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UCC27200, UCC27201
SLUS746C – DECEMBER 2006 – REVISED APRIL 2016
UCC2720x, 120-V Boot, 3-A Peak, High Frequency, High-Side and Low-Side Driver
1 Features
3 Description
•
The UCC2720x family of high-frequency N-channel
MOSFET drivers include a 120-V bootstrap diode and
high-side and low-side drivers with independent
inputs for maximum control flexibility. This allows for
N-channel MOSFET control in half-bridge, full-bridge,
two-switch forward, and active clamp forward
converters. The low-side and the high-side gate
drivers are independently controlled and matched to
1 ns between the turnon and turnoff of each other.
1
•
•
•
•
•
•
•
•
•
•
•
Drives Two N-Channel MOSFETs in High-Side
and Low-Side Configuration
Negative Voltage Handling on HS (–5 V)
Maximum Boot Voltage of 120 V
Maximum VDD Voltage of 20 V
On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
Greater than 1 MHz of Operation
20-ns Propagation Delay Times
3-A Sink and 3-A Source Output Currents
8-ns Rise and 7-ns Fall Time With 1000-pF Load
1-ns Delay Matching
Undervoltage Lockout for High-Side and Low-Side
Driver
Specified from –40°C to 140°C
2 Applications
•
•
•
•
•
•
•
Power Supplies for Telecom, Datacom, and
Merchant Markets
Half-Bridge Applications and Full-Bridge
Converters
Isolated Bus Architecture
Two-Switch Forward Converters
Active-Clamp Forward Converters
High-Voltage Synchronous-Buck Converters
Class-D Audio Amplifiers
An on-chip bootstrap diode eliminates the external
discrete diodes. Undervoltage lockout is provided for
both the high-side and the low-side drivers forcing the
outputs low if the drive voltage is below the specified
threshold.
Two versions of the UCC27200 are offered. The
UCC27200 has high noise immune CMOS input
thresholds while the UCC27201 has TTL compatible
thresholds.
Device Information(1)
PART NUMBER
UCC2720x
PACKAGE
BODY SIZE (NOM)
SOIC (8)
3.91 mm × 4.90 mm
SO PowerPAD™ (8)
3.90 mm × 4.89 mm
VSON (8)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application Diagram
12 V
100 V
VDD
Secondary
Side
Circuit
HB
HI
LI
Control
PWM
Controller
Drive
High
HO
HS
Drive
Low
LO
UCC2720x
VSS
Copyright © 2016, Texas Instruments Incorporated
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Feedback
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC27200, UCC27201
SLUS746C – DECEMBER 2006 – REVISED APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
5
5
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 12
7.4 Device Functional Modes........................................ 13
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application .................................................. 15
9 Power Supply Recommendations...................... 20
10 Layout................................................................... 21
10.1 Layout Guidelines ................................................. 21
10.2 Layout Example .................................................... 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
12 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (November 2008) to Revision C
•
2
Page
Added Device Information table, Revision History section, Pin Configuration and Functions section, Specifications
section, Detailed Description section, Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................. 1
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SLUS746C – DECEMBER 2006 – REVISED APRIL 2016
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
VDD
1
DDA Package
8-Pin SO PowerPAD
Top View
8
LO
HB
2
7
VSS
HO
3
6
LI
HS
4
5
HI
VDD
1
HB
2
8
LO
7
VSS
PAD
HO
3
6
LI
HS
4
5
HI
DRM Package
8-Pin VSON
Top View
VDD
1
HB
2
8
LO
7
VSS
PAD
HO
3
6
LI
HS
4
5
HI
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
I
High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required.
Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is
0.022 μF to 0.1 μF, the value is dependant on the gate charge of the high-side MOSFET however.
5
I
High-side input.
3
O
High-side output. Connect to the gate of the high-side power MOSFET.
HS
4
I
High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of
bootstrap capacitor to this pin.
LI
6
I
Low-side input.
LO
8
O
Low-side output. Connect to the gate of the low-side power MOSFET.
VDD
1
I
Positive supply to the lower gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor
range is 0.22 μF to 1 μF.
VSS
7
O
Negative supply terminal for the device which is generally grounded.
