CXT853_10

CXT853 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the CXT853 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING: FULL PART NUMBER SOT-89 CASE FEATURES: APPLICATIONS: • Power Management • DC/DC Converters • Motor Driving • Switching • Low Saturation Voltage: VCE(SAT)=0.340V MAX @ IC=5.0A • PNP Complement: CXT953 SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 200 100 6.0 6.0 1.2 -65 to +150 104 UNITS V V V A W °C °C/W MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) TEST CONDITIONS VCB=150V VCB=150V, TA=100°C VCE=150V, RBE≤1.0kΩ VEB=6.0V IC=100μA IC=10mA, RBE≤1.0kΩ IC=10mA IE=100μA IC=100mA, IB=5mA IC=2.0A, IB=100mA IC=5.0A, IB=500mA IC=5.0A, IB=500mA 200 200 100 6.0 220 210 110 8.0 22 135 50 170 340 1.25 MIN TYP MAX 10 1.0 10 10 UNITS nA μA nA nA V V V V mV mV mV V R1 (23-February 2010) CXT853 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SYMBOL hFE hFE hFE hFE fT Cob ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VCE=2.0V, IC=10mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=4.0A VCE=2.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz 100 100 50 20 200 100 30 190 38 MAX 300 UNITS MHz pF SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m