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UCC27528-Q1
SNVSA89A – DECEMBER 2014 – REVISED MAY 2015
UCC27528-Q1 Dual 5-A High-Speed Low-Side Gate Driver Based on
CMOS Input Threshold Logic
1 Features
2 Applications
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Qualified for Automotive Applications
AEC-Q100 Device Temperature Grade 1
Industry-Standard Pin Out
Two Independent Gate-Drive Channels
5-A Peak Source and Sink Drive Current
CMOS Input Logic Threshold
(Function of Supply Voltage on VDD Pins)
Hysteretic Logic Thresholds for High Noise
Immunity
Independent Enable Function for Each Output
Inputs and Enable Pin Voltage Levels Not
Restricted by VDD Pin Bias Supply Voltage
4.5-V to 18-V Single Supply Range
Outputs Held Low During VDD UVLO (Ensures
Glitch-Free Operation at Power Up and Power
Down)
Fast Propagation Delays (17-ns Typical)
Fast Rise and Fall Times (7-ns and 6-ns Typical)
1-ns Typical Delay Matching Between 2 Channels
Outputs Held in Low When Inputs Floating
SOIC-8 Package
Operating Temperature Range of –40°C to 140°C
–5-V Negative Voltage Handling Capability on
Input Pins
Automotive
Switch-Mode Power Supplies
DC-to-DC Converters
Motor Control, Solar Power
Gate Drive for Emerging Wideband Gap Power
Devices Such as GaN
3 Description
The UCC27528-Q1 device is a dual-channel, highspeed, low-side gate driver capable of effectively
driving MOSFET and IGBT power switches. Using a
design that inherently minimizes shoot-through
current, the UCC27528-Q1 device can deliver highpeak current pulses of up to 5-A source and 5-A sink
into capacitive loads along with rail-to-rail drive
capability and extremely small propagation delay of
17 ns (typical). In addition, the drivers feature
matched internal propagation delays between the two
channels which are very well suited for applications
requiring dual-gate drives with critical timing, such as
synchronous rectifiers. The input pin thresholds are
based on CMOS logic, which is a function of the VDD
supply voltage. Wide hysteresis between the high and
low thresholds offers excellent noise immunity. The
enable pins are based on TTL and CMOS compatible
logic, independent of the VDD supply voltage.
Device Information(1)
PART NUMBER
UCC27528-Q1
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Dual Non-Inverting Inputs
UCC27528-Q1
ENA
1
8
ENB
INA
2
7
OUTA
GND
3
6
VDD
INB
4
5
OUTB
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC27528-Q1
SNVSA89A – DECEMBER 2014 – REVISED MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (continued).........................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
4
5
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
8.1 Overview ................................................................. 10
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 11
8.4 Device Functional Modes........................................ 15
9
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Application .................................................. 16
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Example .................................................... 21
11.3 Thermal Considerations ........................................ 21
12 Device and Documentation Support ................. 21
12.1 Trademarks ........................................................... 21
12.2 Electrostatic Discharge Caution ............................ 21
12.3 Glossary ................................................................ 21
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
Changes from Original (December 2015) to Revision A
•
2
Page
Changed device status from Product Preview to Production Data ....................................................................................... 1
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5 Description (continued)
The UCC27528-Q1 device is a dual noninverting driver. Internal pullup and pulldown resistors on the input pins
of the UCC27528-Q1 device ensure that outputs are held low when input pins are in floating condition. The
UCC27528-Q1 device features enable pins (ENA and ENB) for better control of the operation of the driver
applications. The pins are internally pulled up to the VDD supply for active-high logic and can be left open for
standard operation.
6 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
ENA
1
88
ENB
INA
2
77
OUTA
GND
3
66
VDD
INB
4
55
OUTB
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
ENA
I
Enable input for Channel A: ENA biased low Disables Channel A output regardless of INA
state, ENA biased high or floating Enables Channel A output, ENA allowed to float.
2
INA
I
Input to Channel A: Non-Inverting Input in UCC27528-Q1, OUTA held low if INA is unbiased or
floating.
3
GND
—
4
INB
I
Input to Channel B: Non-Inverting Input in UCC27528-Q1, OUTB held low if INB is unbiased or
floating.
5
OUTB
O
Output of Channel B
Ground: All signals referenced to this pin.
6
VDD
I
Bias supply input
7
OUTA
O
Output of Channel A
8
ENB
I
Enable input for Channel B: ENB biased low Disables Channel B output regardless of INB
state, ENB biased high or floating Enables Channel B output, ENB allowed to float.
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7 Specifications
7.1 Absolute Maximum Ratings (1) (2)
over operating free-air temperature range (unless otherwise noted)
Supply voltage range
INA, INB, voltage
VDD
(3)
ENA, ENB voltage (3)
DC
OUTA, OUTB voltage
Repetitive pulse < 200 ns (4)
Output continuous source and sink
current
IOUT_DC
Output pulsed source and sink
current (0.5 µs)
IOUT_pulsed
Operating virtual junction temperature, TJ
Lead temperature
(2)
(3)
(4)
MAX
UNIT
20
V
–6.5
20
V
–0.3
20
V
–0.3
VDD + 0.3
–2
VDD + 0.3
–40
A
5
A
150
°C
300
Reflow
260
–65
V
0.3
Soldering, 10 s
Storage temperature, Tstg
(1)
MIN
–0.3
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See
Packaging Section of the datasheet for thermal limitations and considerations of packages.
