| RN1208 | TOSHIBA[ToshibaSemiconductor] | RN1208 - Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| RN1115 | TOSHIBA[ToshibaSemiconductor] | RN1115 - Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| RN1114 | TOSHIBA[ToshibaSemiconductor] | RN1114 - Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| RN1105 | TOSHIBA[ToshibaSemiconductor] | RN1105 - Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| RN1102 | TOSHIBA[ToshibaSemiconductor] | RN1102 - Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| RN1003 | TOSHIBA[ToshibaSemiconductor] | RN1003 - Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications - Toshiba Semiconductor | | | 获取价格 |
| TC7WPN3125FK,LF(CT | TOSHIBA CORPORATION | 元件 位每元件 Output 8-SSOP | | | 获取价格 |
| 2SK2615(TE12L.F) | TOSHIBA CORPORATION | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):2A;功率(Pd):1.5W;导通电阻(RDS(on)@Vgs,Id):230mΩ@10V,1A;阈值电压(Vgs(th)@Id):2V@1mA;栅极电荷(Qg@Vgs):6nC@10V;输入电容(Ciss@Vds):150pF@10V;反向传输电容(Crss@Vds):25pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| SSM3K333R,LF(T | TOSHIBA CORPORATION | Mosfet, N-Ch, 30V, 6A, Sot-23F Rohs Compliant: Yes | | | 获取价格 |
| TK22A65X,S5X | TOSHIBA CORPORATION | 通孔 N 通道 650 V 22A（Ta） 45W（Tc） TO-220SIS | | | 获取价格 |
| TK12E60W,S1VX(S | TOSHIBA CORPORATION | Mosfet, N-Ch, 600V, 11.5A, To-220 Rohs Compliant: Yes | | | 获取价格 |
| TK40E10N1,S1X(S | TOSHIBA CORPORATION | | | | 获取价格 |
| TK100E10N1,S1X(S | TOSHIBA CORPORATION | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):100A;功率(Pd):255W;导通电阻(RDS(on)@Vgs,Id):3.4mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@1mA; | | | 获取价格 |
| TK11A65D(STA4,X,M) | TOSHIBA CORPORATION | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):11A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):700mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4V@1mA; | | | 获取价格 |
| RN1106MFV,L3F | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) NPN - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
| RN2108MFV,L3F | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) PNP - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
| RN1108MFV,L3F | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) NPN - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
| RN1112MFV,L3F | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) NPN - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
| RN1103MFV,L3F(CT | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) NPN - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
| RN2132MFV,L3F | TOSHIBA CORPORATION | 晶体管 - 双极 (BJT) - 单，预偏置) PNP - 预偏压 50 V 100 mA 150 mW 表面贴装型 VESM | | | 获取价格 |
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