PAD
—
Used on the DDA and DRM packages only. Electrically referenced to VSS (GND) (1). Connect to a large
thermal mass trace or GND plane to dramatically improve thermal performance.
HB
2
HI
HO
PowerPAD
(1)
VSS pin and the exposed thermal die pad are internally connected.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature, unless noted, all voltages are with respect to VSS. (1)
MIN
MAX
UNIT
–0.3
20
V
–0.3
20
V
–0.3
VDD + 0.3
–2
VDD + 0.3
VHS – 0.3
VHB + 0.3
VHS – 2
VHB + 0.3
–1
120
–5
120
Voltage on HB, VHB
–0.3
120
V
Voltage on HB-HS
–0.3
20
V
Supply voltage, VDD (2)
Input voltages on LI and HI, VLI, VHI
DC
Output voltage on LO, VLO
Repetitive pulse < 100 ns (3)
DC
Output voltage on HO, VHO
Repetitive pulse < 100 ns (3)
DC
Voltage on HS, VHS
Repetitive pulse < 100 ns
Power dissipation at TA = 25°C
(3)
(D package) (4)
1.3
(DDA package) (4)
2.7
(DRM package) (4)
3.3
Lead temperature (soldering, 10 s)
V
V
V
W
300
°C
Operating virtual junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
(2)
(3)
(4)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to Vss. Currents are positive into, negative out of the specified terminal.
Values are verified by characterization and are not production tested.
This data was taken using the JEDEC proposed high-K test PCB. See Thermal Information for details.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VDD
Supply voltage
VHS
Voltage on HS
VHB
Voltage on HB
repetitive pulse < 100 ns
MIN
NOM
MAX
8
12
17
4
Operating junction temperature
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V
–1
105
–5
110
VHS + 8
115
V
50
V/ns
–40
140
°C
Voltage slew rate on HS
TJ
UNIT
V
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SLUS746C – DECEMBER 2006 – REVISED APRIL 2016
6.4 Thermal Information
PDISS = (150 – TA) / θJA, unless otherwise noted.
UCC27200, UCC27201
THERMAL METRIC
(1)
D (SOIC)
DDA (HSOP)
DRM (VSON)
8 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
106.5
40.5
36.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
52.9
49
41.6
°C/W
RθJB
Junction-to-board thermal resistance
46.6
10.2
13.2
°C/W
ψJT
Junction-to-top characterization parameter
9.6
3.1
0.6
°C/W
ψJB
Junction-to-board characterization parameter
46.1
9.7
13.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
1.5
3.1
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range, VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to
140°C, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENTS
IDD
VDD quiescent current
VLI = VHI = 0
0.4
0.8
UCC27200
2.5
4
UCC27201
IDDO
VDD operating current
f = 500 kHz, CLOAD = 0
3.8
5.5
IHB
Boot voltage quiescent current
VLI = VHI = 0 V
0.4
0.8
IHBO
Boot voltage operating current
f = 500 kHz, CLOAD = 0
2.5
4
IHBS
HB to VSS quiescent current
VHS = VHB = 110 V
0.0005
1
IHBSO
HB to VSS operating current
f = 500 kHz, CLOAD = 0
0.1
mA
uA
mA
INPUT
VHIT
Input rising threshold
5.8
VLIT
Input falling threshold
VIHYS
Input voltage hysteresis
0.4
VHIT
Input voltage threshold
1.7
VLIT
Input voltage threshold
VIHYS
Input voltage Hysteresis
RIN
Input pulldown resistance
UCC27200
UCC27201
3
0.8
8
5.4
V
2.5
1.6
100
mV
100
200
350
6.2
7.1
7.8
kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VDD rising threshold
VDD threshold hysteresis
0.5
VHB rising threshold
5.8
6.7
7.2
VHB threshold hysteresis
0.4
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Electrical Characteristics (continued)
over operating free-air temperature range, VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to
140°C, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOTSTRAP DIODE