The maximum voltage on the Input and Enable pins is not restricted by the voltage on the VDD pin.
Values are verified by characterization on bench.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002 (1)
±4000
Charged-device model (CDM), per AEC Q100-011
±1000
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VDD
Supply voltage
Input voltage
INA, INB
Enable voltage
ENA and ENB
Operating junction temperature
MIN
NOM
MAX
4.5
12
18
UNIT
V
–5
18
V
0
18
V
–40
140
°C
7.4 Thermal Information
THERMAL METRIC (1)
D
8 PINS
RθJA
Junction-to-ambient thermal resistance
128
RθJC(top)
Junction-to-case (top) thermal resistance
77.7
RθJB
Junction-to-board thermal resistance
68.5
ψJT
Junction-to-top characterization parameter
20.7
ψJB
Junction-to-board characterization parameter
68
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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7.5 Electrical Characteristics
VDD = 12 V, TA = TJ = –40 °C to 140 °C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the
specified terminal (unless otherwise noted,)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
VDD = 3.4 V, INA = VDD, INB = VDD
55
125
225
VDD = 3.4 V, INA = GND, INB = GND
25
125
225
TJ = 25°C
3.91
4.2
4.5
TJ = –40°C to 140°C
UNIT
BIAS CURRENTS
IDD(off)
Startup current
μA
UNDERVOLTAGE LOCKOUT (UVLO)
VON
Supply start threshold
3.75
4.2
4.65
VOFF
Minimum operating voltage after
supply start
3.6
3.9
4.4
VDD_H
Supply voltage hysteresis
0.2
0.3
0.5
55
70
V
INPUTS (INA, INB)
VIN_H
Input signal high threshold
Output high for non-inverting input pins
Output low for inverting input pins
VIN_L
Input signal low threshold
Output low for non-inverting input pins
Output high for inverting input pins
VIN_HYS
Input hysteresis
30
%VDD
38
17
ENABLE (ENA, ENB)
VEN_H
Enable signal high threshold
Output enabled
1.7
1.9
2.1
VEN_L
Enable signal low threshold
Output disabled
0.95
1.10
1.25
VEN_HYS
Enable hysteresis
0.7
0.8
1.1
V
OUTPUTS (OUTA, OUTB)
ISNK/SRC
Sink and source peak current (1)
CLOAD = 0.22 µF, fSW = 1 kHz
VDD–VOH
High output voltage
IOUT = –10 mA
0.075
VOL
Low output voltage
IOUT = 10 mA
0.01
ROH
Output pullup resistance (2)
IOUT = –10 mA
2.5
5
7.5
Ω
ROL
Output pulldown resistance
IOUT = 10 mA
0.15
0.5
1
Ω
(1)
(2)
±5
A
V
Ensured by design.
ROH represents on-resistance of only the P-Channel MOSFET device in pullup structure of UCC27528-Q1 output stage.
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tR
Rise time
CLOAD = 1.8 nF, VDD = 10 V
7
ns
tF
Fall time
CLOAD = 1.8 nF, VDD = 10 V
6
ns
tM
Delay matching between 2 channels
INA = INB, OUTA and OUTB at 50%
transition point, VDD = 10 V
1
tPW
Minimum input pulse width that
changes the output state
VDD = 10 V
tD1, tD2
Input to output propagation delay,
See Figure 2.
CLOAD = 1.8 nF, 7-V input pulse,
VDD = 10 V
6
17
26
ns
tD3, tD4
EN to output propagation delay,
See Figure 1 .
