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UCC21520DW

UCC21520DW

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC16

  • 描述:

    Gate Driver Capacitive Coupling 5700Vrms 2 Channel 16-SOIC

  • 数据手册
  • 价格&库存
UCC21520DW 数据手册
UCC21520, UCC21520A SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 UCC21520 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver 1 Features 3 Description • The UCC21520 and the UCC21520A are isolated dual-channel gate drivers with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion. • • • • • • • • • • • • 2 Applications • • • • • • • HEV and BEV battery chargers Isolated converters in DC-DC and AC-DC power supplies Server, telecom, it and industrial infrastructures Motor drive and DC-to-AC solar inverters LED lighting Inductive heating Uninterruptible power supply (UPS) The input side is isolated from the two output drivers by a 5.7-kVRMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC. Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) UCC21520DW DW SOIC (16) 10.30 mm × 7.50 mm UCC21520ADW DW SOIC (16) 10.30 mm × 7.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. VCCI 3,8 16 VDDA Driver INA 1 DIS 5 NC 7 DT 6 MOD DEMOD Reinforced Isolation • • Universal: dual low-side, dual high-side or halfbridge driver Operating temperature range –40 to +125°C Switching parameters: – 19-ns typical propagation delay – 10-ns minimum pulse width – 5-ns maximum delay matching – 6-ns maximum pulse-width distortion Common-mode transient immunity (CMTI) greater than 100 V/ns Surge immunity up to 12.8 kV Isolation barrier life >40 years 4-A peak source, 6-A peak sink output TTL and CMOS compatible inputs 3-V to 18-V input VCCI range to interface with both digital and analog controllers Up to 25-V VDD output drive supply – 5-V and 8-V VDD UVLO options Programmable overlap and dead time Rejects input pulses and noise transients shorter than 5 ns Fast disable for power sequencing Industry standard wide body SOIC-16 (DW) package Safety-related certifications: – 8000-VPK reinforced Isolation per DIN V VDE V 0884-11:2017-01 – 5.7-kVRMS isolation for 1 minute per UL 1577 – CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards – CQC certification per GB4943.1-2011 Disable, UVLO and Deadtime UVLO 15 OUTA 14 VSSA 13 NC Functional Isolation 12 NC 11 VDDB Driver INB 2 GND 4 MOD DEMOD UVLO 10 OUTB 9 VSSB Copyright © 2017, Texas Instruments Incorporated Functional Block Diagram An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Description (continued).................................................. 3 6 Pin Configuration and Functions...................................3 7 Specifications.................................................................. 4 7.1 Absolute Maximum Ratings........................................ 4 7.2 ESD Ratings............................................................... 4 7.3 Recommended Operating Conditions.........................4 7.4 Thermal Information....................................................5 7.5 Power Ratings.............................................................5 7.6 Insulation Specifications............................................. 5 7.7 Safety-Related Certifications...................................... 6 7.8 Safety-Limiting Values................................................ 6 7.9 Electrical Characteristics.............................................7 7.10 Switching Characteristics..........................................8 7.11 Insulation Characteristics Curves..............................9 7.12 Typical Characteristics............................................ 10 8 Parameter Measurement Information.......................... 14 8.1 Propagation Delay and Pulse Width Distortion......... 14 8.2 Rising and Falling Time.............................................14 8.3 Input and Disable Response Time............................ 14 8.4 Programable Dead Time........................................... 15 8.5 Power-up UVLO Delay to OUTPUT..........................15 8.6 CMTI Testing.............................................................16 9 Detailed Description......................................................17 9.1 Overview................................................................... 17 9.2 Functional Block Diagram......................................... 17 9.3 Feature Description...................................................18 9.4 Device Functional Modes..........................................21 10 Application and Implementation................................ 22 10.1 Application Information........................................... 22 10.2 Typical Application.................................................. 23 11 Power Supply Recommendations..............................34 12 Layout...........................................................................35 12.1 Layout Guidelines................................................... 