VI/O MIN value from –0.3 to –0.5............................................................................................................................. 4
•
Updated Typical Application diagrams. ................................................................................................................................ 11
2
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SCDS333B – JUNE 2012 – REVISED JULY 2016
5 Pin Configuration and Functions
ID_COM
ID_MHL
14
13
MHL+
MHL–
4
9
SEL2
GND
SEL1
8
11
10
7
2
3
USB+
PSEL
VCC
VBUS
D+
D–
15
ID_USB
6
12
5
1
USB–
GND
16
RSV Package
16-Pin UQFN
Top View
Not to scale
Pin Functions
PIN
NO.
NAME
TYPE
DESCRIPTION
1
GND
Ground
Ground
2
D+
I/O
Data Signal Path (Differential +)
3
D–
I/O
Data Signal Path (Differential –)
4
PSEL
Input
Power Source Select Line
5
SEL1
Input
Control Input Select Line 1
6
USB–
I/O
USB Data Signal Path (Differential –)
7
USB+
I/O
USB Data Signal Path (Differential +)
8
GND
Ground
9
SEL2
Input
10
MHL–
I/O
MHL Data Signal Path (Differential–)
11
MHL+
I/O
MHL Data Signal Path (Differential +)
12
ID_USB
I/O
ID Signal Path for USB
13
ID_MHL
I/O
ID Signal Path for MHL
14
ID_COM
I/O
ID Common Signal Path
15
VBUS
Power
Alternative Device Power
16
VCC
Power
Power supply
Ground
Control Input Select Line 2
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
Supply voltage (3)
VCC ,VBUS
(3)
VI/O
Input/Output DC voltage
IK
Input/Output port diode current
VI
Digital input voltage range (SEL1, SEL2, PSEL)
VI/O < 0
(3)
MIN
MAX
UNIT
–0.3
5.5
V
–0.5
5.5
Digital logic input clamp current
ICC
Continuous current through VCC
IGND
Continuous current through GND
–100
Tstg
Storage temperature
–65
(2)
(3)
mA
–0.3
IIK
(1)
V
–50
VI < 0
5.5
V
–50
mA
100
mA
mA
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
MAX
VCC
Supply voltage
2.7
4.3
V
VBUS
VBUS Supply voltage
4.3
5.5
V
VI/O
VI/O
Analog voltage for USB and ID signal path
0
3.6
V
1.6
3.4
V
0
VCC
V
(USB)
UNIT
(ID)
VI/O
(MHL)
Analog voltage for MHL signal path
VI
Digital input voltage (SEL1, SEL2, PSEL)
TRAMP (VCC)
Power supply ramp time requirement (VCC)
100
1000
μs/V
TRAMP (VBUS)
Power supply ramp time requirement (VBUS)
100
1000
μs/V
TA
Operating free-air temperature
–40
85
ºC
6.4 Thermal Information
TS3USB3200
THERMAL METRIC (1)
RSV (UQFN)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance (2)
109.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
36
°C/W
RθJB
Junction-to-board thermal resistance
46.4
°C/W
ψJT
Junction-to-top characterization parameter
1
°C/W
ψJB
Junction-to-board characterization parameter
49.7
°C/W
(1)
(2)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
The package thermal impedance is calculated in accordance with JESD 51-7.
