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TS5A3166
SCDS186E – FEBRUARY 2005 – REVISED FEBRUARY 2018
TS5A3166 0.9-Ω SPST Analog Switch
1 Features
3 Description
•
•
•
•
•
•
The TS5A3166 device is a single-pole single-throw
(SPST) analog switch that is designed to operate
from 1.65 V to 5.5 V. The device offers a low ONstate resistance. The device has excellent total
harmonic distortion (THD) performance and
consumes very low power. These features make this
device suitable for portable audio applications.
1
•
Low ON-State Resistance (0.9 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
2 Applications
•
•
•
•
•
•
•
•
•
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Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
Microphone Switching – Notebook Docking
Device Information(1)
PART NUMBER
TS5A3166
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.90 mm × 1.60 mm
SC70 (5)
2.00 mm × 1.25 mm
DSBGA (5)
1.388 mm × 0.888
mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
1
NO
IN
SW
2
COM
4
Copyright © 2018, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A3166
SCDS186E – FEBRUARY 2005 – REVISED FEBRUARY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
8
1
1
1
2
3
3
Absolute Maximum Ratings ..................................... 3
ESD Ratings ............................................................ 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics for 5-V Supply .................. 4
Electrical Characteristics for 3.3-V Supply................ 6
Electrical Characteristics for 2.5-V Supply................ 7
Electrical Characteristics for 1.8-V Supply ............... 9
Typical Characteristics ............................................ 11
Parameter Measurement Information ................ 13
Detailed Description ............................................ 16
8.1 Overview ................................................................. 16
8.2 Functional Block Diagram ....................................... 16
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 16
9
Application and Implementation ........................ 17
9.1 Application Information............................................ 17
9.2 Typical Application ................................................. 18
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Example .................................................... 20
12 Device and Documentation Support ................. 21
12.1
12.2
12.3
12.4
12.5
Device Support ....................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
22
22
22
22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (February 2016) to Revision E
•
Page
Changed the YZP package pin numbers .............................................................................................................................. 3
Changes from Revision C (May 2015) to Revision D
Page
•
Added "port" to COM description in Pin Functions table........................................................................................................ 3
•
Deleted "digitial" from GND description in Pin Functions table .............................................................................................. 3
Changes from Revision B (September 2013) to Revision C
Page
•
Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table,
Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Deleted Ordering Information table. ....................................................................................................................................... 1
Changes from Revision A (October 2012) to Revision B
Page
•
Removed 'Isolation in Powered-Off Mode, V+ = 0' bullet from Features ................................................................................ 1
•
Changed pin name from NC to NO throughout the datasheet. .............................................................................................. 1
2
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SCDS186E – FEBRUARY 2005 – REVISED FEBRUARY 2018
5 Pin Configuration and Functions
DBV and DCK Packages
5-Pin SOT-23 and SC-70
Top View
YZP Package
5-Pin DSBGA
Bottom View
NO 1
COM
GND
5
V+
GND
C1
COM
B1
NO
A1
C2
IN
A2
V+
2
4
3
IN
Pin Functions
PIN
DBC, DCK
NO.
YZP
NO.
NAME
1
A1
NO
2
B1
3
C1
4
5
TYPE
DESCRIPTION
I/O
Normally opened port
COM
I/O
Common port
GND
GND
C2
IN
I
A2
V+
Power
Ground
Digital control pin to connect COM to NO
Power Supply
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
V+
Supply voltage (3)
–0.5
6.5
V
VNO
VCOM
Analog voltage (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
INO
ICOM
ON-state switch current
VI
Digital input voltage (3) (4)
IIK
Digital clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
–100
Tstg
Storage temperature
–65
Tj
Junction temperature
(1)
(2)
(3)
(4)
(5)
(6)
ON-state peak switch current (6)
VNO, VCOM < 0
VNO, VCOM = 0 to V+
VI < 0
–50
mA
–200
200
–400
400
–0.5
6.5
–50
mA
V
mA
100
mA
mA
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle.
