| VBL1105 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):110A;功率(Pd):375W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBL1405 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):100A;功率(Pd):150W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,100A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| STB30NF10T4-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):45A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,45A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| PHB32N06-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| SI2309CDS-T1-GE3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):5.2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):50mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| XP152A12C0MR-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| AP2309GN-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A; | | | 获取价格 |
| MMBF170LT1G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):250mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,200mA;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):400pC@4.5V;输入电容(Ciss@Vds):25pF@25V;反向传输电容(Crss@Vds):2pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AP2309AGN-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| CES2314-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| RSQ045N03TR-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NDT454P-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):35V;连续漏极电流(Id):6.2A;功率(Pd):4.2W;导通电阻(RDS(on)@Vgs,Id):40mΩ@10V,5A; | | | 获取价格 |
| IRLU024NPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):59.5W;导通电阻(RDS(on)@Vgs,Id):32mΩ@10V,12A;阈值电压(Vgs(th)@Id):3.5V@250uA;栅极电荷(Qg@Vgs):28nC@4.5V;输入电容(Ciss@Vds):1.1nF@30V;反向传输电容(Crss@Vds):130pF@30V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| VBFB1208N | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):25A;功率(Pd):145W;导通电阻(RDS(on)@Vgs,Id):56mΩ@10V,25A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBFB1104N | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@10V,35A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBFB16R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):125W;导通电阻(RDS(on)@Vgs,Id):2.2Ω@10V,3.7A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBFB2317 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):40A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):18mΩ@10V,40A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| STP30NF20-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):40A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):60mΩ@10V,40A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FR1205-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,35A; | | | 获取价格 |
| 15N10 TO252-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):114mΩ@10V,15A; | | | 获取价格 |
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