CLOAD = 1.8 nF, 7-V enable pulse,
VDD = 10 V
6
13
23
ns
4
15
ns
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High
Input
Low
High
Enable
Low
90%
Output
10%
tD3
tD4
UDG-11217
Figure 1. Enable Function
(Non-Inverting Input Driver Operation)
High
Input
Low
High
Enable
Low
90%
Output
10%
tD1
tD2
UDG-11219
Figure 2. Non-Inverting Input Driver Operation
6
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7.7 Typical Characteristics
10
0.17
IN = Low/High
Supply Current (mA)
Startup Current (mA)
0.16
0.15
0.14
0.13
0.12
9
8
7
0.11
0.10
−50
0
50
Temperature (°C)
100
6
−50
150
0
G001
VDD = 12 V
VDD = 3.4 V
50
Temperature (°C)
100
150
G001
CLOAD = 500 pF
Both Channels
Switching
fSW = 500 kHz
Figure 3. Startup Current vs Temperature
Figure 4. Operating Supply Current vs Temperature
(Outputs Switching)
4.8
INA/INB = VDD
INA/INB = GND
UVLO Rising
UVLO Falling
0.7
4.6
UVLO Threshold (V)
Operating Supply Current (mA)
0.8
0.6
0.5
0.4
4.4
4.2
4
0.3
−50
0
50
Temperature (°C)
100
3.8
−50
150
0
G001
50
Temperature (°C)
100
150
G001
VDD = 12 V
Figure 5. Supply Current vs Temperature (Outputs In DC
On/Off Condition)
Figure 6. UVLO Threshold vs Temperature
7.6
EN High Threshold
EN Low Threshold
Enable Threshold (V)
Input Threshold (V)
7
2.2
Input High Threshold
Input Low Threshold
6.4
5.8
5.2
1.8
1.4
4.6
4
−50
0
50
Temperature (°C)
100
150
1
−50
0
G001
VDD = 12 V
50
Temperature (°C)
100
150
G001
VDD = 12 V
Figure 7. Input Threshold vs Temperature
Figure 8. Enable Threshold vs Temperature
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Typical Characteristics (continued)
7
1
RoL
Output Pulldown Resistance (Ω)
Output Pullup Resistance (Ω)
RoH
6
5
4
3
−50
0
VDD = 12 V
50
Temperature (°C)
100
0.6
0.4
0.2
−50
150
IOUT = 10 mA
VDD = 12 V
7
7
Fall Time (ns)
8
6
100
150
G001
IOUT = 10 mA
6
5
4
−50
0
VDD = 10 V
50
Temperature (°C)
100
4
−50
150
0
G001
CLOAD = 1.8 nF
VDD = 10 V
Figure 11. Rise Time vs Temperature
50
Temperature (°C)
100
150
G001
CLOAD = 1.8 nF
Figure 12. Fall Time vs Temperature
20
16
Turn−On
Turn_Off
Enable Propagation Delay (ns)
Input Propagation Delay (ns)
50
Temperature (°C)
Figure 10. Output Pulldown Resistance vs Temperature
8
5
18
16
14
12
−50
0
50
Temperature (°C)
100
150
Turn−On
Turn_Off
14
12
10
8
−50
0
G001
VDD = 10 V
50
Temperature (°C)
100
150
G001
VDD = 10 V
Figure 13. Input To Output Propagation Delay vs
Temperature
8
0
G001
Figure 9. Output Pullup Resistance vs Temperature
Rise Time (ns)
0.8
Figure 14. En To Output Propagation Delay vs Temperature
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Typical Characteristics (continued)
30
VDD = 4.5 V
VDD = 12 V
VDD = 15 V
60
50
40
30
20
22
18
14
10
10
0
0
6
100 200 300 400 500 600 700 800 900 1000
Frequency (kHz)
G000
Both Channels Switching
CLOAD = 1.8 nF
8
12
Supply Voltage (V)
16
20
G000
Figure 16. Propagation Delays vs Supply Voltage
18
10
8
Rise time (ns)
Rise time (ns)
4
CLOAD = 1.8 nF
Figure 15. Operating Supply Current vs Frequency
12
6
Input to Output On Delay
Input to Output Off Delay
EN to Output On Delay
EN to Output Off Delay
26
Propagation Delays (ns)
Operating Supply Current (mA)
70
4
8
12
Supply Voltage (V)
16
6
4
20
4
8
12
Supply Voltage (V)
G000
CLOAD = 1.8 nF
16
20
G000
CLOAD = 1.8 nF
Figure 17. Rise Time vs Supply Voltage
Figure 18. Fall Time vs Supply Voltage
2.5
VDD = 4.5 V
Enable Threshold (V)
Enable High Threshold
Enable Low Threshold
2
1.5
1
0.5
−50
0
50
Temperature (°C)
100
150
G017
VDD = 4.5 V
Figure 19. Enable Threshold vs Temperature
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8 Detailed Description
8.1 Overview
The UCC27528-Q1 device represents Texas Instruments’ latest generation of dual-channel, low-side high-speed
gate driver devices featuring 5-A source- and sink current capability, industry best-in-class switching
characteristics, and many other features listed in Table 1 all of which combine to provide efficient, robust, and
reliable operation in high-frequency switching power circuits.
Table 1. UCC27528-Q1 Features and Benefits
FEATURE
BENEFIT
Best-in-class 13-ns (typical) propagation delay
Extremely low pulse-transmission distortion
1-ns (typical) delay matching between channels
Ease of paralleling outputs for higher (2×) current capability, ease of
driving parallel power switches
Expanded VDD operating range of 4.5 V to 18 V
Expanded operating temperature range of –40 °C to 140 °C
(See the Electrical Characteristics table)
Flexibility in system design
VDD UVLO protection
Outputs are held low in UVLO condition, which ensures predictable,
glitch-free operation at power up and power down
Outputs held low when the input pins (INx) are in floating condition
Feature which is specifically useful in passing abnormal condition
tests during certification
Outputs enabled when the enable pins (ENx) are in floating condition
Pin-to-pin compatibility with the UCC2732x family of device from TI,
in designs where pin 1 and pin 8 are in the floating condition
CMOS input threshold logic
Enhanced noise immunity, higher threshold leve,l and wider
hysteresis which is a function of the VDD supply voltage and ability
to employ RCD delay circuits on input pins.