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6.5 Electrical Characteristics
TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MHL SWITCH
RON
ON-state resistance
VCC = 2.7 V
VI/O = 1.6 V, ION = –8 mA
5.7
Ω
ΔRON
ON-state resistance match
between + and – paths
VCC = 2.7 V
VI/O = 1.6 V, ION = –8 mA
0.4
Ω
RON
ON-state resistance flatness
VCC = 2.7 V
VI/O = 1.6 V to 3.4 V, ION = –8 mA
1
Ω
(FLAT)
IOZ
OFF leakage current
VCC = 4.3 V
Switch OFF, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = 0 V
IOFF
Power-off leakage current
VCC = 0 V
Switch ON or OFF, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = NC
ION
ON leakage current
VCC = 4.3 V
Switch ON, VMHL+/MHL– = 1.6 V to 3.4 V,
VD+/D– = NC
RON
ON-state resistance
VCC = 2.7 V
VI/O = 0.4 V, ION = –8 mA
4.6
Ω
ΔRON
ON-state resistance match
between + and – paths
VCC = 2.7 V
VI/O = 0.4 V, ION = –8 mA
0.4
Ω
RON
ON-state resistance flatness
VCC = 2.7 V
VI/O = 0 V to 0.4 V, ION = –8 mA
1
Ω
–2
2
µA
–10
10
µA
–2
2
µA
USB SWITCH
(FLAT)
IOZ
OFF leakage current
VCC = 4.3 V
Switch OFF, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = 0 V
IOFF
Power-off leakage current
VCC = 0 V
Switch ON or OFF, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = NC
ION
ON leakage current
VCC = 4.3 V
Switch ON, VUSB+/USB– = 0 V to 4.3 V,
VD+/D– = NC
RON
ON-state resistance
VCC = 2.7 V
VI/O = 3.3 V, ION = –8 mA
6.5
Ω
ΔRON
ON-state resistance match
between + and – paths
VCC = 2.7 V
VI/O = 3.3 V, ION = –8 mA
0.4
Ω
IOZ
OFF leakage current
VCC = 4.3 V
Switch OFF,
VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = 0 V
–1
1
µA
IOFF
Power-off leakage current
VCC = 0 V
Switch ON or OFF,
VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = NC
–10
10
µA
ION
ON leakage current
VCC = 4.3 V
Switch ON, VID_MHL/ID_USB = 0 V to 4.3 V,
VID_COM = 0 V
–1
1
µA
–2
2
µA
–10
10
µA
–2
2
µA
ID SWITCH
DIGITAL CONTROL INPUTS (SEL1, SEL2, PSEL)
VIH
Input logic high
VCC = 2.7 V to 4.3 V
VIL
Input logic low
VCC = 2.7 V to 4.3 V
1.3
IIN
Input leakage current
VCC = 4.3 V, VI/O = 0 V to 4.3 V, VIN = 0 V to 2 V
V
–10
0.6
V
10
μA
6.6 Dynamic Characteristics
TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MHL (1)/USB/ ID SWITCH
tpd
Propagation Delay
RL = 50 Ω, CL = 5 pF
VCC = 2.7 V to 4.3 V
tON
Turnon time
RL = 50 Ω, CL = 5 pF
VCC = 2.7 V to 4.3 V
400
ns
tOFF
Turnoff time
RL = 50 Ω, CL = 5 pF
VCC = 2.7 V to 4.3 V
400
ns
tSK(P)
Skew of opposite transitions of same
VCC = 2.7 V or 3.3V
output
VCC = 2.7 V to 4.3 V
0.1
0.2
ns
CON(MHL)
MHL path ON capacitance
VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz
Switch ON
1.6
pF
CON(USB)
USB path ON capacitance
VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz
Switch ON
1.4
pF
COFF(MHL)
MHL path OFF capacitance
VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz
Switch OFF
1.4
pF
COFF(USB)
USB path OFF capacitance
VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz
Switch OFF
1.6
pF
CI
Digital input capacitance
VCC = 3.3 V, VI = 0 or 2V
2.2
pF
(1)
0.1
ns
Specified by Design
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Dynamic Characteristics (continued)
TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OISO
OFF Isolation
VCC = 2.7 V to 4.3 V, RL = 50 Ω,
f = 240 MHz
XTALK
Crosstalk
VCC = 2.7 V to 4.3 V, RL = 50 Ω,
f = 240 MHz
Switch ON
–37
dB
BW(MHL)
MHL path –3-dB bandwidth
VCC = 2.7 V to 4.3 V, RL = 50 Ω
Switch ON
5.5
GHz
BW(USB)