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TS5A3166
SCDS186E – FEBRUARY 2005 – REVISED FEBRUARY 2018
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6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VI/O
Input/output voltage
V+
Supply voltage
VI
Control Input Voltage
TA
Operating free-air temperature
MAX
UNIT
0
V+
V
1.65
5.5
V
0
5.5
V
–40
85
°C
6.4 Thermal Information
TS5A3166
THERMAL METRIC (1)
RθJA
(1)
DBV (SOT)
DCK (SC-70)
YZP (DSBGA)
5 PINS
5 PINS
5 PINS
206
252
132
Junction-to-ambient thermal resistance
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics for 5-V Supply
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO
Analog signal
range
rpeak
Peak ON
resistance
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron
ON-state
resistance
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron(flat)
ON-state
resistance
flatness
INO(OFF)
NO
OFF leakage
current
0
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,
VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,
Full
Full
25°C
Full
VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
25°C
25°C
ICOM(OFF)
VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,
ICOM(PWROFF)
(1)
4
VCOM = 5.5 V to 0,
VNO = 0 to 5.5 V,
0.7
Full
Switch OFF,
see Figure 14
Full
25°C
Full
0.9
1
V
Ω
Ω
0.15
4.5 V
0.09
Full
Switch OFF,
see Figure 14
1.1
1.2
4.5 V
0.15
Ω
0.15
25°C
INO(PWROFF)
COM
OFF leakage
current
0.8
4.5 V
25°C
Switch ON,
see Figure 13
V+
–20
5.5 V
0V
–100
–5
0V
0.4
5
15
4
–100
–5
20
100
–15
–20
5.5 V
4
0.4
μA
20
100
–15
nA
5
15
nA
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
INO(ON)
NO
ON leakage
current
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
ICOM(ON)
COM
ON leakage
current
VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,
TA
V+
25°C
Switch ON,
see Figure 15
Switch ON,
see Figure 15
Full
5.5 V
TYP
MAX
–2
0.3
2
–20
25°C
Full
MIN
–2
5.5 V
20
0.3
UNIT
nA
2
–20
20
nA
Digital Control Inputs (IN)
VIH
Input logic high
Full
2.4
5.5
V
VIL
Input logic low
Full
0
0.8
V
Input leakage
current
VI = 5.5 V or 0
25°C
–2
tON
Turnon time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
tOFF
Turnoff time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0 ,
CNO(OFF)
NO
OFF capacitance
CCOM(OFF)
IIH, IIL
Full
5.5 V
0.3
–20
2
20
nA
Dynamic
25°C
5V
2.5
Full
4.5 V to
5.5 V
1.5
4.5
7
7.5
9
ns
25°C
5V
6
Full
4.5 V to
5.5 V
11.5
4
CL = 1 nF,
see Figure 20
25°C
5V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
19
pF
COM
OFF capacitance
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
CNO(ON)
NO
ON capacitance
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
CCOM(ON)
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
CI
Digital input
capacitance
VI = V+ or GND,
See Figure 16
25°C
5V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
5V
200
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
see Figure 19
25°C
5V
–64
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 21
25°C
5V
0.005%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
12.5
ns
Supply
I+
25°C
Full
5.5 V
0.01
0.1
0.5
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6.6 Electrical Characteristics for 3.3-V Supply
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO
Analog signal
range
rpeak
Peak ON
resistance
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron
ON-state
resistance
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron(flat)
ON-state
resistance
flatness
INO(OFF)
NO
OFF leakage
current
0
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,
Full
Full
25°C
Full
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
25°C
25°C
ICOM(OFF)
VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,
Full
Switch OFF,
see Figure 14
Full
25°C
VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,
ICOM(PWROFF)
1
Full
INO(ON)
NO
ON leakage
current
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