The input and enable pins are able to handle voltage levels not
restricted by VDD pin bias voltage
System simplification, specifically related to auxiliary bias supply
architecture
8.2 Functional Block Diagram
VDD
VDD
500 kΩ
500 kΩ
ENA
ENB
1
8
VDD
INA
OUTA
2
7
465 kΩ
VDD
VDD
GND
VDD
UVLO
6
3
VDD
OUTB
INB
4
5
465 kΩ
10
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8.3 Feature Description
8.3.1 VDD and Undervoltage Lockout
The UCC27528-Q1 device has internal undervoltage-lockout (UVLO) protection feature on the VDD pin supplycircuit blocks. When the VDD supply is rising and the level is still below UVLO threshold, the circuit (as shown in
the Functional Block Diagram) holds the output low, regardless of the status of the inputs. The UVLO threshold is
4.25 V (typical) with 350-mV hysteresis (typical). This hysteresis helps prevent chatter when low VDD supply
voltages have noise from the power supply and also when droops in the VDD bias voltage occur when the
system commences switching and a sudden increase in the IDD current occurs. The ability to operate at lowvoltage levels, such as below 5 V, along with best-in-class switching characteristics, is well suited for driving
emerging GaN-power semiconductor devices.
For example, at power-up, the UCC27528-Q1 driver device output remains low until the VDD voltage reaches the
UVLO threshold if the enable pin is active or floating. The magnitude of the OUT signal rises with VDD until
steady-state VDD is reached. The non-inverting operation in Figure 20 shows that the output remains low until the
UVLO threshold is reached. The output is then in-phase with the input.
Because the device draws current from the VDD pin to bias all internal circuits, for the best high-speed circuit
performance, two VDD bypass capacitors are recommended to prevent noise problems. The use of surfacemount components is highly recommended. A 0.1-μF ceramic capacitor should be located as close as possible to
the VDD to GND pins of the gate-driver device. In addition, to help deliver the high-current peaks required by the
load, a larger capacitor (such as a 1-μF capacitor) with relatively low ESR should be connected in parallel and
close proximity. The parallel combination of capacitors should present a low impedance characteristic for the
expected current levels and switching frequencies in the application.
VDD Threshold
VDD
EN
IN
OUT
UDG-11228
Figure 20. Power-Up Non-Inverting Driver
8.3.2 Operating Supply Current
The UCC27528-Q1 device features very low quiescent IDD currents. Figure 3, Figure 4, and Figure 5 list the
typical operating supply current in the UVLO state and fully-on state (under static and switching conditions). The
IDD current that is present when the device is fully on and the outputs are in a static state (DC high or DC low,
see Figure 4) represents lowest quiescent IDD current when all the internal logic circuits of the device are fully
operational. The total supply current is the sum of the quiescent IDD current, the average IOUT current from
switching, and any current related to pullup resistors on the enable pins and inverting input pins.
Figure 15 shows a complete characterization of the IDD current as a function of switching frequency at different
VDD bias voltages under 1.8-nF switching load in both channels. The strikingly linear variation and close
correlation with the theoretical value of the average IOUT indicates negligible shoot-through inside the gate-driver
device attesting to the high-speed characteristics.
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8.3.3 Input Stage
The input pins of UCC27528-Q1 gate driver device are based on CMOS input threshold logic. In CMOS input
threshold logic the threshold voltage level is a function of the bias voltage on the VDD pin of the device. The
typical high threshold is 55% of the VDD supply voltage and the typical low threshold is 38% of the VDD supply
voltage. Built-in hysteresis is available which is typically 17% of the VDD supply voltage.
In most applications, the absolute value of the threshold voltage offered by the CMOS logic is higher (for
example, VIN_H = 5.5 V if VDD = 10 V) than what is offered by the more common TTL and CMOS-compatible input
threshold logic where VIN_H is typically less than 3 V. The same is true of the input-threshold hysteresis
parameter as well. This feature offers the following benefits:
• Better noise immunity which is desirable in high power systems.
• Ability to accept slow dV/dt input signals, which allows designers to use RCD circuits on the input pin to
program propagation delays in the application, as shown in Figure 21.
D
PWM Input
Rdel
VH
INx
OUTx
VL
PWM Input Signal
Cdel
VIN
Driver Output
Figure 21. Using RCD Circuits
æ VL - VIN _ H
ö
t del = -RdelCdel ´ In ç
+ 1÷
ç V -V
÷
H
L
è
ø
(1)
The UCC27528-Q1 device features an important feature, whenever any of the input pins is in a floating condition,
the output of the respective channel is held in the low state. Holding the respective channel in the low state is
achieved by using GND pulldown resistors on all the non-inverting input pins (INA, INB), as shown in the
Functional Block Diagram.
• To drive channel x (x = A or B) in a non-inverting configuration, apply the PWM control input signal to one of
the IN pins. In this case, the unused IN pin must be biased low (for example, tied to GND) to enable the
output of this channel.
– Alternately, the unused IN pin can be used to implement the enable and disable function using an external
logic signal. The output pin is disabled when the unused IN pin is biased high and the OUT pin is enabled
when the unused IN pin is biased low.
