PN5134_11

PN5134 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN5134 is a small signal NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE Collector-Base Voltage Emitter-Base Voltage MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 20 10 3.5 500 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCB=15V ICBO VCB=15V, TA=65°C BVCES IC=10µA 20 BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE Cob hfe IC=10µA IC=10mA IE=10µA IC=10mA, IB=1.0mA IC=10mA, IB=3.3mA IC=10mA, IB=1.0mA IC=10mA, IB=3.3mA VCE=1.0V, IC=10mA VCE=0.4V, IC=30mA VCB=5.0V, IE=0, f=1.0MHz VCE=10V, IC=10mA, f=100MHz 0.70 0.72 20 15 20 10 3.5 MAX 0.4 10 UNITS µA µA V V V V 0.25 0.20 0.9 1.1 150 4.0 2.5 V V V V pF R0 (6-April 2011) PN5134 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ton VCC=3.0V, IC=10mA, IB1=3.3mA 18 td VCC=3.0V, IC=10mA, IB1=3.3mA 14 tr toff ts tf VCC=3.0V, IC=10mA, VCC=3.0V, IC=10mA, VCC=3.0V, IC=10mA, IB1=3.3mA IB1=IB2=3.3mA 12 18 13 13 UNITS ns ns ns ns ns ns IB1=IB2=3.3mA VCC=3.0V, IC=10mA, IB1=IB2=3.3mA TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (6-April 2011) w w w. c e n t r a l s e m i . c o m