PS2513L-1-F3-A

DATA SHEET PHOTOCOUPLER PS2513-1,PS2513L-1 HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2513-1 and PS2513L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2513-1 is in a plastic DIP (Dual In-line Package) and the PS2513L-1 is lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) PIN CONNECTION (Top View) • High collector to emitter voltage (VCEO = 120 V) • Guaranteed maximum switching speed 4 3 (toff ≤ 60 μs @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ) 1. Anode 2. Cathode 3. Emitter 4. Collector • High-speed switching (ton = 5 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ) (toff = 25 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ) • Ordering number of tape product: PS2513L-1-F3: 2 000 pcs/reel • Safety standards 1 2 • UL approved: No. E72422 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option) APPLICATIONS • Power supply • Air conditioner • FA equipment The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PN10163EJ04V0DS (4th edition) Date Published November 2009 NS Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. PS2513-1,PS2513L-1 PACKAGE DIMENSIONS (UNIT: mm) DIP Type PS2513-1 4.6±0.35 6.5±0.5 4 3 1 2 3.5±0.3 3.2±0.4 4.15±0.4 7.62 0 to 15° +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 Lead Bending Type PS2513L-1 4.6±0.35 3 1 2 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 0.1 +0.1 –0.05 3.5±0.3 0.25 +0.1 –0.05 6.5±0.5 4 0.15 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 3.5 mm Isolation Thickness 0.2 mm 2 Data Sheet PN10163EJ04V0DS PS2513-1,PS2513L-1 MARKING EXAMPLE No. 1 pin Mark 2513 NJ931 N J Assembly Lot 9 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Data Sheet PN10163EJ04V0DS 3 PS2513-1,PS2513L-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Application Part Approval Number Specification PS2513-1 PS2513-1-A Pb-Free Magazine case 100 pcs Standard products PS2513L-1 PS2513L-1-A PS2513L-1-F3 PS2513L-1-F3-A Embossed Tape 2 000 pcs/reel PS2513-1-V PS2513-1-V-A Magazine case 100 pcs PS2513L-1-V PS2513L-1-V-A PS2513L-1-V-F3 PS2513L-1-V-F3-A (UL Approved) DIN EN60747-5-2 (VDE0884 Part2) Embossed Tape 2 000 pcs/reel approved products (Option) *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Reverse Voltage VR 6 V Forward Current (DC) IF 60 mA ΔPD/°C 1.5 mW/°C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 120 V Emitter to Collector Voltage VECO 6 V IC 30 mA ΔPC/°C 1.5 mW/°C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. 4 Data Sheet PN10163EJ04V0DS *1 PS2513-1 PS2513-1,PS2513L-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Transistor Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Collector to Emitter Dark ICEO MIN. TYP. MAX. Unit 1.1 1.3 V 5 μA 30 VCE = 120 V, IF = 0 mA pF 100 nA Current Coupled Current Transfer Ratio CTR1 IF = 1 mA, VCE = 5 V 25 75 100 % (IC/IF) CTR2 IF = 5 mA, VCE = 5 V 50 125 200 % Collector Saturation VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V Voltage Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *1 tr Rise Time *1 Fall Time VCC = 5 V, IC = 2 mA, RL = 100 Ω tf *1 ton *1 toff Turn-on Time Turn-off Time 10 Ω 11 0.5 pF 3 μs 4 VCC = 5 V, IF = 5 mA, RL = 1.9 kΩ 5 60 25 60 μs *1 Test circuit for switching time Pulse Input IF VCC PW = 100 μs Duty Cycle = 1/10 50 Ω VOUT RL = 100 Ω, 1.9 kΩ Data Sheet PN10163EJ04V0DS 5 PS2513-1,PS2513L-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 175 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 125 100 75 50 25 0 25 50 100 75 125 100 75 50 25 50 75 100 125 Ambient Temperature TA (°C) Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE TA = +100°C +60°C +25°C Collector Current IC (mA) 30 10 5 0°C –25°C –55°C 1 0.5 25 20 50 mA 20 15 mA A 10 m 10 IF = 5 mA 5 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 10 000 1 000 Collector Current IC (mA) VCE = 5 V 10 V 24 V 40 V 120 V 100 10 1 – 50 –25 0 25 50 75 100 20 mA 10 mA 5 mA 10 5 2 mA 1 IF = 1 mA 0.5 0.1 0 Ambient Temperature TA (°C) 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE (sat) (V) Remark The graphs indicate nominal characteristics. 6 25 35 50 Forward Current IF (mA) 150 0 125 100 Collector to Emitter Dark Current ICEO (nA) 175 Data Sheet PN10163EJ04V0DS 1.0 PS2513-1,PS2513L-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 250 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE VCC = 5 V, n=3 200 Sample A B C 150 100 50 0 0.1 100 0.5 Ambient Temperature TA (°C) 50 1 000 IF = 5 mA, VCC = 5 V, CTR = 130% Switching Time t ( μ s) IC = 2 mA, VCC = 10 V, CTR = 130% Switching Time t ( μ s) 10 SWITCHING TIME vs. LOAD RESISTANCE 100 tr 10 tf td ts 1 0.1 10 50 100 tf 100 ts 10 tr td 1 1k 5 k 10 k 500 1 k 5k 10 k 50 k Load Resistance RL (Ω) Load Resistance RL (Ω) TURN-ON TIME vs. AMBIENT TEMPERATURE TURN-OFF TIME vs. AMBIENT TEMPERATURE 10 100 k 100 IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ, CTR = 150% Turn-off Time toff ( μ s) Turn-on Time ton ( μ s) 5 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 8 1 6 4 2 0 –50 –25 0 25 50 75 100 IF = 5 mA, VCC = 5 V, 80 RL = 1.9 kΩ, CTR = 150% 60 40 20 0 –50 Ambient Temperature TA (°C) –25 0 25 50 75 100 Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. Data Sheet PN10163EJ04V0DS 7 PS2513-1,PS2513L-1 LONG TERM CTR DEGRADATION 1.2 TYP. CTR (Relative Value) 1.0 0.8 IF = 5 mA TA = 25°C 0.6 IF = 5 mA TA = 60°C 0.4 0.2 0 102 103 104 105 Time (Hr) Remark The graph indicates nominal characteristics. 8 Data Sheet PN10163EJ04V0DS PS2513-1,PS2513L-1 TAPING SPECIFICATIONS (UNIT: mm) 1.55±0.1 4.5 MAX. 10.3±0.1 φ 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 7.5±0.1 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2513L-1-F3 Outline and Dimensions (Reel) 2.0±0.5 R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ 13.0±0.2 φ 330±2.0 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel Data Sheet PN10163EJ04V0DS 15.9 to 19.4 Outer edge of flange 9 PS2513-1,PS2513L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. 10 Data Sheet PN10163EJ04V0DS PS2513-1,PS2513L-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10163EJ04V0DS 11 PS2513-1,PS2513L-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Speck Unit 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 890 Vpeak Upr 1 335 Vpeak Upr 1 669 Vpeak UTR 8 000 Vpeak Upr = 1.5 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C VIO = 500 V dc at TA = 25°C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. 10 11 Ω Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175°C (Tsi) 12 Data Sheet PN10163EJ04V0DS 9 Ω PS2513-1,PS2513L-1 Caution GaAs Products This product uses gallium arsenide (GaAs). 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