See Table 2 and Figure 24 for additional clarification.
8.3.4 Enable Function
The enable function is an extremely beneficial feature in gate driver devices, especially for certain applications
such as synchronous rectification where the driver outputs can be disabled in light-load conditions to prevent
negative current circulation and to improve light-load efficiency.
The UCC27528-Q1 device has independent enable pins, ENx, for exclusive control of the operation of each
driver channel. The enable pins are based on a non-inverting configuration (active-high operation). Therefore,
when the ENx pins are driven high the drivers are enabled and when ENx pins are driven low and the drivers are
disabled. Similar to the input pins, the enable pins are also based on a TTL and CMOS-compatible input
threshold logic that is independent of the supply voltage and can be effectively controlled using logic signals from
3.3-V and 5-V microcontrollers. The UCC27528-Q1 device also features tight control of the enable-function
threshold voltage levels which eases system design considerations and ensures stable operation across
temperature (see Figure 8). The ENx pins are internally pulled up to the VDD supply using pullup resistors as a
result of which the outputs of the device are enabled in the default state. Therefore, the ENx pins can be left
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floating or not connected (NC) for standard operation in which case the enable feature is not needed. This ability
allows the UCC27528-Q1 device to be pin-to-pin compatible with TI’s previous-generation drivers, the
UCC27323, UCC273234, and UCC273235 device, where pin 1 and pin 8 are NC pins. If the Channel A and
Channel B inputs and outputs are connected in parallel to increase the driver current capacity, the ENA and ENB
pins should be connected and driven together.
8.3.5 Output Stage
The UCC27528-Q1 output stage features a unique architecture on the pullup structure which delivers the
highest-peak source current when it is most needed during the Miller plateau region of the power-switch turn-on
transition (when the power switch drain and collector voltage experiences dV/dt). The output-stage pullup
structure features a P-Channel MOSFET and an additional N-Channel MOSFET in parallel. The N-Channel
MOSFET provides a brief boost in the peak sourcing current which enables fast turn-on. This boost is
accomplished by briefly turning on the N-Channel MOSFET during a short time frame when the output is
changing state from low to high.
VCC
ROH
RNMOS, Pullup
Input Signal
Gate
Voltage
Boost
Anti ShootThrough
Circuitry
OUT
Narrow pulse at
each turn on
ROL
Figure 22. UCC27528-Q1 Gate Driver Output Structure
The ROH parameter (see the Electrical Characteristics table) is a DC measurement and is representative of the
on-resistance of the P-Channel device only because the N-Channel device is held in the off state in DC condition
and is turned on only for a short time frame when the output changes state from low to high. Therefore, the
effective resistance of UCC27528-Q1 pullup stage during turn-on instant is much lower than what is represented
by ROH parameter.
The pulldown structure in the UCC27528-Q1 device is simply composed of a N-Channel MOSFET. The ROL
parameter (see the Electrical Characteristics table), which is also a DC measurement, is representative of the
impedance of the pulldown stage in the device. In the UCC27528-Q1 device, the effective resistance of the
hybrid pullup structure during turnon is estimated on design considerations as approximately 1.5 × ROL.
Each output stage in the UCC27528-Q1 device is capable of supplying 5-A peak source and 5-A peak sink
current pulses. The output voltage swings between VDD and GND, providing rail-to-rail operation because of the
MOS output stage which delivers very-low dropout. The presence of the MOSFET body diodes also offers low
impedance to switching overshoots and undershoots which means that in many cases, external Schottky diode
clamps can be eliminated. The outputs of these drivers are designed to withstand 500-mA reverse current
without either damage to the device or logic malfunction.
The UCC27528-Q1 device is particularly suited for dual-polarity, symmetrical drive-gate transformer applications
where the primary winding of transformer driven by the OUTA and OUTB pins, with the inputs INA and INB
driven complementary to each other. The device is well suited for these applications because of the extremely
low dropout offered by the MOS output stage of the device, both during high (VOH) and low (VOL) states along
with the low impedance of the driver output stage, all of which allow alleviate concerns regarding transformer
demagnetization and flux imbalance. The low propagation delays also ensure accurate reset for high-frequency
applications.
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For applications that have zero voltage switching during power MOSFET turn-on or turn-off interval, the driver
supplies high-peak current for fast switching even though the miller plateau is not present. This situation often
occurs in synchronous rectifier applications because the body diode is generally conducting before power
MOSFET is switched on.
8.3.6 Low Propagation Delays and Tightly Matched Outputs
The UCC27528-Q1 driver devices offer a very low propagation delay of 17-ns (typical) between input and output
which offers lowest level of pulse transmission distortion available in the industry for high-frequency switching
applications. For example in synchronous rectifier applications, the SR MOSFETs can be driven with very low
distortion when a single driver device is used to drive both the SR MOSFETs. Further, the driver devices also
feature an extremely accurate, 1-ns (typ) matched internal propagation delays between the two channels which
is beneficial for applications requiring dual gate drives with critical timing. For example in a PFC application, a
pair of paralleled MOSFETs may be driven independently using each output channel, which the inputs of both
channels are driven by a common control signal from the PFC controller device. In this case the 1-ns delay
matching ensures that the paralleled MOSFETs are driven in a simultaneous fashion with the minimum of turn-on
delay difference.