Switch ON,
see Figure 15
ICOM(ON)
COM
ON leakage
current
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Switch ON,
see Figure 15
0.09
Ω
Ω
0.15
Ω
0.15
–2
3.6 V
0V
3.6 V
0V
–1
1
5
0.5
0.1
1
5
0.2
–20
μA
nA
μA
2
20
0.2
nA
2
20
–5
–2
3.6 V
0.1
–20
–1
2
20
–5
–2
3.6 V
0.5
–20
–2
25°C
Full
V
0.3
3V
25°C
Full
1.4
1.5
Full
Switch OFF,
see Figure 14
1.5
1.7
3V
25°C
INO(PWROFF)
COM
OFF leakage
current
1.1
3V
25°C
Switch ON,
see Figure 13
V+
nA
2
–20
20
nA
Digital Control Inputs (IN)
VIH
Input logic high
Full
2
5.5
V
VIL
Input logic low
Full
0
0.8
V
Input leakage
current
VI = 5.5 V or 0
25°C
–2
tON
Turnon time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
tOFF
Turnoff time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF)
NO
OFF capacitance
CCOM(OFF)
IIH, IIL
Full
3.6 V
0.3
–20
2
20
nA
Dynamic
25°C
3.3 V
2
Full
3 V to
3.6 V
1.5
25°C
3.3 V
6.5
Full
3 V to
3.6 V
4
CL = 1 nF,
see Figure 21
25°C
3.3 V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
19
pF
COM
OFF capacitance
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
18
pF
CNO(ON)
NO
ON capacitance
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
CCOM(ON)
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
(1)
6
5
10
11
9
ns
12
13
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TA
V+
See Figure 16
25°C
3.3 V
2
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
3.3 V
200
MHz
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
see Figure 19
25°C
3.3 V
–64
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 21
25°C
3.3 V
0.01%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
CI
Digital input
capacitance
VI = V+ or GND,
BW
Bandwidth
OISO
THD
MIN
TYP
MAX
UNIT
pF
Supply
I+
25°C
Full
0.01
3.6 V
0.1
0.25
μA
6.7 Electrical Characteristics for 2.5-V Supply
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO
Analog signal range
rpeak
Peak ON resistance
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron
ON-state resistance
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
2.3 V
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
ron(flat)
ON-state resistance
flatness
INO(OFF)
VNO = 1 V,
VCOM = 3 V,
or
NO
VNO = 3 V,
OFF leakage current VCOM = 1 V,
INO(PWROFF
ICOM(OFF)
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
FF)
25°C
Full
25°C
Full
Switch OFF,
see Figure 14
Full
25°C
25°C
Switch ON,
see Figure 15
Switch ON,
see Figure 15
INO(ON)
NO
ON leakage current
ICOM(ON)
COM
ON leakage current
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Full
Full
2.4
2.3 V
0.4
Ω
Ω
0.6
Ω
0.6
–5
2.7 V
0.3
–50
–2
0V
–5
2.7 V
0.05
0.3
0.05
2.7 V
–20
–2
2.7 V
2
15
0.3
μA
nA
μA
2
20
0.3
nA
5
50
–15
–2
2
15
–50
–2
0V
5
50
–15
25°C
Full
2.1
V
0.7
25°C
VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
1.2
Full
Switch OFF,
see Figure 14
2.4
2.6
2.3 V
25°C
VCOM = 1 V,
VNO = 3 V,
or
COM
VCOM = 3 V,
OFF leakage current VNO = 1 V,
ICOM(PWRO
Full
V+
1.8
2.3 V
25°C
Switch ON,
see Figure 13
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
)
Full
0
nA
2
–20
20
nA
Digital Control Inputs (IN1, IN2)
VIH
Input logic high
Full
1.8
5.5
V
VIL
Input logic low
Full
0
0.6
V
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
25°C
Input leakage
current
VI = 5.5 V or 0
tON
Turnon time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
tOFF
Turnoff time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF)
NO
OFF capacitance
CCOM(OFF)
IIH, IIL
TA
Full
V+
2.7 V
MIN
TYP
–2
0.3
–20
MAX
2
20
UNIT
nA
Dynamic
25°C
2.5 V
2
Full
2.3 V to
2.7 V
1
25°C
2.5 V
Full
2.3 V to
2.7 V
CL = 1 nF,
see Figure 21
25°C
2.5 V
4
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
19.5
pF
COM
OFF capacitance
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
18.5
pF
CNO(ON)
NO
ON capacitance
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
CCOM(ON)
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
CI
Digital input
