| IPT2006-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q06-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q06-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1206-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1206-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1206-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1206-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q08-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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