Since the CMOS input threshold of UCC27528-Q1 allows the use of slow dV/dt input signals, when paralleling
outputs for obtaining higher peak output current capability, it is recommended to connect external gate resistors
directly to the output pins to avoid shoot-through current conduction between the 2 channels, as shown in
Figure 23. While the two channels are inherently very well matched (4-ns Max propagation delay), it should be
noted that there may be differences in the input threshold voltage level between the two channels or differences
in the input signals which can cause the delay between the two outputs.
VDD
VDD
500 kΩ
500 kΩ
ENB
ENA
1
8
ISHOOT-THROUGH
VDD
OUTA
INA
Slow Input Signal
2
VIN_H
(Channel B)
7
465 kΩ
VIN_H
(Channel A)
VDD
VDD
VDD
UVLO
GND
6
3
VDD
OUTB
INB
4
5
465 kΩ
Figure 23. Slow Input Signal May Cause Shoot-Through Between Channels During Paralleling
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8.4 Device Functional Modes
The device operates in normal mode and UVLO mode. See the VDD and Undervoltage Lockout section for
information on the UVLO operation mode. In the normal mode the output state is dependent on the state of the
IN pins. Table 2 lists the output states for different input-pin combinations.
Table 2. Device Logic Table
ENA
ENB
INA
INB
OUTA
H
H
H
H
H
H
H
H
L
L
Any
Any
x (1)
x (1)
(1)
L
L
L
L
L
H
L
H
H
L
H
L
H
H
H
H
Any
Any
L
L
x (1)
x (1)
L
L
L
L
L
L
(1)
L
H
L
H
x (1)
x (1)
H
L
H
L
x (1)
x (1)
H
H
H
H
x
(1)
x
OUTB
Floating condition
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
High-current gate-driver devices are required in switching power applications for a variety of reasons. To
implement fast switching in power devices and reduce associated switching power losses, a powerful gate-driver
device can be employed between the PWM output of control devices and the gates of the power semiconductor
devices.
Furthermore, gate driver devices are indispensable when having the PWM-controller device directly drive the
gates of the switching devices is not feasible. With the advent of digital power, this situation is often encountered
because the PWM signal from the digital controller is typically a 3.3-V logic signal which is not capable of
effectively turning on a power switch. A level shifting circuitry is required to boost the 3.3-V signal to the gatedrive voltage (such as 12 V) to fully turn on the power device and minimize conduction losses. Traditional buffer
drive circuits based on NPN and PNP bipolar transistors in totem-pole arrangement are emitter follower
configurations. These circuits prove inadequate with digital power because they lack level-shifting capability.
Gate driver devices effectively combine both the level-shifting and buffer drive functions. Gate driver devices also
satisfy other needs such as minimizing the effect of high-frequency switching noise by locating the high-current
driver physically close to the power switch, driving gate drive transformers and controlling floating power device
gates which reduces power dissipation and thermal stress in controller devices by moving gate charge power
losses into itself. In summary Gate-driver devices are an extremely important component in switching power
combining benefits of high performance, low cost, component count, board-space reduction, and simplified
system design.
9.2 Typical Application
ENB
UCC27528-Q1
ENA
1
ENA
INA
2
INA
3
GND
4
INB
ENB
8
OUTA
7
VDD
6
OUTB
5
V+
GND
INB
GND
GND
UDG-11225
Figure 24. UCC27528-Q1 Typical Application Diagram
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Typical Application (continued)
9.2.1 Design Requirements
When selecting the proper gate driver device for an end application, some design considerations must be
evaluated first to make the most appropriate selection. Among these considerations are input-to-output Logic,
enable and disable function, supply voltage (VDD), propagation delay, and power dissipation.
The design requirements include the following:
• Supply voltage (VDD)
• Type of input threshold (CMOS or TTL)
• Propagation delay
• Delay matching
• Peak drive current
• Enable function (whether or not it exists)
• Operating temperature range
9.2.2 Detailed Design Procedure
9.2.2.1 Input-to-Output Logic
The design should specify which type of input-to-output configuration should be used. The UCC27528-Q1 device
can only provide dual non-inverting input-to-output with enable control.
9.2.2.2 Enable and Disable Function
Certain applications demand independent control of the output state of the driver. The UCC27528-Q1 device
offers two independent enable pins ENx pins for exclusive control of each driver channels as listed in Table 2.
The ENA, ENB pins in the UCC27528-Q1 device can be in the floating condition during standard operation with
the outputs enabled.
9.2.2.3 VDD Bias Supply Voltage
The bias supply voltage to be applied to the VDD pin of the device should never exceed the values listed in the
Recommended Operating Conditions table. However, different power switches demand different voltage levels to
be applied at the gate terminals for effective turnon and turnoff. With certain power switches, a positive gate
voltage may be required for turnon and a negative gate voltage may be required for turnoff, in which case the
VDD bias supply equals the voltage differential. With a wide operating range from 4.5 V to 18 V, the UCC27528Q1 device can be used to drive a variety of power switches, such as Si MOSFETs (for example, VGS = 4.5 V,
10V, 12 V), IGBTs (VGE = 15 V, 18 V), and wide-bandgap power semiconductors (such as GaN, certain types of
which allow no higher than 6 V to be applied to the gate pins).