USB path –3-dB bandwidth
VCC = 2.7 V to 4.3 V, RL = 50 Ω
Switch ON
5.5
GHz
BW(ID)
ID path –3-dB bandwidth
VCC = 2.7 V to 4.3 V, RL = 50 Ω
Switch ON
4
GHz
Switch OFF
–37
dB
SUPPLY
VBUS
VBUS Power supply voltage
4.3
5.5
VCC
Power supply voltage
2.7
4.3
V
ICC
Positive supply current
VCC = 4.3 V, VIN = VCC or GND, VI/O = 0 V
Switch ON or OFF
70
µA
Positive supply current (VBUS mode)
VCC = 0 V, VBUS = 5.5 V, VIN = VCC or GND,
VI/O = 0 V
Switch ON or OFF
50
µA
ICC,
6
VBUS
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40
V
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6.7 Typical Characteristics
6
8
VCC = 2.7 V
Ion = 8 mA
7.5
VCC = 2.7 V
Ion = 8 mA
5.5
7
5
RON USB (Ω)
RON ID PATH (Ω)
6.5
6
5.5
5
4.5
4
3.5
4.5
3
4
2.5
3.5
3
0
0.5
1
1.5
Input Voltage (V)
2
2
0
0.5
Figure 1. ON-Resistance vs VI for MHL Switch
1
1.5
Input Voltage (V)
G005
2
G006
Figure 2. ON-Resistance vs VI for USB Switch
8
VCC = 2.7 V
Ion = 8 mA
RON ID PATH (Ω)
7
6
5
4
3
1.8
2.3
2.8
3.3
Input Voltage (V)
3.8
G007
Figure 3. ON-Resistance vs VI for ID Switch
Figure 4. Gain vs Frequency for MHL Switch
Figure 5. Gain vs Frequency for USB Switch
Figure 6. Off Isolation vs Frequency for MHL Path
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Typical Characteristics (continued)
Figure 7. Off Isolation vs Frequency for USB Path
Figure 8. Crosstalk vs Frequency for MHL Path
Figure 9. Crosstalk vs Frequency for USB Path
8
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7 Detailed Description
7.1 Overview
The TS3USB3200 supports high-speed Mobile High-Definition Link (MHL) or Mobility Display Port (MyDP)
switching, as well as USB 2.0 High-Speed (480 Mbps) switching in the same package. An additional integrated
ID switch is also included to support USB/MHL or MyDP ID for easy information control. These configurations
allow the system designer to use a common USB or Mico-USB connector to support both MHL/MyDP video
signals and USB data.
7.2 Functional Block Diagram
USB+
D+
MHL+
USB-
D-
MHLID_MHL
ID_COM
ID_USB
SEL1
Control
Logic
SEL2
VBUS
Switch
Power
PSEL
VCC
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7.3 Feature Description
7.3.1 Flexible Power Control
Device can be powered by VBUS or by VCC. This allows the device to run off a 4.3-V battery voltage or 5 V from
an external USB device. If both a battery and external USB device are supplying voltage on the VCC and VBUS
pins the PSEL can be used to select which power supply is used to save battery power.
7.3.2 IOFF Protection Prevents Current Leakage in Powered Down State (VCC and VBUS= 0 V)
When there is no power supplied to the IC, all of the I/O signal paths are placed in a high impedance state, which
isolates the data paths when they are not being used.
7.3.3 1.8-V Compatible Control Inputs (SEL1, SEL2, and PSEL)
The TS3USB3200 logic control input pins can operate with 1.8-V logic since the VIH minimum for the SEL1,
SEL2, and PSEL is 1.3 V.
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7.4 Device Functional Modes
The TS3USB32000 device can select which power supply pin VCC or VBUS will power the device when voltages
are present on both pins.
Table 1. Function Table (Power Source)
(1)
VCC
VBUS
PSEL (1)
POWER SOURCE
L
L
X
No Power. All I/O in High-Z
L
H
X
VBUS
H
L
X
VCC
H
H
L
VCC
H
H
H
VBUS
The PSEL pin has 6-MΩ weak pulldown resistor to GND to make its default value to be LOW.