VF
Low-current forward voltage
I VDD – HB = 100 μA
0.65
0.85
VFI
High-current forward voltage
I VDD – HB = 100 mA
0.85
1.1
RD
Dynamic resistance, ΔVF / ΔI
I VDD – HB = 100 mA and 80 mA
0.6
1
0.18
0.4
V
Ω
LO GATE DRIVER
VLOL
VLOH
Low-level output voltage
ILO = 100 mA
TJ = –40 to 125°C
0.25
0.4
TJ = –40 to 140°C
0.25
0.42
High-level output voltage
ILO = –100 mA,
VLOH = VDD – VLO
Peak pullup current
VLO = 0 V
3
Peak pulldown current
VLO = 12 V
3
V
A
HO GATE DRIVER
VHOL
VHOH
Low-level output voltage
IHO = 100 mA
High-level output voltage
IHO = –100 mA,
VHOH = VHB – VHO
0.18
Peak pullup current
VHO = 0 V
3
Peak pulldown current
VHO = 12 V
3
0.4
TJ = –40 to 125°C
0.25
0.4
TJ = –40 to 140°C
0.25
0.42
V
A
PROPAGATION DELAYS
TDLFF
VLI falling to VLO falling
CLOAD = 0
TDHFF
VHI falling to VHO falling
CLOAD = 0
TDLRR
VLI rising to VLO rising
CLOAD = 0
TDHRR
VHI rising to VHO rising
CLOAD = 0
TJ = –40 to 125°C
20
45
TJ = –40 to 140°C
20
50
TJ = –40 to 125°C
20
45
TJ = –40 to 140°C
20
50
TJ = –40 to 125°C
20
45
TJ = –40 to 140°C
20
50
TJ = –40 to 125°C
20
45
TJ = –40 to 140°C
20
50
ns
DELAY MATCHING
TMON
LI ON, HI OFF
1
7
TMOFF
LI OFF, HI ON
1
7
ns
OUTPUT RISE AND FALL TIME
tR
LO, HO
CLOAD = 1000 pF
8
tF
LO, HO
CLOAD = 1000 pF
7
tR
LO, HO (3 V to 9 V)
CLOAD = 0.1 μF
0.35
0.6
tF
LO, HO (3 V to 9 V)
CLOAD = 0.1 μF
0.3
0.6
ns
us
MISCELLANEOUS
Minimum input pulse width that
changes the output
Bootstrap diode turn-off time
(1)
(2)
6
50
IF = 20 mA, IREV = 0.5 A
(1) (2)
ns
20
Typical values for TA = 25°C
IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.
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SLUS746C – DECEMBER 2006 – REVISED APRIL 2016
LI
Input
(HI, LI)
HI
TDLRR, TDHRR
LO
Output
(HO, LO)
TDLFF, TDHFF
HO
TMON
TMOFF
Figure 1. Timing Diagrams
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6.6 Typical Characteristics
10.0
10.0
VDD = 12 V
No Load on Outputs
VDD = 12 V
No Load on Outputs
150oC
IDDO - Operating Current - mA
IDDO - Operating Current - mA
25oC
150oC
125oC
1.0
o
25 C
-40oC
0.1
o
125 C
1.0
-40oC
0.1
100
10
1000
100
10
Frequency - kHz
Figure 2. UCC27200 IDD Operating Current vs Frequency
Figure 3. UCC27201 IDD Operating Current vs Frequency
10.0
1.0
HB = 12 V
No Load on Outputs
IHBSO - Operating Current - mA
HB = 12 V
No Load on Outputs
IHBO - Operating Current - mA
1000
Frequency - kHz
150oC
125oC
1.0
25oC
-40oC
0.1
150oC
0.01
25oC
125oC
o
0.1
-40 C
0.001
100
10
1000
100
10
Frequency - kHz
Figure 4. Boot Voltage Operating Current vs Frequency
Figure 5. HB to VSS Operating Current vs Frequency
2.0
T = 25oC
T = 25oC
HI, LI - Input Threshold Voltage - V
HI, LI - Input Threshold Voltage/VDD Voltage - %
50
Rising
48
46
Falling
44
42
40
1.8
Rising
Falling
1.6
1.4
1.2
1.0
8
10
12
14
16
18
20
8
10
Figure 6. UCC27200 Input Threshold vs Supply Voltage
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12
14
16
18
20
VDD - Supply Voltage - V
VDD - Supply Voltage - V
8
1000
Frequency - kHz
Figure 7. UCC27201 Input Threshold vs Supply Voltage
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Typical Characteristics (continued)
2.0
VDD = 12 V
VDD = 12 V
HI, LI - Input Threshold Voltage - V
HI, LI - Input Threshold Voltage/VDD Voltage - %
50
48
Rising
46
Falling
44
42
40
1.8
Rising
1.6
Falling
1.4
1.2
1.0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
TA - Temperature - oC
Figure 8. UCC27200 Input Threshold vs Temperature
75
100
125
150
0.45
ILO = IHO = -100 mA
0.35
VDD = VHB = 16 V
VDD = VHB = 12 V
0.30
VDD = VHB = 8 V
0.25
0.20
0.15
