CY7C1041BN

CY7C1041BN 256K x 16 Static RAM Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C • High speed — tAA = 15 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features • Available in Pb-free and non Pb-free 44-pin TSOP II and molded 44-pin (400-Mil) SOJ packages Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041BN is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout. Logic Block Diagram INPUT BUFFER Pin Configuration SOJ TSOP II Top View A0 A1 A2 A3 A4 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 A3 A4 A5 A6 A7 A8 256K x 16 ARRAY I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BHE WE CE OE BLE A17 A16 A15 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A14 A13 A12 A11 A10 ROW DECODER A9 A10 A 11 A 12 A 13 A14 A15 A16 A17 SENSE AMPS Cypress Semiconductor Corporation Document #: 001-06496 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 31, 2006 [+] [+] Feedback CY7C1041BN Selection Guide -15 Maximum Access Time Maximum Operating Current Commercial Industrial Automotive-A Maximum CMOS Standby Current Commercial Commercial L Industrial Automotive-A 3 0.5 6 15 190 210 -20 20 170 190 190 3 0.5 6 6 DC Input Voltage[1] ................................ –0.5V to VCC + 0.5V Current into Outputs (LOW)......................................... 20 mA mA Unit ns mA Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V Operating Range Range Commercial Industrial Automotive-A Ambient Temperature[2] 0°C to +70°C –40°C to +85°C –40°C to +85°C VCC 5V ± 0.5 Electrical Characteristics Over the Operating Range -15 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] GND < VI < VCC VCC = Max., f = fMAX = 1/tRC Comm’l Ind’l Auto-A ISB1 Automatic CE Power-Down Current—TTL Inputs Automatic CE Power-Down Current —CMOS Inputs Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC – 0.3V, Comm’l VIN > VCC – 0.3V, Comm’l L or VIN < 0.3V, f = 0 Ind’l Auto-A Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the case temperature. 3. Tested initially and after any design or process changes that may affect these parameters. -20 Max. 0.4 Min. 2.4 0.4 2.2 –0.5 –1 –1 VCC + 0.5 0.8 +1 +1 170 190 190 40 40 Max. Unit V V V V mA mA mA mA mA mA Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 2.2 –0.5 –1 –1 VCC + 0.5 0.8 +1 +1 190 210 Input Load Current VCC Operating Supply Current Output Leakage Current GND < VOUT < VCC, Output Disabled ISB2 3 0.5 6 3 0.5 6 6 mA mA mA mA Document #: 001-06496 Rev. *A Page 2 of 10 [+] [+] Feedback CY7C1041BN Capacitance[3] Parameter CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF AC Test Loads and Waveforms 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) R2 255Ω R1 481Ω R1 481Ω 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE (b) R2 255Ω GND ≤ 3 ns 3.0V 90% 10% 90% 10% ≤ 3 ns ALL INPUT PULSES Equivalent to: THÉVENIN EQUIVALENT 167Ω 1.73V OUTPUT Switching Characteristics[4] Over the Operating Range -15 Parameter Read Cycle tpower tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE VCC(typical) to the First Access[5] Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High CE LOW to Low CE HIGH to High Z[6, 7] 3 7 0 15 7 0 7 0 8 0 20 8 Z[6, 7] Z[7] 0 7 3 8 3 15 7 0 8 1 15 15 3 20 8 1 20 20 µs ns ns ns ns ns ns ns ns ns ns ns ns ns ns Description Min. Max. Min. -20 Max. Unit CE LOW to Power-Up CE HIGH to Power-Down Byte Enable to Data Valid Byte Enable to Low Z Byte Disable to High Z Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. tpower time has to be provided initially before a read/write operation is started. 