capacitance
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.5 V
150
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
see Figure 19
25°C
2.5 V
–62
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 21
25°C
2.5 V
0.02%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
4.5
6
10
12
8
3
ns
10.5
15
ns
Supply
I+
8
25°C
Full
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0.001
0.02
0.25
μA
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6.8 Electrical Characteristics for 1.8-V Supply (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO
Analog signal
range
rpeak
Peak ON
resistance
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron
ON-state
resistance
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
see Figure 13
25°C
ron(flat)
ON-state
resistance
flatness
INO(OFF)
NO
OFF leakage
current
0
0 ≤ VNO ≤ V+,
ICOM = –100 mA,
Full
Full
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
25°C
VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,
Full
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
25°C
25°C
ICOM(OFF)
VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,
ICOM(PWROFF
Full
Switch OFF,
see Figure 14
Full
25°C
VCOM = 0 to 3.6 V,
VNO = 3.6 V to 0,
)
1.6
1.65 V
Full
INO(ON)
NO
ON leakage
current
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
Switch ON,
see Figure 15
ICOM(ON)
COM
ON leakage
current
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Switch ON,
see Figure 15
Ω
Ω
4.1
22
Ω
27
1.95 V
0V
1.95 V
0V
1.95 V
25°C
Full
V
2.8
25°C
Full
3.9
4.0
1.65 V
25°C
Switch OFF,
see Figure 14
25
30
Full
INO(PWROFF)
COM
OFF leakage
current
4.2
1.65 V
25°C
Switch ON,
see Figure 13
V+
1.95 V
–5
5
–50
50
–2
2
–10
10
–5
5
–50
50
nA
μA
nA
–2
2
–10
10
–2
2
–20
20
–2
2
–20
20
1.5
5.5
V
0.6
V
μA
nA
nA
Digital Control Inputs (IN1, IN2)
VIH
Input logic high
VIL
Input logic low
Full
0
Input leakage
current
VI = 5.5 V or 0
25°C
–2
tON
Turnon time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
tOFF
Turnoff time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF)
NO
OFF capacitance
CCOM(OFF)
COM
OFF capacitance
IIH, IIL
Full
Full
1.95 V
0.3
–20
2
20
nA
Dynamic
(1)
25°C
1.8 V
3
Full
1.65 V to
1.95 V
9
18
1
25°C
1.8 V
5
Full
1.65 V to
1.95 V
4
CL = 1 nF,
see Figure 21
25°C
1.8 V
2
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
19.5
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18.5
pF
20
10
ns
15.5
18.5
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 1.8-V Supply(1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
CNO(ON)
NO
ON capacitance
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
36.5
pF
CCOM(ON)
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
36.5
pF
CI
Digital input
capacitance
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
1.8 V
150
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
see Figure 19
25°C
1.8 V
–62
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz
see Figure 21
25°C
1.8 V
0.055
%
Positive supply
current
VI = V+ or GND,
Switch ON or
OFF
Supply
I+
10
25°C
Full
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0.001
0.01
0.15
μA
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6.9 Typical Characteristics
3.5
1.4
3.0
1.2
TA = 85_C
2.5
VCC = 1.8 V
1.0
ron (Ω)
r on (V)
2.0
1.5
VCC = 2.5 V
0.8
1.0
VCC = 3.3 V
0.4
0.5
VCC = 5 V
0.2
0.0
0
0.5
1
1.5 2
2.5
3
3.5
4
4.5
TA = −40_C
0.6
TA = 25_C
0.0
5
0
0.5
1
VCOM (V)
Figure 1. ron vs VCOM
2
2.5
3
Figure 2. ron vs VCOM (V+ = 3 V)
14
1.0
0.9
TA = 85_C
12
Leakage Current (nA)
TA = 25_C
0.8
0.7
ron (Ω)
1.5
VCOM (V)
0.6
0.5
0.4
TA = −40_C
0.3
0.2
INO/NC(OFF)
10
8
ICOM(OFF)
6
INO/NC(ON)
4
ICOM(ON)
2
0.1
0.0
0
0.5
1
1.5
2 2.5
3
VCOM (V)
3.5
4
4.5
5
0
−60
−20
0
20
40
60
80
100
TA (°C)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 3. ron vs VCOM (V+ = 5 V)
1.5
14
V CC = 3.3 V
1
12
tOFF
10
tON/tOFF (ns)
0.5
QC (pC)
−40
V CC = 5 V
