| WPM2341A-3/TR-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| MDS1521URH-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=15A RDS(ON)=5mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
| IRLML6402TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| IRLML6401TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| IRLML2502TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| FDN537N-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23 | | | 获取价格 |
| AO7400-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=4A RDS(ON)=40mΩ@4.5V SOT323 | | | 获取价格 |
| AO4421-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=60V VGS=±20V ID=8A RDS(ON)=60mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
| AO4406A-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=9A RDS(ON)=11mΩ@4.5V SOP-8 | | | 获取价格 |
| AO3423-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| AO3415A-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| 2SJ179-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=6A RDS(ON)=56mΩ@4.5V SOT89 | | | 获取价格 |
| 2N7002BK-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT-23 | | | 获取价格 |
| FU120N | VBsemi Electronics Co. Ltd | MOSFETs 1个N沟道 耐压:100V 电流:12A TO-251 | | | 获取价格 |
| CEG8205-VB | VBsemi Electronics Co. Ltd | 类型:N+N沟道;漏源电压(Vdss):25V;连续漏极电流(Id):6.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FDD5670-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO5404E-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):700mA;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):270mΩ@4.5V,1A;阈值电压(Vgs(th)@Id):1V@250uA; | | | 获取价格 |
| CMD12N10-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| 2V7002KT1G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):250mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,0.25A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| ZXMN6A07ZTA-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
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