CDBQR0130L-HF

SMD Schottky Barrier Diode SMD Diodes Specialist C DBQR0130L-HF I o = 100 mA V R = 3 0 Volts (RoHS Device) Features H alogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0402(1005) 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Mechanical data C ase: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BP Mounting position: Any. Weight: 0.001 gram(approx.). 0.020(0.50) Typ. 0.012(0.30) Typ. 0.022(0.55) 0.018(0.45) Dimensions in inches and (millimeter) Maximum Rating ( at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 100 1 125 -40 +125 +125 V V mA A mW O 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics ( at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current I F = 1 0 mA VR = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.35 10 V uA REV:C QW-G1098 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBQR0130L-HF) F ig. 1 - Forward characteristics 1 000 1m F ig. 2 - Reverse characteristics 1 00 R everse current ( A ) Forward current (mA ) 100u 75 C O 10u 25 C O 10 C 1u 5 12 O C C O 25 1 75 O -25 O C 100n -25 C O 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 100 Fig.4 - Current derating curve Average forward current(%) f = 1 MHz Ta = 25 C 100 80 10 60 40 20 1 0 5 10 15 20 25 30 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map 450 Ta=25 C IF=200mA n=30pcs O Fig. 6 - IR Dispersion map 50 45 Ta=25 C VR=10V n=30pcs O Fig. 7 - CT Dispersion map 30 29 Ta=25 C F=1MHz VR=0V n=10pcs O 35 30 25 20 15 10 5 AVG:4.1816uA Capacitance between terminals(pF) Forward voltage (mV) Reverse current (uA) 440 40 28 27 26 25 24 23 22 21 20 AVG:22.8pF 430 420 410 AVG:421.28mV 400 0 REV:C QW-G1098 Page 2 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 0.75 ± 0.10 0.026 ± 0.004 B 1.15 ± 0.10 0.045 ± 0.004 C 0.60 ± 0.10 0.024 ± 0.004 d 1.55 ± 0.10 0.061 ± 0.004 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0.20 0.512 ± 0.008 QR/0402 (mm) (inch) SYMBOL E 1.75 ± 0.10 0.069 ± 0.004 F 3.50 ± 0.05 0.138 ± 0.002 P 4.00 ± 0.10 0.157 ± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.10 0.079 ± 0.004 T 0.22 ± 0.05 0.009 ± 0.002 W 8.00 ± 0.20 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. QR/0402 (mm) (inch) REV:C QW-G1098 Page 3 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Marking Code Part Number CDBQR0130L-HF Marking Code BP BP Suggested PAD Layout QR/0402 SIZE (mm) A B C D E 0.750 0.500 0.700 1.250 0.250 (inch) 0.030 0.020 C D A E 0.028 0.049 0.010 B Standard Package Qty per Reel Case Type (Pcs) QR/0402 5000 Reel Size (inch) 7 REV:C QW-G1098 Page 4 Comchip Technology CO., LTD.