0.10
VDD = VHB = 20 V
0.35
VDD = VHB = 16 V
0.30
VDD = VHB = 12 V
0.25
VDD = VHB = 8 V
0.20
0.15
0.10
0.05
0.05
0.0
0.0
-50
-25
0
25
50
75
100
ILO = IHO = 100 mA
0.40
VOL - LO/HO Output Voltage - V
VOH - LO/HO Output Voltage - V
50
Figure 9. UCC27201 Input Threshold vs Temperature
0.45
0.40
25
TA - Temperature - oC
125
150
VDD = VHB = 20 V
-50
-25
0
TA - Temperature - oC
25
50
75
100
125
150
TA - Temperature - oC
Figure 10. LO and HO High-Level Output Voltage vs
Temperature
Figure 11. LO and HO Low-Level Output Voltage vs
Temperature
7.8
0.8
7.6
0.7
7.4
Hysteresis - V
Threshold - V
0.6
VDD Rising Threshold
7.2
7.0
6.8
6.6
VDD UVLO Hysteresis
0.5
0.4
HB UVLO Hysteresis
0.3
HB Rising Threshold
6.4
0.2
6.2
0.1
6.0
5.8
0
-50
-25
0
25
50
75
100
125
150
-50
-25
TA - Temperature - oC
0
25
50
75
100
125
150
TA - Temperature - oC
Figure 12. Undervoltage Lockout Threshold vs Temperature
Figure 13. Undervoltage Lockout Threshold Hysteresis vs
Temperature
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Typical Characteristics (continued)
36
36
VDD = VHD = 12 V
34
32
30
TDHRR
28
26
24
22
20
Propagation Delay - ns
32
Propagation Delay - ns
VDD = VHB = 12 V
34
TDHFF
TDLFF
18
30
28
26
24
22
TDLFF
TDLRR
20
18
16
TDHFF
16
TDHRR
TDLRR
14
14
-50
-25
0
50
75
25
100
TA - Temperature - oC
125
-50
150
-25
0
25
50
75
100
125
150
TA - Temperature - oC
Figure 14. UCC27200 Propagation Delays vs Temperature
Figure 15. UCC27201 Propagation Delays vs Temperature
26
26
T = 25oC
T = 25oC
24
Propagation Delay - ns
Propagation Delay - ns
24
22
LI Falling
20
LI Rising
HI Falling
LI Falling
22
LI Rising
20
HI Rising
HI Rising
18
HI Falling
16
18
8
10
12
16
14
18
20
8
10
VDD = VHB - Supply Voltage - V
12
14
16
18
20
VDD = VHB - Supply Voltage - V
Figure 16. UCC27200 Propagation Delay vs Supply Voltage
Figure 17. UCC27201 Propagation Delay vs Supply Voltage
3.5
7
VDD = VHB = 12 V
VDD = VHB = 12 V
3.0
Delay Matching - ns
5
4
UCC27200TMOFF
3
UCC27201TMOFF
UCC27201TMON
UCC27200TMON
2
ILO, IHO - Output Current - A
6
2.5
2.0
1.5
1.0
0.5
1
0
0
-50
-25
0
25
50
75
100
125
150
0
2
Figure 18. Delay Matching vs Temperature
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4
6
8
10
12
VLO, VHO - Output Voltage - V
TA - Temperature - oC
10
Pull-Down Current
Pull-Up Current
Figure 19. Output Current vs Output Voltage
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Typical Characteristics (continued)
700
100.0
Inputs Low
T = 25oC
600
IDD, IHB - Supply Current - mA
Diode Current - mA
10.0
1.0
0.1
500
IHB
400
300
IDD
200
0.01
100
0.001
0
0.5
0.6
0.7
0.8
0.9
0
Diode Voltage - V
4
8
12
16
20
VDD, VHB - Supply Voltage - V
Figure 20. Diode Current vs Diode Voltage
Figure 21. Quiescent Current vs Supply Voltage
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7 Detailed Description
7.1 Overview
The UCC27200 and UCC27201 are high-side and low-side drivers. The high-side and low-side each have
independent inputs which allow maximum flexibility of input control signals in the application. The boot diode for
the high-side driver bias supply is internal to the UCC27200 and UCC27201. The UCC27200 is the CMOS
compatible input version and the UCC27201 is the TTL or logic compatible version. The high-side driver is
referenced to the switch node (HS) which is typically the source pin of the high-side MOSFET and drain pin of
the low-side MOSFET. The low-side driver is referenced to VSS which is typically ground. The functions
contained are the input stages, UVLO protection, level shift, boot diode, and output driver stages.
