STK14D88-RF45ITR

STK14D88 32Kx8 AutoStore nvSRAM Features Description ■ 25, 35, 45 ns Read Access and R/W Cycle Time ■ Unlimited Read/Write Endurance The Cypress STK14D88 is a 256Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. ■ Automatic Nonvolatile STORE on Power Loss ■ Nonvolatile STORE Under Hardware or Software Control ■ Automatic RECALL to SRAM on Power Up ■ Unlimited RECALL Cycles ■ 200K STORE Cycles ■ 20-Year Nonvolatile Data Retention ■ Single 3.0V +20%, -10% Power Supply ■ Commercial, Industrial Temperatures ■ Small Footprint SOIC and SSOP Packages (RoHS-Compliant) ig ns The SRAM provides fast access and cycle times, ease of use, and unlimited read and write endurance of a normal SRAM. es Data transfers automatically to the nonvolatile storage cells when power loss is detected (the STORE operation). On power up, data is automatically restored to the SRAM (the RECALL operation). Both STORE and RECALL operations are also available under software control. rN ew D The Cypress nvSRAM is the first monolithic nonvolatile memory to offer unlimited writes and reads. It is the highest performance, most reliable nonvolatile memory available. fo Logic Block Diagram d VCCX POWER CONTROL en STORE RECALL STORE/ RECALL CONTROL om m STATIC RAM ARRAY 512 x 512 SOFTWARE DETECT ec R INPUT BUFFERS ot N DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 ROW DECODER A5 A6 A7 A8 A9 A11 A12 A13 A14 de Quantum Trap 512 x 512 VCAP COLUMN I/O HSB A0 - A13 COLUMN DEC A0 A1 A2 A3 A4 A10 G E W Cypress Semiconductor Corporation Document Number: 001-52037 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised December 01, 2009 [+] Feedback STK14D88 Contents Features................................................................................ 1 Description........................................................................... 1 Logic Block Diagram........................................................... 1 Contents ............................................................................... 2 Pin Configurations .............................................................. 3 Pin Descriptions .................................................................. 3 Absolute Maximum Ratings ............................................... 4 DC Characteristics .............................................................. 4 AC Test Conditions ............................................................. 5 Capacitance ......................................................................... 5 SRAM READ Cycles #1 and #2 ..................................... 6 SRAM WRITE Cycle #1 and #2 ..................................... 7 AutoStore/POWER UP RECALL ......................................... 8 Software-Controlled STORE/RECALL Cycle..................... 9 Hardware STORE Cycle ..................................................... 10 Soft Sequence Commands ............................................... 10 Mode Selection ................................................................... 11 N ot R ec om m en de d fo rN ew D es ig ns nvSRAM Operation............................................................ 12 nvSRAM ....................................................................... 12 SRAM READ ................................................................ 12 SRAM WRITE .............................................................. 12 AutoStore Operation...................................................... 12 Hardware STORE (HSB) Operation............................. 12 Software STORE.......................................................... 12 Software RECALL ........................................................ 13 Data Protection............................................................. 13 Best Practices .............................................................. 13 Low Average Active Power .......................................... 13 Noise Considerations ................................................... 14 Preventing AutoStore ................................................... 14 Part Numbering Nomenclature......................................... 16 Package Diagrams............................................................. 17 Document History Page ..................................................... 19 Sales, Solutions, and Legal Information ......................... 19 Worldwide Sales and Design Support.......................... 19 Products ....................................................................... 