35 12.2 Layout Example...................................................... 36 13 Device and Documentation Support..........................38 13.1 Third-Party Products Disclaimer............................. 38 13.2 Documentation Support.......................................... 38 13.3 Certifications........................................................... 38 13.4 Receiving Notification of Documentation Updates..38 13.5 Support Resources................................................. 38 13.6 Trademarks............................................................. 38 13.7 Electrostatic Discharge Caution..............................38 13.8 Glossary..................................................................38 14 Mechanical, Packaging, and Orderable Information.................................................................... 38 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (March 2020) to Revision E (December 2021) Page • Updated Features .............................................................................................................................................. 1 • Changed tPWD in Switching Characteristics ....................................................................................................... 8 Changes from Revision C (December 2019) to Revision D (March 2020) Page • Added cross reference to table note1 ................................................................................................................4 • Added VDDx power-up delay typ and max values ............................................................................................ 8 • Changed DT pin configuration recommendations ........................................................................................... 21 • Added update to bootstrap circuit recommendations....................................................................................... 24 • Added update to gate resistor selection recommendations .............................................................................25 • Added gate to source resistor recommendation .............................................................................................. 26 • Added update to Cboot selection recommendations ....................................................................................... 28 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 5 Description (continued) Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21520 and the UCC21520A enable high efficiency, high power density, and robustness in a wide variety of power applications. 6 Pin Configuration and Functions INA 1 16 VDDA INB 2 15 OUTA VCCI 3 14 VSSA GND 4 13 NC DISABLE 5 12 NC DT 6 11 VDDB NC 7 10 OUTB VCCI 8 9 VSSB Not to scale Figure 6-1. DW Package 16-Pin SOIC Top View Table 6-1. Pin Functions PIN NAME DISABLE NO. 5 TYPE(1) DESCRIPTION I Disables both driver outputs if asserted high, enables if set low or left open. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. Bypass using a ≈1nF low ESR/ESL capacitor close to DIS pin when connecting to a micro controller with distance. DT 6 I Programmable dead time function. Tying DT to VCCI allows the outputs to overlap. Placing a 500-Ω to 500-kΩ resistor (RDT) between DT and GND adjusts dead time according to: DT (in ns) = 10 x RDT (in kΩ). It is recommended to parallel a ceramic capacitor, 2.2 nF or above, close to the DT pin with RDT to achieve better noise immunity. It is not recommended to leave DT floating. GND 4 P Primary-side ground reference. All signals in the primary side are referenced to this ground. INA 1 I Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. INB 2 I Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. It is recommended to tie this pin to ground if not used to achieve better noise immunity. NC 7 – No Internal connection. NC 12 – No internal connection. NC 13 – No internal connection. OUTA 15 O Output of driver A. Connect to the gate of the A channel FET or IGBT. OUTB 10 O Output of driver B. Connect to the gate of the B channel FET or IGBT. VCCI 3 P Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible. VCCI 8 P Primary-side supply voltage. This pin is internally shorted to pin 3. VDDA 16 P Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible. VDDB 11 P Secondary-side power for driver B. Locally decoupled to VSSB using low ESR/ESL capacitor located as close to the device as possible. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A 3 UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 Table 6-1. Pin Functions (continued) PIN TYPE(1) DESCRIPTION NAME NO. VSSA 14 P Ground for secondary-side driver A. Ground reference for secondary side A channel. VSSB 9 P Ground for secondary-side driver B. Ground reference for secondary side B channel. (1) P = Power, G = Ground, I = Input, O = Output 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT Input bias pin supply voltage VCCI to GND –0.3 20 V Driver bias supply VDDA-VSSA, VDDB-VSSB –0.3 30 V OUTA to VSSA, OUTB to VSSB –0.3 VVDDA+0.3, VVDDB+0.3 V OUTA to VSSA, OUTB to VSSB, Transient for 200 ns –2 VVDDA+0.3, VVDDB+0.3 V –0.3 VVCCI+0.3 V –5 VVCCI +0.3 V 1500 V –40 150 °C –65 150 °C Output signal voltage INA, INB, DIS, DT to GND Input signal voltage INA, INB Transient for 50 ns Channel to channel voltage Junction temperature, TJ VSSA-VSSB, VSSB-VSSA (2) Storage temperature, Tstg (1) (2) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. To maintain the recommended operating conditions for TJ, see the Section 7.4. 7.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC V(ESD) (1) (2) Electrostatic discharge JS-001(1) UNIT ±4000 Charged-device model (CDM), per JEDEC specification JESD22C101(2) V ±1500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted) 4 MIN MAX UNIT 3 18 V VCCI VCCI Input supply voltage VDDA, VDDB Driver output bias supply UCC21520ADW – 5-V UVLO version 6.5 25 V VDDA, VDDB Driver output bias supply UCC21520DW – 8-V UVLO version 9.2 25 V TA Ambient Temperature –40 125 °C TJ Junction Temperature –40 130 °C Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 7.4 Thermal Information UCC21520, UCC21520A THERMAL METRIC(1) UNIT DW-16 (SOIC) RθJA Junction-to-ambient thermal resistance 67.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 34.4 °C/W RθJB Junction-to-board thermal resistance 32.1 °C/W ψJT Junction-to-top characterization parameter 18.0 °C/W ψJB Junction-to-board characterization parameter 31.6 °C/W (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics Application Report. 7.5 Power Ratings PD Power dissipation by UCC21520 or UCC21520A PDI Power dissipation by transmitter side of UCC21520 or UCC21520A PDA, PDB Power dissipation by each driver side of UCC21520 or UCC21520A VCCI = 18 V, VDDA/B = 12 V, INA/B = 3.3 V, 3 MHz 50% duty cycle square wave 1-nF load VALUE UNIT 1.05 W 0.05 W 0.5 W 7.6 Insulation Specifications PARAMETER clearance(1) TEST CONDITIONS VALUE UNIT CLR External Shortest pin-to-pin distance through air >8 mm CPG External creepage(1) Shortest pin-to-pin distance across the package surface >8 mm DTI Distance through insulation Minimum internal gap (internal clearance) of the double insulation (2 × 10.5 µm) >21 µm CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 > 600 V Material group According to IEC 60664-1 Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS I-IV Rated mains voltage ≤ 1000 VRMS I-III I DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01(2) VIORM Maximum repetitive peak isolation voltage VIOWM Maximum working isolation voltage VIOTM Maximum transient isolation voltage VIOSM Maximum surge isolation voltage(3) qpd Apparent charge(4) AC voltage (bipolar) 2121 VPK AC voltage (sine wave); time dependent dielectric breakdown (TDDB), test (see Figure 7-1) 1500 VRMS DC voltage 2121 VDC VTEST = VIOTM, t = 60 sec (qualification) VTEST = 1.2 × VIOTM, t = 1 s (100% production) 8000 VPK Test method per IEC 62368-1, 1.2/50 µs waveform, VTEST = 1.6 × VIOSM = 12800 VPK (qualification) 8000 VPK Method a, After Input/Output safety test subgroup 2/3. Vini = VIOTM, tini = 60s; Vpd(m) = 1.2 X VIORM = 2545 VPK, tm = 10s Ω 109 Pollution degree 2 Climatic category 40/125/21 UL 1577 VISO (1) (2) (3) (4) (5) Withstand isolation voltage VTEST = VISO = 5700 VRMS, t = 60 sec. (qualification), VTEST = 1.2 × VISO = 6840VRMS, t = 1 sec (100% production) 5700 VRMS Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications. This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier. Apparent charge is electrical discharge caused by a partial discharge (pd). All pins on each side of the barrier tied together creating a two-pin device. 7.7 Safety-Related Certifications VDE CSA Certified according to DIN V VDE V 0884-11:2017-01, Certified according to IEC 60950-1, IEC and DIN EN 60950-1 (VDE 0805 Teil 62368-1, IEC 61010-1 and IEC 60601-1 1):2014-08 UL CQC Recognized under UL 1577 Component Recognition Program Certified according to GB 4943.1-2011 Reinforced Insulation Maximum Transient Isolation voltage, 8000 VPK; Maximum Repetitive Peak Isolation Voltage, 2121 VPK; Maximum Surge Isolation Voltage, 8000 VPK Reinforced insulation per CSA 60950-1-07+A1+A2 and IEC 60950-1 2nd Ed.