6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. Document #: 001-06496 Rev. *A Page 3 of 10 [+] Feedback CY7C1041BN Switching Characteristics[4] Over the Operating Range (continued) -15 Parameter Write Cycle tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW [8, 9] -20 Max. Min. 20 13 13 0 0 13 9 0 3 7 8 13 Max. Unit ns ns ns ns ns ns ns ns ns ns ns Description Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[7] WE LOW to High Z[6, 7] Byte Enable to End of Write Min. 15 12 12 0 0 12 8 0 3 12 Data Retention Characteristics Over the Operating Range (L version only) Parameter VDR ICCDR tCDR [3] Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Conditions[11] VCC = VDR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V Min. 2.0 Max. 200 Unit V µA ns ns 0 tRC tR[10] Data Retention Waveform DATA RETENTION MODE VCC 3.0V tCDR CE VDR > 2V 3.0V tR Notes: 8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. 10. tr < 3 ns for the -15 speed. tr < 5 ns for the -20 and slower speeds. 11. No input may exceed VCC + 0.5V. Document #: 001-06496 Rev. *A Page 4 of 10 [+] [+] Feedback CY7C1041BN Switching Waveforms Read Cycle No. 1[12, 13] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[13, 14] ADDRESS tRC CE tACE OE BHE, BLE tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZCE tHZBE DATA VALID tPD 50% ISB ICC tHZOE HIGH IMPEDANCE DATA OUT Notes: 12. Device is continuously selected. OE, CE, BHE, and/or BHE = VIL. 13. WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 001-06496 Rev. *A Page 5 of 10 [+] [+] Feedback CY7C1041BN Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[15, 16] tWC ADDRESS CE tSA tSCE tAW tPWE WE tBW BHE, BLE tSD DATAI/O tHD tHA Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tPWE WE tSCE CE tSD DATAI/O tHD tHA Notes: 15. Data I/O is high impedance if OE or BHE and/or BLE= VIH. 16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 001-06496 Rev. *A Page 6 of 10 [+] [+] Feedback CY7C1041BN Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS CE tSCE tAW tSA tPWE tHA WE tBW BHE, BLE tHZWE DATA I/O tLZWE tSD tHD Truth Table CE H L L L L L L L OE X L L L X X X H WE X H H H L L L H BLE X L L H L L H X BHE X L H L L H L X I/O0–I/O7 High Z Data Out Data Out High Z Data In Data In High Z High Z I/O8–I/O15 High Z Data Out High Z Data Out Data In High Z Data In High Z Read All bits Read Lower bits only Read Upper bits only Write All bits Write Lower bits only Write Upper bits only Selected, Outputs Disabled Mode Power Down Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 001-06496 Rev. *A Page 7 of 10 [+] [+] Feedback CY7C1041BN Ordering Information Speed (ns) 15 Ordering Code CY7C1041BN-15VC CY7C1041BN-15VXC CY7C1041BN-15ZC CY7C1041BN-15ZXC CY7C1041BNL-15ZC CY7C1041BNL-15ZXC CY7C1041BN-15ZI CY7C1041BN-15ZXI CY7C1041BN-15VI CY7C1041BN-15VXI 20 CY7C1041BN-20VXC CY7C1041BNL-20VXC CY7C1041BN-20ZC CY7C1041BN-20ZXC CY7C1041BN-20ZI CY7C1041BN-20ZXI CY7C1041BN-20VXI CY7C1041BN-20ZSXA 51-85082 51-85087 51-85087 51-85082 51-85087 Package Name 51-85082 Package Type 44-pin (400-Mil) Molded SOJ 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin (400-Mil) Molded SOJ 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin TSOP Type II 44-pin TSOP Type II (Pb-free) 44-pin (400-Mil) Molded SOJ (Pb-free) 44-pin TSOP Type II Automotive-A Industrial Commercial Industrial Operating Range Commercial Please contact local sales representative regarding availability of these parts. Package Diagrams 44-pin (400-Mil) Molded SOJ (51-85082) 51-85082-*B Document #: 001-06496 Rev. *A Page 8 of 10 [+] [+] Feedback CY7C1041BN Package Diagrams (continued) 44-Pin TSOP II (51-85087) 51-85087-*A All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 001-06496 Rev. *A Page 9 of 10 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback CY7C1041BN Document History Page Document Title: CY7C1041BN 256K x 16 Static RAM Document Number: 001-06496 REV. ** *A ECN NO. 424111 498575 Issue Date See ECN See ECN Orig. of Change NXR NXR Description of Change New Data Sheets Added Automotive-A operating range updated Ordering Information Table Document #: 001-06496 Rev. *A Page 10 of 10 [+] [+] Feedback