7.2 Functional Block Diagram
2
HB
3
HO
4
HS
8
LO
7
VSS
UVLO
Level
Shift
HI
5
VDD
1
UVLO
LI
6
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7.3 Feature Description
7.3.1 Input Stages
The input stages provide the interface to the PWM output signals. The input impedance of the UCC27200 is
200‑kΩ nominal and input capacitance is approximately 2 pF. The 200 kΩ is a pulldown resistance to VSS
(ground). The CMOS compatible input of the UCC27200 provides a rising threshold of 48% of VDD and falling
threshold of 45% of VDD. The inputs of the UCC27200 are intended to be driven from 0 to VDD levels.
The input stages of the UCC27201 incorporate an open drain configuration to provide the lower input thresholds.
The input impedance is 200-kΩ nominal and input capacitance is approximately 4 pF. The 200 kΩ is a pulldown
resistance to VSS (ground). The logic level compatible input provides a rising threshold of 1.7 V and a falling
threshold of 1.6 V.
7.3.2 Undervoltage Lockout (UVLO)
The bias supplies for the high-side and low-side drivers have undervoltage lockout (UVLO) protection. VDD as
well as VHB to VHS differential voltages are monitored. The VDD UVLO disables both drivers when VDD is
below the specified threshold. The rising VDD threshold is 7.1 V with 0.5-V hysteresis. The VHB UVLO disables
only the high-side driver when the VHB to VHS differential voltage is below the specified threshold. The VHB
UVLO rising threshold is 6.7 V with 0.4-V hysteresis.
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Feature Description (continued)
7.3.3 Level Shift
The level shift circuit is the interface from the high-side input to the high-side driver stage which is referenced to
the switch node (HS). The level shift allows control of the HO output referenced to the HS pin and provides
excellent delay matching with the low-side driver.
7.3.4 Boot Diode
The boot diode necessary to generate the high-side bias is included in the UCC2720x family of drivers. The
diode anode is connected to VDD and cathode connected to VHB. With the VHB capacitor connected to HB and
the HS pins, the VHB capacitor charge is refreshed every switching cycle when HS transitions to ground. The
boot diode provides fast recovery times, low diode resistance, and voltage rating margin to allow for efficient and
reliable operation.
7.3.5 Output Stages
The output stages are the interface to the power MOSFETs in the power train. High slew rate, low resistance and
high peak current capability of both output drivers allow for efficient switching of the power MOSFETs. The lowside output stage is referenced from VDD to VSS and the high-side is referenced from VHB to VHS.
7.4 Device Functional Modes
The device operates in normal mode and UVLO mode. See Undervoltage Lockout (UVLO) for more information
on UVLO operation mode. In normal mode, the output stage is dependent on the sates of the HI and LI pins.
Table 1. Device Logic Table
LI PIN
HO (1)
L
L
L
L
L
H
L
H
H
L
H
L
H
H
H
H
HI PIN
(1)
(2)
LO (2)
HO is measured with respect to the HS.
