CTLM7410-M832D

CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE (SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting • Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM™) surface mount case. These devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. FEATURES • Dual Chip Device • High Current (1.0A) Transistors • Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX) • High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area) • Small TLM 3x2mm Leadless Surface Mount Package • Complementary Devices SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V A W °C °C/W noted) MAX 100 100 UNITS nA nA V V V mV mV 40 25 6.0 1.0 1.65 -65 to +150 76 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise TYP SYMBOL TEST CONDITIONS MIN NPN PNP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA 40 BVCEO IC=10mA 25 BVEBO IE=100μA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 25 VCE(SAT) IC=100mA, IB=10mA 35 40 Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2. 50 75 R2 (19-February 2010) CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE (SAT) SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) TYP SYMBOL TEST CONDITIONS MIN NPN PNP VCE(SAT) IC=200mA, IB=20mA 75 80 VCE(SAT) IC=500mA, IB=50mA 130 150 VCE(SAT) IC=800mA, IB=80mA 200 220 VCE(SAT) IC=1.0A, IB=100mA 250 275 VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz (CTLM3410-M832D) Cob VCB=10V, IE=0, f=1.0MHz (CTLM7410-M832D) MAX 150 250 400 450 1.1 0.9 300 UNITS mV mV mV mV V V 10 15 MHz pF  pF TLM832D CASE - MECHANICAL OUTLINE CTLM3410-M832D Dual NPN Marking Code: CFG CTLM7410-M832D Dual PNP Marking Code: CFH LEAD CODES: 1) Base Q1 2) Emitter Q1 3) Base Q2 4) Emitter Q2 * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 CTLM3474-M832D Complementary NPN & PNP Marking Code: CFJ 5) 6) 7) 8) Collector Collector Collector Collector Q2 Q2 Q1 Q1 R2 (19-February 2010) w w w. c e n t r a l s e m i . c o m