0
−0.5
−1
tON
8
6
4
2
−1.5
0
0
0.5
1
1.5
2 2.5 3
3.5
Bias V oltage (V)
4
4.5
5
0
Figure 5. Charge Injection (QC) vs VCOM
1
2
3
V+ (V)
4
5
Figure 6. tON and tOFF vs Supply Voltage
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Typical Characteristics (continued)
3.0
12
10
2.5
8
Logic Threshold (V)
tON/tOFF (ns)
tOFF
6
tON
4
2
2.0
VIH
1.5
VIL
1.0
0.5
0
−60
−40
−20
0
20
40
60
80
0.0
100
0
1
2
TA (°C)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
4
5
6
Figure 8. Logic Threshold vs V+
0
0
−1
−10
−2
−20
Attenuation (dB)
Gain (dB)
3
VCC (V)
−3
−4
−5
−6
−30
−40
−50
−60
−70
−7
−80
−8
0.1
1
10
100
1000
−90
0.1
1
Frequency (MHz)
Figure 9. Gain vs Frequency (V+ = 5 V)
10
Frequency (MHz)
100
1000
Figure 10. OFF Isolation vs Frequency (V+ = 5 V)
60
0.009
VCC = 3.3 V
0.008
50
0.007
40
I+ (nA)
THD (%)
0.006
0.005
VCC = 5 V
0.004
30
20
0.003
0.002
10
0.001
0.000
0
10
100
1000
Frequency (Hz)
10000
100000
−40
−20
0
20
40
60
80
100
TA (°C)
Figure 11. Total Harmonic Distortion vs Frequency
(V+ = 5 V)
12
0
−60
Figure 12. Power-Supply Current vs Temperature
(V+ = 5 V)
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7 Parameter Measurement Information
V+
VNO NO
COM
+
VCOM
Channel ON
r on =
VI
ICOM
IN
VCOM – VNC
Ω
ICOM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INO(OFF), ICOM(PWROFF), INO(PWR(FF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INO(ON))
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Parameter Measurement Information (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND
VI = VIH or VIL
VCOM COM
VBIAS
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
IN
VI
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
V+
VI
RL
CL
VCOM
tON
50 W
35 pF
V+
tOFF
50 W
35 pF
V+
VNO
NO
VCOM
TEST
COM
CL(2)
RL
IN
Logic
Input(1)
V+
Logic
Input
(VI)
GND
50%
50%
0
tON
Switch
Output
(VNC)
tOFF
90%
90%
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 17. Turnon (tON) and Turnoff Time (tOFF)
V+
Network Analyzer
50
VNO
NO
Channel ON: NO to COM
COM
VCOM
VI = V+ or GND
Source
Signal
Network Analyzer Setup
50
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
14
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Parameter Measurement Information (continued)
V+
Network Analyzer
Channel OFF: NO to COM
50
VNO NO
VI = V+ or GND
VCOM
COM
Source
Signal
50
Network Analyzer Setup
VI
50
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
IN
+
GND
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO)
V+
RGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
VCOM
DVCOM
VGEN
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
RGEN = 0
CL = 1 nF
QC = CL × DVCOM
VI = VIH or VIL
GND
(1)
CL includes probe and jig capacitance.
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
Figure 20. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 W
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600
VI
IN
GND
600
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
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8 Detailed Description
8.1 Overview
The TS5A3166 is a single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance. The device has excellent total harmonic distortion (THD)
performance and consumes very low power. These features make this device suitable for portable audio
applications.
8.2 Functional Block Diagram
1
IN
2
SW
NO
COM
4
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8.3 Feature Description
The low ON-state resistance, ON-state resistance matching, and charge injection in the TS5A3166 make this
switch an excellent choice for analog signals that require minimal distortion. In addition, the low THD allows
audio signals to be preserved more clearly as they pass through the device.
The 1.65-V to 5.5-V operation allows compatibility with more logic levels, and the bidirectional I/Os can pass
analog signals from 0 V to V+ with low distortion.