LO is measured with respect to the VSS.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
To effect fast switching of power devices and reduce associated switching power losses, a powerful gate driver is
employed between the PWM output of controllers and the gates of the power semiconductor devices. Also, gate
drivers are indispensable when it is impossible for the PWM controller to directly drive the gates of the switching
devices. With the advent of digital power, this situation is often encountered because the PWM signal from the
digital controller is often a 3.3-V logic signal which cannot effectively turn on a power switch. Level shifting
circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) to fully turn on the power
device and minimize conduction losses. Traditional buffer drive circuits based on NPN and PNP bipolar
transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate with digital power
because they lack level-shifting capability. Gate drivers effectively combine both the level-shifting and buffer-drive
functions. Gate drivers also find other needs such as minimizing the effect of high-frequency switching noise by
locating the high-current driver physically close to the power switch, driving gate-drive transformers and
controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving
gate charge power losses from the controller into the driver.
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8.2 Typical Application
+
+
+
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Figure 22. Open-Loop Half-Bridge Converter
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8.2.1 Design Requirements
For this design example, use the parameters listed in Table 2.
Table 2. UCC27201 Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
Supply Voltage, VDD
12 V
Voltage on HS, VHS
0 V to 100 V
Voltage on HB, VHB
12 V to 112 V
Output
4 V, 20 A
Frequency
200 kHz
8.2.2 Detailed Design Procedure
8.2.2.1 Switching the MOSFETs
Achieving optimum drive performance at high frequency efficiently requires special attention to layout and
minimizing parasitic inductances. Take care at the driver die and package level as well as the PCB layout to
reduce parasitic inductances as much as possible. Figure 23 shows the main parasitic inductance elements and
current flow paths during the turn ON and OFF of the MOSFET by charging and discharging its CGS
capacitance.
L bond wire
L pin
1
VDD
I SOURCE
Rsource
Driver
Output
Stage
L trace
Cvdd
L pin L trace
L bond wire
8
Rg
LO
I sink
Rsink
L pin L trace
L bond wire
7
L trace
Cgs
Vss
Figure 23. MOSFET Drive Paths and Circuit Parasitics
The ISOURCE current charges the CGS gate capacitor and the ISINK current discharges it. The rise and fall time of
the voltage across the gate to source defines how quickly the MOSFET can be switched. Based on actual
measurements, the analytical curves in Figure 24 and Figure 25 indicate the output voltage and current of the
drivers during the discharge of the load capacitor. Figure 24 shows voltage and current as a function of time.
Figure 25 indicates the relationship of voltage and current during fast switching. These figures demonstrate the
actual switching process and limitations due to parasitic inductances.
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12
11
12
11
10
10
9
8
9
6
8
5
7
4
LO Voltage, V
LO Falling, V or A
7
3
2
1
0
1
2
5
4
3
2
3
4
5
6
1
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
t, ns
1
2
Voltage
3
Current
2
1
0
1
2
3
4
5
LO Current, A
Figure 24. Turnoff Voltage and Current vs Time
Figure 25. Turnoff Voltage and Current Switching Diagram
Turning off the MOSFET must be achieved as fast as possible to minimize switching losses. For this reason the
UCC2720x drivers are designed for high peak currents and low output resistance. The sink capability is specified
as 0.18 V at 100-mA DC current implying 1.8-Ω RDS(on). With 12-V drive voltage, no parasitic inductance and a
linear resistance, one would expect initial sink current amplitude of 6.7 A for both high-side and low-side drivers.
Assuming a pure R-C discharge circuit of the gate capacitor, one would expect the voltage and current
waveforms to be exponential. Due to the parasitic inductances and non-linear resistance of the driver
MOSFET’S, the actual waveforms have some ringing and the peak-sink current of the drivers is approximately
3.3 A as shown in Figure 19. The overall parasitic inductance of the drive circuit is estimated at 4 nH. The
internal parasitic inductance of the 8-pin SOIC package is estimated to be 2 nH including bond wires and leads.
The 8-pin VSON package reduces the internal parasitic inductances by more than 50%.
Actual measured waveforms are shown in Figure 26 and Figure 27. As shown, the typical rise time of 8 ns and
fall time of 7 ns is conservatively rated.
