CY62146GE30-45ZSXI

TA RSYN U E TC OU O IUTC CR EEN ECC SOLUTIONS SRCH A M TW H HOSN - CHIP COMPLETE FREEDOM FROM SOFT ERRORS ASYNCHRONOUS SRAMS WITH ERROR-CORRECTING CODE (ECC) SOFT ERROR: HOW BAD IS IT? With every new process technology node there is significant improvement in performance and power consumption along with reduction in the size of the chip. Each new process technology reduces voltage and shrinks the capacitance of the node. This reduced node capacitance make these devices more susceptible to bit failures caused by energetic particles. These bit failures are called soft errors. Electronic devices are frequently exposed to extraterrestrial energetic particles like Alpha particles, Cosmic rays & Thermal neutrons. With today’s advanced process nodes, memories are highly likely to fail due to soft errors caused by this extraterrestrial radiation. Soft errors not only corrupt data, but can also lead to loss of function and system critical failures. Industrial controllers, military equipment, networking systems, medical devices, automotive electronics, and consumer electronics are especially vulnerable to the adverse effects of soft errors. An uncorrected soft error can lead to system failures in mission critical industrial automation, automotive engine control, and high-end security systems. 2 async.cypress.com A SYN C SR A M W I T H O N - CHIP ECC WHAT’S THE SOLUTION? Soft errors are usually dealt with through redundancy & software. Redundancy involves storing the same data on multiple chips to insure against data loss. It’s quite expensive and takes up a lot of board space. While software doesn’t take up extra board space, it is tedious, expensive and time consuming. Both these solutions are impractical in latest generation devices due to board space and product cycle time restrictions. 3 COMPLETE FREEDOM FROM SOFT ERRORS Cypress’ Asynchronous SRAM with On-Chip Error Correcting Code (ECC) provides a faster, simpler and more cost effective solution than software or redundancy based ECC schemes. It is the industry’s highest reliability chip, built to service a wide variety of applications. ERROR CORRECTING CODE (ECC) BIT-INTERLEAVING Cypress’s latest generation Asynchronous SRAM Higher energy extraterrestrial radiation can flip devices use (38,32) Hamming Code for single-bit multiple adjacent bits, leading to multi-bit errors. error detection and correction using ECC. The The single-bit error detection and correction hardware ECC block in Cypress’ ultra-reliable capability of Error Correcting Code is Asynchronous SRAMs performs all ECC related supplemented by a bit-interleaving scheme to functions in line, without user intervention. prevent the occurrence of multi-bit errors. Together, these features provide significant improvement in Soft Error Rate (SER) performance, resulting in industry leading FIT rates less than 0.1 FIT/Mbit. Embedded ECC to detect and correct all single-bit errors 4 async.cypress.com Bit-interleaving to avoid multi-bit upsets Optional ERR pin to indicate the occurrence of single-bit error Industry leading access time: 10 ns (FAST) A SYN C SR A M W I T H O N - CHIP ECC Address Bus (19 - 21) Address Decoder Data Bus (x8/x16/ x32) Memory Array 512K x 19 bit (16 data bits and 3 parity bits) ECC Encoder Input Buffer Sense AMPS ECC ECC Encoder ERR I/O MUX Control Circuit CE, OE, WE, BHE, BLE ASYNCHRONOUS SRAM WITH ON-CHIP ECC FAMILY PARAMETERS 4- M bit Fast SRAM 4-M bit Low Power SRAM 4- M bit Fast SRAM with P ower S nooze™ 16 - M bit Fast SRAM 16 - M bit L ow P ower SRAM 16 - M bit Fast SRAM with P ower S nooze™ ACCESS TIME 10 ns 45 ns 10 ns 10 ns 45 ns 10 ns OPERATING CURRENT (MAX.) 45 mA 20 mA 45 mA 110 mA 36 mA 110 mA STANDBY CURRENT (MAX.) 8.7 µA 15 µA 30 mA 16 µA 22 µA Ultra-low standby current: 8.7 µA (4-Mbit MoBL) 8 mA Multiple configurations (x8, x16, and x32) and operating voltages (1.8V, 3V, 