9.2.2.4 Propagation Delay
The acceptable propagation delay from the gate driver is dependent on the switching frequency at which it is
used and the acceptable level of pulse distortion to the system. The UCC27528-Q1 device features fast 17-ns
(typical) propagation delays which ensures very-little pulse distortion and allows operation at very highfrequencies. See the Switching Characteristics table for the propagation and switching characteristics of the
UCC27528-Q1 device. For certain application that require programmable propagation delay, The UCC27528-Q1
device can accept slow dv/dt input signals which allows designers to use RCD circuits on the input pin to
program propagation as shown in Figure 21.
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Typical Application (continued)
9.2.2.5 Drive Current and Power Dissipation
The UCC27528-Q1 driver device is capable of delivering 5 A of current to a MOSFET gate for a period of several
hundred nanoseconds at VDD = 12 V. High peak current is required to quickly turn on the device. Then, to turn off
the device, the driver is required to sink a similar amount of current to ground. This process repeats at the
operating frequency of the power device. The power dissipated in the gate-driver device package depends on the
following factors:
• The gate charge required of the power MOSFET (usually a function of the drive voltage VGS, which is very
close to input bias supply voltage VDD because of low VOH drop-out)
• Switching frequency
• Use of external gate resistors
Because the UCC27528-Q1 device features very-low quiescent currents and internal logic to eliminate any
shoot-through in the output driver stage, the effect on the power dissipation within the gate driver can be safely
assumed to be negligible.
When a driver device is tested with a discrete, capacitive load, calculating the power that is required from the
bias supply fairly simple. Use Equation 2 to calculate the energy that must be transferred from the bias supply to
charge the capacitor.
1
EG = CLOAD VDD2
2
where
•
•
CLOAD is load capacitor
VDD is bias voltage feeding the driver
(2)
An equal amount of energy is dissipated when the capacitor is charged which leads to a total power loss given
by Equation 3.
PG = CLOAD VDD2 fSW
where
•
fSW is the switching frequency
(3)
With VDD = 12 V, CLOAD = 10 nF, and fSW = 300 kHz, use Equation 4 to calculate the power loss.
PG = 10 nF ´ 12 V 2 ´ 300 kHz = 0.432 W
(4)
The switching load presented by a power MOSFET can be converted to an equivalent capacitance by examining
the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus
the added charge required to swing the drain voltage of the power device as it switches between the ON and
OFF states. Most manufacturers provide specifications that provide the typical and maximum gate charge, in nC,
to switch the device under specified conditions. Use the gate charge Qg to determine the power that must be
dissipated when charging a capacitor by using the equivalence Qg = CLOADVDD to provide Equation 5 for power.
PG = CLOAD VDD2 fSW = Qg VDD fSW
(5)
Assuming that the UCC27528-Q1 device is driving power MOSFET with 60 nC of gate charge (Qg = 60 nC at
VDD = 12 V) on each output, use Equation 6 to calculate the gate-charge related power loss.
PG = 2 ´ 60 nC ´ 12 V ´ 300 kHz = 0.432 W
(6)
This power, PG, is dissipated in the resistive elements of the circuit when the MOSFET is turned on or off. Half of
the total power is dissipated when the load capacitor is charged during turn-on, and the other half is dissipated
when the load capacitor is discharged during turn-off. When no external gate resistor is employed between the
driver and MOSFET or IGBT, this power is completely dissipated inside the driver package. With the use of
external gate drive resistors, the power dissipation is shared between the internal resistance of driver and
external gate resistor in accordance to the ratio of the resistances (more power dissipated in the higher
resistance component). Based on this simplified analysis, use Equation 7 to calculate the driver power
dissipation during switching.
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Typical Application (continued)
æ
ö
ROFF
RON
PSW = 0.5 ´ QG ´ VDD ´ fSW ´ ç
+
÷
è ROFF + RGATE RON + RGATE ø
where
•
•
ROFF = ROL
RON (effective resistance of pullup structure) = 1.5 × ROL
(7)
In addition to the previously calculated gate-charge related power dissipation, additional dissipation in the driver
is related to the power associated with the quiescent bias current consumed by the device to bias all internal
circuits, such as input stage (with pullup and pulldown resistors), enable, and UVLO sections. Referring to
Figure 4, the quiescent current is less than 0.6 mA even in the highest case. Use Equation 8 to calculate the
quiescent power dissipation.
PQ = IDD VDD
(8)
Assuming, IDD = 6 mA, use Equation 9 to calculate the power loss.
PQ = 0.6 mA ´ 12 V = 7.2 mW
(9)
Clearly, this power loss is insignificant compared to gate-charge related power dissipation that was calculated
previously.