Figure 26. VLO and VHO Rise Time, 1-nF Load, 5 ns/Div
Figure 27. VLO and VHO Fall Time, 1-nF Load, 5-ns/Div
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8.2.2.2 Dynamic Switching of the MOSFETs
The true behavior of MOSFETS presents a dynamic capacitive load primarily at the gate to source threshold
voltage. Using the turnoff case as the example, when the gate to source threshold voltage is reached the drain
voltage starts rising, the drain to gate parasitic capacitance couples charge into the gate resulting in the turnoff
plateau. The relatively low threshold voltages of many MOSFETS and the increased charge that has to be
removed (Miller charge) makes good driver performance necessary for efficient switching. An open-loop half
bridge power converter was used to evaluate performance in actual applications. The schematic of the halfbridge converter is shown in Figure 22. The turnoff waveforms of the UCC27200 driving two MOSFETs in parallel
is shown in Figure 28 and Figure 29.
Figure 28. VLO Fall Time in Half-Bridge Converter
Figure 29. VHO Fall Time in Half-Bridge Converter
8.2.2.2.1 Delay Matching and Narrow Pulse Widths
The total delays encountered in the PWM, driver and power stage must be considered for a number of reasons,
primarily delay in current limit response. Also to be considered are differences in delays between the drivers
which can lead to various concerns depending on the topology. The sync-buck topology switching requires
careful selection of dead time between the high-side and low-side switches to avoid cross conduction and
excessive body diode conduction. Bridge topologies can be affected by a resulting V/s imbalance on the
transformer if there is imbalance in the high and low-side pulse widths in a steady state condition.
Narrow pulse width performance is an important consideration when transient and short circuit conditions are
encountered. Although there may be relatively long steady state PWM output-driver-MOSFET signals, very
narrow pulses may be encountered in soft start, large load transients, and short-circuit conditions.
The UCC2720x driver family offers excellent performance regarding high and low-side driver delay matching and
narrow pulse width performance. The delay matching waveforms are shown in Figure 30 and Figure 31. The
UCC2720x driver narrow pulse performance is shown in Figure 32 and Figure 33.
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Figure 30. VLO and VHO Rising Edge Delay Matching
Figure 31. VLO and VHO Falling Edge Delay Matching
Figure 32. 20-ns Input Pulse Delay Matching
Figure 33. 10-ns Input Pulse Delay Matching
8.2.2.3 Boot Diode Performance
The UCC2720x family of drivers incorporates the bootstrap diode necessary to generate the high-side bias
internally. The characteristics of this diode are important to achieve efficient, reliable operation. The DC
characteristics to consider are VF and dynamic resistance. A low VF and high dynamic resistance results in a
high forward voltage during charging of the bootstrap capacitor. The UCC2720x has a boot diode rated at 0.65-V
VF and dynamic resistance of 0.6 Ω for reliable charge transfer to the bootstrap capacitor. The dynamic
characteristics to consider are diode recovery time and stored charge. Diode recovery times that are specified
with no conditions can be misleading. Diode recovery times at no forward current (IF) can be noticeably less than
with forward current applied. The UCC2720x boot diode recovery is specified at 20 ns at IF = 20 mA,
IREV = 0.5 A. At 0-mA IF the reverse recovery time is 15 ns.
Another less obvious consideration is how the stored charge of the diode is affected by applied voltage. On every
switching transition when the HS node transitions from low to high, charge is removed from the boot capacitor to
charge the capacitance of the reverse biased diode. This is a portion of the driver power losses and reduces the
voltage on the HB capacitor. At higher applied voltages, the stored charge of the UCC2720x PN diode is often
less than a comparable Schottky diode.
