| STD25N10F7-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| SUD06N10-225L-E3-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;导通电阻(RDS(on)@Vgs,Id):114mΩ@10V,15A; | | | 获取价格 |
| 7N20-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):10A;导通电阻(RDS(on)@Vgs,Id):245mΩ@10V,10A; | | | 获取价格 |
| AUIRFR9024NTRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:60V 电流:30A TO252 | | | 获取价格 |
| IRF3205STRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):100A;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,100A; | | | 获取价格 |
| VBL1101M | VBsemi Electronics Co. Ltd | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| VBL1203M | VBsemi Electronics Co. Ltd | 类型:-;漏源电压(Vdss):200V;连续漏极电流(Id):10A;功率(Pd):74W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,5.4A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBL1310 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| NTB25P06T4G-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):48mΩ@10V,35A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| RU20P4C-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):2.5W;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,4.4A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):11.4nC@4.5V;输入电容(Ciss@Vds):1.295nF@15V;反向传输电容(Crss@Vds):130pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AO3402-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23 | | | 获取价格 |
| AP2310GN-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=3.1A RDS(ON)=86mΩ@4.5V SOT23 | | | 获取价格 |
| BSN20-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| AO3419-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| SI2302DS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| VB1240B | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):7A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,7A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IM2132-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| APM2701ACC-TRG-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel, P-Channel VDS=20V VGS=±20V ID=5.5A,3.4A RDS(ON)=30mΩ,79mΩ@4.5V SOT23-6 | | | 获取价格 |
| IRF5805TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTGD3148NT1G-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
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