Table 2. Function Table (Signal and ID Select)
SEL1
(1)
10
(1)
SEL2 (1)
CONNECTION
High-Z
L
L
D+/D– to USB+/USB–, ID_COM to ID_USB
MHL+/MHL–, ID_MHL
L
H
D+/D– to USB+/USB–, ID_COM to ID_MHL
MHL+/MHL–, ID_USB
H
L
D+/D– to MHL+/MHL–, ID_COM to ID_USB
USB+/USB–, ID_MHL
H
H
D+/D– to MHL+/MHL–, ID_COM to ID_MHL
USB+/USB–, ID_USB
The SEL1 and SEL2 pins have 6-MΩ weak pulldown resistor to GND to make their default value to be
LOW.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
For Mobility Display Port Applications (MyDP) the signal voltage must be biased to ensure that the signal never
exceeds the Recommended Operating Conditions for the TS3USB3200. Namely the VI/O must never operate
outside the range of 0 V to 3.6 V.
The control pins (SEL1 and SEL2) have built-in 6-MΩ pulldown resistors to ensure the USB paths are enabled
for TS3USB3200 and allow connectivity to the TSU5611 USB accessory switch.
8.2 Typical Applications
8.2.1 TS3USB3200 Configured to be Powered by VBUS Through the MicroUSB Connector
During manufacturing test when battery power is not available, the TS3USB3200 can be configured, as shown in
Figure 10, to be powered by VBUS through the microUSB connector.
To
Battery
Charger
VBAT
100Ω
VBUS
VCC
VBUS
VBUS
USB+
DP
D+
USB-
DM
ID_USB
ID
DID
GND
D+
D-
VBAT
Baseband or
Application
Processor
USB_DM
USB_DP
UART_TX
ID_COM
GND
UART_RX
SDA
SCL
INT
MicroUSB
Connector
TSU6111A
SEL1
SEL2
MHL+
MHL+/MyDP+
PSEL
MHL-
MHL-/MyDP-
ID_MHL
HDMI
CBUS/ID
HDMI to
MHL/MyDP Bridge
TS3USB3200
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Figure 10. Typical Application Schematic Powered by VBUS
8.2.1.1 Design Requirements
Design requirements of the MHL and USB 1.0,1.1, and 2.0 standards must be followed. The TS3USB3200 has
internal 6-MΩ pulldown resistors on SEL and OE, so no external resistors are required on the logic pins. The
internal pulldown resistor on SEL ensures the USB channel is selected by default. The internal pulldown resistor
on OE enables the switch when power is applied to VCC.
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Typical Applications (continued)
8.2.1.2 Detailed Design Procedure
The TS3USB3200 can be properly operated without any external components. However, TI recommends that
unused pins must be connected to ground through a 50-Ω resistor to prevent signal reflections back into the
device.
8.2.1.3 Application Curves
12
Figure 11. 480-Mbps USB 2.0 Eye Pattern With No Device
Figure 12. 480-Mbps USB 2.0 Eye Pattern for USB Switch
Figure 13. Eye Pattern: 0.7-Gbps MHL Eye Pattern for With
No Device
Figure 14. Eye Pattern: 0.7-Gbps MHL Eye Pattern for MHL
Switch
Figure 15. Eye Pattern: 2.2-Gbps MHL Eye Pattern for With
No Device
Figure 16. Eye Pattern: 2.2-Gbps MHL Eye Pattern for MHL
Switch
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Typical Applications (continued)
Figure 17. Eye Pattern: 3-Gbps MHL Eye Pattern for With
No Device
Figure 18. Eye Pattern: 3-Gbps MHL Eye Pattern for MHL
Switch
8.2.2 TS3USB3200 Powered by Mobile Device’s Standalone Battery
The TS3USB3200 can also be powered by the mobile device’s standalone battery. Figure 19 shows a typical
implementation. The VBUS pin of the TS3USB3200 can simply be grounded under such conditions.