+A1+A2, 800 VRMS maximum working voltage (pollution degree 2, material group I) Reinforced insulation per CSA 62368-1-14 and IEC 62368-1 2nd Ed., 800 VRMS maximum working voltage (pollution degree Single protection, 5700 2, material group I); VRMS Basic insulation per CSA 61010-1-12+A1 and IEC 61010-1 3rd Ed., 600 VRMS maximum working voltage (pollution degree 2, material group III); 2 MOPP (Means of Patient Protection) per CSA 60601- 1:14 and IEC 60601-1 Ed.3+A1, 250 VRMS maximum working voltage Reinforced Insulation, Altitude ≤ 5000 m, Tropical Climate 660 VRMS maximum working voltage Certification number: 40040142 Master contract number : 220991 Certificate number: CQC16001155011 File number: E181974 7.8 Safety-Limiting Values Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. PARAMETER IS 6 Safety output supply current TEST CONDITIONS SIDE MIN TYP MAX UNIT RθJA = 67.3°C/W, VDDA/B = 12 V, TA = 25°C, TJ = 150°C See Figure 7-2. DRIVER A, DRIVER B 75 mA RθJA = 67.3°C/W, VDDA/B = 25 V, TA = 25°C, TJ = 150°C See Figure 7-2. DRIVER A, DRIVER B 36 mA Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 7.8 Safety-Limiting Values (continued) Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. PARAMETER PS Safety supply power TS Safety temperature(1) (1) TEST CONDITIONS RθJA = 67.3°C/W, TA = 25°C, TJ = 150°C See Figure 7-3. SIDE MIN TYP MAX INPUT 50 DRIVER A 900 DRIVER B 900 TOTAL 1850 150 UNIT mW °C The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RθJA, in the Section 7.4 table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter: TJ = TA + RθJA × P, where P is the power dissipated in the device. TJ(max) = TS = TA + RθJA × PS , where TJ(max) is the maximum allowed junction temperature. PS = IS × VI , where VI is the maximum input voltage. 7.9 Electrical Characteristics VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENTS IVCCI VCCI quiescent current VINA = 0 V, VINB = 0 V 1.5 2.0 mA IVDDA, IVDDB VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 1.8 mA IVCCI VCCI operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.0 mA IVDDA, IVDDB VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.5 mA VCCI UVLO THRESHOLDS VVCCI_ON Rising threshold 2.55 2.7 2.85 V VVCCI_OFF Falling threshold VCCI_OFF 2.35 2.5 2.65 V VVCCI_HYS Threshold hysteresis 0.2 V UCC21520ADW VDD UVLO THRESHOLDS (5-V UVLO Version) VVDDA_ON, VVDDB_ON Rising threshold VDDA_ON, VDDB_ON 5.7 6.0 6.3 V VVDDA_OFF, VVDDB_OFF Falling threshold VDDA_OFF, VDDB_OFF 5.4 5.7 6 V VVDDA_HYS, VVDDB_HYS Threshold hysteresis 0.3 V UCC21520DW VDD UVLO THRESHOLDS (8-V UVLO Version) VVDDA_ON, VVDDB_ON Rising threshold VDDA_ON, VDDB_ON 8.3 8.7 9.2 V VVDDA_OFF, VVDDB_OFF Falling threshold VDDA_OFF, VDDB_OFF 7.8 8.2 8.7 V VVDDA_HYS, VVDDB_HYS Threshold hysteresis 0.5 V INA, INB AND DISABLE VINAH, VINBH, VDISH Input high voltage 1.6 1.8 2 V Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A 7 UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 7.9 Electrical Characteristics (continued) VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted) PARAMETER TEST CONDITIONS VINAL, VINBL, VDISL Input low voltage VINA_HYS, VINB_HYS, VDIS_HYS Input hysteresis VINA, VINB Negative transient, ref to GND, 50 ns Not production tested, bench test pulse only MIN TYP MAX 0.8 1 1.2 0.8 UNIT V V –5 V OUTPUT IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A ROHA, ROHB Output resistance at high state IOUT = –10 mA, TA = 25°C, ROHA, ROHB do not represent drive pull-up performance. See tRISE in Section 7.10 and Section 9.3.4 for details. 5 Ω ROLA, ROLB Output resistance at low state IOUT = 10 mA, TA = 25°C 0.55 Ω VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 12 V, IOUT = –10 mA, TA = 25°C 11.95 V VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 12 V, IOUT = 10 mA, TA = 25°C 5.5 mV DEADTIME AND OVERLAP PROGRAMMING Pull DT pin to VCCI Overlap determined by INA INB DT pin is left open, min spec characterized only, tested for outliers Dead time RDT = 20 kΩ 0 160 - 8 15 ns 200 240 ns 7.10 Switching Characteristics VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted). PARAMETER TEST CONDITIONS TYP MAX UNIT 6 16 ns 7 12 ns 20 ns tRISE Output rise time, 20% to 80% measured points COUT = 1.8 nF tFALL Output fall time, 90% to 10% measured points COUT = 1.8 nF tPWmin Minimum pulse width tPDHL Propagation delay from INx to OUTx falling edges 14 19 30 ns tPDLH Propagation delay from INx to OUTx rising edges 14 19 30 ns tPWD Pulse width distortion |tPDLH – tPDHL| 6 ns tDM Propagation delays matching between VOUTA, VOUTB 5 ns 100 us Output off for less than minimum, COUT = 0 pF f = 100 kHz tVDD+ to OUT VDDA, VDDB Power-up Delay Time: UVLO Rise to OUTA, OUTB. See INA or INB tied to VCCI Figure 8-6 8 MIN Submit Document Feedback 50 Copyright © 2021 Texas Instruments Incorporated Product Folder Links: UCC21520 UCC21520A UCC21520, UCC21520A www.ti.com SLUSCJ9E – JUNE 2016 – REVISED DECEMBER 2021 VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted). PARAMETER TEST CONDITIONS MIN |CMH| High-level common-mode transient immunity INA and INB both are tied to VCCI; VCM=1500V; (See Section 8.6) 100 |CML| Low-level common-mode transient immunity INA and INB both are tied to GND; VCM=1500V; (See Section 8.6) 100 TYP MAX UNIT V/ns 7.11 Insulation Characteristics Curves 1.E+11 1.E+10 Safety Margin Zone: 1800 VRMS, 254 Years Operating Zone: 1500 VRMS, 135 Years TDDB Line (
UCC21520DW 价格&库存

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