8.4 Device Functional Modes
Table 1. Function Table
16
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
SPST analog switch is a basic component that could be used in any electrical system design. Figure 22 and
Figure 23 are some basic applications that utilize the TS5A3166.
To MCU
SPST
SW
PLL
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Figure 22. Improved Lock Time Circuit Simplified Block Diagram
MCU
Power Enable
PLL
SP5T
SW
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Figure 23. PLL Improved Power Consumption Simplified Block Diagram
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9.2 Typical Application
-
V
I
LMV321
V
+
O
R
1A
R
2A
1
2
r
r
on(1)
1B
on(2)
2B
TS5A3166
R
3
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Figure 24. Gain-Control Circuit for Operational Amplifier
9.2.1 Design Requirements
By choosing values of R1 and R2, such that Rx >> ron(x), ron of TS5A3166 can be ignored. The gain of
operational amplifier can be calculated as follow:
Vo / VI = 1+ R|| / R3
R|| = (R1+ron(1)) || (R2+ron(2))
(1)
(2)
9.2.2 Detailed Design Procedure
Place a switch in series with the input of the operational amplifier. Since the operational amplifier input
impedance is very large, a switch on ron(1) is irrelevant.
9.2.3 Application Curves
3.5
1.4
3.0
1.2
TA = 85_C
VCC = 1.8 V
1.0
2.0
ron (Ω)
r on (V)
2.5
1.5
VCC = 2.5 V
0.8
1.0
VCC = 3.3 V
0.4
0.5
VCC = 5 V
0.2
0.0
0
TA = −40_C
0.6
TA = 25_C
0.0
0.5
1
1.5 2
2.5
3
3.5
4
4.5
5
0
VCOM (V)
Figure 25. ron vs VCOM
18
0.5
1
1.5
VCOM (V)
2
2.5
3
Figure 26. ron vs VCOM (V+ = 3 V)
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Typical Application (continued)
1.0
0.9
TA = 85_C
TA = 25_C
0.8
ron (Ω)
0.7
0.6
0.5
0.4
TA = −40_C
0.3
0.2
0.1
0.0
0
0.5
1
1.5
2 2.5
3
VCOM (V)
3.5
4
4.5
5
Figure 27. ron vs VCOM (V+ = 5 V)
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions.
Each VCC terminal should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF bypass capacitor is recommended. If there are multiple pins labeled VCC, then a 0.01-μF or
0.022-μF capacitor is recommended for each VCC because the VCC pins will be tied together internally. For
devices with dual supply pins operating at different voltages, for example VCC and VDD, a 0.1-µF bypass
capacitor is recommended for each supply pin. It is acceptable to parallel multiple bypass capacitors to reject
different frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor
should be installed as close to the power terminal as possible for best results.
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11 Layout
11.1 Layout Guidelines
Reflections and matching are closely related to loop antenna theory, but different enough to warrant their own
discussion. When a PCB trace turns a corner at a 90° angle, a reflection can occur. This is primarily due to the
change of width of the trace. At the apex of the turn, the trace width is increased to 1.414 times its width. This
upsets the transmission line characteristics, especially the distributed capacitance and self–inductance of the
trace — resulting in the reflection. It is a given that not all PCB traces can be straight, and so they will have to
turn corners. Figure 28 shows progressively better techniques of rounding corners. Only the last example
maintains constant trace width and minimizes reflections.
11.2 Layout Example
BETTER
BEST
2W
WORST
1W min.
W
Figure 28. Trace Example
20
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Device Nomenclature
Table 2. Parameter Description
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
Peak ON-state resistance over a specified voltage range
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under worstcase input and output conditions
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turnon time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turnoff time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
22
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Copyright © 2005–2018, Texas Instruments Incorporated
Product Folder Links: TS5A3166
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TS5A3166DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
(JASF, JASR)
Samples
TS5A3166DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JASF
Samples
TS5A3166DCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JF5, JFF, JFR)
Samples
TS5A3166DCKRE4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JF5, JFF, JFR)
Samples
TS5A3166DCKRG4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JF5, JFF, JFR)
Samples
TS5A3166YZPR
ACTIVE
DSBGA
YZP
5
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
JFN
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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