To
Battery
Charger
VBAT
VBUS
VCC
VBUS
VBUS
USB+
DP
D+
USB-
DM
ID_USB
ID
DID
GND
D+
D-
VBAT
Baseband or
Application
Processor
USB_DM
USB_DP
UART_TX
ID_COM
GND
UART_RX
SDA
SCL
INT
MicroUSB
Connector
TSU6111A
SEL1
SEL2
MHL+
MHL+/MyDP+
PSEL
MHL-
MHL-/MyDP-
ID_MHL
HDMI
CBUS/ID
HDMI to
MHL/MyDP Bridge
TS3USB3200
Copyright © 2016, Texas Instruments Incorporated
Figure 19. Typical Application Schematic Powered by Mobile Devices
8.2.2.1 Design Requirements
The TS3USB3200 can be properly operated without any external components. However, TI recommends that
unused pins must be connected to ground through a 50-Ω resistor to prevent signal reflections back into the
device.
8.2.2.2 Detailed Design Procedure
The VBUS pin of the TS3USB3200 can simply be grounded under such conditions.
9 Power Supply Recommendations
Power to the device is supplied through the VCC pin and must follow the USB 1.0, 1.1, and 2.0 standards. TI
recommends placing a bypass capacitor as close to the supply pin VCC as possible to help smooth out lower
frequency noise to provide better load regulation across the frequency spectrum.
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10 Layout
10.1 Layout Guidelines
Place supply bypass capacitors as close to VCC pin as possible and avoid placing the bypass capacitors near
the D+/D– traces.
The high-speed D+/D- must match and be no more than 4 inches long; otherwise, the eye diagram performance
may be degraded. A high-speed USB connection is made through a shielded, twisted pair cable with a differential
characteristic impedance. In layout, the impedance of D+ and D– traces must match the cable characteristic
differential impedance for optimal performance.
Route the high-speed USB signals using a minimum of vias and corners which reduces signal reflections and
impedance changes. When a via must be used, increase the clearance size around it to minimize its
capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of
picking up interference from the other layers of the board. Be careful when designing test points on twisted pair
lines; through-hole pins are not recommended.
When it becomes necessary to turn 90°, use two 45° turns or an arc instead of making a single 90° turn. This
reduces reflections on the signal traces by minimizing impedance discontinuities.
Do not route USB traces under or near crystals, oscillators, clock signal generators, switching regulators,
mounting holes, magnetic devices, or ICs that use or duplicate clock signals.
Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is unavoidable, then
the stub must be less than 200 mm.
Route all high-speed USB signal traces over continuous GND planes, with no interruptions.
Avoid crossing over anti-etch, commonly found with plane splits.
Due to high frequencies associated with the USB, a printed-circuit board with at least four layers is
recommended; two signal layers separated by a ground and power layer as shown in Figure 20.
Signal 1
GND Plane
Power Plane
Signal 2
Figure 20. Four-Layer Board Stack-Up
The majority of signal traces must run on a single layer, preferably Signal 1. Immediately next to this layer should
be the GND plane, which is solid with no cuts. Avoid running signal traces across a split in the ground or power
plane. When running across split planes is unavoidable, sufficient decoupling must be used. Minimizing the
number of signal vias reduces EMI by reducing inductance at high frequencies.
14
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10.2 Layout Example
0603 Cap
High Speed Bus
GND
D+
SEL1
D-
PSEL
To System Controller
High Speed Bus
To System Controller
= VIA to GND Plane
VCC
High Speed Bus
USB-
VBUS
USB+
ID_CO
M
GND
ID_MH
L
High Speed Bus
To device
ID_BU
S
To System
MHL-
High Speed Bus
SEL2
High Speed Bus
To System Controller
MHL+
To System
Figure 21. TS3USB3200 Layout Example
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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PACKAGE OPTION ADDENDUM
www.ti.com
28-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS3USB32008RSVR
ACTIVE
UQFN
RSV
16
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
ZTV
TS3USB3200RSVR
ACTIVE
UQFN
RSV
16
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
ZTO
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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