5V) Available in industrial and automotive temperature grades Form-fit-function compatible with current generation ASYNC SRAM devices 5 HIGH PERFORMANCE AND LOW POWER. NOW A REALITY Fast SRAM with PowerSnooze™ is a revolutionary product that eliminates the tradeoff between performance and power consumption in Asynchronous SRAM applications. In this new family of devices, the best features of Fast SRAMs (High speed) & Low-Power SRAMs (Low power consumption) are available through a novel on-chip power saving mode called PowerSnooze™. PERFORMANCE AND POWER TRADEOFF IN ASYNCHRONOUS SRAMS PARAMETERS 16 - M bit Fast SRAM 16 - M bit L ow P ower SRAM 16 - M bit Fast SRAM ACCESS TIME 10 ns 45 ns 10 ns ACTIVE CURRENT 110 mA 36 mA 110 mA STANDBY CURRENT 30 mA 16 µA 22 µA with P ower S nooze™ PowerSnooze is an additional power saving mode to standard Asynchronous SRAM operating modes (Active, Standby, and Data-Retention). The Deep Sleep pin (DS#) enables switching between the high performance active mode and the ultra low-power PowerSnooze mode. With deep sleep current as low as 15 μA (in 4-Mbit devices), Fast SRAM with PowerSnooze combines the best features of fast and low-power SRAM in a single device. A0 - A19 Address Decoder I/O0 - I/O7 I/O8 - I/O15 Memory Array ECC Encoder Input Buffer Sense AMPS ECC Encoder Power Management Block (Enables PowerSnoozeTM) DS# 6 async.cypress.com I/O MUX Control Circuit CE# OE# WE# BHE# BHE# A SYN C SR A M W I T H O N - CHIP ECC ORDERING CODE PACKAGE DIMENSIONS FAST ASYNCHRONOUS SRAM WITH ECC as nominal measurements and Package dimensions are shown PART NUMBER O rganiz ation Voltage S peed Temper ature G r ad e are intended for quick reference CY7C1049G(E) 512 K X 8 1.8 V, 3 V, 5 V 10 ns, 15 ns Industrial only. Please refer to detailed CY7C1041G(E) 256 K x 16 1.8 V, 3 V, 5 V 10 ns, 12 ns, 15 ns, 17 ns Industrial, Automotive product datasheets for precise CY7C1069G(E) 2Mx8 1.8 V, 3 V, 5 V 10 ns, 15 ns Industrial package dimensions and CY7C1061G(E) 1 M X 16 1.8 V, 3 V, 5 V 10 ns, 12 ns, 15 ns, 17 ns Industrial, Automotive CY7C1062G(E) 512 K X 32 1.8 V, 3 V 10 ns, 15 ns Industrial complete specifications. 54-pin TSOP-II, 44-pin TSOP-II, 44-pin SOJ, 48-pin BGA, 48-pin TSOP-I, 119-pin BGA LOW-POWER ASYNCHRONOUS SRAM WITH ECC PART NUMBER O rganiz ation Voltage S peed Temper ature G r ad e CY62148G 512 K X 8 1.8 V, 3 V, 5 V 45 ns, 55 ns Industrial CY62146G(E) 256 K x 16 1.8 V, 3 V, 5 V 45 ns, 55 ns Industrial, Automotive CY62147G(E) 256 K x 16 1.8 V, 3 V, 5 V 45 ns, 55 ns Industrial, Automotive CY62168G(E) 2MX8 1.8 V, 3 V, 5 V 45 ns, 55 ns Industrial CY62167G(E) 1 M X 16 1.8 V, 3 V, 5 V 45 ns, 55 ns Industrial, Automotive CY62162G(E) 512 K X 32 1.8 V, 3 V 45 ns, 55 ns Industrial 11.8 mm 54-pin TSOP-II 22.4 mm 44-pin TSOP-II 12.0 mm 18.4 mm 12.0 mm 48-pin TSOP 44-pin TSOP-II, 48-pin TSOP-I, 48-pin BGA, 119-pin BGA 18.4 mm FAST SRAM WITH POWERSNOOZE™ PART NUMBER O rganiz ation Voltage S peed Temper ature G r ad e CY7S1049G(E) 512 K X 8 1.8 V, 3 V, 5 V 10 ns, 15 ns Industrial CY7S1041G(E) 256 K x 16 1.8 V, 3 V, 5 V 10 ns, 15 ns Industrial CY7S1061G(E) 1 M x 16 1.8 V, 3 V, 5 V 10 ns, 15 ns Industrial CY7S1062G 512 K X 32 1.8 V, 3 V 10 ns, 15 ns Industrial 48-pin BGA, 48-pin TSOP-I, 119-pin BGA 11.2 mm 44-pin SOJ 28.2 mm 48-pin FBGA 8.0 mm 6.0 mm 119-pin BGA 22 mm 14 mm 7 A SYN C SR A M W I T H ON - CHIP ECC CONTACT US CYPRESS HEADQUARTERS FOR MORE INFORMATION ON ASYNC: Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134 USA Tel: +1 (408) 943-2600 Fax: +1 (408) 943-6848 Toll-free: +1 (800) 858-1810 (U.S. only) www.async.cypress.com www.cypress.com ©2015 Cypress Semiconductor Corporation. All Rights Reserved. Cypress and MoBL are registered trademarks of Cypress Semiconductor Corp. PowerSnooze is a trademark of Cypress Semiconductor Corp. All other trademarks are the property of their respective owners. 001-95454 Rev**