CZTA27

N EW CZTA27 Central DESCRIPTION TM Semiconductor Corp. NPN HIGH VOLTAGE DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain and high voltage. SOT-223 CASE MAXIMUM RATINGS (TA=25°C) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCES VEBO IC PD TJ,Tstg QJA 60 10 500 2.0 -65 to +150 62.5 UNITS V V mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICES IEBO BVCBO BVCES VCE(SAT) VBE(ON) hFE hFE fT TEST CONDITIONS VCB=50V VCE=50V VEB=10V IC=100m A IC=100m A IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz 10,000 10,000 125 MHz 60 60 1.5 2.0 MIN MAX 100 500 100 UNITS nA nA nA V V V V 408 All Dimensions in Inches (mm) 723 9,(:  ƒƒ           ƒ ƒ              LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR R2 409