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8.2.3 Application Curves
Figure 34. VLO Fall Time in Half-Bridge Converter
Figure 35. VHO Fall Time in Half-Bridge Converter
9 Power Supply Recommendations
The bias supply voltage range for which the device is rated to operate is from 8 V to 17 V. The lower end of this
range is governed by the internal UVLO protection feature on the VDD pin supply circuit blocks. Whenever the
driver is in UVLO condition when the VDD pin voltage is below the V(ON) supply start threshold, this feature
holds the output low, regardless of the status of the inputs. The upper end of this range is driven by the 20-V
absolute maximum voltage rating of the VDD pin of the device (which is a stress rating). Keeping a 3-V margin to
allow for transient voltage spikes, the maximum voltage for the VDD pin is 17 V. The UVLO protection feature
also involves a hysteresis function. This means that when the VDD pin bias voltage has exceeded the threshold
voltage and device begins to operate, and if the voltage drops, then the device continues to deliver normal
functionality unless the voltage drop exceeds the hysteresis specification VDD(hys). Therefore, ensuring that,
while operating at or near the 8-V range, the voltage ripple on the auxiliary power supply output is smaller than
the hysteresis specification of the device is important to avoid triggering device shutdown. During system
shutdown, the device operation continues until the VDD pin voltage has dropped below the V(OFF) threshold
which must be accounted for while evaluating system shutdown timing design requirements. Likewise, at system
start-up, the device does not begin operation until the VDD pin voltage has exceeded above the V(ON) threshold.
The quiescent current consumed by the internal circuit blocks of the device is supplied through the VDD pin.
Although this fact is well known, recognizing that the charge for source current pulses delivered by the HO pin is
also supplied through the same VDD pin is important. As a result, every time a current is sourced out of the HO
pin a corresponding current pulse is delivered into the device through the VDD pin. Thus ensuring that a local
bypass capacitor is provided between the VDD and GND pins and located as close to the device as possible for
the purpose of decoupling is important. A low ESR, ceramic surface mount capacitor is a must. TI recommends
using a capacitor in the range of 0.22 uF to 4.7 uF between VDD and GND. In a similar manner, the current
pulses delivered by the LO pin are sourced from the HB pin. Therefore, TI recommends a 0.022-uF to 0.1-uF
local decoupling capacitor between the HB and HS pins.
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10 Layout
10.1 Layout Guidelines
To
•
•
•
•
•
•
•
•
improve the switching characteristics and efficiency of a design, the following layout rules must be followed.
Place the driver as close as possible to the MOSFETs.
Place the VDD and VHB (bootstrap) capacitors as close as possible to the driver.
Pay close attention to the GND trace. Use the thermal pad of the DDA and DRM package as GND by
connecting it to the VSS pin (GND). The GND trace from the driver goes directly to the source of the
MOSFET but must not be in the high current path of the MOSFET(s) drain or source current.
Use similar rules for the HS node as for GND for the high-side driver.
Use wide traces for LO and HO closely following the associated GND or HS traces. 60-mil to 100-mil width is
preferable where possible.
Use as least two or more vias if the driver outputs or SW node must be routed from one layer to another. For
GND the number of vias must be a consideration of the thermal pad requirements as well as parasitic
inductance.
Avoid LI and HI (driver input) going close to the HS node or any other high dV/dT traces that can induce
significant noise into the relatively high impedance leads.
Keep in mind that a poor layout can cause a significant drop in efficiency versus a good PCB layout and can
even lead to decreased reliability of the whole system.
10.2 Layout Example
Figure 36. Example Component Placement
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• QFN/SON PCB Attachment, SLUA271
• PowerPAD Thermally Enhanced Package, SLMA002
• PowePAD Made Easy, SLMA004
11.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
UCC27200
Click here
Click here
Click here
Click here
Click here
UCC27201
Click here
Click here
Click here
Click here
Click here
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
UCC27200D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 140
27200
UCC27200DDA
ACTIVE SO PowerPAD
DDA
8
75
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27200
UCC27200DDAR
ACTIVE SO PowerPAD
DDA
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27200
UCC27200DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 140
27200
UCC27200DRMR
ACTIVE
VSON
DRM
8
3000
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 140
27200
UCC27200DRMT
ACTIVE
VSON
DRM
8
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 140
27200
UCC27201D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 140
27201
UCC27201DDA
ACTIVE SO PowerPAD
DDA
8
75
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27201
UCC27201DDAR
ACTIVE SO PowerPAD
DDA
8
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27201
Level-1-260C-UNLIM
-40 to 140
27201
UCC27201DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
UCC27201DRMR
ACTIVE
VSON
DRM
8
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27201
UCC27201DRMT
ACTIVE
VSON
DRM
8
250
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27201
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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