With a 12-V supply, the bias current can be estimated as shown in Equation 10, with an additional 0.6-mA
overhead for the quiescent consumption:
P
0.432 W
IDD ~ G =
= 0.036 A
VDD
12 V
(10)
9.2.3 Application Curves
VDD = 5 V, Load = 2 RJK0453DPB (power FET)
Figure 25. Typical Turnon Waveform
Figure 26. Typical Turnoff Waveform
10 Power Supply Recommendations
The bias supply voltage range for which the UCC27528-Q1 device is rated to operate is from 4.5 V to 18 V. The
lower end of this range is governed by the internal undervoltage-lockout (UVLO) protection feature on the VDD
pin supply circuit blocks. Whenever the driver is in UVLO condition when the VDD pin voltage is below the VON
supply start threshold, this feature holds the output low, regardless of the status of the inputs. The upper end of
this range is driven by the 20-V absolute-maximum voltage rating of the VDD pin of the device (which is a stress
rating). Maintaining a 2-V margin to allow for transient voltage spikes, the maximum recommended voltage for
the VDD pin is 18 V.
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The UVLO protection feature also involves a hysteresis function. This hysteresis function means that when the
VDD pin bias voltage exceeds the threshold voltage and device begins to operate, and if the voltage drops, then
the device continues to deliver normal functionality unless the voltage drop exceeds the hysteresis specification,
VDD_H. Therefore, ensuring that, while operating at or near the 4.2-V range, the voltage ripple on the auxiliary
power supply output is smaller than the hysteresis specification of the device is important to avoid triggering
device shutdown. During system shutdown, the device operation continues until the VDD pin voltage has
dropped below the VOFF threshold which must be accounted for while evaluating system shutdown timing design
requirements. Likewise, at system startup, the device does not begin operation until the VDD pin voltage has
exceeded above the VON threshold.
The quiescent current consumed by the internal circuit blocks of the device is supplied through the VDD pin.
Although this fact is well known, recognizing that the charge for source current pulses delivered by the OUTA or
OUTB pin is also supplied through the same VDD pin is important. As a result, every time a current is sourced
out of the output pins, a corresponding current pulse is delivered into the device through the VDD pin. Thus
ensuring that local bypass capacitors are provided between the VDD and GND pins and located as close to the
device as possible for the purpose of decoupling is important. A low-ESR, ceramic surface-mount capacitor is a
must. TI recommends having 2 capacitors; a 100-nF ceramic surface-mount capacitor which can be nudged very
close to the pins of the device and another surface-mount capacitor of few microfarads added in parallel.
11 Layout
11.1 Layout Guidelines
Proper PCB layout is extremely important in a high-current, fast-switching circuit to provide appropriate device
operation and design robustness. The UCC27528-Q1 gate driver incorporates short propagation delays and
powerful output stages capable of delivering large current peaks with very-fast rise and fall times at the gate of
the power MOSFET to facilitate voltage transitions very quickly. At higher VDD voltages, the peak current
capability is even higher (5-A peak current is at VDD = 12 V). Very high di/dt can cause unacceptable ringing if
the trace lengths and impedances are not well controlled. The following circuit layout guidelines are strongly
recommended when designing with these high-speed drivers:
• Locate the driver device as close as possible to power device to minimize the length of high-current traces
between the output pins and the gate of the power device.
• Locate the VDD bypass capacitors between the VDD and GND pins as close as possible to the driver with
minimal trace length to improve the noise filtering. These capacitors support the high peak current that is
drawn from the VDD pin during turn-on of power MOSFET. The use of low inductance SMD components,
such as chip resistors and chip capacitors, is highly recommended.
• The turn-on and turn-off current-loop paths (driver device, power MOSFET, and VDD bypass capacitor)
should be minimized as much as possible to keep the stray inductance to a minimum. High dI/dt is
established in these loops at two instances: during turn-on transients and turn-off transients, which will induce
significant voltage transients on the output pin of the driver device and gate of the power MOSFET.
• Wherever possible parallel the source and return traces, taking advantage of flux cancellation.
• Separate power traces and signal traces, such as output and input signals.
• Star-point grounding is a good way to minimize noise coupling from one current loop to another. The GND of
the driver should be connected to the other circuit nodes such as the source of power MOSFET, the ground
of PWM controller, and other sources at one, single point. The connected paths should be as short as
possible to reduce inductance and be as wide as possible to reduce resistance.
• Use a ground plane to provide noise shielding. Fast rise and fall times at the OUTx pin may corrupt the input
signals during transition. The ground plane must not be a conduction path for any current loop. Instead the
ground plane must be connected to the star-point with one single trace to establish the ground potential. In
addition to noise shielding, the ground plane can help in power dissipation.
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11.2 Layout Example
INA
8 : ENB
2 : INA
7 : OUTA
3 : GND
6 : VDD
4 : INB
5 : OUTB
0
GND
OUTA
OUTB
VDD
GND
INB
1 : ENA
1
VDD
2
GND
VDD
Figure 27. Layout Example for UCC27528-Q1
11.3 Thermal Considerations
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the device package. In order for a gate driver device to be useful over a particular temperature
range the package must allow for the efficient removal of the heat produced while keeping the junction
temperature within rated limits.
12 Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
UCC27528QDRQ1
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 140
27528Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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