19 Document Number: 001-52037 Rev. *A Page 2 of 18 [+] Feedback STK14D88 Pin Configurations Figure 1. Pin Diagram 48-Pin SSOP/32-SOIC 32-SOIC 48-Pin SSOP 48 2 47 VCC NC 3 46 HSB A12 A7 4 5 45 44 A6 A5 6 43 7 42 W A13 A8 A9 NC A4 8 41 NC 9 40 A11 NC 10 39 NC NC NC VSS 11 38 NC 37 13 36 NC NC DQ0 14 35 NC VSS NC 15 34 16 33 A3 A2 17 32 18 31 G A10 A1 19 30 E A0 DQ1 DQ2 20 29 21 28 22 23 27 24 25 DQ7 DQ5 DQ4 DQ3 VCC I/O E Input W Input VCC HSB 30 4 A6 A5 5 29 28 6 27 W A13 A8 A9 A4 A3 7 26 A11 25 NC A2 9 24 G NC 8 TOP 23 A10 11 22 12 21 E DQ7 DQ0 DQ1 13 20 DQ6 14 19 DQ5 DQ2 VSS 15 18 16 17 DQ4 DQ3 10 D ew rN fo d Description Address: The 15 address inputs select one of 32,768 bytes in the nvSRAM array ot Input N G 3 Relative PCB Area Usage[1] om Input A12 A7 Data: Bi-directional 8-bit data bus for accessing the nvSRAM Chip Enable: The active low E input selects the device Write Enable: The active low W enables data on the DQ pins to be written to the address location latched by the falling edge of E R A14-A0 DQ7-DQ0 HSB ec I/O NC DQ6 m Pin Descriptions Pin Name VCC 31 SSOP 26 32 2 A1 A0 de TOP 1 A14 en NC NC 12 VCAP ig ns 1 NC A14 es VCAP Output Enable: The active low G input enables the data output buffers during read cycles. De-asserting G high caused the DQ pins to tri-state. Power Supply Power: 3.0V, +20%, -10% I/O Hardware Store Busy: When low this output indicates a Store is in progress. When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak pull up resistor keeps this pin high if not connected. (Connection Optional). VCAP Power Supply AutoStore Capacitor: Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile storage elements. VSS Power Supply Ground NC No Connect Unlabeled pins have no internal connections. Note 1. See “Package Diagrams” on page 16 for detailed package size specifications. Document Number: 001-52037 Rev. *A Page 3 of 18 [+] Feedback STK14D88 Absolute Maximum Ratings Voltage on Input Relative to Ground.................–0.5V to 4.1V Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Voltage on Input Relative to VSS ...........–0.6V to (VCC + 0.5V) Voltage on DQ0-7 or HSB ......................–0.5V to (VCC + 0.5V) Temperature under Bias ............................... –55°C to 125°C Storage Temperature .................................... –65°C to 140°C Power Dissipation............................................................. 1W ig ns DC Output Current (1 output at a time, 1s duration).... 15 mA NF (SOP-32) PACKAGE THERMAL CHARACTERISTICS es θjc 5.4 C/W; θja 44.3 [0 fpm], 37.9 [200 fpm], 35.1 C/W [500 fpm]. RF (SSOP-48) PACKAGE THERMAL CHARACTERISTICS D θjc 6.2 C/W; θja 51.1 [0 fpm], 44.7 [200 fpm], 41.8 C/W [500 fpm]. ew DC Characteristics (VCC = 2.7V-3.6V) Commercial Parameter[2] Min Industrial rN Symbol Max Min Max Unit Notes mA mA mA tAVAV = 25 ns tAVAV = 35 ns tAVAV = 45 ns Dependent on output loading and cycle rate. Values obtained without output loads. 3 mA All Inputs Don’t Care, VCC = max Average current for duration of STORE cycle (tSTORE) 10 10 mA W ≥ (V CC – 0.2V) All Others Cycling, CMOS Levels Dependent on output loading and cycle rate. Values obtained without output loads. 3 3 mA All Inputs Don’t Care Average current for duration of STORE cycle (tSTORE) VCC Standby Current (Standby, Stable CMOS Input Levels) 3 3 mA E ≥ (V CC – 0.2V) All Others VIN ≤ 0.2V or ≥ (VCC – 0.2V) Standby current level after nonvolatile cycle complete IILK Input Leakage Current ±1 ±1 μA VCC = max VIN = VSS to VCC IOLK Off State Output Leakage Current ±1 ±1 μA VCC = max VIN = VSS to VCC, E or G ≥ VIH VIH Input Logic “1” Voltage 2.0 VCC + .5 2.0 VCC + .5 V All Inputs VSS – .5 0.8 VSS – .5 0.8 65 55 50 ICC2 Average VCC Current during STORE ICC3 Average VCC Current at tAVAV = 200ns 3V, 25°C, Typical ICC4 Average VCAP Current during AutoStore Cycle ISB de d Average VCC Current fo 70 60 55 ICC1 N ot R ec om m en 3 VIL Input Logic “0” Voltage VOH Output Logic “1” Voltage VOL Output Logic “0” Voltage 2.4 2.4 0.4 0.4 V All Inputs V IOUT = – 2 mA V IOUT = 4 mA Note: 2. The HSB pin has IOUT=-10uA for VOH of 2.4V, this parameter is characterized but not tested Document Number: 001-52037 Rev. *A Page 4 of 18 [+] Feedback STK14D88 DC Characteristics (continued) (VCC = 2.7V-3.6V) Commercial Parameter[2] Symbol TA Operating Temperature Industrial Min Max Min Max 0 70 - 40 85 Unit Notes °C VCC Operating Voltage 2.7 3.6 2.7 3.6 V 3.3V +20%, -10% VCAP Storage Capacitance 17 120 17 120 μF Between VCAP pin and VSS, 5V Rated DATAR Data Retention 20 20 NVC Nonvolatile STORE Operations 200 200 K ig ns Years At 55°C es AC Test Conditions ew D Input Pulse Levels .................................................... 0V to 3V Input Rise and Fall Times ............................................